Showing 1–41 of 41 results for author: Pappas, D P

Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing

Authors: Xiqiao Wang, Joel Howard, Eyob A. Sete, Greg Stiehl, Cameron Kopas, Stefano Poletto, Xian Wu, Mark Field, Nicholas Sharac, Christopher Eckberg, Hilal Cansizoglu, Raja Katta, Josh Mutus, Andrew Bestwick, Kameshwar Yadavalli, David P. Pappas

Abstract: Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaini… ▽ More Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

Authors: David P. Pappas, Mark Field, Cameron Kopas, Joel A. Howard, Xiqiao Wang, Ella Lachman, Lin Zhou, **su Oh, Kameshwar Yadavalli, Eyob A. Sete, Andrew Bestwick, Matthew J. Kramer, Joshua Y. Mutus

Abstract: We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongl… ▽ More We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics. △ Less

Submitted 26 February, 2024; v1 submitted 14 January, 2024; originally announced January 2024.

Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation

Authors: Mustafa Bal, Akshay A. Murthy, Shaojiang Zhu, Francesco Crisa, Xinyuan You, Ziwen Huang, Tanay Roy, Jaeyel Lee, David van Zanten, Roman Pilipenko, Ivan Nekrashevich, Andrei Lunin, Daniel Bafia, Yulia Krasnikova, Cameron J. Kopas, Ella O. Lachman, Duncan Miller, Josh Y. Mutus, Matthew J. Reagor, Hilal Cansizoglu, Jayss Marshall, David P. Pappas, Kim Vu, Kameshwar Yadavalli, **-Su Oh , et al. (15 additional authors not shown)

Abstract: We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati… ▽ More We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes. △ Less

Submitted 24 January, 2024; v1 submitted 25 April, 2023; originally announced April 2023.

Journal ref: npj Quantum Inf 10, 43 (2024)

Towards merged-element transmons using silicon fins: the FinMET

Authors: Aranya Goswami, Anthony P. McFadden, Tongyu Zhao, Hadass S. Inbar, Jason T. Dong, Ruichen Zhao, Corey Rae McRae, Raymond W. Simmonds, Christopher J. Palmstrøm, David P. Pappas

Abstract: A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process… ▽ More A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers. △ Less

Submitted 1 July, 2022; v1 submitted 25 August, 2021; originally announced August 2021.

Surface science motivated by heating of trapped ions from the quantum ground state

Authors: D. A. Hite, K. S. McKay, D. P. Pappas

Abstract: For the past two and a half decades, anomalous heating of trapped ions from nearby electrode surfaces has continued to demonstrate unexpected results. Caused by electric-field noise, this heating of the ions' motional modes remains an obstacle for scalable quantum computation with trapped ions. One of the anomalous features of this electric-field noise is the reported nonmonotonic behavior in the… ▽ More For the past two and a half decades, anomalous heating of trapped ions from nearby electrode surfaces has continued to demonstrate unexpected results. Caused by electric-field noise, this heating of the ions' motional modes remains an obstacle for scalable quantum computation with trapped ions. One of the anomalous features of this electric-field noise is the reported nonmonotonic behavior in the heating rate when a trap is incrementally cleaned by ion bombardment. Motivated by this result, the present work reports on a surface analysis of a sample ion-trap electrode treated similarly with incremental doses of Ar$^+$ ion bombardment. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were used to investigate how the work functions on the electrode surface vary depending on the residual contaminant coverage between each treatment. It is shown that the as-fabricated Au electrode is covered with a hydrocarbon film that is modified after the first treatment, resulting in work functions and core-level binding energies that resemble that of atomic-like carbon on Au. Changes in the spatial distribution of work functions with each treatment, combined with a suggested phenomenological coverage and surface-potential roughness dependence to the heating, appear to be related to the nonmonotonic behavior previously reported. △ Less

Submitted 3 October, 2021; v1 submitted 15 April, 2021; originally announced April 2021.

Comments: 18 pages, 6 figures. New J. Phys. (2021)

Merged-element transmon

Authors: R. Zhao, S. Park, T. Zhao, M. Bal, C. R. H. McRae, J. Long, D. P. Pappas

Abstract: Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternativ… ▽ More Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction (JJ) and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb--amorphous-Si--Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state dependent shift in the low power regime. The device also demonstrates the single- and multi-photon transitions that represent a weakly anharmonic system in the two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. A participation ratio analysis identifies the dielectric loss of the a-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence in relatively small device dimensions when implemented using a low-loss, epitaxially-grown, and lattice-matched trilayer. △ Less

Submitted 1 December, 2020; v1 submitted 17 August, 2020; originally announced August 2020.

Comments: 6 pages, 5 figures

Gate-free state preparation for fast variational quantum eigensolver simulations: ctrl-VQE

Authors: Oinam Romesh Meitei, Bryan T. Gard, George S. Barron, David P. Pappas, Sophia E. Economou, Edwin Barnes, Nicholas J. Mayhall

Abstract: The variational quantum eigensolver (VQE) is currently the flagship algorithm for solving electronic structure problems on near-term quantum computers. This hybrid quantum/classical algorithm involves implementing a sequence of parameterized gates on quantum hardware to generate a target quantum state, and then measuring the expectation value of the molecular Hamiltonian. Due to finite coherence t… ▽ More The variational quantum eigensolver (VQE) is currently the flagship algorithm for solving electronic structure problems on near-term quantum computers. This hybrid quantum/classical algorithm involves implementing a sequence of parameterized gates on quantum hardware to generate a target quantum state, and then measuring the expectation value of the molecular Hamiltonian. Due to finite coherence times and frequent gate errors, the number of gates that can be implemented remains limited on current quantum devices, preventing accurate applications to systems with significant entanglement, such as strongly correlated molecules. In this work, we propose an alternative algorithm (which we refer to as ctrl-VQE) where the quantum circuit used for state preparation is removed entirely and replaced by a quantum control routine which variationally shapes a pulse to drive the initial Hartree-Fock state to the full CI target state. As with VQE, the objective function optimized is the expectation value of the qubit-mapped molecular Hamiltonian. However, by removing the quantum circuit, the coherence times required for state preparation can be drastically reduced by directly optimizing the pulses. We demonstrate the potential of this method numerically by directly optimizing pulse shapes which accurately model the dissociation curves of the hydrogen molecule (covalent bond) and helium hydride ion (ionic bond), and we compute the single point energy for LiH with four transmons. △ Less

Submitted 10 May, 2021; v1 submitted 10 August, 2020; originally announced August 2020.

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Authors: Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae H. McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrøm

Abstract: Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconduct… ▽ More Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed. △ Less

Submitted 20 July, 2020; originally announced July 2020.

Overlap junctions for superconducting quantum electronics and amplifiers

Authors: Mustafa Bal, Junling Long, Ruichen Zhao, Haozhi Wang, Sungoh Park, Corey Rae Harrington McRae, Tongyu Zhao, Russell E. Lake, Daniil Frolov, Roman Pilipenko, Silvia Zorzetti, Alexander Romanenko, David P. Pappas

Abstract: Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This al… ▽ More Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap-junction-based Josephson parametric amplifier that uses only 2 layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss and a gain of ~ 30 dB. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance. △ Less

Submitted 21 May, 2020; originally announced May 2020.

Comments: 5 pages, 4 figures, 1 table. Submitted to Applied Physics Letters. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Amplitude and frequency sensing of microwave fields with a superconducting transmon qudit

Authors: Maximilian Kristen, Andre Schneider, Alexander Stehli, Tim Wolz, Sergey Danilin, Hsiang S. Ku, Junling Long, Xian Wu, Russell E. Lake, David P. Pappas, Alexey V. Ustinov, Martin Weides

Abstract: Experiments with superconducting circuits require careful calibration of the applied pulses and fields over a large frequency range. This remains an ongoing challenge as commercial semiconductor electronics are not able to probe signals arriving at the chip due to its cryogenic environment. Here, we demonstrate how the on-chip amplitude and frequency of a microwave signal can be inferred from the… ▽ More Experiments with superconducting circuits require careful calibration of the applied pulses and fields over a large frequency range. This remains an ongoing challenge as commercial semiconductor electronics are not able to probe signals arriving at the chip due to its cryogenic environment. Here, we demonstrate how the on-chip amplitude and frequency of a microwave signal can be inferred from the ac Stark shifts of higher transmon levels. In our time-resolved measurements we employ Ramsey fringes, allowing us to detect the amplitude of the systems transfer function over a range of several hundreds of MHz with an energy sensitivity on the order of $10^{-4}$. Combined with similar measurements for the phase of the transfer function, our sensing method can facilitate pulse correction for high fidelity quantum gates in superconducting circuits. Additionally, the potential to characterize arbitrary microwave fields promotes applications in related areas of research, such as quantum optics or hybrid microwave systems including photonic, mechanical or magnonic subsystems. △ Less

Submitted 20 May, 2020; v1 submitted 26 August, 2019; originally announced August 2019.

Comments: 11 pages, 5 figures

Journal ref: npj Quantum Inf 6, 57 (2020)

Crystallographic orientation dependence of work function: Carbon adsorption on Au surfaces

Authors: H. Z. Jooya, X. Fan, K. S. McKay, D. P. Pappas, D. A. Hite, H. R. Sadeghpour

Abstract: We investigate the work function (WF) variation of different Au crystallographic surface orientations with carbon atom adsorption. Ab-initio calculations within density-functional theory are performed on carbon deposited (100), (110), and (111) gold surfaces. The WF behavior with carbon coverage for the different surface orientations is explained by the resultant electron charge density distributi… ▽ More We investigate the work function (WF) variation of different Au crystallographic surface orientations with carbon atom adsorption. Ab-initio calculations within density-functional theory are performed on carbon deposited (100), (110), and (111) gold surfaces. The WF behavior with carbon coverage for the different surface orientations is explained by the resultant electron charge density distributions. The dynamics of carbon adsorption at sub-to-one-monolayer (ML) coverage depends on the landscape of the potential energy surfaces. At higher ML coverage, because of adsorption saturation, the WF will have weak surface orientation dependence. This systematic study has consequential bearing on studies of electric-field noise emanating from polycrystalline gold ion-trap electrodes that have been largely employed in microfabricated electrodes. △ Less

Submitted 28 February, 2019; originally announced March 2019.

Comments: 4 pages, 3 figures. arXiv admin note: text overlap with arXiv:1805.06931

Correlating decoherence in transmon qubits: Low frequency noise by single fluctuators

Authors: Steffen Schlör, Jürgen Lisenfeld, Clemens Müller, Alexander Bilmes, Andre Schneider, David P. Pappas, Alexey V. Ustinov, Martin Weides

Abstract: We report on long-term measurements of a highly coherent, non-tunable superconducting transmon qubit, revealing low-frequency burst noise in coherence times and qubit transition frequency. We achieve this through a simultaneous measurement of the qubit's relaxation and dephasing rate as well as its resonance frequency. The analysis of correlations between these parameters yields information about… ▽ More We report on long-term measurements of a highly coherent, non-tunable superconducting transmon qubit, revealing low-frequency burst noise in coherence times and qubit transition frequency. We achieve this through a simultaneous measurement of the qubit's relaxation and dephasing rate as well as its resonance frequency. The analysis of correlations between these parameters yields information about the microscopic origin of the intrinsic decoherence mechanisms in Josephson qubits. Our results are consistent with a small number of microscopic two-level systems located at the edges of the superconducting film, which is further confirmed by a spectral noise analysis. △ Less

Submitted 27 June, 2019; v1 submitted 16 January, 2019; originally announced January 2019.

Comments: 10 Pages, 6 figures

Journal ref: Phys. Rev. Lett. 123, 190502 (2019)

Active protection of a superconducting qubit with an interferometric Josephson isolator

Authors: Baleegh Abdo, Nicholas T. Bronn, Oblesh **ka, Salvatore Olivadese, Antonio D. Corcoles, Vivekananda P. Adiga, Markus Brink, Russell E. Lake, Xian Wu, David P. Pappas, Jerry M. Chow

Abstract: Nonreciprocal microwave devices play several critical roles in high-fidelity, quantum-nondemolition (QND) measurement schemes. They separate input from output, impose unidirectional routing of readout signals, and protect the quantum systems from unwanted noise originated by the output chain. However, state-of-the-art, cryogenic circulators and isolators are disadvantageous in scalable superconduc… ▽ More Nonreciprocal microwave devices play several critical roles in high-fidelity, quantum-nondemolition (QND) measurement schemes. They separate input from output, impose unidirectional routing of readout signals, and protect the quantum systems from unwanted noise originated by the output chain. However, state-of-the-art, cryogenic circulators and isolators are disadvantageous in scalable superconducting quantum processors because they use magnetic materials and strong magnetic fields. Here, we realize an active isolator formed by coupling two nondegenerate Josephson mixers in an interferometric scheme. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the Josephson mixers, which play the role of the magnetic field in a Faraday medium. To demonstrate the applicability of this Josephson-based isolator for quantum measurements, we incorporate it into the output line of a superconducting qubit, coupled to a fast resonator and a Purcell filter. We also utilize a wideband, superconducting directional coupler for coupling the readout signals into and out of the qubit-resonator system and a quantum-limited Josephson amplifier for boosting the readout fidelity. By using this novel quantum setup, we demonstrate fast, high-fidelity, QND measurements of the qubit while providing more than 20 dB of protection against amplified noise reflected off the Josephson amplifier. △ Less

Submitted 16 October, 2018; originally announced October 2018.

Journal ref: Nature Communicationsvolume 10, Article number: 3154 (2019)

Mechanisms for carbon adsorption on Au(110)-(2*1): A work function analysis

Authors: H. Z. Jooya, K. S. McKay, E. Kim, P. F. Weck, D. P. Pappas, D. A. Hite, H. R. Sadeghpour

Abstract: The variation of the work function upon carbon adsorption on the reconstructed Au(110) surface is measured experimentally and compared to density functional calculations. The adsorption dynamics is simulated with ab-initio molecular dynamics techniques. The contribution of various energetically available adsorption sites on the deposition process is analyzed, and the work function behavior with ca… ▽ More The variation of the work function upon carbon adsorption on the reconstructed Au(110) surface is measured experimentally and compared to density functional calculations. The adsorption dynamics is simulated with ab-initio molecular dynamics techniques. The contribution of various energetically available adsorption sites on the deposition process is analyzed, and the work function behavior with carbon coverage is explained by the resultant electron charge density distributions. △ Less

Submitted 17 May, 2018; originally announced May 2018.

Comments: 7 pages, 6 figures

Journal ref: Surface Science 677 (2018) 232-238

Enhanced Superconducting Transition Temperature in Electroplated Rhenium

Authors: David P. Pappas, Donald E. David, Russell E. Lake, Mustafa Bal, Ron B. Goldfarb, Dustin A. Hite, Eunja Kim, Hsiang-Sheng Ku, Junling Long, Corey Rae McRae, Lee D. Pappas, Alexana Roshko, J. G. Wen, Britton L. T. Plourde, Ilke Arslan, Xian Wu

Abstract: We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a critical temperature of approximately 6 K. Magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper crit… ▽ More We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a critical temperature of approximately 6 K. Magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper critical field on the order of 2.5 T. Critical current densities greater than 10^7 A/m^2 were measured above liquid-helium temperature. Low-loss at radio frequency was obtained below the critical temperature for multilayers deposited onto resonators made with Cu traces on commercial circuit boards. These electroplated superconducting films can be integrated into a wide range of standard components for low-temperature electronics. △ Less

Submitted 9 April, 2018; v1 submitted 6 March, 2018; originally announced March 2018.

Overlap junctions for high coherence superconducting qubits

Authors: X. Wu, J. L. Long, H. S. Ku, R. E. Lake, M. Bal, D. P. Pappas

Abstract: Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ with Ar milling bef… ▽ More Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ with Ar milling before the junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed. △ Less

Submitted 24 May, 2017; originally announced May 2017.

Comments: 4 pages, 3 figures

Measurements of trapped-ion heating rates with exchangeable surfaces in close proximity

Authors: D. A. Hite, K. S. McKay, S. Kotler, D. Leibfried, D. J. Wineland, D. P. Pappas

Abstract: Electric-field noise from the surfaces of ion-trap electrodes couples to the ion's charge causing heating of the ion's motional modes. This heating limits the fidelity of quantum gates implemented in quantum information processing experiments. The exact mechanism that gives rise to electric-field noise from surfaces is not well-understood and remains an active area of research. In this work, we de… ▽ More Electric-field noise from the surfaces of ion-trap electrodes couples to the ion's charge causing heating of the ion's motional modes. This heating limits the fidelity of quantum gates implemented in quantum information processing experiments. The exact mechanism that gives rise to electric-field noise from surfaces is not well-understood and remains an active area of research. In this work, we detail experiments intended to measure ion motional heating rates with exchangeable surfaces positioned in close proximity to the ion, as a sensor to electric-field noise. We have prepared samples with various surface conditions, characterized in situ with scanned probe microscopy and electron spectroscopy, ranging in degrees of cleanliness and structural order. The heating-rate data, however, show no significant differences between the disparate surfaces that were probed. These results suggest that the driving mechanism for electric-field noise from surfaces is due to more than just thermal excitations alone. △ Less

Submitted 17 January, 2017; originally announced January 2017.

Comments: 5 pages, 4 figures

Journal ref: MRS Advances (2017)

Theory of Multiwave Mixing within the Superconducting Kinetic-Inductance Traveling-Wave Amplifier

Authors: Robert P. Erickson, David P. Pappas

Abstract: We present a theory of parametric mixing within the coplanar waveguide (CPW) of a superconducting nonlinear kinetic-inductance traveling-wave (KIT) amplifier engineered with periodic dispersion loadings. This is done by first develo** a metamaterial band theory of the dispersion-engineered KIT using a Floquet-Bloch construction and then applying it to the description of mixing of the nonlinear R… ▽ More We present a theory of parametric mixing within the coplanar waveguide (CPW) of a superconducting nonlinear kinetic-inductance traveling-wave (KIT) amplifier engineered with periodic dispersion loadings. This is done by first develo** a metamaterial band theory of the dispersion-engineered KIT using a Floquet-Bloch construction and then applying it to the description of mixing of the nonlinear RF traveling waves. Our theory allows us to calculate signal gain vs. signal frequency in the presence of a frequency stop gap, based solely on loading design. We present results for both three-wave mixing (3WM), with applied DC bias, and four-wave mixing (4WM), without DC. Our theory predicts an intrinsic and deterministic origin to undulations of 4WM signal gain with signal frequency, apart from extrinsic sources, such as impedance mismatch, and shows that such undulations are absent from 3WM signal gain achievable with DC. Our theory is extensible to amplifiers based on Josephson junctions in a lumped LC transmission line (TWPA). △ Less

Submitted 15 February, 2017; v1 submitted 21 November, 2016; originally announced December 2016.

Comments: 52 pages, 9 figures, submitted to PRB Nov. 2016, presented at the ASC Sept. 2016

Journal ref: Phys. Rev. B 95, 104506 (2017)

Electric-field noise from carbon-adatom diffusion on a Au(110) surface: first-principles calculations and experiments

Authors: E. Kim, A. Safavi-Naini, D. A. Hite, K. S. McKay, D. P. Pappas, P. F. Weck, H. R. Sadeghpour

Abstract: The decoherence of trapped-ion quantum gates due to heating of their motional modes is a fundamental science and engineering problem. This heating is attributed to electric-field noise arising from the trap-electrode surfaces. In this work, we investigate the source of this noise by focusing on the diffusion of carbon-containing adsorbates on the surface of Au(110). We show by density functional t… ▽ More The decoherence of trapped-ion quantum gates due to heating of their motional modes is a fundamental science and engineering problem. This heating is attributed to electric-field noise arising from the trap-electrode surfaces. In this work, we investigate the source of this noise by focusing on the diffusion of carbon-containing adsorbates on the surface of Au(110). We show by density functional theory, based on detailed scanning probe microscopy, how the carbon adatom diffusion on the gold surface changes the energy landscape, and how the adatom dipole moment varies with the diffusive motion. A simple model for the diffusion noise, which varies quadratically with the variation of the dipole moment, qualitatively reproduces the measured noise spectrum, and the estimate of the noise spectral density is in accord with measured values. △ Less

Submitted 12 October, 2016; v1 submitted 4 October, 2016; originally announced October 2016.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. A 95, 033407 (2017)

Origin and Suppression of $1/f$ Magnetic Flux Noise

Authors: P. Kumar, S. Sendelbach, M. A. Beck, J. W. Freeland, Zhe Wang, Hui Wang, C. C. Yu, R. Q. Wu, D. P. Pappas, R. McDermott

Abstract: Magnetic flux noise is a dominant source of dephasing and energy relaxation in superconducting qubits. The noise power spectral density varies with frequency as $1/f^α$ with $α\sim 1$ and spans 13 orders of magnitude. Recent work indicates that the noise is from unpaired magnetic defects on the surfaces of the superconducting devices. Here, we demonstrate that adsorbed molecular O$_2$ is the domin… ▽ More Magnetic flux noise is a dominant source of dephasing and energy relaxation in superconducting qubits. The noise power spectral density varies with frequency as $1/f^α$ with $α\sim 1$ and spans 13 orders of magnitude. Recent work indicates that the noise is from unpaired magnetic defects on the surfaces of the superconducting devices. Here, we demonstrate that adsorbed molecular O$_2$ is the dominant contributor to magnetism in superconducting thin films. We show that this magnetism can be suppressed by appropriate surface treatment or improvement in the sample vacuum environment. We observe a suppression of static spin susceptibility by more than an order of magnitude and a suppression of $1/f$ magnetic flux noise power spectral density by more than a factor of 5. These advances open the door to realization of superconducting qubits with improved quantum coherence. △ Less

Submitted 4 April, 2016; originally announced April 2016.

Comments: Main text: 5 pages, 4 figures. Supplement: 8 pages, 6 figures

Journal ref: Phys. Rev. Applied 6, 041001 (2016)

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

Authors: Michael R. Vissers, Robert P. Erickson, Hsiang-Sheng Ku, Leila Vale, Xian Wu, Gene Hilton, David P. Pappas

Abstract: We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more… ▽ More We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at $\sim$20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications. △ Less

Submitted 30 September, 2015; originally announced September 2015.

Concentric transmon qubit featuring fast tunability and an anisotropic magnetic dipole moment

Authors: Jochen Braumüller, Martin Sandberg, Michael R. Vissers, Andre Schneider, Steffen Schlör, Lukas Grünhaupt, Hannes Rotzinger, Michael Marthaler, Alexander Lukashenko, Amadeus Dieter, Alexey V. Ustinov, Martin Weides, David P. Pappas

Abstract: We present a planar qubit design based on a superconducting circuit that we call concentric transmon. While employing a straightforward fabrication process using Al evaporation and lift-off lithography, we observe qubit lifetimes and coherence times in the order of 10us. We systematically characterize loss channels such as incoherent dielectric loss, Purcell decay and radiative losses. The impleme… ▽ More We present a planar qubit design based on a superconducting circuit that we call concentric transmon. While employing a straightforward fabrication process using Al evaporation and lift-off lithography, we observe qubit lifetimes and coherence times in the order of 10us. We systematically characterize loss channels such as incoherent dielectric loss, Purcell decay and radiative losses. The implementation of a gradiometric SQUID loop allows for a fast tuning of the qubit transition frequency and therefore for full tomographic control of the quantum circuit. Due to the large loop size, the presented qubit architecture features a strongly increased magnetic dipole moment as compared to conventional transmon designs. This renders the concentric transmon a promising candidate to establish a site-selective passive direct Z coupling between neighboring qubits, being a pending quest in the field of quantum simulation. △ Less

Submitted 8 February, 2018; v1 submitted 26 September, 2015; originally announced September 2015.

Comments: 6 pages + 4 pages Supplemental Material, 6 figures

Journal ref: Appl. Phys. Lett. 108, 032601 (2016)

Hotspot Relaxation Dynamics in a Current Carrying Superconductor

Authors: F. Marsili, M. J. Stevens, A. Kozorezov, V. B. Verma, Colin Lambert, J. A. Stern, R. Horansky, S. Dyer, S. Duff, D. P. Pappas, A. Lita, M. D. Shaw, R. P. Mirin, S. W. Nam

Abstract: We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation is a factor of ~ 4 slower in WSi than in NbN; (2) the hotspot relaxation time depends on bias current, and (3) the current dependence of the hotspot relaxation… ▽ More We experimentally studied the dynamics of optically excited hotspots in current carrying WSi superconducting nanowires as a function of bias current, bath temperature and excitation wavelength. We discovered that: (1) the hotspot relaxation is a factor of ~ 4 slower in WSi than in NbN; (2) the hotspot relaxation time depends on bias current, and (3) the current dependence of the hotspot relaxation time changes with temperature and wavelength. We explained all of these effects with a model based on quasi particle recombination. △ Less

Submitted 9 June, 2015; originally announced June 2015.

Journal ref: Phys. Rev. B 93, 094518 (2016)

Photon-noise limited sensitivity in titanium nitride kinetic inductance detectors

Authors: Johannes Hubmayr, Jim Beall, Dan Becker, Hsaio-Mei Cho, Mark Devlin, Bradley Dober, Chris Groppi, Gene C. Hilton, Kent D. Irwin, Dale Li, Phillip Mauskopf, Dave P. Pappas, Jeff Van Lanen, Michael R. Vissers, Yiwen Wang, Lian-Fu Wei, Jiansong Gao

Abstract: We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4~K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250~\micron. Using… ▽ More We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4~K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250~\micron. Using frequency read out and when viewing a variable temperature blackbody source, we measure device noise consistent with photon noise when the incident optical power is $>$~0.5~pW, corresponding to noise equivalent powers $>$~3$\times 10^{-17}$ W/$\sqrt{\mathrm{Hz}}$. This sensitivity makes these devices suitable for broadband photometric applications at these wavelengths. △ Less

Submitted 23 March, 2015; v1 submitted 16 June, 2014; originally announced June 2014.

Journal ref: Appl. Phys. Lett. 106, 073505 (2015)

Measuring a topological transition in an artificial spin 1/2 system

Authors: M. D. Schroer, M. H. Kolodrubetz, W. F. Kindel, M. Sandberg, J. Gao, M. R. Vissers, D. P. Pappas, Anatoli Polkovnikov, K. W. Lehnert

Abstract: We present measurements of a topological property, the Chern number ($C_\mathrm{1}$), of a closed manifold in the space of two-level system Hamiltonians, where the two-level system is formed from a superconducting qubit. We manipulate the parameters of the Hamiltonian of the superconducting qubit along paths in the manifold and extract $C_\mathrm{1}$ from the nonadiabitic response of the qubit. By… ▽ More We present measurements of a topological property, the Chern number ($C_\mathrm{1}$), of a closed manifold in the space of two-level system Hamiltonians, where the two-level system is formed from a superconducting qubit. We manipulate the parameters of the Hamiltonian of the superconducting qubit along paths in the manifold and extract $C_\mathrm{1}$ from the nonadiabitic response of the qubit. By adjusting the manifold such that a degeneracy in the Hamiltonian passes from inside to outside the manifold, we observe a topological transition $C_\mathrm{1} = 1 \rightarrow 0$. Our measurement of $C_\mathrm{1}$ is quantized to within 2 percent on either side of the transition. △ Less

Submitted 6 June, 2014; originally announced June 2014.

Comments: 5 pages, 3 figures

Ultra-Broadband Microwave Frequency-Comb Generation in Superconducting Resonators

Authors: R. P. Erickson, M. R. Vissers, M. Sandberg, S. R. Jefferts, D. P. Pappas

Abstract: We have generated frequency combs spanning 0.5 to 20 GHz in superconducting half wave resonators at T=3 K. Thin films of niobium-titanium nitride enabled this development due to their low loss, high nonlinearity, low frequency dispersion, and high critical temperature. The combs nucleate as sidebands around multiples of the pump frequency. Selection rules for the allowed frequency emission are cal… ▽ More We have generated frequency combs spanning 0.5 to 20 GHz in superconducting half wave resonators at T=3 K. Thin films of niobium-titanium nitride enabled this development due to their low loss, high nonlinearity, low frequency dispersion, and high critical temperature. The combs nucleate as sidebands around multiples of the pump frequency. Selection rules for the allowed frequency emission are calculated using perturbation theory and the measured spectrum is shown to agree with the theory. The sideband spacing is measured to be accurate to 1 part in 10 million. The sidebands coalesce into a continuous comb structure that has been observed to cover at least 6 octaves in frequency. △ Less

Submitted 2 July, 2014; v1 submitted 28 May, 2014; originally announced May 2014.

Journal ref: Phys. Rev. Lett. 113, 187002 (2014)

Superconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film

Authors: V. B. Verma, A. E. Lita, M. R. Vissers, F. Marsili, D. P. Pappas, R. P. Mirin, S. W. Nam

Abstract: We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficien… ▽ More We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficiencies (SDE) exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. △ Less

Submitted 18 February, 2014; originally announced February 2014.

Improved superconducting qubit coherence using titanium nitride

Authors: J. Chang, M. R. Vissers, A. D. Corcoles, M. Sandberg, J. Gao, David W. Abraham, Jerry M. Chow, Jay M. Gambetta, M. B. Rothwell, G. A. Keefe, Matthias Steffen, D. P. Pappas

Abstract: We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 μs by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface lo… ▽ More We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 μs by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface losses from two-level system (TLS) defects residing at or near interfaces. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators which is inconsistent with the predicted TLS model. △ Less

Submitted 17 March, 2013; originally announced March 2013.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 103, 012602 (2013)

Long-lived, radiation-suppressed superconducting quantum bit in a planar geometry

Authors: Martin Sandberg, Michael R. Vissers, Tom Ohki, Jiansong Gao, Jose Aumentado, Martin Weides, David P. Pappas

Abstract: We present a superconducting qubit design that is fabricated in a 2D geometry over a superconducting ground plane to enhance the lifetime. The qubit is coupled to a microstrip resonator for readout. The circuit is fabricated on a silicon substrate using low loss, stoichiometric titanium nitride for capacitor pads and small, shadow-evaporated aluminum/aluminum-oxide junctions. We observe qubit rela… ▽ More We present a superconducting qubit design that is fabricated in a 2D geometry over a superconducting ground plane to enhance the lifetime. The qubit is coupled to a microstrip resonator for readout. The circuit is fabricated on a silicon substrate using low loss, stoichiometric titanium nitride for capacitor pads and small, shadow-evaporated aluminum/aluminum-oxide junctions. We observe qubit relaxation and coherence times ($T_1$ and $T_2$) of 11.7 $\pm$ 0.2 $μ$s and 8.7 $\pm$ 0.3 $μ$s, respectively. Calculations show that the proximity of the superconducting plane suppresses the otherwise high radiation loss of the qubit. A significant increase in $T_1$ is projected for a reduced qubit-to-superconducting plane separation. △ Less

Submitted 8 November, 2012; originally announced November 2012.

Comments: 3 pages, 3 figures

Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

Authors: Michael R. Vissers, Jiansong Gao, Martin Sandberg, Shannon M. Duff, David S. Wisbey, Kent D. Irwin, David P. Pappas

Abstract: We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilay… ▽ More We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications. △ Less

Submitted 21 September, 2012; originally announced September 2012.

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

Authors: Michael R. Vissers, Jiansong Gao, Jeffrey S. Kline, Martin Sandberg, Martin P. Weides, David S. Wisbey, David P. Pappas

Abstract: The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric… ▽ More The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of Tc makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices. △ Less

Submitted 20 September, 2012; originally announced September 2012.

A titanium-nitride near-infrared kinetic inductance photon-counting detector and its anomalous electrodynamics

Authors: J. Gao, M. R. Visser, M. O. Sandberg, F. C. S. da Silva, S. W. Nam, D. P. Pappas, K. D. Irwin, D. S. Wisbey, E. Langman, S. R. Meeker, B. A. Mazin, H. G. Leduc, J. Zmuidzinas

Abstract: We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductance detectors. Energy resolution of 0.4 eV and arrival-time resolution of 1.2 microseconds are achieved. 0-, 1-, 2-photon events are resolved and shown to follow Poisson statistics. We find that the temperature-dependent frequency shift deviates from the Mattis-Bardeen theory, and the dissipation… ▽ More We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductance detectors. Energy resolution of 0.4 eV and arrival-time resolution of 1.2 microseconds are achieved. 0-, 1-, 2-photon events are resolved and shown to follow Poisson statistics. We find that the temperature-dependent frequency shift deviates from the Mattis-Bardeen theory, and the dissipation response shows a shorter decay time than the frequency response at low temperatures. We suggest that the observed anomalous electrodynamics may be related to quasiparticle traps or subgap states in the disordered TiN films. Finally, the electron density-of-states is derived from the pulse response. △ Less

Submitted 3 August, 2012; originally announced August 2012.

Comments: 4 pages, 3 figures

Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

Authors: Martin Sandberg, Michael R. Vissers, Jeffrey S. Kline, Martin Weides, Jiansong Gao, David S. Wisbey, David P. Pappas

Abstract: We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples show… ▽ More We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators △ Less

Submitted 14 May, 2012; originally announced May 2012.

Journal ref: Appl. Phys. Lett. 100, 262605 (2012)

Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

Authors: Michael R. Vissers, Martin P. Weides, Jeffrey S. Kline, Martin O. Sandberg, David P. Pappas

Abstract: We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as… ▽ More We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature. △ Less

Submitted 22 March, 2012; originally announced March 2012.

Comments: 10 pages, 5 figures

Coherence in a transmon qubit with epitaxial tunnel junctions

Authors: Martin P. Weides, Jeffrey S. Kline, Michael R. Vissers, Martin O. Sandberg, David S. Wisbey, Blake R. Johnson, Thomas A. Ohki, David P. Pappas

Abstract: We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-l… ▽ More We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements. △ Less

Submitted 9 December, 2011; v1 submitted 21 November, 2011; originally announced November 2011.

Journal ref: Appl. Phys. Lett. 99, 262502 (2011)

Sub-micrometer epitaxial Josephson junctions for quantum circuits

Authors: Jeffrey S. Kline, Michael R. Vissers, Fabio C. S. da Silva, David S. Wisbey, Martin Weides, Terence J. Weir, Benjamin Turek, Danielle A. Braje, William D. Oliver, Yoni Shalibo, Nadav Katz, Blake R. Johnson, Thomas A. Ohki, David P. Pappas

Abstract: We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top e… ▽ More We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance. △ Less

Submitted 22 November, 2011; v1 submitted 8 August, 2011; originally announced August 2011.

Journal ref: Supercond. Sci. Technol. 25 (2012) 025005

Remote Sensing and Control of Phase Qubits

Authors: Dale Li, Fabio C. S. da Silva, Danielle A. Braje, Raymond W. Simmonds, David P. Pappas

Abstract: We demonstrate a remote sensing design of phase qubits by separating the control and readout circuits from the qubit loop. This design improves measurement reliability because the control readout chip can be fabricated using more robust materials and can be reused to test different qubit chips. Typical qubit measurements such as Rabi oscillations, spectroscopy, and excited-state energy relaxation… ▽ More We demonstrate a remote sensing design of phase qubits by separating the control and readout circuits from the qubit loop. This design improves measurement reliability because the control readout chip can be fabricated using more robust materials and can be reused to test different qubit chips. Typical qubit measurements such as Rabi oscillations, spectroscopy, and excited-state energy relaxation are presented. △ Less

Submitted 5 October, 2010; originally announced October 2010.

Comments: 3 pages, 4 figures

Journal ref: Applied Physics Letters 97, 102507 (2010)

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Authors: Michael R. Vissers, Jiansong Gao, David S. Wisbey, Dustin A. Hite, Chang C. Tsuei, Antonio D. Corcoles, Matthias Steffen, David P. Pappas

Abstract: Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) hig… ▽ More Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$'s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $\approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8\times10^5$, while thicker SiN buffer layers led to reduced $Q_i$'s at low power. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: Submitted to APL July 2010

Decoherence in Josephson Qubits from Dielectric Loss

Authors: John M. Martinis, K. B. Cooper, R. McDermott, Matthias Steffen, Markus Ansmann, K. Osborn, K. Cicak, S. Oh, D. P. Pappas, R. W. Simmonds, clare C. Yu

Abstract: Dielectric loss from two-level states is shown to be a dominant decoherence source in superconducting quantum bits. Depending on the qubit design, dielectric loss from insulating materials or the tunnel junction can lead to short coherence times. We show that a variety of microwave and qubit measurements are well modeled by loss from resonant absorption of two-level defects. Our results demonstr… ▽ More Dielectric loss from two-level states is shown to be a dominant decoherence source in superconducting quantum bits. Depending on the qubit design, dielectric loss from insulating materials or the tunnel junction can lead to short coherence times. We show that a variety of microwave and qubit measurements are well modeled by loss from resonant absorption of two-level defects. Our results demonstrate that this loss can be significantly reduced by using better dielectrics and fabricating junctions of small area $\lesssim 10 μ\textrm{m}^2$. With a redesigned phase qubit employing low-loss dielectrics, the energy relaxation rate has been improved by a factor of 20, opening up the possibility of multi-qubit gates and algorithms. △ Less

Submitted 26 July, 2005; originally announced July 2005.

Comments: shortened version submitted to PRL

Observation of quantum oscillations between a Josephson phase qubit and a microscopic resonator using fast readout

Authors: K. B. Cooper, Matthias Steffen, R. McDermott, R. W. Simmonds, Seongshik Oh, D. A. Hite, D. P. Pappas, John M. Martinis

Abstract: We have detected coherent quantum oscillations between Josephson phase qubits and microscopic critical-current fluctuators by implementing a new state readout technique that is an order of magnitude faster than previous methods. The period of the oscillations is consistent with the spectroscopic splittings observed in the qubit's resonant frequency. The results point to a possible mechanism for… ▽ More We have detected coherent quantum oscillations between Josephson phase qubits and microscopic critical-current fluctuators by implementing a new state readout technique that is an order of magnitude faster than previous methods. The period of the oscillations is consistent with the spectroscopic splittings observed in the qubit's resonant frequency. The results point to a possible mechanism for decoherence and reduced measurement fidelity in superconducting qubits and demonstrate the means to measure two-qubit interactions in the time domain. △ Less

Submitted 31 May, 2004; originally announced May 2004.

Decoherence in Josephson Qubits from Junction Resonances

Authors: R. W. Simmonds, K. M. Lang, D. A. Hite, D. P. Pappas, John M. Martinis

Abstract: Although Josephson junction qubits show great promise for quantum computing, the origin of dominant decoherence mechanisms remains unknown. We report Rabi oscillations for an improved phase qubit, and show that their coherence amplitude is significantly degraded by spurious microwave resonators. These resonators arise from changes in the junction critical current produced by two-level states in… ▽ More Although Josephson junction qubits show great promise for quantum computing, the origin of dominant decoherence mechanisms remains unknown. We report Rabi oscillations for an improved phase qubit, and show that their coherence amplitude is significantly degraded by spurious microwave resonators. These resonators arise from changes in the junction critical current produced by two-level states in the tunnel barrier. The discovery of these high frequency resonators impacts the future of all Josephson qubits as well as existing Josephson technologies. We predict that removing or reducing these resonators through materials research will improve the coherence of all Josephson qubits. △ Less

Submitted 18 February, 2004; originally announced February 2004.

Comments: Submitted to Physical Review Letters