Showing 1–50 of 52 results for author: Pantelides, S T

Decoupled few-femtosecond phase transitions in vanadium dioxide

Authors: Christian Brahms, Lin Zhang, Xiao Shen, Utso Bhattacharya, Maria Recasens, Johann Osmond, Tobias Grass, Ravindra W. Chhajlany, Kent A. Hallman, Richard F. Haglund, Sokrates T. Pantelides, Maciej Lewenstein, John C. Travers, Allan S. Johnson

Abstract: The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily driven by the electronic or structural degree of freedom, but measurements to date have been stymied by their sensitivity to only one of these components and/or… ▽ More The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily driven by the electronic or structural degree of freedom, but measurements to date have been stymied by their sensitivity to only one of these components and/or their limited temporal resolution. Here we use ultra-broadband few-femtosecond pump-probe spectroscopy to resolve the electronic and structural phase transitions in VO2 at their fundamental time scales. We find that the system transforms into a bad-metallic phase within 10 fs after photoexcitation, but requires another 100 fs to complete the transition, during which we observe electronic oscillations and a partial re-opening of the bandgap, signalling a transient semi-metallic state. Comparisons with tensor-network simulations and density-functional theory calculations show these features originate from oscillations around the equilibrium high-symmetry atomic positions during an unprecedentedly fast structural transition, in which the vanadium dimers separate and untwist with two different timescales. Our results resolve the complete structural and electronic nature of the light-induced phase transition in VO2 and establish ultra-broadband few-femtosecond spectroscopy as a powerful new tool for studying quantum materials out of equilibrium. △ Less

Submitted 5 February, 2024; v1 submitted 2 February, 2024; originally announced February 2024.

Comments: 20 pages, 12 figures

Engineering strong magnetoelectricity using a hexagonal 2D material on electron-doped hexagonal LuFeO$_3$

Authors: M. J. Swamynadhan, Andrew O'Hara, Saurabh Ghosh, Sokrates T. Pantelides

Abstract: Cubic perovskite-structure ABO$_3$ and A$_{1-x}$A$^{\prime}$$_x$BO$_3$-type oxides have been investigated extensively while their hexagonal-structure versions have received minimal attention, even though they are multiferroic and can form heterostructures with the manifold hexagonal two-dimensional materials. Hexagonal ferrites of the form RFeO$_3$, where R is yttrium or a rare-earth element such… ▽ More Cubic perovskite-structure ABO$_3$ and A$_{1-x}$A$^{\prime}$$_x$BO$_3$-type oxides have been investigated extensively while their hexagonal-structure versions have received minimal attention, even though they are multiferroic and can form heterostructures with the manifold hexagonal two-dimensional materials. Hexagonal ferrites of the form RFeO$_3$, where R is yttrium or a rare-earth element such as Lu, Yb, etc., feature coupled ferroelectricity (FE) and weak-ferromagnetism (wFM), exhibiting linear magnetoelectricity. Their only drawback is weak ferromagnetism. In this paper, we employ density-functional-theory (DFT) calculations on hexagonal LuFeO$_3$ ($h$-LFO), targeting its magnetic ordering by electron do**,anticipating spin-disproportionation of the Fe sublattices. Indeed, we show that spin-disproportionation in heavily-electron-doped versions Lu$_{1-x}$Hf$_x$FeO$_3$ ($h$-LHFO), especially for x=1/3 and 1/2, leads to robust out-of-plane collinear ferrimagnetism that is stable at room temperature. Furthermore, the robust ferroelectricity of $h$-LFO persists via a Jahn-Teller metal-to-insulator transition. Finally, we construct a $h$-LHFO/$h$-2D heterostructure, where $h$-2D stands for the FE/FM monolayer MnSTe, and demonstrate strong magnetoelectric coupling, namely manipulation of magnetic skyrmions in MnSTe by an external electric field through the $h$-LHFO polarization, opening up a new realm for magnetoelectric applications. △ Less

Submitted 26 January, 2024; originally announced January 2024.

Ruddlesden-Popper chalcogenides push the limit of mechanical stiffness and glass-like thermal conductivity in crystals

Authors: Md Shafkat Bin Hoque, Eric R. Hoglund, Boyang Zhao, De-Liang Bao, Hao Zhou, Sandip Thakur, Eric Osei-Agyemang, Khalid Hattar, Ethan A. Scott, Mythili Surendran, John A. Tomko, John T. Gaskins, Kiumars Aryana, Sara Makarem, Ganesh Balasubramanian, Ashutosh Giri, Tianli Feng, Jordan A. Hachtel, Jayakanth Ravichandran, Sokrates T. Pantelides, Patrick E. Hopkins

Abstract: Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded… ▽ More Insulating materials featuring ultralow thermal conductivity for diverse applications also require robust mechanical properties. Conventional thinking, however, which correlates strong bonding with high atomic-vibration-mediated heat conduction, led to diverse weakly bonded materials that feature ultralow thermal conductivity and low elastic moduli. One must, therefore, search for strongly-bonded materials in which heat transport is impeded by other means. Here, we report intrinsic, glass-like, ultralow thermal conductivity and ultrahigh elastic-modulus/thermal-conductivity ratio in single-crystalline, BaZrS3-derived, Ruddlesden-Popper phases Ban+1ZrnS3n+1, n = 2, 3. Their key features are strong anharmonicity and intra-unit-cell rock-salt blocks. The latter produce strongly bonded intrinsic superlattices, impeding heat conduction by broadband reduction of phonon velocities and mean free paths and concomitant strong phonon localization. The present study initiates a paradigm of "mechanically stiff phonon glasses". △ Less

Submitted 5 December, 2023; originally announced December 2023.

High-temperature phonons in h-BN: momentum-resolved vibrational spectroscopy and theory

Authors: Andrew O'Hara, Benjamin Plotkin-Swing, Niklas Dellby, Juan Carlos Idrobo, Ondrej L. Krivanek, Tracy C. Lovejoy, Sokrates T. Pantelides

Abstract: Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic atomic displacements, which leads to new phenomena such as thermal expansion and multiphonon scattering processes, with a profound impact on temperature-dependent material properties including thermal conductivity, phonon lifetimes, nonradiative electronic transitions, and phase transitions. Nanoscale… ▽ More Vibrations in materials and nanostructures at sufficiently high temperatures result in anharmonic atomic displacements, which leads to new phenomena such as thermal expansion and multiphonon scattering processes, with a profound impact on temperature-dependent material properties including thermal conductivity, phonon lifetimes, nonradiative electronic transitions, and phase transitions. Nanoscale momentum-resolved vibrational spectroscopy, which has recently become possible on monochromated scanning-transmission-electron microscopes, is a unique method to probe the underpinnings of these phenomena. Here we report momentum-resolved vibrational spectroscopy in hexagonal boron nitride at temperatures of 300, 800, and 1300 K across three Brillouin zones (BZs) that reveals temperature-dependent phonon energy shifts and demonstrates the presence of strong Umklapp processes. Density-functional-theory calculations of temperature-dependent phonon self-energies reproduce the observed energy shifts and identify the contributing mechanisms. △ Less

Submitted 13 November, 2023; v1 submitted 20 October, 2023; originally announced October 2023.

Comments: 21 pages, 4 figures, 2 tables, 3 supplemental figures, 3 supplemental tables

Phonon vortices at heavy impurities in two-dimensional materials

Authors: De-Liang Bao, Mingquan Xu, Ao-Wen Li, Gang Su, Wu Zhou, Sokrates T. Pantelides

Abstract: The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the discovery of phonon vortices at heavy impurities in two-dimensional materials. We use density-functional-theory calculations for two configurations of Si impurities… ▽ More The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the discovery of phonon vortices at heavy impurities in two-dimensional materials. We use density-functional-theory calculations for two configurations of Si impurities in graphene, Si-C3 and Si-C4, to examine atom-projected phonon densities of states and display the atomic-displacement patterns for select modes that are dominated by impurity displacements. The vortices are driven by large displacements of the impurities, and reflect local symmetries. Similar vortices are found at phosphorus impurities in hexagonal boron nitride, suggesting that they may be a feature of heavy impurities in crystalline materials. Phonon vortices at defects are expected to play a role in thermal conductivity and other properties. △ Less

Submitted 12 October, 2023; originally announced October 2023.

Structure and mechanical properties of monolayer amorphous carbon and boron nitride

Authors: Xi Zhang, Yu-Tian Zhang, Yun-Peng Wang, Shiyu Li, Shixuan Du, Yu-Yang Zhang, Sokrates T. Pantelides

Abstract: Amorphous materials exhibit various characteristics that are not featured by crystals and can sometimes be tuned by their degree of disorder (DOD). Here, we report results on the mechanical properties of monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (maBN) with different DOD. The pertinent structures are obtained by kinetic-Monte-Carlo (kMC) simulations using machine-learn… ▽ More Amorphous materials exhibit various characteristics that are not featured by crystals and can sometimes be tuned by their degree of disorder (DOD). Here, we report results on the mechanical properties of monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (maBN) with different DOD. The pertinent structures are obtained by kinetic-Monte-Carlo (kMC) simulations using machine-learning potentials (MLP) with density-functional-theory (DFT)-level accuracy. An intuitive order parameter, namely the areal fraction Fx occupied by crystallites within the continuous random network, is proposed to describe the DOD. We find that Fx captures the essence of the DOD: Samples with the same Fx but different sizes and distributions of crystallites have virtually identical radial distributions functions as well as bond-length and bond-angle distributions. Furthermore, by simulating the fracture process with molecular dynamics, we found that the mechanical responses of MAC and maBN before fracture are solely determined by Fx and are insensitive to the sizes and specific arrangements of the crystallites. The behavior of cracks in the two materials is analyzed and found to mainly propagate in meandering paths in the CRN region and to be influenced by crystallites in distinct ways that toughen the material. The present results reveal the relation between structure and mechanical properties in amorphous monolayers and may provide a universal toughening strategy for 2D materials. △ Less

Submitted 26 September, 2023; originally announced September 2023.

A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors

Authors: Dallin O. Nielsen, Chris G. Van de Walle, Sokrates T. Pantelides, Ronald D. Schrimpf, Daniel M. Fleetwood, Massimo V. Fischetti

Abstract: The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-d… ▽ More The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm. △ Less

Submitted 7 August, 2023; originally announced August 2023.

Comments: 23 pages, 20 figures. This LaTex file uses RevTex4.2 from APS

Direct Visualization of Localized Vibrations at Complex Grain Boundaries

Authors: Eric R. Hoglund, De-Liang Bao, Andrew O'Hara, Thomas W. Pfeifer, Md Shafkat Bin Hoque, Sara Makarem, James M. Howe, Sokrates T. Pantelides, Patrick E. Hopkins, Jordan A. Hachtel

Abstract: Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical,… ▽ More Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical, and thermal properties. Here, we examine a SrTiO3 GB using atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) and ultra-high-energy-resolution monochromated electron energy-loss spectroscopy (EELS), in conjunction with density functional theory (DFT) calculations. This combination enables the direct correlation of the GB structure, composition, and chemical bonding with atomic vibrations within the GB dislocation-cores. We observe that nonstoichiometry and changes in coordination and bonding at the GB leads to a redistribution of vibrational states at the GB and its dislocation-cores relative to the bounding grains. The access to localized vibrations within GBs provided by ultrahigh spatial/spectral resolution EELS correlated with atomic coordination, bonding, and stoichiometry and validated by theory, provides a direct route to quantifying the impact of individual boundaries on macroscopic properties. △ Less

Submitted 24 August, 2022; v1 submitted 30 July, 2022; originally announced August 2022.

Comments: 41 pages, 15 figures

Strong and tunable magnetoelectric coupling in 2D trilayer heterostructures

Authors: Xin **, Andrew O'Hara, Yu-Yang Zhang, Shixuan Du, Sokrates T. Pantelides

Abstract: The quest for electric-field control of nanoscale magnetic states such as skyrmions, which would impact the field of spintronics, has led to a challenging search for multiferroic materials or structures with strong magnetoelectric coupling and efficient electric-field control. Here we report a theoretical prediction that such phenomena can be realized in two-dimensional (2D) bilayer FE/PMM and tri… ▽ More The quest for electric-field control of nanoscale magnetic states such as skyrmions, which would impact the field of spintronics, has led to a challenging search for multiferroic materials or structures with strong magnetoelectric coupling and efficient electric-field control. Here we report a theoretical prediction that such phenomena can be realized in two-dimensional (2D) bilayer FE/PMM and trilayer FE/PMM/FE heterostructures (two-terminal and three-terminal devices), where FE is a 2D ferroelectric and PMM is a polar magnetic metal with strong spin-orbit coupling. Such a PMM has strong Dzyaloshinskii-Moriya interactions (DMI) that can generate skyrmions, while the FE can generate strong magnetoelectric coupling through polarization-polarization interactions. In trilayer heterostructures, contact to the metallic PMM layer enables multiple polarization configurations for electric-field control of skyrmions. We report density-functional-theory calculations for particular material choices that demonstrate the effectiveness of these arrangements, with the key driver being the polarization-polarization interactions between the PMM and FE layers. The present findings provide a method to achieve strong magnetoelectric coupling in the 2D limit and a new perspective for the design of related spintronics. △ Less

Submitted 18 October, 2022; v1 submitted 2 March, 2022; originally announced March 2022.

The origin of insulating and non-ferromagnetic SrRuO3 monolayers

Authors: Zeeshan Ali, Zhen Wang, Andrew O'Hara, Mohammad Saghayezhian, Donghan Shin, Yimei Zhu, Sokrates T. Pantelides, Jiandi Zhang

Abstract: The electro-magnetic properties of ultrathin epitaxial ruthenate films have long been the subject of debate. Here we combine experimental with theoretical investigations of (SrTiO3)5-(SrRuO3)n-(SrTiO3)5 (STO5-SROn-STO5) heterostructures with n = 1 and 2 unit cells, including extensive atomic-resolution scanning-transmission-electron-microscopy imaging, electron-energy-loss-spectroscopy chemical ma… ▽ More The electro-magnetic properties of ultrathin epitaxial ruthenate films have long been the subject of debate. Here we combine experimental with theoretical investigations of (SrTiO3)5-(SrRuO3)n-(SrTiO3)5 (STO5-SROn-STO5) heterostructures with n = 1 and 2 unit cells, including extensive atomic-resolution scanning-transmission-electron-microscopy imaging, electron-energy-loss-spectroscopy chemical map**, as well as transport and magneto-transport measurements. The experimental data demonstrate that the STO5-SRO2-STO5 heterostructure is stoichiometric, metallic, and ferromagnetic with TC ~ 128 K, even though it lacks the characteristic bulk-SRO octahedral tilts and matches the cubic STO structure. In contrast, the STO5-SRO1-STO5 heterostructure features Ru-Ti intermixing in the RuO2 layer, also without octahedral tilts, but is accompanied by a loss of metallicity and ferromagnetism. Density-functional-theory calculations show that stoichiometric n = 1 and n = 2 heterostructures are metallic and ferromagnetic with no octahedral tilts, while non-stoichiometry in the Ru sublattice in the n = 1 case opens an energy gap and induces antiferromagnetic ordering. Thus, the results indicate that the observed non-stoichiometry is the cause of the observed loss of metallicity and ferromagnetism in the n = 1 case. △ Less

Submitted 19 December, 2021; originally announced December 2021.

Comments: 20 pages, 9 figures

Journal ref: Phys. Rev. B 105, 054429 (2022)

Thermal transport of amorphous carbon and boron-nitride monolayers

Authors: Yu-Tian Zhang, Yun-Peng Wang, Yu-Yang Zhang, Shixuan Du, Sokrates T. Pantelides

Abstract: Two-dimensional (2D) materials like graphene and h-BN usually show high thermal conductivity, which enables rich applications in thermal dissipation and nanodevices. Disorder, on the other hand, is often present in 2D materials. Structural disorder induces localization of electrons and phonons and alters the electronic, mechanical, thermal, and magnetic properties. Here we calculate the in-plane t… ▽ More Two-dimensional (2D) materials like graphene and h-BN usually show high thermal conductivity, which enables rich applications in thermal dissipation and nanodevices. Disorder, on the other hand, is often present in 2D materials. Structural disorder induces localization of electrons and phonons and alters the electronic, mechanical, thermal, and magnetic properties. Here we calculate the in-plane thermal conductivity of both monolayer carbon and monolayer boron nitride in the amorphous form, by reverse nonequilibrium molecular dynamics simulations. We find that the thermal conductivity of both monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (ma-BN) are about two orders of magnitude smaller than their crystalline counterparts. Moreover, the ultralow thermal conductivity is independent of the temperature due to the extremely short phonon mean free path in these amorphous materials. The relation between the structure disorder and the reduction of the thermal conductivity is analyzed in terms of the vibrational density of states and the participation ratio. ma-BN shows strong vibrational localization across the frequency range, while MAC exhibits a unique extended G' mode at high frequency due to its sp2 hybridization and the broken E2g symmetry. The present results pave the way for potential applications of MAC and ma-BN in thermal management. △ Less

Submitted 10 December, 2021; v1 submitted 16 October, 2021; originally announced October 2021.

Comments: 18 pages, 6 figures and 4 extended figures

Journal ref: Appl. Phys. Lett. 120, 222201 (2022)

Ionic control over ferroelectricity in 2D layered van der Waals capacitors

Authors: Sabine M. Neumayer, Mengwei Si, Junkang Li, Pai-Ying Liao, Lei Tao, Andrew O'Hara, Sokrates T. Pantelides, Peide D. Ye, Petro Maksymovych, Nina Balke

Abstract: The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneo… ▽ More The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically controlled ferroelectric behavior, achieved by applying selected DC voltage pulses and subsequently probing ferroelectric switching during fast triangular voltage sweeps. Using current measurements and theoretical calculations, we observe that increasing DC pulse duration results in higher ionic currents, the build-up of an internal electric field that shifts polarization loops, and an increase in total switchable polarization by ~50% due to the existence of a high polarization phase which is stabilized by the internal electric field. Apart from tuning ferroelectric behavior by selected square pulses, hysteretic polarization switching can even be entirely deactivated and reactivated, resulting in three-state systems where polarization switching is either inhibited or can be performed in two different directions. △ Less

Submitted 19 January, 2022; v1 submitted 27 September, 2021; originally announced September 2021.

Journal ref: ACS Appl. Mater. Interfaces 2022, 14, 2, 3018-3026

Unique features of polarization in ferroelectric ionic conductors

Authors: Andrew O'Hara, Nina Balke, Sokrates T. Pantelides

Abstract: Ferroelectrics that are also ionic conductors offer possibilities for novel applications with high tunability, especially if the same atomic species causes both phenomena. In particular, at temperatures just below the Curie temperature, polarized states may be sustainable as the mobile species is driven in a controlled way over the energy barrier that governs ionic conduction, resulting in unique… ▽ More Ferroelectrics that are also ionic conductors offer possibilities for novel applications with high tunability, especially if the same atomic species causes both phenomena. In particular, at temperatures just below the Curie temperature, polarized states may be sustainable as the mobile species is driven in a controlled way over the energy barrier that governs ionic conduction, resulting in unique control of the polarization. This possibility was recently demonstrated in CuInP2S6, a layered ferroelectric ionic conductor in which Cu ions cause both ferroelectricity and ionic conduction. Here, we show that the commonly used approach to calculate the polarization of evolving atomic configurations in ferroelectrics using the modern theory of polarization, namely concerted (synchronous) migration of the displacing ions, is not well suited to describe the polarization evolution as the Cu ions cross the van der Waals gaps. We introduce an asynchronous Cu-migration scheme, which reflects the physical process by which Cu ions migrate, resolves the difficulties, and describes the polarization evolution both for normal ferroelectric switching and for transitions across the van der Waals gaps, providing a single framework to discuss ferroelectric ionic conductors. △ Less

Submitted 20 July, 2021; v1 submitted 20 July, 2021; originally announced July 2021.

Comments: 11 pages, 5 figures

Journal ref: Adv. Electron. Mater. 2100810 (2021)

Intrinsically Honeycomb-patterned Hydrogenated Graphene with Spin Polarized Edge-states

Authors: Yang Song, Kai Qian, Lei Tao, Zhenyu Wang, Hui Guo, Hui Chen, Shuai Zhang, Yu-Yang Zhang, Xiao Lin, Sokrates T. Pantelides, Shixuan Du, Hong-Jun Gao

Abstract: Since the advent of graphene ushered the era of two-dimensional materials, many forms of hydrogenated graphene have been reported, exhibiting diverse properties ranging from a tunable band gap to ferromagnetic ordering. Patterned hydrogenated graphene with micron-scale patterns has been fabricated by lithographic means. Here we report successful millimeter-scale synthesis of an intrinsically honey… ▽ More Since the advent of graphene ushered the era of two-dimensional materials, many forms of hydrogenated graphene have been reported, exhibiting diverse properties ranging from a tunable band gap to ferromagnetic ordering. Patterned hydrogenated graphene with micron-scale patterns has been fabricated by lithographic means. Here we report successful millimeter-scale synthesis of an intrinsically honeycomb patterned form of hydrogenated graphene on Ru(0001) by epitaxial growth followed by hydrogenation. Combining scanning tunneling microscopy observations with density-functional-theory (DFT) calculations, we reveal that an atomic-hydrogen layer intercalates between graphene and Ru(0001). The result is a hydrogen honeycomb structure that serves as a template for the final hydrogenation, which converts the graphene into graphane only over the template, yielding honeycomb-patterned hydrogenated graphene (HPHG). In effect, HPHG is a form of patterned graphane. DFT calculations find that the unhydrogenated graphene regions embedded in the patterned graphane exhibit spin-polarized edge states. This type of growth mechanism provides new pathways for the fabrication of intrinsically patterned graphene-based materials. △ Less

Submitted 22 June, 2021; originally announced June 2021.

Comments: 23 pages, 4 figures

The structure of amorphous two-dimensional materials: Elemental monolayer amorphous carbon versus binary monolayer amorphous boron nitride

Authors: Yu-Tian Zhang, Yun-Peng Wang, Xianli Zhang, Yu-Yang Zhang, Shixuan Du, Sokrates T. Pantelides

Abstract: The structure of amorphous materials has been debated since the 1930's as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We rean… ▽ More The structure of amorphous materials has been debated since the 1930's as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We reanalyze the results of prior simulations for amorphous graphene and report kinetic Monte Carlo simulations based on alternative algorithms. We find that crystallite-containing Z-CRN is the favored structure of elemental amorphous graphene, as recently fabricated, whereas the most likely structure of binary monolayer amorphous BN is altogether different than either of the two long-debated options: it is a compositionally disordered "pseudo-CRN" comprising a mix of B-N and noncanonical B-B and N-N bonds and containing "pseudocrystallites", namely honeycomb regions made of noncanonical hexagons. Implications for other non-elemental 2D and bulk amorphous materials are discussed. △ Less

Submitted 12 August, 2022; v1 submitted 19 June, 2021; originally announced June 2021.

Comments: 4 figures; with Supplemental Materials

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

Authors: Eric R. Hoglund, De-Liang Bao, Andrew O'Hara, Sara Makarem, Zachary T. Piontkowski, Joseph R. Matson, Ajay K. Yadav, Ryan C. Haisimaier, Roman Engel-Herbert, Jon F. Ihlefeld, Jayakanth Ravichandran, Ramamoorthy Ramesh, Joshua D. Caldwell, Thomas E. Beechem, John A. Tomko, Jordan A. Hachtel, Sokrates T. Pantelides, Patrick E. Hopkins, James M. Howe

Abstract: As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity… ▽ More As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses. △ Less

Submitted 4 October, 2021; v1 submitted 20 May, 2021; originally announced May 2021.

Comments: 38 pages, 3 figures, 10 supplemental figures

Journal ref: Nature 601, 556 (2022)

Synthesis and properties of free-standing monolayer amorphous carbon

Authors: Chee-Tat Toh, Hongji Zhang, Junhao Lin, Alexander S. Mayorov, Yun-Peng Wang, Carlo M. Orofeo, Darim Badur Ferry, Henrik Andersen, Nurbek Kakenov, Zenglong Guo, Irfan Haider Abidi, Hunter Sims, Kazu Suenaga, Sokrates T. Pantelides, Barbaros Özyilmaz

Abstract: Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered.… ▽ More Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered. Here we report the synthesis, by laser-assisted chemical vapour deposition, of centimetre-scale, free-standing, continuous and stable monolayer amorphous carbon, topologically distinct from disordered graphene. Unlike in bulk materials, the structure of monolayer amorphous carbon can be determined by atomic-resolution imaging. Extensive characterization by Raman and X-ray spectroscopy and transmission electron microscopy reveals the complete absence of long-range periodicity and a threefold-coordinated structure with a wide distribution of bond lengths, bond angles, and five-, six-, seven- and eight-member rings. The ring distribution is not a Zachariasen continuous random network, but resembles the competing (nano)crystallite model. We construct a corresponding model that enables density-functional-theory calculations of the properties of monolayer amorphous carbon, in accordance with observations. Direct measurements confirm that it is insulating, with resistivity values similar to those of boron nitride grown by chemical vapour deposition. Free-standing monolayer amorphous carbon is surprisingly stable and deforms to a high breaking strength, without crack propagation from the point of fracture. The excellent physical properties of this stable, free-standing monolayer amorphous carbon could prove useful for permeation and diffusion barriers in applications such as magnetic recording devices and flexible electronics. △ Less

Submitted 19 May, 2021; originally announced May 2021.

Journal ref: Nature volume 577, pages 199-203 (2020)

Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices

Authors: Liangmei Wu, AiWei Wang, **an Shi, Jiahao Yan, Zhang Zhou, Ce Bian, Jiajun Ma, Ruisong Ma, Hongtao Liu, Jiancui Chen, Yuan Huang, Wu Zhou, Lihong Bao, Min Ouyang, Stephen J. Pennycook, Sokrates T. Pantelides, Hong-Jun Gao

Abstract: Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typi… ▽ More Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro- or even milli- second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 10^10. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up. △ Less

Submitted 23 April, 2021; originally announced April 2021.

Comments: Preprint version, to be published in Nature Nanotechnology (Submitted on August 16th, 2020)

Journal ref: Nature Nanotechnology 2021

Atomically-Precise, Custom-Design Origami Graphene Nanostructures

Authors: Hui Chen, Xian-Li Zhang, Yu-Yang Zhang, Dongfei Wang, De-Liang Bao, Yande Que, Wende Xiao, Shixuan Du, Min Ouyang, Sokrates T. Pantelides, Hong-Jun Gao

Abstract: The construction of atomically-precise carbon nanostructures holds promise for develo** novel materials for scientific study and nanotechnology applications. Here we show that graphene origami is an efficient way to convert graphene into atomically-precise, complex, and novel nanostructures. By scanning-tunneling-microscope manipulation at low temperature, we repeatedly fold and unfold graphene… ▽ More The construction of atomically-precise carbon nanostructures holds promise for develo** novel materials for scientific study and nanotechnology applications. Here we show that graphene origami is an efficient way to convert graphene into atomically-precise, complex, and novel nanostructures. By scanning-tunneling-microscope manipulation at low temperature, we repeatedly fold and unfold graphene nanoislands (GNIs) along arbitrarily chosen direction. A bilayer graphene stack featuring a tunable twist angle and a tubular edge connection between the layers are formed. Folding single-crystal GNIs creates tubular edges with specified chirality and one-dimensional electronic features similar to those of carbon nanotubes, while folding bi-crystal GNIs creates well-defined intramolecular junctions. Both origami structural models and electronic band structures were computed to complement analysis of the experimental results. The present atomically-precise graphene origami provides a platform for constructing novel carbon nanostructures with engineered quantum properties and ultimately quantum machines. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Journal ref: Science 365, 1036 (2019)

Quantum Prediction of Ultra-Low Thermal Conductivity in Lithium Intercalation Materials

Authors: Tianli Feng, Andrew O'Hara, Sokrates T. Pantelides

Abstract: Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip storage. Thermal transport properties, although being a crucial element in limiting the charging/discharging rate, package density, energy efficiency, and safety of… ▽ More Lithium-intercalated layered transition-metal oxides, LixTMO2, brought about a paradigm change in rechargeable batteries in recent decades and show promise for use in memristors, a type of device for future neural computing and on-chip storage. Thermal transport properties, although being a crucial element in limiting the charging/discharging rate, package density, energy efficiency, and safety of batteries as well as the controllability and energy consumption of memristors, are poorly managed or even understood yet. Here, for the first time, we employ quantum calculations including high-order lattice anharmonicity and find that the thermal conductivity k of LixTMO2 materials is significantly lower than hitherto believed. More specifically, the theoretical upper limit of k of LiCoO2 is 6 W/m-K, 2-6 times lower than the prior theoretical predictions. Delithiation further reduces k by 40-70% for LiCoO2 and LiNbO2. Grain boundaries, strains, and porosity are yet additional causes of thermal-conductivity reduction, while Li-ion diffusion and electrical transport are found to have only a minor effect on phonon thermal transport. The results elucidate several long-standing issues regarding the thermal transport in lithium-intercalated materials and provide guidance toward designing high-energy-density batteries and controllable memristors. △ Less

Submitted 1 May, 2020; v1 submitted 1 December, 2019; originally announced December 2019.

Comments: Accepted by Nano Energy

Journal ref: Nano Energy 75, 104916 (2020)

Formation energies of charged defects in two-dimensional materials -- resolution of long-standing difficulties

Authors: Andrew O'Hara, Blair R. Tuttle, Xiao-Guang Zhang, Sokrates T. Pantelides

Abstract: Formation energies of charged point defects in semiconductors are calculated using periodic supercells, which entail a divergence arising from long-range Coulombic interactions. The divergence is typically removed by the so-called jellium approach. Recently, Wu, Zhang and Pantelides [WZP, Phys. Rev. Lett. 119, 105501 (2017)] traced the origin of the divergence to the assumption that charged defect… ▽ More Formation energies of charged point defects in semiconductors are calculated using periodic supercells, which entail a divergence arising from long-range Coulombic interactions. The divergence is typically removed by the so-called jellium approach. Recently, Wu, Zhang and Pantelides [WZP, Phys. Rev. Lett. 119, 105501 (2017)] traced the origin of the divergence to the assumption that charged defects are formed by physically removing electrons from or adding electrons to the crystal, violating charge neutrality, a key principle of statistical mechanics that determines the Fermi level. An alternative theory was constructed by recognizing that "charged" defects form by trading carriers with the energy bands, whereby supercells are always charge-neutral so that no divergence is present and no ad-hoc procedures need to be adopted for calculations. Here we give a more detailed exposition of the foundations of both methods and show that the jellium approach can be derived from the statistical-mechanics-backed WZP definition by steps whose validity cannot be assessed a priori. In particular, the divergence appears when the charge density of band carriers is dropped, leaving a supercharged crystal. In the case of charged defects in two-dimensional (2D) materials, unphysical fields appear in vacuum regions. None of these pathological features are present in the reformulated theory. Finally, we report new calculations in both bulk and 2D materials. The WZP approach yields formation energies that differ from jellium values by up to ~1 eV. By analyzing the spatial distribution of wave functions and defect potentials, we provide insights into the inner workings of both methods and demonstrate that the failure of the jellium approach to include the neutralizing electron density of band carriers, as is the case in the physical system, is responsible for the numerical differences between the two methods. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Localization of Yttrium Segregation within YSZ Grain Boundary Dislocation Cores

Authors: G. Sánchez-Santolino, J. Salafranca, S. T. Pantelides, S. J. Pennycook, C. León, M. Varela

Abstract: Ionic conductivity blocking at grain boundaries in polycrystalline electrolytes is one of the main obstacles that need to be overcome in order to improve the performance of solid state fuel cells and batteries. To this aim, harnessing the physical properties of grain boundaries in ionic conducting materials such as yttria stabilized zirconia (YSZ) down to the atomic scale arises as a greatly impor… ▽ More Ionic conductivity blocking at grain boundaries in polycrystalline electrolytes is one of the main obstacles that need to be overcome in order to improve the performance of solid state fuel cells and batteries. To this aim, harnessing the physical properties of grain boundaries in ionic conducting materials such as yttria stabilized zirconia (YSZ) down to the atomic scale arises as a greatly important task. Here we present a structural and compositional analysis of a single grain boundary in a 9 mol% yttria content YSZ bicrystal by means of aberration corrected scanning transmission electron microscopy. Our studies combine strain and compositional atomic resolution analysis with density-functional-theory calculations in order to find a preferential segregation of yttrium to the expansive atomic sites at the grain boundary dislocation cores. These results address a crucial step towards the understanding of the physical properties of grain boundaries down to atomic dimensions. △ Less

Submitted 8 August, 2019; originally announced August 2019.

Comments: 4 figures

Atomic-Resolution Visualization and Do** Effects of Complex Structures in Intercalated Bilayer Graphene

Authors: Jason P. Bonacum, Andrew O'Hara, De-Liang Bao, Oleg S. Ovchinnikov, Yan-Fang Zhang, Georgy Gordeev, Sonakshi Arora, Stephanie Reich, Juan-Carlos Idrobo, Richard F. Haglund, Sokrates T. Pantelides, Kirill Bolotin

Abstract: Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and density-functional-theory (DFT) calculations to study the atomic structure of bilayer graphene (BLG) and few-layer graphene (FLG) intercalated with FeCl$_3$. In BLG we disc… ▽ More Molecules intercalating two-dimensional (2D) materials form complex structures that have been mostly characterized by spatially averaged techniques. Here we use aberration-corrected scanning transmission electron microscopy and density-functional-theory (DFT) calculations to study the atomic structure of bilayer graphene (BLG) and few-layer graphene (FLG) intercalated with FeCl$_3$. In BLG we discover two distinct intercalated structures that we identify as monolayer-FeCl$_3$ and monolayer-FeCl$_2$. The two structures are separated by atomically sharp boundaries and induce large but different free-carrier densities in the graphene layers, $7.1\times10^{13}$ cm$^{-2}$ and $7.1\times10^{13}$ cm$^{-2}$ respectively. In FLG, we observe multiple FeCl$_3$ layers stacked in a variety of possible configurations with respect to one another. Finally, we find that the microscope's electron beam can convert the FeCl$_3$ monolayer into FeOCl monolayers in a rectangular lattice. These results reveal the need for a combination of atomically-resolved microscopy, spectroscopy, and DFT calculations to identify intercalated structures and study their properties. △ Less

Submitted 2 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Materials 3, 064004 (2019)

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy

Authors: Zhe Cheng, Tingyu Bai, **g**g Shi, Tianli Feng, Yekan Wang, Matthew Mecklenburg, Chao Li, Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Bradford B. Pate, Brian M. Foley, Luke Yates, Sokrates T. Pantelides, Baratunde A. Cola, Mark Goorsky, Samuel Graham

Abstract: The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport… ▽ More The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical-vapor-deposited (CVD) diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, non-equilibrium molecular-dynamics (NEMD) simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth. △ Less

Submitted 7 January, 2019; v1 submitted 30 July, 2018; originally announced July 2018.

Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films

Authors: Zhe Cheng, Alex Weidenbach, Tianli Feng, M. Brooks Tellekamp, Sebastian Howard, Matthew J. Wahila, Bill Zivasatienraj, Brian Foley, Sokrates T. Pantelides, Louis F. J. Piper, William Doolittle, Samuel Graham

Abstract: Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding… ▽ More Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors. △ Less

Submitted 14 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Materials 3, 025002 (2019)

Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor FeSe/SrTiO$_3$

Authors: Hunter Sims, Donovan N. Leonard, Axiel Yaël Birenbaum, Zhuozhi Ge, Tom Berlijn, Lian Li, Valentino R. Cooper, Matthew F. Chisholm, Sokrates T. Pantelides

Abstract: The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO$_3$ substrate exhibits a much higher superconducting critical temperature T$_C$ than the bulk material. Here, we examine the interfacial structure of FeSe / SrTiO$_3$ and the effect of an interfacial Ti$_{1+x}$O$_2$ layer on the… ▽ More The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO$_3$ substrate exhibits a much higher superconducting critical temperature T$_C$ than the bulk material. Here, we examine the interfacial structure of FeSe / SrTiO$_3$ and the effect of an interfacial Ti$_{1+x}$O$_2$ layer on the increased T$_C$ using a combination of scanning transmission electron microscopy and density functional theory. We find Ti$_{1+x}$O$_2$ forms its own quasi-two-dimensional layer, bonding to both the substrate and the FeSe film by van der Waals interactions. The excess Ti in this layer electron-dopes the FeSe monolayer in agreement with experimental observations. Moreover, the interfacial layer introduces symmetry-breaking distortions in the FeSe film that favor a T$_C$ increase. These results suggest that this common substrate may be functionalized to modify the electronic structure of a variety of thin films and monolayers. △ Less

Submitted 8 May, 2018; originally announced May 2018.

Comments: 10 pages, 4 figures, supplemental materials available upon request

Journal ref: Phys. Rev. B 100, 144103 (2019)

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

Authors: Sabine M. Neumayer, Eugene A. Eliseev, Michael A. Susner, Alexander Tselev, Brian J. Rodriguez, John A. Brehm, Sokrates T. Pantelides, Ganesh Panchapakesan, Stephen Jesse, Sergei V. Kalinin, Michael A. McGuire, Anna N. Morozovska, Petro Maksymovych, Nina Balke

Abstract: The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q3… ▽ More The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response. △ Less

Submitted 1 February, 2019; v1 submitted 21 March, 2018; originally announced March 2018.

Comments: Published version in Phys. Rev. Materials https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.024401

Journal ref: Phys. Rev. Materials 3, 024401 (2019)

Mechanisms of pyroelectricity in three- and two-dimensional materials

Authors: Jian Liu, Sokrates T. Pantelides

Abstract: Pyroelectricity is a very promising phenomenon in three- and two-dimensional (2D) materials, but first-principles calculations have not so far been used to elucidate the underlying mechanisms. Here we report density-functional theory (DFT) calculations based on the Born-Szigeti theory of pyroelectricity, by combining fundamental thermodynamics and the modern theory of polarization. We find satisfa… ▽ More Pyroelectricity is a very promising phenomenon in three- and two-dimensional (2D) materials, but first-principles calculations have not so far been used to elucidate the underlying mechanisms. Here we report density-functional theory (DFT) calculations based on the Born-Szigeti theory of pyroelectricity, by combining fundamental thermodynamics and the modern theory of polarization. We find satisfactory agreement with experimental data in the case of bulk benchmark materials, showing that the so-called electron-phonon renormalization, whose contribution has been viewed as negligible, is important. We predict out-of-plane pyroelectricity in the recently synthesized Janus MoSSe monolayer and in-plane pyroelectricity in the group-IV monochalcogenide GeS monolayer. It is notable that the so-called secondary pyroelectricity is found to be dominant in GeS monolayer. The present work opens a theoretical route to study the pyroelectric effect using DFT and provides a valuable tool in the search for new candidates for pyroelectric applications. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. Lett. 120, 207602 (2018)

Unified Band Theoretic Description of Electronic and Magnetic Properties of Vanadium Dioxide Phases

Authors: Sheng Xu, Xiao Shen, Kent A. Hallman, Richard F. Haglund, Sokrates T. Pantelides

Abstract: The debate about whether the insulating phases of vanadium dioxide (VO2) can be described by band theory or must be described by a theory of strong electron correlations remains unresolved even after decades of research. Energy-band calculations using hybrid exchange functionals or including self-energy corrections account for the insulating or metallic nature of different phases, but have not yet… ▽ More The debate about whether the insulating phases of vanadium dioxide (VO2) can be described by band theory or must be described by a theory of strong electron correlations remains unresolved even after decades of research. Energy-band calculations using hybrid exchange functionals or including self-energy corrections account for the insulating or metallic nature of different phases, but have not yet successfully accounted for the observed magnetic orderings. Strongly-correlated theories have had limited quantitative success. Here we report that, by using hard pseudopotentials and an optimized hybrid exchange functional, the energy gaps and magnetic orderings of both monoclinic VO2 phases and the metallic nature of the high-temperature rutile phase are consistent with available experimental data, obviating an explicit role for strong correlations. We also report a potential candidate for the newly-found metallic monoclinic phase and present a detailed magnetic structure of the M2 monoclinic phase. △ Less

Submitted 9 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 95, 125105 (2017)

Large-area and high-quality 2D transition metal telluride

Authors: Jiadong Zhou, Fucai Liu, Junhao Lin, Xiangwei Huang, Juan Xia, Bowei Zhang, Qingsheng Zeng, Hong Wang, Chao Zhu, Lin Niu, Xuewen Wang, Wei Fu, Peng Yu, Tay-Rong Chang, Chuang-Han Hsu, Di Wu, Horng-Tay Jeng, Yizhong Huang, Hsin Lin, Zexiang Shen, Changli Yang, Li Lu, Kazu Suenaga, Wu Zhou, Sokrates T. Pantelides , et al. (2 additional authors not shown)

Abstract: Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synt… ▽ More Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 μm. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices. △ Less

Submitted 24 June, 2016; v1 submitted 1 June, 2016; originally announced June 2016.

Variability of structural and electronic properties of bulk and monolayer Si2Te3

Authors: Yevgeniy Puzyrev, X. Shen, C. Combs, S. T. Pantelides

Abstract: Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental study of few-layer Si2Te3 was recently reported, showing that the material has diverse properties for potential applications in Si-based devices ranging from fully integrated thermoelectrics to optoelectronics to chemica… ▽ More Since the emergence of monolayer graphene as a promising two-dimensional material, many other monolayer and few-layer materials have been investigated extensively. An experimental study of few-layer Si2Te3 was recently reported, showing that the material has diverse properties for potential applications in Si-based devices ranging from fully integrated thermoelectrics to optoelectronics to chemical sensors. This material has a unique layered structure: it has a hexagonal closed-packed Te sublattice, with Si dimers occupying octahedral intercalation sites. Here we report a theoretical study of this material in both bulk and monolayer form, unveiling a fascinating array of diverse properties arising from reorientations of the silicon dimers between planes of Te atoms. The lattice constant varies up to 5% and the band gap varies up to 40% depending on dimer orientations. The monolayer band gap is 0.4 eV larger than the bulk-phase value for the lowest-energy configuration of Si dimers. These properties are, in principle, controllable by temperature and strain, making Si2T3 a promising candidate material for nanoscale mechanical, optical, and memristive devices. △ Less

Submitted 11 May, 2016; originally announced May 2016.

Comments: 9 pages, 4 figures

The Effect of Intrinsic Crumpling on the Mechanics of Free-Standing Graphene

Authors: Ryan J. T. Nicholl, Hiram J. Conley, Nickolay V. Lavrik, Ivan Vlassiouk, Yevgeniy S. Puzyrev, Vijayashree Parsi Sreenivas, Sokrates T. Pantelides, Kirill I. Bolotin

Abstract: Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane… ▽ More Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane stiffness of graphene is between 20 and 100 N/m at room temperature, much smaller than 340 N/m (the value expected for flat graphene). Moreover, while the in-plane stiffness only increases moderately when the devices are cooled down to 10 K, it approaches 300 N/m when the aspect ratio of graphene membranes is increased. These results indicate that softening of graphene at temperatures less than 400 K is caused by static wrinkling, with only a small contribution due to flexural phonons. Together, these results explain the large variation in reported mechanical constants of graphene devices and paves the way towards controlling their mechanical properties. △ Less

Submitted 6 November, 2015; originally announced November 2015.

Comments: 9 pages, 5 figures

Journal ref: Nature Communications 6, 8789 (2015)

Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors. Application to capture cross sections

Authors: Georgios D. Barmparis, Yevgeniy S. Puzyrev, X. -G. Zhang, Sokrates T. Pantelides

Abstract: Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major issue in the performance of solar cells and light-emitting diodes. A theory of nonradiative inelastic scattering by defects, however, is non-existent, while the t… ▽ More Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major issue in the performance of solar cells and light-emitting diodes. A theory of nonradiative inelastic scattering by defects, however, is non-existent, while the the- ory for carrier capture by defects has had a long and arduous history. Here we report the construction of a comprehensive theory of inelastic scattering by defects, with carrier capture being a special case. We distinguish between capture under thermal equilibrium conditions and capture under non-equilibrium conditions, e.g., in the presence of electrical current or hot carriers where carriers undergo scattering by defects and are described by a mean free path. In the thermal-equilibrium case, capture is mediated by a non-adiabatic perturbation Hamiltonian, originally identified by Huang and Rhys and by Kubo, which is equal to linear electron-phonon coupling to first order. In the non-equilibrium case, we demonstrate that the primary capture mechanism is within the Born-Oppenheimer approximation, with coupling to the defect potential inducing Franck-Condon electronic transitions, followed by multiphonon dissipation of the transition energy, while the non-adiabatic terms are of secondary importance. We report density-functional-theory calculations of the capture cross section for a prototype defect using the Projector-Augmented-Wave which allows us to employ all-electron wavefunctions. We adopt a Monte Carlo scheme to sample multiphonon configurations and obtain converged results. The theory and the results represent a foundation upon which to build engineering-level models for hot-electron degradation of power devices and the performance of solar cells and light-emitting diodes. △ Less

Submitted 21 August, 2015; v1 submitted 27 June, 2015; originally announced June 2015.

Comments: 37 pages, 5 figures

Journal ref: Phys. Rev. B 92, 214111 (2015)

Atomic origin of high temperature electron trap** in MOS devices

Authors: Xiao Shen, Sarit Dhar, Sokrates T. Pantelides

Abstract: MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently significant enhancement of electron trap** was observed under positive bias in SiC MOSFETs at temperatures higher than 150°C. Here we report first-principle c… ▽ More MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently significant enhancement of electron trap** was observed under positive bias in SiC MOSFETs at temperatures higher than 150°C. Here we report first-principle calculations showing that the enhanced electron trap** is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO2, by which the vacancy transforms into a new structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices. △ Less

Submitted 12 March, 2015; originally announced March 2015.

Journal ref: Applied Physics Letters 98, 063507 (2011)

High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity

Authors: Xiao Shen, Timothy J. Pennycook, David Hernandez-Martin, Ana Pérez, Maria Varela, Yevgeniy S. Puzyrev, Carlos Leon, Zouhair Sefrioui, Jacobo Santamaria, Sokrates T. Pantelides

Abstract: Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in el… ▽ More Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to control. Memristors based on alternative mechanisms have been explored, but achieving both the high On/Off ratio and the low switching energy desirable for use in electronics remains a challenge. Here we report memristive switching in a La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayer with an On/Off ratio greater than 10^3 and demonstrate that the phenomenon originates from a new type of interfacial magnetoelectricity. Using results from first-principles calculations, we show that an external electric-field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic "dead" layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost about of a tenth of atto Joule for write/erase a "bit". Our results indicate new opportunities for manganite/cuprate systems and other transition-metal-oxide junctions in memristive applications. △ Less

Submitted 12 March, 2015; originally announced March 2015.

Journal ref: Advanced Materials Interfaces 3, 1600086 (2016)

Two-dimensional nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3

Authors: Xiao Shen, Kuibo Yin, Yevgeniy S. Puzyrev, Yiwei Liu, Litao Sun, Run-Wei Li, Sokrates T. Pantelides

Abstract: Memristive switching in polycrystalline materials is widely attributed to the formation and rupture of conducting filaments, believed to be mediated by oxygen-vacancy redistribution. The underlying atomic-scale processes are still unknown, however, which limits device modeling and design. Here we combine experimental data with multi-scale calculations to elucidate the entire atomic-scale cycle in… ▽ More Memristive switching in polycrystalline materials is widely attributed to the formation and rupture of conducting filaments, believed to be mediated by oxygen-vacancy redistribution. The underlying atomic-scale processes are still unknown, however, which limits device modeling and design. Here we combine experimental data with multi-scale calculations to elucidate the entire atomic-scale cycle in undoped polycrystalline BiFeO3. Conductive atomic force microscopy reveals that the grain boundaries behave like two-dimensional nanovaristors while, on the return part of the cycle, the decreasing current is through the grains. Using density-functional-theory and Monte-Carlo calculations we deduce the atomic-scale mechanism of the observed phenomena. Oxygen vacancies in non-equilibrium concentrations are initially distributed relatively uniformly, but they are swept into the grain boundaries by an increasing voltage. A critical voltage, the SET voltage, then eliminates the barrier for hop** conduction through vacancy energy levels in grain boundaries. On the return part of the cycle, the grain boundaries are again non-conductive, but the grains show nonzero conductivity by virtue of remote do** by oxygen vacancies. The RESET voltage amounts to a heat pulse that redistributes the vacancies. The realization that nanovaristors are at the heart of memristive switching in polycrystalline materials may open possibilities for novel devices and circuits. △ Less

Submitted 12 March, 2015; originally announced March 2015.

Journal ref: Advanced Electronic Materials 1, 1500019 (2015)

Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy

Authors: A. R. Klots, A. K. M. Newaz, Bin Wang, D. Prasai, H. Krzyzanowska, D. Caudel, N. J. Ghimire, J. Yan, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. H. Tolk, S. T. Pantelides, K. I. Bolotin

Abstract: The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable… ▽ More The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain >1,000) and fast (response time <1ms) photoresponse combined with the high quality of our devices allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we estimate an extremely large binding energy for band-edge excitons, Ebind > 570meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. The analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs. △ Less

Submitted 25 March, 2014; originally announced March 2014.

Comments: 12 pages, 4 figures

Journal ref: Scientific Reports 4, 6608, (2014)

p-type do** in CVD grown MoS2 using Nb

Authors: M. Laskar, D. N. Nath, L. Ma, E. Lee, C. H. Lee, T. Kent, Z. Yang, Rohan Mishra, Manuel A Roldan, Juan-Carlos Idrobo, Sokrates T. Pantelides, Stephen J. Pennycook, R. Myers, Y. Wu, S. Rajan

Abstract: We report on the first demonstration of p-type do** in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman character… ▽ More We report on the first demonstration of p-type do** in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-do** in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

Authors: Hiram J. Conley, Bin Wang, Jed I. Ziegler, Richard F. Haglund Jr., Sokrates T. Pantelides, Kirill I. Bolotin

Abstract: We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using… ▽ More We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is roughly linear with strain, ~45 meV% strain for monolayer MoS2 and ~120 meV% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1.5%, a value supported by first-principles calculations that include excitonic effects. These observations constitute the first demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides. △ Less

Submitted 19 September, 2013; v1 submitted 16 May, 2013; originally announced May 2013.

Comments: Article appears in print in Nanoletters

Journal ref: Nano Letters, 2013, 13 (8), pp 3626-3630

Competing Atomic and Molecular Mechanisms of Thermal Oxidation

Authors: Xiao Shen, Sokrates T. Pantelides

Abstract: The oxidation of SiC and Si provide a unique opportunity for studying oxidation mechanisms because the product is the same, SiO2. Silicon oxidation follows a linear-parabolic law, with molecular oxygen identified as the oxidant. SiC oxidation obeys the same linear-parabolic law but has different rates and activation energies and exhibits much stronger face-dependence. Using results from first-prin… ▽ More The oxidation of SiC and Si provide a unique opportunity for studying oxidation mechanisms because the product is the same, SiO2. Silicon oxidation follows a linear-parabolic law, with molecular oxygen identified as the oxidant. SiC oxidation obeys the same linear-parabolic law but has different rates and activation energies and exhibits much stronger face-dependence. Using results from first-principles calculations, we show that atomic and molecular oxygen are the oxidant for Si- and C-face SiC respectively. Comparing SiC with Si, we elucidate how the interface controls the competition between atomic and molecular mechanisms. △ Less

Submitted 18 December, 2012; v1 submitted 29 October, 2012; originally announced October 2012.

Comments: 11 pages, 4 figures

Journal ref: Journal of Applied Physics 114, 033522 (2013)

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

Authors: A. K. M. Newaz, Yevgeniy S. Puzyrev, Bin Wang, Sokrates T. Pantelides, Kirill I. Bolotin

Abstract: Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional gra… ▽ More Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional graphene devices on SiO2 substrates and possibly for the recently reported high-mobility suspended and supported devices. An attractive approach to reduce such scattering is to place graphene in an environment with high static dielectric constant κ that would effectively screen the electric field due to the impurities. However, experiments so far report only a modest effect of high-κ environment on mobility. Here, we investigate the effect of the dielectric environment of graphene by studying electrical transport in multi-terminal graphene devices that are suspended in liquids with κ ranging from 1.9 to 33. For non-polar liquids (κ<5) we observe a rapid increase of μ with κ and report a record room-temperature mobility as large as ~60,000 cm2/Vs for graphene devices in anisole (κ=4.3), while in polar liquids (κ>18) we observe a drastic drop in mobility. We demonstrate that non-polar liquids enhance mobility by screening charged impurities adsorbed on graphene, while charged ions in polar liquids cause the observed mobility suppression. Furthermore, using molecular dynamics simulation we establish that scattering by out-of-plane flexural phonons, a dominant scattering mechanism in suspended graphene in vacuum at room temperature, is suppressed by the presence of liquids. We expect that our findings may provide avenues to control and reduce carrier scattering in future graphene-based electronic devices. △ Less

Submitted 7 March, 2012; originally announced March 2012.

Comments: To Appear in Nature Communications (2012)

Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies

Authors: A. Y. Borisevich, A. R. Lupini, J. He, E. A. Eliseev, A. N. Morozovska, G. S. Svechnikov, P. Yu, Y. H. Chu, R. Ramesh, S. T. Pantelides, S. V. Kalinin, S. J. Pennycook

Abstract: Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at t… ▽ More Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural map** can serve as a quantitative indicator of the presence of O vacancies at interfaces. △ Less

Submitted 31 October, 2011; originally announced November 2011.

Journal ref: Phys. Rev. B 86, 140102(R) (2012)

Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures

Authors: Xiao Shen, Sokrates T. Pantelides

Abstract: Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental d… ▽ More Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking theoretical results and available experimental evidence, we show that thermal oxidation generates carbon di-interstitial defects inside the semiconductor substrate and that they are a major cause of the poor mobility in SiC/SiO2 structures. △ Less

Submitted 11 November, 2010; originally announced November 2010.

Journal ref: Applied Physics Letters 98, 053507 (2011)

Atomic-scale compensation phenomena at polar interfaces

Authors: Matthew F. Chisholm, Weidong Luo, Mark P. Oxley, Sokrates T. Pantelides, Ho Nyung Lee

Abstract: The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric po… ▽ More The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies. △ Less

Submitted 26 October, 2010; originally announced October 2010.

Comments: 3 figures

Control of the structural and magnetic properties of perovskite oxide ultrathin films through the substrate symmetry effect

Authors: Jun He, Albina Borisevich, Sergei V. Kalinin, Stephen J. Pennycook, Sokrates T. Pantelides

Abstract: Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interf… ▽ More Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interface properties driven by symmetry alone. Depending on the resistance of the octahedra to deformation, the interface layer can be as small as one unit cell or extend deep into the thin film. △ Less

Submitted 29 June, 2010; originally announced June 2010.

Mechanical and Electronic Properties of Ferromagnetic GaMnAs Using Ultrafast Coherent Acoustic Phonons

Authors: J. Qi, J. A. Yan, H. Park, A. Steigerwald, Y. Xu, S. N. Gilbert, X. Liu, J. K. Furdyna, S. T. Pantelides, N. Tolk

Abstract: Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant C11 of Ga1-xMnxAs (0.03<x<0.07) are observed to be systematically smaller than those of GaAs. Both C11 and Vs of GaMnAs are found to increase with temperature… ▽ More Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant C11 of Ga1-xMnxAs (0.03<x<0.07) are observed to be systematically smaller than those of GaAs. Both C11 and Vs of GaMnAs are found to increase with temperature (78 K<T<295 K), again in contrast to the opposite behavior in GaAs. In addition, the fundamental bandgap (at E0 critical point) of Ga1-xMnxAs is found to shift slightly to higher energies with Mn concentration. △ Less

Submitted 14 September, 2012; v1 submitted 10 July, 2008; originally announced July 2008.

Journal ref: Phys. Rev. B 81, 115208 (2010)

Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-7x7

Authors: Y. L. Wang, H. -J. Gao, H. M. Guo, Sanwu Wang, Sokrates T. Pantelides

Abstract: We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are prefe… ▽ More We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are preferred. First-principles density functional calculations find that adatom substitution competes energetically with a high-coordination bridge site, but atoms occupying the latter sites are highly mobile. Thus, the observed structures are indeed more thermodynamically stable. △ Less

Submitted 14 February, 2005; originally announced February 2005.

Comments: RevTex4, 4 pages, 4 figures, Fig. 2 of high quality available upon request, to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 94, 106101 (2005).

Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films

Authors: Zhong-Yi Lu, X. -G. Zhang, Sokrates T. Pantelides

Abstract: Quantum-well (QW) states in {\it nonmagnetic} metal layers contained in magnetic multilayers are known to be important in spin-dependent transport, but the role of QW states in {\it magnetic} layers remains elusive. Here we identify the conditions and mechanisms for resonant tunneling through QW states in magnetic layers and determine candidate structures. We report first-principles calculations… ▽ More Quantum-well (QW) states in {\it nonmagnetic} metal layers contained in magnetic multilayers are known to be important in spin-dependent transport, but the role of QW states in {\it magnetic} layers remains elusive. Here we identify the conditions and mechanisms for resonant tunneling through QW states in magnetic layers and determine candidate structures. We report first-principles calculations of spin-dependent transport in epitaxial Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions. We demonstrate the formation of sharp QW states in the Fe layer and show discrete conductance jumps as the QW states enter the transport window with increasing bias. At resonance, the current increases by one to two orders of magnitude. The tunneling magnetoresistance ratio is several times larger than in simple spin tunnel junctions and is positive (negative) for majority- (minority-) spin resonances, with a large asymmetry between positive and negative biases. The results can serve as the basis for novel spintronic devices. △ Less

Submitted 9 November, 2004; originally announced November 2004.

Comments: 4 figures in 5 eps files

Journal ref: Phys. Rev. Lett. 94, 207210 (2005)

Dopants adsorbed as single atoms prevent degradation of catalysts

Authors: Sanwu Wang, Albina Y. Borisevich, Sergey N. Rashkeev, Michael V. Glazoff, Karl Sohlberg, Stephen J. Pennycook, Sokrates T. Pantelides

Abstract: The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous g… ▽ More The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous gamma-Al2O3, a widely used catalyst and catalytic support, transforms to non-porous alpha-Al2O3 at ~1,100C. Do** with La raises the transformation temperature to ~1,250C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to alpha-Al2O3. The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials. △ Less

Submitted 10 July, 2004; originally announced July 2004.

Comments: RevTex4, 4 pages, 4 JPEG figures, published in Nature Materials

Journal ref: Nature Materials 3, 143 (2004)

Excited-state relaxations and Franck-Condon shift in Si quantum dots

Authors: A. Franceschetti, S. T. Pantelides

Abstract: Excited-state relaxations in molecules are responsible for a red shift of the absorption peak with respect to the emission peak (Franck-Condon shift). The magnitude of this shift in semiconductor quantum dots is still unknown. Here we report first-principle calculations of excited-state relaxations in small (diameter < 2.2 nm) Si nanocrystals, showing that the Franck-Condon shift is surprisingly… ▽ More Excited-state relaxations in molecules are responsible for a red shift of the absorption peak with respect to the emission peak (Franck-Condon shift). The magnitude of this shift in semiconductor quantum dots is still unknown. Here we report first-principle calculations of excited-state relaxations in small (diameter < 2.2 nm) Si nanocrystals, showing that the Franck-Condon shift is surprisingly large (~60 meV for a 2.2 nm-diameter nanocrystal). The physical mechanism of the excited-state relaxations changes abruptly around 1 nanoeter in size, providing a clear demarcation between ``molecules'' and ``nanocrystals''. △ Less

Submitted 26 September, 2002; originally announced September 2002.