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Holistic numerical simulation of a quenching process on a real-size multifilamentary superconducting coil
Authors:
Cun Xue,
Han-Xi Ren,
Peng Jia,
Qing-Yu Wang,
Wei Liu,
Xian-** Ou,
Liang-Ting Sun,
Alejandro V Silhanek
Abstract:
Superconductors play a crucial role in the advancement of high-field electromagnets. Unfortunately, their performance can be compromised by thermomagnetic instabilities, wherein the interplay of rapid magnetic and slow heat diffusion can result in catastrophic flux jumps eventually leading to irreversible damage. This issue has long plagued high-$J_c$ Nb$_3$Sn wires at the core of high-field magne…
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Superconductors play a crucial role in the advancement of high-field electromagnets. Unfortunately, their performance can be compromised by thermomagnetic instabilities, wherein the interplay of rapid magnetic and slow heat diffusion can result in catastrophic flux jumps eventually leading to irreversible damage. This issue has long plagued high-$J_c$ Nb$_3$Sn wires at the core of high-field magnets. In this study, we introduce a groundbreaking large-scale GPU-optimized algorithm aimed at tackling the complex intertwined effects of electromagnetism, heating, and strain acting concomitantly during the quenching process of superconducting coils. We validate our model by conducting comparisons with magnetization measurements obtained from short multifilamentary Nb$_3$Sn wires and further experimental tests conducted on solenoid coils while subject to ram** transport currents. Furthermore, leveraging our developed numerical algorithm, we unveil the dynamic propagation mechanisms underlying thermomagnetic instabilities (including flux jumps and quenches) within the coils. Remarkably, our findings reveal that the velocity field of flux jumps and quenches within the coil is correlated with the amount of Joule heating experienced by each wire over a specific time interval, rather than solely being dependent on instantaneous Joule heating or maximum temperature. These insights have the potential to pave the way for optimizing the design of next-generation superconducting magnets, thereby directly influencing a wide array of technologically relevant and multidisciplinary applications.
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Submitted 12 March, 2024;
originally announced March 2024.
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Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance
Authors:
Zhe Cheng,
Fengwen Mu,
Xiaoyang Ji,
Tiangui You,
Wenhui Xu,
Tadatomo Suga,
Xin Ou,
David G. Cahill,
Samuel Graham
Abstract:
Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This…
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Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency TDTR map** technique to visualize the thermal conduction across buried semiconductor interfaces for beta-Ga2O3-SiC samples. Both the beta-Ga2O3 thermal conductivity and the buried beta-Ga2O3-SiC thermal boundary conductance (TBC) are visualized for an area of 200 um x 200 um. Areas with low TBC values ( smaller than 20 MW/m2-K) are successfully identified on the TBC map, which correspond to weakly bonded interfaces caused by high-temperature annealing. The steady-state temperature rise (detector voltage), usually ignored in TDTR measurements, is found to be able to probe TBC variations of the buried interfaces without the limit of thermal penetration depth. This technique can be applied to detect defects/voids in deeply buried heterogeneous interfaces non-destructively, and also opens a door for the visualization of thermal conductance in nanoscale nonhomogeneous structures.
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Submitted 14 March, 2021;
originally announced March 2021.
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Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique
Authors:
Zhe Cheng,
Fengwen Mu,
Tiangui You,
Wenhui Xu,
**g**g Shi,
Michael E. Liao,
Yekan Wang,
Kenny Huynh,
Tadatomo Suga,
Mark S. Goorsky,
Xin Ou,
Samuel Graham
Abstract:
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating,…
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The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline \b{eta}-Ga2O3 thin films on high thermal conductivity SiC substrates by ion-cutting technique. The thermal boundary conductance (TBC) of the \b{eta}-Ga2O3-SiC interfaces and thermal conductivity of the \b{eta}-Ga2O3 thin films were measured by Time-domain Thermoreflectance (TDTR) to evaluate the effects of interlayer thickness and thermal annealing. Materials characterizations were performed to understand the mechanisms of thermal transport in these structures. The results show that the \b{eta}-Ga2O3-SiC TBC values increase with decreasing interlayer thickness and the \b{eta}-Ga2O3 thermal conductivity increases more than twice after annealing at 800 oC due to the removal of implantation-induced strain in the films. A Callaway model is built to understand the measured thermal conductivity. Small spot-to-spot variations of both TBC and Ga2O3 thermal conductivity confirm the uniformity and high-quality of the bonding and exfoliation. Our work paves the way for thermal management of power electronics and \b{eta}-Ga2O3 related semiconductor devices.
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Submitted 26 May, 2020;
originally announced May 2020.
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Precise tuning of the superconducting properties of Mn-doped Al films for transition edge sensors by ion-implantation
Authors:
Yue Lv,
Hao Huang,
Tiangui You,
Feng Ren,
Xin Ou,
Bo Gao,
Zhen Wang
Abstract:
Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors (TES). We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implanta…
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Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors (TES). We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implantation provides more precise and reliable control of the Mn do** concentration in the AlMn films.The ion implantation also enables us to quantitatively analyze the superconducting transition temperature curve as a function of the Mn do** concentration. We found that Mn dopants act as magnetic impurities and suppression of superconductivity is counteracted by the antiferromagnetic Ruderman Kittel Kasuya Yosida interaction among Mn dopants. The RKKY interaction can be tuned through defect engineering in the ion-implantation process and through post-implantation annealing.
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Submitted 19 January, 2020;
originally announced January 2020.
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Giant magnetic anisotropy of Co, Ru, and Os adatoms on MgO (001) surface
Authors:
Xuedong Ou,
Hongbo Wang,
Fengren Fan,
Zhengwei Li,
Hua Wu
Abstract:
Large magnetic anisotropy energy (MAE) is desirable and critical for nanoscale magnetic devices. Here, using ligand-field level diagrams and density functional calculations, we well explain the very recent discovery [I. G. Rau et al., Science 344, 988 (2014)] that an individual Co adatom on a MgO (001) surface has a large MAE of more than 60 meV. More importantly, we predict that a giant MAE up to…
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Large magnetic anisotropy energy (MAE) is desirable and critical for nanoscale magnetic devices. Here, using ligand-field level diagrams and density functional calculations, we well explain the very recent discovery [I. G. Rau et al., Science 344, 988 (2014)] that an individual Co adatom on a MgO (001) surface has a large MAE of more than 60 meV. More importantly, we predict that a giant MAE up to 110 meV could be realized for Ru adatoms on MgO (001), and even more for the Os adatoms (208 meV). This is a joint effect of the special ligand field, orbital multiplet, and significant spin-orbit interaction, in the intermediate-spin state of the Ru or Os adatoms on top of the surface oxygens. The giant MAE could provide a route to atomic scale memory.
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Submitted 3 October, 2015;
originally announced October 2015.
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Long-range magnetic interaction and frustration in double perovskite Sr$_{2}$NiIrO$_{6}$
Authors:
Xuedong Ou,
Zhengwei Li,
Fengren Fan,
Hongbo Wang,
Hua Wu
Abstract:
Sr$_{2}$NiIrO$_{6}$ would be a ferromagnetic (FM) insulator in terms of the common superexchange mechanism between the first nearest neighboring (1NN) magnetic ions Ni$^{2+}$ ($t_{2g}^{6}e_{g}^{2}$) and Ir$^{6+}$ ($t_{2g}^{3}$). However, the observed antiferromagnetic (AF) order questions this viewpoint. In this work, we present first-principles calculations and find that while the 1NN Ni$^{2+}$-I…
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Sr$_{2}$NiIrO$_{6}$ would be a ferromagnetic (FM) insulator in terms of the common superexchange mechanism between the first nearest neighboring (1NN) magnetic ions Ni$^{2+}$ ($t_{2g}^{6}e_{g}^{2}$) and Ir$^{6+}$ ($t_{2g}^{3}$). However, the observed antiferromagnetic (AF) order questions this viewpoint. In this work, we present first-principles calculations and find that while the 1NN Ni$^{2+}$-Ir$^{6+}$ exchange is indeed FM, the 2NN and 3NN couplings in the fcc Ir (and Ni) sublattice are AF. Moreover, the 2NN AF Ir-Ir coupling turns out to be even stronger than the 1NN FM Ni-Ir coupling, thus giving rise to a magnetic frustration. Sr$_{2}$NiIrO$_{6}$ hence becomes a distorted low-temperature antiferromagnet. Naturally, a very similar magnetic property in Sr$_{2}$ZnIrO$_{6}$ can be explained by the frustrated AF coupling in the fcc Ir$^{6+}$ sublattice. This work highlights the long-range magnetic interaction of the delocalized $5d$ electrons, and also addresses why the spin-orbit coupling is ineffective here.
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Submitted 5 September, 2014;
originally announced September 2014.
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Ferrimagnetism in the double perovskite Ca2FeOsO6: a density functional study
Authors:
Hongbo Wang,
Shasha Zhu,
Xuedong Ou,
Hua Wu
Abstract:
Using density functional calculations, we find that the newly synthesized Ca$_2$FeOsO$_6$ has the high-spin Fe$^{3+}$ ($3d^5$)-Os$^{5+}$ ($5d^3$) state. The octahedral Os$^{5+}$ ion has a large intrinsic exchange splitting, and its $t_{2g\uparrow}^3$ configuration makes the spin-orbit coupling ineffective. Moreover, there is a strong antiferromagnetic (AF) coupling between the neighboring Fe…
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Using density functional calculations, we find that the newly synthesized Ca$_2$FeOsO$_6$ has the high-spin Fe$^{3+}$ ($3d^5$)-Os$^{5+}$ ($5d^3$) state. The octahedral Os$^{5+}$ ion has a large intrinsic exchange splitting, and its $t_{2g\uparrow}^3$ configuration makes the spin-orbit coupling ineffective. Moreover, there is a strong antiferromagnetic (AF) coupling between the neighboring Fe$^{3+}$ ($S$ = 5/2) and Os$^{5+}$ ($S$ = -3/2), but the AF couplings within both the fcc Fe$^{3+}$ and Os$^{5+}$ sublattices are one order of magnitude weaker. Therefore, a magnetic frustration is suppressed and a stable ferrimagnetic (FiM) ground state appears. This FiM order is due to the virtual hop** of the $t_{2g}$ electrons from Os$^{5+}$ ($t_{2g\downarrow}^3$) to Fe$^{3+}$ ($t_{2g\uparrow}^3e_{g\uparrow}^2$). However, if the experimental bended Fe$^{3+}$-O$^{2-}$-Os$^{5+}$ exchange path gets straight, the $e_g$ hop** from Fe$^{3+}$ ($t_{2g\uparrow}^3e_{g\uparrow}^2$) to Os$^{5+}$ ($t_{2g\uparrow}^3$) would be facilitated and then a ferromagnetic (FM) coupling would occur.
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Submitted 11 June, 2014;
originally announced June 2014.
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Black phosphorus field-effect transistors
Authors:
Likai Li,
Yijun Yu,
Guo Jun Ye,
Qingqin Ge,
Xuedong Ou,
Hua Wu,
Donglai Feng,
Xian Hui Chen,
Yuanbo Zhang
Abstract:
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is a tremendous challenge, and at the same time potentially rewarding. In this work, we succeed in fabricating field-effect transistors based on few-layer black p…
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Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is a tremendous challenge, and at the same time potentially rewarding. In this work, we succeed in fabricating field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometers. Drain current modulation on the order of 10E5 is achieved in samples thinner than 7.5 nm at room temperature, with well-developed current saturation in the IV characteristics, both are important for reliable transistor performance of the device. Sample mobility is also found to be thickness dependent, with the highest value up to ~ 1000 cm2/Vs obtained at thickness ~ 10 nm. Our results demonstrate the potential of black phosphorus thin crystal as a new two-dimensional material for future applications in nano-electronic devices.
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Submitted 16 January, 2014;
originally announced January 2014.
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Impact of spin-orbit coupling on the magnetism of Sr3MIrO6 (M = Ni, Co)
Authors:
Xuedong Ou,
Hua Wu
Abstract:
Using density functional calculations, we demonstrate that the spin-orbit coupling (SOC) of the Ir4+ ion plays an essential role in determining the antiferromagnetism of the hexagonal spin-chain system Sr3MIrO6 (M = Ni, Co) by tuning the crystal-field level sequence and altering the Ir-M inter-orbital interactions. The SOC splits the e'_{g} doublet of the octahedral Ir4+ ion (t_{2g}^5) in a trigon…
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Using density functional calculations, we demonstrate that the spin-orbit coupling (SOC) of the Ir4+ ion plays an essential role in determining the antiferromagnetism of the hexagonal spin-chain system Sr3MIrO6 (M = Ni, Co) by tuning the crystal-field level sequence and altering the Ir-M inter-orbital interactions. The SOC splits the e'_{g} doublet of the octahedral Ir4+ ion (t_{2g}^5) in a trigonal crystal field, and the single t_{2g} hole resides on the e'_{g} upper branch and gives rise to the antiferromagnetic superexchange. In absence of the SOC, however, the single t_{2g} hole would occupy the a_{1g} singlet instead, which would mediate an unreal ferromagnetic exchange due to a direct a_{1g} hop** along the Ir-M chain. We also find that the Ni2+ and Co2+ ions are both in a high-spin state and moreover the Co2+ ion carries a huge orbital moment. This work well accounts for the recent experiments and magnifies again the significance of the SOC in iridates.
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Submitted 28 December, 2013;
originally announced December 2013.
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Vacancy trap** behaviors of hydrogen atoms in Ti3SiC2: a first-principles study
Authors:
Yi-Guo Xu,
Xue-Dong Ou,
Xi-Ming Rong
Abstract:
The behaviors of hydrogen (H) in MAX phase material Ti3SiC2 have been investigated using first-principles method. We show that a single H atom prefers to stay 1.01 Å down of the Si vacancy with solution energy of about -4.07 eV, lowerthan that in bulk Ti3SiC2. Multi H atoms exhibit a repulsive interaction at the Si vacancy. And up to five H atoms can be trapped by a Si vacancy without H2 molecules…
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The behaviors of hydrogen (H) in MAX phase material Ti3SiC2 have been investigated using first-principles method. We show that a single H atom prefers to stay 1.01 Å down of the Si vacancy with solution energy of about -4.07 eV, lowerthan that in bulk Ti3SiC2. Multi H atoms exhibit a repulsive interaction at the Si vacancy. And up to five H atoms can be trapped by a Si vacancy without H2 molecules formation. These results suggest the strong vacancy trap** characteristic of H atoms in Ti3SiC2.
Meanwhile, the barrier for H diffusion from an interstitial site to a vacancy is 1.17 eV, which is much larger than that in metals, indicating that to some extent H atoms can not easily migrate or aggregate to form bubble in Ti3SiC.
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Submitted 4 August, 2013;
originally announced August 2013.
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Reverse epitaxy of Ge: ordered and facetted surface patterns
Authors:
Xin Ou,
Adrian Keller,
Manfred Helm,
Jürgen Fassbender,
Stefan Facsko
Abstract:
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250°C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfol…
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Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250°C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfold symmetry evolve on the Ge (100) surface, whereas on the Ge (111) surface, isotropic patterns with a sixfold symmetry emerge. After high fluence irradiations these patterns exhibit well developed facets. A deterministic nonlinear continuum equation accounting for the effective surface currents due to an Ehrlich-Schwoebel barrier for diffusing vacancies reproduces remarkably well our experimental observations.
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Submitted 20 March, 2013;
originally announced March 2013.
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InP nanocrystals on silicon for optoelectronic applications
Authors:
Slawomir Prucnal,
Shengqiang Zhou,
Xin Ou,
Helfried Reuther,
Maciej Oskar Liedke,
Arndt Mücklich,
Manfred Helm,
Jerzy Zuk,
Marcin Turek,
Krzysztof Pyszniak,
Wolfgang Skorupa
Abstract:
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct ba…
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One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct band gap III-V compound semiconductor material. In the paper we present the synthesis of single crystalline InP nanodots (NDs) on silicon using combined ion implantation and millisecond flash lamp annealing techniques. The optical and microstructural investigations reveal the growth of high-quality (100)-oriented InP nanocrystals. The current-voltage measurements confirm the formation of an n-p heterojunction between the InP NDs and silicon. The main advantage of our method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.
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Submitted 11 November, 2012;
originally announced November 2012.
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Substrate effect on the resistive switching in BiFeO3 thin films
Authors:
Yao Shuai,
Xin Ou,
Chuangui Wu,
Wanli Zhang,
Shengqiang Zhou,
Danilo Buerger,
Helfried Reuther,
Stefan Slesazeck,
Thomas Mikolajick,
Manfred Helm,
Heidemarie Schmidt
Abstract:
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top…
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BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors.
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Submitted 26 September, 2012;
originally announced September 2012.
