Showing 1–33 of 33 results for author: Pan, M

Intrinsic Orbital Origin for the Chirality-Dependent Nonlinear Planar Hall Effect of Topological Nodal Fermions in Chiral Crystals

Authors: Mingxiang Pan, Hui Zeng, Erqing Wang, Huaqing Huang

Abstract: Topological semimetals in chiral crystals, which possess both structural handedness and band crossings (or nodes) with topological chiral charge, exhibit many exotic physical properties. Here we demonstrate that the structural and electronic chirality of these systems can endow them with another fascinating phenomenon -- the intrinsic nonlinear planar Hall effect (INPHE), which is prominent around… ▽ More Topological semimetals in chiral crystals, which possess both structural handedness and band crossings (or nodes) with topological chiral charge, exhibit many exotic physical properties. Here we demonstrate that the structural and electronic chirality of these systems can endow them with another fascinating phenomenon -- the intrinsic nonlinear planar Hall effect (INPHE), which is prominent around the nodes and reverses sign upon chirality reversal in opposite enantiomers. Taking chiral tellurium as an example, we reveal an intrinsic orbital mechanism, which manifests diverging orbital magnetic moments with hedgehog-like textures around nodes and, therefore, generates a dominant contribution to the INPHE that is proportional to the topological charge. Furthermore, we show that multifold fermions in topological chiral semimetals with B20 structures (e.g., CoSi and PtAl) induce a giant INPHE conductivity reaching the order of $1\sim 10\; \mathrm{A}\cdot\mathrm{V}^{-2}\cdot\mathrm{T}^{-1}$, which is detectable in experiments. Our study not only relates nonlinear transport to band topology and enantiomer recognition but also offers a new way to explore the exotic physical properties associated with unconventional chiral fermions. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Authors: Junde Liu, Pei Liu, Liu Yang, Sung-Hoon Lee, Mojun Pan, Famin Chen, Jierui Huang, Bei Jiang, Mingzhe Hu, Yuchong Zhang, Zhaoyang Xie, Gang Wang, Mengxue Guan, Wei Jiang, Huaixin Yang, Jianqi Li, Chenxia Yun, Zhiwei Wang, Sheng Meng, Yugui Yao, Tian Qian, Xun Shi

Abstract: Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden… ▽ More Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices. △ Less

Submitted 5 May, 2024; originally announced May 2024.

Evidence for an Excitonic Insulator State in Ta$_2$Pd$_3$Te$_5$

Authors: Jierui Huang, Bei Jiang, **gyu Yao, Dayu Yan, Xincheng Lei, Jiacheng Gao, Zhaopeng Guo, Feng **, Yupeng Li, Zhenyu Yuan, Congcong Chai, Haohao Sheng, Mojun Pan, Famin Chen, Junde Liu, Shunye Gao, Gexing Qu, Bo Liu, Zhicheng Jiang, Zhengtai Liu, Xiaoyan Ma, Shiming Zhou, Yaobo Huang, Chenxia Yun, Qingming Zhang , et al. (8 additional authors not shown)

Abstract: The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical invest… ▽ More The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical investigations, we provide evidence for the existence of an EI ground state in a van der Waals compound Ta$_2$Pd$_3$Te$_5$. Density-functional-theory calculations suggest that it is a semimetal with a small band overlap, whereas various experiments exhibit an insulating ground state with a clear band gap. Upon incorporating electron-hole Coulomb interaction into our calculations, we obtain an EI phase where the electronic symmetry breaking opens a many-body gap. Angle-resolved photoemission spectroscopy measurements exhibit that the band gap is closed with a significant change in the dispersions as the number of thermally excited charge carriers becomes sufficiently large in both equilibrium and nonequilibrium states. Structural measurements reveal a slight breaking of crystal symmetry with exceptionally small lattice distortion in the insulating state, which cannot account for the significant gap opening. Therefore, we attribute the insulating ground state with a gap opening in Ta$_2$Pd$_3$Te$_5$ to exciton condensation, where the coupling to the symmetry-breaking electronic state induces a subtle change in the crystal structure. △ Less

Submitted 14 March, 2024; v1 submitted 22 December, 2023; originally announced December 2023.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. X 14, 011046, 2024

Time-resolved ARPES with probe energy of 6.0/7.2 eV and switchable resolution configuration

Authors: Mojun Pan, Junde Liu, Famin Chen, Ji Wang, ChenXia Yun, Tian Qian

Abstract: We present a detailed exposition of the design for time- and angle-resolved photoemission spectroscopy using a UV probe laser source that combines the nonlinear effects of \b{eta}-BaB2O4 and KBe2BO3F2 optical crystals. The photon energy of the probe laser can be switched between 6.0 and 7.2 eV, with the flexibility to operate each photon energy setting under two distinct resolution configurations.… ▽ More We present a detailed exposition of the design for time- and angle-resolved photoemission spectroscopy using a UV probe laser source that combines the nonlinear effects of \b{eta}-BaB2O4 and KBe2BO3F2 optical crystals. The photon energy of the probe laser can be switched between 6.0 and 7.2 eV, with the flexibility to operate each photon energy setting under two distinct resolution configurations. Under the fully optimized energy resolution configuration, we achieve an energy resolution of 8.5 meV at 6.0 eV and 10 meV at 7.2 eV. Alternatively, switching to the other configuration enhances temporal resolution, yielding a temporal resolution of 72 fs for 6.0 eV and 185 fs for 7.2 eV. We validated the performance and reliability of our system by applying it to measuring two typical materials: the topological insulator MnBi2Te4 and excitonic insulator candidate Ta2NiSe5. △ Less

Submitted 12 October, 2023; originally announced October 2023.

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Authors: Jeffrey T. Mullen, James A. Boulton, Minghao Pan, Ki Wook Kim

Abstract: Using first principles calculations, this work investigates the suitability of diamond/c-BN heterojunctions for high frequency, high power device applications. The key quantities of band offsets and interface charge polarization are examined for different crystallographic orientations [(110), (111), or (100)], bond terminations (C-B or C-N), and substrates (diamond or c-BN). The results indicate t… ▽ More Using first principles calculations, this work investigates the suitability of diamond/c-BN heterojunctions for high frequency, high power device applications. The key quantities of band offsets and interface charge polarization are examined for different crystallographic orientations [(110), (111), or (100)], bond terminations (C-B or C-N), and substrates (diamond or c-BN). The results indicate that both the (111) and (100) structures with polar interfaces are likely to be a type-I alignment with the diamond conduction and valence band extrema nested within the c-BN bandgap, whereas the non-polar (110) counterpart may form type II as the valence band of c-BN is shifted down substantially lower. The (111) and (100) structures also show net charge polarization in a narrow region at the interface. The electron-deficient and electron-rich nature of the C-B and C-N bonding are found to induce charge redistribution leading to an essentially 2D sheet of negative and positive polarization. With the predicted band alignments suitable for carrier confinement as well as the possibility of the modulation and polarization do**, the diamond/c-BN heterostructures are a promising candidate for high-performance electronic devices with a highly conductive 2D channel. Both p-type and n-type devices appear possible with a judicious choice of the heterojunction configuration. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Comments: 18 pages, 5 figures

Phononic Stiefel-Whitney topology with corner vibrational modes in two-dimensional Xenes and ligand-functionalized derivatives

Authors: Mingxiang Pan, Huaqing Huang

Abstract: Two-dimensional (2D) Stiefel-Whitney (SW) insulator is a fragile topological state characterized by the second SW class in the presence of space-time inversion symmetry. So far, SWIs have been proposed in several electronic materials but seldom in phononic systems. Here we recognize that a large class of 2D buckled honeycomb crystals termed Xenes and their ligand-functionalized derivatives realize… ▽ More Two-dimensional (2D) Stiefel-Whitney (SW) insulator is a fragile topological state characterized by the second SW class in the presence of space-time inversion symmetry. So far, SWIs have been proposed in several electronic materials but seldom in phononic systems. Here we recognize that a large class of 2D buckled honeycomb crystals termed Xenes and their ligand-functionalized derivatives realize the nontrivial phononic SW topology. The phononic SWIs are identified by a nonzero second SW number $w_2=1$, associated with gaped edge states and robust topological corner modes. Despite the versatility of electronic topological properties in these materials, the nontrivial phononic SW topology is mainly attributed to the double band inversion between in-plane acoustic and out-of-plane optical bands with opposite parities due to the structural buckling of the honeycomb lattice. Our findings not only reveal an overlooked phononic topological property of 2D Xene-related materials, but also afford abundant readily synthesizable material candidates with simple phononic spectra for further experimental studies of phononic SW topology physics. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Comments: Phys. Rev. B (in press)

Discrete scale invariance of the quasi-bound states at atomic vacancies in a topological material

Authors: Zhibin Shao, Shaojian Li, Yanzhao Liu, Zi Li, Huichao Wang, Qi Bian, Jiaqiang Yan, David Mandrus, Haiwen Liu, ** Zhang, X. C. Xie, Jian Wang, Minghu Pan

Abstract: Recently, log-periodic quantum oscillations have been detected in topological materials zirconium pentatelluride (ZrTe5) and hafnium pentatelluride (HfTe5), displaying intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible p… ▽ More Recently, log-periodic quantum oscillations have been detected in topological materials zirconium pentatelluride (ZrTe5) and hafnium pentatelluride (HfTe5), displaying intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible platform to study the long-pursued atomic-collapse phenomenon. Here, we demonstrate that a variety of atomic vacancies in the topological material HfTe5 can host the geometric quasi-bound states with DSI feature, resembling the artificial supercritical atom collapse. The density of states of these quasi-bound states are enhanced and the quasi-bound states are spatially distributed in the "orbitals" surrounding the vacancy sites, which are detected and visualized by low-temperature scanning tunneling microscope/spectroscopy (STM/S). By applying the perpendicular magnetic fields, the quasi-bound states at lower energies become wider and eventually invisible, meanwhile the energies of quasi-bound states move gradually towards the Fermi energy (EF). These features are consistent with the theoretical prediction of a magnetic-field-induced transition from supercritical to subcritical states. The direct observation of geometric quasi-bound states sheds light on the deep understanding of the DSI in quantum materials. △ Less

Submitted 8 March, 2023; v1 submitted 11 October, 2022; originally announced October 2022.

Journal ref: PNAS 119, e2204804119 (2022)

Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound

Authors: Shunye Gao, Shuai Zhang, Cuixiang Wang, Shaohua Yan, Xin Han, Xuecong Ji, Wei Tao, **gtong Liu, Tiantian Wang, Shuaikang Yuan, Gexing Qu, Ziyan Chen, Yongzhao Zhang, Jierui Huang, Mojun Pan, Shiyu Peng, Yong Hu, Hang Li, Yaobo Huang, Hui Zhou, Sheng Meng, Liu Yang, Zhiwei Wang, Yugui Yao, Zhiguo Chen , et al. (9 additional authors not shown)

Abstract: The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simplest degree of freedom is an ideal and highly desirable system for studying the fundamental physics of Mottness. In this study, we have unambiguously i… ▽ More The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simplest degree of freedom is an ideal and highly desirable system for studying the fundamental physics of Mottness. In this study, we have unambiguously identified such an anticipated Mott insulator in a van der Waals layered compound Nb3Cl8. In the high-temperature phase, where interlayer coupling is negligible, density functional theory calculations for the monolayer of Nb3Cl8 suggest a half-filled flat band at the Fermi level, whereas angle-resolved photoemission spectroscopy experiments observe a large gap. This observation is perfectly reproduced by dynamical mean-field theory calculations considering strong electron correlations, indicating a correlation-driven Mott insulator state. Since this half-filled band derived from a single 2a1 orbital is isolated from all other bands, the monolayer of Nb3Cl8 is an ideal realization of the celebrated single-band Hubbard model. Upon decreasing the temperature, the bulk system undergoes a phase transition, where structural changes significantly enhance the interlayer coupling. This results in a bonding-antibonding splitting in the Hubbard bands, while the Mott gap remains dominant. Our discovery provides a simple and seminal model system for investigating Mott physics and other emerging correlated states. △ Less

Submitted 14 December, 2023; v1 submitted 23 May, 2022; originally announced May 2022.

Comments: 23 pages, 4 figures, and the Supplemental Material

Journal ref: Phys. Rev. X 13, 041049, 2023

High-Temperature Anomalous Metal States in Iron-Based Interface Superconductors

Authors: Yanan Li, Haiwen Liu, Haoran Ji, Chengcheng Ji, Shichao Qi, Xiaotong Jiao, Wenfeng Dong, Yi Sun, Wenhao Zhang, Zihan Cui, Minghu Pan, Nitin Samarth, Lili Wang, X. C. Xie, Qi-Kun Xue, Yi Liu, Jian Wang

Abstract: The nature of the anomalous metal state has been a major puzzle in condensed matter physics for more than three decades. Here, we report systematic investigation and modulation of the anomalous metal states in high-temperature interface superconductor FeSe films on SrTiO3 substrate. Remarkably, under zero magnetic field, the anomalous metal state persists up to 20 K in pristine FeSe films, an exce… ▽ More The nature of the anomalous metal state has been a major puzzle in condensed matter physics for more than three decades. Here, we report systematic investigation and modulation of the anomalous metal states in high-temperature interface superconductor FeSe films on SrTiO3 substrate. Remarkably, under zero magnetic field, the anomalous metal state persists up to 20 K in pristine FeSe films, an exceptionally high temperature standing out from previous observations. In stark contrast, for the FeSe films with nano-hole arrays, the characteristic temperature of the anomalous metal state is considerably reduced. We demonstrate that the observed anomalous metal states originate from the quantum tunneling of vortices adjusted by the Ohmic dissipation. Our work offers a perspective for understanding the origin and modulation of the anomalous metal states in two-dimensional bosonic systems. △ Less

Submitted 4 June, 2024; v1 submitted 30 November, 2021; originally announced November 2021.

Journal ref: Physical Review Letters 132, 226003 (2024)

Liganded Xene as a Prototype of Two-Dimensional Stiefel-Whitney Insulators

Authors: Mingxiang Pan, Dexin Li, Jiahao Fan, Huaqing Huang

Abstract: Two-dimensional (2D) Stiefel-Whitney insulator (SWI), which is characterized by the second Stiefel-Whitney class, is a new class of topological phases with zero Berry curvature. As a novel topological state, it has been well studied in theory but seldom realized in realistic materials. Here we propose that a large class of liganded Xenes, i.e., hydrogenated and halogenated 2D group-IV honeycomb la… ▽ More Two-dimensional (2D) Stiefel-Whitney insulator (SWI), which is characterized by the second Stiefel-Whitney class, is a new class of topological phases with zero Berry curvature. As a novel topological state, it has been well studied in theory but seldom realized in realistic materials. Here we propose that a large class of liganded Xenes, i.e., hydrogenated and halogenated 2D group-IV honeycomb lattices, are 2D SWIs. The nontrivial topology of liganded Xenes is identified by the bulk topological invariant and the existence of protected corner states. Moreover, the large and tunable band gap (up to 3.5 eV) of liganded Xenes will facilitate the experimental characterization of the 2D SWI phase. Our findings not only provide abundant realistic material candidates that are experimentally feasible, but also draw more fundamental research interest towards the topological physics associated with Stiefel-Whitney class in the absence of Berry curvature. △ Less

Submitted 1 September, 2021; v1 submitted 24 August, 2021; originally announced August 2021.

Comments: 6 pages 3figures

Journal ref: npj Computational Materials volume 8, Article number: 1 (2022)

Eightfold Fermionic Excitation in a Charge Density Wave Compound

Authors: Xi Zhang, Qiangqiang Gu, Haigen Sun, Tianchuang Luo, Yanzhao Liu, Yueyuan Chen, Zhibin Shao, Zongyuan Zhang, Shaojian Li, Yuanwei Sun, Yuehui Li, Xiaokang Li, Shangjie Xue, Jun Ge, Ying Xing, R. Comin, Zengwei Zhu, Peng Gao, Binghai Yan, Ji Feng, Minghu Pan, Jian Wang

Abstract: Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond two- and fourfold degenerate Weyl and Dirac fermions, three-, six- and eightfold symmetry protected degeneracies have been predicted however remain challenging to realize in solid state materials. Here, charge density wave compound TaTe4 is proposed to hold eightfol… ▽ More Unconventional quasiparticle excitations in condensed matter systems have become one of the most important research frontiers. Beyond two- and fourfold degenerate Weyl and Dirac fermions, three-, six- and eightfold symmetry protected degeneracies have been predicted however remain challenging to realize in solid state materials. Here, charge density wave compound TaTe4 is proposed to hold eightfold fermionic excitation and Dirac point in energy bands. High quality TaTe4 single crystals are prepared, where the charge density wave is revealed by directly imaging the atomic structure and a pseudogap of about 45 meV on the surface. Shubnikov de-Haas oscillations of TaTe4 are consistent with band structure calculation. Scanning tunneling microscopy reveals atomic step edge states on the surface of TaTe4. This work uncovers that charge density wave is able to induce new topological phases and sheds new light on the novel excitations in condensed matter materials. △ Less

Submitted 30 June, 2020; originally announced June 2020.

Comments: Accepted by PRB: https://journals.aps.org/prb/accepted/7907cK4eW0b1ee0b93fd67c1b42942bbb08eafc3c

Journal ref: Phys. Rev. B 102, 035125 (2020)

Revealing the low-temperature fast relaxation peak in a model metallic glass

Authors: B. Wang, L. J. Wang, B. S. Shang, X. Q. Gao, Y. Yang, H. Y. Bai, M. X. Pan, W. H. Wang, P. F. Guan

Abstract: By systematically investigating the relaxation behavior of a model metallic glass based on the extensive molecular dynamics (MD) simulations combined with the dynamic mechanical spectroscopy method, a pronounced ultra-low temperature peak on the loss modulus spectrum was discovered for the first time in MD simulations. It was found that the relation peak occurs at a much lower temperature than the… ▽ More By systematically investigating the relaxation behavior of a model metallic glass based on the extensive molecular dynamics (MD) simulations combined with the dynamic mechanical spectroscopy method, a pronounced ultra-low temperature peak on the loss modulus spectrum was discovered for the first time in MD simulations. It was found that the relation peak occurs at a much lower temperature than the typical temperature for the conventional beta relation peak as reported in the literature. According to the atomic displacement analysis, we unravel that the reversible atomic motions, rather than the thermal vibrations or local structural rearrangements, mainly contribute to this relaxation peak. We further identify the atomic level mechanism of this fast relaxation process by characterizing the local geometrical anisotropy. Furthermore, by tracing the dynamic behaviors of these "reversible" atoms, we demonstrate the intrinsic hierarchy of the local relaxation modes, which are triggered by atomic vibrations and gradually developed to the reversible and irreversible atomic movements. Our findings shed light on a general picture of the relaxation processes in metallic glasses. △ Less

Submitted 22 February, 2020; originally announced February 2020.

Bandgap closing at the screw dislocations of WS2 spirals

Authors: Xin Zhang, Kaige Hu, Yifei Li, Guohua Wei, Nathaniel P. Stern, Min Pan, Xiao Li, Hong Luo, Lei Liu

Abstract: Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of… ▽ More Van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) materials are emerging as one class of quantum materials holding novel optical and electronic properties. In particular, the bandgap tunability attractive for nanoelectronics technology have been observed up to 1.1 eV when applying dielectric screening or grain boundary engineering. Here we present the experimental observation of bandgap closing at the center of the screw dislocation-driven WS2 spiral pyramid by means of scanning tunneling spectroscopy, which is validated by first-principle calculations. The observed giant bandgap modulation is attributed to the presence of dangling bonds induced by the W-S broken and the enhanced localized stress in the core of the dislocation. Achieving this metallic state and the consequent vertical conducting channel presents a pathway to 3D-interconnected vdW heterostructure devices based on emergent semiconducting TMDCs. △ Less

Submitted 6 August, 2019; v1 submitted 17 June, 2019; originally announced June 2019.

Comments: need major polishing

Effect of tungsten on vacancy behaviors in Ta-W alloys from first-principles

Authors: Yini Lv, Kaige Hu, Shulong Wen, Min Pan, Zheng Huang, Zelin Cao, Yong Zhao

Abstract: Alloying elements play an important role in the design of plasma facing materials with good comprehensive properties. Based on first-principles calculations, the stability of alloying element W and its interaction with vacancy defects in Ta-W alloys are studied. The results show that W tends to distribute dispersedly in Ta lattice, and is not likely to form precipitation even with the coexistence… ▽ More Alloying elements play an important role in the design of plasma facing materials with good comprehensive properties. Based on first-principles calculations, the stability of alloying element W and its interaction with vacancy defects in Ta-W alloys are studied. The results show that W tends to distribute dispersedly in Ta lattice, and is not likely to form precipitation even with the coexistence of vacancy. The aggregation behaviors of W and vacancy can be affected by their concentration competition. The increase of W atoms has a negative effect on the vacancy clustering, as well as delays the vacancy nucleation process, which is favorable to the recovery of point defects. Our results are in consistent with the defect evolution observed in irradiation experiments in Ta-W alloys. Our calculations suggest that Ta is a potential repairing element that can be doped into Ta-based materials to improve their radiation resistance. △ Less

Submitted 15 June, 2019; originally announced June 2019.

Comments: 9 pages, 6 figures

Journal ref: Solid State Communications 113767 (2019)

Transmutation elements Re/Ta effect on vacancy formation and dissociation behavior in W

Authors: Shulong Wen, Kaige Hu, Min Pan, Zheng Huang, Zelin Cao, Yini Lv, Yong Zhao

Abstract: Transmutation elements are the essential products in plasma facing materials tungsten, and have further effects on point defects evolution resulted by radiation. Here, transmutation elements Re and Ta atoms have been selected to assess the effects on property of vacancy and vacancy cluster in W material via first-principles calculations. The formation energy indicates mono-vacancy is more likely t… ▽ More Transmutation elements are the essential products in plasma facing materials tungsten, and have further effects on point defects evolution resulted by radiation. Here, transmutation elements Re and Ta atoms have been selected to assess the effects on property of vacancy and vacancy cluster in W material via first-principles calculations. The formation energy indicates mono-vacancy is more likely to form in W-Re system than pure W and W-Ta system. Both Re and Ta have reduced the diffusion barrier energy in the mono-vacancy migration. The calculation presents that vacancy cluster prefers to grow up by combining another vacancy cluster relative to a single mono-vacancy. Re is favorable to the nucleation and growth of vacancies clusters, while Ta has a suppressive effect on the aggregation of small vacancy cluster. The emphasis analysis is obtained according the volumetric dependent strain. Vacancy dissociation calculations show that the dissociation of vacancy clusters is easier to begin with a single vacancy dissociation process. △ Less

Submitted 15 June, 2019; originally announced June 2019.

Comments: 7 pages, 6 figures

Journal ref: Computational Materials Science 179 (2020) 109624

Scanning tunneling microscopic evidence of interface enhanced high-Tc superconductivity in Pb islands grown on SrTiO3

Authors: Haigen Sun, Zhibin Shao, Zongyuan Zhang, Yan Cao, Shaojian Li, Xin Zhang, Qi Bian, Habakubaho Gedeon, Hui Yuan, Jianfeng Zhang, Kai Liu, Zhong-Yi Lu, Tao Xiang, Qi-Kun Xue, Minghu Pan

Abstract: The discovery of the interface enhanced superconductivity in the single layer film of FeSe epitaxially grown on SrTiO3 substrates has triggered a flurry of activity in the field of superconductivity. It raised the hope to find more conventional high-Tc superconductors which are purely driven by the electron-phonon interaction at ambient pressure. Here we report the experimental evidence from the m… ▽ More The discovery of the interface enhanced superconductivity in the single layer film of FeSe epitaxially grown on SrTiO3 substrates has triggered a flurry of activity in the field of superconductivity. It raised the hope to find more conventional high-Tc superconductors which are purely driven by the electron-phonon interaction at ambient pressure. Here we report the experimental evidence from the measurement of scanning tunneling spectroscopy for the interface enhanced high-Tc superconductivity in the Pb thin film islands grown on SrTiO3 substrates. The superconducting energy gap of the Pb film is found to depend on both the thickness and the volume of the islands. The largest superconducting energy gap is found to be about 10 meV, which is 7 times larger than that in the bulk Pb. The corresponding superconducting transition temperature, estimated by fitting the temperature dependence of the gap values using the BCS formula, is found to be 47 K, again 7 times higher than that of the bulk Pb. △ Less

Submitted 23 November, 2018; originally announced November 2018.

Surface Superconductivity in the type II Weyl Semimetal TaIrTe4

Authors: Ying Xing, Zhibin Shao, Jun Ge, Jiawei Luo, **hua Wang, Zengwei Zhu, Jun Liu, Yong Wang, Zhiying Zhao, Jiaqiang Yan, David Mandrus, Binghai Yan, Xiong-Jun Liu, Minghu Pan, Jian Wang

Abstract: The search for unconventional superconductivity in Weyl semimetal materials is currently an exciting pursuit, since such superconducting phases could potentially be topologically nontrivial and host exotic Majorana modes. The layered material TaIrTe4 is a newly predicted time-reversal invariant type II Weyl semimetal with minimum number of Weyl points. Here, we report the discovery of surface supe… ▽ More The search for unconventional superconductivity in Weyl semimetal materials is currently an exciting pursuit, since such superconducting phases could potentially be topologically nontrivial and host exotic Majorana modes. The layered material TaIrTe4 is a newly predicted time-reversal invariant type II Weyl semimetal with minimum number of Weyl points. Here, we report the discovery of surface superconductivity in Weyl semimetal TaIrTe4. Our scanning tunneling microscopy/spectroscopy (STM/S) visualizes Fermi arc surface states of TaIrTe4 that are consistent with the previous angle-resolved photoemission spectroscopy (ARPES) results. By a systematic study based on STS at ultralow temperature, we observe uniform superconducting gaps on the sample surface. The superconductivity is further confirmed by electrical transport measurements at ultralow temperature, with an onset transition temperature (Tc) up to 1.54 K being observed. The normalized upper critical field h*(T/Tc) behavior and the stability of the superconductivity against the ferromagnet indicate that the discovered superconductivity is unconventional with the p-wave pairing. The systematic STS, thickness and angular dependent transport measurements reveal that the detected superconductivity is quasi-one-dimensional (quasi-1D) and occurs in the surface states. The discovery of the surface superconductivity in TaIrTe4 provides a new novel platform to explore topological superconductivity and Majorana modes. △ Less

Submitted 10 August, 2020; v1 submitted 28 May, 2018; originally announced May 2018.

Journal ref: National Science Review 7, 579-587 (2020)

Electron Counts, Structural Stability, and Magnetism in BaCuSn$_2$-CeNi$_1$$_-$$_x$Si$_2$-type YT$_x$Ge$_2$ (T= Cr, Mn, Fe, Co, and Ni)

Authors: Lea Gustin, Lingyi Xing, Max T. Pan, Rongying **, Weiwei Xie

Abstract: Results of crystallographic refinement, the relationship between electron counts and structural stability, and magnetic characterization of YT$_x$Ge$_2$ (T= Cr, Mn, Fe, Co, and Ni) prepared using the arc melting method are presented. These YT$_x$Ge$_2$ compounds crystallize in the BaCuSn$_2$-CeNi$_1$$_-$$_x$Si$_2$-type structure with space group Cmcm, and the site occupancies of 3d transition meta… ▽ More Results of crystallographic refinement, the relationship between electron counts and structural stability, and magnetic characterization of YT$_x$Ge$_2$ (T= Cr, Mn, Fe, Co, and Ni) prepared using the arc melting method are presented. These YT$_x$Ge$_2$ compounds crystallize in the BaCuSn$_2$-CeNi$_1$$_-$$_x$Si$_2$-type structure with space group Cmcm, and the site occupancies of 3d transition metals range from x = 0.22(1) for Cr to x = 0.66(1) for Ni. Based on a combination of single crystal and powder X-ray diffraction and scanning electron microscopy, the trends are clearly established that the smaller transition metal atoms exhibit larger occupancies on T (Cu) site. Our investigation into the relationship between electron count and site defect reveals that a stable configuration is obtained when reaching 10.3e- per transition metal (Y+T), which strongly correlates with the defect observed in the case of T metals. Magnetic properties measurements indicate paramagnetism for T = Cr, Fe, and Co, but ferromagnetism for T = Mn with a Curie temperature at 293 K and effective moment ~ 3.6 uB/Mn. The absence of superconductivity in this series is surprising because they consist of similar building blocks and electron counts to superconducting YGe$_1$$_.$$_5$$_+$$_d$Si$_2$ except for 3d transition metals. Introducing 3d transition metals into the system plays a critical role in suppressing superconductivity, offering new insights into the interplay between superconductivity and magnetism in layered intermetallics. △ Less

Submitted 22 December, 2017; originally announced December 2017.

Comments: 17 pages, 4 figures

Electron Mobility in Polarization-doped Al$\mathrm{_{0-0.2}}$GaN with a Low Concentration Near 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$

Authors: Mingda Zhu, Meng Qi, Kazuki Nomoto, Zongyang Hu, Bo Song, Ming Pan, Xiang Gao, Debdeep Jena, Huili Grace Xing

Abstract: In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type do** as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown by metal organic chemical vapor deposition on a sapphire substrate and a uniform n-type do** without any intentional do** is realized by linearly varying t… ▽ More In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type do** as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown by metal organic chemical vapor deposition on a sapphire substrate and a uniform n-type do** without any intentional do** is realized by linearly varying the Al composition from 0% to 20% over a thickness of 600 nm. A compensating center concentration of ~10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ was also estimated. A peak mobility of 900 cm$\mathrm{^2}$/V$\mathrm \cdot$s at room temperature is extracted at an Al composition of ~ 7%, which represents the highest mobility achieved in n-Al$\mathrm{_{0.07}}$GaN with a carrier concentration ~10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$. Comparison between experimental data and theoretical models shows that, at this low do** concentration, both dislocation scattering and alloy scattering are significant in limiting electron mobility; and that a dislocation density of <10$\mathrm{^7}$ cm$\mathrm{^{-2}}$ is necessary to optimize mobility near 10$\mathrm{^{16}}$ cm$\mathrm{^{-3}}$. The findings in this study provide insight in key elements for achieving high mobility at low do** levels in GaN, a critical parameter in design of novel power electronics taking advantage of polarization do**. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 6 figures. Submitted to Applied Physics Letters

Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect

Authors: Menghao Wu, Zhijun Wang, Junwei Liu, Huahua Fu, Lei Sun, Xin Liu, Minghu Pan, Hongming Weng, Mircea Dinca, Liang Fu, Ju Li

Abstract: Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, we predict electronic properties of M3C12S12 and M3C12O12, where M is Zn, Cd, Hg, Be, or Mg with no M orbital contributions to bands near Fermi level. For M3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n and p type, respectively, which are switchable by few-percent strain… ▽ More Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, we predict electronic properties of M3C12S12 and M3C12O12, where M is Zn, Cd, Hg, Be, or Mg with no M orbital contributions to bands near Fermi level. For M3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n and p type, respectively, which are switchable by few-percent strain. The crossing of two cones are symmetry-protected to be non-hybridizing, leading to two independent channels in 2D node-line semimetals at the same k-point akin to spin-channels in spintronics, rendering conetronics device possible. The node line rings right at their crossing, which are both electron and hole pockets at the Fermi level, can give rise to magnetoresistance that will not saturate when the magnetic field is infinitely large, due to perfect n-p compensation. For M3C12O12, together with conjugated metal-tricatecholate polymers M3(HHTP)2, the spin-polarized slow Dirac cone center is pinned precisely at the Fermi level, making the systems conducting in only one spin or cone channel. Quantum anomalous Hall effect can arise in MOFs with non-negligible spin-orbit coupling like Cu3C12O12. Compounds of M3C12S12 and M3C12O12 with different M, can be used to build spintronic and cone-selecting heterostructure devices, tunable by strain or electrostatic gating. △ Less

Submitted 11 June, 2016; originally announced June 2016.

Journal ref: 2D Materials 4, 015015(2017)

Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface

Authors: Qing Li, Jiaqiang Yan, Biao Yang, Yunyi Zang, Junjie Zhang, Ke He, Menghao Wu, Yanfei Zhao, David Mandrus, Jian Wang, Qikun Xue, Lifeng Chi, David J. Singh, Minghu Pan

Abstract: Semimetallic tungsten ditelluride (WTe2) displays an extremely large non-saturating magnetoresistance (XMR), which is the subject of intense interest. This phenomenon is thought to arise from the combination of perfect n-p charge compensation with low carrier densities in WTe2 and presumably details of its band structure. Recently, "spin texture" induced by strong spin-orbital coupling (SOC) has b… ▽ More Semimetallic tungsten ditelluride (WTe2) displays an extremely large non-saturating magnetoresistance (XMR), which is the subject of intense interest. This phenomenon is thought to arise from the combination of perfect n-p charge compensation with low carrier densities in WTe2 and presumably details of its band structure. Recently, "spin texture" induced by strong spin-orbital coupling (SOC) has been observed in WTe2 by angle-resolved photoemission spectroscopy (ARPES). This provides a mechanism for protecting backscattering for the states involved and thus was proposed to play an important role in the XMR of WTe2. Here, based on our density functional calculations for bulk WTe2, we found a strong Rashba spin-orbit effect in the calculated band structure due to its non-centrosymmetric structure. This splits bands and two-fold spin degeneracy of bands is lifted. A prominent Umklapp interference pattern (a spectroscopic feature with involving reciprocal lattice vectors) can be observed by scanning tunneling microscopic (STM) measurements on WTe2 surface at 4.2 K. This differs distinctly from the surface atomic structure demonstrated at 77 K. The energy dependence of Umklapp interference shows a strong correspondence with densities of states integrated from ARPES measurement, manifesting a fact that the bands are spin-split on the opposites side of Gamma point. Spectroscopic survey reveals the ratio of electron/hole asymmetry changes alternately with lateral locations along b axis, providing a microscopic picture for double-carrier transport of semimetallic WTe2. The calculated band structure and Fermi surface is further supported by our ARPES results and Shubnikov-de Haas (SdH) oscillations measurements. △ Less

Submitted 26 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 94, 115419 (2016)

On the role of chalcogen vapor annealing in inducing bulk superconductivity in Fe$_{1+y}$Te$_{1-x}$Se$_{x}$

Authors: Wenzhi Lin, P. Ganesh, Anthony Gianfrancesco, Jun Wang, Tom Berlijn, Thomas A. Maier, Sergei V. Kalinin, Brian C. Sales, Minghu Pan

Abstract: Recent investigations have shown that Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunn… ▽ More Recent investigations have shown that Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon we performed a combination of magnetic susceptibility, specific heat and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTe$_{m}$ (m $\geq$ 1) complexes. We show that the remaining FeTe$_{m}$ complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds. △ Less

Submitted 1 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 91, 060513(R) (2015)

Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals

Authors: Yanfei Zhao, Haiwen Liu, Jiaqiang Yan, Wei An, Jun Liu, Xi Zhang, Hua Jiang, Qing Li, Yong Wang, Xin-Zheng Li, David Mandrus, X. C. Xie, Minghu Pan, Jian Wang

Abstract: WTe2 semimetal, as a typical layered transition-metal dichalcogenide, has recently attracted much attention due to the extremely large, non-saturating parabolic magnetoresistance in perpendicular field. Here, we report a systematic study of the angular dependence of the magnetoresistance in WTe2 single crystal. The violation of the Kohler rule and a significant anisotropic magnetotransport behavio… ▽ More WTe2 semimetal, as a typical layered transition-metal dichalcogenide, has recently attracted much attention due to the extremely large, non-saturating parabolic magnetoresistance in perpendicular field. Here, we report a systematic study of the angular dependence of the magnetoresistance in WTe2 single crystal. The violation of the Kohler rule and a significant anisotropic magnetotransport behavior in different magnetic field directions are observed. Surprisingly, when the applied field is parallel to the tungsten chains of WTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at 15 T and 2 K is identified. Violation of the Kohler rule in transverse magnetoresistance can be understood based on a dual effect of the excitons formation and thermal activation, while large longitudinal linear magnetoresistance reflects perfectly the scattering and nesting of quasi-1D nature of this balanced hole-electron system. Our work will stimulate studies of such double-carrier correlated material and corresponding quantum physics. △ Less

Submitted 16 February, 2015; originally announced February 2015.

Journal ref: Phys. Rev. B 92, 041104 (2015)

Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate

Authors: Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, Hsun-Jen Chuang, Meeghage Madusanka Perera, Honggen Tu, Yong Xu, Minghu Pan, Di Xaio, Jiaqiang Yan, David Mandrus, Zhixian Zhou

Abstract: We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the multilayer MoSe2 devices on parylene-C show a room temperature mobility close to the mobility of bulk MoSe2 (100 cm2V-1s-1 - 160 cm2V-1s-1), which is significantly h… ▽ More We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the multilayer MoSe2 devices on parylene-C show a room temperature mobility close to the mobility of bulk MoSe2 (100 cm2V-1s-1 - 160 cm2V-1s-1), which is significantly higher than that on SiO2 substrate (~50 cm2V-1s-1). The room temperature mobility on both types of substrates are nearly thickness independent. Our variable temperature transport measurements reveal a metal-insulator transition at a characteristic conductivity of e2/h. The mobility of MoSe2 devices extracted from the metallic region on both SiO2 and parylene-C increases up to ~ 500 cm2V-1s-1 as the temperature decreases to ~ 100 K, with the mobility of MoSe2 on SiO2 increasing more rapidly. In spite of the notable variation of charged impurities as indicated by the strongly sample dependent low temperature mobility, the mobility of all MoSe2 devices on SiO2 converges above 200 K, indicating that the high temperature (> 200 K) mobility in these devices is nearly independent of the charged impurities. Our atomic force microscopy study of SiO2 and parylene-C substrates further rule out the surface roughness scattering as a major cause of the substrate dependent mobility. We attribute the observed substrate dependence of MoSe2 mobility primarily to the surface polar optical phonon scattering originating from the SiO2 substrate, which is nearly absent in MoSe2 devices on parylene-C substrate. △ Less

Submitted 14 April, 2014; originally announced April 2014.

Comments: 28 pages, 6 figures, accepted for publication in ACS Nano, 2014

Complex structures of different CaFe$_{2}$As$_{2}$ samples

Authors: Bayrammurad Saparov, Claudia Cantoni, Minghu Pan, Thomas C. Hogan, William Ratcliff II, Stephen D. Wilson, Katharina Fritsch, Bruce D. Gaulin, Athena S. Sefat

Abstract: The interplay between magnetism and crystal structures in three CaFe$_{2}$As$_{2}$ samples is studied. For the nonmagnetic quenched crystals, different crystalline domains with varying lattice parameters are found, and three phases (orthorhombic, tetragonal, and collapsed tetragonal) coexist between T$_{S}$ = 95 K and 45 K. Annealing of the quenched crystals at 350°C leads to a strain relief throu… ▽ More The interplay between magnetism and crystal structures in three CaFe$_{2}$As$_{2}$ samples is studied. For the nonmagnetic quenched crystals, different crystalline domains with varying lattice parameters are found, and three phases (orthorhombic, tetragonal, and collapsed tetragonal) coexist between T$_{S}$ = 95 K and 45 K. Annealing of the quenched crystals at 350°C leads to a strain relief through a large (~1.3 %) expansion of the c-parameter and a small (~0.2 %) contraction of the a-parameter, and to local ~0.2 Å displacements at the atomic-level. This annealing procedure results in the most homogeneous crystals for which the antiferromagnetic and orthorhombic phase transitions occur at T$_{N}$/T$_{S}$ = 168(1) K. In the 700°C-annealed crystal, an intermediate strain regime takes place, with tetragonal and orthorhombic structural phases coexisting between 80 to 120 K. The origin of such strong shifts in the transition temperatures are tied to structural parameters. Importantly, with annealing, an increase in the Fe-As length leads to more localized Fe electrons and higher local magnetic moments on Fe ions. Synergistic contribution of other structural parameters, including a decrease in the Fe-Fe distance, and a dramatic increase of the c-parameter, which enhances the Fermi surface nesting in CaFe$_{2}$As$_{2}$, are also discussed. △ Less

Submitted 18 February, 2014; originally announced February 2014.

Comments: 5 pages main text, 5 figures and 6 pages Supporting Information

Journal ref: Scientific Reports 2014, 4, 4120

Local inhomogeneity and filamentary superconductivity in Pr-doped CaFe$_{2}$As$_{2}$

Authors: Krzysztof Gofryk, Minghu Pan, Claudia Cantoni, Bayrammurad Saparov, Jonathan E. Mitchell, Athena S. Sefat

Abstract: We use multi-scale techniques to determine the extent of local inhomogeneity and superconductivity in Ca$_{0.86}$Pr$_{0.14}$Fe$_{2}$As$_{2}$ single crystal. The inhomogeneity is manifested as a spatial variation of praseodymium concentration, local density of states, and superconducting order parameter. We show that the high-$T_{c}$ superconductivity emerges from clover-like defects associated wit… ▽ More We use multi-scale techniques to determine the extent of local inhomogeneity and superconductivity in Ca$_{0.86}$Pr$_{0.14}$Fe$_{2}$As$_{2}$ single crystal. The inhomogeneity is manifested as a spatial variation of praseodymium concentration, local density of states, and superconducting order parameter. We show that the high-$T_{c}$ superconductivity emerges from clover-like defects associated with Pr dopants. The highest $T_{c}$ is observed in both the tetragonal and collapsed tetragonal phases, and its filamentary nature is a consequence of non-uniform Pr distribution that develops localized, isolated superconducting regions within the crystals. △ Less

Submitted 7 January, 2014; originally announced January 2014.

Comments: Accepted for publication in Phys. Rev. Lett. (January 6, 2014)

Journal ref: Phys. Rev. Lett. 112, 047005 (2014)

Microscopic and Spectroscopic Evidence for a Slater Metal-Insulator Transition in Sr2IrO4

Authors: Qing Li, Guixin Cao, Satoshi Okamoto, Jieyu Yi, Wenzhi Lin, Brian C. Sales, Jiaqiang Yan, Ryotaro Arita, Jan Kunes, Anton V. Kozhevnikov, Adolfo G. Eguiluz, Masatoshi Imada, Zheng Gai, Minghu Pan, David G. Mandrus

Abstract: Layered 5d transition metal oxides (TMOs) have attracted significant interest in recent years because of the rich physical properties induced by the interplay between spin-orbit coupling, bandwidth and on-site Coulomb repulsion. In Sr2IrO4, this interplay opens a gap near the Fermi energy and stabilizes a Jeff=1/2 spin-orbital entangled insulating state at low temperatures. Whether this metal-insu… ▽ More Layered 5d transition metal oxides (TMOs) have attracted significant interest in recent years because of the rich physical properties induced by the interplay between spin-orbit coupling, bandwidth and on-site Coulomb repulsion. In Sr2IrO4, this interplay opens a gap near the Fermi energy and stabilizes a Jeff=1/2 spin-orbital entangled insulating state at low temperatures. Whether this metal-insulating transition (MIT) is Mott-type (electronic-correlation driven) or Slater-type (magnetic-order driven) has been under intense debate. We address this issue via spatially resolved imaging and spectroscopic studies of the Sr2IrO4 surface using scanning tunneling microscopy/spectroscopy (STM/S). The STS results clearly illustrate the opening of the (~150-250 meV) insulating gap at low temperatures, in qualitative agreement with our density-functional theory (DFT) calculations. More importantly, the measured temperature dependence of the gap width coupled with our DFT+dynamical mean field theory (DMFT) results strongly support the Slater-type MIT scenario in Sr2IrO4. The STS data further reveal a pseudogap structure above the Neel temperature, presumably related to the presence of antiferromagnetic fluctuations. △ Less

Submitted 3 April, 2013; v1 submitted 28 March, 2013; originally announced March 2013.

Temperature-composition Phase Diagrams for Ba1-xSrxFe2As2 and Ba0.5Sr0.5(Fe1-yCoy)2As2

Authors: Jonathan E. Mitchell, Bayrammurad Saparov, Wenzhi Lin, Stuart Calder, Qing Li, Sergei V. Kalinin, Minghu Pan, Andrew D. Christianson, Athena S. Sefat

Abstract: Single crystals of mixed alkaline earth metal iron arsenide materials of Ba1-xSrxFe2As2 and Ba0.5Sr0.5(Fe1-yCoy)2As2 are synthesized via the self-flux method. Ba1-xSrxFe2As2 display spin-density wave features (TN) at temperatures intermediate to the parent materials, x = 0 and 1, with TN(x) following an approximately linear trend. Cobalt do** of the 1 to 1 Ba:Sr mixture, Ba0.5Sr0.5(Fe1-yCoy)2As2… ▽ More Single crystals of mixed alkaline earth metal iron arsenide materials of Ba1-xSrxFe2As2 and Ba0.5Sr0.5(Fe1-yCoy)2As2 are synthesized via the self-flux method. Ba1-xSrxFe2As2 display spin-density wave features (TN) at temperatures intermediate to the parent materials, x = 0 and 1, with TN(x) following an approximately linear trend. Cobalt do** of the 1 to 1 Ba:Sr mixture, Ba0.5Sr0.5(Fe1-yCoy)2As2, results in a superconducting dome with maximum transition temperature of TC = 19 K at y = 0.092, close to the maximum transition temperatures observed in unmixed A(Fe1-yCoy)2As2; however, an annealed crystal with y = 0.141 showed a TC increase from 11 to 16 K with a decrease in Sommerfeld coefficient from 2.58(2) to 0.63(2) mJ/(K2 mol atom). For the underdoped y = 0.053, neutron diffraction results give evidence that TN and structural transition (To) are linked at 78 K, with anomalies observed in magnetization, resistivity and heat capacity data, while a superconducting transition at TC ~ 6 K is seen in resistivity and heat capacity data. Scanning tunneling microscopy measurements for y = 0.073 give Dynes broadening factor of 1.15 and a superconducting gap of 2.37 meV with evidence of surface inhomogeneity. △ Less

Submitted 24 October, 2012; originally announced October 2012.

Comments: Submitted to PRB

Journal ref: Phys. Rev. B 86 (2012), 174511

Probing Local Variations of Superconductivity on the Surface of Ba(Fe1-xCox)2As2 Single Crystals

Authors: T. -H. Kim, R. **, L. R. Walker, J. Y. Howe, M. H. Pan, J. F. Wendelken, J. R. Thompson, A. S. Sefat, M. A. McGuire, B. C. Sales, D. Mandrus, A. P. Li

Abstract: The spatially resolved electrical transport properties have been studied on the surface of optimally-doped superconducting Ba(Fe1-xCox)2As2 single crystal by using a four-probe scanning tunneling microscopy. While some non-uniform contrast appears near the edge of the cleaved crystal, the scanning electron microscopy (SEM) reveals mostly uniform contrast. For the regions that showed uniform SEM… ▽ More The spatially resolved electrical transport properties have been studied on the surface of optimally-doped superconducting Ba(Fe1-xCox)2As2 single crystal by using a four-probe scanning tunneling microscopy. While some non-uniform contrast appears near the edge of the cleaved crystal, the scanning electron microscopy (SEM) reveals mostly uniform contrast. For the regions that showed uniform SEM contrast, a sharp superconducting transition at TC = 22.1 K has been observed with a transition width (delta)Tc = 0.2 K. In the non-uniform contrast region, TC is found to vary between 19.6 and 22.2 K with (delta)Tc from 0.3 to 3.2 K. The wavelength dispersive x-ray spectroscopy reveals that Co concentration remains 7.72% in the uniform region, but changes between 7.38% and 7.62% in the non-uniform region. Thus the variations of superconductivity are associated with local compositional change. △ Less

Submitted 1 March, 2010; originally announced March 2010.

Comments: 18 pages, 5 figures

Journal ref: Phys. Rev. B 80, 214518 (2009)

Surface Geometric and Electronic Structure of BaFe2As2(001)

Authors: V. B. Nascimento, Ang Li, Dilushan R. Jayasundara, Yi Xuan, Jared O'Neal, Shuheng Pan, T. Y. Chien, Biao Hu, X. B. He, Guorong Li, A. S. Sefat, M. A. McGuire, B. C. Sales, D. Mandrus, M. H. Pan, Jiandi Zhang, R. **, E. W. Plummer

Abstract: BaFe2As2 exhibits properties characteristic of the parent compounds of the newly discovered iron (Fe)-based high-TC superconductors. By combining the real space imaging of scanning tunneling microscopy/spectroscopy (STM/S) with momentum space quantitative Low Energy Electron Diffraction (LEED) we have identified the surface plane of cleaved BaFe2As2 crystals as the As terminated Fe-As layer - th… ▽ More BaFe2As2 exhibits properties characteristic of the parent compounds of the newly discovered iron (Fe)-based high-TC superconductors. By combining the real space imaging of scanning tunneling microscopy/spectroscopy (STM/S) with momentum space quantitative Low Energy Electron Diffraction (LEED) we have identified the surface plane of cleaved BaFe2As2 crystals as the As terminated Fe-As layer - the plane where superconductivity occurs. LEED and STM/S data on the BaFe2As2(001) surface indicate an ordered arsenic (As) - terminated metallic surface without reconstruction or lattice distortion. It is surprising that the STM images the different Fe-As orbitals associated with the orthorhombic structure, not the As atoms in the surface plane. △ Less

Submitted 19 May, 2009; originally announced May 2009.

Comments: 12 pages, 4 figures

Temperature and Spatial Dependence of the Superconducting and Pseudogap of NdFeAsO0.86F0.14

Authors: M. H. Pan, X. B. He, G. R. Li, J. F. Wendelken, R. **, A. S. Sefat, M. A. McGuire, B. C. Sales, D. Mandrus, E. W. Plummer

Abstract: The discovery of superconductivity with a critical temperature exceeding 55 K in the iron-oxypnictides and related compounds has quite suddenly given the community a new set of materials - breaking the tyranny of copper. This new class of materials raises fundamental questions related to the origin of the electron pairing in the superconducting state and to the similarity to superconductivity in… ▽ More The discovery of superconductivity with a critical temperature exceeding 55 K in the iron-oxypnictides and related compounds has quite suddenly given the community a new set of materials - breaking the tyranny of copper. This new class of materials raises fundamental questions related to the origin of the electron pairing in the superconducting state and to the similarity to superconductivity in the cuprates. Here, we report spatially resolved measurements using scanning tunneling microscopy/spectroscopy (STM/STS) of the newly discovered iron-based layered superconductor NdFeAsO0.86F0.14 (Tc = 48 K) as a function of temperature. The tunneling spectra at 17 K show a suppression of spectral intensity within +/- 10 meV, indicative of the opening of the superconducting gap (SG). Below Tc, the sample exhibits two characteristic gaps - a large one (18 meV) and a small one (9 meV) - existing in different spatial locations. Both gaps are closed above Tc at the bulk Tc, but only the small gap can be fitted with a superconducting gap function. This gap displays a BCS - like order parameter. Above Tc, at the same location where the small gap was observed, a pseudogap (PG) opens abruptly at a temperature just above Tc and closes at 120 K. In contrast to the cuprates, the SG and PG have competing order parameters. △ Less

Submitted 6 August, 2008; originally announced August 2008.

Comments: 18 pages, 5 figures

The origin of paramagnetic magnetization in field-cooled YBa2Cu3O7 films

Authors: D. A. Luzhbin, A. V. Pan, V. A. Komashko, V. S. Flis, V. M. Pan, S. X. Dou, P. Esquinazi

Abstract: Temperature dependences of the magnetic moment have been measured in YBa_2Cu_3O_{7-δ} thin films over a wide magnetic field range (5 <= H <= 10^4 Oe). In these films a paramagnetic signal known as the paramagnetic Meissner effect has been observed. The experimental data in the films, which have strong pinning and high critical current densities (J_c ~ 2 \times 10^6 A/cm^2 at 77 K), are quantitat… ▽ More Temperature dependences of the magnetic moment have been measured in YBa_2Cu_3O_{7-δ} thin films over a wide magnetic field range (5 <= H <= 10^4 Oe). In these films a paramagnetic signal known as the paramagnetic Meissner effect has been observed. The experimental data in the films, which have strong pinning and high critical current densities (J_c ~ 2 \times 10^6 A/cm^2 at 77 K), are quantitatively shown to be highly consistent with the theoretical model proposed by Koshelev and Larkin [Phys. Rev. B 52, 13559 (1995)]. This finding indicates that the origin of the paramagnetic effect is ultimately associated with nucleation and inhomogeneous spatial redistribution of magnetic vortices in a sample which is cooled down in a magnetic field. It is also shown that the distribution of vortices is extremely sensitive to the interplay of film properties and the real experimental conditions of the measurements. △ Less

Submitted 27 June, 2003; originally announced June 2003.

Comments: RevTex, 8 figures

Journal ref: Phys. Rev. B 69, 024506 (2004)

Effect of the sample geometry on the second magnetization peak in single crystalline Ba$_{0.63}$K$_{0.37}$BiO$_3$ thick film

Authors: A. Yu. Galkin, Y. Kopelevich, P. Esquinazi, A. Setzer, V. M. Pan, S. N. Barilo

Abstract: Magnetization hysteresis loop $M(H)$ measurements performed on a single crystalline Ba$_{0.63}$K$_{0.37}$BiO$_3$ superconducting thick film reveal pronounced sample geometry dependence of the "second magnetization peak" (SMP), i.e. a maximum in the width of $M(H)$ occurring at the field $H_{\rm SMP}(T)$. In particular, it is found that the SMP vanishes decreasing the film dimension. We argue tha… ▽ More Magnetization hysteresis loop $M(H)$ measurements performed on a single crystalline Ba$_{0.63}$K$_{0.37}$BiO$_3$ superconducting thick film reveal pronounced sample geometry dependence of the "second magnetization peak" (SMP), i.e. a maximum in the width of $M(H)$ occurring at the field $H_{\rm SMP}(T)$. In particular, it is found that the SMP vanishes decreasing the film dimension. We argue that the observed sample geometry dependence of the SMP cannot be accounted for by models which assume a vortex pinning enhancement as the origin of the SMP. Our results can be understood considering the thermomagnetic instability effect and/or non-uniform current distribution at $H < H_{\rm SMP}$ in large enough samples. △ Less

Submitted 20 December, 1999; originally announced December 1999.

Comments: 8 pages 3 figures

Journal ref: Sol. State Commun. 114, 1 (2000)