Showing 1–50 of 62 results for author: Park, B

Discovering one molecule out of a million: inverse design of molecular hole transporting semiconductors tailored for perovskite solar cells

Authors: Jianchang Wu, Luca Torresi, ManMan Hu, Patrick Reiser, Jiyun Zhang, Juan S. Rocha-Ortiz, Luyao Wang, Zhiqiang Xie, Kaicheng Zhang, Byung-wook Park, Anastasia Barabash, Yicheng Zhao, Junsheng Luo, Yunuo Wang, Larry Lüer, Lin-Long Deng, Jens A. Hauch, Sang Il Seok, Pascal Friederich, Christoph J. Brabec

Abstract: The inverse design of tailored organic molecules for specific optoelectronic devices of high complexity holds an enormous potential, but has not yet been realized1,2. The complexity and literally infinite diversity of conjugated molecular structures present both, an unprecedented opportunity for technological breakthroughs as well as an unseen optimization challenge. Current models rely on big dat… ▽ More The inverse design of tailored organic molecules for specific optoelectronic devices of high complexity holds an enormous potential, but has not yet been realized1,2. The complexity and literally infinite diversity of conjugated molecular structures present both, an unprecedented opportunity for technological breakthroughs as well as an unseen optimization challenge. Current models rely on big data which do not exist for specialized research films. However, a hybrid computational and high throughput experimental screening workflow allowed us to train predictive models with as little as 149 molecules. We demonstrate a unique closed-loop workflow combining high throughput synthesis and Bayesian optimization that discovers new hole transporting materials with tailored properties for solar cell applications. A series of high-performance molecules were identified from minimal suggestions, achieving up to 26.23% (certified 25.88%) power conversion efficiency in perovskite solar cells. Our work paves the way for rapid, informed discovery in vast molecular libraries, revolutionizing material selection for complex devices. We believe that our approach can be generalized to other emerging fields and indeed accelerate the development of optoelectronic semiconductor devices in general. △ Less

Submitted 30 June, 2024; originally announced July 2024.

Comments: 21 pages, 5 figures

Triple-sinusoid hedgehog lattice in a centrosymmetric Kondo metal

Authors: Soohyeon Shin, **-Hong Park, Romain Sibille, Harim Jang, Tae Beom Park, Suyoung Kim, Tian Shang, Marisa Medarde, Eric D. Bauer, Oksana Zaharko, Michel Kenzelmann, Tuson Park

Abstract: Superposed symmetry-equivalent magnetic ordering wave vectors can lead to topologically non-trivial spin textures, such as magnetic skyrmions and hedgehogs, and give rise to novel quantum phenomena due to fictitious magnetic fields associated with a non-zero Berry curvature of these spin textures. To date, all known spin textures are constructed through the superposition of multiple spiral orders,… ▽ More Superposed symmetry-equivalent magnetic ordering wave vectors can lead to topologically non-trivial spin textures, such as magnetic skyrmions and hedgehogs, and give rise to novel quantum phenomena due to fictitious magnetic fields associated with a non-zero Berry curvature of these spin textures. To date, all known spin textures are constructed through the superposition of multiple spiral orders, where spins vary in directions with constant amplitude. Recent theoretical studies have suggested that multiple sinusoidal orders, where collinear spins vary in amplitude, can construct distinct topological spin textures regarding chirality properties. However, such textures have yet to be experimentally realised. In this work, we report the observation of a zero-field magnetic hedgehog lattice from a superposition of triple sinusoidal wave vectors in the magnetically frustrated Kondo lattice CePtAl4Ge2. Notably, we also observe the emergence of anomalous electrical and thermodynamic behaviours near the field-induced transition from the zero-field topological hedgehog lattice to a non-topological sinusoidal state. These observations highlight the role of Kondo coupling in stabilising the zero-field hedgehog state in the Kondo lattice and warrant an expedited search for other topological magnetic structures coupled with Kondo coupling. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Evidence for charge delocalization crossover in the quantum critical superconductor CeRhIn$_5$

Authors: Honghong Wang, Tae Beom Park, Jihyun Kim, Harim Jang, Eric D. Bauer, Joe D. Thompson, Tuson Park

Abstract: The nature of charge degrees-of-freedom distinguishes scenarios for interpreting the character of a second order magnetic transition at zero temperature, that is, a magnetic quantum critical point (QCP). Heavy-fermion systems are prototypes of this paradigm, and in those, the relevant question is where, relative to a magnetic QCP, does the Kondo effect delocalize their $f$-electron degrees-of-free… ▽ More The nature of charge degrees-of-freedom distinguishes scenarios for interpreting the character of a second order magnetic transition at zero temperature, that is, a magnetic quantum critical point (QCP). Heavy-fermion systems are prototypes of this paradigm, and in those, the relevant question is where, relative to a magnetic QCP, does the Kondo effect delocalize their $f$-electron degrees-of-freedom. Herein, we use pressure-dependent Hall measurements to identify a finite-temperature scale $E_\text{loc}$ that signals a crossover from $f$-localized to $f$-delocalized character. As a function of pressure, $E_\text{loc}(P)$ extrapolates smoothly to zero temperature at the antiferromagnetic QCP of CeRhIn$_5$ where its Fermi surface reconstructs, hallmarks of Kondo-breakdown criticality that generates critical magnetic and charge fluctuations. In 4.4% Sn-doped CeRhIn$_5$, however, $E_\text{loc}(P)$ extrapolates into its magnetically ordered phase and is decoupled from the pressure-induced magnetic QCP, which implies a spin-density-wave (SDW) type of criticality that produces only critical fluctuations of the SDW order parameter. Our results demonstrate the importance of experimentally determining $E_\text{loc}$ to characterize quantum criticality and the associated consequences for understanding the pairing mechanism of superconductivity that reaches a maximum $T_\text{c}$ in both materials at their respective magnetic QCP. △ Less

Submitted 15 November, 2023; originally announced November 2023.

Comments: 19 pages, 5 figures, published in Nature Communications

Journal ref: Nat Commun 14, 7341 (2023)

Critical-point anomalies in doped CeRhIn5

Authors: Renjith Mathew Roy, Sudip Pal, Run Yang, Seulki Roh, Soohyeon Shin, Tae Beom Park, Tuson Park, Martin Dressel

Abstract: The heavy-fermion compound CeRhIn$_5$ can be tuned through a quantum critical point, when In is partially replaced by Sn. This way additional charge carriers are introduced and the antiferromagnetic order is gradually suppressed to zero temperature. Here we investigate the temperature-dependent optical properties of CeRh(In$_{1-x}$Sn$_x$)$_5$ single crystals for $x = 4.4\%$, $6.9\%$ and $9.8\%$. W… ▽ More The heavy-fermion compound CeRhIn$_5$ can be tuned through a quantum critical point, when In is partially replaced by Sn. This way additional charge carriers are introduced and the antiferromagnetic order is gradually suppressed to zero temperature. Here we investigate the temperature-dependent optical properties of CeRh(In$_{1-x}$Sn$_x$)$_5$ single crystals for $x = 4.4\%$, $6.9\%$ and $9.8\%$. With increasing Sn concentration the infrared conductivity reveals a clear enhancement of the $c$-$f$ hybridization strength. At low temperatures we observed a non-Fermi-liquid behavior in the frequency dependence of the scattering rate and effective mass in all three compounds. In addition, below a characteristic temperature $T^* \approx 10$ K, the temperature dependent resistivity $ρ(T)$ follows a $\log T$ behavior, typical for a non-Fermi liquid. The temperature-dependent magnetization also exhibits anomalous behavior below $T^*$. Our investigation reveal that below $T^*$ the system shows a pronounced non-Fermi-liquid behavior and $T^*$ monotonically increases as the quantum critical point is approached. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Layer-by-Layer Assembled Nanowire Networks Enable Graph Theoretical Design of Multifunctional Coatings

Authors: Wenbing Wu, Alain Kadar, Sang Hyun Lee, Bum Chul Park, Jeffery E. Raymond, Thomas K. Tsotsis, Carlos E. S. Cesnik, Sharon C. Glotzer, Valerie Goss, Nicholas A. Kotov

Abstract: Multifunctional coatings are central for information, biomedical, transportation and energy technologies. These coatings must possess hard-to-attain properties and be scalable, adaptable, and sustainable, which makes layer-by-layer assembly (LBL) of nanomaterials uniquely suitable for these technologies. What remains largely unexplored is that LBL enables computational methodologies for structural… ▽ More Multifunctional coatings are central for information, biomedical, transportation and energy technologies. These coatings must possess hard-to-attain properties and be scalable, adaptable, and sustainable, which makes layer-by-layer assembly (LBL) of nanomaterials uniquely suitable for these technologies. What remains largely unexplored is that LBL enables computational methodologies for structural design of these composites. Utilizing silver nanowires (NWs), we develop and validate a graph theoretical (GT) description of their LBL composites. GT successfully describes the multilayer structure with nonrandom disorder and enables simultaneous rapid assessment of several properties of electrical conductivity, electromagnetic transparency, and anisotropy. GT models for property assessment can be rapidly validated due to (1) quasi-2D confinement of NWs and (2) accurate microscopy data for stochastic organization of the NW networks. We finally show that spray-assisted LBL offers direct translation of the GT-based design of composite coatings to additive, scalable manufacturing of drone wings with straightforward extensions to other technologies. △ Less

Submitted 30 October, 2023; v1 submitted 23 October, 2023; originally announced October 2023.

Electrical conductivity enhancement of epitaxially grown TiN thin films

Authors: Yeong Gwang Khim, Beom** Park, ** Eun Heo, Young Hun Khim, Young Rok Khim, Minsun Gu, Tae Gyu Rhee, Seo Hyoung Chang, Moonsup Han, Young Jun Chang

Abstract: Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of sur… ▽ More Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on MgO (111), sapphire (001), and mica substrates at 640oC and room temperature by using a DC sputtering, respectively. The epitaxial films show less amount of surface oxidation than the polycrystalline ones grown at room temperature. The epitaxial films show drastically reduced resistivity (~30 micro-ohm-cm), much smaller than the polycrystalline films. Temperature-dependent resistivity measurements show a nearly monotonic temperature slope down to low temperature. These results demonstrate that high temperature growth of TiN thin films leads to significant enhancement of electrical conductivity, promising for durable and scalable electrode applications. △ Less

Submitted 22 October, 2023; originally announced October 2023.

Comments: 14 pages, 3 figures

Journal ref: Journal of the Korean Physical Society 82, 486 (2023)

Broken Kramers' degeneracy in altermagnetic MnTe

Authors: Suyoung Lee, Sangjae Lee, Saegyeol Jung, Jiwon Jung, Donghan Kim, Yeonjae Lee, Byeongjun Seok, Jaeyoung Kim, Byeong Gyu Park, Libor Šmejkal, Chang-Jong Kang, Changyoung Kim

Abstract: Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of altermagnetic phase. By combining high-quality film growth and $in~situ$ angle-resolved photoemission spectroscopy, we… ▽ More Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of altermagnetic phase. By combining high-quality film growth and $in~situ$ angle-resolved photoemission spectroscopy, we report the electronic structure of an altermagnetic candidate, $α$-MnTe. Temperature dependent study reveals the lifting of Kramers{\textquoteright} degeneracy accompanied by a magnetic phase transition at $T_N=267\text{ K}$ with spin splitting of up to $370\text{ meV}$, providing direct spectroscopic evidence for altermagnetism in MnTe. △ Less

Submitted 22 August, 2023; originally announced August 2023.

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

Authors: Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Kuan Qiao, Ki Seok Kim, Bo-In Park, Junseok Jeong, Menglin Zhu, Jun Min Suh, Yongmin Baek, You ** Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Haozhe Wang, Ling** Kong, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, **woo Hwang , et al. (4 additional authors not shown)

Abstract: Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to… ▽ More Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Direct observation of orbital driven strong interlayer coupling in puckered two-dimensional PdSe2

Authors: Jung Hyun Ryu, Jeong-Gyu Kim, Bongjae Kim, Kyoo Kim, Sooran Kim, Byeong-Gyu Park, Younghak Kim, Kyung-Tae Ko, Kimoon Lee

Abstract: Interlayer coupling between individual unit layers has played a critical role for layer-dependent properties in two-dimensional (2D) materials. While recent studies have revealed the significant degrees of interlayer interactions, the overall electronic structure of the 2D material has been mostly addressed by the intralayer interactions. Here, we report the direct observation of a highly dispersi… ▽ More Interlayer coupling between individual unit layers has played a critical role for layer-dependent properties in two-dimensional (2D) materials. While recent studies have revealed the significant degrees of interlayer interactions, the overall electronic structure of the 2D material has been mostly addressed by the intralayer interactions. Here, we report the direct observation of a highly dispersive single electronic band along the interlayer direction in puckered 2D PdSe2 as an experimental hallmark of strong interlayer couplings. Remarkably large band dispersion along kz-direction near Fermi level, which is even wider than the in-plane one, is observed by the angle-resolved photoemission spectroscopy measurement. Employing the X-ray absorption spectroscopy and density functional theory calculations, we reveal that the strong interlayer coupling in 2D PdSe2 originates from the unique directional bonding of Pd d orbitals associated with unexpected Pd 4d9 configuration, which consequently gives rise to the strong layer-dependency of the band gap. △ Less

Submitted 19 July, 2021; originally announced July 2021.

Journal ref: Small, 2022, Online Published

Semimetallic Nature and Magnetic Polarons in EuB6 Studied by Angle-Resolved Photoemission Spectroscopy

Authors: Chul-Hee Min, Boyoun Kang, Beong Ki Cho, En-** Cho, Byeong-Gyu Park, Hyeong-Do Kim

Abstract: Temperature-dependent angle-resolved photoemission spectroscopy (ARPES) was carried out on single-crystalline EuB6 samples. By measuring ARPES spectra in an extended Brillouin zone, a B 2p hole pocket centered at the X point is clearly observed, thus proving the semimetallic nature of EuB6. Below the Curie temperature TC, ARPES spectra show two B 2p bands of which separation is due to an exchange… ▽ More Temperature-dependent angle-resolved photoemission spectroscopy (ARPES) was carried out on single-crystalline EuB6 samples. By measuring ARPES spectra in an extended Brillouin zone, a B 2p hole pocket centered at the X point is clearly observed, thus proving the semimetallic nature of EuB6. Below the Curie temperature TC, ARPES spectra show two B 2p bands of which separation is due to an exchange interaction between local Eu 4f and itinerant B 2p electrons. The exchange splitting becomes smaller as the temperature increases and disappears well above TC. Additionally, a diffuse structure near the Fermi level survives just above TC. Such behavior is well described by Monte Carlo simulations of a Kondo lattice model, thus supporting the formation of magnetic polarons in EuB6, which accounts for the resistivity upturn near above TC when lowering the temperature. △ Less

Submitted 9 July, 2021; originally announced July 2021.

Comments: 6 pages, 5 figures

Journal ref: Journal of the Korean Physical Society, (2021)

Identifying intrinsic and extrinsic mechanisms of anisotropic magnetoresistance with terahertz probes

Authors: Ji-Ho Park, Hye-Won Ko, Jeong-Mok Kim, Jungmin Park, Seung-Young Park, Younghun Jo, Byong-Guk Park, Se Kwon Kim, Kyung-** Lee, Kab-** Kim

Abstract: Identifying the intrinsic and extrinsic origins of magneto-transport in spin-orbit coupled systems has long been a central theme in condensed matter physics. However, it has been elusive owing to the lack of an appropriate experimental tool. In this work, using terahertz time-domain spectroscopy, we unambiguously disentangle the intrinsic and extrinsic contributions to the anisotropic magnetoresis… ▽ More Identifying the intrinsic and extrinsic origins of magneto-transport in spin-orbit coupled systems has long been a central theme in condensed matter physics. However, it has been elusive owing to the lack of an appropriate experimental tool. In this work, using terahertz time-domain spectroscopy, we unambiguously disentangle the intrinsic and extrinsic contributions to the anisotropic magnetoresistance (AMR) of a permalloy film. We find that the scattering-independent intrinsic contribution to AMR is sizable and is as large as the scattering-dependent extrinsic contribution to AMR. Moreover, the portion of intrinsic contribution to total AMR increases with increasing temperature due to the reduction of extrinsic contribution. Further investigation reveals that the reduction of extrinsic contribution is caused by the phonon/magnon-induced negative AMR. Our result will stimulate further researches on other spin-orbit-interaction-induced phenomena for which identifying the intrinsic and extrinsic contributions is important. △ Less

Submitted 4 July, 2021; originally announced July 2021.

Long-Range Orbital Magnetoelectric Torque in Ferromagnets

Authors: Dongwook Go, Daegeun Jo, Kyoung-Whan Kim, Soogil Lee, Min-Gu Kang, Byong-Guk Park, Stefan Blügel, Hyun-Woo Lee, Yuriy Mokrousov

Abstract: While it is often assumed that the orbital response is suppressed and short-ranged due to strong crystal field potential and orbital quenching, we show that the orbital magnetoelectric response can be remarkably long-ranged in ferromagnets. In a bilayer consisting of a nonmagnet and a ferromagnet, spin injection from the interface results in spin accumulation and torque in the ferromagnet, which r… ▽ More While it is often assumed that the orbital response is suppressed and short-ranged due to strong crystal field potential and orbital quenching, we show that the orbital magnetoelectric response can be remarkably long-ranged in ferromagnets. In a bilayer consisting of a nonmagnet and a ferromagnet, spin injection from the interface results in spin accumulation and torque in the ferromagnet, which rapidly oscillate and decay by spin dephasing. In contrast, we find that even when an external electric field is applied only on the nonmagnet, we find substantially long-ranged orbital magnetoelectric response in the FM, which can go far beyond the spin dephasing length. This unusual feature is attributed to nearly degenerate orbital characters imposed by the crystal symmetry, which form hotspots for the intrinsic orbital response. Because only the states near the hotspots contribute dominantly, the induced orbital angular momentum does not exhibit destructive interference among states with different momentum as in the case of the spin dephasing. This gives rise to a distinct type of orbital torque on the magnetization, increasing with the thickness of the ferromagnet. Such behavior may serve as critical long-sought evidence of orbital transport to be directly tested in experiments. Our findings open the possibility of using long-range orbital magnetoelectric effect in orbitronic device applications. △ Less

Submitted 16 May, 2022; v1 submitted 15 June, 2021; originally announced June 2021.

Nematic response revealed by coherent phonon oscillations in BaFe$_2$As$_2$

Authors: Min-Cheol Lee, Inho Kwak, Yeongseon Lee, Bumjoo Lee, Byung Cheol Park, Thomas Wolf, Tae Won Noh, Kyungwan Kim

Abstract: We investigate coherent phonon oscillations of BaFe$_2$As$_2$ using optical pump-probe spectroscopy. Time-resolved optical reflectivity shows periodic modulations due to $A_{1g}$ coherent phonon of $c$-axis arsenic vibrations. Optical probe beams polarized along the orthorhombic $a$- and $b$-axes reveal that the initial phase of coherent oscillations shows a systematic deviation as a function of t… ▽ More We investigate coherent phonon oscillations of BaFe$_2$As$_2$ using optical pump-probe spectroscopy. Time-resolved optical reflectivity shows periodic modulations due to $A_{1g}$ coherent phonon of $c$-axis arsenic vibrations. Optical probe beams polarized along the orthorhombic $a$- and $b$-axes reveal that the initial phase of coherent oscillations shows a systematic deviation as a function of temperature, although these oscillations arise from the same $c$-axis arsenic vibrations. The oscillation-phase remains anisotropic even in the tetragonal structure, reflecting a nematic response of BaFe$_2$As$_2$. Our study suggests that investigation on the phase of coherent phonon oscillations in optical reflectivity can offer unique evidence of a nematic order strongly coupled to a lattice instability. △ Less

Submitted 15 October, 2021; v1 submitted 8 June, 2021; originally announced June 2021.

Comments: 5 pages, 4 figures

Efficient conversion of orbital Hall current to spin current for spin-orbit torque switching

Authors: Soogil Lee, Min-Gu Kang, Dongwook Go, Dohyoung Kim, Jun-Ho Kang, Taekhyeon Lee, Geun-Hee Lee, Nyun Jong Lee, Sanghoon Kim, Kab-** Kim, Kyung-** Lee, Byong-Guk Park

Abstract: Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report t… ▽ More Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current. However, orbital current cannot directly exert a torque on a ferromagnet, requiring a conversion process from orbital current to spin current. Here, we report two effective methods of the conversion through spin-orbit coupling engineering, which allows us to unambiguously demonstrate orbital-current-induced spin torque, or orbital Hall torque. We find that orbital Hall torque is greatly enhanced by introducing either a rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, indicating that the orbital current generated in Cr is efficiently converted into spin current in the Gd or Pt layer. Furthermore, we show that the orbital Hall torque can facilitate the reduction of switching current of perpendicular magnetization in spin-orbit-torque-based spintronic devices. △ Less

Submitted 3 May, 2022; v1 submitted 4 June, 2021; originally announced June 2021.

Comments: 19 pages, 3 figures

Journal ref: Communications Physics 4, 234 (2021)

Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5

Authors: Mingu Kang, Shiang Fang, Jeong-Kyu Kim, Brenden R. Ortiz, Sae Hee Ryu, Jimin Kim, Jonggyu Yoo, Giorgio Sangiovanni, Domenico Di Sante, Byeong-Gyu Park, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Efthimios Kaxiras, Stephen D. Wilson, Jae-Hoon Park, Riccardo Comin

Abstract: The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. H… ▽ More The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. Here, we combine angle-resolved photoemission spectroscopy and density functional theory to reveal multiple kagome-derived van Hove singularities (vHs) coexisting near the Fermi level of CsV3Sb5 and analyze their contribution to electronic symmetry breaking. Intriguingly, the vHs in CsV3Sb5 have two distinct flavors - p-type and m-type - which originate from their pure and mixed sublattice characters, respectively. This twofold vHs is unique property of the kagome lattice, and its flavor critically determines the pairing symmetry and ground states emerging in AV3Sb5 series. We establish that, among the multiple vHs in CsV3Sb5, the m-type vHs of the dxz/dyz kagome band and the p-type vHs of the dxy/dx2-y2 kagome band cross the Fermi level to set the stage for electronic symmetry breaking. The former band exhibits pronounced Fermi surface nesting, while the latter contributes via higher-order vHs. Our work reveals the essential role of kagome-derived vHs for the collective phenomena realized in the AV3Sb5 family, paving the way to a deeper understanding of strongly correlated topological kagome systems. △ Less

Submitted 5 November, 2021; v1 submitted 4 May, 2021; originally announced May 2021.

Comments: Submitted to Nature Physics on May 28th, 2021. A revised version will appear in Nature Physics

The oxygen partial pressure in solid oxide electrolysis cells with two layer electrolytes

Authors: Qian Zhang, Qinyuan Liu, Beom-Kyeong Park, Scott Barnett, Peter Voorhees

Abstract: A number of degradation mechanisms have been observed during the long-term operation of solid oxide electrolysis cells (SOEC). Using an electrolyte charge carrier transport model, we quantify the oxygen potentials across the electrolyte and thereby provide insights into these degradation mechanisms. Our model describes the transport of charge carriers in the electrolyte when the oxygen partial pre… ▽ More A number of degradation mechanisms have been observed during the long-term operation of solid oxide electrolysis cells (SOEC). Using an electrolyte charge carrier transport model, we quantify the oxygen potentials across the electrolyte and thereby provide insights into these degradation mechanisms. Our model describes the transport of charge carriers in the electrolyte when the oxygen partial pressure is extremely low by accounting for the spatial variation of the concentration of oxygen vacancies in the electrolyte. Moreover, we identify four quantities that characterize the distribution of oxygen partial pressure in the electrolyte, which are directly related to the degradation mechanisms in the electrolyte as well: the two oxygen partial pressures at the interfaces of the electrodes and the electrolyte, the oxygen partial pressure at the interface of YSZ/GDC, and the position of the abrupt change in oxygen potential near the p-n junction that develops in YSZ when one side of the cell is exposed to fuel (low oxygen potential, n-type conduction) and the other side is exposed to oxidant (high oxygen potential, p-type conduction). We give analytical estimates for all of these quantities. These analytical expressions provide guidance on the parameters that need to be controlled to suppress the degradation observed in the electrolyte. In addition, the effects of operating conditions, particularly current density and operating temperature, on degradation are discussed. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Ultrafast dynamics in the Lifshitz-type 5${d}$ pyrochlore antiferromagnet Cd$_{2}$Os$_{2}$O$_{7}$

Authors: Inho Kwak, Min-Cheol Lee, Byung Cheol Park, Choong H. Kim, Bumjoo Lee, C. W. Seo, J. Yamaura, Z. Hiroi, Tae Won Noh, K. W. Kim

Abstract: We investigate the ultrafast dynamics of Cd$_2$Os$_2$O$_7$, a prototype material showing a Lifshitz-type transition as a function of temperature. In the paramagnetic metallic state, the photo-reflectivity shows a sub-picosecond relaxation, followed by a featureless small offset. In the antiferromagnetic state slightly below $T_N$, however, the photo-reflectivity resurges over hundreds of picosecon… ▽ More We investigate the ultrafast dynamics of Cd$_2$Os$_2$O$_7$, a prototype material showing a Lifshitz-type transition as a function of temperature. In the paramagnetic metallic state, the photo-reflectivity shows a sub-picosecond relaxation, followed by a featureless small offset. In the antiferromagnetic state slightly below $T_N$, however, the photo-reflectivity resurges over hundreds of picoseconds, which goes beyond the usual realm of the effective-temperature model. Our observations are consistent with the Lifshitz phase transition of Cd$_2$Os$_2$O$_7$ driven by the evolution of the local magnetic moment. △ Less

Submitted 28 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 100, 144309 (2019)

Perfect optical absorption-enhanced magneto-optic Kerr effect microscopy

Authors: Dongha Kim, Young-Wan Oh, Jong-Uk Kim, Jonghwa Shin, Kab-** Kim, Byong-Guk Park, Min-Kyo Seo

Abstract: Magnetic and spintronic media have offered fundamental scientific subjects and technological applications. Magneto-optic Kerr effect (MOKE) microscopy provides the most accessible platform to study the dynamics of spins, magnetic quasi-particles, and domain walls. However, in the research of nanoscale spin textures and state-of-the-art spintronic devices, optical techniques are generally restricte… ▽ More Magnetic and spintronic media have offered fundamental scientific subjects and technological applications. Magneto-optic Kerr effect (MOKE) microscopy provides the most accessible platform to study the dynamics of spins, magnetic quasi-particles, and domain walls. However, in the research of nanoscale spin textures and state-of-the-art spintronic devices, optical techniques are generally restricted by the extremely weak magneto-optical activity and diffraction limit. Highly sophisticated, expensive electron microscopy and scanning probe methods thus have come to the forefront. Here, we show that perfect optical absorption (POA) dramatically improves the performance and functionality of MOKE microscopy. For 1-nm-thin Co film, we demonstrate a Kerr amplitude as large as 20 degree and magnetic domain imaging visibility of 0.47. Especially, POA-enhanced MOKE microscopy enables real-time detection and statistical analysis of sub-wavelength magnetic domain reversals. Furthermore, we exploit enhanced magneto-optic birefringence and demonstrate analyser-free MOKE microscopy. The POA technique is promising for optical investigations and applications of nanomagnetic systems. △ Less

Submitted 29 September, 2019; originally announced September 2019.

Comments: 14 pages, 5 figures

Report number: 11, 5937

Journal ref: Nature Communications (2020)

Evidence of structural evolution in Sr2RhO4 studied by time-resolved optical reflectivity spectroscopy

Authors: Min-Cheol Lee, Inho Kwak, Choong H. Kim, Bumjoo Lee, Byung Chul Park, Junyoung Kwon, Wonshik Kyung, Changyoung Kim, Tae Won Noh, Kyungwan Kim

Abstract: We investigate ultrafast dynamics from photoinduced reflectivity of Sr2RhO4 by using femtosecond near-infrared pulses. We observe a clear temperature-dependent anomaly in its electronic dynamics which slows down below 160 K. In addition, coherent oscillations of the A1g symmetric 5.3-THz phonon exhibit a 90-degree shift in its initial phase across TS, indicating a structural change in octahedral r… ▽ More We investigate ultrafast dynamics from photoinduced reflectivity of Sr2RhO4 by using femtosecond near-infrared pulses. We observe a clear temperature-dependent anomaly in its electronic dynamics which slows down below 160 K. In addition, coherent oscillations of the A1g symmetric 5.3-THz phonon exhibit a 90-degree shift in its initial phase across TS, indicating a structural change in octahedral rotation distortions. We propose that octahedral structure in Sr2RhO4 evolves at around TS, and it can influence on the non-equilibrium dynamics of photoinduced carriers as well as real-time phonon responses. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 100, 235139 (2019)

Revealing electrically undetectable room temperature surface-mobility of bulky topological insulators by spectroscopic techniques

Authors: Bumjoo Lee, **su Kim, Jonghyeon Kim, Na Hyun Jo, Yukiaki Ishida, So Yeun Kim, Min-Cheol Lee, Inho Kwak, Shik Shin, Kyungwan Kim, Jae Hoon Kim, Myung-Hwa Jung, Tae Won Noh, Byung Cheol Park

Abstract: High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical purposes. However, the detection of the surface-mobility has been hindered by the inevitable bulk conduction. Even in the case of high-quality crystals, the bu… ▽ More High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical purposes. However, the detection of the surface-mobility has been hindered by the inevitable bulk conduction. Even in the case of high-quality crystals, the bulk state forms the dominant channel of the electrical current. Therefore, with electrical transport measurement, the surface-mobility can be resolved only below-micrometer-thick crystals. The evaluation of the surface-mobility becomes more challenging at higher temperatures, where phonons can play a role. Here, using spectroscopic techniques, we successfully evaluated the surface-mobility of Bi2Te3 (BT) at room temperature (RT). We acquired the effective masses and mean scattering times for both the surface and bulk states using angle-resolved photoemission and terahertz time-domain spectroscopy. We revealed a record-high surface-mobility for BT, exceeding 33,000 cm^2/(Vs) per surface sheet, despite intrinsic limitations by the coexisting bulk state as well as phonons at RT. Our findings partially support the interesting conclusion that the topological protection persists at RT. Our approach could be applicable to other topological materials possessing multiband structures near the Fermi level. △ Less

Submitted 4 May, 2019; originally announced May 2019.

Role of remote interfacial phonons in the resistivity of graphene

Authors: Y. G. You, J. H. Ahn, B. H. Park, Y. Kwon, E. E. B. Campbell, S. H. Jhang

Abstract: The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfa… ▽ More The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene. △ Less

Submitted 22 March, 2019; originally announced March 2019.

Journal ref: Appl. Phys. Lett. 115, 043104 (2019)

Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms

Authors: **woong Hwang, Ji-Eun Lee, Minhee Kang, Byeong-Gyu Park, Jonathan Denlinger, Sung-Kwan Mo, Choongyu Hwang

Abstract: The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases, approaching the electron band s… ▽ More The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases, approaching the electron band structure calculated using the local density approximation method. While the former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition, the latter suggests that its electronic correlations can be modified by foreign atoms. These results pave the way for promising device applications using graphene that is semiconducting and charge neutral. △ Less

Submitted 10 October, 2018; originally announced October 2018.

Comments: 16 pages, 3 figures

Journal ref: Appl. Sci. Converg. Technol. 27, 90 (2018)

Abnormal $phase$ flip in coherent phonon oscillations of Ca$_2$RuO$_4$

Authors: Min-Cheol Lee, Choong H. Kim, Inho Kwak, J. Kim, S. Yoon, Byung Cheol Park, Bumjoo Lee, F. Nakamura, C. Sow, Y. Maeno, T. W. Noh, K. W. Kim

Abstract: We employ an optical pump-probe technique to study coherent phonon oscillations in Ca$_2$RuO$_4$. We find that oscillation-amplitude of an $A_g$ symmetric phonon mode is strongly suppressed at 260 K, a putative transition point of orbital ordering. The oscillation also shows a gradual but huge change in its $phase$, such that the oscillation even flips over with a 180$^{\circ}$ change across the t… ▽ More We employ an optical pump-probe technique to study coherent phonon oscillations in Ca$_2$RuO$_4$. We find that oscillation-amplitude of an $A_g$ symmetric phonon mode is strongly suppressed at 260 K, a putative transition point of orbital ordering. The oscillation also shows a gradual but huge change in its $phase$, such that the oscillation even flips over with a 180$^{\circ}$ change across the temperature. Density functional theory calculations indicate that the $A_g$ phonon has an eigenmode of octahedral distortion with conventional tilting along the $a$-axis and antipolar distortion of apical oxygen. Careful inspection of the lattice captures an unusually large antipolar distortion in low-temperature structures, which may play a crucial role for the phase transition at 260 K. △ Less

Submitted 17 August, 2018; originally announced August 2018.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 98, 161115 (2018)

Emergence of Kondo resonance in graphene intercalated with cerium

Authors: **woong Hwang, Kyoo Kim, Hye** Ryu, **gul Kim, Ji-Eun Lee, Sooran Kim, Minhee Kang, Byeong-Gyu Park, Alessandra Lanzara, **wook Chung, Sung-Kwan Mo, Jonathan Denlinger, Byung Il Min, Choongyu Hwang

Abstract: The interaction between a magnetic impurity, such as cerium (Ce) atom, and surrounding electrons has been one of the core problems in understanding many-body interaction in solid and its relation to magnetism. Kondo effect, the formation of a new resonant ground state with quenched magnetic moment, provides a general framework to describe many-body interaction in the presence of magnetic impurity.… ▽ More The interaction between a magnetic impurity, such as cerium (Ce) atom, and surrounding electrons has been one of the core problems in understanding many-body interaction in solid and its relation to magnetism. Kondo effect, the formation of a new resonant ground state with quenched magnetic moment, provides a general framework to describe many-body interaction in the presence of magnetic impurity. In this Letter, a combined study of angle-resolved photoemission (ARPES) and dynamic mean-field theory (DMFT) on Ce-intercalated graphene shows that Ce-induced localized states near Fermi energy, $E_{\rm F}$, hybridized with the graphene $π$ band, exhibit gradual increase in spectral weight upon decreasing temperature. The observed temperature dependence follows the expectations from the Kondo picture in the weak coupling limit. Our results provide a novel insight how Kondo physics emerges in the sea of two-dimensional Dirac electrons. △ Less

Submitted 14 June, 2018; originally announced June 2018.

Comments: 17 pages, 4 figures

Journal ref: Nano. Lett. 18, 3661 (2018)

Enhanced spin-orbit torque via interface engineering in Pt/CoFeB/MgO heterostructures

Authors: Hae-Yeon Lee, Sanghoon Kim, June-Young Park, Young-Wan Oh, Seung-Young Park, Wooseung Ham, Yoshinori Kotani, Tetsuya Nakamura, Motohiro Suzuki, Teruo Ono, Kyung-** Lee, Byong-Guk Park

Abstract: Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the charge-to-spin conversion arising from either bulk or interfacial spin-orbit interactions, or both. Here, we demonstrate that the spin-orbit torque and the resultant… ▽ More Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the charge-to-spin conversion arising from either bulk or interfacial spin-orbit interactions, or both. Here, we demonstrate that the spin-orbit torque and the resultant switching efficiency in Pt/CoFeB systems are significantly enhanced by an interfacial modification involving Ti insertion between the Pt and CoFeB layers. Spin pum** and X-ray magnetic circular dichroism experiments reveal that this enhancement is due to an additional interface-generated spin current of the nonmagnetic interface and/or improved spin transparency achieved by suppressing the proximity-induced moment in the Pt layer. Our results demonstrate that interface engineering affords an effective approach to improve spin-orbit torque and thereby magnetization switching efficiency. △ Less

Submitted 19 March, 2018; originally announced March 2018.

Complementary logic operation based on electric-field controlled spin-orbit torques

Authors: Seung-heon Chris Baek, Kyung-Woong Park, Deok-Sin Kil, Kyung-** Lee, Byong-Guk Park

Abstract: Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic gates for practical use, a complementary logic operation is essential but still missing despite a recent progress in spin-based logic devices. Here, we report the d… ▽ More Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic gates for practical use, a complementary logic operation is essential but still missing despite a recent progress in spin-based logic devices. Here, we report the development of a complementary spin logic device using electric-field controlled spin-orbit torque (SOT) switching. In heavy metal/ferromagnet/oxide structures, the critical current for SOT-induced switching of perpendicular magnetization is efficiently modulated by an electric field via voltage-controlled magnetic anisotropy (VCMA) effect in a non-volatile manner. Moreover, the polarity of the VCMA is tuned by the modification of oxidation state at the ferromagnet/oxide interface. This allows us to fabricate both n-type and p-type spin logic devices and to enable a complementary logic operation, paving the way for the development of non-volatile and reconfigurable logic devices. △ Less

Submitted 29 November, 2017; originally announced November 2017.

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers

Authors: Dong-Jun Kim, Chul-Yeon Jeon, Jong-Guk Choi, Jae Wook Lee, Srivathsava Surabhi, Jong-Ryul Jeong, Kyung-** Lee, Byong-Guk Park

Abstract: Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet (FM)/non-magnetic heavy metal (HM) bilayers… ▽ More Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet (FM)/non-magnetic heavy metal (HM) bilayers. We observe that the magnitude of transverse magnetoresistance (i.e., planar Nernst signal) in FM/HM bilayers is significantly modified by HM and its thickness. This strong dependence of transverse magnetoresistance on HM evidences the spin Nernst effect in HM; the generation of thermally-induced spin current in HM and its subsequent reflection at the FM/HM interface. Our analysis of transverse magnetoresistance shows that the spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of the spin Nernst angle would be comparable to that of the spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect. △ Less

Submitted 11 September, 2017; originally announced September 2017.

Atomically Abrupt Topological p-n Junction

Authors: Sung Hwan Kim, Kyung-Hwan **, Byung Woo Kho, Byeong-Gyu Park, Feng Liu, Jun Sung Kim, Han Woong Yeom

Abstract: Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were prop… ▽ More Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well defined topological p-n junctions with the scalability down to atomic dimensions △ Less

Submitted 23 August, 2017; originally announced August 2017.

Comments: 21 pages, 6 figures

Spin-orbit torques induced by interface-generated spin currents

Authors: Seung-heon C. Baek, Vivek P. Amin, Young-Wan Oh, Gyungchoon Go, Seung-Jae Lee, M. D. Stiles, Byong-Guk Park, Kyung-** Lee

Abstract: Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external magnetic field. One suggested approach uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of t… ▽ More Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external magnetic field. One suggested approach uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of the bottom layer. Spin currents generated in the bottom magnetic layer or its interfaces transit the spacer layer and exert a torque on the top magnetization. Here we demonstrate field-free switching in such structures and attribute it to a novel spin current generated at the interface between the bottom layer and the spacer layer. The measured torque has a distinct dependence on the bottom layer magnetization which is consistent with this interface-generated spin current but not the anticipated bulk effects. This other interface-generated spin-orbit torque will enable energy-efficient control of spintronic devices. △ Less

Submitted 22 August, 2017; originally announced August 2017.

Comments: 35 pages (main text + supplementary information)

Journal ref: Nature Materials 17, 509-513 (2018)

Charge-spin correlation in van der Waals antiferromagenet NiPS3

Authors: So Yeun Kim, Tae Yun Kim, Luke J. Sandilands, Soobin Sinn, Min-Cheol Lee, Jaeseok Son, Sungmin Lee, Ki-Young Choi, Wondong Kim, Byeong-Gyu Park, C. Jeon, Hyeong-Do Kim, Cheol-Hwan Park, Je-Geun Park, S. J. Moon, T. W. Noh

Abstract: Strong charge-spin coupling is found in a layered transition-metal trichalcogenide NiPS3, a van derWaals antiferromagnet, from our study of the electronic structure using several experimental and theoretical tools: spectroscopic ellipsometry, x-ray absorption and photoemission spectroscopy, and density-functional calculations. NiPS3 displays an anomalous shift in the optical spectral weight at the… ▽ More Strong charge-spin coupling is found in a layered transition-metal trichalcogenide NiPS3, a van derWaals antiferromagnet, from our study of the electronic structure using several experimental and theoretical tools: spectroscopic ellipsometry, x-ray absorption and photoemission spectroscopy, and density-functional calculations. NiPS3 displays an anomalous shift in the optical spectral weight at the magnetic ordering temperature, reflecting a strong coupling between the electronic and magnetic structures. X-ray absorption, photoemission and optical spectra support a self-doped ground state in NiPS3. Our work demonstrates that layered transition-metal trichalcogenide magnets are a useful candidate for the study of correlated-electron physics in two-dimensional magnetic material. △ Less

Submitted 25 June, 2017; v1 submitted 20 June, 2017; originally announced June 2017.

Comments: 6 pages, 3 figure

Journal ref: Phys. Rev. Lett. 120, 136402 (2018)

Contributions of Co and Fe orbitals to Perpendicular Magnetic Anisotropy of MgO/CoFeB Bilayers with Spin-Orbit-Torque-Related (Ta, W, IrMn, and Ti) Underlayers

Authors: Sanghoon Kim, Seung-heon Chris Baek, Mio Ishibashi, Kihiro Yamada, Takuya Taniguchi, Takaya Okuno, Yoshinori Kotani, Tetsuya Nakamura, Kab-** Kim, Takahiro Moriyama, Byong-Guk Park, Teruo Ono

Abstract: We study the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti which has been suggested as the spin-orbit-torque-related underlayers. The saturation magnetization of the CoFeB depends on the underlayer materials due to formation of a dead-layer, affecting PMA strength of each film. The x-ray magnetic circular dichroism measurement reveals that the… ▽ More We study the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti which has been suggested as the spin-orbit-torque-related underlayers. The saturation magnetization of the CoFeB depends on the underlayer materials due to formation of a dead-layer, affecting PMA strength of each film. The x-ray magnetic circular dichroism measurement reveals that the interfacial intermixing suppresses only the perpendicular orbital moment of Fe, while the intermixing simultaneously suppresses both the perpendicular and in-plane orbital moments of Co. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Element-Specific Orbital Character in a Nearly-Free-Electron Superconductor Ag$_5$Pb$_2$O$_6$ Revealed by Core-Level Photoemission

Authors: Soobin Sinn, Kyung Dong Lee, Choong Jae Won, Ji Seop Oh, Moonsup Han, Young Jun Chang, Namjung Hur, Byeong-Gyu Park, Changyoung Kim, Hyeong-Do Kim, Tae Won Noh

Abstract: Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spect… ▽ More Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spectrum, while a Ag 3$d_{5/2}$ spectrum is well explained by two symmetric peaks. The asymmetry in the Pb 4$f_{7/2}$ spectrum originates from the local attractive interaction between conducting Pb 6$s$ electrons and a Pb 4$f_{7/2}$ core hole, which implies a dominant Pb 6$s$ contribution to the metallic conduction. In addition, the observed Pb 4$f_{7/2}$ spectrum is not explained by the well-known Doniach-Šunjić lineshape for a simple metal. The spectrum is successfully generated by employing a Pb 6$s$ partial density of states from local density approximation calculations, thus confirming the Pb 6$s$ dominant character and free-electron-like density of states of Ag$_5$Pb$_2$O$_6$. △ Less

Submitted 29 March, 2017; originally announced March 2017.

Comments: 8 pages, 5 figures

Journal ref: Scientific Reports 7, 4528 (2017)

Experimental Realization of Type-II Dirac Fermions in PdTe$_2$ Superconductor

Authors: Han-** Noh, **won Jeong, En-** Cho, Kyoo Kim, B. I. Min, Byeong-Gyu Park

Abstract: A Dirac fermion in a topological Dirac semimetal is a quadruple-degenerate quasi-particle state with a relativistic linear dispersion. Breaking either time-reversal or inversion symmetry turns this system into a Weyl semimetal that hosts double-degenerate Weyl fermion states with opposite chiralities. These two kinds of quasi-particles, although described by a relativistic Dirac equation, do not n… ▽ More A Dirac fermion in a topological Dirac semimetal is a quadruple-degenerate quasi-particle state with a relativistic linear dispersion. Breaking either time-reversal or inversion symmetry turns this system into a Weyl semimetal that hosts double-degenerate Weyl fermion states with opposite chiralities. These two kinds of quasi-particles, although described by a relativistic Dirac equation, do not necessarily obey Lorentz invariance, allowing the existence of so-called type-II fermions. Recent theoretical discovery of type-II Weyl fermions evokes the prediction of type-II Dirac fermions in PtSe$_2$-type transition metal dichalcogenides, expecting an experimental confirmation. Here, we report an experimental realization of type-II Dirac fermions in PdTe$_2$ by angle-resolved photoemission spectroscopy combined with {\it ab-initio} band calculations. Our experimental finding makes the first example that has both superconductivity and type-II Dirac fermions, which turns the topological material research into a new phase. △ Less

Submitted 8 May, 2017; v1 submitted 20 December, 2016; originally announced December 2016.

Comments: 3 figures

Journal ref: Phys. Rev. Lett. 119, 016401 (2017)

Electronic Structure of the Kitaev Material $α$-$\textrm{RuCl}_3$ Probed by Photoemission and Inverse Photoemission Spectroscopies

Authors: Soobin Sinn, Choong Hyun Kim, Beom Hyun Kim, Kyung Dong Lee, Choong Jae Won, Ji Seop Oh, Moonsup Han, Young Jun Chang, Namjung Hur, Hitoshi Sato, Byeong-Gyu Park, Changyoung Kim, Hyeong-Do Kim, Tae Won Noh

Abstract: Recently, $α$-$\textrm{RuCl}_3$ has attracted much attention as a possible material realization of the honeycomb Kitaev model, which may stabilize a quantum-spin-liquid state. Compared to extensive studies on its magnetic properties, there is still a lack of understanding on its electronic structure, which is strongly related with its Kitaev physics. Here, the electronic structure of $α$-… ▽ More Recently, $α$-$\textrm{RuCl}_3$ has attracted much attention as a possible material realization of the honeycomb Kitaev model, which may stabilize a quantum-spin-liquid state. Compared to extensive studies on its magnetic properties, there is still a lack of understanding on its electronic structure, which is strongly related with its Kitaev physics. Here, the electronic structure of $α$-$\textrm{RuCl}_3$ is investigated by photoemission (PE) and inverse photoemission (IPE) spectroscopies. The band gap, directly measured from PE/IPE spectra, is found to be 1.9 eV, much larger than previous estimations. The LDA calculations show that the on-site Coulomb interaction $\textit{U}$ can open the band gap without spin-orbit coupling (SOC). However, the SOC should also be incorporated to reproduce the proper gap size, indicating that the interplay between $\textit{U}$ and SOC plays an essential role in the physics of $α$-$\textrm{RuCl}_3$. There exist some spectral features in PE/IPE spectra which cannot be explained by the LDA calculations. To explain such discrepancies, we perform the configuration-interaction calculations for a ${\textrm{RuCl}}_6^{3-}$ cluster. The experimental data and calculations demonstrate that the 4$\textit{d}$ compound $α$-$\textrm{RuCl}_3$ is a $J_{\textrm{eff}}$ = 1/2 Mott insulator rather than a quasimolecular-orbital insulator. Our study also provides important physical parameters, required in verifying the proposed Kitaev physics in $α$-$\textrm{RuCl}_3$. △ Less

Submitted 22 August, 2016; originally announced August 2016.

Comments: 22 pages, 4 figures

Journal ref: Scientific Reports 6, 39544 (2016)

Tunneling transport of mono- and few-layers magnetic van der Waals MnPS$_3$

Authors: Sungmin Lee, Ki-Young Choi, Sangik Lee, Bae Ho Park, Je-Geun Park

Abstract: We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me… ▽ More We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm. △ Less

Submitted 12 August, 2016; originally announced August 2016.

Comments: APL Mater. (in press)

Journal ref: APL Materials 4, 086108 (2016)

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

Authors: R. Galceran, I. Fina, J. Cisneros-Fernández, B. Bozzo, C. Frontera, L. López-Mir, H. Deniz, K. -W. Park, B. -G. Park, Ll. Balcells, X. Martí, T. Jungwirth, B. Martínez

Abstract: Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the li… ▽ More Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15 % has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature. △ Less

Submitted 27 July, 2016; originally announced July 2016.

Antiferromagnetic domain wall motion driven by spin-orbit torques

Authors: Takayuki Shiino, Se-Hyeok Oh, Paul M. Haney, Seo-Won Lee, Gyungchoon Go, Byong-Guk Park, Kyung-** Lee

Abstract: We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin-waves… ▽ More We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin-waves in the terahertz frequency range. The interplay between spin orbit torques and the relativistic dynamics of antiferromagnetic domain walls leads to the efficient manipulation of antiferromagnetic spin textures and paves the way for the generation of high frequency signals in antiferromagnets. △ Less

Submitted 5 April, 2016; originally announced April 2016.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 117, 087203 (2016)

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Authors: Jimin Kim, Seung Su Baik, Sae Hee Ryu, Yeongsup Sohn, Soohyung Park, Byeong-Gyu Park, Jonathan Denlinger, Yeon** Yi, Hyoung Joon Choi, Keun Su Kim

Abstract: Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface do** technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulate… ▽ More Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface do** technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices. △ Less

Submitted 22 August, 2015; originally announced August 2015.

Journal ref: Science 349, 723-726 (2015)

Electrical Control of Broadband Terahertz Wave Transmission with Two-Terminal Graphene Oxide Devices

Authors: Seungwoo Lee, Kyung Eun Lee, Won Jun Lee, Byung Cheol Park, Byungsoo Kang, Euyheon Hwang, Sang Ouk Kim

Abstract: Carbon nanomaterials such as carbon nanotubes and graphene have proved to be efficient building blocks for active optoelectronic devices. Especially, the exotic properties of crystalline graphene, such as a linear/gapless energy dispersion, offer a generic route to the development of active photonic modulator at the infrared (IR) and terahertz (THz) regime with large modulation depth. Here, we sho… ▽ More Carbon nanomaterials such as carbon nanotubes and graphene have proved to be efficient building blocks for active optoelectronic devices. Especially, the exotic properties of crystalline graphene, such as a linear/gapless energy dispersion, offer a generic route to the development of active photonic modulator at the infrared (IR) and terahertz (THz) regime with large modulation depth. Here, we show that graphene oxide (GO), an oxygenated derivative of graphene with randomly distributed molecular defects (e.g., adsorbed water molecules and punched holes), can provide a different way to effectively control broadband THz transmission amplitude, when incorporated into two-terminal electrode devices. Electrically trapped charge carriers within localized impurity states (LIS) of GO, which originate from fully randomized defective structure of GO, results in a large modulation of transmission amplitude (~30%) for broadband THz waves (0.3 ~ 2.0 THz) even at room temperature. Interesting hysteretic behavior observed in the control of broadband THz transmission further confirms the key role of trapped charge carriers in switching of broadband THz waves. The device architecture constructed by simple solution printing of GO onto the two-terminal electrode enables easy-to-implement active photonic devices. △ Less

Submitted 12 August, 2015; originally announced August 2015.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

Authors: Soonha Cho, Seung-heon Chris Baek, Younghun Jo, Byong-Guk Park

Abstract: The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetor… ▽ More The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed in manipulation of the magnetization direction by in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of the W/CoFeB/MgO structures and its correlation to the current-induced torque to the magnetization. We observe that the MR is independent of the angle between magnetization and current direction, but is determined by the relative magnetization orientation with respect to the spin direction accumulated by spin Hall effect, which is the same symmetry of so-called spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that they share the same underlying physics, which allows one to utilize the MR in non-magnet/ferromagnet structure in order to understand closely related other spin-orbit coupling effects such as inverse spin Hall effect, spin-orbit spin transfer torques, etc. △ Less

Submitted 5 May, 2015; originally announced May 2015.

Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers

Authors: Kyeong-Dong Lee, Dong-Jun Kim, Hae Yeon Lee, Seung-Hyun Kim, Jong-Hyun Lee, Kyung-Min Lee, Jong-Ryul Jeong, Ki-Suk Lee, Hyon-Seok Song, Jeong-Woo Sohn, Sung-Chul Shin, Byong-Guk Park

Abstract: The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of… ▽ More The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices. △ Less

Submitted 2 April, 2015; originally announced April 2015.

Non-destructive electron microscopy imaging and analysis of biological samples with graphene coating

Authors: Jong Bo Park, Yong-** Kim, Je Min Yoo, Youngsoo Kim, Seong-Min Kim, Sang ** Kim, Roman Gorbachev, I. I. Barbolina, Myung-Han Yoon, Byung Hee Hong, Konstantin S. Novoselov

Abstract: In electron microscopy, charging of non-conductive biological samples by focused electron beams hinders their high-resolution imaging. Gold or platinum coatings have been commonly used to prevent such sample charging, but it disables further quantitative and qualitative chemical analyses by energy dispersive spectroscopy (EDS). Here we report that graphene-coating on biological samples enables non… ▽ More In electron microscopy, charging of non-conductive biological samples by focused electron beams hinders their high-resolution imaging. Gold or platinum coatings have been commonly used to prevent such sample charging, but it disables further quantitative and qualitative chemical analyses by energy dispersive spectroscopy (EDS). Here we report that graphene-coating on biological samples enables non-destructive high-resolution imaging by scanning electron microscopy (SEM) as well as chemical analysis by EDS, utilizing graphene's transparency to electron beams, high conductivity, outstanding mechanical strength, and flexibility. We believe that the graphene-coated imaging and analysis would provide us a new opportunity to explore various biological phenomena unseen before due to the limitation in sample preparation and image resolution, which will broaden our understanding on the life mechanism of various living organisms. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

Authors: Han-** Noh, **won Jeong, En-** Cho, Joonbum Park, Jun Sung Kim, Ilyou Kim, Byeong-Gyu Park, Hyeong-Do Kim

Abstract: We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi$_2$Se$_3$ in… ▽ More We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi$_2$Se$_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings. △ Less

Submitted 8 June, 2014; originally announced June 2014.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 91, 121110 (2015)

Growth Dynamics and Gas Transport Mechanism of Nanobubbles in Graphene Liquid Cells

Authors: Dongha Shin, Jong Bo Park, Yong-** Kim, Sang ** Kim, ** Hyoun Kang, Bora Lee, Sung-Pyo Cho, Byung Hee Hong, Konstantin S. Novoselov

Abstract: Formation, evolution, and vanishing of bubbles are common phenomena in our nature, which can be easily observed in boiling or falling waters, carbonated drinks, gas-forming electrochemical reactions, etc. However, the morphology and the growth dynamics of the bubbles at nanoscale have not been fully investigated owing to the lack of proper imaging tools that can visualize nanoscale objects in liqu… ▽ More Formation, evolution, and vanishing of bubbles are common phenomena in our nature, which can be easily observed in boiling or falling waters, carbonated drinks, gas-forming electrochemical reactions, etc. However, the morphology and the growth dynamics of the bubbles at nanoscale have not been fully investigated owing to the lack of proper imaging tools that can visualize nanoscale objects in liquid phase. Here we demonstrate, for the first time, that the nanobubbles in water encapsulated by graphene membrane can be visualized by in situ ultrahigh vacuum transmission electron microscopy (UHV-TEM), showing the critical radius of nanobubbles determining its unusual long-term stability as well as two distinct growth mechanisms of merging nanobubbles (Ostwald ripening and coalescing) depending on their relative sizes. Interestingly, the gas transport through ultrathin water membranes at nanobubble interface is free from dissolution, which is clearly different from conventional gas transport that includes condensation, transmission and evaporation. Our finding is expected to provide a deeper insight to understand unusual chemical, biological and environmental phenomena where nanoscale gas-state is involved. △ Less

Submitted 7 June, 2014; originally announced June 2014.

Comments: 10 text pages, 4 figure pages, and 4 page Supplementary Information. Supplementary movies will be provided on request

Semi-Empirical Parameterization of Interatomic Interactions and Kinetics of the Atomic Ordering in Ni-Fe-C Permalloys and Elinvars

Authors: V. A. Tatarenko, S. M. Bokoch, V. M. Nadutov, T. M. Radchenko, Y. B. Park

Abstract: Within the framework of the lattice-statics and static fluctuation-wave methods, the available energies of strain-induced interaction of interstitial-interstitial, interstitial-substitutional and substitutional-substitutional impurity atomic pairs are collected and analysed for f.c.c.-(Ni,Fe)-C solutions allowing for discrete atomic structure of the host-crystal lattice. The lattice spacings, elas… ▽ More Within the framework of the lattice-statics and static fluctuation-wave methods, the available energies of strain-induced interaction of interstitial-interstitial, interstitial-substitutional and substitutional-substitutional impurity atomic pairs are collected and analysed for f.c.c.-(Ni,Fe)-C solutions allowing for discrete atomic structure of the host-crystal lattice. The lattice spacings, elasticity moduli and/or quasi-elastic force parameters of the host-crystal lattice, and concentration coefficients of the dilatation of solid-solution lattice due to the respective solutes are selected as the input numerical experimental data used. The above-mentioned interaction energies prove to have non-monotonically decreasing and anisotropic dependences on discrete interatomic radius-vector, and themselves are strong and long-range. In all f.c.c.-(Ni,Fe)-base solutions, there is strain-induced attraction in many coordination shells. In general, the strain-induced interaction between impurity atoms in gamma-Fe is weaker than in alpha-Ni. The verification of applicability of the approximation of strain-induced interaction of impurities for f.c.c.-(Ni,Fe)-C alloys showed that it must be supplemented with additional short-range (electrochemical) repulsion in the first coordination shell. Nevertheless, in any case, the strain-induced interaction of impurity atoms must be taken into account for analysis of structure and properties of f.c.c.-(Ni,Fe)-base solutions. The Monte Carlo simulation procedures applied for constitution of a nanoscale Fe-C-austenite crystallite and based on analysis of the dependences of numbers of the different atomic configurations on C-C interatomic-interaction energies reveal correlation between the potential energy of such a modeling system and the numbers of iterations as well as Monte Carlo steps for the approach to constrained equilibrium. △ Less

Submitted 1 June, 2014; originally announced June 2014.

Journal ref: Defect and Diffusion Forum, vols. 280-281, 29-78 (2008)

Ferromagnetic resonance spin pum** in CoFeB with highly resistive non-magnetic electrodes

Authors: Dong-Jun Kim, Sang-Il Kim, Seung-Young Park, Kyeong-Dong Lee, Byong-Guk Park

Abstract: The relative contribution of spin pum** and spin rectification from the ferromagnetic resonance of CoFeB/non-magnetic bilayers was investigated as a function of non-magnetic electrode resistance. Samples with highly resistive electrodes of Ta or Ti exhibit a stronger spin rectification signal, which may result in over-(or under-)estimation of the spin Hall angle of the materials, while those wit… ▽ More The relative contribution of spin pum** and spin rectification from the ferromagnetic resonance of CoFeB/non-magnetic bilayers was investigated as a function of non-magnetic electrode resistance. Samples with highly resistive electrodes of Ta or Ti exhibit a stronger spin rectification signal, which may result in over-(or under-)estimation of the spin Hall angle of the materials, while those with low resistive electrodes of Pt or Pd show the domination of the inverse spin Hall effect from spin pum**. By comparison with samples of single FM layer and an inverted structure, we provide a proper analysis method to extract spin pum** contribution. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 10 pages, 4 figures

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

Authors: X. Marti, B. G. Park, J. Wunderlich, H. Reichlova, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, T. Jungwirth

Abstract: We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the… ▽ More We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet. △ Less

Submitted 10 August, 2011; originally announced August 2011.

Comments: 4 pages, 5 figures

Hole mediated ferromagnetism in Cu-doped ZnO thin films

Authors: Abhinav Pratap Singh, B. -G. Park, Ik-Jae Lee, Kyu Joon Lee, Myung-Hwa Jung, **hee Kim, J. -Y. Kim

Abstract: We report the successful synthesis of ZnO:Cu thin films doped with holes, resulting in room temperature ferromagnetism. Hole do** is achieved by As-diffusion from the GaAs substrate into ZnO films, assisted by thermal annealing. The As-diffusion is probed with the help of x-ray absorption spectra collected at the As K-edge which show enhanced signature of diffusion in the annealed samples. Intro… ▽ More We report the successful synthesis of ZnO:Cu thin films doped with holes, resulting in room temperature ferromagnetism. Hole do** is achieved by As-diffusion from the GaAs substrate into ZnO films, assisted by thermal annealing. The As-diffusion is probed with the help of x-ray absorption spectra collected at the As K-edge which show enhanced signature of diffusion in the annealed samples. Introduction of holes, due to the As do**, in ZnO films is further evidenced by the Cu L3,2-edge spectra. XMCD and magnetic measurements show that the ferromagnetic interaction between doped Cu ions is enhanced after hole do**. △ Less

Submitted 28 June, 2011; originally announced June 2011.

Comments: 14 pages, 3 figures

Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

Authors: B. G. Park, J. Wunderlich, X. Marti, V. Holy, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, T. Jungwirth

Abstract: Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the de… ▽ More Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and a non-magnetic metal on the other side of the tunnel barrier. FM moments in NiFe are reversed by external fields <50mT and the exchange-spring effect of NiFe on IrMn induces rotation of AFM moments in IrMn which is detected by the measured tunneling anisotropic magnetoresistance (TAMR). Our work demonstrates a spintronic element whose transport characteristics are governed by an AFM. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit coupling induced magneto-transport anisotropy using a single magnetic electrode. The AFM-TAMR provides means to study magnetic characteristics of AFM films by an electronic transport measurement. △ Less

Submitted 14 November, 2010; originally announced November 2010.

Comments: 8 pages, 4 figures

Spin Hall effect transistor

Authors: J. Wunderlich, B. G. Park, A. C. Irvine, L. P. Zarbo, E. Rozkotova, P. Nemec, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transis… ▽ More Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel. △ Less

Submitted 17 August, 2010; originally announced August 2010.

Comments: 11 pages, 3 figures