Nano-Imaging of Landau-Phonon Polaritons in Dirac Heterostructures
Authors:
Lukas Wehmeier,
Suheng Xu,
Rafael A. Mayer,
Brian Vermilyea,
Makoto Tsuneto,
Michael Dapolito,
Rui Pu,
Zengyi Du,
Xinzhong Chen,
Wenjun Zheng,
Ran **g,
Zijian Zhou,
Kenji Watanabe,
Takashi Taniguchi,
Adrian Gozar,
Qiang Li,
Alexey B. Kuzmenko,
G. Lawrence Carr,
Xu Du,
Michael M. Fogler,
D. N. Basov,
Mengkun Liu
Abstract:
Polaritons are light-matter quasiparticles that govern the optical response of quantum materials and enable their nanophotonic applications. We have studied a new type of polaritons arising in magnetized graphene encapsulated in hexagonal boron nitride (hBN). These polaritons stem from hybridization of Dirac magnetoexciton modes of graphene with waveguide phonon modes of hBN crystals. We refer to…
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Polaritons are light-matter quasiparticles that govern the optical response of quantum materials and enable their nanophotonic applications. We have studied a new type of polaritons arising in magnetized graphene encapsulated in hexagonal boron nitride (hBN). These polaritons stem from hybridization of Dirac magnetoexciton modes of graphene with waveguide phonon modes of hBN crystals. We refer to these quasiparticles as the Landau-phonon polaritons (LPPs). Using infrared magneto nanoscopy, we imaged LPPs and controlled their real-space propagation by varying the magnetic field. These LLPs have large in-plane momenta and are not bound by the conventional optical selection rules, granting us access to the "forbidden" inter-Landau level transitions (ILTs). We observed avoided crossings in the LPP dispersion - a hallmark of the strong coupling regime - occurring when the magnetoexciton and hBN phonon frequencies matched. Our LPP-based nanoscopy also enabled us to resolve two fundamental many-body effects: the graphene Fermi velocity renormalization and ILT-dependent magnetoexciton binding energies. These results indicate that magnetic-field-tuned Dirac heterostructures are promising platforms for precise nanoscale control and sensing of light-matter interaction.
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Submitted 21 December, 2023;
originally announced December 2023.
Observation of Ultrafast Interfacial Exciton Formation and Recombination in Graphene/MoS2 Heterostructure
Authors:
Yuqing Zou,
Qiu-Shi Ma,
Zeyu Zhang,
Ruihua Pu,
Wenjie Zhang,
Peng Suo,
Jiaming Chen,
Di Li,
Hong Ma,
Xian Lin,
Yuxin Leng,
Weimin Liu,
Juan Du,
Guohong Ma
Abstract:
In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical vapor deposition method. Our experimental results reveal that, with photon-energy below the A-exciton of MoS2 monolayer, hot electrons transfer from graphene to…
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In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical vapor deposition method. Our experimental results reveal that, with photon-energy below the A-exciton of MoS2 monolayer, hot electrons transfer from graphene to MoS2 takes place in time scale of less than 0.5 ps, resulting in ultrafast formation of interfacial exciton in the heterostructure, subsequently, recombination relaxation of the interfacial exciton occurs in time scale of ~18 ps. A new model considering carrier heating and photogating effect in graphene is proposed to estimate the amount of carrier transfer in the heterostructure, which shows a good agreement with experimental result. Moreover, when the photon-energy is on-resonance with the A-exciton of MoS2, photogenerated holes in MoS2 are transferred to graphene layer within 0.5 ps, leading to the formation of interfacial exciton, the subsequent photoconductivity (PC) relaxation of graphene and bleaching recovery of A-exciton in MoS2 take place around ~10 ps time scale, ascribing to the interfacial exciton recombination. The faster recombination time of interfacial exciton with on-resonance excitation could come from the reduced interface barrier caused by bandgap renormalization effect. Our study provides deep insight into the understanding of interfacial charge transfer as well as the relaxation dynamics in graphene-based heterostructures, which are promising for the applications of graphene-based optoelectronic devices.
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Submitted 21 March, 2022;
originally announced March 2022.
