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Tailoring Interlayer Chiral Exchange by Azimuthal Symmetry Engineering
Authors:
Yu-Hao Huang,
Jui-Hsu Han,
Wei-Bang Liao,
Chen-Yu Hu,
Yan-Ting Liu,
Chi-Feng Pai
Abstract:
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to contro…
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Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) has sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to control interlayer DMI's magnitude unaddressed. Here, we introduce an azimuthal symmetry engineering protocol capable of additive/subtractive tuning of interlayer DMI through the control of wedge deposition of separate layers, and demonstrate its capability to mediate field-free spin-orbit torque (SOT) magnetization switching in both orthogonally magnetized and synthetic antiferromagnetically coupled systems. Furthermore, we showcase the spatial inhomogeneity brought about by wedge depositon can be suppressed by specific azimuthal engineering design, ideal for practical implementation. Our findings provide guidelines for effective manipulations of interlayer DMI strength, beneficial for future design of SOT-MRAM or other spintronic devices utilizing interlayer DMI.
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Submitted 25 December, 2023; v1 submitted 22 December, 2023;
originally announced December 2023.
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Field-Free Switching in Symmetry Breaking Multilayers: The Critical Role of Interlayer Chiral Exchange
Authors:
Yung-Cheng Li,
Yu-Hao Huang,
Chao-Chung Huang,
Yan-Ting Liu,
Chi-Feng Pai
Abstract:
It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which employs the interlayer chiral exchange coupling or the interlayer Dzyaloshinskii-Moriya interaction (i-DMI) to achieve symmetry breaking. We hereby investigate the i…
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It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which employs the interlayer chiral exchange coupling or the interlayer Dzyaloshinskii-Moriya interaction (i-DMI) to achieve symmetry breaking. We hereby investigate the interlayer DMI in a Pt/Co multilayer system with orthogonally magnetized layers, using repeatedly stacked [Pt/Co]n structure with PMA, and a thick Co layer with in-plane magnetic anisotropy (IMA). We clarify the origin and the direction of such symmetry breaking with relation to the i-DMI effective field, and show a decreasing trend of the said effective field magnitude to the stacking number (n). By comparing the current-induced field-free switching behavior for both PMA and IMA layers, we confirm the dominating role of i-DMI in such field-free switching, excluding other possible mechanisms such as tilted-anisotropy and unconventional spin currents that may have arisen from the symmetry breaking.
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Submitted 12 September, 2023; v1 submitted 27 July, 2023;
originally announced July 2023.
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Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Authors:
Y. -T. Tsai,
C. -R. Liu,
Y. -T. Chen,
S. -M. Wang,
Z. -K. Chen,
C. -S. Pai,
Z. -R. Haung,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee,
Y. -T. Tang
Abstract:
In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain swi…
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In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain switching speed. However, no significant benefit was observed at electric fields less than 1 MV/cm. This is because at low voltage operation, the defective resistance (dead layer) within the interface prevents electron migration and the increased RC delay. Minimizing interface defects will be an important key to extending endurance and retention.
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Submitted 10 July, 2023;
originally announced July 2023.
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The Central Role of Tilted Anisotropy for Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization
Authors:
Chen-Yu Hu,
Wei-De Chen,
Yan-Ting Liu,
Chao-Chun Huang,
Chi-Feng Pai
Abstract:
The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with perpendicular magnetic anisotropy (PMA), the use of SOT is still hampered by the necessity of a longitudinal magnetic field to break the magnetic symmetry to achieve…
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The discovery of efficient magnetization switching activated by the spin Hall effect (SHE)-induced spin-orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for systems with perpendicular magnetic anisotropy (PMA), the use of SOT is still hampered by the necessity of a longitudinal magnetic field to break the magnetic symmetry to achieve deterministic switching. In this work, we first demonstrate that a robust and tunable field-free current-driven SOT switching of perpendicular magnetization can be controlled by the growth protocol in Pt-based magnetic heterostructures. It is further elucidated that such growth-dependent symmetry breaking is originated from the laterally tilted magnetic anisotropy of the ferromagnetic layer with PMA, which has been largely neglected in previous studies and its critical role should be re-focused. We show by both experiments and simulations that in a PMA system with tilted anisotropy, the deterministic field-free switching possesses a conventional SHE-induced dam**-like torque feature and the resulting current-induced effective field has a non-linear dependence on the applied current density, which could be potentially misattributed to an unconventional SOT origin.
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Submitted 10 June, 2023;
originally announced June 2023.
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Growth-dependent Interlayer Chiral Exchange and Field-free Switching
Authors:
Yu-Hao Huang,
Chao-Chung Huang,
Wei-Bang Liao,
Tian-Yue Chen,
Chi-Feng Pai
Abstract:
Interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions and other 2D antisymmetric spin textures confined within a single ferromagnetic layer, while more recent works on interlayer DMI reveal new pathways in realizing novel chiral 3D spin textures between two separate layers.Here,…
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Interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions and other 2D antisymmetric spin textures confined within a single ferromagnetic layer, while more recent works on interlayer DMI reveal new pathways in realizing novel chiral 3D spin textures between two separate layers.Here, we report on interlayer DMI between two orthogonally magnetized ferromagnetic layers (CoFeB/Co) mediated by a Pt layer, and confirm the chiral nature of the observed effective field of up to 37 Oe through asymmetric hysteresis loops under in-plane field.We highlight the importance of growth-induced in-plane symmetry breaking, resulting in a sizable interlayer DMI and a universal characteristic vector through wedge deposition of the samples.We further perform deterministic current-driven magnetization switching in the perpendicularly magnetized Co layer utilizing solely the effective field from the interlayer DMI.These results demonstrate the potential of interlayer DMI in facilitating deterministic field-free switching in spin memory applications.
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Submitted 8 August, 2022;
originally announced August 2022.
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Deep Learning for Spin-Orbit Torque Characterizations with a Projected Vector Field Magnet
Authors:
Chao-Chung Huang,
Chia-Chin Tsai,
Wei-Bang Liao,
Tian-Yue Chen,
Chi-Feng Pai
Abstract:
Spin-orbit torque characterizations on magnetic heterostructures with perpendicular anisotropy are demonstrated on a projected vector field magnet via hysteresis loop shift measurement and harmonic Hall measurement with planar Hall correction. Accurate magnetic field calibration of the vector magnet is realized with the help of deep learning models, which are able to capture the nonlinear behavior…
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Spin-orbit torque characterizations on magnetic heterostructures with perpendicular anisotropy are demonstrated on a projected vector field magnet via hysteresis loop shift measurement and harmonic Hall measurement with planar Hall correction. Accurate magnetic field calibration of the vector magnet is realized with the help of deep learning models, which are able to capture the nonlinear behavior between the generated magnetic field and the currents applied to the magnet. The trained models can successfully predict the applied current combinations under the circumstances of magnetic field scans, angle scans, and hysteresis loop shift measurements. The validity of the models is further verified, complemented by the comparison of the spin-orbit torque characterization results obtained from the deep-learning-trained vector magnet system with those obtained from a conventional setup comprised of two separated electromagnets. The dam**-like spin-orbit torque (DL-SOT) efficiencies (|$ξ_{DL}$|) extracted from the vector magnet and the traditional measurement configuration are consistent, where |$ξ_{DL}$| $\approx$ 0.22 for amorphous W and |$ξ_{DL}$| $\approx$ 0.02 for $α$-W. Our work provides an advanced method to meticulously control a vector magnet and to conveniently perform various spin-orbit torque characterizations.
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Submitted 29 June, 2022;
originally announced June 2022.
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Tailoring neuromorphic switching by CuNx-mediated orbital currents
Authors:
Tian-Yue Chen,
Yu-Chan Hsiao,
Wei-Bang Liao,
Chi-Feng Pai
Abstract:
Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular mo…
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Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular momentum (OAM)-induced orbital Hall effect (OHE) and/or the orbital Rashba-Edelstein effect (OREE) have been proposed to generate sizable torques comparable to those from the conventional spin Hall mechanism. In this work, we show that the orbital current can be effectively generated by the nitrided light metal Cu. The overall dam**-like SOT efficiency, which consists of both the spin and the orbital current contributions, can be tailored from ~ 0.06 to 0.4 in a Pt/Co/CuNx magnetic heterostructure by tuning the nitrogen do** concentration. Current-induced magnetization switching further verifies the efficacy of such orbital current with a critical switching current density as low as Jc ~ 5 x 10^10 A/m2. Most importantly, the orbital-current-mediated memristive switching behavior can be observed in such heterostructures, which reveals that the gigantic SOT and efficient magnetization switching are the tradeoffs for the applicable window of memristive switching. Our work provides insights into the role of orbital current might play in SOT neuromorphic devices and paves a new route for making energy-efficient spin-orbitronic devices.
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Submitted 30 May, 2022; v1 submitted 20 April, 2022;
originally announced April 2022.
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Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties
Authors:
M. X. Guo,
C. K. Cheng,
Y. C. Liu,
C. N. Wu,
W. N. Chen,
T. Y Chen,
C. T. Wu,
C. H. Hsu,
S. Q. Zhou,
C. F. Chang,
L. H. Tjeng,
S. F. Lee,
C. F. Pai,
M. Hong,
J. Kwo
Abstract:
Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, part…
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Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, particle-free surface with roughness as low as 0.1 nm as observed using atomic force microscopy. High-resolution x-ray diffraction analysis and reciprocal space maps showed in-plane epitaxial film growth, very smooth film/substrate interface, excellent film crystallinity with a small full width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an in-plane compressive strain without relaxation. In addition, spherical aberration-corrected scanning transmission electron microscopy showed an atomically abrupt interface between the EuIG film and GGG. The measured squarish out-of-plane magnetization-field hysteresis loops by vibrating sample magnetometry in conjunction with the measurements from angle-dependent x-ray magnetic dichroism demonstrated the PMA in the films. We have tailored the magnetic properties of the EuIG thin films, including saturation magnetization ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios), coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$) increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from -0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer structure and evaluated the real part of spin mixing conductance to be $3.48\times10^{14} Ω^{-1}m^{-2}$. We demonstrated the current-induced magnetization switching with a low critical switching current density of $3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation spintronic devices.
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Submitted 11 January, 2022;
originally announced January 2022.
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Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys
Authors:
Chen-Yu Hu,
Yu-Fang Chiu,
Chia-Chin Tsai,
Chao-Chung Huang,
Kuan-Hao Chen,
Cheng-Wei Peng,
Chien-Min Lee,
Ming-Yuan Song,
Yen-Lin Huang,
Shy-Jay Lin,
Chi-Feng Pai
Abstract:
5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the dam**-like SOT efficiencies ($ξ_{DL}$) of Pt and Pt alloys have still been limited to $ξ_{DL}$<0.5. Here we present that with proper alloying elements, particularly 3d…
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5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the dam**-like SOT efficiencies ($ξ_{DL}$) of Pt and Pt alloys have still been limited to $ξ_{DL}$<0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ($σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt$_{0.69}$Cr$_{0.31}$/Co device can be achieved with a moderate Pt$_{0.69}$Cr$_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$. A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The dam** constant ($α$) of Pt$_{0.69}$Cr$_{0.31}$/FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$, giant $ξ_{DL}$, moderate $ρ_{xx}$, and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.
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Submitted 8 April, 2022; v1 submitted 31 August, 2021;
originally announced August 2021.
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Anatomy of Type-X Spin-Orbit Torque Switching
Authors:
Yan-Ting Liu,
Chao-Chung Huang,
Kuan-Hao Chen,
Yu-Hao Huang,
Chia-Chin Tsai,
Ting-Yu Chang,
Chi-Feng Pai
Abstract:
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and better-performance SOT magnetoresistive random access memory (SOT-MRAM) as compared to the conventional type-y design. Here, we systematically investigate type-x…
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Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and better-performance SOT magnetoresistive random access memory (SOT-MRAM) as compared to the conventional type-y design. Here, we systematically investigate type-x SOT switching properties by both macrospin and micromagnetic simulations. The out-of-plane external field and anisotropy field dependence of the switching current density ($J_{sw}$) is first examined in the ideal type-x configuration. Next, we study the FM layer canting angle ($φ_{EA}$) dependence of $J_{sw}$ through macrospin simulations and experiments, which show a transformation of switching dynamics from type-x to type-y with increasing $φ_{EA}$. By further integrating field-like torque (FLT) into the simulated system, we find that a positive FLT can assist type-x SOT switching while a negative one brings about complex dynamics. More crucially, with the existence of a sizable FLT, type-x switching mode results in a lower critical switching current than type-y at current pulse width less than ~ 10 ns, indicating the advantage of employing type-x design for ultrafast switching using materials systems with FLT. Our work provides a thorough examination of type-x SOT scheme with various device/materials parameters, which can be informative for designing next-generation SOT-MRAM.
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Submitted 2 August, 2021;
originally announced August 2021.
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Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime
Authors:
Ting-Yu Chang,
Chih-Lin Cheng,
Chao-Chung Huang,
Cheng-Wei Peng,
Yu-Hao Huang,
Tian-Yue Chen,
Yan-Ting Liu,
Chi-Feng Pai
Abstract:
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are identified: A spin-dependent-scattering mechanism regime at small current densities $J \sim$ $10$$^{9}$A/m$^{2}$ (UMR ratio $\propto$ $J$), a spin-magnon-interaction m…
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A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are identified: A spin-dependent-scattering mechanism regime at small current densities $J \sim$ $10$$^{9}$A/m$^{2}$ (UMR ratio $\propto$ $J$), a spin-magnon-interaction mechanism regime at intermediate $J \sim$ $10$$^{10}$A/m$^{2}$ (UMR ratio $\propto$ $J$$^{3}$), and a spin-transfer torque (STT) regime at $J \sim$ $10$$^{11}$A/m$^{2}$ (UMR ratio independent of $J$). We verify the direct correlation between this large UMR and the transfer of spin angular momentum from the W layer to the CoFeB layer by both field-dependent and current-dependent UMR characterizations. Numerical simulations further confirm that the large STT-UMR stems from the tilting of the magnetization affected by the spin Hall effect-induced spin-transfer torques. An alternative approach to estimate dam**-like spin-torque efficiencies from magnetic heterostructures is also proposed.
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Submitted 16 July, 2021;
originally announced July 2021.
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Spin-orbit torque characterization in a nutshell
Authors:
Minh-Hai Nguyen,
Chi-Feng Pai
Abstract:
Spin current and spin torque generation through the spin-orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research. The realization of spin-orbit torque (SOT) driven magnetic dynamics and switching in diverse magnetic heterostructures also pave the way for develo** SOT magnetoresistive random access memory and other novel SOT memory and logic devices. O…
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Spin current and spin torque generation through the spin-orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research. The realization of spin-orbit torque (SOT) driven magnetic dynamics and switching in diverse magnetic heterostructures also pave the way for develo** SOT magnetoresistive random access memory and other novel SOT memory and logic devices. Of scientific and technological importance are accurate and efficient SOT quantification techniques, which have been abundantly developed in the last decade. In this article, we summarize popular techniques to experimentally quantify SOTs in magnetic heterostructures at micro- and nano-scale. For each technique, we give an overview of its principle, variations, strengths, shortcomings, error sources, and any cautions in usage. Finally, we discuss the remaining challenges in understanding and quantifying the SOTs in heterostructures.
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Submitted 19 March, 2021;
originally announced March 2021.
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Efficient Spin-Orbit Torque Generation in Semiconducting WTe2 with Hop** Transport
Authors:
Cheng-Wei Peng,
Wei-Bang Liao,
Tian-Yue Chen,
Chi-Feng Pai
Abstract:
Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here we show that amorphous WTe2 heterostructures de…
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Spin-orbit torques (SOTs) from transition metal dichalcogenides systems (TMDs) in conjunction with ferromagnetic materials are recently attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here we show that amorphous WTe2 heterostructures deposited by magnetron sputtering possess a sizable dam**-like SOT efficiency ξ_DL^WTe2 ~ 0.20 and low dam** constant α = 0.009/pm0.001. Only an extremely low critical switching current density J_c ~ 7.05\times10^9 A/m^2 is required to achieve SOT-driven magnetization switching. The SOT efficiency is further proved to depend on the W and Te relative compositions in the co-sputtered W_100-xTe_x samples, from which a sign change of ξ_DL^WTe2 is observed. Besides, the electronic transport in amorphous WTe2 is found to be semiconducting and is governed by a hop** mechanism. With the above advantages and rich tunability, amorphous and semiconducting WTe2 serves as a unique SOT source for future spintronics applications.
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Submitted 15 January, 2021;
originally announced January 2021.
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Pulse-width and Temperature Dependence of Memristive Spin-Orbit Torque Switching
Authors:
Wei-Bang Liao,
Tian-Yue Chen,
Yu-Chan Hsiao,
Chi-Feng Pai
Abstract:
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices. However, most previous studies on various types of magnetic heterostructures have focused on only their SOT efficiencies, whereas the thermal stabilities therei…
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It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices. However, most previous studies on various types of magnetic heterostructures have focused on only their SOT efficiencies, whereas the thermal stabilities therein have been largely ignored. In this work, we study the temperature-dependent SOT and stability properties of two types of W-based heterostructures, namely W/CoFeB/MgO (standard) and CoFeB/W/CoFeB/MgO (field-free), from 25 ^{\circ}C (298 K) to 80 ^{\circ}C (353 K). Via temperature-dependent SOT characterization, the SOT efficacies for both systems are found to be invariant within the range of studied temperatures. Temperature-dependent current-induced SOT switching measurements further show that the critical switching current densities decrease with respect to the ambient temperature; thermal stability factors (Δ) are also found to degrade as temperature increases for both standard and field-free systems. The memristive SOT switching behaviors in both systems with various pulse-widths and temperatures are also examined. Our results suggest that although the SOT efficacy is robust against thermal effects, the reduction of Δ at elevated temperatures could be detrimental to standard memory as well as neuromorphic (memristive) device applications.
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Submitted 10 December, 2020;
originally announced December 2020.
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Benchmarking of spin-orbit torque switching efficiency in Pt alloys
Authors:
Chen-Yu Hu,
Chi-Feng Pai
Abstract:
We systematically survey on Pt$_{x}$Cu$_{1-x}$/Co/MgO magnetic heterostructure with perpendicular magnetic anisotropy and report a significant improvement on spin-orbit torque switching efficiency in Pt-Cu alloy system. The largest dam**-like spin-orbit torque efficiency determined by hysteresis loop shift measurement is about 0.44 for Pt$_{0.57}$Cu$_{0.43}$, which is originated from the higher…
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We systematically survey on Pt$_{x}$Cu$_{1-x}$/Co/MgO magnetic heterostructure with perpendicular magnetic anisotropy and report a significant improvement on spin-orbit torque switching efficiency in Pt-Cu alloy system. The largest dam**-like spin-orbit torque efficiency determined by hysteresis loop shift measurement is about 0.44 for Pt$_{0.57}$Cu$_{0.43}$, which is originated from the higher resistivity tuned by alloying. Moreover, from the results of current-induced switching measurements, a lower critical switching current density is achieved by proper alloying due to the simultaneous enhancement of spin-orbit torque efficiency and reduction of coercivity of the Co layer. Finally, the ability to lower power consumption and preserve good thermal stability using Pt$_{x}$Cu$_{1-x}$ alloy is demonstrated, which suggests that Pt$_{x}$Cu$_{1-x}$ is an attractive candidate for future SOT-MRAM applications.
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Submitted 19 May, 2020; v1 submitted 8 April, 2020;
originally announced April 2020.
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Determination of spin-orbit torque efficiencies in heterostructures with in-plane magnetic anisotropy
Authors:
Yan-Ting Liu,
Tian-Yue Chen,
Tzu-Hsiang Lo,
Tsung-Yu Tsai,
Shan-Yi Yang,
Yao-Jen Chang,
Jeng-Hua Wei,
Chi-Feng Pai
Abstract:
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic t…
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It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Hall effective fields and unidirectional magnetoresistance that will modify their anisotropic magnetoresistance behavior. We also demonstrate that by analyzing the response of anisotropic magnetoresistance under such influences, one can directly and electrically probe magnetization switching driven by the spin-orbit torque, even in micron-sized devices. This pump-probe method allows for efficient and direct determination of key parameters from spin-orbit torque switching events without lengthy device fabrication processes.
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Submitted 20 February, 2020;
originally announced February 2020.
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Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
Authors:
Tian-Yue Chen,
Cheng-Wei Peng,
Tsung-Yu Tsai,
Wei-Bang Liao,
Chun-Te Wu,
Hung-Wei Yen,
Chi-Feng Pai
Abstract:
The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of…
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The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the dam**-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi$_{x}$Te$_{1-x}$-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.
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Submitted 28 January, 2020; v1 submitted 2 November, 2019;
originally announced November 2019.
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Field-free spin-orbit torque switching through domain wall motion
Authors:
Neil Murray,
Wei-Bang Liao,
Ting-Chien Wang,
Liang-Juan Chang,
Li-Zai Tsai,
Tsung-Yu Tsai,
Shang-Fan Lee,
Chi-Feng Pai
Abstract:
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the…
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Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the conventional W/CoFeB/MgO SOT heterostructure, deterministic SOT switching of the perpendicularly-magnetized top CoFeB layer can be realized without the need of in-plane bias field. Kerr imaging study further unveils that the observed switching is mainly dominated by domain nucleation and domain wall motion, which might limit the potentiality of using this type of multilayer stack design for nanoscale SOT-MRAM application. Comparison of the experimental switching behavior with micromagnetic simulations reveals that the deterministic switching in our devices cannot be explained by the stray field contribution of the in-plane magnetized layer, and the roughness-caused Néel coupling effect might play a more important role in achieving the observed field-free deterministic switching.
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Submitted 20 September, 2019;
originally announced September 2019.
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Current-Induced magnetization switching by the high spin Hall conductivity $α$-W
Authors:
Wei-Bang Liao,
Tian-Yue Chen,
Yari Ferrante,
Stuart S. P. Parkin,
Chi-Feng Pai
Abstract:
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to conventional spin-transfer torque for controlling next-generation magnetic memories. Among all 5d transition metals, W in its resistive amorphous phase typically show…
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The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to conventional spin-transfer torque for controlling next-generation magnetic memories. Among all 5d transition metals, W in its resistive amorphous phase typically shows the largest spin-orbit torque efficiency ~ 0.20-0.50. In contrast, its conductive and crystalline $α$ phase possesses a significantly smaller efficiency ~ 0.03 and no spin-orbit torque switching has yet been realized using $α$-W thin films as the spin Hall source. In this work, through a comprehensive study of high quality W/CoFeB/MgO and the reversed MgO/CoFeB/W magnetic heterostructures, we show that although amorphous-W has a greater spin-orbit torque efficiency, the spin Hall conductivity of $α$-W ($|σ_{\operatorname{SH}}^{α\operatorname{-W}}|=3.71\times10^{5}\operatornameΩ^{-1}\operatorname{m}^{-1}$) is ~3.5 times larger than that of amorphous-W ($|σ_{\operatorname{SH}}^{\operatorname{amorphous-W}}|=1.05\times10^{5}\operatornameΩ^{-1}\operatorname{m}^{-1}$). Moreover, we demonstrate spin-orbit torque driven magnetization switching using a MgO/CoFeB/$α$-W heterostructure. Our findings suggest that the conductive and high spin Hall conductivity $α$-W can be a potential candidate for future low power consumption spin-orbit torque memory applications.
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Submitted 14 July, 2019;
originally announced July 2019.
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Spin-orbit torques acting upon a perpendicularly-magnetized Py layer
Authors:
Tian-Yue Chen,
Yongxi Ou,
Tsung-Yu Tsai,
Robert A. Buhrman,
Chi-Feng Pai
Abstract:
We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO cap** layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dam**like spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/…
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We show that Py, a commonly-used soft ferromagnetic material with weak anisotropy, can become perpendicularly-magnetized while depositing on Ta buffer layer with Hf or Zr insertion layers (ILs) and MgO cap** layer. By using two different approaches, namely harmonic voltage measurement and hysteresis loop shift measurement, the dam**like spin-orbit torque (DL-SOT) efficiencies from Ta/IL/Py/IL/MgO magnetic heterostructures with perpendicular magnetic anisotropy are characterized. We find that though Ta has a significant spin Hall effect, the DL-SOT efficiencies are small in systems with the Ta/Py interface compared to that obtained from the control sample with the traditional Ta/CoFeB interface. Our results indicate that the spin transparency for the Ta/Py interface is much less than that for the Ta/CoFeB interface, which might be related to the variation of spin mixing conductance for different interfaces.
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Submitted 13 November, 2018;
originally announced November 2018.
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The current-induced spin-orbit torque and field-free switching from Mo-based magnetic heterostructures
Authors:
Tian-Yue Chen,
Hsin-I Chan,
Wei-Bang Liao,
Chi-Feng Pai
Abstract:
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dam**like spin-orbit torque (SOT) efficiency of Mo/CoFeB/MgO heterostructure is $ξ_{DL}\approx -0.003\pm 0.001$ and fairly independent of the annealing temperature from 300$^\circ$C to 400$^\circ$C. Though…
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Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dam**like spin-orbit torque (SOT) efficiency of Mo/CoFeB/MgO heterostructure is $ξ_{DL}\approx -0.003\pm 0.001$ and fairly independent of the annealing temperature from 300$^\circ$C to 400$^\circ$C. Though $|ξ_{DL}|$ is small while compare to those from Ta or W-based heterostructures, reversible current-induced SOT switching of a thermally-stable Mo/CoFeB/MgO heterostruture can still be achieved. Furthermore, we observe field-free current-induced switching from a Mo/CoFeB/MgO structure with the Mo layer being wedge-deposited. Our results indicate that even for a weak spin-orbit interaction 4d transition metal such as Mo, it is still possible to generate sufficient spin current for conventional SOT switching and to realize field-free current-induced switching by structural engineering.
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Submitted 24 August, 2018; v1 submitted 31 May, 2018;
originally announced May 2018.
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Spin-orbit torque magnetometry by wide-field magneto-optical Kerr effect
Authors:
Tsung-Yu Tsai,
Tian-Yue Chen,
Chun-Ting Wu,
Hsin-I Chan,
Chi-Feng Pai
Abstract:
Magneto-optical Kerr effect (MOKE) is an efficient approach to probe surface magnetization in thin film samples. Here we present a wide-field MOKE technique that adopts a K$ö$hler illumination scheme to characterize the current-induced dam**-like spin-orbit torque (DL-SOT) in micronsized and unpatterned magnetic heterostructures with perpendicular magnetic anisotropy. Through a current-induced h…
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Magneto-optical Kerr effect (MOKE) is an efficient approach to probe surface magnetization in thin film samples. Here we present a wide-field MOKE technique that adopts a K$ö$hler illumination scheme to characterize the current-induced dam**-like spin-orbit torque (DL-SOT) in micronsized and unpatterned magnetic heterostructures with perpendicular magnetic anisotropy. Through a current-induced hysteresis loop shift analysis, we quantify the DL-SOT efficiency of a Ta-based heterostructure with bar-shaped geometry, Hall-cross geometry, and unpatterned geometry to be $|ξ_{DL}|\approx$ 0.08. The proposed wide-field MOKE approach therefore provides an instant and direct characterization of DL-SOT, without the need of any further interpretation on electrical signals.
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Submitted 24 March, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
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A Comparative Study on Spin-Orbit Torque Efficiencies from W/ferromagnetic and W/ferrimagnetic Heterostructures
Authors:
Ting-Chien Wang,
Tian-Yue Chen,
Chun-Te Wu,
Hung-Wei Yen,
Chi-Feng Pai
Abstract:
It has been shown that W in its resistive form possesses the largest spin-Hall ratio among all heavy transition metals, which makes it a good candidate for generating efficient dam**like spin-orbit torque (DL-SOT) acting upon adjacent ferromagnetic or ferrimagnetic (FM) layer. Here we provide a systematic study on the spin transport properties of W/FM magnetic heterostructures with the FM layer…
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It has been shown that W in its resistive form possesses the largest spin-Hall ratio among all heavy transition metals, which makes it a good candidate for generating efficient dam**like spin-orbit torque (DL-SOT) acting upon adjacent ferromagnetic or ferrimagnetic (FM) layer. Here we provide a systematic study on the spin transport properties of W/FM magnetic heterostructures with the FM layer being ferromagnetic Co$_{20}$Fe$_{60}$B$_{20}$ or ferrimagnetic Co$_{63}$Tb$_{37}$ with perpendicular magnetic anisotropy. The DL-SOT efficiency $|ξ_{DL}|$, which is characterized by a current-induced hysteresis loop shift method, is found to be correlated to the microstructure of W buffer layer in both W/Co$_{20}$Fe$_{60}$B$_{20}$ and W/Co$_{63}$Tb$_{37}$ systems. Maximum values of $|ξ_{DL}|\approx 0.144$ and $|ξ_{DL}|\approx 0.116$ are achieved when the W layer is partially amorphous in the W/Co$_{20}$Fe$_{60}$B$_{20}$ and W/Co$_{63}$Tb$_{37}$ heterostructures, respectively. Our results suggest that the spin Hall effect from resistive phase of W can be utilized to effectively control both ferromagnetic and ferrimagnetic layers through a DL-SOT mechanism.
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Submitted 9 December, 2017; v1 submitted 2 November, 2017;
originally announced November 2017.
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Tunable Spin-Orbit Torques in Cu-Ta Binary Alloy Heterostructures
Authors:
Tian-Yue Chen,
Chun-Te Wu,
Hung-Wei Yen,
Chi-Feng Pai
Abstract:
The spin Hall effect (SHE) is found to be strong in heavy transition metals (HM), such as Ta and W, in their amorphous and/or high resistivity form. In this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an amorphous Cu$_{100-x}$Ta$_{x}$-based magnetic heterostructure with perpendicular magnetic anisotropy (PMA), the SHE-induced dam**-like spin-orbit torque (DL-SOT) effi…
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The spin Hall effect (SHE) is found to be strong in heavy transition metals (HM), such as Ta and W, in their amorphous and/or high resistivity form. In this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an amorphous Cu$_{100-x}$Ta$_{x}$-based magnetic heterostructure with perpendicular magnetic anisotropy (PMA), the SHE-induced dam**-like spin-orbit torque (DL-SOT) efficiency $|ξ_{DL}|$ can be linearly tuned by adjusting the buffer layer resistivity. Current-induced SOT switching can also be achieved in these Cu$_{100-x}$Ta$_{x}$-based magnetic heterostructures, and we find the switching behavior better explained by a SOT-assisted domain wall propagation picture. Through systematic studies on Cu$_{100-x}$Ta$_{x}$-based samples with various compositions, we determine the lower bound of spin Hall conductivity $|σ_{SH}|\approx2.02\times10^{4}[\hbar/2e]Ω^{-1}\cdot\operatorname{m}^{-1}$ in the Ta-rich regime. Based on the idea of resistivity tuning, we further demonstrate that $|ξ_{DL}|$ can be enhanced from 0.087 for pure Ta to 0.152 by employing a resistive TaN buffer layer.
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Submitted 3 August, 2017;
originally announced August 2017.
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The Spin-Orbit Torque from a Magnetic Heterostructure with High-Entropy Alloy
Authors:
Tian-Yue Chen,
Tsao-Chi Chuang,
Ssu-Yen Huang,
Hung-Wei Yen,
Chi-Feng Pai
Abstract:
High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this work, we demonstrate current-induced spin-orbit torque (SOT) magnetization switching in a Ta-Nb-Hf-Zr-Ti HEA-based magnetic heterostructure with perpendicular m…
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High-entropy alloy (HEA) is a family of metallic materials with nearly equal partitions of five or more metals, which might possess mechanical and transport properties that are different from conventional binary or tertiary alloys. In this work, we demonstrate current-induced spin-orbit torque (SOT) magnetization switching in a Ta-Nb-Hf-Zr-Ti HEA-based magnetic heterostructure with perpendicular magnetic anisotropy (PMA). The maximum dam**-like SOT efficiency from this particular HEA-based magnetic heterostructure is further determined to be $|ζ^{\operatorname{HEA}}_{DL}|\approx0.033$ by hysteresis loop shift measurements, while that for the Ta control sample is $|ζ^{\operatorname{Ta}}_{DL}|\approx0.04$. Our results indicate that HEA-based magnetic heterostructures can serve as a new group of potential candidates for SOT device applications.
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Submitted 19 May, 2017;
originally announced May 2017.
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On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures
Authors:
Yongxi Ou,
Chi-Feng Pai,
Shengjie Shi,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer suffici…
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We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/Oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.
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Submitted 15 August, 2016;
originally announced August 2016.
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Determination of the Spin-Hall-Effect-Induced and the Wedged-Structure-Induced Spin Torque Efficiencies in Heterostructures with Perpendicular Magnetic Anisotropy
Authors:
Chi-Feng Pai,
Maxwell Mann,
Aik Jun Tan,
Geoffrey S. D. Beach
Abstract:
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $χ_{SHE}$, can be estimated for Pt and Ta-based magnetic heterostructures with perpendicular magnetic anisotropy (PMA). We apply this technique to a Pt-based sample with its ferromagnetic (FM) laye…
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We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $χ_{SHE}$, can be estimated for Pt and Ta-based magnetic heterostructures with perpendicular magnetic anisotropy (PMA). We apply this technique to a Pt-based sample with its ferromagnetic (FM) layer being wedged-deposited and discover an extra effective field contribution, $χ_{Wedged}$, due to the asymmetric nature of the deposited FM layer. We confirm the correlation between $χ_{Wedged}$ and the asymmetric depinning process in FM layer during magnetization switching by magneto-optical Kerr (MOKE) microscopy. These results indicate the possibility of engineering deterministic spin-orbit torque (SOT) switching by controlling the symmetry of domain expansion through the materials growth process.
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Submitted 21 January, 2016;
originally announced January 2016.
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Current Control of Magnetic Anisotropy via Stress in a Ferromagnetic Metal Waveguide
Authors:
Kyongmo An,
Xin Ma,
Chi-Feng Pai,
Jusang Yang,
Kevin S. Olsson,
James L. Erskine,
Daniel C. Ralph,
Robert A. Buhrman,
Xiaoqin Li
Abstract:
We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic ani…
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We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic anisotropy field H_k, which changes symmetrically with respect to the current direction. Numerical simulation suggests that the anisotropic stress introduced by Joule heating plays an important role in controlling H_k. These results provide new insights into current manipulation of magnetic properties and have broad implications for spintronic devices.
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Submitted 8 January, 2016;
originally announced January 2016.
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Laser Transmission Studies with Magnetic Nanofluids
Authors:
Chintamani Pai,
H. Muthurajan,
Nooris Momin,
Radha Srinivasan,
R. Nagarajan
Abstract:
Transmission of He-Ne (632 nm, 10 mW) Gaussian laser beam through Hexane and Water based magnetic nanofluids containing Fe3O4 nanoparticles show strong non-linear and magneto-optical effects. Application of external magnetic field (up to 1.7 Wb/m2) perpendicular to the incident laser beam produces a change in forward scattered pattern of the incident laser beam. Dependence of forward scattered pat…
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Transmission of He-Ne (632 nm, 10 mW) Gaussian laser beam through Hexane and Water based magnetic nanofluids containing Fe3O4 nanoparticles show strong non-linear and magneto-optical effects. Application of external magnetic field (up to 1.7 Wb/m2) perpendicular to the incident laser beam produces a change in forward scattered pattern of the incident laser beam. Dependence of forward scattered patterns in presence of external magnetic field has been studied. Image processing has been carried out to understand spatial distribution of the forward scattered patterns and temporal evolution of patterns involving particle image velocimetry technique. Change in non-linear refractive index is estimated for samples showing self-diffraction arising from higher order non-linear optical effect. Observed effects are useful for understanding light scattering from magnetic nanofluids and develo** optofluidic devices and sensors.
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Submitted 14 September, 2015;
originally announced September 2015.
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Enhancement of the Anti-Dam** Spin Torque Efficacy of Platinum by Interface Modification
Authors:
Minh-Hai Nguyen,
Chi-Feng Pai,
Kayla X. Nguyen,
David A. Muller,
Daniel C. Ralph,
Robert A. Buhrman
Abstract:
We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-dam** spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer i…
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We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-dam** spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pum** through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet\' s absorption of the SHE generated spin current.
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Submitted 10 April, 2015;
originally announced April 2015.
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Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces
Authors:
Chi-Feng Pai,
Yongxi Ou,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a dam**-like spin torque on the FM range…
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We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a dam**-like spin torque on the FM ranges from < 0.05 to > 0.10 under different interfacial conditions. We also show that the temperature dependence of the spin torque efficiencies for both the dam**-like torque and field-like torque is dependent upon the details of the Pt-FM interface. The "internal" spin Hall angle of the Pt thin films used in this study, after taking the interfacial spin transmission factor into account, is estimated to be ~ 0.20. This suggests that a careful engineering of Pt-FM interfaces can improve the spin-Hall-torque efficiency of Pt-based spintronic devices.
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Submitted 12 November, 2014;
originally announced November 2014.
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Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer
Authors:
Chi-Feng Pai,
Minh-Hai Nguyen,
Carina Belvin,
Luis Henrique Vilela-Leão,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven…
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We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidam**-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.
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Submitted 18 January, 2014;
originally announced January 2014.
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Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect
Authors:
O. J. Lee,
L. Q. Liu,
C. F. Pai,
H. W. Tseng,
Y. Li,
D. C. Ralph,
R. A. Buhrman
Abstract:
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane…
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We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane applied magnetic field collinear with the current is required, with the necessary field scale set by the need to overcome DW chirality imposed by the Dzyaloshinskii-Moriya interaction. Once Joule heating is taken into account the switching current density is quantitatively consistent with a spin Hall angle θ$_{SH}$ ${\approx}$ 0.07 for 4 nm of Pt.
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Submitted 27 December, 2013;
originally announced December 2013.
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Control of Propagating Spin Waves via Spin Transfer Torque in a Metallic Bilayer Waveguide
Authors:
Kyongmo An,
Daniel R. Birt,
Chi-Feng Pai,
Kevin Olsson,
Daniel C. Ralph,
Robert. A. Buhrman,
Xiaoqin Li
Abstract:
We investigate the effect of a direct current on propagating spin waves in a CoFeB/Ta bilayer structure. Using the micro-Brillouin light scattering technique, we observe that the spin wave amplitude may be attenuated or amplified depending on the direction of the current and the applied magnetic field. Our work suggests an effective approach for electrically controlling the propagation of spin wav…
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We investigate the effect of a direct current on propagating spin waves in a CoFeB/Ta bilayer structure. Using the micro-Brillouin light scattering technique, we observe that the spin wave amplitude may be attenuated or amplified depending on the direction of the current and the applied magnetic field. Our work suggests an effective approach for electrically controlling the propagation of spin waves in a magnetic waveguide and may be useful in a number of applications such as phase locked nano-oscillators and hybrid information processing devices.
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Submitted 22 April, 2014; v1 submitted 28 August, 2013;
originally announced August 2013.
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Gravity and magnetic field dependent study of diffraction patterns in ferrofluids
Authors:
M. Shalini,
Chintamani Pai,
S. Radha
Abstract:
In this paper, we report the experimental observation of diffraction patterns in a ferrofluid comprising of Fe3O4 nanoparticles in hexane by a 10 mW He-Ne laser beam. An external dc magnetic field (0-2 kG) was applied perpendicular to the beam. The diffraction pattern showed variation at different depths of the sample in both zero and applied magnetic field. The patterns also exhibit a change in s…
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In this paper, we report the experimental observation of diffraction patterns in a ferrofluid comprising of Fe3O4 nanoparticles in hexane by a 10 mW He-Ne laser beam. An external dc magnetic field (0-2 kG) was applied perpendicular to the beam. The diffraction pattern showed variation at different depths of the sample in both zero and applied magnetic field. The patterns also exhibit a change in shape and size as the external field is varied. This effect is presumably arising due to thermally induced self-diffraction under the influence of gravity and external magnetic field.
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Submitted 25 February, 2013;
originally announced February 2013.
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Gate voltage modulation of spin-Hall-torque-driven magnetic switching
Authors:
Luqiao Liu,
Chi-Feng Pai,
D. C. Ralph,
R. A. Buhrman
Abstract:
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better en…
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Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.
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Submitted 5 September, 2012;
originally announced September 2012.
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Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices
Authors:
Luqiao Liu,
Chi-Feng Pai,
D. C. Ralph,
R. A. Buhrman
Abstract:
We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal…
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We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for develo** tunable spin torque nano-oscillators.
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Submitted 4 September, 2012;
originally announced September 2012.
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Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
Authors:
Chi-Feng Pai,
Luqiao Liu,
Y. Li,
H. W. Tseng,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From swit…
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We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices we independently determine |θ|=0.33\pm0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.
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Submitted 8 August, 2012;
originally announced August 2012.
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Spin torque switching with the giant spin Hall effect of tantalum
Authors:
Luqiao Liu,
Chi-Feng Pai,
Y. Li,
H. W. Tseng,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report a giant spin Hall effect (SHE) in β-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane…
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We report a giant spin Hall effect (SHE) in β-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.
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Submitted 13 March, 2012;
originally announced March 2012.
