Showing 1–1 of 1 results for author: Phan, T L
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Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant
Authors:
Seok Joon Yun,
Dinh Loc Duong,
Manh-Ha Doan,
Kirandeep Singh,
Thanh Luan Phan,
Wooseon Choi,
Young-Min Kim,
Young Hee Lee
Abstract:
Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manif…
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Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-do** concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.
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Submitted 19 January, 2020; v1 submitted 17 June, 2018;
originally announced June 2018.
