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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Demonstration of Universal Parametric Entangling Gates on a Multi-Qubit Lattice
Authors:
M. Reagor,
C. B. Osborn,
N. Tezak,
A. Staley,
G. Prawiroatmodjo,
M. Scheer,
N. Alidoust,
E. A. Sete,
N. Didier,
M. P. da Silva,
E. Acala,
J. Angeles,
A. Bestwick,
M. Block,
B. Bloom,
A. Bradley,
C. Bui,
S. Caldwell,
L. Capelluto,
R. Chilcott,
J. Cordova,
G. Crossman,
M. Curtis,
S. Deshpande,
T. El Bouayadi
, et al. (34 additional authors not shown)
Abstract:
We show that parametric coupling techniques can be used to generate selective entangling interactions for multi-qubit processors. By inducing coherent population exchange between adjacent qubits under frequency modulation, we implement a universal gateset for a linear array of four superconducting qubits. An average process fidelity of $\mathcal{F}=93\%$ is estimated for three two-qubit gates via…
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We show that parametric coupling techniques can be used to generate selective entangling interactions for multi-qubit processors. By inducing coherent population exchange between adjacent qubits under frequency modulation, we implement a universal gateset for a linear array of four superconducting qubits. An average process fidelity of $\mathcal{F}=93\%$ is estimated for three two-qubit gates via quantum process tomography. We establish the suitability of these techniques for computation by preparing a four-qubit maximally entangled state and comparing the estimated state fidelity against the expected performance of the individual entangling gates. In addition, we prepare an eight-qubit register in all possible bitstring permutations and monitor the fidelity of a two-qubit gate across one pair of these qubits. Across all such permutations, an average fidelity of $\mathcal{F}=91.6\pm2.6\%$ is observed. These results thus offer a path to a scalable architecture with high selectivity and low crosstalk.
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Submitted 26 February, 2018; v1 submitted 20 June, 2017;
originally announced June 2017.
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Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$
Authors:
Felix Trier,
Guenevere E. D. K. Prawiroatmodjo,
Zhicheng Zhong,
Merlin von Soosten,
Dennis Valbjørn Christensen,
Arghya Bhowmik,
Juan Maria García Lastra,
Yunzhong Chen,
Thomas Sand Jespersen,
Nini Pryds
Abstract:
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 h…
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The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.
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Submitted 29 August, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
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Patterning of high mobility electron gases at complex oxide interfaces
Authors:
Felix Trier,
Guenevere E. D. K. Prawiroatmodjo,
Merlin von Soosten,
Dennis Valbjørn Christensen,
Thomas Sand Jespersen,
Yunzhong Chen,
Nini Pryds
Abstract:
Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning…
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Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO$_3$/SrTiO$_3$ (a-LAO/STO) and modulation-doped amorphous- LaAlO$_3$/La$_{7/8}$Sr$_{1/8}$MnO$_3$/SrTiO$_3$ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm$^2$/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm$^2$/Vs at 2 K.
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Submitted 21 January, 2016;
originally announced January 2016.
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Evidence of weak superconductivity at the room-temperature grown LaAlO$_{3}$/SrTiO$_3$ interface
Authors:
Guenevere E. D. K. Prawiroatmodjo,
Felix Trier,
Dennis V. Christensen,
Yunzhong Chen,
Nini Pryds,
Thomas S. Jespersen
Abstract:
The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study i…
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The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of $460 \, \mathrm{mK}$, higher than any previously reported values for c-LAO/STO. The dependence of the superconducting critical current on temperature, magnetic field and backgate-controlled do** is found to be consistently described by a model of a random array of Josephson-coupled superconducting domains.
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Submitted 26 April, 2016; v1 submitted 5 October, 2015;
originally announced October 2015.
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Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation do**
Authors:
Y. Z. Chen,
F. Trier,
T. Wijnands,
R. J. Green,
N. Gauquelin,
R. Egoavil,
D. V. Christensen,
G. Koster,
M. Huijben,
N. Bovet,
S. Macke,
F. He,
R. Sutarto,
N. H. Andersen,
G. E. D. K. Prawiroatmodjo,
T. S. Jespersen,
J. A. Sulpizio,
M. Honig,
S. Linderoth,
S. Ilani,
J. Verbeeck,
G. Van Tendeloo,
G. Rijnders,
G. A. Sawatzky,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon…
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The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for develo** all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation do** of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
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Submitted 22 April, 2015;
originally announced April 2015.
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Universal Distance-Scaling of Non-radiative Energy Transfer to Graphene
Authors:
L. Gaudreau,
K. J. Tielrooij,
G. E. D. K. Prawiroatmodjo,
J. Osmond,
F. J. Garcia de Abajo,
F. H. L. Koppens
Abstract:
The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The obser…
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The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The observed energy transfer- rate is in agreement with a 1/d^4 dependence that is characteristic of 2D lossy media. The emitter decay rate is enhanced 90 times (transfer efficiency of ~99%) with respect to the decay in vacuum at distances d ~ 5 nm. This high energy-transfer rate is mainly due to the two-dimensionality and gapless character of the monoatomic carbon layer. Graphene is thus shown to be an extraordinary energy sink, holding great potential for photodetection, energy harvesting, and nanophotonics.
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Submitted 20 January, 2013;
originally announced January 2013.
