Showing 1–41 of 41 results for author: Park, G

Correlation Functions From Tensor Network Influence Functionals: The Case of the Spin-Boson Model

Authors: Haimi Nguyen, Nathan Ng, Lachlan P. Lindoy, Gunhee Park, Andrew J. Millis, Garnet Kin-Lic Chan, David R. Reichman

Abstract: We investigate the application of matrix product state (MPS) representations of the influence functionals (IF) for the calculation of real-time equilibrium correlation functions in open quantum systems. Focusing specifically on the unbiased spin-boson model, we explore the use of IF-MPSs for complex time propagation, as well as IF-MPSs for constructing correlation functions in the steady state. We… ▽ More We investigate the application of matrix product state (MPS) representations of the influence functionals (IF) for the calculation of real-time equilibrium correlation functions in open quantum systems. Focusing specifically on the unbiased spin-boson model, we explore the use of IF-MPSs for complex time propagation, as well as IF-MPSs for constructing correlation functions in the steady state. We examine three different IF approaches: one based on the Kadanoff-Baym contour targeting correlation functions at all times, one based on a complex contour targeting the correlation function at a single time, and a steady state formulation which avoids imaginary or complex times, while providing access to correlation functions at all times. We show that within the IF language, the steady state formulation provides a powerful approach to evaluate equilibrium correlation functions. △ Less

Submitted 22 June, 2024; originally announced June 2024.

Imaging thermally fluctuating Nèel vectors in van der Waals antiferromagnet NiPS3

Authors: You** Lee, Chaebin Kim, Suhan Son, **gyuan Cui, Giung Park, Kai-Xuan Zhang, Siwon Oh, Hyeonsik Cheong, Armin Kleibert, Je-Geun Park

Abstract: Studying antiferromagnetic domains is essential for fundamental physics and potential spintronics applications. Despite its importance, few systematic studies have been performed on van der Waals (vdW) antiferromagnets (AFMs) domains with high spatial resolutions, and direct probing of the Nèel vectors remains challenging. In this work, we found a multidomain in vdW AFM NiPS3, a material extensive… ▽ More Studying antiferromagnetic domains is essential for fundamental physics and potential spintronics applications. Despite its importance, few systematic studies have been performed on van der Waals (vdW) antiferromagnets (AFMs) domains with high spatial resolutions, and direct probing of the Nèel vectors remains challenging. In this work, we found a multidomain in vdW AFM NiPS3, a material extensively investigated for its exotic magnetic exciton. We employed photoemission electron microscopy combined with the X-ray magnetic linear dichroism (XMLD-PEEM) to image the NiPS3's magnetic structure. The nanometer-spatial resolution of XMLD-PEEM allows us to determine local Nèel vector orientations and discover thermally fluctuating Néel vectors that are independent of the crystal symmetry even at 65 K, well below TN of 155 K. We demonstrate a Ni ions' small in-plane orbital moment anisotropy is responsible for the weak magneto-crystalline anisotropy. The observed multidomain's thermal fluctuations may explain the broadening of magnetic exciton peaks at higher temperatures. △ Less

Submitted 3 May, 2024; originally announced May 2024.

A Bayesian Committee Machine Potential for Organic Nitrogen Compounds

Authors: Hyun Gyu Park, Soohaeng Yoo Willow, D. ChangMo Yang, Chang Woo Myung

Abstract: Large-scale computer simulations of chemical atoms are used in a wide range of applications, including batteries, drugs, and more. However, there is a problem with efficiency as it takes a long time due to the large amount of calculation. To solve these problems, machine learning interatomic potential (ML-IAP) technology is attracting attention as an alternative. ML-IAP not only has high accuracy… ▽ More Large-scale computer simulations of chemical atoms are used in a wide range of applications, including batteries, drugs, and more. However, there is a problem with efficiency as it takes a long time due to the large amount of calculation. To solve these problems, machine learning interatomic potential (ML-IAP) technology is attracting attention as an alternative. ML-IAP not only has high accuracy by faithfully expressing the density functional theory (DFT), but also has the advantage of low computational cost. However, there is a problem that the potential energy changes significantly depending on the environment of each atom, and expansion to a wide range of compounds within a single model is still difficult to build in the case of a kernel-based model. To solve this problem, we would like to develop a universal ML-IAP using this active Bayesian Committee Machine (BCM) potential methodology for carbon-nitrogen-hydrogen (CNH) with various compositions. ML models are trained and generated through first-principles calculations and molecular dynamics simulations for molecules with only CNH. Using long amine structures to test an ML model trained only with short chains, the results show excellent consistency with DFT calculations. Consequently, machine learning-based models for organic molecules not only demonstrate the ability to accurately describe various physical properties but also hold promise for investigating a broad spectrum of diverse materials systems. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Tensor network influence functionals in the continuous-time limit: connections to quantum embedding, bath discretization, and higher-order time propagation

Authors: Gunhee Park, Nathan Ng, David R. Reichman, Garnet Kin-Lic Chan

Abstract: We describe two developments of tensor network influence functionals (in particular, influence functional matrix product states (IF-MPS)) for quantum impurity dynamics within the fermionic setting of the Anderson impurity model. The first provides the correct extension of the IF-MPS to continuous time by introducing a related mathematical object, the boundary influence functional MPS. The second c… ▽ More We describe two developments of tensor network influence functionals (in particular, influence functional matrix product states (IF-MPS)) for quantum impurity dynamics within the fermionic setting of the Anderson impurity model. The first provides the correct extension of the IF-MPS to continuous time by introducing a related mathematical object, the boundary influence functional MPS. The second connects the dynamics described by a compressed IF-MPS to that of a quantum embedding method with a time-dependent effective bath undergoing nonunitary dynamics. Using these concepts, we implement higher-order time propagators for the quench dynamics of the Anderson impurity model within the boundary IF-MPS formalism. The calculations illustrate the ability of the current formulation to efficiently remove the time step error in standard discrete-time IF-MPS implementations as well as to interface with state vector propagation techniques. They also show the advantages of IF-MPS dynamics, with its associated highly compact effective bath dynamics, over state vector propagation with a static bath discretization. △ Less

Submitted 2 July, 2024; v1 submitted 22 January, 2024; originally announced January 2024.

Journal ref: Physical Review B 110, 045104 (2024)

New twisted van der Waals fabrication method based on strongly adhesive polymer

Authors: Giung Park, Suhan Son, Jongchan Kim, Yunyeong Chang, Kaixuan Zhang, Miyoung Kim, Jieun Lee, Je-Geun Park

Abstract: Observations of emergent quantum phases in twisted bilayer graphene prompted a flurry of activities in van-der-Waals (vdW) materials beyond graphene. Most current twisted experiments use a so-called tear-and-stack method using a polymer called PPC. However, despite the clear advantage of the current PPC tear-and-stack method, there are also technical limitations, mainly a limited number of vdW mat… ▽ More Observations of emergent quantum phases in twisted bilayer graphene prompted a flurry of activities in van-der-Waals (vdW) materials beyond graphene. Most current twisted experiments use a so-called tear-and-stack method using a polymer called PPC. However, despite the clear advantage of the current PPC tear-and-stack method, there are also technical limitations, mainly a limited number of vdW materials that can be studied using this PPC-based method. This technical bottleneck has been preventing further development of the exciting field beyond a few available vdW samples. To overcome this challenge and facilitate future expansion, we developed a new tear-and-stack method using a strongly adhesive polycaprolactone (PCL). With similar angular accuracy, our technology allows fabrication without a cap** layer, facilitating surface analysis and ensuring inherently clean interfaces and low operating temperatures. More importantly, it can be applied to many other vdW materials that have remained inaccessible with the PPC-based method. We present our results on twist homostructures made with a wide choice of vdW materials - from two well-studied vdW materials (graphene and MoS$_2$) to the first-ever demonstrations of other vdW materials (NbSe$_2$, NiPS$_3$, and Fe$_3$GeTe$_2$). Therefore, our new technique will help expand $moir\acute{e}$ physics beyond few selected vdW materials and open up more exciting developments. △ Less

Submitted 8 January, 2024; originally announced January 2024.

Comments: 26 pages, 4+7 figures, accepted to 2D Materials

Controllable Andreev Bound States in Bilayer Graphene Josephson Junction from Short to Long Junction Limits

Authors: Geon-Hyoung Park, Wonjun Lee, Sein Park, Kenji Watanabe, Takashi Taniguchi, Gil Young Cho, Gil-Ho Lee

Abstract: We demonstrate that the mode number of Andreev bound states in bilayer graphene Josephson junctions can be modulated by in situ control of the superconducting coherence length. By exploiting the quadratic band dispersion of bilayer graphene, we control the Fermi velocity and thus the coherence length by the application of the electrostatic gating. Tunneling spectroscopy of Andreev bound states rev… ▽ More We demonstrate that the mode number of Andreev bound states in bilayer graphene Josephson junctions can be modulated by in situ control of the superconducting coherence length. By exploiting the quadratic band dispersion of bilayer graphene, we control the Fermi velocity and thus the coherence length by the application of the electrostatic gating. Tunneling spectroscopy of Andreev bound states reveals a crossover from short to long Josephson junction regimes as the gate voltage is approached near the charge neutral point of bilayer graphene. Furthermore, quantitative analysis of Andreev spectrums for different mode numbers allows us to quantitatively estimate the phase-dependent Josephson current. Our work paves a new way to study multi-mode Andreev levels and to engineer Fermi velocity with bilayer graphene. △ Less

Submitted 5 December, 2023; originally announced December 2023.

Comments: 11 pages, 3 figures

Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors

Authors: Gyuna Park, Ivan Zhigulin, Hoyoung Jung, Jake Horder, Karin Yamamura, Yerin Han, Kenji Watanabe, Takashi Taniguchi, Igor Aharonovich, Jonghwan Kim

Abstract: Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly sought after. However, most wide band gap materials are not amenable to efficient do**, which in turn poses challenges on efficient electrical excitation and on-ch… ▽ More Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly sought after. However, most wide band gap materials are not amenable to efficient do**, which in turn poses challenges on efficient electrical excitation and on-chip integration. Here, we demonstrate for the first time room temperature electroluminescence from isolated colour centres in hexagonal boron nitride (hBN). We harness the van der Waals (vdW) structure of two-dimensional materials, and engineer nanoscale devices comprised of graphene - hBN - graphene tunnel junctions. Under an applied bias, charge carriers are injected into hBN, and result in a localised light emission from the hBN colour centres. Remarkably, our devices operate at room temperature and produce robust, narrowband emission spanning a wide spectral range - from the visible to the near infrared. Our work marks an important milestone in van der Waals materials and their promising attributes for integrated quantum technologies and on-chip photonic circuits. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Comments: 16 pages, 4 figures

Emergence of Chaos in Magnetic-Field-Driven Skyrmions

Authors: Gyuyoung Park, Sang-Koog Kim

Abstract: We explore magnetic-field-driven chaos in magnetic skyrmions. Oscillating magnetic fields induce nonlinear dynamics in skyrmions, arising from the coupling of the secondary gyrotropic mode with a non-uniform, breathing-like mode. Through micromagnetic simulations, we observe complex patterns of hypotrochoidal motion in the orbital trajectories of the skyrmions, which are interpreted using bifurcat… ▽ More We explore magnetic-field-driven chaos in magnetic skyrmions. Oscillating magnetic fields induce nonlinear dynamics in skyrmions, arising from the coupling of the secondary gyrotropic mode with a non-uniform, breathing-like mode. Through micromagnetic simulations, we observe complex patterns of hypotrochoidal motion in the orbital trajectories of the skyrmions, which are interpreted using bifurcation diagrams and local Lyapunov exponents. Our findings demonstrate that different nonlinear behaviors of skyrmions emerge at distinct temporal stages, depending on the nonlinear dynamic parameters. Investigating the abundant dynamic patterns of skyrmions during the emergence of chaos not only enhances device reliability but also provides useful guidelines for establishing chaos computing based on skyrmion dynamics. △ Less

Submitted 8 September, 2023; originally announced September 2023.

Broken Kramers' degeneracy in altermagnetic MnTe

Authors: Suyoung Lee, Sangjae Lee, Saegyeol Jung, Jiwon Jung, Donghan Kim, Yeonjae Lee, Byeongjun Seok, Jaeyoung Kim, Byeong Gyu Park, Libor Šmejkal, Chang-Jong Kang, Changyoung Kim

Abstract: Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of altermagnetic phase. By combining high-quality film growth and $in~situ$ angle-resolved photoemission spectroscopy, we… ▽ More Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of altermagnetic phase. By combining high-quality film growth and $in~situ$ angle-resolved photoemission spectroscopy, we report the electronic structure of an altermagnetic candidate, $α$-MnTe. Temperature dependent study reveals the lifting of Kramers{\textquoteright} degeneracy accompanied by a magnetic phase transition at $T_N=267\text{ K}$ with spin splitting of up to $370\text{ meV}$, providing direct spectroscopic evidence for altermagnetism in MnTe. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Ultrafast switching of topological invariants by light-driven strain

Authors: Tae Gwan Park, Seungil Baek, Junho Park, Eui-Cheol Shin, Hong Ryeol Na, Eon-Taek Oh, Seung-Hyun Chun, Yong-Hyun Kim, Sunghun Lee, Fabian Rotermund

Abstract: Reversible control of the topological invariants from nontrivial to trivial states has fundamental implications for quantum information processors and spintronics, by realizing of an on/off switch for robust and dissipationless spin-current. Although mechanical strain has typically advantageous for such control of topological invariants, it is often accompanied by in-plane fractures and is not sui… ▽ More Reversible control of the topological invariants from nontrivial to trivial states has fundamental implications for quantum information processors and spintronics, by realizing of an on/off switch for robust and dissipationless spin-current. Although mechanical strain has typically advantageous for such control of topological invariants, it is often accompanied by in-plane fractures and is not suited for high-speed, time-dependent operations. Here, we use ultrafast optical and THz spectroscopy to investigate topological phase transitions by light-driven strain in Bi$_2$Se$_3$, a material that requires substantial strain for $\mathrm{Z}_2$ switching. We show that Bi$_2$Se$_3$ experiences ultrafast switching from being a topological insulator with spin-momentum-locked surfaces, to hybridized states and normal insulating phases at ambient conditions. Light-induced strong out-of-plane strain can suppress the surface-bulk coupling, enabling differentiation of surface and bulk conductance at room temperature, far above the Debye temperature. We illustrate various time-dependent sequences of transient hybridization, as well as the switching operation of topological invariants by adjusting the photoexcitation intensity. The abrupt alterations in both surface and bulk transport near the transition point allow for coherent conductance modulation at hyper-sound frequencies. Our findings regarding light-triggered ultrafast switching of topological invariants pave the way for high-speed topological switching and its associated applications. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Comments: 14 pages, 4 figure, and Supplementary Material

Real time evolution of Anderson impurity models via tensor network influence functionals

Authors: Nathan Ng, Gunhee Park, Andrew J. Millis, Garnet Kin-Lic Chan, David R. Reichman

Abstract: In this work we present and analyze two tensor network-based influence functional approaches for simulating the real-time dynamics of quantum impurity models such as the Anderson model. Via comparison with recent numerically exact simulations, we show that such methods accurately capture the long-time non-equilibrium quench dynamics. The two parameters that must be controlled in these tensor netwo… ▽ More In this work we present and analyze two tensor network-based influence functional approaches for simulating the real-time dynamics of quantum impurity models such as the Anderson model. Via comparison with recent numerically exact simulations, we show that such methods accurately capture the long-time non-equilibrium quench dynamics. The two parameters that must be controlled in these tensor network influence functional approaches are a time discretization (Trotter) error and a bond dimension (tensor network truncation) error. We show that the actual numerical uncertainties are controlled by an intricate interplay of these two approximations which we demonstrate in different regimes. Our work opens the door to using these tensor network influence functional methods as general impurity solvers. △ Less

Submitted 21 November, 2022; v1 submitted 18 November, 2022; originally announced November 2022.

Correlating Nanoscale Structure with Electrochemical Property of Solid Electrolyte Interphases in Solid-State Battery Electrodes

Authors: Jimin Oh, Gun Park, Hongjun Kim, Sujung Kim, Dong Ok Shin, Kwang Man Kim, Hye Ryung Byon, Young-Gi Lee, Seungbum Hong

Abstract: Here, we correlate the nanoscale morphology and chemical composition of solid electrolyte interphases (SEI) with the electrochemical property of graphite-based composite electrodes. Using electrochemical strain microscopy (ESM) and X-ray photoelectron spectroscopy (XPS), changes of chemical composition and morphology (Li and F distribution) in SEI layers on the electrodes as a function of solid el… ▽ More Here, we correlate the nanoscale morphology and chemical composition of solid electrolyte interphases (SEI) with the electrochemical property of graphite-based composite electrodes. Using electrochemical strain microscopy (ESM) and X-ray photoelectron spectroscopy (XPS), changes of chemical composition and morphology (Li and F distribution) in SEI layers on the electrodes as a function of solid electrolyte contents are analyzed. As a result, we find a strong correlation between morphological variations on the electrode, Li and F distribution in SEI layer, and Coulomb efficiency. This correlation determines the optimum composition of the composite electrode surface that can maximize the physical and chemical uniformity of the solid electrolyte on the electrode, which is a key parameter to increase electrochemical performance in solid-state batteries. △ Less

Submitted 8 September, 2022; originally announced September 2022.

Comments: 35 pages, 13 figures

Probing the carrier dynamics of polymer composites with single and hybrid carbon nanotube fillers for improved thermoelectric performance

Authors: Ioannis Konidakis, Beate Krause, Gyu-Hyeon Park, Nithin Pulumati, Heiko Reith, Petra Pötschke, Emmanuel Stratakis

Abstract: The incorporation of carbon nanotubes (CNTs) within polymer hosts offers a great platform for the development of advanced thermoelectric (TE) composite materials. Over the years, several CNT/polymer composite formulations have been investigated on an effort to maximize the TE performance. Meanwhile, several studies focused on the decay dynamics of the charged excitons within CNTs itself and theref… ▽ More The incorporation of carbon nanotubes (CNTs) within polymer hosts offers a great platform for the development of advanced thermoelectric (TE) composite materials. Over the years, several CNT/polymer composite formulations have been investigated on an effort to maximize the TE performance. Meanwhile, several studies focused on the decay dynamics of the charged excitons within CNTs itself and therefrom derived structures, aiming to investigate the lifetimes and the corresponding recombination processes of free charge carriers. The latter physical phenomena play a crucial role in the performance of various types of energy converting and scavenging materials. Nevertheless, up to this date, there is no systematic study on the combination of TE parameters and the critical charge carrier dynamics within CNT containing TE polymer composites. Herein, a variety of composites with single and hybrid CNT fillers based on polycarbonate (PC) and polyether ether ketone (PEEK) polymer matrices were prepared by melt-mixing in small scale. At the same loading, the addition of single fillers in PC results in higher Seebeck coefficients and similar conductivities when compared to the use of hybrid filler systems. In contrast, with hybrid filler systems in PEEK composites, higher power factors could be reached than in single filler composites. Moreover, the PC-based composites are studied using ultrafast laser time-resolved transient absorption spectroscopy (TAS), for the investigation of the exciton lifetimes and the physical origins of free charge carrier transport within the TE films. The findings of this study reveal interesting links between the TE parameters and the obtained charge carrier dynamics. △ Less

Submitted 25 August, 2022; v1 submitted 22 August, 2022; originally announced August 2022.

Journal ref: ACS Appl. Energy Mater. 5, 9770, 2022

Ideal refocusing of an optically active spin qubit under strong hyperfine interactions

Authors: Leon Zaporski, Noah Shofer, Jonathan H. Bodey, Santanu Manna, George Gillard, Daniel M. Jackson, Martin Hayhurst Appel, Christian Schimpf, Saimon Covre da Silva, John Jarman, Geoffroy Delamare, Gunhee Park, Urs Haeusler, Evgeny A. Chekhovich, Armando Rastelli, Dorian A. Gangloff, Mete Atatüre, Claire Le Gall

Abstract: Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matche… ▽ More Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matched GaAs-AlGaAs quantum dot devices prolongs the electron spin coherence by nearly two orders of magnitude, beyond 0.113(3) ms. To do this, we leverage the 99.30(5)% fidelity of our optical pi-pulse gates to implement dynamical decoupling. We vary the number of decoupling pulses up to N = 81 and find a coherence time scaling of N^{0.75(2)}. This scaling manifests an ideal refocusing of strong interactions between the electron and the nuclear-spin ensemble, holding the promise of lifetime-limited spin coherence. Our findings demonstrate that the most punishing material science challenge for such quantum-dot devices has a remedy, and constitute the basis for highly coherent spin-photon interfaces. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure

Authors: Jonginn Yun, Suhan Son, Jeacheol Shin, Giung Park, Kaixuan Zhang, Young Jae Shin, Je-Geun Park, Dohun Kim

Abstract: We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching… ▽ More We report unidirectional charge transport in a $\mathrm{NbSe_2}$ noncentrosymmetric superconductor, which is exchange-coupled with a $\mathrm{CrPS_4}$ van der Waals layered antiferromagnetic insulator. The $\mathrm{NbSe_2/CrPS_4}$ bilayer device exhibits bias-dependent superconducting critical-current variations of up to $16\%$, with the magnetochiral anisotropy reaching $\sim 10^5\mathrm{\ T^{-1}A^{-1}}$. Furthermore, the $\mathrm{CrPS_4/NbSe_2/CrPS_4}$ spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to $40\%$. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. It exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime ($<50\mathrm{\ mT}$) by exploiting the magnetic proximity effect. △ Less

Submitted 27 June, 2023; v1 submitted 10 November, 2021; originally announced November 2021.

Comments: 25 pages, 3 figures, 2 supplemental figures

Journal ref: Phys. Rev. Research 5, L022064 (2023)

Observation of the orbital Hall effect in a light metal Ti

Authors: Young-Gwan Choi, Daegeun Jo, Kyung-Hun Ko, Dongwook Go, Kyung-Han Kim, Hee Gyum Park, Changyoung Kim, Byoung-Chul Min, Gyung-Min Choi, Hyun-Woo Lee

Abstract: The orbital angular momentum is a core ingredient of orbital magnetism, spin Hall effect, giant Rashba spin splitting, orbital Edelstein effect, and spin-orbit torque. However, its experimental detection is tricky. In particular, direct detection of the orbital Hall effect remains elusive despite its importance for electrical control of magnetic nanodevices. Here we report the direct observation o… ▽ More The orbital angular momentum is a core ingredient of orbital magnetism, spin Hall effect, giant Rashba spin splitting, orbital Edelstein effect, and spin-orbit torque. However, its experimental detection is tricky. In particular, direct detection of the orbital Hall effect remains elusive despite its importance for electrical control of magnetic nanodevices. Here we report the direct observation of the orbital Hall effect in a light metal Ti. The Kerr rotation by the accumulated orbital magnetic moment is measured at Ti surfaces, whose result agrees with theoretical calculations semiquantitatively and is supported by the orbital torque measurement in Ti-based magnetic heterostructures. The results confirm the electron orbital angular momentum as an essential dynamic degree of freedom, which may provide a novel mechanism for the electric control of magnetism. The results may also deepen the understanding of spin, valley, phonon, and magnon dynamics coupled with orbital dynamics. △ Less

Submitted 30 September, 2021; originally announced September 2021.

Journal ref: Nature 619, 52-56 (2023)

Detecting Carbon Nanotube Orientation with Topological Data Analysis of Scanning Electron Micrographs

Authors: Liyu Dong, Haibin Hang, ** Gyu Park, Washington Mio, Richard Liang

Abstract: As the aerospace industry becomes increasingly demanding for stronger lightweight materials, the ultra-strong carbon nanotube (CNT) composites with highly aligned CNT network structures could be the answer. In this work, a novel methodology applying topological data analysis (TDA) to the scanning electron microscope (SEM) images was developed to detect CNT orientation. The CNT bundle extensions in… ▽ More As the aerospace industry becomes increasingly demanding for stronger lightweight materials, the ultra-strong carbon nanotube (CNT) composites with highly aligned CNT network structures could be the answer. In this work, a novel methodology applying topological data analysis (TDA) to the scanning electron microscope (SEM) images was developed to detect CNT orientation. The CNT bundle extensions in certain directions were summarized algebraically and expressed as visible barcodes. The barcodes were then calculated and converted into the total spread function $V(X,θ)$, from which the alignment fraction and the preferred direction could be determined. For validation purposes, the random CNT sheets were mechanically stretched at various strain ratios ranging from $0-40\%$, and quantitative TDA analysis was conducted based on the SEM images taken at random positions. The results showed high consistency ($R^2=0.975$) compared to the Herman's orientation factors derived from the polarized Raman spectroscopy and wide-angle X-ray scattering analysis. Additionally, the TDA method presented great robustness with varying SEM acceleration voltages and magnifications, which might alter the scope in alignment detection. With potential applications in nanofiber systems, this study offers a rapid and simple way to quantify CNT alignment, which plays a crucial role in transferring the CNT properties into engineering products. △ Less

Submitted 9 August, 2021; originally announced August 2021.

Interlayer coupling and ultrafast hot electron transfer dynamics in metallic VSe2/graphene van der Waals heterostructures

Authors: Tae Gwan Park, Byoung Ki Choi, Junho Park, Jungdae Kim, Young Jun Chang, Fabian Rotermund

Abstract: Atomically thin vanadium diselenide (VSe2 ) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T-phase. With the recent development of methods to manufacture high-quality monolayer VSe 2 on van der Waals materials, the outstanding properties of VSe2 -based heterostructures have been widely studied for diverse applications. Dimensional reducti… ▽ More Atomically thin vanadium diselenide (VSe2 ) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T-phase. With the recent development of methods to manufacture high-quality monolayer VSe 2 on van der Waals materials, the outstanding properties of VSe2 -based heterostructures have been widely studied for diverse applications. Dimensional reduction and interlayer coupling with a van der Waals substrate lead to its distinguishable characteristics from its bulk counterparts. However, only a few fundamental studies have investigated the interlayer coupling effects and hot electron transfer dynamics in VSe2 heterostructures. In this work, we reveal ultrafast and efficient interlayer hot electron transfer and interlayer coupling effects in VSe2 /graphene heterostructures. Femtosecond time-resolved reflectivity measurements showed that hot electrons in VSe 2 were transferred to graphene within a 100-fs timescale with high efficiency. Besides, coherent acoustic phonon dynamics indicated interlayer coupling in VSe2 /graphene heterostructures and efficient thermal energy transfer to three-dimensional substrates. Our results provide valuable insights into the intriguing properties of metallic transition metal dichalcogenide heterostructures and motivate designing optoelectronic and photonic devices with tailored properties. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Comments: 30 pages, 5 figures, supplementary information(7 pages, 5 figures)

Journal ref: ACS Nano 2021, 15, 4, 7756

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Authors: Philipp Ritzinger, Helena Reichlova, Dominik Kriegner, Anastasios Markou, Richard Schlitz, Michaela Lammel, Gyu Hyeon Park, Andy Thomas, Pavel Streda, Claudia Felser, Sebastian T. B. Goennenwein, Karel Vyborny

Abstract: Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by f… ▽ More Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented. △ Less

Submitted 28 December, 2020; originally announced December 2020.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. B 104, 094406 (2021)

Band restructuring of ordered/disordered blue TiO2 for visible photocatalyst

Authors: Simgeon Oh, Ji-Hee Kim, Hee Min Hwang, Doyoung Kim, Joosung Kim, G. Hwan Park, Joon Soo Kim, Young Hee Lee, Hyoyoung Lee

Abstract: Black TiO2 with/without noble metal has been proposed for visible photocatalyst, still leaving poor catalyst efficiency. Alternatively, phase-mixed TiO2 such as anatase and rutile has been commonly used for visible catalysts with the inevitable inclusion of noble metal. Here, we perform a noble metal-free visible photocatalyst blue TiO2 with type-II band-aligned ordered anatase/disordered rutile s… ▽ More Black TiO2 with/without noble metal has been proposed for visible photocatalyst, still leaving poor catalyst efficiency. Alternatively, phase-mixed TiO2 such as anatase and rutile has been commonly used for visible catalysts with the inevitable inclusion of noble metal. Here, we perform a noble metal-free visible photocatalyst blue TiO2 with type-II band-aligned ordered anatase/disordered rutile structure, via phase-selective reduction with alkali metals. The changed band alignment in this heterostructure was identified by absorption and ultraviolet photoemission spectroscopy, which was further confirmed by transient charge separation. The band alignment of type-I and type-II was clearly restructured by converting from ordered to disordered phase with a prolonged reduction period and as followed light absorbance enhancement also observed. Initiated type-I in a pristine sample, the type-II was organized from disordered rutile phase in 3-day Li-reduction. The type-II disordered rutile TiO2 heterostructure exhibits a remarkable photocatalytic performance by 55 times higher than conventional P25 TiO2 in solar-light driven hydrogen evolution reaction owing to an efficient electron and hole separation of type-II heterojunction. Furthermore, this restructured heterojunction type-II TiO2 demanded 10 times less Pt amount as a co-catalyst for the comparable photocatalytic performance, compared to Pt decorated type-I pristine anatase/rutile phase-mixed TiO2. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 25 pages, 6 figures

Time-resolved resonant elastic soft X-ray scattering at Pohang Accelerator Laboratory X-ray Free Electron Laser

Authors: Hoyoung Jang, Hyeong-Do Kim, Minseok Kim, Sang Han Park, Soonnam Kwon, Ju Yeop Lee, Sang-Youn Park, Gisu Park, Seonghan Kim, HyoJung Hyun, Sunmin Hwang, Chae-Soon Lee, Chae-Yong Lim, Wonup Gang, Myeong** Kim, Seongbeom Heo, **hong Kim, Gigun Jung, Seungnam Kim, Jaeku Park, Jihwa Kim, Hocheol Shin, Jaehun Park, Tae-Yeong Koo, Hyun-Joon Shin , et al. (9 additional authors not shown)

Abstract: Resonant elastic X-ray scattering has been widely employed for exploring complex electronic ordering phenomena, like charge, spin, and orbital order, in particular in strongly correlated electronic systems. In addition, recent developments of pump-probe X-ray scattering allow us to expand the investigation of the temporal dynamics of such orders. Here, we introduce a new time-resolved Resonant Sof… ▽ More Resonant elastic X-ray scattering has been widely employed for exploring complex electronic ordering phenomena, like charge, spin, and orbital order, in particular in strongly correlated electronic systems. In addition, recent developments of pump-probe X-ray scattering allow us to expand the investigation of the temporal dynamics of such orders. Here, we introduce a new time-resolved Resonant Soft X-ray Scattering (tr-RSXS) endstation developed at the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). This endstation has an optical laser (wavelength of 800 nm plus harmonics) as the pump source. Based on the commissioning results, the tr-RSXS at PAL-XFEL can deliver a soft X-ray probe (400-1300 eV) with a time resolution about ~100 fs without jitter correction. As an example, the temporal dynamics of a charge density wave on a high-temperature cuprate superconductor is demonstrated. △ Less

Submitted 24 July, 2020; v1 submitted 5 June, 2020; originally announced June 2020.

Comments: 7 figures, 2 tables

Journal ref: Rev. Sci. Instrum. 91, 083904 (2020)

Linear magneto-electric phase in ultrathin MnPS$_{3}$ probed by optical second harmonic generation

Authors: H. Chu, C. J. Roh, J. O. Island, C. Li, S. Lee, J. Chen, J. G. Park, A. F. Young, J. S. Lee, D. Hsieh

Abstract: The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der… ▽ More The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der Waals materials. However, it is unknown whether this unique magnetic structure of bulk MnPS$_3$ remains stable in the ultrathin limit. Using optical second harmonic generation rotational anisotropy, we show that long-range linear magneto-electric type N$\acute{\textrm{e}}$el order in MnPS$_3$ persists down to at least 5.3 nm thickness. However an unusual mirror symmetry breaking develops in ultrathin samples on SiO$_2$ substrates that is absent in bulk materials, which is likely related to substrate induced strain. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 124, 027601 (2020)

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films

Authors: Gyu-Hyeon Park, Helena Reichlova, Richard Schlitz, Michaela Lammel, Anastasios Markou, Peter Swekis, Philipp Ritzinger, Dominik Kriegner, Jonathan Noky, Jacob Gayles, Yan Sun, Claudia Felser, Kornelius Nielsch, Sebastian T. B. Goennenwein, Andy Thomas

Abstract: We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistiv… ▽ More We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness. △ Less

Submitted 7 April, 2020; v1 submitted 23 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 060406 (2020)

Nanoscale characterization of the impact of beverages on the enamel surface of human teeth

Authors: Panpan Li, Chungik Oh, Hongjun Kim, Melodie Chen-Glasser, Gun Park, Albina Jetybayeva, Jiwon Yeom, Hoon Kim, Jeongjae Ryu, Seungbum Hong

Abstract: Here we quantitatively evaluate the early stages of mechanical and morphological changes of polished human enamel surfaces induced by soft drinks using atomic force microscopy. With an increase of the immersion time in soft drinks, we found a significant increase of surface roughness (Ra) and a considerable decrease of elastic modulus (E) of the enamel. The prismatic structure of enamel was clearl… ▽ More Here we quantitatively evaluate the early stages of mechanical and morphological changes of polished human enamel surfaces induced by soft drinks using atomic force microscopy. With an increase of the immersion time in soft drinks, we found a significant increase of surface roughness (Ra) and a considerable decrease of elastic modulus (E) of the enamel. The prismatic structure of enamel was clearly observed after a one-hour immersion in Coca-Cola, which shows its strong erosion effect. A high surface roughness of enamel results in a high chance of cavities due to easier bacterial adhesion on rougher surface, while a drastic deterioration of the mechanical properties of the enamel weakens its protection property. Our findings show the variation of enamel surface at the very beginning stage of etching process by acidic drinks, which can also be applicable to the etching mechanism of enamel surface by other sources. △ Less

Submitted 2 September, 2019; originally announced September 2019.

Comments: 17 pages, 4 figures, 1 table

Many-Chain Effects on the Co-nonsolvency of Polymer Brushes in a Good Solvent Mixture

Authors: Gyehyun Park, YounJoon Jung

Abstract: Polymer brushes normally swell in a good solvent and collapse in a poor solvent. An abnormal response of polymer brushes, so-called co-nonsolvency, is the phenomenon where the brush counter-intuitively collapses in a good solvent mixture. In this work, we employed molecular dynamics simulations to investigate the structural properties of the grafted polymers on the occurrence of co-nonsolvency. Br… ▽ More Polymer brushes normally swell in a good solvent and collapse in a poor solvent. An abnormal response of polymer brushes, so-called co-nonsolvency, is the phenomenon where the brush counter-intuitively collapses in a good solvent mixture. In this work, we employed molecular dynamics simulations to investigate the structural properties of the grafted polymers on the occurrence of co-nonsolvency. Brushes with various grafting densities were considered to study the effect of topological excluded volumes on the co-nonsolvency. We found that the brush height follows a novel scaling behavior of the grafting density $h \sim σ_{\text g}^{0.71}$ in the co-nonsolvent mixture. Using the scaling exponent and Alexander-de Gennes theory, an analytic function that predicts the monomer density was obtained. The many-chain effects in the co-nonsolvent lead to the formation of both intermolecular and intramolecular bridging structures. Increasing the grafting density entails lower loo** events occuring because of the intermolcular bridging, causing diverse structural properties. We report how the average thickness, the polymer orientation, and the loo** probability varies as the grafting density increases. Based on these observations, we constructed a phase diagram of the polymer brush system using the average thickness and orientation as order parameters. Our simulations and analytical results reveal the nature of co-nonsolvency in polymer brushes in an explicit way and will help to provide practical guidelines for applications such as drug delivery and sensor devices. △ Less

Submitted 23 August, 2019; v1 submitted 31 May, 2019; originally announced May 2019.

Hindered Quadrupole Order in PrMgNi4 with a Nonmagnetic Doublet Ground State

Authors: Yuka Kusanose, Takahiro Onimaru, Gyeong-Bae Park, Yu Yamane, Kazunori Umeo, Toshiro Takabatake, Naomi Kawata, Tsutomu Mizuta

Abstract: Structural, transport and magnetic properties of single-crystalline samples of a praseodymium-based cubic compound PrMgNi4 were studied. The single-crystal X-ray structural analysis revealed that Mg atoms are substituted for the Pr atoms at the 4a site by 4.5%. The chi(T) data follow the Curie-Weiss law with an effective moment for the Pr3+ ion. The magnetic specific heat divided by temperature, C… ▽ More Structural, transport and magnetic properties of single-crystalline samples of a praseodymium-based cubic compound PrMgNi4 were studied. The single-crystal X-ray structural analysis revealed that Mg atoms are substituted for the Pr atoms at the 4a site by 4.5%. The chi(T) data follow the Curie-Weiss law with an effective moment for the Pr3+ ion. The magnetic specific heat divided by temperature, Cm/T, shows a broad maximum at around 3 K, which is reproduced by a two-level model with a ground state doublet. On cooling below 1 K, Cm/T approaches a constant value, which behavior is reproduced by a random two-level model. The twofold degeneracy of the ground state is lifted by symmetry lowering due to the substituted Mg atoms for the Pr atoms or strong hybridizations between the 4f2 electron states and conduction bands, which hinders the long-range quadrupole order. △ Less

Submitted 28 May, 2019; originally announced May 2019.

Waveguide-integrated, plasmonic enhanced graphene photodetectors

Authors: J. E. Muench, A. Ruocco, M. A. Giambra, V. Miseikis, D. Zhang, J. Wang, H. F. Y. Watson, G. C. Park, S. Akhavan, V. Sorianello, M. Midrio, A. Tomadin, C. Coletti, M. Romagnoli, A. C. Ferrari, I. Goykhman

Abstract: We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneou… ▽ More We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules △ Less

Submitted 11 May, 2019; originally announced May 2019.

Journal ref: Nano Lett 19, 7632 (2019)

Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa

Authors: Helena Reichlova, Richard Schlitz, Sebastian Beckert, Peter Swekis, Anastasios Markou, Yi-Cheng Chen, Savio Fabretti, Gyu Hyeon Park, Anna Niemann, Shashank Sudheendra, Andy Thomas, Kornelius Nielsch, Claudia Felser, Sebastian T. B. Goennenwein

Abstract: The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip the… ▽ More The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$μ$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices. △ Less

Submitted 17 July, 2018; originally announced July 2018.

A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air

Authors: Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Someya Takashi, Iimori Takushi, Komori Fumio, Matsuda Iwao, Maki Suemitsu

Abstract: We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled from the SiC substrate and becomes the second EG layer as confirmed by the low energy electron diffraction, high-resolution transmission electron microscopy, Ram… ▽ More We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled from the SiC substrate and becomes the second EG layer as confirmed by the low energy electron diffraction, high-resolution transmission electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy. The most likely mechanism of the decoupling is given by the oxidation of the SiC surface, which is quite similar to what happens in conventional annealing method in air but with a process time by more than one order of magnitude less. △ Less

Submitted 17 May, 2017; originally announced May 2017.

Optical Characterization of PtSi/Si by Spectroscopic Ellipsometry

Authors: Van Long Le, Tae Jung Kim, Han Gyeol Park, Hwa Seob Kim, Chang Hyun Yoo, Hyoung Uk Kim, Young Dong Kim, Junsoo Kim, Solyee Im, Won Chul Choi, Seung Eon Moon, Eun Soo Nam and

Abstract: We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interfac… ▽ More We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data <ε> = <ε1> + i<ε2> of the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing Tauc-Lorentz and Drude models, the dielectric function (ε) of PtSi films were determined. We found that the composition ratio of Pt:Si is nearly 1:1 for PtSi monolayer and we observed transitions between occupied and unoccupied states in Pt 5d states. We also observed formation of PtSi layers in Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy. △ Less

Submitted 12 June, 2016; originally announced June 2016.

Comments: 18 pages, 10 figures, ICAMD 2015 conference

Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation

Authors: Jakob Buchheim, Roman M. Wyss, Ivan Shorubalko, Hyung Gyu Park

Abstract: We report experimentally and theoretically the behavior of freestanding graphene subject to bombardment of energetic ions, investigating the ability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He+ and Ga+ irradiation offered by focused ion beam techniques enables to investigate the interaction of the en… ▽ More We report experimentally and theoretically the behavior of freestanding graphene subject to bombardment of energetic ions, investigating the ability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He+ and Ga+ irradiation offered by focused ion beam techniques enables to investigate the interaction of the energetic particles and graphene suspended with no support and allows determining sputter yields of the 2D lattice. We find strong dependency of the 2D sputter yield on the species and kinetic energy of the incident ion beams. Freestanding graphene shows material semi-transparency to He+ at high energies (10-30 keV) allowing the passage of >97% He+ particles without creating destructive lattice vacancy. Large Ga+ ions (5-30 keV), in contrast, collide far more often with the graphene lattice to impart significantly higher sputter yield of ~50%. Binary collision theory applied to monolayer and few-layer graphene can successfully elucidate this collision mechanism, in great agreement with experiments. Raman spectroscopy analysis corroborates the passage of a large fraction of He+ ions across graphene without much damaging the lattice whereas several colliding ions create single vacancy defects. Physical understanding of the interaction between energetic particles and suspended graphene can practically lead to reproducible and efficient pattern generation of unprecedentedly small features on 2D materials by design, manifested by our perforation of sub-5-nm pore arrays. This capability of nanometer scale precision patterning of freestanding 2D lattices shows practical applicability of the focused ion beam technology to 2D material processing for device fabrication and integration. △ Less

Submitted 12 January, 2016; originally announced January 2016.

Comments: 31 pages of main text (with 4 figures) plus 4 pages of supporting information (with 2 figures). Original article submitted to a journal for consideration for publication

Observation of negative refraction of Dirac fermions in graphene

Authors: Gil-Ho Lee, Geon-Hyoung Park, Hu-Jong Lee

Abstract: Half a century ago, Veselago proposed left-handed materials with negative permittivity and permeability, in which waves propagate with phase and group velocities in opposite directions. Significant work has been undertaken to attain this left-handed response, such as establishing a negative refractive index in so-called metamaterials, which consist of periodic sub-wavelength structures. However, a… ▽ More Half a century ago, Veselago proposed left-handed materials with negative permittivity and permeability, in which waves propagate with phase and group velocities in opposite directions. Significant work has been undertaken to attain this left-handed response, such as establishing a negative refractive index in so-called metamaterials, which consist of periodic sub-wavelength structures. However, an electronic counterpart has not been demonstrated owing to difficulties in creating repeated structures smaller than the electronic Fermi wavelength (λ_F) of the order ~ 10 nm. Here, without needing to engineer sub-wavelength structures, we demonstrate negative refractive behaviour of Dirac fermions in graphene, exploiting its unique relativistic band structure. Analysis of both electron focusing through a n-p-n flat lens and negative refraction across n-p junctions confirms left-handed behaviour in the electronic system. This new approach to electronic optics is of particular relevance to the on-going efforts to develop novel quantum devices with emerging layered materials. △ Less

Submitted 27 June, 2015; v1 submitted 20 June, 2015; originally announced June 2015.

Comments: 16 pages, 4 figures

Journal ref: Nature Physics 11, 925 (2015)

Hidden Structural Order in Orthorhombic Tantalum Pentoxide (Ta$_2$O$_5$)

Authors: Sung-Hoon Lee, Jongseob Kim, Sae-** Kim, Sung** Kim, Gyeong-Su Park

Abstract: We investigate using first-principles calculations the atomic structure of the orthorhombic phase of Ta$_2$O$_5$. Although this structure has been studied for decades, the correct structural model is controversial owing to the complication of structural disorder. We identify a new low-energy high-symmetry structural model where all Ta and O atoms have correct formal oxidation states of +5 and -2,… ▽ More We investigate using first-principles calculations the atomic structure of the orthorhombic phase of Ta$_2$O$_5$. Although this structure has been studied for decades, the correct structural model is controversial owing to the complication of structural disorder. We identify a new low-energy high-symmetry structural model where all Ta and O atoms have correct formal oxidation states of +5 and -2, respectively, and the experimentally reported triangular lattice symmetry of the Ta sublattice appears dynamically at finite temperatures. To understand the complex atomic structure of the Ta$_2$O$_3$ plane, a triangular graph-paper representation is devised and used alongside oxidation state analysis to reveal infinite variations of the low-energy structural model. The structural disorder of Ta$_2$O$_5$ observed in experiments is attributed to the intrinsic structural variations, and oxygen vacancies that drive collective relaxation of the O sublattice. △ Less

Submitted 19 May, 2013; originally announced May 2013.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 110, 235502 (2013)

Origin of ferroelectric-like hysteresis loop of CaCu3Ti4O12 ceramic studied by impedance and micro-Raman spectroscopy

Authors: Sungmin Park, Hyosang Kwon, Doyoung Park, Hyeonsik Cheong, Gwangseo Park

Abstract: Ferroelectric-like hysteresis loops of CaCu3Ti4O12 (CCTO) ceramic have been observed. We found that this unusual feature does not arise from the displacement of the Ti ions in the TiO6 octahedron, but apparently comes from the charges at the grain boundaries which consist of a CuO layer. The relaxation time of 2.9 milliseconds by the charges from the grain boundary, nearly corresponding to the inv… ▽ More Ferroelectric-like hysteresis loops of CaCu3Ti4O12 (CCTO) ceramic have been observed. We found that this unusual feature does not arise from the displacement of the Ti ions in the TiO6 octahedron, but apparently comes from the charges at the grain boundaries which consist of a CuO layer. The relaxation time of 2.9 milliseconds by the charges from the grain boundary, nearly corresponding to the inverse P - V sampling frequency of 1kHz, has been found in the impedance spectrum. According to the micro-Raman map**, the CuO layer is found in the grain boundary and is perfectly distinguished from the CCTO grain. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Comments: 13 pages, 3 figures

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

Authors: X. Marti, B. G. Park, J. Wunderlich, H. Reichlova, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, T. Jungwirth

Abstract: We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the… ▽ More We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet. △ Less

Submitted 10 August, 2011; originally announced August 2011.

Comments: 4 pages, 5 figures

Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

Authors: B. G. Park, J. Wunderlich, X. Marti, V. Holy, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, T. Jungwirth

Abstract: Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the de… ▽ More Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and a non-magnetic metal on the other side of the tunnel barrier. FM moments in NiFe are reversed by external fields <50mT and the exchange-spring effect of NiFe on IrMn induces rotation of AFM moments in IrMn which is detected by the measured tunneling anisotropic magnetoresistance (TAMR). Our work demonstrates a spintronic element whose transport characteristics are governed by an AFM. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit coupling induced magneto-transport anisotropy using a single magnetic electrode. The AFM-TAMR provides means to study magnetic characteristics of AFM films by an electronic transport measurement. △ Less

Submitted 14 November, 2010; originally announced November 2010.

Comments: 8 pages, 4 figures

Spin Hall effect transistor

Authors: J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transis… ▽ More Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel. △ Less

Submitted 17 August, 2010; originally announced August 2010.

Comments: 11 pages, 3 figures

Spin-injection Hall effect in a planar photovoltaic cell

Authors: J. Wunderlich, A. C. Irvine, Jairo Sinova, B. G. Park, X. L. Xu, B. Kaestner, V. Novak, T. Jungwirth

Abstract: Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum… ▽ More Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal. △ Less

Submitted 21 November, 2008; originally announced November 2008.

Comments: 14 pages, 4 figures

Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

Authors: B. G. Park, J. Wunderlich, D. A. Williams, S. J. Joo, K. Y. Jung, K. H. Shin, K. Olejnik, A. B. Shick, T. Jungwirth

Abstract: We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength,… ▽ More We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems. △ Less

Submitted 8 January, 2008; originally announced January 2008.

Comments: 4 pages, 5 figures, to be published in Phys. Rev. Lett

Functionalized pentacene field-effect transistors with logic circuit applications

Authors: ** Gyu Park, Relja Vasic, James S. Brooks, John E. Anthony

Abstract: Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature and light power. The field-effect mobility ($μ$$_{\rm FET}$) has a gate-voltage dependent activation energy. A non-monotonic temperature dependence was obser… ▽ More Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature and light power. The field-effect mobility ($μ$$_{\rm FET}$) has a gate-voltage dependent activation energy. A non-monotonic temperature dependence was observed at high gate voltage (V$_G$ $<$ -30 V) with activation energy E$_a$ $\sim$ 60 - 170 meV,depending on the fabrication procedure. The gate-voltage dependent mobility and non-monotonic temperature dependence indicates that shallow traps play important role in the transport of TIPS-pentacene films. The current in the saturation regime as well as mobility increase upon light illumination and is proportional to the light intensity, mainly due to the photoconductive response. Transistors with submicron channel length showed unsaturating current-voltage characteristics due to the short channel effect. Realization of simple circuits such as NOT(inverter), NOR, and NAND logic gates are demonstrated for thin film TIPS-pentacene transistors. △ Less

Submitted 12 October, 2005; originally announced October 2005.

Comments: 16 pages, 7 figures

Photoemission Study of Rare-Earth Ditelluride Compounds (ReTe_2 : Re = La, Pr, Sm, and Gd)

Authors: Jaegwan Chung, Junghwan Park, J. G. Park, Byung-Hee Choi, S. J. Oh, E. J. Cho, H. D. Kim, Y. S. Kwon

Abstract: We studied the electronic structure of rare-earth ditelluride (ReTe_2 : Re = La, Pr, Sm, and Gd) using photoemission spectroscopy. From the x-ray photoelectron spectroscopy (XPS) study of the 3d core levels of rare-earth elements, we found that all the rare earth elements are trivalent. We have also made theoretical calculations using the Gunnarsson and Schoenhammer approximation and multiplet c… ▽ More We studied the electronic structure of rare-earth ditelluride (ReTe_2 : Re = La, Pr, Sm, and Gd) using photoemission spectroscopy. From the x-ray photoelectron spectroscopy (XPS) study of the 3d core levels of rare-earth elements, we found that all the rare earth elements are trivalent. We have also made theoretical calculations using the Gunnarsson and Schoenhammer approximation and multiplet calculations for the rare earth elements to find that the La and Gd~3d peaks are well explained using our calculations. There is no considerable change in the line-shape of the Te~3d peaks depending on different rare earth elements. On ther other hand, valence band spectra studied with the ultraviolet photoelectron spectroscopy (UPS) show a small change in the Te p band depending on rare-earth elements. According to the UPS data, LaTe_2 has very low carrier density at the Fermi level while SmTe_2 and PrTe_2 show strongly metallic band structure effects near the Fermi level. △ Less

Submitted 27 October, 1999; originally announced October 1999.

Comments: 1 tex file and 3 ps files