Antisymmetric Planar Hall Effect in Rutile Oxide Films Induced by the Lorentz Force
Authors:
Yongwei Cui,
Zhaoqing Li,
Haoran Chen,
Yue Chen,
Yunzhuo Wu,
Ke Pei,
Tong Wu,
Nian Xie,
Renchao Che,
Xuepeng Qiu,
Yi Liu,
Zhe Yuan,
Yizheng Wu
Abstract:
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodi…
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The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.
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Submitted 2 June, 2024; v1 submitted 12 August, 2023;
originally announced August 2023.
Deterministic generation of skyrmions and antiskyrmions by electric current
Authors:
Xuebing Zhao,
** Tang,
Ke Pei,
Weiwei Wang,
Shi-Zeng Lin,
Haifeng Du,
Mingliang Tian,
Renchao Che
Abstract:
Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have demonstrated this operation, the topological charge of the generated skyrmions is determined by the direction of the external magnetic fields, thus is fixed. Here, we r…
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Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have demonstrated this operation, the topological charge of the generated skyrmions is determined by the direction of the external magnetic fields, thus is fixed. Here, we report the current-induced skyrmions creation in a chiral magnet FeGe nanostructure by using the \emph{in-situ} Lorentz transmission electron microscopy. We show that magnetic skyrmions or antiskyrmions can be both transferred from the magnetic helical ground state simply by controlling the direction of the current flow at zero magnetic field. The force analysis and symmetry consideration, backed up by micromagnetic simulations, well explain the experimental results, where magnetic skyrmions or antiskyrmions are created due to the edge instability of the helical state in the presence of spin transfer torque. The on-demand generation of skyrmions and control of their topology by electric current without the need of magnetic field will enable novel purely electric-controlled skyrmion devices.
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Submitted 10 October, 2021;
originally announced October 2021.
