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Superconductivity in twisted bilayer WSe$_2$
Authors:
Yinjie Guo,
Jordan Pack,
Joshua Swann,
Luke Holtzman,
Matthew Cothrine,
Kenji Watanabe,
Takashi Taniguchi,
David Mandrus,
Katayun Barmak,
James Hone,
Andrew J. Millis,
Abhay N. Pasupathy,
Cory R. Dean
Abstract:
The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other…
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The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moiré TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures.
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Submitted 5 June, 2024;
originally announced June 2024.
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Charge-transfer Contact to a High-Mobility Monolayer Semiconductor
Authors:
Jordan Pack,
Yinjie Guo,
Ziyu Liu,
Bjarke S. Jessen,
Luke Holtzman,
Song Liu,
Matthew Cothrine,
Kenji Watanabe,
Takashi Taniguchi,
David G. Mandrus,
Katayun Barmak,
James Hone,
Cory R. Dean
Abstract:
Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconducto…
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Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole do** in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures.
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Submitted 30 October, 2023;
originally announced October 2023.
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Two-step flux synthesis of ultrapure transition metal dichalcogenides
Authors:
Song Liu,
Yang Liu,
Luke Nemetz Holtzman,
Baichang Li,
Madisen Holbrook,
Jordan Pack,
Takashi Taniguchi,
Kenji Watanabe,
Cory R. Dean,
Abhay Pasupathy,
Katayun Barmak,
Daniel A. Rhodes,
James Hone
Abstract:
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements…
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Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostructures fabricated from the two-step flux grown WSe2 also show superior performance: higher graphene mobility, lower charged impurity density, and well-resolved integer quantum Hall states.
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Submitted 28 March, 2023;
originally announced March 2023.
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High-Throughput $\textit{Ab Initio}$ Design of Atomic Interfaces using InterMatch
Authors:
Eli Gerber,
Steven B. Torrisi,
Sara Shabani,
Eric Seewald,
Jordan Pack,
Jennifer E. Hoffman,
Cory R. Dean,
Abhay N. Pasupathy,
Eun-Ah Kim
Abstract:
Forming a hetero-interface is a materials-design strategy that can access an astronomically large phase space. However, the immense phase space necessitates a high-throughput approach for optimal interface design. Here we introduce a high-throughput computational framework, InterMatch, for efficiently predicting charge transfer, strain, and superlattice structure of an interface by leveraging the…
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Forming a hetero-interface is a materials-design strategy that can access an astronomically large phase space. However, the immense phase space necessitates a high-throughput approach for optimal interface design. Here we introduce a high-throughput computational framework, InterMatch, for efficiently predicting charge transfer, strain, and superlattice structure of an interface by leveraging the databases of individual bulk materials. Specifically, the algorithm reads in the lattice vectors, density of states, and the stiffness tensors for each material in their isolated form from the Materials Project. From these bulk properties, InterMatch estimates the interfacial properties. We benchmark InterMatch predictions for the charge transfer against experimental measurements and supercell density-functional theory calculations. We then use InterMatch to predict promising interface candidates for do** transition metal dichalcogenide MoSe$_2$. Finally, we explain experimental observation of factor of 10 variation in the supercell periodicity within a few microns in graphene/$α$-RuCl$_3$ by exploring low energy superlattice structures as a function of twist angle using InterMatch. We anticipate our open-source InterMatch algorithm accelerating and guiding ever-growing interfacial design efforts. Moreover, the interface database resulting from the InterMatch searches presented in this paper can be readily accessed through https://contribs.materialsproject.org/projects/intermatch/ .
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Submitted 29 November, 2022;
originally announced November 2022.
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Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer
Authors:
Yusong Bai,
Yiliu Li,
Song Liu,
Yinjie Guo,
Jordan Pack,
Jue Wang,
Cory R. Dean,
James Hone,
X. -Y. Zhu
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over…
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Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moiré traps, their mutual repulsion results in de-trap** at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena.
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Submitted 3 August, 2023; v1 submitted 19 July, 2022;
originally announced July 2022.
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Broken symmetries and Kohn's theorem in graphene cyclotron resonance
Authors:
Jordan Pack,
B. Jordan Russell,
Yashika Kapoor,
Jesse Balgley,
Jeff Ahlers,
Takashi Taniguchi,
Kenji Watanabe,
Erik A. Henriksen
Abstract:
The magnetoplasmon spectrum of Landau level transitions in hexagonal boron nitride-encapsulated graphene is explored via infrared transmission magnetospectroscopy, as a function of the filling factor at fixed magnetic field. As the lowest Landau level occupancy is increased from half-filling, a non-monotonic progression of multiple cyclotron resonance peaks is observed, with a single peak evolving…
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The magnetoplasmon spectrum of Landau level transitions in hexagonal boron nitride-encapsulated graphene is explored via infrared transmission magnetospectroscopy, as a function of the filling factor at fixed magnetic field. As the lowest Landau level occupancy is increased from half-filling, a non-monotonic progression of multiple cyclotron resonance peaks is observed, with a single peak evolving into four peaks and back to two, all with linewidths of order 0.5 meV. This provides a novel window on the interplay of electron interactions with broken spin and valley symmetries in the quantum Hall regime. Analysis of the peak energies shows an indirect enhancement of spin gaps below the Fermi energy, a Dirac mass at half-filling that is nearly 50\% larger than when the lowest Landau level is completely full, and a small but clear particle-hole asymmetry. We suggest a key role is played by the boron nitride in enabling interaction-enhanced broken symmetries to be observed in graphene cyclotron resonance.
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Submitted 3 August, 2020; v1 submitted 23 January, 2020;
originally announced January 2020.