Showing 1–41 of 41 results for author: Pryds, N

Electron-vacancy scattering in SrNbO$_3$ and SrTiO$_3$: A DFT-NEGF study

Authors: Victor Rosendal, Nini Pryds, Dirch Hjorth Petersen, Mads Brandbyge

Abstract: Oxygen vacancies are often attributed to changes in the electronic transport for perovskite oxide materials (ABO$_3$). Here, we use density functional theory (DFT) coupled with non-equilibrium Green's functions (NEGF) to systematically investigate the influence of O vacancies and also A and B-site vacancies, on the electronic transport as characterised by a scattering cross-section. We consider Sr… ▽ More Oxygen vacancies are often attributed to changes in the electronic transport for perovskite oxide materials (ABO$_3$). Here, we use density functional theory (DFT) coupled with non-equilibrium Green's functions (NEGF) to systematically investigate the influence of O vacancies and also A and B-site vacancies, on the electronic transport as characterised by a scattering cross-section. We consider SrNbO$_3$ and n-type SrTiO$_3$ and contrast results for bulk and thin film (slab) geometries. By varying the electron do** in SrTiO$_3$ we get insight into how the electron-vacancy scattering vary for different experimental conditions. We observe a significant increase in the scattering cross-section (in units of square-lattice parameter, $a^2$) from ca. $0.5-2.5a^2$ per vacancy in SrNbO$_3$ and heavily doped SrTiO$_3$ to more than $9a^2$ in SrTiO$_3$ with 0.02 free carriers per unit cell. Furthermore, the scattering strength of O vacancies is enhanced in TiO$_2$ terminated surfaces by more than 6 times in lowly doped SrTiO$_3$ compared to other locations in slabs and bulk systems. Interestingly, we also find that Sr vacancies go from being negligible scattering centers in SrNbO$_3$ and heavily doped SrTiO$_3$, to having a large scattering cross-section in weakly doped SrTiO$_3$. We therefore conclude that the electron-vacancy scattering in these systems is sensitive to the combination of electron concentration and vacancy location. △ Less

Submitted 11 January, 2024; originally announced January 2024.

Journal ref: Phys. Rev. B 109, 205129 (2024)

2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science

Authors: D. V. Christensen, U. Staub, T. R. Devidas, B. Kalisky, K. C. Nowack, J. L. Webb, U. L. Andersen, A. Huck, D. A. Broadway, K. Wagner, P. Maletinsky, T. van der Sar, C. R. Du, A. Yacoby, D. Collomb, S. Bending, A. Oral, H. J. Hug, A. -O. Mandru, V. Neu, H. W. Schumacher, S. Sievers, H. Saito, A. A. Khajetoorians, N. Hauptmann , et al. (28 additional authors not shown)

Abstract: Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of… ▽ More Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Provoking topology by octahedral tilting in strained SrNbO$_3$

Authors: Alla Chikina, Victor Rosendal, Hang Li, Eduardo B. Guedes, Marco Caputo, Nicholas Clark Plumb, Ming Shi, Dirch Hjorth Petersen, Mads Brandbyge, Walber Hugo Brito, Ekaterina Pomjakushina, Valerio Scagnoli, Jike Lyu, Marisa Medarde, Elizabeth Skoropata, Urs Staub, Shih-Wen Huang, Felix Baumberger, Nini Pryds, Milan Radovic

Abstract: Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattic… ▽ More Transition metal oxides with a wide variety of electronic and magnetic properties offer an extraordinary possibility to be a platform for develo** future electronics based on unconventional quantum phenomena, for instance, the topology. The formation of topologically non-trivial states is related to crystalline symmetry, spin-orbit coupling, and magnetic ordering. Here, we demonstrate how lattice distortions and octahedral rotation in SrNbO$_3$ films induce the band topology. By employing angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations, we verify the presence of in-phase $a^0a^0c^+$ octahedral rotation in ultra-thin SrNbO$_3$ films, which causes the formation of topologically-protected Dirac band crossings. Our study illustrates that octahedral engineering can be effectively exploited for implanting and controlling quantum topological phases in transition metal oxides. △ Less

Submitted 10 November, 2023; originally announced November 2023.

Comments: 6 pages, 4 figures

Octahedral distortions in SrNbO$_3$: Unraveling the structure-property relation

Authors: Victor Rosendal, Walber Hugo Brito, Milan Radovic, Alla Chikina, Mads Brandbyge, Nini Pryds, Dirch Hjorth Petersen

Abstract: Strontium niobate has triggered a lot of interest as a transparent conductor and as a possible realization of a correlated Dirac semi-metal. Using the lattice parameters as a tunable knob, the energy landscape of octahedral tilting was mapped using density functional theory calculations. We find that biaxial compressive strain induces tilting around the out-of-plane axis, while tensile strain indu… ▽ More Strontium niobate has triggered a lot of interest as a transparent conductor and as a possible realization of a correlated Dirac semi-metal. Using the lattice parameters as a tunable knob, the energy landscape of octahedral tilting was mapped using density functional theory calculations. We find that biaxial compressive strain induces tilting around the out-of-plane axis, while tensile strain induces tilting around the two in-plane axes. The two competing distorted structures for compressive strain show semi-Dirac dispersions above the Fermi level in their electronic structure. Our density functional theory calculations combined with dynamical mean field theory (DFT+DMFT) reveals that dynamical correlations downshift these semi-Dirac like cones towards the Fermi energy. More generally, our study reveals that the competition between the in-phase and out-of-phase tilting in SrNbO$_3$ provides a new degree of freedom which allows for tuning the thermoelectric and optical properties. We show how the tilt angle and mode is reflected in the behavior of the Seebeck coefficient and the plasma frequency, due to changes in the band structure. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Materials 7, 075002 (2023)

Reconstruction of low dimensional electronic states by altering the chemical arrangement at the SrTiO3 surface

Authors: Hang Li, Walber H. Brito, Eduardo B. Guedes, Alla Chikina, Rasmus T. Dahm, Dennis V. Christensen, Shinhee Yun, Francesco M. Chiabrera, Nicholas C. Plumb, Ming Shi, Nini Pryds, Milan Radovic

Abstract: Develo** reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoe… ▽ More Develo** reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy (XPS) with ab initio calculations, we find that the modulation of the surface band structures is primarily attributed to the reorganization of the chemical composition. In addition, ARPES experiments demonstrate that vacuum ultraviolet (VUV) light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction (EPI). Our study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface. △ Less

Submitted 10 August, 2022; originally announced August 2022.

Current Map** of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Authors: Anders V. Bjørlig, Dennis V. Christensen, Ricci Erlandsen, Nini Pryds, Beena Kalisky

Abstract: The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic prop… ▽ More The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic properties, but the impact on the microscopic scale, particularly of the former, remains underexplored. Here, we image the current distribution at 4.2 K in amorphous-LaAlO3/SrTiO3 using scanning superconducting-quantum-interference-device microscopy while changing the carrier density in situ using electrostatic gating and oxygen annealing. We show how potential disorder affects the current and how homogeneous 2D flow evolves into several parallel conducting channels when approaching the metal-to-insulator transition. We link this to ferroelastic domains and oxygen vacancies. This has important consequences for micro- and nanoscale devices with low carrier density and fundamental studies on quantum effects in oxides. △ Less

Submitted 30 June, 2022; originally announced June 2022.

Induced Giant Piezoelectricity in Centrosymmetric Oxides

Authors: D. -S. Park, M. Hadad, L. M. Rimer, R. Ignatans, D. Spirito, V. Esposito, V. Tileli, N. Gauquelin, D. Chezganov, D. Jannis J. Verbeeck, S. Gorfman, N. Pryds, P. Muralt, D. Damjanovic

Abstract: Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustai… ▽ More Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains the major obstacle for finding new piezoelectric materials. We circumvent this limitation by breaking the crystallographic symmetry, and inducing large and sustainable piezoelectric effects in centrosymmetric materials by electric field induced rearrangement of oxygen vacancies Surprisingly, the results show the generation of extraordinarily large piezoelectric responses d33 ~200,000 pm/V), in cubic fluorite Gd-doped CeO2-x films, which is two orders of magnitude larger than in the presently best known lead based piezoelectric relaxor ferroelectric oxide. These findings open opportunities to design new piezoelectric materials from environmentally friendly centrosymmetric ones. △ Less

Submitted 10 February, 2022; v1 submitted 1 November, 2021; originally announced November 2021.

2022 Roadmap on Neuromorphic Computing and Engineering

Authors: Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Marković, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri , et al. (34 additional authors not shown)

Abstract: Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas… ▽ More Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83 △ Less

Submitted 13 January, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

Journal ref: Neuromorph. Comput. Eng. 2 022501 (2022)

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

Authors: Alla Chikina, Dennis V. Christensen, Vladislav Borisov, Marius-Adrian Husanu, Yunzhong Chen, Xiaoqiang Wang, Thorsten Schmitt, Milan Radovic, Naoto Nagaosa, Andrey S. Mishchenko, Roser Valentí, Nini Pryds, Vladimir N. Strocov

Abstract: Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the… ▽ More Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the paradigm perovskite/perovskite LaAlO3/SrTiO3. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3 which depopulates electron states in the top STO layer. This rearrangement of the mobile electron system pushes the electron density away from the interface that reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3 and perovskite SrTiO3. The band-order engineering exploiting the fundamental symmetry properties emerges as another route to boost the performance of oxide devices. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Time-reversal symmetry breaking driven topological phase transition in EuB$_6$

Authors: Shun-Ye Gao, Sheng Xu, Hang Li, Chang-Jiang Yi, Si-Min Nie, Zhi- Cheng Rao, Huan Wang, Quan-Xin Hu, Xue-Zhi Chen, Wen-Hui Fan, Jie- Rui Huang, Yao-Bo Huang, Nini Pryds, Ming Shi, Zhi-Jun Wang, You-Guo Shi, Tian-Long Xia, Tian Qian, Hong Ding

Abstract: The interplay between time-reversal symmetry (TRS) and band topology plays a crucial role in topological states of quantum matter. In time-reversal-invariant (TRI) systems, the inversion of spin-degenerate bands with opposite parity leads to nontrivial topological states, such as topological insulators and Dirac semimetals. When the TRS is broken, the exchange field induces spin splitting of the b… ▽ More The interplay between time-reversal symmetry (TRS) and band topology plays a crucial role in topological states of quantum matter. In time-reversal-invariant (TRI) systems, the inversion of spin-degenerate bands with opposite parity leads to nontrivial topological states, such as topological insulators and Dirac semimetals. When the TRS is broken, the exchange field induces spin splitting of the bands. The inversion of a pair of spin-splitting subbands can generate more exotic topological states, such as quantum anomalous Hall insulators and magnetic Weyl semimetals. So far, such topological phase transitions driven by the TRS breaking have not been visualized. In this work, using angle-resolved photoemission spectroscopy, we have demonstrated that the TRS breaking induces a band inversion of a pair of spin-splitting subbands at the TRI points of Brillouin zone in EuB$_6$, when a long-range ferromagnetic order is developed. The dramatic changes in the electronic structure result in a topological phase transition from a TRI ordinary insulator state to a TRS-broken topological semimetal (TSM) state. Remarkably, the magnetic TSM state has an ideal electronic structure, in which the band crossings are located at the Fermi level without any interference from other bands. Our findings not only reveal the topological phase transition driven by the TRS breaking, but also provide an excellent platform to explore novel physical behavior in the magnetic topological states of quantum matter. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 22 pages, 7 figures, accepted by Phys. Rev. X

Journal ref: Physical Review X 11, 021016 (2021)

Atomic-scale insights into electro-steric substitutional chemistry of cerium oxide

Authors: Haiwu Zhang, Ivano E. Castelli, Simone Santucci, Simone Sanna, Nini Pryds, Vincenzo Esposito

Abstract: Cerium oxide (ceria, CeO2) is one of the most promising mixed ionic and electronic conducting materials. Previous atomistic analysis has covered widely the effects of substitution on oxygen vacancy migration. However, an in-depth analysis of the role of cation substitution beyond trivalent cations has rarely been explored. Here, we investigate soluble monovalent, divalent, trivalent and tetravalen… ▽ More Cerium oxide (ceria, CeO2) is one of the most promising mixed ionic and electronic conducting materials. Previous atomistic analysis has covered widely the effects of substitution on oxygen vacancy migration. However, an in-depth analysis of the role of cation substitution beyond trivalent cations has rarely been explored. Here, we investigate soluble monovalent, divalent, trivalent and tetravalent cation substituents. By combining classical simulations and quantum mechanical calculations, we provide an insight into defect association energies between substituent cations and oxygen vacancies as well as their effects on the diffusion mechanisms. Our simulations indicate that oxygen ionic diffusivity of subvalent cation-substituted systems follows the order Gd>Ca>Na. With the same charge, a larger size mismatch with Ce cation yields a lower oxygen ionic diffusivity, i.e., Na>K, Ca>Ni, Gd>Al. Based on these trends, we identify species that could tune the oxygen ionic diffusivity: we estimate that the optimum oxygen vacancy concentration for achieving fast oxygen ionic transport is 2.5% for GdxCe1-xO2-x/2, CaxCe1-xO2-x and NaxCe1-xO2-3x/2 at 800 K. Remarkably, such a concentration is not constant and shifts gradually to higher values as the temperature is increased. We find that co-substitutions can enhance the impact of the single substitutions beyond that expected by their simple addition. Furthermore, we identify preferential oxygen ion migration pathways, which illustrate the electro-steric effects of substituent cations in determining the energy barrier of oxygen ion migration. Such fundamental insights into the factors that govern the oxygen diffusion coefficient and migration energy would enable design criteria to be defined for tuning the ionic properties of the material, e.g., by co-do**. △ Less

Submitted 10 February, 2021; originally announced February 2021.

Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces

Authors: Yulin Gan, Yu Zhang, Dennis V. Christensen, Nini Pryds, Yunzhong Chen

Abstract: Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn do** level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tu… ▽ More Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn do** level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tunable Rashba spin-orbit coupling (SOC) and spin polarization of LAMO/STO (0.2 <= x <= 0.3) by applying a back gate. The presence of SOC causes the splitting of energy band into two branches by a spin splitting energy. The maximum spin splitting energy depends on the Mn do** and decreases with the increasing Mn content and then vanishes at x = 0.3. The carrier density dependence of the spin splitting energy for different compositions shows a dome-shaped behavior with a maximum at different normalized carrier density. These findings have not yet been observed in LAO/STO interfaces. A fully back-gate-tunable spin-polarized 2DEL is observed at the interface with x = 0.3 where only dxy orbits are populated (5.3E12 cm-2 <= ns <= 1.0E13 cm-2). The present results shed light on unexplored territory in SOC at STO-base oxide heterostructures and make LAMO/STO an intriguing platform for spin-related phenomena in 3d-electron systems. △ Less

Submitted 29 August, 2019; originally announced August 2019.

Comments: 5 figures, to be published in PRB

On the emergence of conductivity at SrTiO3-based oxide interfaces -- an in-situ study

Authors: Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom, Thomas Sand Jespersen, Yunzhong Chen, Nini Pryds

Abstract: Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resu… ▽ More Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce -- typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based heterostructures while the crystal heterostructure is forming. Surprisingly, we detect a conducting interface already at the initial growth stage, much earlier than the well-established critical thickness limit for observing conductivity ex-situ after sample growth. We investigate how the conductivity depends on various physical processes occurring during pulsed laser depositions, including light illumination, particle bombardment by the plasma plume, interactions with the atmosphere and oxygen migration from SrTiO3 to the thin films of varying compositions. Using this approach, we propose a new design tool to control the electrical properties of interfaces in real time during their formation. △ Less

Submitted 23 August, 2019; originally announced August 2019.

Magnetic and electronic properties at the gamma-Al2O3/SrTiO3 interface

Authors: J. R. L. Mardegan, D. V. Christensen, Y. Z. Chen, S. Parchenko, S. R. V. Avula, N. Ortiz-Hernandez, M. Decker, C. Piamonteze, N. Pryds, U. Staub

Abstract: The magnetic and electronic nature of the gamma-Al2O3/SrTiO3 spinel/perovskite interface is explored by means of x-ray absorption spectroscopy. Polarized x-ray techniques combined with atomic multiplet calculations reveal localized magnetic moments assigned to Ti3+ at the interface with equivalent size for in- and out-of-plane magnetic field directions. Although magnetic fingerprints are revealed,… ▽ More The magnetic and electronic nature of the gamma-Al2O3/SrTiO3 spinel/perovskite interface is explored by means of x-ray absorption spectroscopy. Polarized x-ray techniques combined with atomic multiplet calculations reveal localized magnetic moments assigned to Ti3+ at the interface with equivalent size for in- and out-of-plane magnetic field directions. Although magnetic fingerprints are revealed, the Ti3+ magnetism can be explained by a paramagnetic response at low temperature under applied magnetic fields. Modeling the x-ray linear dichroism results in a delta0 = 1.9 eV splitting between the t2g and eg states for the Ti4+ 3d0 orbitals. In addition these results indicate that the lowest energy states have the out-of-plane dxz/dyz symmetry. The isotropic magnetic moment behavior and the lowest energy dxz/dyz states are in contrast to the observations for the two-dimensional electron gas at the perovskite/perovskite interface of LaAlO3/SrTiO3, that exhibits an anisotropic magnetic dxy ground state. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 99, 134423 (2019)

Diluted Oxide Interfaces with Tunable Ground States

Authors: Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang, Hongrui Zhang, Krishnan Dileep, Zhicheng Zhong, Wei Niu, Damon James Carrad, Kion Norrman, Merlin von Soosten, Thomas sand Jespersen, Baogen Shen, Nicolas Gauquelin, Johan Verbeeck, Jirong Sun, Nini Pryds, Yunzhong Chen

Abstract: The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by a… ▽ More The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-do** level, x, of LaAl1-xMnxO3/STO, the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc= 2.8E13 cm-2, where a peak TSC =255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >=0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, we achieve reproducibly a same device with both signatures of superconductivity and clear anomalous Hall effect. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Comments: 18 pages and 6 figures

Journal ref: Adv. Mater. 2019

Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system

Authors: Wei Niu, Wenqing Liu, Min Gu, Yongda Chen, Xiaoqian Zhang, Minhao Zhang, Yequan Chen, Ji Wang, Jun Du, Fengqi Song, Xiaoqing Pan, Nini Pryds, Xuefeng Wang, Peng Wang, Yongbing Xu, Yunzhong Chen, Rong Zhang

Abstract: Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain… ▽ More Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain play an important role in determining these unexpected properties. Herein, by studying the abrupt presence of robust ferromagnetism (up to 1.5 uB/Mn) in LaMnO3-based heterostructures, we find the multivalence states of Mn that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films. Combining spatially resolved electron energy-loss spectroscopy, X-ray absorption spectroscopy and X-ray magnetic circular dichroism techniques, we determine unambiguously that the ferromagnetism results from a conventional Mn3+-O-Mn4+ double-exchange mechanism rather than an interfacial effect. In contrast, the magnetic dead layer of 5 unit cell in proximity to the interface is found to be accompanied with the accumulation of Mn2+ induced by electronic reconstruction. These findings provide a hitherto-unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all-oxide spintronic devices. △ Less

Submitted 20 March, 2018; originally announced March 2018.

Comments: Accepted by Adv. Electron. Mater

Journal ref: Adv. Electron. Mater. 4, 1800055 (2018)

Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

Authors: Y. Z. Chen, R. J. Green, R. Sutarto, F. He, S. Linderoth, G. A. Sawatzky, N. Pryds

Abstract: Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray ref… ▽ More Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: Nano Letters, 2017

Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracing

Authors: Y. Z. Chen, M. Döbeli, E. Pomjakushina, Y. L. Gan, N. Pryds, T. Lippert

Abstract: The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isot… ▽ More The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By map** the oxygen profile across the interface between STO18 and disordered LaAlO3 or yttria-stabilized zirconia (YSZ), we provide unambiguous evidence that redox reactions occur at oxide interfaces even grown at room temperature. Moreover, the manganite buffer layer not only suppresses the carrier density but also strongly suppresses the oxygen exchange dynamics of the STO substrate, which likely prevents the reduction of STO during the formation of the 2DEG. The underlying mechanism on the enhanced electron mobility at buffered oxide interfaces is also discussed. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: to be apprear in PRMater, 2017

Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3

Authors: W. Niu, Y. Zhang, Y. L. Gan, D. V. Christensen, M. V. Soosten, E. J. Garcia-Suarez, a. Riisager, X. Wang, Y. B. Xu, R. Zhang, N. Pryds, Y. Z. Chen

Abstract: Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of γ-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system experiences a Lifshitz transition at a critical carrier density of 3E13 cm-2, where a remarkably strong enhancement of Rashba spin-orbit interaction and an emergence of K… ▽ More Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of γ-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system experiences a Lifshitz transition at a critical carrier density of 3E13 cm-2, where a remarkably strong enhancement of Rashba spin-orbit interaction and an emergence of Kondo effect at low temperatures are observed. Moreover, as the carrier concentration depletes with decreasing gating voltage, the electron mobility is enhanced by more than 6 times in magnitude, leading to the observation of clear quantum oscillations. The great tunability of GAO/STO interface by EDLT gating not only shows promise for design of oxide devices with on-demand properties, but also sheds new light on the electronic structure of 2DEG at the non-isostructural spinel/perovskite interface. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: Nano Letters 2017

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

Authors: P. Schütz, D. V. Christensen, V. Borisov, F. Pfaff, P. Scheiderer, L. Dudy, M. Zapf, J. Gabel, Y. Z. Chen, N. Pryds, V. A. Rogalev, V. N. Strocov, C. Schlueter, T. -L. Lee, H. O. Jeschke, R. Valentí, M. Sing, R. Claessen

Abstract: The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy… ▽ More The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Comments: Accepted as Rapid Communications in Physical Review B

Journal ref: Physical Review B (Rapid Communications), Vol. 96, p.161409(R), 2017

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at gamma-Al2O3/SrTiO3 heterointerfaces

Authors: W. Niu, Y. L. Gan, Y. Zhang, D. V. Christensen, M. von Soosten, X. F. Wang, Y. B. Xu, R. Zhang, N. Pryds, Y. Z. Chen

Abstract: The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1E15 cm-2. Herein, we report on the patterning of 2DEG at the gamma-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard… ▽ More The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1E15 cm-2. Herein, we report on the patterning of 2DEG at the gamma-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of gamma-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3E13 cm-2, much lower than that of the unpatterned sample (1E15 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of 7E12 cm-2, which exhibits clear Shubnikov-de Hass quantum oscillations. The patterned high-mobility 2DEG at the gamma-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices. △ Less

Submitted 28 June, 2017; originally announced June 2017.

Comments: 4 figures

Universality of Electron Mobility in LaAlO$_3$/SrTiO$_3$ and bulk SrTiO$_3$

Authors: F. Trier, K. V. Reich, D. V. Christensen, Y. Zhang, H. L. Tuller, Y. Z. Chen, B. I. Shklovskii, N. Pryds

Abstract: Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in… ▽ More Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with $N \simeq 5 \times 10^{18}~\rm{cm^{-3}}$ background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons $n_{3D} < N$ background impurities determine the electron scattering. Thus, when $n_{3D} < N$ it is natural to see in LAO/STO the same mobility as in the bulk. On the other hand, in the bulk samples with $n_{3D} > N$ the mobility collapses because scattering happens on $n_{3D}$ intentionally introduced donors. For LAO/STO the polar catastrophe which provides electrons is not supposed to provide equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO the polar catastrophe model should be revisited. △ Less

Submitted 4 September, 2017; v1 submitted 6 April, 2017; originally announced April 2017.

Comments: 4 pages and 1 figure

Journal ref: Applied Physics Letters 111, 092106 (2017)

Effect of Sr-do** of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

Authors: Y. Z. Chen, Y. L. Gan, D. V. Christensen, Y. Zhang, N. Pryds

Abstract: Modulation-doped oxide two-dimensional electron gas (2DEG) formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface, provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-do** of La1-xSrxMnO3 (LSMO, x=0, 1/8, 1/3, 1/2, and 1) thus the filling of the Mn eg subbands as well as the LSMO polarity on the trans… ▽ More Modulation-doped oxide two-dimensional electron gas (2DEG) formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface, provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-do** of La1-xSrxMnO3 (LSMO, x=0, 1/8, 1/3, 1/2, and 1) thus the filling of the Mn eg subbands as well as the LSMO polarity on the transport properties of d-LAO/LSMO/STO. Upon increasing the LSMO film thickness from 1 unit cell (uc) to 2 uc, a sharp metal to insulator transition of interface conduction was observed, independent of x. The resultant electron mobility is often higher than 1900 cm2V-1s-1 at 2 K, which increases upon decreasing x. The sheet carrier density, on the other hand, is in the range of 6.9E1012~1.8E1013 cm-2 (0.01~0.03 e/uc) and is largely independent on x for all the metallic d-LAO/LSMO (1 uc)/STO interfaces. These results are consistent with the charge transfer induced modulation do** scheme and clarify that the polarity of the buffer layer plays a trivial role on the modulation do**. The negligible tunability of the carrier density could result from the reduction of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3. △ Less

Submitted 17 February, 2017; originally announced February 2017.

Comments: 14 pages, 4 figures, to be published in JAP, March 2017

Modeling the microstructural evolution during constrained sintering

Authors: R. Bjørk, H. L. Frandsen, N. Pryds

Abstract: A numerical model able to simulate solid-state constrained sintering is presented. The model couples an existing kinetic Monte Carlo (kMC) model for free sintering with a finite element model (FEM) for calculating stresses on a microstructural level. The microstructural response to the local stress as well as the FEM calculation of the stress field from the microstructural evolution is discussed.… ▽ More A numerical model able to simulate solid-state constrained sintering is presented. The model couples an existing kinetic Monte Carlo (kMC) model for free sintering with a finite element model (FEM) for calculating stresses on a microstructural level. The microstructural response to the local stress as well as the FEM calculation of the stress field from the microstructural evolution is discussed. The sintering behavior of a sample constrained by a rigid substrate is simulated. The constrained sintering results in a larger number of pores near the substrate, as well as anisotropic sintering shrinkage, with significantly enhanced strain in the central upper part of the sample surface, and minimal strain at the edges near the substrate. All these features have also previously been observed experimentally. △ Less

Submitted 9 May, 2016; originally announced May 2016.

Comments: 9 pages, 7 figures

Journal ref: Journal of the American Ceramic Society, Vol. 98 (11), 3490-3495, 2015

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

Authors: Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Zhicheng Zhong, Merlin von Soosten, Dennis Valbjørn Christensen, Arghya Bhowmik, Juan Maria García Lastra, Yunzhong Chen, Thomas Sand Jespersen, Nini Pryds

Abstract: The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 h… ▽ More The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices. △ Less

Submitted 29 August, 2016; v1 submitted 9 March, 2016; originally announced March 2016.

Report number: NBI QDEV 2016

Journal ref: Phys. Rev. Lett. 117, 096804 (2016)

Patterning of high mobility electron gases at complex oxide interfaces

Authors: Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Merlin von Soosten, Dennis Valbjørn Christensen, Thomas Sand Jespersen, Yunzhong Chen, Nini Pryds

Abstract: Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning… ▽ More Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO$_3$/SrTiO$_3$ (a-LAO/STO) and modulation-doped amorphous- LaAlO$_3$/La$_{7/8}$Sr$_{1/8}$MnO$_3$/SrTiO$_3$ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm$^2$/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm$^2$/Vs at 2 K. △ Less

Submitted 21 January, 2016; originally announced January 2016.

Report number: NBI QDEV 2015

Journal ref: Applied Physics Letters 107, 191604 (2015)

Infrared ellipsometry study of the confined electrons in a high-mobility $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructure

Authors: Meghdad Yazdi-Rizi, Premysl Marsik, Benjamin Mallett, Adam Dubroka, Dennis Valbjørn Christensen, Yunzhong Chen, Nini Pryds, Christian Bernhard

Abstract: With infrared ellipsometry we studied the response of the confined electrons in a $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures in which they originate predominantly from oxygen vacancies. From the analysis of a so-called Berreman mode, that develops near the highest longitudinal optical phonon mode of SrTiO$_3$, we derive the sheet carrier density, ${N_{s}}$, the mobility, $μ$, and also the depth pr… ▽ More With infrared ellipsometry we studied the response of the confined electrons in a $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures in which they originate predominantly from oxygen vacancies. From the analysis of a so-called Berreman mode, that develops near the highest longitudinal optical phonon mode of SrTiO$_3$, we derive the sheet carrier density, ${N_{s}}$, the mobility, $μ$, and also the depth profile of the carrier concentration. Notably, we find that ${N_{s}}$ and the shape of the depth profile are similar as in LaAlO$_3$/SrTiO$_3$ heterostructures for which the itinerant carriers are believed to arise from a polar discontinuity. The main differences concern the higher mobility and a relatively stronger confinement of the electrons in $γ$-Al$_2$O$_3$/SrTiO$_3$ △ Less

Submitted 18 December, 2015; originally announced December 2015.

Comments: 12 pages, 2 figures

Journal ref: EPL 113 47005 (2016)

Evidence of weak superconductivity at the room-temperature grown LaAlO$_{3}$/SrTiO$_3$ interface

Authors: Guenevere E. D. K. Prawiroatmodjo, Felix Trier, Dennis V. Christensen, Yunzhong Chen, Nini Pryds, Thomas S. Jespersen

Abstract: The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study i… ▽ More The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of $460 \, \mathrm{mK}$, higher than any previously reported values for c-LAO/STO. The dependence of the superconducting critical current on temperature, magnetic field and backgate-controlled do** is found to be consistently described by a model of a random array of Josephson-coupled superconducting domains. △ Less

Submitted 26 April, 2016; v1 submitted 5 October, 2015; originally announced October 2015.

Comments: 6 pages, 5 figures

Report number: NBI QDEV 2016

Journal ref: Phys. Rev. B 93, 184504 (2016)

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation do**

Authors: Y. Z. Chen, F. Trier, T. Wijnands, R. J. Green, N. Gauquelin, R. Egoavil, D. V. Christensen, G. Koster, M. Huijben, N. Bovet, S. Macke, F. He, R. Sutarto, N. H. Andersen, G. E. D. K. Prawiroatmodjo, T. S. Jespersen, J. A. Sulpizio, M. Honig, S. Linderoth, S. Ilani, J. Verbeeck, G. Van Tendeloo, G. Rijnders, G. A. Sawatzky, N. Pryds

Abstract: The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon… ▽ More The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation do** of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics. △ Less

Submitted 22 April, 2015; originally announced April 2015.

Comments: 29 pages, 5 figures, Accepted for publication in Nature Materials

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Authors: Yunzhong Chen, Felix Trier, Takeshi Kasama, Dennis V. Christensen, Nicolas Bovet, Han Li, Zoltan I. Balogh, Karl T. S. Thydén, Wei Zhang, Sadegh Yazdi, Poul Norby, Nini Pryds, Søren Linderoth

Abstract: The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,0… ▽ More The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme. △ Less

Submitted 23 February, 2015; originally announced February 2015.

Comments: 19 pages, 4 figs; Nano Letters,2015, published online

The sintering behavior of close packed spheres

Authors: R. Bjørk, V. Tikare, H. L. Frandsen, N. Pryds

Abstract: The sintering behavior of close packed spheres is investigated using a numerical model. The investigated systems are the body centered cubic (BCC), face centered cubic (FCC) and hexagonal closed packed spheres (HCP). The sintering behavior is found to be ideal with no grain growth until full density is reached for all systems. During sintering the grains change shape from spherical to tetrakaideca… ▽ More The sintering behavior of close packed spheres is investigated using a numerical model. The investigated systems are the body centered cubic (BCC), face centered cubic (FCC) and hexagonal closed packed spheres (HCP). The sintering behavior is found to be ideal with no grain growth until full density is reached for all systems. During sintering the grains change shape from spherical to tetrakaidecahedron, similar to the geometry analyzed by Coble (R. L. Coble, J. Appl. Phys. 32 (1961) 787). △ Less

Submitted 2 October, 2014; originally announced October 2014.

Comments: 4 pages, 3 figures

Journal ref: Scripta Materialia, Vol. 67 (1), 81-84, 2012

Strain in the mesoscale kinetic Monte Carlo model for sintering

Authors: R. Bjørk, H. L. Frandsen, V. Tikare, E. Olevsky, N. Pryds

Abstract: Shrinkage strains measured from microstructural simulations using the mesoscale kinetic Monte Carlo (kMC) model for solid state sintering are discussed. This model represents the microstructure using digitized discrete sites that are either grain or pore sites. The algorithm used to simulate densification by vacancy annihilation removes an isolated pore site at a grain boundary and collapses a col… ▽ More Shrinkage strains measured from microstructural simulations using the mesoscale kinetic Monte Carlo (kMC) model for solid state sintering are discussed. This model represents the microstructure using digitized discrete sites that are either grain or pore sites. The algorithm used to simulate densification by vacancy annihilation removes an isolated pore site at a grain boundary and collapses a column of sites extending from the vacancy to the surface of sintering compact, through the center of mass of the nearest grain. Using this algorithm, the existing published kMC models are shown to produce anisotropic strains for homogeneous powder compacts with aspect ratios different from unity. It is shown that the line direction biases shrinkage strains in proportion the compact dimension aspect ratios. A new algorithm that corrects this bias in strains is proposed; the direction for collapsing the column is determined by choosing a random sample face and subsequently a random point on that face as the end point for an annihilation path with equal probabilities. This algorithm is mathematically and experimentally shown to result in isotropic strains for all samples regardless of their dimensions. Finally, the microstructural evolution is shown to be similar for the new and old annihilation algorithms. △ Less

Submitted 29 September, 2014; originally announced September 2014.

Comments: 6 pages, 6 figures

Journal ref: Computational Materials Science, Vol. 82 (1), 293-297, 2014

Analysis of the internal heat losses in a thermoelectric generator

Authors: R. Bjørk, D. V. Christensen, D. Eriksen, N. Pryds

Abstract: A 3D thermoelectric numerical model is used to investigate different internal heat loss mechanisms for a thermoelectric generator with bismuth telluride p- and n-legs. The model considers all thermoelectric effects, temperature dependent material parameters and simultaneous convective, conductive and radiative heat losses, including surface to surface radiation. For radiative heat losses it is sho… ▽ More A 3D thermoelectric numerical model is used to investigate different internal heat loss mechanisms for a thermoelectric generator with bismuth telluride p- and n-legs. The model considers all thermoelectric effects, temperature dependent material parameters and simultaneous convective, conductive and radiative heat losses, including surface to surface radiation. For radiative heat losses it is shown that for the temperatures considered here, surface to ambient radiation is a good approximation of the heat loss. For conductive heat transfer the module efficiency is shown to be comparable to the case of radiative losses. Finally, heat losses due to internal natural convection in the module is shown to be negligible for the millimetre sized modules considered here. The combined case of radiative and conductive heat transfer resulted in the lowest efficiency. The optimized load resistance is found to decrease for increased heat loss. The leg dimensions are varied for all heat losses cases and it is shown that the ideal way to construct a TEG module with minimal heat losses and maximum efficiency is to either use a good insulating material between the legs or evacuate the module completely, and use small and wide legs closely spaced. △ Less

Submitted 19 September, 2014; originally announced September 2014.

Comments: 11 pages, 9 figures

Journal ref: International Journal of Thermal Sciences, Vol. 85, 12-20, 2014

In situ characterization of delamination and crack growth of a CGO-LSM multi-layer ceramic sample investigated by X-ray tomographic microscopy

Authors: R. Bjørk, V. Esposito, E. M. Lauridsen, P. S. Jørgensen, J. L. Fife, K. B. Andersen, S. P. V. Foghmoes, N. Pryds

Abstract: The densification, delamination and crack growth behavior in a Ce$_{0.9}$Gd$_{0.1}$O$_{1.95}$ (CGO) and (La$_{0.85}$Sr$_{0.15})_{0.9}$MnO$_{3}$ (LSM) multi-layer ceramic sample was studied using in situ X-ray tomographic microscopy (microtomography), to investigate the critical dynamics of crack propagation and delamination in a multilayered sample. Naturally occurring defects, caused by the sampl… ▽ More The densification, delamination and crack growth behavior in a Ce$_{0.9}$Gd$_{0.1}$O$_{1.95}$ (CGO) and (La$_{0.85}$Sr$_{0.15})_{0.9}$MnO$_{3}$ (LSM) multi-layer ceramic sample was studied using in situ X-ray tomographic microscopy (microtomography), to investigate the critical dynamics of crack propagation and delamination in a multilayered sample. Naturally occurring defects, caused by the sample preparation process, are shown not to be critical in sample degradation. Instead defects are nucleated during the debinding step. Crack growth is significantly faster along the material layers than perpendicular to them, and crack growth and delamination only accelerates when sintering occurs. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: 9 pages, 8 figures

Journal ref: Journal of the European Ceramic Society, Vol. 34 (12), 3019-3025, 2014

Analysis of the magnetic field, force, and torque for two-dimensional Halbach cylinders

Authors: R. Bjørk, C. R. H. Bahl, A. Smith, N. Pryds

Abstract: The Halbach cylinder is a construction of permanent magnets used in applications such as nuclear magnetic resonance apparatus, accelerator magnets and magnetic cooling devices. In this paper the analytical expression for the magnetic vector potential, magnetic flux density and magnetic field for a two dimensional Halbach cylinder are derived. The remanent flux density of a Halbach magnet is charac… ▽ More The Halbach cylinder is a construction of permanent magnets used in applications such as nuclear magnetic resonance apparatus, accelerator magnets and magnetic cooling devices. In this paper the analytical expression for the magnetic vector potential, magnetic flux density and magnetic field for a two dimensional Halbach cylinder are derived. The remanent flux density of a Halbach magnet is characterized by the integer $p$. For a number of applications the force and torque between two concentric Halbach cylinders are important. These quantities are calculated and the force is shown to be zero except for the case where $p$ for the inner magnet is one minus $p$ for the outer magnet. Also the force is shown never to be balancing. The torque is shown to be zero unless the inner magnet $p$ is equal to minus the outer magnet $p$. Thus there can never be a force and a torque in the same system. △ Less

Submitted 5 September, 2014; originally announced September 2014.

Journal ref: Journal of Magnetism and Magnetic Materials, Vol. 322 (1), 133-141, 2014

Visible light enhanced field effect at LaAlO3/SrTiO3 interface

Authors: Y. Lei, Y. Z. Chen, Y. W. Xie, Y. Li, Y. S. Chen, S. H. Wang, J. Wang, B. G. Shen, N. Pryds, H. Y. Hwang, J. R. Sun

Abstract: Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a qu… ▽ More Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces. △ Less

Submitted 23 May, 2014; originally announced May 2014.

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Authors: Y. Z. Chen, N. Bovet, T. Kasama, W. W. Gao, S. Yazdi, C. Ma, N. Pryds, S. Linderoth

Abstract: Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface. Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface. △ Less

Submitted 13 December, 2013; originally announced December 2013.

Comments: Adv. Mater. published on-line

High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities

Authors: Y. Z. Chen, N. Pryds, J. R. Sun, B. G. Shen, S. Linderoth

Abstract: The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been ma… ▽ More The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides. △ Less

Submitted 9 September, 2013; originally announced September 2013.

Comments: 29 pages, 11 figures. Invited topical review for Chin. Phys. B.; To be published in Dec. 2013

Journal ref: Chin. Phys. B.; Vol. 22, issue 11, page, 116803, 2013

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Authors: Y. Z. Chen, N. Bovet, F. Trier, D. V. Christensen, F. M. Qu, N. H. Andersen, T. Kasama, W. Zhang, R. Giraud, J. Dufouleur, T. S. Jespersen, J. R. Sun, A. Smith, J. Nygård, L. Lu, B. Büchner, B. G. Shen, S. Linderoth, N. Pryds

Abstract: The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain… ▽ More The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices. △ Less

Submitted 1 April, 2013; originally announced April 2013.

Comments: 25pages, 5 figures

Journal ref: Nature Communications, Nat Commun. 2013;4:1371

Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures

Authors: Yunzhong Chen, Nini Pryds, Josee E. Kleibeuker, Gertjan Koster, Jirong Sun, Eugen Stamate, Baogen Shen, Guus Rijnders, S. Linderoth

Abstract: The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8M… ▽ More The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO3 substrates play an important role. △ Less

Submitted 31 December, 2012; originally announced December 2012.

Comments: 17 pages, 4 figures

Journal ref: Nano letters, Nano. Lett. 11, 3774 (2011)

Magnetic cooling at Risoe DTU

Authors: K. K. Nielsen, R. Bjoerk, J. B. Jensen, C. R. H Bahl, N. Pryds, A. Smith, A. Nordentoft, J. Hattel

Abstract: Magnetic refrigeration at room temperature is of great interest due to a long-term goal of making refrigeration more energy-efficient, less noisy and free of any environmentally hostile materials. A refrigerator utilizing an active magnetic regenerator (AMR) is based on the magnetocaloric effect, which manifests itself as a temperature change in magnetic materials when subjected to a varying mag… ▽ More Magnetic refrigeration at room temperature is of great interest due to a long-term goal of making refrigeration more energy-efficient, less noisy and free of any environmentally hostile materials. A refrigerator utilizing an active magnetic regenerator (AMR) is based on the magnetocaloric effect, which manifests itself as a temperature change in magnetic materials when subjected to a varying magnetic field. In this work we present the current state of magnetic refrigeration research at Risoe DTU with emphasis on the numerical modeling of an existing AMR test machine. A 2D numerical heat-transfer and fluid-flow model that represents the experimental setup is presented. Experimental data of both no-heat load and heat load situations are compared to the model. Moreover, results from the numerical modeling of the permanent magnet design used in the system are presented. △ Less

Submitted 4 February, 2009; originally announced February 2009.

Comments: 8 pages, 10 figures, 2 tables, conference paper