Showing 1–45 of 45 results for author: Paik, H

Inducing a Tunable Skyrmion-Antiskyrmion System through Ion Beam Modification of FeGe Films

Authors: M. B. Venuti, Xiyue S. Zhang, Eric J Lang, Sadhvikas J. Addamane, Hanjong Paik, Portia Allen, Peter Sharma, David Muller, Khalid Hattar, Tzu-Ming Lu, Serena Eley

Abstract: Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we mu… ▽ More Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals -- determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and anitskyrmions as storage bits and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals. △ Less

Submitted 14 April, 2024; v1 submitted 21 November, 2023; originally announced November 2023.

Atomically smooth films of CsSb: a chemically robust visible light photocathode

Authors: C. T. Parzyck, C. A. Pennington, W. J. I. DeBenedetti, J. Balajka, E. Echeverria, H. Paik, L. Moreschini, B. D. Faeth, C. Hu, J. K. Nangoi, V. Anil, T. A. Arias, M. A. Hines, D. G. Schlom, A. Galdi, K. M. Shen, J. M. Maxson

Abstract: Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and co… ▽ More Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and contamination, must be overcome. By exploring the growth of CsxSb thin films monitored by in situ electron diffraction, the conditions to reproducibly synthesize atomically smooth films of CsSb on 3C-SiC (100) and graphene coated TiO2 (110) substrates are identified, and detailed structural, morphological, and electronic characterization is presented. These films combine high quantum efficiency in the visible (up to 1.2% at 400 nm), an easily accessible photoemission threshold of 550 nm, low surface roughness (down to 600 pm on a 1 um scale), and a robustness against oxidation up to 15 times greater then Cs3Sb. These properties suggest that CsSb has the potential to operate as an alternative to Cs$_3$Sb in electron source applications where the demands of the vacuum environment might otherwise preclude the use of traditional alkali antimonides. △ Less

Submitted 31 May, 2023; originally announced May 2023.

Comments: 11 pages, 6 figures, 1 table

Journal ref: APL Mater. 11, 101125 (2023)

Limits to the strain engineering of layered square-planar nickelate thin films

Authors: Dan Ferenc Segedin, Berit H. Goodge, Grace A. Pan, Qi Song, Harrison LaBollita, Myung-Chul Jung, Hesham El-Sherif, Spencer Doyle, Ari Turkiewicz, Nicole K. Taylor, Jarad A. Mason, Alpha T. N'Diaye, Hanjong Paik, Ismail El Baggari, Antia S. Botana, Lena F. Kourkoutis, Charles M. Brooks, Julia A. Mundy

Abstract: The layered square-planar nickelates, Nd$_{n+1}$Ni$_{n}$O$_{2n+2}$, are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed, superconductivity was recently observed in Nd$_{6}$Ni$_{5}$O$_{12}$ thin films. Here, we investigate the role of epitaxial strain in the competing requirements for the synthesis of the $n=3$ Ruddlesden-Popper compound,… ▽ More The layered square-planar nickelates, Nd$_{n+1}$Ni$_{n}$O$_{2n+2}$, are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed, superconductivity was recently observed in Nd$_{6}$Ni$_{5}$O$_{12}$ thin films. Here, we investigate the role of epitaxial strain in the competing requirements for the synthesis of the $n=3$ Ruddlesden-Popper compound, Nd$_{4}$Ni$_{3}$O$_{10}$, and subsequent reduction to the square-planar phase, Nd$_{4}$Ni$_{3}$O$_{8}$. We synthesize our highest quality Nd$_{4}$Ni$_{3}$O$_{10}$ films under compressive strain on LaAlO$_{3}$ (001), while Nd$_{4}$Ni$_{3}$O$_{10}$ on NdGaO$_{3}$ (110) exhibits tensile strain-induced rock salt faults but retains bulk-like transport properties. A high density of extended defects forms in Nd$_{4}$Ni$_{3}$O$_{10}$ on SrTiO$_{3}$ (001). Films reduced on LaAlO$_{3}$ become insulating and form compressive strain-induced $c$-axis canting defects, while Nd$_{4}$Ni$_{3}$O$_{8}$ films on NdGaO$_{3}$ are metallic. This work provides a pathway to the synthesis of Nd$_{n+1}$Ni$_{n}$O$_{2n+2}$ thin films and sets limits on the ability to strain engineer these compounds via epitaxy. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Journal ref: Nat Commun 14, 1468 (2023)

Molecular Beam Epitaxy of KTaO$_3$

Authors: Tobias Schwaigert, Salva Salmani-Razaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi

Abstract: Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 co… ▽ More Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10 \% O3 + 90 \% O2) were simultaneously supplied with the TaO$_2$ (or tantalum) molecular beams to grow the KTaO$_3$ films. Laue fringes suggest that the films are smooth with an abrupt film/substrate interface. Cross-sectional scanning transmission electron microscopy does not show any extended defects and confirms that the films have an atomically abrupt interface with the substrate. Atomic force microscopy reveals atomic steps at the surface of the grown films. Reciprocal space map** demonstrates that the films, when sufficiently thin, are coherently strained to the SrTiO$_3$ (001) and GdScO$_3$ (110) substrates. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Antiferromagnetic metal phase in an electron-doped rare-earth nickelate

Authors: Qi Song, Spencer Doyle, Grace A. Pan, Ismail El Baggari, Dan Ferenc Segedin, Denisse Cordova Carrizales, Johanna Nordlander, Christian Tzschaschel, James R. Ehrets, Zubia Hasan, Hesham El-Sherif, Jyoti Krishna, Chase Hanson, Harrison LaBollita, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Su-Yang Xu, Alessandra Lanzara, Alpha T. N'Diaye, Colin A. Heikes, Yaohua Liu, Hanjong Paik, Charles M. Brooks, Betul Pamuk , et al. (6 additional authors not shown)

Abstract: Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric sp… ▽ More Long viewed as passive elements, antiferromagnetic materials have emerged as promising candidates for spintronic devices due to their insensitivity to external fields and potential for high-speed switching. Recent work exploiting spin and orbital effects has identified ways to electrically control and probe the spins in metallic antiferromagnets, especially in noncollinear or noncentrosymmetric spin structures. The rare earth nickelate NdNiO3 is known to be a noncollinear antiferromagnet where the onset of antiferromagnetic ordering is concomitant with a transition to an insulating state. Here, we find that for low electron do**, the magnetic order on the nickel site is preserved while electronically a new metallic phase is induced. We show that this metallic phase has a Fermi surface that is mostly gapped by an electronic reconstruction driven by the bond disproportionation. Furthermore, we demonstrate the ability to write to and read from the spin structure via a large zero-field planar Hall effect. Our results expand the already rich phase diagram of the rare-earth nickelates and may enable spintronics applications in this family of correlated oxides. △ Less

Submitted 14 November, 2022; originally announced November 2022.

Comments: 25 pages, 4 figures

Seebeck coefficient in a nickelate superconductor: electronic dispersion in the strange metal phase

Authors: G. Grissonnanche, G. A. Pan, H. LaBollita, D. Ferenc Segedin, Q. Song, H. Paik, C. M. Brooks, A. S. Botana, J. A. Mundy, B. J. Ramshaw

Abstract: Superconducting nickelates are a new family of materials that combine strongly-correlated magnetism with unconventional superconductivity. While comparisons with the superconducting cuprates are natural, very little is known about the metallic state of the nickelates, making these comparisons difficult. We probe the electronic dispersion of thin-film superconducting 5-layer ($n=5$) and metallic 3-… ▽ More Superconducting nickelates are a new family of materials that combine strongly-correlated magnetism with unconventional superconductivity. While comparisons with the superconducting cuprates are natural, very little is known about the metallic state of the nickelates, making these comparisons difficult. We probe the electronic dispersion of thin-film superconducting 5-layer ($n=5$) and metallic 3-layer ($n=3$) nickelates by measuring the Seebeck coefficient, $S$. We find a temperature independent and negative $S/T$ for both the $n=5$ nickelate, with strange metal resistivity, and the $n=3$ compound, with more conventional Fermi liquid resistivity. These results are in stark contrast with the strongly temperature-dependent $S/T$ measured at similar electron filling in the cuprate La$_{1.36}$Nd$_{0.4}$Sr$_{0.24}$CuO$_4$. We reproduce the temperature dependence, sign, and amplitude of $S/T$ in the nickelates using Boltzmann transport theory combined with the electronic structure calculated from density functional theory. This demonstrates that the electronic structure obtained from first-principles calculations is a good starting point for calculating the transport properties of superconducting nickelates, and suggests that, despite indications of strong electronic correlations, there are well-defined quasiparticles in the metallic state of this family of materials. Finally, we explain the differences in the Seebeck coefficient between nickelates and cuprates as originating in strong dissimilarities in impurity concentrations. Beyond establishing a baseline understanding of how the electronic structure relates to transport coefficients in these new materials, this work demonstrates the power of the semi-classical approach to quantitatively describe transport measurements, even in the strange-metallic state. △ Less

Submitted 2 February, 2023; v1 submitted 19 October, 2022; originally announced October 2022.

Comments: 10 pages, 7 figures

High Mobility Two-Dimensional Electron Gas at the BaSnO$_{3}$/SrNbO$_{3}$ Interface

Authors: Sharad Mahatara, Suresh Thapa, Hanjong Paik, Ryan Comes, Boris Kiefer

Abstract: Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronic states. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eV below the Ferm… ▽ More Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronic states. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eV below the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cell SNO superlattices, corresponding to an electron density in BSO of ~10$^{21}$ cm$^{-3}$. Experimental studies of analogous SNO/BSO interfaces grown by molecular beam epitaxy confirm significant charge transfer from SNO to BSO. $\textit {In situ}$ angle-resolved X-ray photoelectron spectroscopy studies show an electron density of ~4 $\times$ 10$^{21}$ cm$^{-3}$. The consistency of theory and experiment shows that BSO/SNO interfaces provide a novel materials platform for low loss electron transport in 2DEGs. △ Less

Submitted 23 June, 2022; originally announced June 2022.

Comments: There are 7 Figures, 1 Table and 10 pages

Synthesis and electronic properties of Nd$_{n+1}$Ni$_{n}$O$_{3n+1}$ Ruddlesden-Popper nickelate thin films

Authors: Grace A. Pan, Qi Song, Dan Ferenc Segedin, Myung-Chul Jung, Hesham El-Sherif, Erin E. Fleck, Berit H. Goodge, Spencer Doyle, Denisse Córdova Carrizales, Alpha T. N'Diaye, Padraic Shafer, Hanjong Paik, Lena F. Kourkoutis, Ismail El Baggari, Antia S. Botana, Charles M. Brooks, Julia A. Mundy

Abstract: The rare-earth nickelates possess a diverse set of collective phenomena including metal-to-insulator transitions, magnetic phase transitions, and, upon chemical reduction, superconductivity. Here, we demonstrate epitaxial stabilization of layered nickelates in the Ruddlesden-Popper form, Nd$_{n+1}$Ni$_n$O$_{3n+1}$, using molecular beam epitaxy. By optimizing the stoichiometry of the parent perovsk… ▽ More The rare-earth nickelates possess a diverse set of collective phenomena including metal-to-insulator transitions, magnetic phase transitions, and, upon chemical reduction, superconductivity. Here, we demonstrate epitaxial stabilization of layered nickelates in the Ruddlesden-Popper form, Nd$_{n+1}$Ni$_n$O$_{3n+1}$, using molecular beam epitaxy. By optimizing the stoichiometry of the parent perovskite NdNiO$_3$, we can reproducibly synthesize the $n = 1 - 5$ member compounds. X-ray absorption spectroscopy at the O $K$ and Ni $L$ edges indicate systematic changes in both the nickel-oxygen hybridization level and nominal nickel filling from 3$d^8$ to 3$d^7$ as we move across the series from $n = 1$ to $n = \infty$. The $n = 3 - 5$ compounds exhibit weakly hysteretic metal-to-insulator transitions with transition temperatures that depress with increasing order toward NdNiO$_3$ ($n = \infty)$. △ Less

Submitted 18 May, 2022; originally announced May 2022.

Comments: 11 pages, 4 figures with Supplemental Information

Journal ref: Phys. Rev. Materials 6, 055003 (2022)

A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit

Authors: C. T. Parzyck, A. Galdi, J. K. Nangoi, W. J. I. DeBenedetti, J. Balajka, B. D. Faeth, H. Paik, C. Hu, T. A. Arias, M. A. Hines, D. G. Schlom, K. M. Shen, J. M. Maxson

Abstract: The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films… ▽ More The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers. △ Less

Submitted 28 December, 2021; originally announced December 2021.

Comments: Submitted Manuscript: 8 pages, 4 figures

Oxide two-dimensional electron gas with high mobility at room-temperature

Authors: Kitae Eom, Hanjong Paik, **sol Seo, Neil Campbell, Evgeny Y. Tsymbal, Sang Ho Oh, Mark Rzchowski, Darrell G. Schlom, Chang-beom Eom

Abstract: The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO… ▽ More The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/V s at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. We achieved this by combining a thick BSO buffer layer with an ex-situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak-beam dark field imaging and in-line electron holography technique, we reveal a reduction of the threading dislocation density, and provide direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface. Our work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Comments: 21 pages, 5 figures

Optimization of the resonator-induced phase gate for superconducting qubits

Authors: Moein Malekakhlagh, William Shanks, Hanhee Paik

Abstract: The resonator-induced phase gate is a two-qubit operation in which driving a bus resonator induces a state-dependent phase shift on the qubits equivalent to an effective $ZZ$ interaction. In principle, the dispersive nature of the gate offers flexibility for qubit parameters. However, the drive can cause resonator and qubit leakage, the physics of which cannot be fully captured using either the ex… ▽ More The resonator-induced phase gate is a two-qubit operation in which driving a bus resonator induces a state-dependent phase shift on the qubits equivalent to an effective $ZZ$ interaction. In principle, the dispersive nature of the gate offers flexibility for qubit parameters. However, the drive can cause resonator and qubit leakage, the physics of which cannot be fully captured using either the existing Jaynes-Cummings or Kerr models. In this paper, we adopt an ab-initio model based on Josephson nonlinearity for transmon qubits. The ab-initio analysis agrees well with the Kerr model in terms of capturing the effective $ZZ$ interaction in the weak-drive dispersive regime. In addition, however, it reveals numerous leakage transitions involving high-excitation qubit states. We analyze the physics behind such novel leakage channels, demonstrate the connection with specific qubits-resonator frequency collisions, and lay out a plan towards device parameter optimization. We show this type of leakage can be substantially suppressed using very weakly anharmonic transmons. In particular, weaker qubit anharmonicity mitigates both collision density and leakage amplitude, while larger qubit frequency moves the collisions to occur only at large anharmonicity not relevant to experiment. Our work is broadly applicable to the physics of weakly anharmonic transmon qubits coupled to linear resonators. In particular, our analysis confirms and generalizes the measurement-induced state transitions noted in Sank et al. (Phys. Rev. Lett. 117, 190503) and lays the groundwork for both strong-drive resonator-induced phase gate implementation and strong-drive dispersive qubit measurement. △ Less

Submitted 4 October, 2021; originally announced October 2021.

Comments: 34 pages, 10 appendices, 18 figures, 3 tables

Superconductivity in a quintuple-layer square-planar nickelate

Authors: Grace A. Pan, Dan Ferenc Segedin, Harrison LaBollita, Qi Song, Emilian M. Nica, Berit H. Goodge, Andrew T. Pierce, Spencer Doyle, Steve Novakov, Denisse Córdova Carrizales, Alpha T. N'Diaye, Padraic Shafer, Hanjong Paik, John T. Heron, Jarad A. Mason, Amir Yacoby, Lena F. Kourkoutis, Onur Erten, Charles M. Brooks, Antia S. Botana, Julia A. Mundy

Abstract: Since the discovery of high-temperature superconductivity in the copper oxide materials, there have been sustained efforts to both understand the origins of this phase and discover new cuprate-like superconducting materials. One prime materials platform has been the rare-earth nickelates and indeed superconductivity was recently discovered in the doped compound Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. Undoped… ▽ More Since the discovery of high-temperature superconductivity in the copper oxide materials, there have been sustained efforts to both understand the origins of this phase and discover new cuprate-like superconducting materials. One prime materials platform has been the rare-earth nickelates and indeed superconductivity was recently discovered in the doped compound Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. Undoped NdNiO$_2$ belongs to a series of layered square-planar nickelates with chemical formula Nd$_{n+1}$Ni$_n$O$_{2n+2}$ and is known as the 'infinite-layer' ($n = \infty$) nickelate. Here, we report the synthesis of the quintuple-layer ($n = 5$) member of this series, Nd$_6$Ni$_5$O$_{12}$, in which optimal cuprate-like electron filling ($d^{8.8}$) is achieved without chemical do**. We observe a superconducting transition beginning at $\sim$13 K. Electronic structure calculations, in tandem with magnetoresistive and spectroscopic measurements, suggest that Nd$_6$Ni$_5$O$_{12}$ interpolates between cuprate-like and infinite-layer nickelate-like behavior. In engineering a distinct superconducting nickelate, we identify the square-planar nickelates as a new family of superconductors which can be tuned via both do** and dimensionality. △ Less

Submitted 20 September, 2021; originally announced September 2021.

Comments: 21 pages, 4 figures

Journal ref: Nature Materials (2021)

Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO$_2$

Authors: S. Chae, K. A. Mengle, K. Bushick, J. Lee, N. Sanders, Z. Deng, Z. Mi, P. F. P. Poudeu, H. Paik, J. T. Heron, E. Kioupakis

Abstract: Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMO… ▽ More Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials limitations with regards to their do** asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar do** of UWBG materials will enable a wider range of applications in power electronics as well as deep- UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved do** and transport properties. As an example, we discuss the case of rutile GeO$_2$ (r-GeO$_2$), a water-insoluble GeO$_2$ polytype which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than \b{eta}-Ga$_2$O$_3$. The subsequent realization of single-crystalline r-GeO$_2$ thin films by molecular beam epitaxy provides the opportunity to realize r-GeO$_2$ for electronic applications. Future efforts towards the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled do** in high-quality thin films with lower dislocation densities and optimized film properties. △ Less

Submitted 1 July, 2021; v1 submitted 14 May, 2021; originally announced May 2021.

Comments: 30 pages, 5 figures

Journal ref: Appl. Phys. Lett. 118, 260501 (2021)

Investigating microwave loss of SiGe using superconducting transmon qubits

Authors: Martin Sandberg, Vivekananda P. Adiga, Markus Brink, Cihan Kurter, Conal Murray, Marinus Hopstaken, John Bruley, Jason Orcutt, Hanhee Paik

Abstract: Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of Si… ▽ More Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving superconducting quantum computing. Here we demonstrate the fabrication of transmon quantum bits on SiGe layers and investigate the microwave loss properties of SiGe at cryogenic temperatures and single photon microwave powers. We find relaxation times of up to 100 $μ$s, corresponding to a quality factor Q above 4 M for large pad transmons. The high Q values obtained indicate that the SiGe/Si heterostructure is compatible with state of the art performance of superconducting quantum circuits. △ Less

Submitted 5 March, 2021; originally announced March 2021.

Comments: 5 pages, 3 figures

The Breakdown of Mott Physics at VO$_2$ Surfaces

Authors: Matthew J. Wahila, Nicholas F. Quackenbush, Jerzy T. Sadowski, Jon-Olaf Krisponeit, Jan Ingo Flege, Richard Tran, Shyue ** Ong, Christoph Schlueter, Tien-Lin Lee, Megan E. Holtz, David A. Muller, Hanjong Paik, Darrell G. Schlom, Wei-Cheng Lee, Louis F. J. Piper

Abstract: Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Usin… ▽ More Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural transition within their bulk. However, it is not typically discussed how breaking crystal symmetry via surface termination affects the complicated MIT physics. Using synchrotron-based x-ray spectroscopy, low energy electron diffraction (LEED), low energy electron microscopy (LEEM), transmission electron microscopy (TEM), and several other experimental techniques, we show that suppression of the bulk structural transition is a common feature at VO$_2$ surfaces. Our density functional theory (DFT) calculations further suggest that this is due to inherent reconstructions necessary to stabilize the surface, which deviate the electronic structure away from the bulk d$^1$ configuration. Our findings have broader ramifications not only for the characterization of other "Mott-like" MITs, but also for any potential device applications of such materials. △ Less

Submitted 9 December, 2020; originally announced December 2020.

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

Abstract: This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a… ▽ More This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. △ Less

Submitted 30 October, 2020; originally announced November 2020.

Comments: 15 pages, 12 figures

Unraveling the role of V-V dimer on the vibrational properties of VO$_2$ by first-principles simulations and Raman spectroscopic analysis

Authors: Wasim Raja Mondal, Egor Evlyukhin, Sebastian A. Howard, Galo J. Paez, Hanjong Paik, Darrell G. Schlom, Louis F J Piper, Wei-Cheng Lee

Abstract: We investigate the vibrational properties of VO2, particularly the low temperature M1 phase by first-principles calculations using the density functional theory as well as Raman spectroscopy. We perform the structural optimization using SCAN meta-GGA functional and obtain the optimized crystal structures for metallic rutile and insulating M1 phases satisfying all expected features of the experimen… ▽ More We investigate the vibrational properties of VO2, particularly the low temperature M1 phase by first-principles calculations using the density functional theory as well as Raman spectroscopy. We perform the structural optimization using SCAN meta-GGA functional and obtain the optimized crystal structures for metallic rutile and insulating M1 phases satisfying all expected features of the experimentally derived structures. Based on the harmonic approximation around the optimized structures at zero temperature, we calculate the phonon properties and compare our results with experiments. We show that our calculated phonon density of states is in excellent agreement with the previous neutron scattering experiment. Moreover, we reproduce the phonon softening in the rutile phase as well as the phonon stiffening in the M1 phase. By comparing with the Raman experiments, we find that the Raman-active vibration modes of the M1 phase is strongly correlated with the V-V dimer distance of the crystal structure. Our combined theoretical and experimental framework demonstrates that Raman spectroscopy could serve as a reliable way to detect the subtle change of V-V dimer in the strained VO$_2$. △ Less

Submitted 19 August, 2020; originally announced August 2020.

Comments: 12 figures

Journal ref: Phys. Rev. B 103, 214107 (2021)

An Ising Hamiltonian Solver using Stochastic Phase-Transition Nano- Oscillators

Authors: Sourav Dutta, Abhishek Khanna, Adou S. Assoa, Hanjong Paik, Darrell Schlom, Zoltan Toroczkai, Arijit Raychowdhury, Suman Datta

Abstract: Computationally hard problems, including combinatorial optimization, can be mapped into the problem of finding the ground-state of an Ising Hamiltonian. Building physical systems with collective computational ability and distributed parallel processing capability can accelerate the ground-state search. Here, we present a continuous-time dynamical system (CTDS) approach where the ground-state solut… ▽ More Computationally hard problems, including combinatorial optimization, can be mapped into the problem of finding the ground-state of an Ising Hamiltonian. Building physical systems with collective computational ability and distributed parallel processing capability can accelerate the ground-state search. Here, we present a continuous-time dynamical system (CTDS) approach where the ground-state solution appears as stable points or attractor states of the CTDS. We harness the emergent dynamics of a network of phase-transition nano-oscillators (PTNO) to build an Ising Hamiltonian solver. The hardware fabric comprises of electrically coupled injection-locked stochastic PTNOs with bi-stable phases emulating artificial Ising spins. We demonstrate the ability of the stochastic PTNO-CTDS to progressively find more optimal solution by increasing the strength of the injection-locking signal - akin to performing classical annealing. We demonstrate in silico that the PTNO-CTDS prototype solves a benchmark non-deterministic polynomial time (NP)-hard Max-Cut problem with high probability of success. Using experimentally calibrated numerical simulations and incorporating non-idealities, we investigate the performance of our Ising Hamiltonian solver on dense Max-Cut problems with increasing graph size. We report a high energy-efficiency of 1.3x10^7 solutions/sec/Watt for 100-node dense Max-cut problems which translates to a 5x improvement over the recently demonstrated memristor-based Hopfield network and several orders of magnitude improvement over other candidates such as CPU and GPU, quantum annealer and photonic Ising solver approaches. Such an energy efficient hardware exhibiting high solution-throughput/Watt can find applications in industrial planning and manufacturing, defense and cyber-security, bioinformatics and drug discovery. △ Less

Submitted 28 February, 2021; v1 submitted 23 July, 2020; originally announced July 2020.

Comments: 23 pages, 6 figures, 1 table

Strain-stabilized superconductivity

Authors: Jacob P. Ruf, Hanjong Paik, Nathaniel J. Schreiber, Hari P. Nair, Ludi Miao, Jason K. Kawasaki, Jocienne N. Nelson, Brendan D. Faeth, Yonghun Lee, Berit H. Goodge, Betül Pamuk, Craig J. Fennie, Lena F. Kourkoutis, Darrell G. Schlom, Kyle M. Shen

Abstract: Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendip… ▽ More Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the first instance of the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO$_{2}$ thin films on (110)-oriented TiO$_{2}$ substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of $d$ orbitals. △ Less

Submitted 13 May, 2020; originally announced May 2020.

Comments: 30 pages, 20 figures (including supplemental information)

Journal ref: Nature Communications 12, 59 (2021)

Correlation induced emergent charge order in metallic vanadium dioxide

Authors: Christopher N. Singh, L. F. J Piper, Hanjong Paik, Darrell G. Schlom, Wei-Cheng Lee

Abstract: Recent progress in growth and characterization of thin-film VO$_2$ has shown its electronic properties can be significantly modulated by epitaxial matching. To throw new light on the concept of `Mott engineering', we develop a symmetry-consistent approach to treat structural distortions and electronic correlations in epitaxial VO$_2$ films under strain, and compare our design with direct experimen… ▽ More Recent progress in growth and characterization of thin-film VO$_2$ has shown its electronic properties can be significantly modulated by epitaxial matching. To throw new light on the concept of `Mott engineering', we develop a symmetry-consistent approach to treat structural distortions and electronic correlations in epitaxial VO$_2$ films under strain, and compare our design with direct experimental probes. We find strong evidence for the emergence of correlation-driven charge order deep in the metallic phase, and our results indicate that exotic phases of VO$_2$ can be controlled with epitaxial stabilization. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. B 105, 035150 (2022)

Control of polymorphism during epitaxial growth of hyperferroelectric candidate LiZnSb on GaSb (111)B

Authors: Dongxue Du, Patrick J. Strohbeen, Hanjong Paik, Chenyu Zhang, Konrad Genser, Karin M. Rabe, Paul M. Voyles, Darrell G. Schlom, Jason K. Kawasaki

Abstract: A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theoretical predictions suggest a new class of materials, termed hyperferroelectics, that should be robust against the depolarization field and enable ferroelectricity down to the monolayer limit. Here we demonstrate the epit… ▽ More A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theoretical predictions suggest a new class of materials, termed hyperferroelectics, that should be robust against the depolarization field and enable ferroelectricity down to the monolayer limit. Here we demonstrate the epitaxial growth of hexagonal LiZnSb, one of the hyperferroelectric candidate materials, by molecular-beam epitaxy on GaSb (111)B substrates. Due to the high volatility of all three atomic species, we find that LiZnSb can be grown in an adsorption-controlled window, using an excess zinc flux. Within this window, the desired polar hexagonal phase is stabilized with respect to a competing cubic polymorph, as revealed by X-ray diffraction and transmission electron microscopy measurements. First-principles calculations show that for moderate amounts of epitaxial strain and moderate concentrations of Li vacancies, the cubic LiZnSb phase is lower in formation energy than the hexagonal phase, but only by a few meV per formula unit. Therefore we suggest that kinetics plays a role in stabilizing the desired hexagonal phase at low temperatures. Our results provide a path towards experimentally demonstrating ferroelectricity and hyperferroelectricity in a new class of ternary intermetallic compounds. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Comments: The following article has been submitted to the Journal of Vacuum Science and Technology. After it is published, it will be found at https://avs.scitation.org/journal/jvb

Journal ref: Journal of Vacuum Science & Technology B 38, 022208 (2020)

Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr$_3$SnO

Authors: Yanjun Ma, Anthony Edgeton, Hanjong Paik, Brendan Faeth, Chris Parzyck, Betül Pamuk, Shun-Li Shang, Zi-Kui Liu, Kyle M. Shen, Darrell G. Schlom, Chang-Beom Eom

Abstract: Topological materials are derived from the interplay between symmetry and topology. Advances in topological band theories have led to the prediction that the antiperovskite oxide Sr$_3$SnO is a topological crystalline insulator, a new electronic phase of matter where the conductivity in its (001) crystallographic planes is protected by crystallographic point group symmetries. Realization of this m… ▽ More Topological materials are derived from the interplay between symmetry and topology. Advances in topological band theories have led to the prediction that the antiperovskite oxide Sr$_3$SnO is a topological crystalline insulator, a new electronic phase of matter where the conductivity in its (001) crystallographic planes is protected by crystallographic point group symmetries. Realization of this material, however, is challenging. Guided by thermodynamic calculations we design and implement a deposition approach to achieve the adsorption-controlled growth of epitaxial Sr$_3$SnO single-crystal films by molecular-beam epitaxy (MBE). In-situ transport and angle-resolved photoemission spectroscopy measurements reveal the metallic and non-trivial topological nature of the as-grown samples. Compared with conventional MBE, the synthesis route used results in superior sample quality and is readily adapted to other topological systems with antiperovskite structures. The successful realization of thin films of topological crystalline insulators opens opportunities to manipulate topological states by tuning symmetries via epitaxial strain and heterostructuring. △ Less

Submitted 31 December, 2019; originally announced December 2019.

Single crystal growth and characterization of Ba$_2$ScNbO$_6$ -- a novel substrate for BaSnO$_3$ films

Authors: C. Guguschev, D. Klimm, M. Brützam, T. M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V. J. Fratello, D. G. Schlom

Abstract: Large single crystals of the double-perovskite Ba$_2$ScNbO$_6$ were grown from the melt for the first time. With a lattice parameter at room temperature of 4.11672(1) Å, this cubic double-perovskite has an excellent lattice match to BaSnO$_3$, PbZr$_{0.9}$Ti$_{0.1}$O$_3$, LaInO$_3$, BiScO$_3$, and other perovskites of contemporary interest. Differential thermal analysis showed that Ba$_2$ScNbO… ▽ More Large single crystals of the double-perovskite Ba$_2$ScNbO$_6$ were grown from the melt for the first time. With a lattice parameter at room temperature of 4.11672(1) Å, this cubic double-perovskite has an excellent lattice match to BaSnO$_3$, PbZr$_{0.9}$Ti$_{0.1}$O$_3$, LaInO$_3$, BiScO$_3$, and other perovskites of contemporary interest. Differential thermal analysis showed that Ba$_2$ScNbO$_6$ melts at 2165$\pm$30°C in an inert atmosphere. Competitive grain growth was visualized by energy dispersive Laue map**. X-ray diffraction rocking curve measurements revealed full width at half maximum values between 21 and 33 arcsec for 002 and 004 reflections. The crystals were sufficiently large to yield (100)-oriented single-crystal substrates with surface areas as large as 10 x 10 mm$^2$. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Comments: 15 pages, 8 figures, 2 tables, submitted to J. Crystal Growth

Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3

Authors: Yongxi Ou, Zhe Wang, Celesta S. Chang, Hari P. Nair, Hanjong Paik, Neal Reynolds, D. C. Ralph, D. A. Muller, D. G. Schlom, R. A. Buhrman

Abstract: Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite S… ▽ More Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T) dependent spin Hall conductivity which becomes particularly high at low T, e.g. σ_{SH} \geqslant (\hbar/2e)3x10^{5} Ω^{-1}m^{-1} at 60 K. Below the SrRuO3 ferromagnetic transition, non-standard SOT components develop associated with the magnetic characteristics of the oxide, but these do not dominate as with spin currents from a conventional ferromagnet. Our results establish a new approach for the study of SOI in epitaxial conducting oxide heterostructures and confirm SrRuO3 as a promising candidate material for achieving new and enhanced spintronics functionalities. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 3 Figures

Journal ref: Nano Lett. 2019, 19, 6, 3663-3670

Cooperative Effects of Strain and Electron Correlation in Epitaxial VO2 and NbO2

Authors: Wei-Cheng Lee, Matthew J. Wahila, Shantanu Mukherjee, Christopher N. Singh, Tyler Eustance, Anna Regoutz, H. Paik, Jos E. Boschker, Fanny Rodolakis, Tien-Lin Lee, D. G. Schlom, Louis F. J. Piper

Abstract: We investigate the electronic structure of the epitaxial VO$_2$ films in the rutile phase using the density functional theory combined with the slave spin method (DFT+SS). In DFT-SS, the multiorbital Hubbard interactions are added to a DFT-fit tight-binding model, and we employ the slave-spin method to treat the electron correlation. We find that while stretching the system along the rutile $c$-ax… ▽ More We investigate the electronic structure of the epitaxial VO$_2$ films in the rutile phase using the density functional theory combined with the slave spin method (DFT+SS). In DFT-SS, the multiorbital Hubbard interactions are added to a DFT-fit tight-binding model, and we employ the slave-spin method to treat the electron correlation. We find that while stretching the system along the rutile $c$-axis results in a band structure favoring an anisotropic orbital fillings, the electron correlation favors an equal electron filling among $t_{2g}$ orbitals. These two distinct effects cooperatively induce interesting orbital-dependent redistributions of the electron occupations and the spectral weights, which pushes the strained VO$_2$ toward an orbital selective Mott transition (OSMT). The simulated single-particle spectral functions are directly compared to V L-edge resonant X-ray photoemission spectroscopy of epitaxial 10 nm VO$_2$/TiO$_2$ (001) and (100) strain orientations. Excellent agreement is observed between the simulations and experimental data regarding the strain-induced evolution of the lower Hubbard band. Simulations of rutile NbO$_2$ under similar strain conditions as VO$_2$ are performed, and we predict that OSMT will not occur in rutile NbO$_2$. Our results indicates that the electron correlation in VO$_2$ is important and can be modulated even in the rutile phase before the Peierls instability sets in. △ Less

Submitted 27 February, 2019; v1 submitted 21 August, 2018; originally announced August 2018.

Comments: 8 pages, 9 figures, invited paper for Special Topic: Strain Engineering in Functional Materials by Journal of Applied Physics

Journal ref: J. Appl. Phys. 125, 082539, (2019)

Engineering Dzyaloshinskii-Moriya interaction in B20 thin film chiral magnets

Authors: Emrah Turgut, Hanjong Paik, Kayla Nguyen, David A. Muller, Darrell G. Schlom, Gregory D. Fuchs

Abstract: Chiral magnetic Mn$_x$Fe$_{1-x}$Ge compounds have an antisymmetric exchange interaction that is tunable with the manganese stoichiometric fraction, $x$. Although millimeter-scale, polycrystalline bulk samples of this family of compounds have been produced, thin-film versions of these materials will be necessary for devices. In this study, we demonstrate the growth of epitaxial Mn$_x$Fe$_{1-x}$Ge t… ▽ More Chiral magnetic Mn$_x$Fe$_{1-x}$Ge compounds have an antisymmetric exchange interaction that is tunable with the manganese stoichiometric fraction, $x$. Although millimeter-scale, polycrystalline bulk samples of this family of compounds have been produced, thin-film versions of these materials will be necessary for devices. In this study, we demonstrate the growth of epitaxial Mn$_x$Fe$_{1-x}$Ge thin films on Si (111) substrates with a pure B20 crystal structure in the stoichiometric fraction range x from 0 to 0.81. Following systematic physical and magnetic characterization including microwave absorption spectroscopy, we quantify the antisymmetric exchange interaction and helical period as a function of $x$, which ranges from 200 nm to 8 nm. Our results demonstrate an approach to engineering the size of magnetic skyrmions in epitaxial films that are grown using scalable techniques. △ Less

Submitted 14 February, 2018; originally announced February 2018.

Comments: 21 pages including supporting materials, 9 figures total

Journal ref: Phys. Rev. Materials 2, 074404 (2018)

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Authors: Hanjong Paik, Zhen Chen, Edward Lochocki, Ariel H. Seidner, Amit Verma, Nicholas Tanen, Jisung Park, Masaki Uchida, ShunLi Shang, Bi-Cheng Zhou, Mario Brützam, Reinhard Uecker, Zi-Kui Liu, Debdeep Jena, Kyle M. Shen, David A. Muller, Darrell G. Schlom

Abstract: Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison… ▽ More Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects possibly (BaO)2 crystallographic shear defects or point defects significantly reduce the electron mobility. △ Less

Submitted 1 November, 2017; originally announced November 2017.

Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide

Authors: Will J. Hardy, Heng Ji, Hanjong Paik, Darrell G. Schlom, Douglas Natelson

Abstract: The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov-Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimens… ▽ More The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov-Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimensionalities. We report apparent WLMR and conductance fluctuations in H$_{x}$VO$_{2}$, a poor metal (in violation of the Mott-Ioffe-Regel limit) stabilized by the suppression of the VO$_{2}$ metal-insulator transition through atomic hydrogen do**. Epitaxial thin films, single-crystal nanobeams, and nanosheets show similar phenomenology, though the details of the apparent WLMR seem to depend on the combined effects of the strain environment and presumed do** level. Self-consistent quantitative analysis of the WLMR is challenging given this and the high resistivity of the material, since the quantitative expressions for WLMR are derived assuming good metallicity. These observations raise the issue of how to assess and analyze mesoscopic quantum effects in poor metals. △ Less

Submitted 17 April, 2017; originally announced April 2017.

Comments: 14 pages, 4 figures + 3 supplemental figures

Journal ref: J. Phys. Condens. Matt. 29, 185601 (2017)

Low-dam** sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

Authors: C. L. Jermain, H. Paik, S. V. Aradhya, R. A. Buhrman, D. G. Schlom, D. C. Ralph

Abstract: We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We… ▽ More We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective dam** coefficients of $11.1(9) \times 10^{-4}$ for 5.3 nm films and $32(3) \times 10^{-4}$ for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness. △ Less

Submitted 15 September, 2016; originally announced September 2016.

Comments: 14 pages, 4 figures

Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO$_2$

Authors: Shantanu Mukherjee, N. F. Quackenbush, H. Paik, C. Schlueter, T. -L. Lee, D. G. Schlom, L. F. J. Piper, Wei-Cheng Lee

Abstract: We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood b… ▽ More We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_α$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_α = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems. △ Less

Submitted 8 March, 2016; v1 submitted 1 March, 2016; originally announced March 2016.

Comments: 7 pages, 6 figures. First two authors contribute equally

Journal ref: Phys. Rev. B 93, 241110 (2016)

Epitaxial Growth of VO$_{2}$ by Periodic Annealing

Authors: J. W. Tashman, J. H. Lee, H. Paik, J. A. Moyer, R. Misra, J. A. Mundy, T. Spila, T. A. Merz, J. Schubert, D. A. Muller, P. Schiffer, D. G. Schlom

Abstract: We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 wa… ▽ More We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO$_{2}$ via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm. △ Less

Submitted 27 January, 2014; v1 submitted 18 October, 2013; originally announced October 2013.

Comments: 25 pages, 6 figures

Reaching 10 ms single photon lifetimes for superconducting aluminum cavities

Authors: M. Reagor, Hanhee Paik, G. Catelani, L. Sun, C. Axline, E. Holland, I. M. Pop, N. A. Masluk, T. Brecht, L. Frunzio, M. H. Devoret, L. I. Glazman, R. J. Schoelkopf

Abstract: Three-dimensional microwave cavities have recently been combined with superconducting qubits in the circuit quantum electrodynamics (cQED) architecture. These cavities should have less sensitivity to dielectric and conductor losses at surfaces and interfaces, which currently limit the performance of planar resonators. We expect that significantly (>10^3) higher quality factors and longer lifetimes… ▽ More Three-dimensional microwave cavities have recently been combined with superconducting qubits in the circuit quantum electrodynamics (cQED) architecture. These cavities should have less sensitivity to dielectric and conductor losses at surfaces and interfaces, which currently limit the performance of planar resonators. We expect that significantly (>10^3) higher quality factors and longer lifetimes should be achievable for 3D structures. Motivated by this principle, we have reached internal quality factors greater than 0.5x10^9 and intrinsic lifetimes of 0.01 seconds for multiple aluminum superconducting cavity resonators at single photon energies and millikelvin temperatures. These improvements could enable long lived quantum memories with submicrosecond access times when strongly coupled to superconducting qubits. △ Less

Submitted 22 May, 2013; v1 submitted 18 February, 2013; originally announced February 2013.

Comments: 4 pages, 2 figures

Journal ref: Appl. Phys. Lett. 102, 192604 (2013)

Observation of quantum state collapse and revival due to the single-photon Kerr effect

Authors: Gerhard Kirchmair, Brian Vlastakis, Zaki Leghtas, Simon E. Nigg, Hanhee Paik, Eran Ginossar, Mazyar Mirrahimi, Luigi Frunzio, S. M. Girvin, R. J. Schoelkopf

Abstract: Photons are ideal carriers for quantum information as they can have a long coherence time and can be transmitted over long distances. These properties are a consequence of their weak interactions within a nearly linear medium. To create and manipulate nonclassical states of light, however, one requires a strong, nonlinear interaction at the single photon level. One approach to generate suitable in… ▽ More Photons are ideal carriers for quantum information as they can have a long coherence time and can be transmitted over long distances. These properties are a consequence of their weak interactions within a nearly linear medium. To create and manipulate nonclassical states of light, however, one requires a strong, nonlinear interaction at the single photon level. One approach to generate suitable interactions is to couple photons to atoms, as in the strong coupling regime of cavity QED systems. In these systems, however, one only indirectly controls the quantum state of the light by manipulating the atoms. A direct photon-photon interaction occurs in so-called Kerr media, which typically induce only weak nonlinearity at the cost of significant loss. So far, it has not been possible to reach the single-photon Kerr regime, where the interaction strength between individual photons exceeds the loss rate. Here, using a 3D circuit QED architecture, we engineer an artificial Kerr medium which enters this regime and allows the observation of new quantum effects. We realize a Gedankenexperiment proposed by Yurke and Stoler, in which the collapse and revival of a coherent state can be observed. This time evolution is a consequence of the quantization of the light field in the cavity and the nonlinear interaction between individual photons. During this evolution non-classical superpositions of coherent states, i.e. multi-component Schroedinger cat states, are formed. We visualize this evolution by measuring the Husimi Q-function and confirm the non-classical properties of these transient states by Wigner tomography. The single-photon Kerr effect could be employed in QND measurement of photons, single photon generation, autonomous quantum feedback schemes and quantum logic operations. △ Less

Submitted 9 November, 2012; originally announced November 2012.

Comments: 6 pages, 4 figures, 5 pages supplementary Material, 3 figures

Journal ref: Nature 495, 205 (2013)

Photon Shot Noise Dephasing in the Strong-Dispersive Limit of Circuit QED

Authors: A. P. Sears, A. Petrenko, G. Catelani, L. Sun, Hanhee Paik, G. Kirchmair, L. Frunzio, L. I. Glazman, S. M. Girvin, R. J. Schoelkopf

Abstract: We study the photon shot noise dephasing of a superconducting transmon qubit in the strong-dispersive limit, due to the coupling of the qubit to its readout cavity. As each random arrival or departure of a photon is expected to completely dephase the qubit, we can control the rate at which the qubit experiences dephasing events by varying \textit{in situ} the cavity mode population and decay rate.… ▽ More We study the photon shot noise dephasing of a superconducting transmon qubit in the strong-dispersive limit, due to the coupling of the qubit to its readout cavity. As each random arrival or departure of a photon is expected to completely dephase the qubit, we can control the rate at which the qubit experiences dephasing events by varying \textit{in situ} the cavity mode population and decay rate. This allows us to verify a pure dephasing mechanism that matches theoretical predictions, and in fact explains the increased dephasing seen in recent transmon experiments as a function of cryostat temperature. We investigate photon dynamics in this limit and observe large increases in coherence times as the cavity is decoupled from the environment. Our experiments suggest that the intrinsic coherence of small Josephson junctions, when corrected with a single Hahn echo, is greater than several hundred microseconds. △ Less

Submitted 6 June, 2012; originally announced June 2012.

Comments: 5 pages, 4 figures; includes Supporting Online Material of 6 pages with 5 figures

Journal ref: Phys. Rev. B 86, 180504(R) (2012)

Black-box superconducting circuit quantization

Authors: Simon E. Nigg, Hanhee Paik, Brian Vlastakis, Gerhard Kirchmair, Shyam Shankar, Luigi Frunzio, Michel Devoret, Robert Schoelkopf, Steven Girvin

Abstract: We present a semi-classical method for determining the effective low-energy quantum Hamiltonian of weakly anharmonic superconducting circuits containing mesoscopic Josephson junctions coupled to electromagnetic environments made of an arbitrary combination of distributed and lumped elements. A convenient basis, capturing the multi-mode physics, is given by the quantized eigenmodes of the linearize… ▽ More We present a semi-classical method for determining the effective low-energy quantum Hamiltonian of weakly anharmonic superconducting circuits containing mesoscopic Josephson junctions coupled to electromagnetic environments made of an arbitrary combination of distributed and lumped elements. A convenient basis, capturing the multi-mode physics, is given by the quantized eigenmodes of the linearized circuit and is fully determined by a classical linear response function. The method is used to calculate numerically the low-energy spectrum of a 3D-transmon system, and quantitative agreement with measurements is found. △ Less

Submitted 2 April, 2012; originally announced April 2012.

Comments: 10 pages, 6 figures, includes supplementary material

Journal ref: Phys. Rev. Lett. 108, 240502 (2012)

Observation of high coherence in Josephson junction qubits measured in a three-dimensional circuit QED architecture

Authors: Hanhee Paik, D. I. Schuster, Lev S. Bishop, G. Kirchmair, G. Catelani, A. P. Sears, B. R. Johnson, M. J. Reagor, L. Frunzio, L. Glazman, S. M. Girvin, M. H. Devoret, R. J. Schoelkopf

Abstract: Superconducting quantum circuits based on Josephson junctions have made rapid progress in demonstrating quantum behavior and scalability. However, the future prospects ultimately depend upon the intrinsic coherence of Josephson junctions, and whether superconducting qubits can be adequately isolated from their environment. We introduce a new architecture for superconducting quantum circuits employ… ▽ More Superconducting quantum circuits based on Josephson junctions have made rapid progress in demonstrating quantum behavior and scalability. However, the future prospects ultimately depend upon the intrinsic coherence of Josephson junctions, and whether superconducting qubits can be adequately isolated from their environment. We introduce a new architecture for superconducting quantum circuits employing a three dimensional resonator that suppresses qubit decoherence while maintaining sufficient coupling to the control signal. With the new architecture, we demonstrate that Josephson junction qubits are highly coherent, with $T_2 \sim 10 μ$s to $20 μ$s without the use of spin echo, and highly stable, showing no evidence for $1/f$ critical current noise. These results suggest that the overall quality of Josephson junctions in these qubits will allow error rates of a few $10^{-4}$, approaching the error correction threshold. △ Less

Submitted 1 November, 2011; v1 submitted 23 May, 2011; originally announced May 2011.

Comments: 5 pages, 3 figures, 1 table. Accepted to Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 107, 240501 (2011)

Multi-level Spectroscopy of Two-Level Systems Coupled to a dc SQUID Phase Qubit

Authors: T. A. Palomaki, S. K. Dutta, R. M. Lewis, A. J. Przybysz, Hanhee Paik, B. K. Cooper, H. Kwon, J. R. Anderson, C. J. Lobb, E. Tiesinga, F. C. Wellstood

Abstract: We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite… ▽ More We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite system to an excited state of the qubit or an excited state of one of the TLS states, we fit the location and spectral width to get the energy levels, splitting sizes and spectroscopic coherence times of the phase qubit and TLSs. The distribution of splittings is consistent with non-interacting individual charged ions tunneling between random locations in the tunnel barrier and the distribution of lifetimes is consistent with the AlOx in the junction barrier having a frequency-independent loss tangent. To check that the charge of each TLS couples independently to the voltage across the junction, we also measured the spectrum in the 20-22 GHz range and found tilted avoided level crossings due to the second excited state of the junction and states in which both the junction and a TLS were excited. △ Less

Submitted 20 March, 2010; originally announced March 2010.

Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

Authors: Hanhee Paik, Kevin D. Osborn

Abstract: The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS) defect model. Each a-SiN$_{x}$:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent… ▽ More The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS) defect model. Each a-SiN$_{x}$:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent $\tanδ_{0}$ in a-SiN$_{x}$:H is strongly correlated with N-H impurities, including NH$_{2}$. By slightly reducing $x$ we are able to reduce $\tanδ_0$ by approximately a factor of 50, where the best films show $\tanδ_0$ $\simeq$ 3 $\times$ 10$^{-5}$. △ Less

Submitted 18 January, 2010; v1 submitted 20 August, 2009; originally announced August 2009.

Comments: 3 pages, 3 figures, 1 table. Accepted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 96 (2010) 072505

Multilevel effects in the Rabi oscillations of a Josephson phase qubit

Authors: S. K. Dutta, Frederick W. Strauch, R. M. Lewis, Kaushik Mitra, Hanhee Paik, T. A. Palomaki, Eite Tiesinga, J. R. Anderson, Alex J. Dragt, C. J. Lobb, F. C. Wellstood

Abstract: We present Rabi oscillation measurements of a Nb/AlOx/Nb dc superconducting quantum interference device (SQUID) phase qubit with a 100 um^2 area junction acquired over a range of microwave drive power and frequency detuning. Given the slightly anharmonic level structure of the device, several excited states play an important role in the qubit dynamics, particularly at high power. To investigate… ▽ More We present Rabi oscillation measurements of a Nb/AlOx/Nb dc superconducting quantum interference device (SQUID) phase qubit with a 100 um^2 area junction acquired over a range of microwave drive power and frequency detuning. Given the slightly anharmonic level structure of the device, several excited states play an important role in the qubit dynamics, particularly at high power. To investigate the effects of these levels, multiphoton Rabi oscillations were monitored by measuring the tunneling escape rate of the device to the voltage state, which is particularly sensitive to excited state population. We compare the observed oscillation frequencies with a simplified model constructed from the full phase qubit Hamiltonian and also compare time-dependent escape rate measurements with a more complete density-matrix simulation. Good quantitative agreement is found between the data and simulations, allowing us to identify a shift in resonance (analogous to the ac Stark effect), a suppression of the Rabi frequency, and leakage to the higher excited states. △ Less

Submitted 5 December, 2009; v1 submitted 28 June, 2008; originally announced June 2008.

Comments: 14 pages, 9 figures; minor corrections, updated references

Journal ref: Phys. Rev. B 78, 104510 (2008)

Decoherence in dc SQUID phase qubits

Authors: Hanhee Paik, S. K. Dutta, R. M. Lewis, T. A. Palomaki, B. K. Cooper, R. C. Ramos, H. Xu, A. J. Dragt, J. R. Anderson, C. J. Lobb, F. C. Wellstood

Abstract: We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit a s… ▽ More We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit a spectroscopic coherence time T2* varied from 3 to 7 ns and the decay envelope of Rabi oscillations had a time constant T' = 25 ns on average at 80 mK. The three Nb devices also showed T2* in the range of 4 to 6 ns, but T' was 9 to 15 ns, just about 1/2 the value we found in the Al device. For all the devices, the time constants were roughly independent of the isolation from the bias lines, implying that noise and dissipation from the bias leads were not the principal sources of dephasing and inhomogeneous broadening. △ Less

Submitted 28 April, 2008; originally announced April 2008.

Comments: 5 figures. Accepted to Physical Review B

Comparison of coherence times in three dc SQUID phase qubits

Authors: Hanhee Paik, B. K. Cooper, S. K. Dutta, R. M. Lewis, R. C. Ramos, T. A. Palomaki, A. J. Przybysz, A. J. Dragt, J. R. Anderson, C. J. Lobb, F. C. Wellstood

Abstract: We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times f… ▽ More We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times for the gradiometer varied from 4 ns to 8 ns, about the same as for the other devices (4 to 10 ns). The time constant for decay of Rabi oscillations was significantly longer in the single-turn Al device (20 to 30 ns) than either of the Nb devices (10 to 15 ns). These results imply that spatially uniform flux noise is not the main source of decoherence or inhomogenous broadening in these devices. △ Less

Submitted 31 May, 2007; v1 submitted 31 May, 2007; originally announced May 2007.

Comments: 4 pages, 5 figures, accepted for publication in IEEE Trans. Appl. Supercond

Strong-field effects in the Rabi oscillations of the superconducting phase qubit

Authors: F. W. Strauch, S. K. Dutta, Hanhee Paik, T. A. Palomaki, K. Mitra, B. K. Cooper, R. M. Lewis, J. R. Anderson, A. J. Dragt, C. J. Lobb, F. C. Wellstood

Abstract: Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-… ▽ More Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-photon Rabi frequency, and two-photon Rabi frequency are compared to measurements made on a dc SQUID phase qubit with Nb/AlOx/Nb tunnel junctions. Good agreement is found between theory and experiment. △ Less

Submitted 2 March, 2007; originally announced March 2007.

Comments: 4 pages, 4 figures, accepted for publication in IEEE Trans. Appl. Supercond

Fast High-Fidelity Measurements of the Ground and Excited States of a dc-SQUID Phase Qubit

Authors: T. A. Palomaki, S. K. Dutta, R. M. Lewis, Hanhee Paik, K. Mitra, B. K. Cooper, A. J. Przybysz, A. J. Dragt, J. R. Anderson, C. J. Lobb, F. C. Wellstood

Abstract: We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine a… ▽ More We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine average occupancy of the levels down to 0.01%, quantify small levels of leakage, and find the optimum pulse condition for single-shot measurements. Our best error rate is 3% with a measurement fidelity of 94%. By monitoring the escape rate during the pulse, the pulse current in the junction can be found to better than 10 nA on a 0.1 ns time scale. Theoretical analysis of the system reveals switching curves that are in good agreement with the data, as well as predictions that the ultimate single-shot error rate for this technique can reach 0.4% and the fidelity 99.2%. △ Less

Submitted 17 August, 2006; originally announced August 2006.

Spectroscopy of Three-Particle Entanglement in a Macroscopic Superconducting Circuit

Authors: Huizhong Xu, Frederick W. Strauch, Sudeep Dutta, Philip R. Johnson, R. C. Ramos, A. J. Berkley, H. Paik, J. R. Anderson, A. J. Dragt, C. J. Lobb, F. C. Wellstood

Abstract: We study the quantum mechanical behavior of a macroscopic, three-body, superconducting circuit. Microwave spectroscopy on our system, a resonator coupling two large Josephson junctions, produced complex energy spectra well explained by quantum theory over a large frequency range. By tuning each junction separately into resonance with the resonator, we first observe strong coupling between each j… ▽ More We study the quantum mechanical behavior of a macroscopic, three-body, superconducting circuit. Microwave spectroscopy on our system, a resonator coupling two large Josephson junctions, produced complex energy spectra well explained by quantum theory over a large frequency range. By tuning each junction separately into resonance with the resonator, we first observe strong coupling between each junction and the resonator. Bringing both junctions together into resonance with the resonator, we find spectroscopic evidence for entanglement between all three degrees of freedom and suggest a new method for controllable coupling of distant qubits, a key step toward quantum computation. △ Less

Submitted 12 August, 2005; v1 submitted 10 September, 2004; originally announced September 2004.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 94, 027003 (2005)

Two stage superconducting quantum interference device amplifier in a high-Q gravitational wave transducer

Authors: Gregory M. Harry, Insik **, Ho Jung Paik, Thomas R. Stevenson, Frederick C. Wellstood

Abstract: We report on the total noise from an inductive motion transducer for a gravitational-wave antenna. The transducer uses a two-stage SQUID amplifier and has a noise temperature of 1.1 mK, of which 0.70 mK is due to back-action noise from the SQUID chip. The total noise includes thermal noise from the transducer mass, which has a measured Q of 2.60 X 10^6. The noise temperature exceeds the expected… ▽ More We report on the total noise from an inductive motion transducer for a gravitational-wave antenna. The transducer uses a two-stage SQUID amplifier and has a noise temperature of 1.1 mK, of which 0.70 mK is due to back-action noise from the SQUID chip. The total noise includes thermal noise from the transducer mass, which has a measured Q of 2.60 X 10^6. The noise temperature exceeds the expected value of 3.5 μK by a factor of 200, primarily due to voltage noise at the input of the SQUID. Noise from flux trapped on the chip is found to be the most likely cause. △ Less

Submitted 26 January, 2000; v1 submitted 21 October, 1999; originally announced October 1999.

Comments: Accepted by Applied Physics Letters tentatively scheduled for March 13, 2000