Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
Authors:
Przemyslaw Wojciech Swatek,
Xudong Hang,
Yihong Fan,
Wei Jiang,
Hwanhui Yun,
Deyuan Lyu,
Delin Zhang,
Thomas J. Peterson,
Protyush Sahu,
Onri Jay Benally,
Zach Cresswell,
**ming Liu,
Rabindra Pahari,
Daniel Kukla,
Tony Low,
K. Andre Mkhoyan,
Jian-** Wang
Abstract:
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pum** measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 la…
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In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pum** measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pum** measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.
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Submitted 29 July, 2022; v1 submitted 18 July, 2022;
originally announced July 2022.
Large field-like torque in amorphous Ru2Sn3 originated from the intrinsic spin Hall effect
Authors:
Thomas J. Peterson,
Mahendra DC,
Yihong Fan,
Junyang Chen,
Delin Zhang,
Hongshi Li,
Przemyslaw Swatek,
Javier Garcia-Barriocanal,
Jian-** Wang
Abstract:
We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature dam**-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) f…
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We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature dam**-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) films respectively, by utilizing the second harmonic Hall technique. The large field-like torque in the relatively thicker Ru2Sn3 (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant dam**-like and negligible field-like torques. Additionally, the observed room temperature field-like torque efficiency in Ru2Sn3 (10 nm)/CoFeB (5 nm) is up to three times larger than the dam**-like torque (-0.20 +- 0.009 and 0.07 +- 0.012, respectively) and thirty times larger at 50 K (-0.29 +- 0.014 and 0.009 +- 0.017, respectively). The temperature dependence of the field-like torques show dominant contributions from the intrinsic spin Hall effect while the dam**-like torques show dominate contributions from the extrinsic spin Hall effects, skew scattering and side jump. Through macro-spin calculations, we found that including field-like torques on the order or larger than the dam**-like torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer.
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Submitted 4 March, 2021; v1 submitted 14 September, 2020;
originally announced September 2020.
