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Indications of superconductivities in blend of variant apatite and covellite
Authors:
Hongyang Wang,
Yi**g Zhao,
Hao Wu,
Ling Wang,
Zhixing Wu,
Zhihui Geng,
Jiewen Xiao,
Weiwei Xue,
Shufeng Ye,
Ning Chen,
Xianfeng Qiao,
Yao Yao
Abstract:
Through heavily do** sulfur into an apatite framework, we synthesize a new blend mainly comprising variant apatite and covellite (copper sulfide). Magnetic measurement exhibits that significant diamagnetism appears at around 260 K and drops dramatically below 30 K implying coexistence of two superconducting phases. The upper critical magnetic field is larger than 1000 Oe at 250 K. Electric measu…
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Through heavily do** sulfur into an apatite framework, we synthesize a new blend mainly comprising variant apatite and covellite (copper sulfide). Magnetic measurement exhibits that significant diamagnetism appears at around 260 K and drops dramatically below 30 K implying coexistence of two superconducting phases. The upper critical magnetic field is larger than 1000 Oe at 250 K. Electric measurement manifests that the current-voltage curves deviate from the normal linear lineshape suggesting the presence of zero-resistance effect, and the critical current is around 50 $μ$A at 140 K. These exotic magnetic and electric features strongly indicate these two components, variant apatite and covellite, individually trigger two superconducting phases at near-room and low temperatures.
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Submitted 25 June, 2024;
originally announced June 2024.
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Observation of diamagnetic strange-metal phase in sulfur-copper codoped lead apatite
Authors:
Hongyang Wang,
Hao Wu,
Ning Chen,
Xianfeng Qiao,
Ling Wang,
Zhixing Wu,
Zhihui Geng,
Weiwei Xue,
Shufeng Ye,
Yao Yao
Abstract:
By codo** sulfur and copper into lead apatite, the crystal grains are directionally stacked and the room-temperature resistivity is reduced from insulating to $2\times10^{-5}~Ω\cdot$m. The resistance-temperature curve exhibits a nearly linear relationship at low temperature suggesting the presence of strange-metal phase, and a second-order phase transition is then observed at around 230~K during…
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By codo** sulfur and copper into lead apatite, the crystal grains are directionally stacked and the room-temperature resistivity is reduced from insulating to $2\times10^{-5}~Ω\cdot$m. The resistance-temperature curve exhibits a nearly linear relationship at low temperature suggesting the presence of strange-metal phase, and a second-order phase transition is then observed at around 230~K during cooling the samples. A possible Meissner effect is present in dc magnetic measurements. Further hydrothermal lead-free synthesis results in smaller resistance and stronger diamagnetism, demonstrating the essential component might be sulfur-substituted copper apatite and the alkalis matter as well. A clear pathway towards superconductivity in this material is subsequently benchmarked.
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Submitted 6 May, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.
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Strange memory effect of low-field microwave absorption in copper-substituted lead apatite
Authors:
Jicheng Liu,
Chenao He,
Weijie Huang,
Zhihao Zhen,
Guanhua Chen,
Tianyong Luo,
Xianfeng Qiao,
Yao Yao,
Dongge Ma
Abstract:
We observe a considerable hysteresis effect of low-field microwave absorption (LFMA) in copper-substituted lead apatite. By continuously rotating samples under external magnetic field, this effect is diminished which can not be renewed by a strong magnetic field but will be spontaneously recovered after two days, indicating its glassy features and excluding possibility of any ferromagnetism. The i…
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We observe a considerable hysteresis effect of low-field microwave absorption (LFMA) in copper-substituted lead apatite. By continuously rotating samples under external magnetic field, this effect is diminished which can not be renewed by a strong magnetic field but will be spontaneously recovered after two days, indicating its glassy features and excluding possibility of any ferromagnetism. The intensity of LFMA is found to sharply decrease at around 250K, suggesting a phase transition takes place. A lattice gauge model is then employed to assign these effects to the transition between superconducting Meissner phase and vortex glass, and the slow dynamics wherein is calculated as well.
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Submitted 16 December, 2023;
originally announced December 2023.
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Multiple topological nodal structure in LaSb2 with large linear magnetoresistance
Authors:
Y. X. Qiao,
Z. C. Tao,
F. Y. Wang,
Huaiqiang Wang,
Z. C. Jiang,
Z. T. Liu,
Soohyun Cho,
F. Y. Zhang,
Q. K. Meng,
W. Xia,
Y. C. Yang,
Z. Huang,
J. S. Liu,
Z. H. Liu,
Z. W. Zhu,
S. Qiao,
Y. F. Guo,
Haijun Zhang,
Dawei Shen
Abstract:
Unconventional fermions in the immensely studied topological semimetals are the source for rich exotic topological properties. Here, using symmetry analysis and first-principles calculations, we propose the coexistence of multiple topological nodal structure in LaSb2, including topological nodal surfaces, nodal lines and in particular eightfold degenerate nodal points, which have been scarcely obs…
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Unconventional fermions in the immensely studied topological semimetals are the source for rich exotic topological properties. Here, using symmetry analysis and first-principles calculations, we propose the coexistence of multiple topological nodal structure in LaSb2, including topological nodal surfaces, nodal lines and in particular eightfold degenerate nodal points, which have been scarcely observed in a single material. Further, utilizing high resolution angle-resolved photoemission spectroscopy in combination with Shubnikov-de Haas quantum oscillations measurements, we confirm the existence of nodal surfaces and eightfold degenerate nodal points in LaSb2, and extract the π Berry phase proving the non-trivial electronic band structure topology therein. The intriguing multiple topological nodal structure might play a crucial role in giving rise to the large linear magnetoresistance. Our work renews the insights into the exotic topological phenomena in LaSb2 and its analogous.
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Submitted 22 August, 2022;
originally announced August 2022.
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Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate
Authors:
Xiao-Li Li,
Xiao-Fen Qiao,
Wen-Peng Han,
Xin Zhang,
Qing-Hai Tan,
Tao Chen,
**-Heng Tan
Abstract:
Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identi…
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Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer.
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Submitted 17 February, 2016;
originally announced February 2016.
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Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2
Authors:
Xiao-Fen Qiao,
Jiang-Bin Wu,
Lin-Wei Zhou,
**g-Si Qiao,
Wei Shi,
Tao Chen,
Xin Zhang,
Jun Zhang,
Wei Ji,
**-Heng Tan
Abstract:
The anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and potential application, have one more dimension to tune the properties than the isotropic 2D materials. The interlayer vdW coupling determines the properties of 2D multi-layer materials by varying stacking orders. As an important representative anisotropic 2D materials, multilayer rhenium d…
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The anisotropic two-dimensional (2D) van der Waals (vdW) layered materials, with both scientific interest and potential application, have one more dimension to tune the properties than the isotropic 2D materials. The interlayer vdW coupling determines the properties of 2D multi-layer materials by varying stacking orders. As an important representative anisotropic 2D materials, multilayer rhenium disulfide (ReS2) was expected to be random stacking and lack of interlayer coupling. Here, we demonstrate two stable stacking orders (aa and a-b) of N layer (NL, N>1) ReS2 from ultralow-frequency and high-frequency Raman spectroscopy, photoluminescence spectroscopy and first-principles density functional theory calculation. Two interlayer shear modes are observed in aa-stacked NL-ReS2 while only one interlayer shear mode appears in a-b-stacked NL-ReS2, suggesting anisotropic-like and isotropic-like stacking orders in aa- and a-b-stacked NL-ReS2, respectively. The frequency of the interlayer shear and breathing modes reveals unexpected strong interlayer coupling in aa- and a-b-NL-ReS2, the force constants of which are 55-90% to those of multilayer MoS2. The observation of strong interlayer coupling and polytypism in multi-layer ReS2 stimulate future studies on the structure, electronic and optical properties of other 2D anisotropic materials.
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Submitted 30 December, 2015;
originally announced December 2015.
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Exciton valley dynamics in monolayer WSe2 probed by the two-color ultrafast Kerr rotation
Authors:
Tengfei Yan,
Xiaofen Qiao,
**heng Tan,
Xinhui Zhang
Abstract:
The newly developed two-dimensional layered materials provide perfect platform for valley-spintronics exploration. To determine the prospect of utilizing the valley degree of freedom, it is of great importance to directly detect and understand the valley dynamics in these materials. Here, the exciton valley dynamics in monolayer WSe$_2$ is investigated by the two-color pump-probe magneto-optical K…
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The newly developed two-dimensional layered materials provide perfect platform for valley-spintronics exploration. To determine the prospect of utilizing the valley degree of freedom, it is of great importance to directly detect and understand the valley dynamics in these materials. Here, the exciton valley dynamics in monolayer WSe$_2$ is investigated by the two-color pump-probe magneto-optical Kerr technique. By tuning the probe photon energy in resonance with the free excitons and trions, the valley relaxation time of different excitonic states in monolayer WSe$_2$ is determined. Valley relaxation time of the free exciton in monolayer WSe$_2$ is confirmed to be several picoseconds. A slow valley polarization relaxation process is observed to be associated with the trions, showing that the valley lifetime for trions is one order of magnitude longer than that of free excitons. This finding suggests that trion can be a good candidate for valleytronics application.
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Submitted 8 May, 2016; v1 submitted 16 July, 2015;
originally announced July 2015.
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Substrate-free layer-number identification of two-dimensional materials: A case of Mo$_{0.5}$W$_{0.5}$S$_2$ alloy
Authors:
Xiao-Fen Qiao,
Xiao-Li Li,
Xin Zhang,
Wei Shi,
Jiang-Bin Wu,
Tao Chen,
**-Heng Tan
Abstract:
Any of two or more two-dimensional (2D) materials with similar properties can be alloyed into a new layered material, namely, 2D alloy. Individual monolayer in 2D alloys are kept together by Van der Waals interactions. The property of multilayer alloys is a function of their layer number. Here, we studied the shear (C) and layer-breathing (LB) modes of Mo$_{0.5}$W$_{0.5}$S$_2$ alloy flakes and the…
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Any of two or more two-dimensional (2D) materials with similar properties can be alloyed into a new layered material, namely, 2D alloy. Individual monolayer in 2D alloys are kept together by Van der Waals interactions. The property of multilayer alloys is a function of their layer number. Here, we studied the shear (C) and layer-breathing (LB) modes of Mo$_{0.5}$W$_{0.5}$S$_2$ alloy flakes and their link to the layer number of alloy flakes. The study reveals that the disorder effect is absent in the C and LB modes of 2D alloys, and the monatomic chain model can be used to estimate the frequencies of the C and LB modes. We demonstrated how to use the C and LB mode frequency to identify the layer number of alloy flakes deposited on different substrates. This technique is independent of the substrate, stoichiometry, monolayer thickness and complex refractive index of 2D materials, offering a robust and substrate-free approach for layer-number identification of 2D materials.
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Submitted 15 May, 2015;
originally announced May 2015.
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Interface coupling in twisted multilayer graphene by resonant Raman spectroscopy of layer breathing modes
Authors:
Jiang-Bin Wu,
Zhi-Xin Hu,
Xin Zhang,
Wen-Peng Han,
Yan Lu,
Wei Shi,
Xiao-Fen Qiao,
Mari Ijias,
Silvia Milana,
Wei Ji,
Andrea C. Ferrari,
**-Heng Tan
Abstract:
Raman spectroscopy is the prime non-destructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to their normal. This allows one to directly probe the interlayer interactions in multilayer samples. Graphene and other two-dimensional (2d) crystals can be combi…
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Raman spectroscopy is the prime non-destructive characterization tool for graphene and related layered materials. The shear (C) and layer breathing modes (LBMs) are due to relative motions of the planes, either perpendicular or parallel to their normal. This allows one to directly probe the interlayer interactions in multilayer samples. Graphene and other two-dimensional (2d) crystals can be combined to form various hybrids and heterostructures, creating materials on demand with properties determined by the interlayer interaction. This is the case even for a single material, where multilayer stacks with different relative orientation have different optical and electronic properties. In twisted multilayer graphene samples there is a significant enhancement of the C modes due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers. Here we show that this applies also to the LBMs, that can be now directly measured at room temperature. We find that twisting does not affect LBMs, quite different from the case of the C modes. This implies that the periodicity mismatch between two twisted layers mostly affects shear interactions. Our work shows that Raman spectroscopy is an ideal tool to uncover the interface coupling of 2d hybrids and heterostructures.
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Submitted 7 January, 2016; v1 submitted 1 May, 2015;
originally announced May 2015.
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Valley depolarization in monolayer WSe2
Authors:
Tengfei Yan,
Xiaofen Qiao,
**heng Tan,
Xinhui Zhang
Abstract:
We have systematically examined the circular polarization of monolayer WSe2 at different temperature, excitation energy and exciton density. The valley depolarization in WSe2 is experimentally confirmed to be governed by the intervalley electron-hole exchange interaction. More importantly, a non-monotonic dependence of valley circular polarization on the excitation power density has been observed,…
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We have systematically examined the circular polarization of monolayer WSe2 at different temperature, excitation energy and exciton density. The valley depolarization in WSe2 is experimentally confirmed to be governed by the intervalley electron-hole exchange interaction. More importantly, a non-monotonic dependence of valley circular polarization on the excitation power density has been observed, providing the experimental evidence for the non-monotonic dependence of exciton intervalley scattering rate on the excited exciton density. The physical origination of our experimental observations has been proposed, which is in analogy to the D'yakonov-Perel' mechanism that is operative in conventional GaAs quantum well systems. Our experimental results are fundamentally important for well understanding the valley psudospin relaxation in atomically thin transition metal dichalcogenides.
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Submitted 11 March, 2015; v1 submitted 25 February, 2015;
originally announced February 2015.
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Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
Authors:
Xin Zhang,
Xiao-Fen Qiao,
Wei Shi,
Jiang-Bin Wu,
De-Sheng Jiang,
**-Heng Tan
Abstract:
Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of the representative MoS$_2$, WS$_2$, WSe$_2$, and MoSe$_2$ TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphe…
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Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of the representative MoS$_2$, WS$_2$, WSe$_2$, and MoSe$_2$ TMDs make TMDs very attractive in nanoelectronics and optoelectronics. Similar to graphite and graphene, the atoms within each layer in 2D TMDs are joined together by covalent bonds, while van der Waals interactions keep the layers together. This makes the physical and chemical properties of 2D TMDs layer dependent. In this review, we discuss the basic lattice vibrations of monolayer, multilayer, and bulk TMDs, including high-frequency optical phonons, interlayer shear and layer breathing phonons, the Raman selection rule, layer-number evolution of phonons, multiple phonon replica, and phonons at the edge of the Brillouin zone. The extensive capabilities of Raman spectroscopy in investigating the properties of TMDs are discussed, such as interlayer coupling, spin--orbit splitting, and external perturbations. The interlayer vibrational modes are used in rapid and substrate-free characterization of the layer number of multilayer TMDs and in probing interface coupling in TMD heterostructures. The success of Raman spectroscopy in investigating TMD nanosheets paves the way for experiments on other 2D crystals and related van der Waals heterostructures.
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Submitted 2 February, 2015;
originally announced February 2015.
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The Interlayer Shear Modes in Twisted Multi-layer Graphenes: Interlayer coupling, Davydov Splitting and Intensity Resonance
Authors:
Jiang-Bin Wu,
Xin Zhang,
Mari Ijas,
Wen-Peng Han,
Xiao-Fen Qiao,
Xiao-Li Li,
De-Sheng Jiang,
Andrea C. Ferrari,
**-Heng Tan
Abstract:
Graphene and other two-dimensional crystals can be combined to form various hybrids and heterostructures, creating materials on demand, in which the interlayer coupling at the interface leads to modified physical properties as compared to their constituents. Here, by measuring Raman spectra of shear modes, we probe the coupling at the interface between two artificially-stacked few-layer graphenes…
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Graphene and other two-dimensional crystals can be combined to form various hybrids and heterostructures, creating materials on demand, in which the interlayer coupling at the interface leads to modified physical properties as compared to their constituents. Here, by measuring Raman spectra of shear modes, we probe the coupling at the interface between two artificially-stacked few-layer graphenes rotated with respect to each other. The strength of interlayer coupling between the two interface layers is found to be only 20% of that between Bernal-stacked layers. Nevertheless, this weak coupling manifests itself in a Davydov splitting of the shear mode frequencies in systems consisting of two equivalent graphene multilayers, and in the intensity enhancement of shear modes due to the optical resonance with several optically allowed electronic transitions between conduction and valence bands in the band structures. This study paves way for fundamental understanding into the interface coupling of two-dimensional hybrids and heterostructures.
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Submitted 26 August, 2014;
originally announced August 2014.
