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Electric field enhances the electronic and diffusion properties of penta-graphene nanoribbons for application in lithium-ion batteries: a first-principles study
Authors:
Thi Nhan Tran,
Nguyen Vo Anh Duy,
Nguyen Hoang Hieu,
Truc Anh Nguyen,
Nguyen To Van,
Viet Bac Thi Phung,
Peter Schall,
Minh Triet Dang
Abstract:
Enhancing the electronic and diffusion properties of lithium-ion batteries is crucial for improving the performance of the fast-growing energy storage devices. Here we use first principles methods with density functional theory and the climbing image-nudged elastic band method to evaluate the impact of an external electric field on the stability, electronic and diffusion properties of penta-graphe…
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Enhancing the electronic and diffusion properties of lithium-ion batteries is crucial for improving the performance of the fast-growing energy storage devices. Here we use first principles methods with density functional theory and the climbing image-nudged elastic band method to evaluate the impact of an external electric field on the stability, electronic and diffusion properties of penta-graphene nanoribbons upon lithium adsorption. We show that by adsorbing a lithium atom, these semiconductor nanoribbons become metal with a formation energy of -0.22 (eV). The diffusion coefficient of this material is five orders of magnitude higher than that of a common carbon graphite layer. Under a relatively small vertical electric field, these lithium-ion systems are even more stable, and their diffusion coefficient is enhanced significantly of 711 times higher than that of the material in the absence of an applied electric field and 520 times higher than in the case of commercial graphitic carbon layers. Our results highlight the role of an external electric field as a novel switch to improve the efficiency of lithium-ion batteries with penta-graphene nanoribbon electrodes and open a new horizon for the use of more environmentally friendly pentagonal materials as electrode materials in lithium-ion battery industry.
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Submitted 18 June, 2024;
originally announced June 2024.
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Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization
Authors:
Chirag Garg,
Panagiotis Ch. Filippou,
Ikhtiar,
Yari Ferrante,
See-Hun Yang,
Brian Hughes,
Charles T. Rettner,
Timothy Phung,
Sergey Faleev,
Teya Topuria,
Mahesh G. Samant,
Jaewoo Jeong,
Stuart S. P. Parkin
Abstract:
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Mo…
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Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Moreover, the tunneling magnetoresistance is the highest yet achieved for a ferrimagnetic material at ambient temperature. Furthermore, the devices were prepared on technologically relevant amorphous substrates using a novel combination of a nitride seed layer and a chemical templating layer. These results show a clear path to the lowering of switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high performance magnetic random access memories beyond those nodes possible with ferromagnetic devices.
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Submitted 12 March, 2024;
originally announced March 2024.
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Spin-caloritronic transport in hexagonal graphene nanoflakes
Authors:
Thi Thu Phùng,
Robert Peters,
Andreas Honecker,
Guy Trambly de Laissardière,
Javad Vahedi
Abstract:
We investigate the spin-dependent thermoelectric effect of graphene flakes with magnetic edges in the ballistic regime. Employing static, respectively, dynamic mean-field theory we first show that magnetism appears at the zigzag edges for a window of Coulomb interactions that increases significantly with increasing flake size. We then use the Landauer formalism in the framework of the non-equilibr…
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We investigate the spin-dependent thermoelectric effect of graphene flakes with magnetic edges in the ballistic regime. Employing static, respectively, dynamic mean-field theory we first show that magnetism appears at the zigzag edges for a window of Coulomb interactions that increases significantly with increasing flake size. We then use the Landauer formalism in the framework of the non-equilibrium Green's function method to calculate the spin and charge currents in magnetic hexagonal graphene flakes by varying the temperature of the junction for different flake sizes. While in non-magnetic gated graphene the temperature gradient drives a charge current, we observe a significant spin current for hexagonal graphene flakes with magnetic zigzag edges. Specifically, we show that in the "meta" configuration of a hexagonal flake subject to weak Coulomb interactions, a pure spin current can be driven just by a temperature gradient in a temperature range that is promising for device applications. Bigger flakes are found to yield a bigger window of Coulomb interactions where such spin currents are induced by the magnetic zigzag edges, and larger values of the current.
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Submitted 31 July, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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The Hubbard model on the honeycomb lattice: from static and dynamical mean-field theories to lattice quantum Monte Carlo simulations
Authors:
Marcin Raczkowski,
Robert Peters,
Th\d{i} Thu Phùng,
Nayuta Takemori,
Fakher F. Assaad,
Andreas Honecker,
Javad Vahedi
Abstract:
We study the one-band Hubbard model on the honeycomb lattice using a combination of quantum Monte Carlo (QMC) simulations and static as well as dynamical mean-field theory (DMFT). This model is known to show a quantum phase transition between a Dirac semi-metal and the antiferromagnetic insulator. The aim of this article is to provide a detailed comparison between these approaches by computing sta…
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We study the one-band Hubbard model on the honeycomb lattice using a combination of quantum Monte Carlo (QMC) simulations and static as well as dynamical mean-field theory (DMFT). This model is known to show a quantum phase transition between a Dirac semi-metal and the antiferromagnetic insulator. The aim of this article is to provide a detailed comparison between these approaches by computing static properties, notably ground-state energy, single-particle gap, double occupancy, and staggered magnetization, as well as dynamical quantities such as the single-particle spectral function. At the static mean-field level local moments cannot be generated without breaking the SU(2) spin symmetry. The DMFT approximation accounts for temporal fluctuations, thus captures both the evolution of the double occupancy and the resulting local moment formation in the paramagnetic phase. As a consequence, the DMFT approximation is found to be very accurate in the Dirac semi-metallic phase where local moment formation is present and the spin correlation length small. However, in the vicinity of the fermion quantum critical point the spin correlation length diverges and the spontaneous SU(2) symmetry breaking leads to low-lying Goldstone modes in the magnetically ordered phase. The impact of these spin fluctuations on the single-particle spectral function -- \textit{waterfall} features and narrow spin-polaron bands -- is only visible in the lattice QMC approach.
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Submitted 6 March, 2020; v1 submitted 12 August, 2019;
originally announced August 2019.
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Determination of intrinsic dam** of perpendicularly magnetized ultrathin films from time resolved precessional magnetization measurements
Authors:
Amir Capua,
See-hun Yang,
Timothy Phung,
Stuart S. P. Parkin
Abstract:
Magnetization dynamics are strongly influenced by dam**. An effective dam** constant αeff is often determined experimentally from the spectral linewidth of the free induction decay of the magnetization after the system is excited to its non-equilibrium state. Such an αeff, however, reflects both intrinsic dam** as well as inhomogeneous broadening. In this paper we compare measurements of the…
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Magnetization dynamics are strongly influenced by dam**. An effective dam** constant αeff is often determined experimentally from the spectral linewidth of the free induction decay of the magnetization after the system is excited to its non-equilibrium state. Such an αeff, however, reflects both intrinsic dam** as well as inhomogeneous broadening. In this paper we compare measurements of the magnetization dynamics in ultrathin non-epitaxial films having perpendicular magnetic anisotropy using two different techniques, time-resolved magneto optical Kerr effect (TRMOKE) and hybrid optical-electrical ferromagnetic resonance (OFMR). By using an external magnetic field that is applied at very small angles to the film plane in the TRMOKE studies, we develop an explicit closed-form analytical expression for the TRMOKE spectral linewidth and show how this can be used to reliably extract the intrinsic Gilbert dam** constant. The dam** constant determined in this way is in excellent agreement with that determined from the OFMR method on the same samples. Our studies indicate that the asymptotic high-field approach that is often used in the TRMOKE method to distinguish the intrinsic dam** from the effective dam** may result in significant error, because such high external magnetic fields are required to make this approach valid that they are out of reach. The error becomes larger the lower is the intrinsic dam** constant, and thus may account for the anomalously high dam** constants that are often reported in TRMOKE studies. In conventional ferromagnetic resonance (FMR) studies, inhomogeneous contributions can be readily distinguished from intrinsic dam** contributions from the magnetic field dependence of the FMR linewidth. Using the analogous approach, we show how reliable values of the intrinsic dam** can be extracted from TRMOKE.
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Submitted 15 November, 2015;
originally announced November 2015.
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Giant thermal spin torque assisted magnetic tunnel junction switching
Authors:
Aakash Pushp,
Timothy Phung,
Charles Rettner,
Brian P. Hughes,
See-Hun Yang,
Stuart S. P. Parkin
Abstract:
Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal spin torques (TSTs) have been proposed, but so far these TSTs have not been large…
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Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal spin torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.
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Submitted 11 June, 2015;
originally announced June 2015.
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Domain wall trajectory determined by its fractional topological edge defects
Authors:
Aakash Pushp,
Timothy Phung,
Charles Rettner,
Brian P. Hughes,
See-Hun Yang,
Luc Thomas,
Stuart S. P. Parkin
Abstract:
A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW. Here we show how we can understand and control the trajectory of DWs in magnetic branched networks, composed of connected nanowires, by considering their fractiona…
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A domain wall (DW) in a ferromagnetic nanowire is composed of elementary topological bulk and edge defects with integer and fractional winding numbers, respectively, whose relative spatial arrangement determines the chirality of the DW. Here we show how we can understand and control the trajectory of DWs in magnetic branched networks, composed of connected nanowires, by considering their fractional elementary topological defects and how they interact with those innate to the network. We first develop a highly reliable mechanism for the injection of a DW of a given chirality into a nanowire and show that its chirality determines which branch the DW follows at a symmetric Y-shaped magnetic junction - the fundamental building block of the network. Using these concepts, we unravel the origin of the one-dimensional nature of magnetization reversal of connected artificial spin ice systems that have been observed in the form of Dirac strings.
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Submitted 6 August, 2013;
originally announced August 2013.
