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Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect
Authors:
**gyue Wang,
Junwei Huang,
Daniel Kaplan,
Xuehan Zhou,
Congwei Tan,
**g Zhang,
Gangjian **,
Xuzhong Cong,
Yongchao Zhu,
Xiaoyin Gao,
Yan Liang,
Huakun Zuo,
Zengwei Zhu,
Ruixue Zhu,
Ady Stern,
Hongtao Liu,
Peng Gao,
Binghai Yan,
Hongtao Yuan,
Hailin Peng
Abstract:
In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, w…
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In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on ab initio band structures of Bi2O2Se thin films, we can ascribe the absence of odd-integer states in thicker films to the hidden Rasbha effect, where the local inversion symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one unit cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.
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Submitted 28 June, 2024; v1 submitted 31 March, 2024;
originally announced April 2024.
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Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators
Authors:
Hong-Mao Peng,
Zhan Wang,
Long Zhang
Abstract:
The interplay of band topology and electron interactions can lead to novel quantum states of matter. In this work, we theoretically study the quantum spin Hall insulator (QSHI) in a perpendicular magnetic field. In the noninteracting case, the QSHI with space inversion and uniaxial spin rotation symmetries undergoes a topological transition into a normal insulator phase at a critical magnetic fiel…
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The interplay of band topology and electron interactions can lead to novel quantum states of matter. In this work, we theoretically study the quantum spin Hall insulator (QSHI) in a perpendicular magnetic field. In the noninteracting case, the QSHI with space inversion and uniaxial spin rotation symmetries undergoes a topological transition into a normal insulator phase at a critical magnetic field $B_{\mathrm{c}}$. The exciton condensation in the lowest Landau levels is triggered by Coulomb interactions in the vicinity of $B_{\mathrm{c}}$ and spontaneously breaks the inversion and the spin rotation symmetries. We propose that the electron spin resonance spectroscopy can directly probe the exciton condensation order. Our results should apply to the InAs/GaSb quantum wells and other QSHIs.
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Submitted 7 March, 2024;
originally announced March 2024.
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Square Moiré Superlattices in Twisted Two-Dimensional Halide Perovskites
Authors:
Shuchen Zhang,
Linrui **,
Yuan Lu,
Linghai Zhang,
Jiaqi Yang,
Qiuchen Zhao,
Dewei Sun,
Joshua J. P. Thompson,
Biao Yuan,
Ke Ma,
Akriti,
Jee Yung Park,
Yoon Ho Lee,
Zitang Wei,
Blake P. Finkenauer,
Daria D. Blach,
Sarath Kumar,
Hailin Peng,
Arun Mannodi-Kanakkithodi,
Yi Yu,
Ermin Malic,
Gang Lu,
Letian Dou,
Libai Huang
Abstract:
Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly v…
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Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional (2D) materials. Here we introduce moiré superlattices leveraging ultra-thin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10°. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically forecasted flat band. This work illustrates the potential of extended ionic interaction in realizing moiré physics at room temperature, broadening the horizon for future investigations.
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Submitted 27 December, 2023;
originally announced December 2023.
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Quasi-phase-matched up- and down-conversion in periodically poled layered semiconductors
Authors:
Chiara Trovatello,
Carino Ferrante,
Birui Yang,
Josip Bajo,
Benjamin Braun,
Xinyi Xu,
Zhi Hao Peng,
Philipp K. Jenke,
Andrew Ye,
Milan Delor,
D. N. Basov,
Jiwoong Park,
Philip Walther,
Lee A. Rozema,
Cory Dean,
Andrea Marini,
Giulio Cerullo,
P. James Schuck
Abstract:
Nonlinear optics lies at the heart of classical and quantum light generation. The invention of periodic poling revolutionized nonlinear optics and its commercial applications by enabling robust quasi-phase-matching in crystals such as lithium niobate. However, reaching useful frequency conversion efficiencies requires macroscopic dimensions, limiting further technology development and integration.…
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Nonlinear optics lies at the heart of classical and quantum light generation. The invention of periodic poling revolutionized nonlinear optics and its commercial applications by enabling robust quasi-phase-matching in crystals such as lithium niobate. However, reaching useful frequency conversion efficiencies requires macroscopic dimensions, limiting further technology development and integration. Here we realize a periodically poled van der Waals semiconductor (3R-MoS$_2$). Due to its exceptional nonlinearity, we achieve macroscopic frequency conversion efficiency over a microscopic thickness of only 1.2$μ$m, $10-100\times$ thinner than current systems with similar performances. Due to unique intrinsic cavity effects, the thickness-dependent quasi-phase-matched second harmonic signal surpasses the usual quadratic enhancement by $50\%$. Further, we report the broadband generation of photon pairs at telecom wavelengths via quasi-phase-matched spontaneous parametric down-conversion. This work opens the new and unexplored field of phase-matched nonlinear optics with microscopic van der Waals crystals, unlocking applications that require simple, ultra-compact technologies such as on-chip entangled photon-pair sources for integrated quantum circuitry and sensing.
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Submitted 31 December, 2023; v1 submitted 8 December, 2023;
originally announced December 2023.
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Emergence of 2000-times higher-mobility carriers through photocarrier screening in correlated kagome magnet Mn$_3$Sn
Authors:
Takuya Matsuda,
Tomoya Higo,
Kenta Kuroda,
Takashi Koretsune,
Natsuki Kanda,
Yoshua Hirai,
Hanyi Peng,
Takumi Matsuo,
Cedric Bareille,
Naotaka Yoshikawa,
Jun Yoshinobu,
Takeshi Kondo,
Ryo Shimano,
Satoru Nakatsuji,
Ryusuke Matsunaga
Abstract:
We study extremely nonequilibrium transport in correlated kagome magnet Mn$_3$Sn by time-resolved terahertz Faraday rotation spectroscopy. When the photoinjected carrier density exceeds $\sim$10$^{20}$ cm$^{-3}$, a cyclotron resonance is clearly observed, signifying the emergence of unusual carriers with 2000-times higher mobility than those in equilibrium. The result can be attributed to a drasti…
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We study extremely nonequilibrium transport in correlated kagome magnet Mn$_3$Sn by time-resolved terahertz Faraday rotation spectroscopy. When the photoinjected carrier density exceeds $\sim$10$^{20}$ cm$^{-3}$, a cyclotron resonance is clearly observed, signifying the emergence of unusual carriers with 2000-times higher mobility than those in equilibrium. The result can be attributed to a drastic change in the band structure owing to screening of the electron correlation, highlighting the significant role of many-body effects in this kagome compound in equilibrium. Our study opens up a new phase of transport properties in correlated kagome materials under highly nonequilibrium conditions.
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Submitted 20 November, 2023;
originally announced November 2023.
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Reply to: Low-frequency quantum oscillations in LaRhIn$_5$: Dirac point or nodal line?
Authors:
Chunyu Guo,
A. Alexandradinata,
Carsten Putzke,
Amelia Estry,
Teng Tu,
Nitesh Kumar,
Feng-Ren Fan,
Shengnan Zhang,
Quansheng Wu,
Oleg V. Yazyev,
Kent R. Shirer,
Maja D. Bachmann,
Hailin Peng,
Eric D. Bauer,
Filip Ronning,
Yan Sun,
Chandra Shekhar,
Claudia Felser,
Philip J. W. Moll
Abstract:
We thank G.P. Mikitik and Yu.V. Sharlai for contributing this note and the cordial exchange about it. First and foremost, we note that the aim of our paper is to report a methodology to diagnose topological (semi)metals using magnetic quantum oscillations. Thus far, such diagnosis has been based on the phase offset of quantum oscillations, which is extracted from a "Landau fan plot". A thorough an…
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We thank G.P. Mikitik and Yu.V. Sharlai for contributing this note and the cordial exchange about it. First and foremost, we note that the aim of our paper is to report a methodology to diagnose topological (semi)metals using magnetic quantum oscillations. Thus far, such diagnosis has been based on the phase offset of quantum oscillations, which is extracted from a "Landau fan plot". A thorough analysis of the Onsager-Lifshitz-Roth quantization rules has shown that the famous $π$-phase shift can equally well arise from orbital- or spin magnetic moments in topologically trivial systems with strong spin-orbit coupling or small effective masses. Therefore, the "Landau fan plot" does not by itself constitute a proof of a topologically nontrivial Fermi surface. In the paper at hand, we report an improved analysis method that exploits the strong energy-dependence of the effective mass in linearly dispersing bands. This leads to a characteristic temperature dependence of the oscillation frequency which is a strong indicator of nontrivial topology, even for multi-band metals with complex Fermi surfaces. Three materials, Cd$_3$As$_2$, Bi$_2$O$_2$Se and LaRhIn$_5$ served as test cases for this method. Linear band dispersions were detected for Cd$_3$As$_2$, as well as the $F$ $\approx$ 7 T pocket in LaRhIn$_5$.
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Submitted 12 March, 2023;
originally announced March 2023.
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Statistical Fluid Mechanics: Dynamics Equations and Linear Response Theory
Authors:
Haibing Peng
Abstract:
The statistical nature of discrete fluid molecules with random thermal motion so far has not been considered in mainstream fluid mechanics based on Navier-Stokes equations, wherein fluids have been treated as a continuum breaking into many macroscopically infinitely small (but microscopically large enough) mass elements with their motion only characterized by center-of-mass velocity. Here we provi…
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The statistical nature of discrete fluid molecules with random thermal motion so far has not been considered in mainstream fluid mechanics based on Navier-Stokes equations, wherein fluids have been treated as a continuum breaking into many macroscopically infinitely small (but microscopically large enough) mass elements with their motion only characterized by center-of-mass velocity. Here we provide a Statistical Mechanical approach to address fluid dynamics by considering statistical velocity distribution of discrete molecules within macroscopically infinitely small volume elements as well as their center-of-mass velocity. Dynamics equations governing the evolution of physical variables have been proposed, Green's functions have been obtained and linear response theory has been applied to study physical situations with external heat perturbation. It is found that the propagation of heat, center-of-mass motion and sound are intrinsically integrated in Statistical fluid dynamics. This work lays down the foundation for applications of Statistical fluid mechanics.
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Submitted 14 July, 2023; v1 submitted 5 March, 2023;
originally announced March 2023.
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A Method for Evaluation of Aerodynamic Lift and Drag Based on Statistical Mechanics
Authors:
Haibing Peng
Abstract:
Despite intensive applications of Navier-Stokes equations in computational-fluid-dynamics (CFD) to understand aerodynamics, fundamental questions remain open since the statistical nature of discrete air molecules with random thermal motion is not considered in CFD. Here we introduce an approach based on Statistical Mechanics, termed as "Volume-Element" method, for numerical evaluation of aerodynam…
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Despite intensive applications of Navier-Stokes equations in computational-fluid-dynamics (CFD) to understand aerodynamics, fundamental questions remain open since the statistical nature of discrete air molecules with random thermal motion is not considered in CFD. Here we introduce an approach based on Statistical Mechanics, termed as "Volume-Element" method, for numerical evaluation of aerodynamic lift and drag. Pressure and friction as a function of angle of attack have been obtained for canonical flat-plate airfoils, and the method is applicable to convex-shape airfoils directly and viable for concave-shape airfoils if combined with Monte Carlo simulations. This approach opens a door not only for aerodynamic applications, but also for further applications in Boson or Fermi gases.
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Submitted 25 April, 2023; v1 submitted 9 February, 2023;
originally announced February 2023.
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Effective manipulation and realization of a colossal nonlinear Hall effect in an electric-field tunable moiré system
Authors:
**rui Zhong,
Junxi Duan,
Shihao Zhang,
Huimin Peng,
Qi Feng,
Yuqin Hu,
Qinsheng Wang,
**hai Mao,
Jianpeng Liu,
Yugui Yao
Abstract:
The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from both the Berry curvature dipole and the chiral Bloch electron skew scatterings, reflecting various information of the lattice symmetries, band dispersions, and t…
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The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from both the Berry curvature dipole and the chiral Bloch electron skew scatterings, reflecting various information of the lattice symmetries, band dispersions, and topology of the electron wavefunctions. Even though many efforts have been put in detecting the nonlinear Hall effect in diverse condensed matter systems, effective manipulation of the two principal mechanisms in a single system has been lacking, and the reported response is relatively weak. Here, we report effective manipulation of the nonlinear Hall effect and realization of a colossal second-order Hall conductivity, $\sim500 μmSV^{-1}$, orders of magnitudes higher than the reported values, in AB-BA stacked twisted double bilayer graphene. A Berry-curvature-dipole-dominated nonlinear Hall effect, as well as its controllable transition to skew-scattering-dominated response, is identified near the band edge. The colossal response, on the other hand, is detected near the van Hove singularities, mainly determined by the skew scattering of the chiral Bloch electrons. Our findings establish electrically tunable moiré systems promising for nonlinear Hall effect manipulations and applications.
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Submitted 28 January, 2023;
originally announced January 2023.
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Hydrogen isotope separation using graphene-based membranes in liquid water
Authors:
Xiangrui Zhang,
Hequn Wang,
Tiantian Xiao,
Xiaoyi Chen,
Wen Li,
Yihan Xu,
Jianlong Lin,
Zhe Wang,
Hailin Peng,
Sheng Zhang
Abstract:
Hydrogen isotope separation has been effectively achieved using gaseous H2/D2 filtered through graphene/Nafion composite membranes. Nevertheless, deuteron nearly does not exist in the form of gaseous D2 in nature but in liquid water. Thus, it is a more feasible way to separate and enrich deuterium from water. Herein we have successfully transferred monolayer graphene to a rigid and porous polymer…
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Hydrogen isotope separation has been effectively achieved using gaseous H2/D2 filtered through graphene/Nafion composite membranes. Nevertheless, deuteron nearly does not exist in the form of gaseous D2 in nature but in liquid water. Thus, it is a more feasible way to separate and enrich deuterium from water. Herein we have successfully transferred monolayer graphene to a rigid and porous polymer substrate PITEM (polyimide tracked film), which could avoid the swelling problem of the Nafion substrate, as well as keep the integrity of graphene. Meanwhile, defects in large area of CVD graphene could be successfully repaired by interfacial polymerization resulting in high separation factor. Moreover, a new model was proposed for the proton transport mechanism through monolayer graphene based on the kinetic isotope effect (KIE). In this model, graphene plays the significant role in the H/D separation process by completely breaking the O-H/O-D bond, which can maximize the KIE leading to prompted H/D separation performance. This work suggests a promising application of using monolayer graphene in industry and proposes a pronounced understanding of proton transport in graphene
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Submitted 25 December, 2022;
originally announced December 2022.
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Beyond steric selectivity of ions using angstrom-scale capillaries
Authors:
Solleti Goutham,
Ashok Keerthi,
Abdulghani Ismail,
Ankit Bhardwaj,
Hossein Jalali,
Yi You,
Yiheng Li,
Nassim Hassani,
Haoke Peng,
Marcos Vinicius Surmani Martins,
Fengchao Wang,
Mehdi Neek-Amal,
Boya Radha
Abstract:
Ion-selective channels play a key role in physiological processes and are used in many technologies. While biological channels can efficiently separate same-charge ions with similar hydration shells, it remains a challenge to mimic such exquisite selectivity using artificial solid-state channels. Although, there are several nanoporous membranes that show high selectivity with respect to certain io…
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Ion-selective channels play a key role in physiological processes and are used in many technologies. While biological channels can efficiently separate same-charge ions with similar hydration shells, it remains a challenge to mimic such exquisite selectivity using artificial solid-state channels. Although, there are several nanoporous membranes that show high selectivity with respect to certain ions, the underlying mechanisms are based on the hydrated ion size and/or charge. There is a need to rationalize the design of artificial channels to make them capable of selecting between similar-size same-charge ions, which in turn requires understanding of why and how such selectivity can occur. To address this issue, we study angstrom-scale artificial channels made by van der Waals assembly, which are comparable in size with typical ions and carry little residual charge on channel walls. This allows us to exclude the first-order effects of steric and Coulomb-based exclusion. We show that the studied two-dimensional angstrom-scale capillaries can distinguish between same-charge ions with similar hydrated diameters. The selectivity is attributed to different positions occupied by ions within the layered structure of nanoconfined water, which depend on the ion-core size and differ for anions and cations. The revealed mechanism points at possibilities of ion separation beyond the simple steric sieving.
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Submitted 28 February, 2023; v1 submitted 19 December, 2022;
originally announced December 2022.
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Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling
Authors:
Kui Zhao,
Huaiyuan Liu,
Congwei Tan,
Jianfei Xiao,
Jie Shen,
Guangtong Liu,
Hailin Peng,
Li Lu,
Fanming Qu
Abstract:
Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime…
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Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime where conductance plateaus were observed. When further increasing the electron density by increasing Vg, we entered the phase coherent regime and weak antilocalization (WAL) was observed. The spin relaxation length extracted from the WAL was found to be gate tunable, ranging from ~100 nm to ~250 nm and reaching a stronger spin-obit coupling (SOC) than the two-dimensional counterpart (flakes). We attribute the strong SOC and the gate tunability to the presence of a surface accumulation layer which induces a strong inversion asymmetry on the surface. Such scenario was supported by the observation of two Shubnikov-de Haas oscillation frequencies that correspond to two types of carriers, one on the surface, and the other in the bulk. The high-quality Bi2O2Se nanowires with a high mobility and a strong SOC can act as a very prospective material in future spintronics.
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Submitted 21 December, 2022; v1 submitted 7 September, 2022;
originally announced September 2022.
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Ultrafast coherent interlayer phonon dynamics in atomically thin layers of MnBi2Te4
Authors:
F. Michael Bartram,
Yu-Chen Leng,
Yongchao Wang,
Liangyang Liu,
Xue Chen,
Huining Peng,
Hao Li,
Pu Yu,
Yang Wu,
Miao-Ling Lin,
**song Zhang,
**-Heng Tan,
Luyi Yang
Abstract:
The atomically thin MnBi2Te4 crystal is a novel magnetic topological insulator, exhibiting exotic quantum physics. Here we report a systematic investigation of ultrafast carrier dynamics and coherent interlayer phonons in few-layer MnBi2Te4 as a function of layer number using time-resolved pump-probe reflectivity spectroscopy. Pronounced coherent phonon oscillations from the interlayer breathing m…
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The atomically thin MnBi2Te4 crystal is a novel magnetic topological insulator, exhibiting exotic quantum physics. Here we report a systematic investigation of ultrafast carrier dynamics and coherent interlayer phonons in few-layer MnBi2Te4 as a function of layer number using time-resolved pump-probe reflectivity spectroscopy. Pronounced coherent phonon oscillations from the interlayer breathing mode are directly observed in the time domain. We find that the coherent oscillation frequency, the photocarrier and coherent phonon decay rates all depend sensitively on the sample thickness. The time-resolved measurements are complemented by ultralow-frequency Raman spectroscopy measurements, which both confirm the interlayer breathing mode and additionally enable observation of the interlayer shear mode. The layer dependence of these modes allows us to extract both the out-of-plane and in-plane interlayer force constants. Our studies not only reveal the interlayer van der Waals coupling strengths, but also shed light on the ultrafast optical properties of this novel two-dimensional material.
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Submitted 14 July, 2022;
originally announced July 2022.
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Ultrafast Dynamics of Intrinsic Anomalous Hall Effect in the Topological Antiferromagnet Mn3Sn
Authors:
Takuya Matsuda,
Tomoya Higo,
Takashi Koretsune,
Natsuki Kanda,
Yoshua Hirai,
Hanyi Peng,
Takumi Matsuo,
Naotaka Yoshikawa,
Ryo Shimano,
Satoru Nakatsuji,
Ryusuke Matsunaga
Abstract:
We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn3Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz probe pulses clearly resolves ultrafast suppression of the AHE before demagnetization. The result is well reproduced by microscopic calculation of the intrinsic Be…
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We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn3Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz probe pulses clearly resolves ultrafast suppression of the AHE before demagnetization. The result is well reproduced by microscopic calculation of the intrinsic Berry-curvature mechanism while the extrinsic contribution is clearly excluded. Our work opens a new avenue for the study of nonequilibrium AHE to identify the microscopic origin by drastic control of the electron temperature by light.
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Submitted 21 March, 2023; v1 submitted 14 June, 2022;
originally announced June 2022.
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Atomic-scale Deformation Process of Glasses Unveiled by Stress-induced Structural Anisotropy
Authors:
Jie Dong,
Hailong Peng,
Hui Wang,
Yang Tong,
Yutian Wang,
Wojciech Dmowski,
Baoan Sun,
Takeshi Egami,
Weihua Wang,
Haiyang Bai
Abstract:
Experimentally resolving atomic-scale structural changes of a deformed glass remains challenging owing to the disordered nature of glass structure. Here, we show that the structural anisotropy emerges as a general hallmark for different types of glasses (metallic glasses, oxide glass, amorphous selenium, and polymer glass) after thermo-mechanical deformation, and it is highly correlates with local…
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Experimentally resolving atomic-scale structural changes of a deformed glass remains challenging owing to the disordered nature of glass structure. Here, we show that the structural anisotropy emerges as a general hallmark for different types of glasses (metallic glasses, oxide glass, amorphous selenium, and polymer glass) after thermo-mechanical deformation, and it is highly correlates with local nonaffine atomic displacements detected by the high-energy X-ray diffraction technique. By analyzing the anisotropic pair density function, we unveil the atomic-level mechanism responsible for the plastic flow, which notably differs between metallic glasses and covalent glasses. The structural rearrangements in metallic glasses are mediated through cutting and formation of atomic bonds, which occurs in some localized inelastic regions embedded in elastic matrix, whereas that of covalent glasses is mediated through the rotation of atomic bonds or chains without bond length change, which occurs in a less localized manner.
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Submitted 28 May, 2022;
originally announced May 2022.
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Direct observation of local antiferroelectricity induced phonon softening at a SrTiO3 defect
Authors:
Bo Han,
Ruochen Shi,
Huining Peng,
Yingjie Lv,
Ruishi Qi,
Yuehui Li,
**gmin Zhang,
**long Du,
Pu Yu,
Peng Gao
Abstract:
Defects in oxides usually exhibit exotic properties that may be associated with the local lattice dynamics. Here, at atomic spatial resolution, we directly measure phonon modes of an antiphase boundary (APB) in SrTiO3 freestanding membrane and correlate them with the picometer-level structural distortion. We find that the SrTiO3 APB introduces new defect phonon modes that are absent in bulk SrTiO3…
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Defects in oxides usually exhibit exotic properties that may be associated with the local lattice dynamics. Here, at atomic spatial resolution, we directly measure phonon modes of an antiphase boundary (APB) in SrTiO3 freestanding membrane and correlate them with the picometer-level structural distortion. We find that the SrTiO3 APB introduces new defect phonon modes that are absent in bulk SrTiO3. These modes are highly sensitive to the subtle structure distortion, i.e., the SrTiO3 APB generates the local electric dipoles forming an antiferroelectric configuration, which significantly softens the transverse optical (TO) and longitudinal optical (LO) modes at Γ point. Correlating the local phonons with the subtle structural distortion, our findings provide valuable insights into understanding the defect properties in complex oxides and essential information for their applications such as thermoelectric devices.
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Submitted 3 March, 2022;
originally announced March 2022.
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Resonance Fluorescence from a two-level artificial atom strongly coupled to a single-mode cavity
Authors:
Z. H. Peng,
D. He,
Y. Zhou,
J. H. Ding,
J. Lu,
L. Zhou,
J. Q. Liao,
L. M. Kuang,
Yu-xi Liu,
Oleg V. Astafiev,
J. S. Tsai
Abstract:
We experimentally demonstrate the resonance fluorescence of a two-level artificial atom strongly coupled to a single-mode cavity field. The effect was theoretically predicted thirty years ago by Savage [Phys. Rev. Lett. 63, 1376 (1989)]. The system consists of a superconducting qubit circuit and a one-dimensional transmission line resonator. In addition, a one-dimensional transmission line strongl…
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We experimentally demonstrate the resonance fluorescence of a two-level artificial atom strongly coupled to a single-mode cavity field. The effect was theoretically predicted thirty years ago by Savage [Phys. Rev. Lett. 63, 1376 (1989)]. The system consists of a superconducting qubit circuit and a one-dimensional transmission line resonator. In addition, a one-dimensional transmission line strongly coupled to the atom serves as an open space. The effect takes place, when a microwave field is applied to the cavity, which in turn is resonantly coupled to the atom. The fluorescence spectrum is measured via the emission into the transmission line. We find that the central peak is determined by the atom spontaneous emission to the open space and the widths of side peaks are largely determined by the coherent interaction between the atom and the cavity, that is, the fluorescence spectrum here is very different from that of the Mollow triplet. We also derive analytical form for the spectrum. Our experimental results agree well with theoretical calculations.
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Submitted 12 April, 2023; v1 submitted 24 February, 2022;
originally announced February 2022.
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Surface-bulk coupling in a Bi$_2$Te$_3$ nanoplate grown by van der Waals epitaxy
Authors:
Xiaobo Li,
Mengmeng Meng,
Shaoyun Huang,
Congwei Tan,
Congcong Zhang,
Hailin Peng,
H. Q. Xu
Abstract:
We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the s…
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We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the sheet resistance of the device reveal that the transport carriers in the nanoplate are of n-type and that, with decreasing top gate voltage, the carrier density in the nanoplate is decreased. However, the mobility is increased with decreasing top-gate voltage. This mobility increase with decreasing carrier density in the nanoplate is demonstrated to arise from a decrease in bulk-to-surface electron scattering rate. Low-field magnetotransport measurements are performed at low temperatures. The measured magnetoconductivity of the nanoplate shows typical weak anti-localization (WAL) characteristics. We analyze the measurements by taking surface-bulk inter-channel electron scattering into account and extract dephasing times $τ_φ$, diffusion coefficients $D$ of electrons at the top surface and in the bulk, and the surface-bulk scattering times $τ_{SB}$ as a function of top-gate voltage and temperature. It is found that the dephasing in the nanoplate arises dominantly from electron-electron scattering with small energy transfers. It is also found that the ratio of $τ_φ$/$τ_{SB}$ (a measure of the surface-bulk electron coherent coupling) is decreased with decreasing gate voltage or increasing temperature. We demonstrate that taking the surface-bulk coherent electron scattering in our Bi$_2$Te$_3$ nanoplate into account is essential to understand quantum transport measurements at low temperatures.
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Submitted 10 February, 2022;
originally announced February 2022.
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PH-Net: Parallelepiped Microstructure Homogenization via 3D Convolutional Neural Networks
Authors:
Hao Peng,
An Liu,
**gcheng Huang,
Lingxin Cao,
Jikai Liu,
Lin Lu
Abstract:
Microstructures are attracting academic and industrial interests with the rapid development of additive manufacturing. The numerical homogenization method has been well studied for analyzing mechanical behaviors of microstructures; however, it is too time-consuming to be applied to online computing or applications requiring high-frequency calling, e.g., topology optimization. Data-driven homogeniz…
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Microstructures are attracting academic and industrial interests with the rapid development of additive manufacturing. The numerical homogenization method has been well studied for analyzing mechanical behaviors of microstructures; however, it is too time-consuming to be applied to online computing or applications requiring high-frequency calling, e.g., topology optimization. Data-driven homogenization methods emerge as a more efficient choice but limit the microstructures into a cubic shape, which are infeasible to the periodic microstructures with a more general shape, e.g., parallelepiped. This paper introduces a fine-designed 3D convolutional neural network (CNN) for fast homogenization of parallel-shaped microstructures, named PH-Net. Superior to existing data-driven methods, PH-Net predicts the local displacements of microstructures under specified macroscope strains instead of direct homogeneous material, motivating us to present a label-free loss function based on minimal potential energy. For dataset construction, we introduce a shape-material transformation and voxel-material tensor to encode microstructure type,base material and boundary shape together as the input of PH-Net, such that it is CNN-friendly and enhances PH-Net on generalization in terms of microstructure type, base material, and boundary shape. PH-Net predicts homogenized properties with hundreds of acceleration compared to the numerical homogenization method and even supports online computing. Moreover, it does not require a labeled dataset and thus is much faster than current deep learning methods in training processing. Benefiting from predicting local displacement, PH-Net provides both homogeneous material properties and microscopic mechanical properties, e.g., strain and stress distribution, yield strength, etc. We design a group of physical experiments and verify the prediction accuracy of PH-Net.
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Submitted 22 June, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
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Giant second-order nonlinearity in twisted bilayer graphene
Authors:
Junxi Duan,
Yu Jian,
Yang Gao,
Huimin Peng,
**rui Zhong,
Qi Feng,
Yugui Yao
Abstract:
In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The s…
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In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The study of the extrinsic contribution, however, is scarce, although it can enter the NLHE even in the leading order. Here, we report a giant nonlinear transport response in TBG, in which the intrinsic mechanism is forbidden. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. The peak value of the second-order Hall conductivity close to the full filling of the moiré band reaches 8.76 $μmSV^{-1}$, four-order larger than those detected in $WTe_2$. The observed giant second-order nonlinearity can be understood from the collaboration of the asymmetric scattering of electrons off the static (Coulomb impurities) and dynamic disorders (phonons) in noncentrosymmetric crystals. It is mainly determined by the skew-scattering contribution from impurities at 1.7 K. The skew-scattering from phonons has a much larger coupling coefficient as suggested by the scaling results, and becomes as important as the impurity contribution as the temperature rises. Our observations demonstrate the potential of TBG in studying nonlinear response and possible rectification applications.
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Submitted 20 April, 2022; v1 submitted 23 January, 2022;
originally announced January 2022.
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Non-monotonic dynamic correlations beneath the surface of glass-forming liquids
Authors:
Hailong Peng,
Huashan Liu,
Thomas Voigtmann
Abstract:
Collective motion over increasing length scales is a signature of the vitrification process of liquids. We demonstrate the emergence of distinct static and dynamic length scales probed near the free surface in fully equilibrated glass-forming liquid films, and their connection to the bulk properties of the system. In contrast to a monotonically growing static correlation length, the dynamic correl…
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Collective motion over increasing length scales is a signature of the vitrification process of liquids. We demonstrate the emergence of distinct static and dynamic length scales probed near the free surface in fully equilibrated glass-forming liquid films, and their connection to the bulk properties of the system. In contrast to a monotonically growing static correlation length, the dynamic correlation length that measures the extent of surface-dynamics acceleration into the bulk, displays a striking non-monotonic temperature evolution that is robust also against changes in detailed interatomic interaction. The maximum of dynamic correlations defines a cross-over temperature $T_*$ that we show to agree with a morphological change of cooperative rearrangement regions (CRR) of fast particles in the bulk liquids. The cross-over occurs at a temperature larger than the critical temperature Tc of mode-coupling theory (MCT). We link it to the point where fast-particle motion decouples from structural relaxation that can be defined rigorously within a recent extension of MCT, the stochastic $β$-relaxation theory (SBR).
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Submitted 12 July, 2021; v1 submitted 2 July, 2021;
originally announced July 2021.
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Effect of the selective localization of carbon nanotubes and phase domain in immiscible blends on tunable microwave dielectric properties
Authors:
Li** Zhou,
Yu Tian,
Peng Xu,
Huijie Wei,
Yuhan Li,
Hua-Xin Peng,
Faxiang Qin
Abstract:
In recent years, the immiscible polymer blend system has attracted much attention as the matrix of nanocomposites. Herein, from the perspective of dynamics, the control of the carbon nanotubes (CNTs) migration aided with the interface of polystyrene (PS) and poly(methyl methacrylate) (PMMA) blends was achieved through a facile melt mixing method. Thus, we revealed a comprehensive relationship betw…
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In recent years, the immiscible polymer blend system has attracted much attention as the matrix of nanocomposites. Herein, from the perspective of dynamics, the control of the carbon nanotubes (CNTs) migration aided with the interface of polystyrene (PS) and poly(methyl methacrylate) (PMMA) blends was achieved through a facile melt mixing method. Thus, we revealed a comprehensive relationship between several typical CNTs migrating scenarios and the microwave dielectric properties of their nanocomposites. Based on the unique morphologies and phase domain structures of the immiscible matrix, we further investigated the multiple microwave dielectric relaxation processes and shed new light on the relation between relaxation peak position and the phase domain size distribution. Moreover, by integrating the CNTs interface localization control with the matrix co-continuous structure construction, we found that the interface promotes double percolation effect to achieve conductive percolation at low CNTs loading (~1.06 vol%). Overall, the present study provides a unique nanocomposite material design symphonizing both functional fillers dispersion and location as well as the matrix architecture optimization for microwave applications.
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Submitted 6 May, 2021;
originally announced May 2021.
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Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons
Authors:
Eva A. A. Pogna,
Xiaoyu Jia,
Alessandro Principi,
Alexander Block,
Luca Banszerus,
**can Zhang,
Xiaoting Liu,
Thibault Sohier,
Stiven Forti,
Karuppasamy Soundarapandian,
Bernat Terrés,
Jake D. Mehew,
Chiara Trovatello,
Camilla Coletti,
Frank H. L. Koppens,
Mischa Bonn,
Niek van Hulst,
Matthieu J. Verstraete,
Hailin Peng,
Zhongfan Liu,
Christoph Stampfer,
Giulio Cerullo,
Klaas-Jan Tielrooij
Abstract:
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif…
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Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.
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Submitted 5 March, 2021;
originally announced March 2021.
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Quantum versus Classical Regime in Circuit Quantum Acoustodynamics
Authors:
Gang-hui Zeng,
Yang Zhang,
Aleksey N. Bolgar,
Dong He,
Bin Li,
Xin-hui Ruan,
Lan Zhou,
Le-Mang Kuang,
Oleg V. Astafiev,
Yu-xi Liu,
Z. H. Peng
Abstract:
We experimentally study a circuit quantum acoustodynamics system, which consists of a superconducting artificial atom, coupled to both a two-dimensional surface acoustic wave resonator and a one-dimensional microwave transmission line. The strong coupling between the artificial atom and the acoustic wave resonator is confirmed by the observation of the vacuum Rabi splitting at the base temperature…
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We experimentally study a circuit quantum acoustodynamics system, which consists of a superconducting artificial atom, coupled to both a two-dimensional surface acoustic wave resonator and a one-dimensional microwave transmission line. The strong coupling between the artificial atom and the acoustic wave resonator is confirmed by the observation of the vacuum Rabi splitting at the base temperature of dilution refrigerator. We show that the propagation of microwave photons in the microwave transmission line can be controlled by a few phonons in the acoustic wave resonator. Furthermore, we demonstrate the temperature effect on the measurements of the Rabi splitting and temperature induced transitions from high excited dressed states. We find that the spectrum structure of two-peak for the Rabi splitting becomes into those of several peaks, and gradually disappears with the increase of the environmental temperature $T$. The quantum-to-classical transition is observed around the crossover temperature $T_{c}$, which is determined via the thermal fluctuation energy $k_{B}T$ and the characteristic energy level spacing of the coupled system. Experimental results agree well with the theoretical simulations via the master equation of the coupled system at different effective temperatures.
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Submitted 18 January, 2021; v1 submitted 10 November, 2020;
originally announced November 2020.
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Unravelling a Zigzag Pathway for Hot-Carrier Collection at CH3NH3PbI3/Graphene Interfaces
Authors:
** Zhang,
Hao Hong,
**can Zhang,
Chunchun Wu,
Hailin Peng,
Kaihui Liu,
Sheng Meng
Abstract:
The capture of photoexcited deep-band hot carriers, excited by photons with energies far above the bandgap, is of significant importance for photovoltaic and photoelectronic applications since it is directly related to the quantum efficiency of photon-to-electron conversion. By employing time-resolved photoluminescence and state-of-the-art time-domain density functional theory, we reveal that phot…
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The capture of photoexcited deep-band hot carriers, excited by photons with energies far above the bandgap, is of significant importance for photovoltaic and photoelectronic applications since it is directly related to the quantum efficiency of photon-to-electron conversion. By employing time-resolved photoluminescence and state-of-the-art time-domain density functional theory, we reveal that photoexcited hot carriers in organic-inorganic hybrid perovskites prefer a zigzag interfacial charge-transfer pathway, i.e., the hot carriers transfer back and forth between CH3NH3PbI3 and graphene, before they reach a charge separated state. Driven by quantum coherence and interlayer vibrational modes, this pathway at the semiconductor-graphene interface takes about 400 femtoseconds, much faster than the relaxation process within CH3NH3PbI3 (in several picoseconds). We further demonstrate that the transfer rate of the pathway can be further enhanced by interfacial defects. Our work provides a new insight for the fundamental understanding and precise manipulation of hot-carrier dynamics at the complex semiconductor-graphene interfaces, paving the way for highly efficient photovoltaic and photoelectric device optimization.
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Submitted 27 July, 2020;
originally announced July 2020.
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Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy
Authors:
J. J. P. Thompson,
D. Pei,
H. Peng,
H. Wang,
N. Channa,
H. L. Peng,
A. Barinov,
N. B. M. Schröter,
Y. Chen,
M. Mucha-Kruczyński
Abstract:
Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate t…
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Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate that the interatomic coupling between two two-dimensional crystals can be determined from angle-resolved photoemission spectra of a trilayer structure with one aligned and one twisted interface. Each of the interfaces provides complementary information and together they enable self-consistent determination of the coupling. We parametrize interatomic coupling for carbon atoms by studying twisted trilayer graphene and show that the result can be applied to structures with different twists and number of layers. Our approach demonstrates how to extract fundamental information about interlayer coupling in a stack of two-dimensional crystals and can be applied to many other van der Waals interfaces.
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Submitted 17 July, 2020;
originally announced July 2020.
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2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure
Authors:
Ru Xu,
Peng Chen,
Menghan Liu,
**g Zhou,
Yunfei Yang,
Yimeng Li,
Cheng Ge,
Haocheng Peng,
Bin Liu,
Zili Xie,
Rong Zhang,
Youdou Zheng
Abstract:
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained with a high uniformi…
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In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, the breakdown voltage can reach 1592 V with a high power FOM (Figure-of-Merit) of 1656 MW/cm2. For the SBD device with the anode-cathode spacing of 30 um, the breakdown voltage can be as high as 2521 V and the power FOM is 1244 MW/cm2.
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Submitted 6 July, 2020;
originally announced July 2020.
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Vertical interface enabled large tunability of scattering spectra in lightweight microwire/silicone rubber composites
Authors:
A. Uddin,
D. Estevez,
H. X. Peng,
F. X. Qin
Abstract:
Previously, we have shown the advantages of an approach based on microstructural modulation of the functional phase and topology of periodically arranged elements to program wave scattering in ferromagnetic microwire composites. However, the possibility of making full use of composite intrinsic structure was not exploited. In this work, we implement the concept of material plainification by an in-…
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Previously, we have shown the advantages of an approach based on microstructural modulation of the functional phase and topology of periodically arranged elements to program wave scattering in ferromagnetic microwire composites. However, the possibility of making full use of composite intrinsic structure was not exploited. In this work, we implement the concept of material plainification by an in-built vertical interface on randomly dispersed short-cut microwire composites allowing the adjustment of electromagnetic properties to a large extent. Such interface was modified through arranging wires of different structures in two separated regions and by enlarging or reducing these regions through wire concentration variations leading to polarization differences across the interface and hence microwave tunability. When the wire concentration was equal in both regions, two well-defined transmission windows with varied amplitude and bandwidth were generated. Wire concentration fluctuations resulted in strong scattering changes ranging from broad passbands to stopbands with pronounced transmission dips, demonstrating the intimate relationship between wire content and space charge variations at the interface. Overall, this study provides a novel method to rationally exploit interfacial effects in microwire composites. Moreover, the advantages of enabling significantly tunable scattering spectra by merely 0.053 vol. % filler loading and relatively simple structure make the proposed composite plainification strategy instrumental to designing microwave filters with broadband frequency selectivity.
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Submitted 15 April, 2020;
originally announced April 2020.
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Tunable microwave absorption performance of nitrogen and sulfur dual-doped graphene by varying do** sequence
Authors:
L. Quan,
H. T. Lu,
F. X. Qin,
D. Estevez,
Y. F. Wang,
Y. H. Li,
Y. Tian,
H. Wang,
H. X. Peng
Abstract:
Sulfur and nitrogen dual doped graphene have been extensively investigated in the field of oxygen reduction reaction, supercapacitors and batteries, but their magnetic and absorption performance have not been explored. Besides, the effects of do** sequence of sulfur and nitrogen atoms on the morphology, structural property and the corresponding microwave absorption performance of the dual doped…
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Sulfur and nitrogen dual doped graphene have been extensively investigated in the field of oxygen reduction reaction, supercapacitors and batteries, but their magnetic and absorption performance have not been explored. Besides, the effects of do** sequence of sulfur and nitrogen atoms on the morphology, structural property and the corresponding microwave absorption performance of the dual doped graphene remain unexplored. In this work, nitrogen and sulfur dual doped graphene with different do** sequence were successfully prepared using a controllable two steps facile thermal treatment method. The first do** process played a decisive role on the morphology, crystal size, interlayer distance, do** degree and ultimately magnetic and microwave absorption properties of the dual doped graphene samples. Meanwhile, the second do** step affected the do** sites and further had a repairing or damaging effect on the final doped graphene. The dual doped graphene samples exhibited two pronounced absorption peaks which intensity was decided by the order of the do** elements. This nitrogen and sulfur dual doped graphene with controlled do** order provides a strategy for understanding of the interaction between nitrogen and sulfur as dual dopants in graphene and further acquiring microwave absorbing materials with tunable absorption bands by varying the do** sequence.
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Submitted 22 March, 2020;
originally announced March 2020.
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Superconductivity in an Al-Twisted Bilayer Graphene-Al Junction device
Authors:
Dingran Rui,
Luzhao Sun,
N. Kang,
Hailin Peng,
Zhongfan Liu,
H. Q. Xu
Abstract:
We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is fabricated by contacting a piece of tBLG by two closely spaced Al electrodes in an Al-tBLG-Al Josephson junction configuration. Low-temperature transport measurements sh…
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We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is fabricated by contacting a piece of tBLG by two closely spaced Al electrodes in an Al-tBLG-Al Josephson junction configuration. Low-temperature transport measurements show that below the critical temperature of the Al electrodes ($T_c\approx1.1$ K), the device exhibits sizable supercurrents at zero magnetic field, arising from the superconducting proximity effect with high contact transparency in the device. In the measurements of the critical supercurrent as a function of perpendicularly applied magnetic field, a standard Fraunhofer-like pattern of oscillations is observed, indicating a uniform supercurrent distribution inside the junction. Multiple Andreev reflection characteristics are also observed in the spectroscopy measurements of the device, and their magnetic field and temperature dependencies are found to be well described by the Bardeen$-$Cooper$-$Schrieffer theory.
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Submitted 5 March, 2020;
originally announced March 2020.
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Realization and transport investigation of a single layer-twisted bilayer graphene junction
Authors:
Dingran Rui,
Luzhao Sun,
N. Kang,
Jiayu Li,
Li Lin,
Hailin Peng,
Zhongfan Liu,
H. Q. Xu
Abstract:
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall b…
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We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized plateaus and the appearance of these resistance plateaus can be attributed to the presence of the well-defined edge-channel transport along the SLG-tBLG junction interface. The measurements also show that the difference between the cross-junction resistances measured on the two sides of the Hall-bar provides a sensitive measure to the edge channel transport characteristics in the two graphene layers that constitute the SLG-tBLG junction and to degeneracy lifting of the Landau levels in the tBLG layer. Temperature dependent measurements of the cross-junction resistance in the quantum Hall regime are also carried out and the influence of the transverse transport of the bulk Landau levels on the edge channel transport along the SLG-tBLG junction interface are extracted. These results enrich the understanding of the charge transport across interfaces in graphene hybrid structures and open up new opportunities for probing exotic quantum phenomena in graphene devices.
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Submitted 16 April, 2020; v1 submitted 5 March, 2020;
originally announced March 2020.
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Super Resolution Convolutional Neural Network for Feature Extraction in Spectroscopic Data
Authors:
Han Peng,
Xiang Gao,
Yu He,
Yiwei Li,
Yuchen Ji,
Chuhang Liu,
Sandy A. Ekahana,
Ding Pei,
Zhongkai Liu,
Zhixun Shen,
Yulin Chen
Abstract:
Two dimensional (2D) peak finding is a common practice in data analysis for physics experiments, which is typically achieved by computing the local derivatives. However, this method is inherently unstable when the local landscape is complicated, or the signal-to-noise ratio of the data is low. In this work, we propose a new method in which the peak tracking task is formalized as an inverse problem…
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Two dimensional (2D) peak finding is a common practice in data analysis for physics experiments, which is typically achieved by computing the local derivatives. However, this method is inherently unstable when the local landscape is complicated, or the signal-to-noise ratio of the data is low. In this work, we propose a new method in which the peak tracking task is formalized as an inverse problem, thus can be solved with a convolutional neural network (CNN). In addition, we show that the underlying physics principle of the experiments can be used to generate the training data. By generalizing the trained neural network on real experimental data, we show that the CNN method can achieve comparable or better results than traditional derivative based methods. This approach can be further generalized in different physics experiments when the physical process is known.
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Submitted 29 January, 2020;
originally announced January 2020.
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Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal
Authors:
Bing Deng,
Binbin Wang,
Ning Li,
Rongtan Li,
Yani Wang,
Jilin Tang,
Qiang Fu,
Zhen Tian,
Peng Gao,
Jiamin Xue,
Hailin Peng
Abstract:
Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30° twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step gr…
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Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30° twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have the quasicrystal like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG is investigated using scanning tunneling microscopy (STM) and spectroscopy (STS). The energy-dependent local density of states (DOS) with in-situ electrostatic do** shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG, and provides insights of the electronic properties and interlayer coupling in this intriguing system.
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Submitted 26 January, 2020;
originally announced January 2020.
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Temperature dependence of quantum oscillations from non-parabolic dispersions
Authors:
Chunyu Guo,
A. Alexandradinata,
Carsten Putzke,
Amelia Estry,
Teng Tu,
Nitesh Kumar,
Feng-Ren Fan,
Shengnan Zhang,
Quansheng Wu,
Oleg V. Yazyev,
Kent R. Shirer,
Maja D. Bachmann,
Hailin Peng,
Eric D. Bauer,
Filip Ronning,
Yan Sun,
Chandra Shekhar,
Claudia Felser,
Philip J. W. Moll
Abstract:
The phase offset of quantum oscillations is commonly used to experimentally diagnose topologically non-trivial Fermi surfaces. This methodology, however, is inconclusive for spin-orbit-coupled metals where $π$-phase-shifts can also arise from non-topological origins. Here, we show that the linear dispersion in topological metals leads to a $T^2$-temperature correction to the oscillation frequency…
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The phase offset of quantum oscillations is commonly used to experimentally diagnose topologically non-trivial Fermi surfaces. This methodology, however, is inconclusive for spin-orbit-coupled metals where $π$-phase-shifts can also arise from non-topological origins. Here, we show that the linear dispersion in topological metals leads to a $T^2$-temperature correction to the oscillation frequency that is absent for parabolic dispersions. We confirm this effect experimentally in the Dirac semi-metal Cd$_3$As$_2$ and the multiband Dirac metal LaRhIn$_5$. Both materials match a tuning-parameter-free theoretical prediction, emphasizing their unified origin. For topologically trivial Bi$_2$O$_2$Se, no frequency shift associated to linear bands is observed as expected. However, the $π$-phase shift in Bi$_2$O$_2$Se would lead to a false positive in a Landau-fan plot analysis. Our frequency-focused methodology does not require any input from ab-initio calculations, and hence is promising for identifying correlated topological materials.
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Submitted 27 March, 2022; v1 submitted 16 October, 2019;
originally announced October 2019.
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Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate
Authors:
Yumei **g,
Shaoyun Huang,
**xiong Wu,
Mengmeng Meng,
Xiaobo Li,
Yu Zhou,
Hailin Peng,
H. Q. Xu
Abstract:
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topo…
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Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topological insulators. This communication reports on the successful realization of single-electron transistor devices in Bi$_2$Te$_3$ nanoplates by state of the art nanofabrication techniques. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb diamond shaped charge stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in three-dimensional topological insulators, which should greatly stimulate research towards confined topological states, low energy-dissipative devices and quantum information processing.
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Submitted 31 August, 2019;
originally announced September 2019.
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Topological Lifshitz Transitions and Fermi Arc Manipulation in Weyl Semimetal NbAs
Authors:
H. F. Yang,
L. X. Yang,
Z. K. Liu,
Y. Sun,
C. Chen,
H. Peng,
M. Schmidt,
D. Prabhakaran,
B. A. Bernevig,
C. Felser,
B. H. Yan,
Y. L. Chen
Abstract:
Surface Fermi arcs (SFAs), the unique open Fermi-surfaces (FSs) discovered recently in topological Weyl semimetals (TWSs), are unlike closed FSs in conventional materials and can give rise to many exotic phenomena, such as anomalous SFA-mediated quantum oscillations, chiral magnetic effects, three-dimensional quantum Hall effect, non-local voltage generation and anomalous electromagnetic wave tran…
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Surface Fermi arcs (SFAs), the unique open Fermi-surfaces (FSs) discovered recently in topological Weyl semimetals (TWSs), are unlike closed FSs in conventional materials and can give rise to many exotic phenomena, such as anomalous SFA-mediated quantum oscillations, chiral magnetic effects, three-dimensional quantum Hall effect, non-local voltage generation and anomalous electromagnetic wave transmission. Here, by using in-situ surface decoration, we demonstrate successful manipulation of the shape, size and even the connections of SFAs in a model TWS, NbAs, and observe their evolution that leads to an unusual topological Lifshitz transition not caused by the change of the carrier concentration. The phase transition teleports the SFAs between different parts of the surface Brillouin zone. Despite the dramatic surface evolution, the existence of SFAs is robust and each SFA remains tied to a pair of Weyl points of opposite chirality, as dictated by the bulk topology.
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Submitted 3 August, 2019;
originally announced August 2019.
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Evidence of charge density wave with anisotropic gap in monolayer VTe$_2$ film
Authors:
Yuan Wang,
Junhai Ren,
Jiaheng Li,
Yujia Wang,
Huining Peng,
Pu Yu,
Wenhui Duan,
Shuyun Zhou
Abstract:
We report experimental evidence of charge density wave (CDW) transition in monolayer 1T-VTe$_2$ film. 4$\times$4 reconstruction peaks are observed by low energy electron diffraction below the transition temperature $T_{CDW}$ = 186 K. Angle-resolved photoemission spectroscopy measurements reveal arc-like pockets with anisotropic CDW gaps up to 50 meV. The anisotropic CDW gap is attributed to the im…
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We report experimental evidence of charge density wave (CDW) transition in monolayer 1T-VTe$_2$ film. 4$\times$4 reconstruction peaks are observed by low energy electron diffraction below the transition temperature $T_{CDW}$ = 186 K. Angle-resolved photoemission spectroscopy measurements reveal arc-like pockets with anisotropic CDW gaps up to 50 meV. The anisotropic CDW gap is attributed to the imperfect nesting of the CDW wave vector, and first-principles calculations reveal phonon softening at the same vector, suggesting the important roles of Fermi surface nesting and electron-phonon interaction in the CDW mechanism.
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Submitted 31 May, 2019;
originally announced May 2019.
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A Plainified Composite Absorber Enabled by Vertical Interphase
Authors:
Yuhan Li,
Faxiang Qin,
Le Quan,
Huijie Wei,
Huan Wang,
Hua-Xin Peng
Abstract:
Interface constitutes a significant volume fraction in nanocomposites, and it requires the ability to tune and tailor interfaces to tap the full potential of nanocomposites. However, the development and optimization of nanocomposites is currently restricted by the limited exploration and utilization of interfaces at different length scales. In this research, we have designed and introduced a relat…
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Interface constitutes a significant volume fraction in nanocomposites, and it requires the ability to tune and tailor interfaces to tap the full potential of nanocomposites. However, the development and optimization of nanocomposites is currently restricted by the limited exploration and utilization of interfaces at different length scales. In this research, we have designed and introduced a relatively large-scale vertical interphase into carbon nanocomposites, in which the dielectric response and dispersion features in microwave frequency range are successfully adjusted. A remarkable relaxation process has been observed in vertical-interphase nanocomposites, showing sensitivity to both filler loading and the discrepancy in polarization ability across the interphase. Together with our analyses on dielectric spectra and relaxation processes, it is suggested that the intrinsic effect of vertical interphase lies in its ability to constrain and localize heterogeneous charges under external fields. Following this logic, systematic research is presented in this article affording to realize tunable frequency-dependent dielectric functionality by means of vertical interphase engineering. Overall, this study provides a novel method to utilize interfacial effects rationally. The research approach demonstrated here has great potential in develo** microwave dielectric nanocomposites and devices with targeted or unique performance such as tunable broadband absorbers.
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Submitted 4 June, 2019; v1 submitted 10 May, 2019;
originally announced May 2019.
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Microwave programmable response of Co-based microwire polymer composites through wire microstructure and arrangement optimization
Authors:
A. Uddin,
F. X. Qin,
D. Estevez,
S. D. Jiang,
S. A. Jawed,
L. V. Panina,
H. X. Peng
Abstract:
Traditional approaches to realize microwave tunability in microwire polymer composites which mainly rely on topological factors, magnetic field/stress stimuli, and hybridization prove to be burdensome and restricted to rather narrow band frequencies. This work presents a novel yet facile strategy based on a single component tunable medium to program the transmission response over wide frequency ba…
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Traditional approaches to realize microwave tunability in microwire polymer composites which mainly rely on topological factors, magnetic field/stress stimuli, and hybridization prove to be burdensome and restricted to rather narrow band frequencies. This work presents a novel yet facile strategy based on a single component tunable medium to program the transmission response over wide frequency bands. To this end, we demonstrated that structural modification of one type of microwire through suitable current annealing and arrangement of the annealed wires in multiple combinations were sufficient to distinctly red-shift the transmission dip frequency of the composites. Such one wire control-strategy endorsed a programmable multivariable system grounded on the variations in both the overall array conductivity or "effectiv" area determined by the wires arrangement and the relaxation time dictated by the annealing degree of microwires. These results can be used to prescribe transmission frequency bands of desired features via diverse microwire arrays and microwave performance from a single component to a composite system design.
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Submitted 25 June, 2019; v1 submitted 12 April, 2019;
originally announced April 2019.
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Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi$_2$O$_2$Se nanoplate with strong spin-orbit interaction
Authors:
Mengmeng Meng,
Shaoyun Huang,
Congwei Tan,
**xiong Wu,
Xiaobo Li,
Hailin Peng,
H. Q. Xu
Abstract:
We report on phase-coherent transport studies of a Bi$_2$O$_2$Se nanoplate and on observation of universal conductance fluctuations and spin-orbit interaction induced reduction in fluctuation amplitude in the nanoplate. Thin-layered Bi$_2$O$_2$Se nanoplates are grown by chemical vapor deposition (CVD) and transport measurements are made on a Hall-bar device fabricated from a CVD-grown nanoplate. T…
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We report on phase-coherent transport studies of a Bi$_2$O$_2$Se nanoplate and on observation of universal conductance fluctuations and spin-orbit interaction induced reduction in fluctuation amplitude in the nanoplate. Thin-layered Bi$_2$O$_2$Se nanoplates are grown by chemical vapor deposition (CVD) and transport measurements are made on a Hall-bar device fabricated from a CVD-grown nanoplate. The measurements show weak antilocalization at low magnetic fields at low temperatures, as a result of spin-orbit interaction, and a crossover toward weak localization with increasing temperature. Temperature dependences of characteristic transport lengths, such as spin relaxation length, phase coherence length, and mean free path, are extracted from the low-field measurement data. Universal conductance fluctuations are visible in the low-temperature magnetoconductance over a large range of magnetic fields and the phase coherence length extracted from the autocorrelation function is in consistence with the result obtained from the weak localization analysis. More importantly, we find a strong reduction in amplitude of the universal conductance fluctuations and show that the results agree with the analysis assuming strong spin-orbit interaction in the Bi$_2$O$_2$Se nanoplate.
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Submitted 11 May, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Topologically Protected Quantum Coherence in a Superatom
Authors:
Wei Nie,
Z. H. Peng,
Franco Nori,
Yu-xi Liu
Abstract:
Exploring the properties and applications of topological quantum states is essential to better understand topological matter. Here, we theoretically study a quasi-one-dimensional topological atom array. In the low-energy regime, the atom array is equivalent to a topological superatom. Driving the superatom in a cavity, we study the interaction between light and topological quantum states. We find…
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Exploring the properties and applications of topological quantum states is essential to better understand topological matter. Here, we theoretically study a quasi-one-dimensional topological atom array. In the low-energy regime, the atom array is equivalent to a topological superatom. Driving the superatom in a cavity, we study the interaction between light and topological quantum states. We find that the edge states exhibit topology-protected quantum coherence, which can be characterized from the photon transmission. This quantum coherence helps us to find a superradiance-subradiance transition, and we also study its finite-size scaling behavior. The superradiance-subradiance transition also exists in symmetry-breaking systems. More importantly, it is shown that the quantum coherence of the subradiant edge state is robust to random noises, allowing the superatom to work as a topologically protected quantum memory. We suggest a relevant experiment with three-dimensional circuit QED. Our study may have applications in quantum computation and quantum optics based on topological edge states.
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Submitted 27 January, 2020; v1 submitted 27 February, 2019;
originally announced February 2019.
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Formation and dilatation of shear bands in a Cu-Zr metallic glass: A free volume perspective
Authors:
Chunguang Tang,
Hailong Peng,
Yu Chen,
Michael Ferry
Abstract:
We study the tensile deformation behaviour of metallic glass Cu$_{50}$Zr$_{50}$ as a function of quenching rate using molecular dynamics simulations. The atomic scale shearing is found to be independent on atomic free volume, and the macroscopic correlation between the yield strength and the density (or average free volume) is a coincidence that the samples with large free volume also have a low d…
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We study the tensile deformation behaviour of metallic glass Cu$_{50}$Zr$_{50}$ as a function of quenching rate using molecular dynamics simulations. The atomic scale shearing is found to be independent on atomic free volume, and the macroscopic correlation between the yield strength and the density (or average free volume) is a coincidence that the samples with large free volume also have a low density of shear-resistant local five-fold symmetry. In the relatively slowly quenched ($\leq 10^{10}$ K/s) samples, shear bands have a dilatation about 0.5\%, which compares well with recent experiment results. In contrast, although more active local shearing occurs in the rapidly quenched samples, shear bands are not observed. This is because the strain energy disperses into local atomic shearing at the macroscopically elastic stage and, hence, is not sufficient for shear band activation, resulting in homogeneous deformation and appreciable plasticity.
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Submitted 16 January, 2019;
originally announced January 2019.
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Truly concomitant and independently expressed short- and long-term plasticity in Bi2O2Se-based three-terminal memristor
Authors:
Ziyang Zhang,
Tianran Li,
Yujie Wu,
Yinjun Jia,
Congwei Tan,
Xintong Xu,
Guanrui Wang,
Juan Lv,
Wei Zhang,
Yuhan He,
Lu** Shi,
Hailin Peng,
Huanglong Li
Abstract:
Orchestration of diverse synaptic plasticity mechanisms across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable to emulate short- and long-term plasticity (STP and LTP, respectively) concomitantly are essential. However, this fundamental bionic trait has not been reported in any existi…
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Orchestration of diverse synaptic plasticity mechanisms across different timescales produces complex cognitive processes. To achieve comparable cognitive complexity in memristive neuromorphic systems, devices that are capable to emulate short- and long-term plasticity (STP and LTP, respectively) concomitantly are essential. However, this fundamental bionic trait has not been reported in any existing memristors where STP and LTP can only be induced selectively because of the inability to be decoupled using different loci and mechanisms. In this work, we report the first demonstration of truly concomitant STP and LTP in a three-terminal memristor that uses independent physical phenomena to represent each form of plasticity. The emerging layered material Bi2O2Se is used in memristor for the first time, opening up the prospects for ultra-thin, high-speed and low-power neuromorphic devices. The concerted action of STP and LTP in our memristor allows full-range modulation of the transient synaptic efficacy, from depression to facilitation, by stimulus frequency or intensity, providing a versatile device platform for neuromorphic function implementation. A recurrent neural circuitry model is developed to simulate the intricate "sleep-wake cycle autoregulation" process, in which the concomitance of STP and LTP is posited as a key factor in enabling this neural homeostasis. This work sheds new light on the highly sophisticated computational capabilities of memristors and their prospects for realization of advanced neuromorphic functions.
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Submitted 1 October, 2018;
originally announced October 2018.
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Transport signatures of relativistic quantum scars in a graphene cavity
Authors:
G. Q. Zhang,
Xianzhang Chen,
Li Lin,
Hailin Peng,
Zhongfan Liu,
Liang Huang,
N. Kang,
H. Q. Xu
Abstract:
We study a relativistic quantum cavity system realized by etching out from a graphene sheet by quantum transport measurements and theoretical calculations. The conductance of the graphene cavity has been measured as a function of the back gate voltage (or the Fermi energy) and the magnetic field applied perpendicular to the graphene sheet, and characteristic conductance contour patterns are observ…
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We study a relativistic quantum cavity system realized by etching out from a graphene sheet by quantum transport measurements and theoretical calculations. The conductance of the graphene cavity has been measured as a function of the back gate voltage (or the Fermi energy) and the magnetic field applied perpendicular to the graphene sheet, and characteristic conductance contour patterns are observed in the measurements. In particular, two types of high conductance contour lines, i.e., straight and parabolic-like high conductance contour lines, are found in the measurements. The theoretical calculations are performed within the framework of tight-binding approach and Green's function formalism. Similar characteristic high conductance contour features as in the experiments are found in the calculations. The wave functions calculated at points selected along a straight conductance contour line are found to be dominated by a chain of scars of high probability distributions arranged as a necklace following the shape of cavity and the current density distributions calculated at these point are dominated by an overall vortex in the cavity. These characteristics are found to be insensitive to increasing magnetic field. However, the wave function probability distributions and the current density distributions calculated at points selected along a parabolic-like contour line show a clear dependence on increasing magnetic field, and the current density distributions at these points are characterized by the complex formation of several localized vortices in the cavity. Our work brings a new insight into quantum chaos in relativistic particle systems and would greatly stimulate experimental and theoretical efforts towards this still emerging field.
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Submitted 23 September, 2018;
originally announced September 2018.
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Re-thinking CO adsorption on transition-metal surfaces: Density-driven error?
Authors:
Abhirup Patra,
Haowei Peng,
Jianwei Sun,
John P. Perdew
Abstract:
Adsorption of the molecule CO on metallic surfaces is an important unsolved problem in Kohn-Sham density functional theory (KS-DFT). We present a detailed study of carbon monoxide adsorption on fcc (111) surfaces of 3d, 4d and 5d metals using nonempirical semilocal density functionals for the exchange-correlation energy: the local-density approximation (LDA), two generalized gradient approximation…
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Adsorption of the molecule CO on metallic surfaces is an important unsolved problem in Kohn-Sham density functional theory (KS-DFT). We present a detailed study of carbon monoxide adsorption on fcc (111) surfaces of 3d, 4d and 5d metals using nonempirical semilocal density functionals for the exchange-correlation energy: the local-density approximation (LDA), two generalized gradient approximations or GGAs (PBE and PBEsol), and a meta-GGA (SCAN). The typical error pattern (as found earlier for free molecules and for free transition metal surfaces), in which results improve from LDA to PBE or PBEsol to SCAN, due to the satisfaction of more exact constraints, is not found here. Instead, for CO adsorption on transition metal surfaces, we find that, while SCAN overbinds much less than LDA, it overbinds slightly more than PBE. Moreover, the tested functionals often predict the wrong adsorption site, as first pointed out for LDA and GGA in the ``CO/Pt (111) puzzle". This abnormal pattern leads us to suspect that the errors of PBE and SCAN for this problem are density-driven self-interaction errors associated with incorrect charge transfer between molecule and metal surface. We point out that, by the variational principle, overbinding by an approximate functional would be reduced if that functional were applied not to its selfconsistent density for the adsorbed system but to an exact or more correct density for that system. Finally, we show for CO on Pt(111) that the site preference is corrected and the adsorption energy is improved for the PBE functional by using not the selfconsistent PBE density but a PBE+U density. The resulting correction to the PBE total energy is much larger for the adsorbed system than for its desorbed components, showing that the error is in the density of the adsorbed system. This seems to solve the ``CO/Pt (111) puzzle", in principle if not fully in practice.
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Submitted 28 June, 2019; v1 submitted 14 July, 2018;
originally announced July 2018.
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Raman Spectra and Strain Effects in Bismuth Oxychalcogenides
Authors:
Ting Cheng,
Congwei Tan,
Shuqing Zhang,
Teng Tu,
Hailin Peng,
Zhirong Liu
Abstract:
A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experime…
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A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experimental peaks were fully consistent with the calculated results, and were successfully assigned. Bi2O2S was predicted to have more Raman-active modes due to its lower symmetry. The shift of the predicted frequencies of Raman active modes was also found to get softened as the interlayer interaction decreases from bulk to monolayer Bi2O2Se and Bi2O2Te. To reveal the strain effects on the Raman shifts, a universal theoretical equation was established based on the symmetry of Bi2O2Se and Bi2O2Te. It was predicted that the doubly degenerate modes split under in-plane uniaxial/shear strains. Under a rotated uniaxial strain, the changes of Raman shifts are anisotropic for degenerate modes although Bi2O2Se and Bi2O2Te were usually regarded as isotropic systems similar to graphene. This implies a novel method to identify the crystallographic orientation from Raman spectra under strain. These results have important consequences for the incorporation of 2D Bismuth oxychalcogenides into nanoelectronic devices.
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Submitted 22 May, 2018;
originally announced May 2018.
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Self-Modulation Do** Effect in the High-Mobility Layered Semiconductor Bi2O2Se
Authors:
Huixia Fu,
**xiong Wu,
Hailin Peng,
Binghai Yan
Abstract:
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes Bi2O2Se from other semiconductors. We found that the electron donor states lie above the lowest conduction band. Thus, electrons get spontaneously ionized from do…
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Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes Bi2O2Se from other semiconductors. We found that the electron donor states lie above the lowest conduction band. Thus, electrons get spontaneously ionized from donor sites (e.g., Se vacancies) without involving the thermal activation, different from the donor ionization in conventional semiconductors. Consequently, the resistance decreases as reducing the temperature as observed in our measurement, which is similar to a metal but contrasts to a usual semiconductor. Furthermore, the electron conduction channels locate spatially away from ionized donor defects (Se vacancies) in different van der Waals layers. Such a spatial separation can strongly suppress the scattering caused by donor sites and subsequently increase the electron mobility, especially at the low temperature. We call this high-mobility mechanism self-modulation do**, i.e. the modulation do** spontaneously happening in a single-phase material without requiring a heterojunction. Our work paves a way to design novel high-mobility semiconductors with layered materials.
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Submitted 9 April, 2018;
originally announced April 2018.
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Low-field magnetotransport in graphene cavity devices
Authors:
G. Q. Zhang,
N. Kang,
J. Y. Li,
Li Lin,
Hailin Peng,
Zhongfan Liu,
H. Q. Xu
Abstract:
Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behavior…
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Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we have observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We have also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices.
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Submitted 25 February, 2018;
originally announced February 2018.
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Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures
Authors:
Jiayu Li,
Li Lin,
Guang-Yao Huang,
N. Kang,
**can Zhang,
Hailin Peng,
Zhongfan Liu,
H. Q. Xu
Abstract:
Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for develo** nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly $0^{\circ}$-twisted G/$h$-BN heterostructures. The heterostructures investigated are prepared by dry transfer and ther…
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Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for develo** nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly $0^{\circ}$-twisted G/$h$-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately $3000~\mathrm{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$ at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry to the presences of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/$h$-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/$h$-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/$h$-BN heterostructures.
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Submitted 9 February, 2018;
originally announced February 2018.
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Strong spin-orbit interaction and magnetotransport in semiconductor Bi$_2$O$_2$Se nanoplates
Authors:
Mengmeng Meng,
Shaoyun Huang,
Congwei Tan,
**xiong Wu,
Yumei **g,
Hailin Peng,
H. Q. Xu
Abstract:
Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for develo** spintronic and topological quantum devic…
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Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for develo** spintronic and topological quantum devices, if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Here, we report on experimental determination of the strength of spin-orbit interaction in Bi$_2$O$_2$Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of the magnetoconductance based on an interference theory which describes the quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Comparing to other semiconductor nanostructures, the extracted relatively short spin relaxation length of ~150 nm indicates the existence of strong spin-orbit interaction in Bi$_2$O$_2$Se nanolayers.
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Submitted 3 January, 2018;
originally announced January 2018.