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Wave packet scattering in porous planar semiconductor channel
Authors:
D. S. Lopes,
A. A. de Sousa,
J. S. de Sousa,
D. R. da Costa,
T. A. S. Pereira
Abstract:
In this work, we investigate the dynamics of the wave packet traveling through a porous semiconductor channel, with the defects being simulated by a disordered scattering region produced by obstruction potentials. The theoretical framework is based on the $split-operator$ technique to solve the time-dependent Schr$ö$dinger equation within the effective mass approximation. In our simulation, we con…
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In this work, we investigate the dynamics of the wave packet traveling through a porous semiconductor channel, with the defects being simulated by a disordered scattering region produced by obstruction potentials. The theoretical framework is based on the $split-operator$ technique to solve the time-dependent Schr$ö$dinger equation within the effective mass approximation. In our simulation, we consider the semiconductor channel made by InGaAs with a width of 100 angstrom, growth on an InAlAs substrate, and the porous ones with circular symmetry and different densities. The results for the current probability density and reflection, and transmission coefficients are analyzed for different initial values of the kinetic energy of the Gaussian wave packet, disordered pore densities, and pore randomness.
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Submitted 14 June, 2023; v1 submitted 10 June, 2023;
originally announced June 2023.
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Tunable properties of excitons in double monolayer semiconductor heterostructures
Authors:
Luiz G. M. Tenório,
Teldo A. S. Pereira,
K. Mohseni,
T. Frederico,
M. R. Hadizadeh,
Diego R. da Costa,
André J. Chaves
Abstract:
We studied the exciton properties in double layers of transition metal dichalcogenides (TMDs) with a dielectric spacer between the layers. We developed a method based on an expansion of Chebyshev polynomials to solve the Wannier equation for the exciton. Corrections to the quasiparticle bandgap due to the dielectric environment were also included via the exchange self-energy calculated within a co…
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We studied the exciton properties in double layers of transition metal dichalcogenides (TMDs) with a dielectric spacer between the layers. We developed a method based on an expansion of Chebyshev polynomials to solve the Wannier equation for the exciton. Corrections to the quasiparticle bandgap due to the dielectric environment were also included via the exchange self-energy calculated within a continuum model. We systematically investigated hetero double-layer systems for TMDs with chemical compounds MX2, showing the dependence of the inter- and intralayer excitons binding energies as a function of the spacer width and the dielectric constant. Moreover, we discussed how the exciton energy and its wave function, which includes the effects of the changing bandgap, depend on the geometric system setup.
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Submitted 5 May, 2023;
originally announced May 2023.
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Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder
Authors:
L. Craco,
S. S. Carara,
E. da Silva Barboza,
T. A. S. Pereira,
M. V. Milosevic
Abstract:
Ab initio density functional theory (DFT) and DFT plus coherent potential approximation (DFT+CPA) are employed to reveal, respectively, the effect of in-plane strain and site-diagonal disorder on the electronic structure of cubic boron arsenide (BAs). It is demonstrated that tensile strain and static diagonal disorder both reduce the semiconducting one-particle band gap of BAs, and a V-shaped p-ba…
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Ab initio density functional theory (DFT) and DFT plus coherent potential approximation (DFT+CPA) are employed to reveal, respectively, the effect of in-plane strain and site-diagonal disorder on the electronic structure of cubic boron arsenide (BAs). It is demonstrated that tensile strain and static diagonal disorder both reduce the semiconducting one-particle band gap of BAs, and a V-shaped p-band electronic state emerges -- enabling advanced valleytronics based on strained and disordered semiconducting bulk crystals. At biaxial tensile strains close to 15% the valence band lineshape relevant for optoelectronics is shown to coincide with one reported for GaAs at low energies. The role played by static disorder on the As sites is to promote p-type conductivity in the unstrained BAs bulk crystal, consistent with experimental observations. These findings illuminate the intricate and interdependent changes in crystal structure and lattice disorder on the electronic degrees of freedom of semiconductors and semimetals.
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Submitted 18 December, 2022;
originally announced December 2022.
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Giant optical nonlinearity cancellation in quantum wells
Authors:
S. Houver,
A. Lebreton,
T. A. S. Pereira,
G. Xu,
R. Colombelli,
I. Kundu,
L. H. Li,
E. H. Linfield,
A. G. Davies,
J. Mangeney,
J. Tignon,
R. Ferreira,
S. S. Dhillon
Abstract:
Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their explo…
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Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.
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Submitted 4 January, 2019;
originally announced January 2019.
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Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells
Authors:
T. A. S. Pereira,
A. A. Sousa,
M. H. Degani,
G. A. Farias
Abstract:
In this work we investigate electron-impurity binding energy in GaN/HfO$_2$ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron-impurity and (iii) the interactions among electron and impurity image…
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In this work we investigate electron-impurity binding energy in GaN/HfO$_2$ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron-impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron-impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO$_2$ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.
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Submitted 15 October, 2014;
originally announced October 2014.
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Interfacial confinement in core-shell nanowires due to high dielectric mismatch
Authors:
A. A. Sousa,
T. A. S. Pereira,
A. Chaves,
J. S. de Sousa,
G. A. Farias
Abstract:
We theoretically investigate the role of the dielectric mismatch between materials on the energy levels and recombination energies of a core-shell nanowire. Our results demonstrate that when the dielectric constant of the core material is lower than that of the shell material, the self-image potential pushes the charge carriers towards the core-shell interface, in such a way that the ideal confine…
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We theoretically investigate the role of the dielectric mismatch between materials on the energy levels and recombination energies of a core-shell nanowire. Our results demonstrate that when the dielectric constant of the core material is lower than that of the shell material, the self-image potential pushes the charge carriers towards the core-shell interface, in such a way that the ideal confinement model is no longer suitable. The effects of this interfacial confinement on the electronic properties of such wires, as well as on its response to applied magnetic fields, are discussed.
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Submitted 12 September, 2012;
originally announced September 2012.
