Topological phase transitions and Berry-phase hysteresis in exchange-coupled nanomagnets
Authors:
Ahsan Ullah,
Xin Li,
Yunlong **,
Rabindra Pahari,
Lan** Yue,
Xiaoshan Xu,
Balamurugan Balasubramanian,
David J. Sellmyer,
Ralph Skomski
Abstract:
Topological phase in magnetic materials yields a quantized contribution to the Hall effect known as the topological Hall effect, which is often caused by skyrmions, with each skyrmion creating a magnetic flux quantum h/e. The control and understanding of topological properties in nanostructured materials is the subject of immense interest for both fundamental science and technological applications…
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Topological phase in magnetic materials yields a quantized contribution to the Hall effect known as the topological Hall effect, which is often caused by skyrmions, with each skyrmion creating a magnetic flux quantum h/e. The control and understanding of topological properties in nanostructured materials is the subject of immense interest for both fundamental science and technological applications, especially in spintronics. In this work, the electron-transport properties and spin structure of exchange-coupled cobalt nanoparticles with an average particle size of 13.7 nm are studied experimentally and theoretically. Magnetic and Hall-effect measurements identify topological phase transitions in the exchange-coupled cobalt nanoparticles and were used to discover a qualitatively new type of hysteresis in the topological Hall effect namely, Berry-phase hysteresis. Micromagnetic simulations reveal the origin of the topological Hall effect namely, the chiral domains, with domain-wall chirality quantified by an integer skyrmion number. These spin structures are different from the skyrmions formed due to Dzyaloshinskii Moriya interactions in B20 crystals and multilayered thin films, and caused by cooperative magnetization reversal in the exchange-coupled cobalt nanoparticles. An analytical model is developed to explain the underlying physics of Berry-phase hysteresis, which is strikingly different from the iconic magnetic hysteresis and constitutes one aspect of 21st-century resha** of our view on nature at the borderline of physics, chemistry, mathematics, and materials science.
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Submitted 25 October, 2022;
originally announced October 2022.
Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
Authors:
Przemyslaw Wojciech Swatek,
Xudong Hang,
Yihong Fan,
Wei Jiang,
Hwanhui Yun,
Deyuan Lyu,
Delin Zhang,
Thomas J. Peterson,
Protyush Sahu,
Onri Jay Benally,
Zach Cresswell,
**ming Liu,
Rabindra Pahari,
Daniel Kukla,
Tony Low,
K. Andre Mkhoyan,
Jian-** Wang
Abstract:
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pum** measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 la…
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In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pum** measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pum** measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.
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Submitted 29 July, 2022; v1 submitted 18 July, 2022;
originally announced July 2022.