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One-dimensional proximity superconductivity in the quantum Hall regime
Authors:
Julien Barrier,
Minsoo Kim,
Roshan Krishna Kumar,
Na Xin,
P. Kumaravadivel,
Lee Hague,
E. Nguyen,
A. I. Berdyugin,
Christian Moulsdale,
V. V. Enaldiev,
J. R. Prance,
F. H. L. Koppens,
R. V. Gorbachev,
K. Watanabe,
T. Taniguchi,
L. I. Glazman,
I. V. Grigorieva,
V. I. Fal'ko,
A. K. Geim
Abstract:
Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applicati…
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Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration.
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Submitted 25 April, 2024; v1 submitted 22 February, 2024;
originally announced February 2024.
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QUEST-DMC: Background Modelling and Resulting Heat Deposit for a Superfluid Helium-3 Bolometer
Authors:
S. Autti,
A. Casey,
N. Eng,
N. Darvishi,
P. Franchini,
R. P. Haley,
P. J. Heikkinen,
A. Kemp,
E. Leason,
L. V. Levitin,
J. Monroe,
J. March-Russel,
M. T. Noble,
J. R. Prance,
X. Rojas,
T. Salmon,
J. Saunders,
R. Smith,
M. D. Thompson,
V. Tsepelin,
S. M. West,
L. Whitehead,
K. Zhang,
D. E. Zmeev
Abstract:
We report the results of radioactivity assays and heat leak calculations for a range of common cryogenic materials, considered for use in the QUEST-DMC superfluid 3He dark matter detector. The bolometer, instrumented with nanomechanical resonators, will be sensitive to energy deposits from dark matter interactions. Events from radioactive decays and cosmic rays constitute a significant background…
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We report the results of radioactivity assays and heat leak calculations for a range of common cryogenic materials, considered for use in the QUEST-DMC superfluid 3He dark matter detector. The bolometer, instrumented with nanomechanical resonators, will be sensitive to energy deposits from dark matter interactions. Events from radioactive decays and cosmic rays constitute a significant background and must be precisely modelled, using a combination of material screening and Monte Carlo simulations. However, the results presented here are of wider interest for experiments and quantum devices sensitive to minute heat leaks and spurious events, thus we present heat leak per unit mass or surface area for every material studied. This can inform material choices for other experiments, especially if underground operation is considered where the radiogenic backgrounds will dominate even at shallow depths.
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Submitted 19 May, 2024; v1 submitted 31 January, 2024;
originally announced February 2024.
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Long nanomechanical resonators with circular cross-section
Authors:
Samuli Autti,
Andrew Casey,
Marie Connelly,
Neda Darvishi,
Paolo Franchini,
James Gorman,
Richard P. Haley,
Petri J. Heikkinen,
Ashlea Kemp,
Elizabeth Leason,
John March-Russell,
Jocelyn Monroe,
Theo Noble,
George R. Pickett,
Jonathan R. Prance,
Xavier Rojas,
Tineke Salmon,
John Saunders,
Jack Slater,
Robert Smith,
Michael D. Thompson,
Stephen M. West,
Luke Whitehead,
Vladislav V. Zavjalov,
Kuang Zhang
, et al. (1 additional authors not shown)
Abstract:
Fabrication of superconducting nanomechanical resonators for quantum research, detectors and devices traditionally relies on a lithographic process, resulting in oscillators with sharp edges and a suspended length limited to a few 100 micrometres. We report a low-investment top-down approach to fabricating NbTi nanowire resonators with suspended lengths up to several millimetres and diameters down…
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Fabrication of superconducting nanomechanical resonators for quantum research, detectors and devices traditionally relies on a lithographic process, resulting in oscillators with sharp edges and a suspended length limited to a few 100 micrometres. We report a low-investment top-down approach to fabricating NbTi nanowire resonators with suspended lengths up to several millimetres and diameters down to 100 nanometres. The nanowires possess high critical currents and fields, making them a natural choice for magnetomotive actuation and sensing. This fabrication technique is independent of the substrate material, dimensions and layout and can readily be adapted to fabricate nanowire resonators from any metal or alloy with suitable ductility and yield strength. Our work thus opens access to a new class of nanomechanical devices with applications including microscopic and mesoscopic investigations of quantum fluids, detecting dark matter and fundamental materials research in one-dimensional superconductors in vacuum.
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Submitted 4 November, 2023;
originally announced November 2023.
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QUEST-DMC superfluid $^3$He detector for sub-GeV dark matter
Authors:
S. Autti,
A. Casey,
N. Eng,
N. Darvishi,
P. Franchini,
R. P. Haley,
P. J. Heikkinen,
A. Jennings,
A. Kemp,
E. Leason,
L. V. Levitin,
J. Monroe,
J. March-Russel,
M. T. Noble,
J. R. Prance,
X. Rojas,
T. Salmon,
J. Saunders,
R. Smith,
M. D. Thompson,
V. Tsepelin,
S. M. West,
L. Whitehead,
V. V. Zavjalov,
D. E. Zmeev
Abstract:
The focus of dark matter searches to date has been on Weakly Interacting Massive Particles (WIMPs) in the GeV/$c^2$-TeV/$c^2$ mass range. The direct, indirect and collider searches in this mass range have been extensive but ultimately unsuccessful, providing a strong motivation for widening the search outside this range. Here we describe a new concept for a dark matter experiment, employing superf…
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The focus of dark matter searches to date has been on Weakly Interacting Massive Particles (WIMPs) in the GeV/$c^2$-TeV/$c^2$ mass range. The direct, indirect and collider searches in this mass range have been extensive but ultimately unsuccessful, providing a strong motivation for widening the search outside this range. Here we describe a new concept for a dark matter experiment, employing superfluid $^3$He as a detector for dark matter that is close to the mass of the proton, of order 1 GeV/$c^2$. The QUEST-DMC detector concept is based on quasiparticle detection in a bolometer cell by a nanomechanical resonator. In this paper we develop the energy measurement methodology and detector response model, simulate candidate dark matter signals and expected background interactions, and calculate the sensitivity of such a detector. We project that such a detector can reach sub-eV nuclear recoil energy threshold, opening up new windows on the parameter space of both spin-dependent and spin-independent interactions of light dark matter candidates.
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Submitted 14 March, 2024; v1 submitted 17 October, 2023;
originally announced October 2023.
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Observation of Kondo condensation in a degenerately doped silicon metal
Authors:
H. Im,
D. U. Lee,
Y. Jo,
J. Kim,
Y. Chong,
W. Song,
H. Kim,
E. K. Kim,
S. -J. Sin,
S. Moon,
J. R. Prance,
Yu. A. Pashkin,
J. S. Tsai
Abstract:
When a magnetic moment is embedded in a metal, it captures itinerant electrons to form the Kondo cloud1,2, which can spread out over a few micrometres3,4. For a metal with dense magnetic impurities such that Kondo clouds overlap with each other, correlated ground states are formed. When the impurities form a regular lattice, the result is a heavy fermion or anti-ferromagnetic order depending on th…
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When a magnetic moment is embedded in a metal, it captures itinerant electrons to form the Kondo cloud1,2, which can spread out over a few micrometres3,4. For a metal with dense magnetic impurities such that Kondo clouds overlap with each other, correlated ground states are formed. When the impurities form a regular lattice, the result is a heavy fermion or anti-ferromagnetic order depending on the dominant interaction5,6. Even in the case of random impurities, overlap** Kondo clouds are expected to form a coherent ground state. Here, we examine this issue by performing electrical transport and high-precision tunnelling density-of-states (DOS) spectroscopy measurements in a highly P-doped crystalline silicon metal where disorder-induced localized magnetic moments exist7. We detect the Kondo effect in the resistivity of the Si metal below 2 K and an exotic pseudogap in the DOS with gap edge peaks at a Fermi energy below 100 mK. The DOS gap and peaks are tuned by applying an external magnetic field and transformed into a metallic Altshuler-Aronov gap8 in the paramagnetic disordered Fermi liquid (DFL) phase. We interpret this phenomenon as the Kondo condensation, the formation of a correlated ground state of overlap** Kondo clouds, and its transition to a DFL. The boundary between the Kondo condensation and DFL phases is identified by analysing distinct DOS spectra in the magnetic field-temperature plane. A detailed theoretical analysis using a holographic method 9 , 10 , 11 reproduces the unusual DOS spectra, 1, supporting our scenario. Our work demonstrates the observation of the magnetic version of Bardeen-Cooper-Shrieffer (BCS) pair condensation and will be useful for understanding complex Kondo systems.
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Submitted 21 January, 2023;
originally announced January 2023.
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Thermal transport in nanoelectronic devices cooled by on-chip magnetic refrigeration
Authors:
S. Autti,
F. C. Bettsworth,
K. Grigoras,
D. Gunnarsson,
R. P. Haley,
A. T. Jones,
Yu. A. Pashkin,
J. R. Prance,
M. Prunnila,
M. D. Thompson,
D. E. Zmeev
Abstract:
On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal subsystem dynamics are yet to be analyzed. We study a Coulomb blockade thermometer with on-chip copper refrigerant both experimentally and numerically, showing that dy…
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On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal subsystem dynamics are yet to be analyzed. We study a Coulomb blockade thermometer with on-chip copper refrigerant both experimentally and numerically, showing that dynamics in this device are captured by a first-principles model. Our work shows how to simulate thermal dynamics in devices down to microkelvin temperatures, and outlines a recipe for a low-investment platform for quantum technologies and fundamental nanoscience in this novel temperature range.
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Submitted 31 May, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
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Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer
Authors:
Mohammad Samani,
Christian P. Scheller,
Nikolai Yurttagül,
Kestutis Grigoras,
David Gunnarsson,
Omid Sharifi Sedeh,
Alexander T. Jones,
Jonathan R. Prance,
Richard P. Haley,
Mika Prunnila,
Dominik M. Zumbühl
Abstract:
Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states of matter, and also the discovery of unexpected phenomena. Adiabatic demagnetization is the workhorse of microkelvin cooling, requiring a dilution refrigerator…
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Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of \emph{on-chip} temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states of matter, and also the discovery of unexpected phenomena. Adiabatic demagnetization is the workhorse of microkelvin cooling, requiring a dilution refrigerator precooling stage. Pulse-tube dilution refrigerators have grown enormously in popularity due to their vast experimental space and independence of helium, but their unavoidable vibrations are making microkelvin cooling very difficult. On-chip thermometry in this unexplored territory is also not a trivial task due to extreme sensitivity to noise. Here, we present a pulse-tube compatible microkelvin sample holder with on-board cooling and microwave filtering and introduce a new type of temperature sensor, the gate Coulomb blockade thermometer (gCBT), working deep into the microkelvin regime. Using on- and off-chip cooling, we demonstrate electronic temperatures as low as 224$\pm$7$μ$K, remaining below 300$μ$K for 27 hours, thus providing sufficient time for measurements. Finally, we give an outlook for cooling below 50$μ$K for a new generation of microkelvin transport experiments.
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Submitted 12 October, 2021;
originally announced October 2021.
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Non-galvanic calibration and operation of a quantum dot thermometer
Authors:
J. M. A. Chawner,
S. Barraud,
M. F. Gonzalez-Zalba,
S. Holt,
E. A. Laird,
Yu. A. Pashkin,
J. R. Prance
Abstract:
A cryogenic quantum dot thermometer is calibrated and operated using only a single non-galvanic gate connection. The thermometer is probed with radio-frequency reflectometry and calibrated by fitting a physical model to the phase of the reflected radio-frequency signal taken at temperatures across a small range. Thermometry of the source and drain reservoirs of the dot is then performed by fitting…
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A cryogenic quantum dot thermometer is calibrated and operated using only a single non-galvanic gate connection. The thermometer is probed with radio-frequency reflectometry and calibrated by fitting a physical model to the phase of the reflected radio-frequency signal taken at temperatures across a small range. Thermometry of the source and drain reservoirs of the dot is then performed by fitting the calibrated physical model to new phase data. The thermometer can operate at the transition between thermally broadened and lifetime broadened regimes, and outside the temperatures used in calibration. Electron thermometry was performed at temperatures between $3.0\,\mathrm{K}$ and $1.0\,\mathrm{K}$, in both a $1\,\mathrm{K}$ cryostat and a dilution refrigerator. The experimental setup allows fast electron temperature readout with a sensitivity of $4.0\pm0.3 \, \mathrm{mK}/\sqrt{\mathrm{Hz}}$, at Kelvin temperatures. The non-galvanic calibration process gives a readout of physical parameters, such as the quantum dot lever arm. The demodulator used for reflectometry readout is readily available and very affordable.
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Submitted 28 January, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Long-range ballistic transport of Brown-Zak fermions in graphene superlattices
Authors:
Julien Barrier,
Piranavan Kumaravadivel,
Roshan Krishna-Kumar,
L. A. Ponomarenko,
Na Xin,
Matthew Holwill,
Ciaran Mullan,
Minsoo Kim,
R. V. Gorbachev,
M. D. Thompson,
J. R. Prance,
T. Taniguchi,
K. Watanabe,
I. V. Grigorieva,
K. S. Novoselov,
A. Mishchenko,
V. I. Fal'ko,
A. K. Geim,
A. I. Berdyugin
Abstract:
In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Br…
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In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10$^6$ cm$^2$V$^{-1}$s$^{-1}$ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are $4q$ times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1K. We also found negative bend resistance at $1/q$ fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field.
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Submitted 6 October, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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Progress in cooling nanoelectronic devices to ultra-low temperatures
Authors:
A. T. Jones,
C. P. Scheller,
J. R. Prance,
Y. B. Kalyoncu,
D. M. Zumbühl,
R. P. Haley
Abstract:
Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the low…
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Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the lowest reported on-chip electron temperature having remained around 4 mK for more than 15 years. This is despite the fact that microkelvin temperatures have been accessible in bulk materials since the mid 20th century. In this review we describe progress made in the last five years using new cooling techniques. Developments have been driven by improvements in the understanding of nanoscale physics, material properties and heat flow in electronic devices at ultralow temperatures, and have involved collaboration between universities and institutes, physicists and engineers. We hope that this review will serve as a summary of the current state-of-the-art, and provide a roadmap for future developments. We focus on techniques that have shown, in experiment, the potential to reach sub-millikelvin electron temperatures. In particular, we focus on on-chip demagnetisation refrigeration. Multiple groups have used this technique to reach temperatures around 1 mK, with a current lowest temperature below 0.5 mK.
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Submitted 8 June, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
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Operating Nanobeams in a Quantum Fluid
Authors:
D. I. Bradley,
R. George,
A. M. Guenault,
R. P. Haley,
S. Kafanov,
M. T. Noble,
Yu. A. Pashkin,
G. R. Pickett,
M. Poole,
J. R. Prance,
M. Sarsby,
R. Schanen,
V. Tsepelin,
T. Wilcox,
D. E. Zmeev
Abstract:
Microelectromechanical (MEMS) and nanoelectromechanical systems (NEMS) are ideal candidates for exploring quantum fluids since they can be manufactured reproducibly, cover the frequency range from hundreds of kilohertz up to gigahertz and usually have very low power dissipation. Their small size offers the possibility of probing the superfluid on scales comparable to, and below, the coherence leng…
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Microelectromechanical (MEMS) and nanoelectromechanical systems (NEMS) are ideal candidates for exploring quantum fluids since they can be manufactured reproducibly, cover the frequency range from hundreds of kilohertz up to gigahertz and usually have very low power dissipation. Their small size offers the possibility of probing the superfluid on scales comparable to, and below, the coherence length. That said, there have been hitherto no successful measurements of NEMS resonators in the liquid phases of helium. Here we report the operation of doubly-clamped aluminum nanobeams in superfluid $^4$He at temperatures spanning the superfluid transition. The devices are shown to be very sensitive detectors of the superfluid density and the normal fluid dam**. However, a further and very important outcome of this work is the knowledge that now we have demonstrated that these devices can be successfully operated in superfluid $^4$He, it is straightforward to apply them in superfluid $^3$He which can be routinely cooled to below 100\,$μ$K. This brings us into the regime where nanomechanical devices operating at a few MHz frequencies may enter their mechanical quantum ground state.
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Submitted 19 September, 2018;
originally announced September 2018.
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Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit
Authors:
Zhenyi Qi,
X. Wu,
D. R. Ward,
J. R. Prance,
Dohun Kim,
John King Gamble,
R. T. Mohr,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
Mark Friesen,
S. N. Coppersmith,
M. G. Vavilov
Abstract:
We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from c…
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We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.
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Submitted 15 June, 2017; v1 submitted 24 January, 2017;
originally announced January 2017.
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Edge currents shunt the insulating bulk in gapped graphene
Authors:
M. J. Zhu,
A. V. Kretinin,
M. D. Thompson,
D. A. Bandurin,
S. Hu,
G. L. Yu,
J. Birkbeck,
A. Mishchenko,
I. J. Vera-Marun,
K. Watanabe,
T. Taniguchi,
M. Polini,
J. R. Prance,
K. S. Novoselov,
A. K. Geim,
M. Ben Shalom
Abstract:
An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we investigate spatial distributions of prox…
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An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for such semiconductors at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we investigate spatial distributions of proximity-induced superconducting currents in gapped graphene and, also, compare measurements in the Hall bar and Corbino geometries in the normal state. By gradually opening the gap in bilayer graphene, we find that the supercurrent at the charge neutrality point changes from uniform to such that it propagates along narrow stripes near graphene edges. Similar stripes are found in gapped monolayers. These observations are corroborated by using the "edgeless" Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. This is in contrast to the Hall bar geometry where resistivity measured under similar conditions saturates to values of only about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.
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Submitted 18 December, 2016;
originally announced December 2016.
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On-chip magnetic cooling of a nanoelectronic device
Authors:
D. I. Bradley,
A. M. Guénault,
D. Gunnarsson,
R. P. Haley,
S. Holt,
A. T. Jones,
Yu. A. Pashkin,
J. Penttilä,
J. R. Prance,
M. Prunnila,
L. Roschier
Abstract:
We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the electrons directly to a bath of refrigerated nuclei, rather than cooling via phonons in the host lattice. Consequently, weak electron-phonon scattering becomes an adv…
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We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the electrons directly to a bath of refrigerated nuclei, rather than cooling via phonons in the host lattice. Consequently, weak electron-phonon scattering becomes an advantage. It allows the electrons to be cooled for an experimentally useful period of time to temperatures colder than the dilution refrigerator platform, the incoming electrical connections, and the host lattice. There are efforts worldwide to reach sub-millikelvin electron temperatures in nanostructures to study coherent electronic phenomena and improve the operation of nanoelectronic devices. On-chip magnetic cooling is a promising approach to meet this challenge. The method can be used to reach low, local electron temperatures in other nanostructures, obviating the need to adapt traditional, large demagnetisation stages. We demonstrate the technique by applying it to a nanoelectronic primary thermometer that measures its internal electron temperature. Using an optimised demagnetisation process, we demonstrate cooling of the on-chip electrons from 9 mK to below 5 mK for over 1000 seconds.
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Submitted 4 July, 2017; v1 submitted 8 November, 2016;
originally announced November 2016.
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Identifying single electron charge sensor events using wavelet edge detection
Authors:
J. R. Prance,
B. J. Van Bael,
C. B. Simmons,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an a…
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The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise.
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Submitted 7 June, 2015;
originally announced June 2015.
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Nanoelectronic thermometers optimised for sub-10 millikelvin operation
Authors:
J. R. Prance,
D. I. Bradley,
R. E. George,
R. P. Haley,
Yu. A. Pashkin,
M. Sarsby,
J. Penttilä,
L. Roschier,
D. Gunnarsson,
H. Heikkinen,
M. Prunnila
Abstract:
We report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. Above 7 mK the devices are in good thermal contact with the environment, well isolated from electrical noise, and not susceptible to self-heating. This is attributed to an optimised design that incorporates cooling fins with a high electron-phonon coupling and on-chip electronic filters, combined with a…
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We report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. Above 7 mK the devices are in good thermal contact with the environment, well isolated from electrical noise, and not susceptible to self-heating. This is attributed to an optimised design that incorporates cooling fins with a high electron-phonon coupling and on-chip electronic filters, combined with a low-noise electronic measurement setup. Below 7 mK the electron temperature is seen to diverge from the ambient temperature. By immersing a Coulomb Blockade Thermometer in the 3He/4He refrigerant of a dilution refrigerator, we measure a lowest electron temperature of 3.7 mK.
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Submitted 10 June, 2015; v1 submitted 27 May, 2015;
originally announced May 2015.
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Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
Authors:
Ryan H. Foote,
Daniel R. Ward,
J. R. Prance,
John King Gamble,
Erik Nielsen,
Brandur Thorgrimsson,
D. E. Savage,
A. L. Saraiva,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurem…
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Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
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Submitted 12 May, 2015; v1 submitted 8 May, 2015;
originally announced May 2015.
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Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene
Authors:
M. Ben Shalom,
M. J. Zhu,
V. I. Fal'ko,
A. Mishchenko,
A. V. Kretinin,
K. S. Novoselov,
C. R. Woods,
K. Watanabe,
T. Taniguchi,
A. K. Geim,
J. R. Prance
Abstract:
Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only…
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Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion.
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Submitted 16 December, 2015; v1 submitted 13 April, 2015;
originally announced April 2015.
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Two-axis control of a singlet-triplet qubit with an integrated micromagnet
Authors:
Xian Wu,
D. R. Ward,
J. R. Prance,
Dohun Kim,
John King Gamble,
R. T. Mohr,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement…
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The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $ΔB$ between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector about two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time $T_{2}^{*}$ is determined. By measuring $T_{2}^{*}$ at many different values of the exchange coupling $J$ and at two different values of $ΔB$, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on $T_{2}^{*}$ arising from charge noise and from coupling to nuclear spins.
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Submitted 24 November, 2014; v1 submitted 28 February, 2014;
originally announced March 2014.
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Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
Authors:
Dohun Kim,
Zhan Shi,
C. B. Simmons,
D. R. Ward,
J. R. Prance,
Teck Seng Koh,
John King Gamble,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for i…
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The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pum** of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction.
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Submitted 17 January, 2014;
originally announced January 2014.
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Fast coherent manipulation of three-electron states in a double quantum dot
Authors:
Zhan Shi,
C. B. Simmons,
Daniel R. Ward,
J. R. Prance,
Xian Wu,
Teck Seng Koh,
John King Gamble,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on…
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A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz.
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Submitted 2 August, 2013;
originally announced August 2013.
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Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna
Authors:
E. Kawakami,
P. Scarlino,
L. R. Schreiber,
J. R. Prance,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
L. M. K. Vandersypen
Abstract:
We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by h…
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We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by heating of the reservoirs.
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Submitted 10 January, 2013;
originally announced January 2013.
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Coherent Quantum Oscillations in a Silicon Charge Qubit
Authors:
Zhan Shi,
C. B. Simmons,
Daniel. R. Ward,
J. R. Prance,
R. T. Mohr,
Teck Seng Koh,
John King Gamble,
Xian. Wu,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b…
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Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.
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Submitted 17 July, 2013; v1 submitted 2 August, 2012;
originally announced August 2012.
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A fast "hybrid" silicon double quantum dot qubit
Authors:
Zhan Shi,
C. B. Simmons,
J. R. Prance,
John King Gamble,
Teck Seng Koh,
Yun-Pil Shim,
Xuedong Hu,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
Mark Friesen,
S. N. Coppersmith
Abstract:
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occ…
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We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.
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Submitted 30 October, 2011;
originally announced October 2011.
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Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
Authors:
J. R. Prance,
Zhan Shi,
C. B. Simmons,
D. E. Savage,
M. G. Lagally,
L. R. Schreiber,
L. M. K. Vandersypen,
Mark Friesen,
Robert Joynt,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three tripl…
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We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T.
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Submitted 2 November, 2011; v1 submitted 28 October, 2011;
originally announced October 2011.
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Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
Authors:
Zhan Shi,
C. B. Simmons,
J. R. Prance,
John King Gamble,
Mark Friesen,
D. E. Savage,
M. G. Lagally,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realiz…
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We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state.
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Submitted 11 December, 2011; v1 submitted 2 September, 2011;
originally announced September 2011.
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Tunable spin-selective loading of a silicon spin qubit
Authors:
C. B. Simmons,
J. R. Prance,
B. J. Van Bael,
Teck Seng Koh,
Zhan Shi,
D. E. Savage,
M. G. Lagally,
R. Joynt,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manip…
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The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.
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Submitted 27 October, 2010;
originally announced October 2010.
