Showing 1–50 of 55 results for author: Otsuka, T

Microwave dependent quantum transport characteristics in GaN/AlGaN FETs

Authors: Motoya Shinozaki, Takaya Abe, Kazuma Matsumura, Takumi Aizawa, Takashi Kumasaka, Tomohiro Otsuka

Abstract: Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe th… ▽ More Defects in semiconductors, traditionally seen as detrimental to electronic device performance, have emerged as potential assets in quantum technologies due to their unique quantum properties. This study investigates the interaction between defects and quantum electron transport in GaN/AlGaN field-effect transistors, highlighting the observation of Fano resonances at low temperatures. We observe the resonance spectra and their dependence on gate voltage and magnetic fields. To explain the observed behavior, we construct the possible scenario as a Fano interferometer with finite width. Our findings reveal the potential of semiconductor defects to contribute to the development of quantum information processing, providing their role to key components in next-generation quantum devices. △ Less

Submitted 17 April, 2024; originally announced April 2024.

Comments: 14 pages, 6 figures

Dynamics of quantum cellular automata electron transition in triple quantum dots

Authors: Takumi Aizawa, Motoya Shinozaki, Yoshihiro Fujiwara, Takeshi Kumasaka, Wataru Izumida, Arne Ludwig, Andreas D. Wieck, Tomohiro Otsuka

Abstract: The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a tripl… ▽ More The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a triple quantum dot by using fast charge-state readout realized by rf reflectometry. We observe real-time charge transitions and analyze the tunneling rate comparing with the first-order tunneling processes. We also measure the gate voltage dependence of the QCA transition and show that it can be controlled by the voltage. △ Less

Submitted 10 March, 2024; originally announced March 2024.

Comments: 11pages, 4 figures

Kondo effect in electrostatically defined ZnO quantum dots

Authors: Kosuke Noro, Yusuke Kozuka, Kazuma Matsumura, Takeshi Kumasaka, Yoshihiro Fujiwara, Atsushi Tsukazaki, Masashi Kawasaki, Tomohiro Otsuka

Abstract: Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of… ▽ More Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO. △ Less

Submitted 21 November, 2023; originally announced November 2023.

Comments: 16 pages, 4 figures

Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry

Authors: Yoshihiro Fujiwara, Motoya Shinozaki, Kazuma Matsumura, Kosuke Noro, Riku Tataka, Shoichi Sato, Takeshi Kumasaka, Tomohiro Otsuka

Abstract: Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demons… ▽ More Semiconductor quantum dots are useful for controlling and observing quantum states and can also be used as sensors for reading out quantum bits and exploring local electronic states in nanostructures. However, challenges remain for the sensor applications, such as the trade-off between sensitivity and dynamic range and the issue of instability due to external disturbances. In this study, we demonstrate proportional-integral-differential feedback control of the radio-frequency reflectometry in GaN nanodevices using a field-programmable gate array. This technique can maintain the operating point of the charge sensor with high sensitivity. The system also realizes a wide dynamic range and high sensor sensitivity through the monitoring of the feedback signal. This method has potential applications in exploring dynamics and instability of electronic and quantum states in nanostructures. △ Less

Submitted 11 July, 2023; originally announced July 2023.

Comments: 13 pages, 5 figures

Journal ref: Applied Physics Letters 123, 213502 (2023)

Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs

Authors: Kazuma Matsumura, Takaya Abe, Takahito Kitada, Takeshi Kumasaka, Norikazu Ito, Taketoshi Tanaka, Ken Nakahara, Tomohiro Otsuka

Abstract: Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and… ▽ More Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential. △ Less

Submitted 13 April, 2023; originally announced April 2023.

Comments: 10 pages, 5 figures

Journal ref: Applied Physics Express 16, 075003 (2023)

Stoichiometric growth of SrTiO3 films via Bayesian optimization with adaptive prior mean

Authors: Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger, Hiroshi Sawada, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growth of highly insulating stoichiometric SrTiO3 films remains challenging due to the difficulty of the precise stoichiometry control in perovskite oxide films. Here, to grow stoichiometric SrTiO3 thin films by fine-tuning m… ▽ More Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growth of highly insulating stoichiometric SrTiO3 films remains challenging due to the difficulty of the precise stoichiometry control in perovskite oxide films. Here, to grow stoichiometric SrTiO3 thin films by fine-tuning multiple growth conditions, we developed a new Bayesian optimization (BO)-based machine learning method that encourages the exploration of the search space by varying the prior mean to get out of suboptimal growth condition parameters. Using simulated data, we demonstrate the efficacy of the new BO method, which reproducibly reaches the global best conditions. With the BO method implemented in machine-learning-assisted molecular beam epitaxy (ML-MBE), highly insulating stoichiometric SrTiO3 film with no absorption in the band gap was developed in only 44 MBE growth runs. The proposed algorithm provides an efficient experimental design platform that is not as dependent on the experience of individual researchers and will accelerate not only oxide electronics but also various material syntheses. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates

Authors: Tomoya Johmen, Motoya Shinozaki, Yoshihiro Fujiwara, Takumi Aizawa, Tomohiro Otsuka

Abstract: Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which en… ▽ More Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which enables high-speed electric measurements is important. Here we demonstrate RF-reflectometry in bilayer graphene devices. We utilize a micro graphite back-gate and an undoped Si substrate to reduce the parasitic capacitance which degrades the RF-reflectometry. We measure the resonance properties of a tank circuit which contains the bilayer graphene device. We form RF-reflectmetory setup and compared the result with the DC measurement, and confirmed their consistency. We also measure Coulomb diamonds of quantum dots possibly formed by bubbles and confirm that RF-reflectometry of quantum dots can be performed. This technique enables high-speed measurements of bilayer graphene quantum dots and contributes to the research of bilayer graphene-based quantum devices by fast readout of the states. △ Less

Submitted 30 November, 2022; originally announced December 2022.

Comments: 16 pages, 5 figures

Journal ref: Physical Review Applied 20, 014035 (2023)

Electronic phase diagram in Te-annealed superconducting FeTe$_{1-x}$Se$_x$ revealed by magnetic susceptibility

Authors: Takenori Fujii, Yu Uezono, Takumi Otsuka, Shotaro Hagisawa, Takao Watanabe

Abstract: Knowledge of the do** (x)-temperature (T) phase diagram of Fe-based superconductors is crucial in understanding the mechanism of high transition temperature superconductivity. Here, we measured the Se do** dependence of the magnetic susceptibility for Te-annealed FeTe$_{1-x}$Se$_x$. Two characteristic temperatures $T^*_χ$ and $T^{**}_χ$ were observed in the temperature dependence of magnetic s… ▽ More Knowledge of the do** (x)-temperature (T) phase diagram of Fe-based superconductors is crucial in understanding the mechanism of high transition temperature superconductivity. Here, we measured the Se do** dependence of the magnetic susceptibility for Te-annealed FeTe$_{1-x}$Se$_x$. Two characteristic temperatures $T^*_χ$ and $T^{**}_χ$ were observed in the temperature dependence of magnetic susceptibility, where the magnetic susceptibility decreased below T$^{**}_χ$ and tended to increase with further decreasing temperature below T$^*_χ$. The decrease in magnetic susceptibility below T$^{**}_χ$ is considered to be due to the opening of the pseudogap. Whereas the increase in magnetic susceptibility below T$^*_χ$ is attributed to the increase in the carrier concentration of electrons. Furthermore, we found the large superconducting fluctuation, which may be related to BCS-BEC crossover. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Comments: 6 pages, 3 figures. to be published in JPS Conference Proceedings

Visual explanations of machine learning model estimating charge states in quantum dots

Authors: Yui Muto, Takumi Nakaso, Motoya Shinozaki, Takumi Aizawa, Takahito Kitada, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Akito Noiri, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha, Atsunori Kanemura, Motoki Shiga, Tomohiro Otsuka

Abstract: Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box,… ▽ More Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box, will be useful. In this study, we analyze the explainability of the machine learning model estimating charge states in quantum dots by gradient-weighted class activation map**, which identified class-discriminative regions for the predictions. The model predicts the state based on the change transition lines, indicating that human-like recognition is realized. We also demonstrate improvements of the model by utilizing feedback from the map** results. Due to the simplicity of our simulation and pre-processing methods, our approach offers scalability without significant additional simulation costs, demonstrating its suitability for future quantum dot system expansions. △ Less

Submitted 27 December, 2023; v1 submitted 26 October, 2022; originally announced October 2022.

Comments: 17 pages, 4 figures

Journal ref: APL Machine Learning 2, 026110 (2024)

Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers

Authors: Riku Tataka, Alka Sharma, Tomoya Johmen, Takeshi Kumasaka, Motoya Shinozaki, Yong P. Chen, Tomohiro Otsuka

Abstract: The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the… ▽ More The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a step** stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems. △ Less

Submitted 21 October, 2022; originally announced October 2022.

Comments: 11 pages, 4 figures

Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover

Authors: Yu Uezono, Takumi Otsuka, Shotaro Hagisawa, Haruka Taniguchi, Michiaki Matsukawa, Takenori Fujii, Takao Watanabe

Abstract: Recently, the superconductors' community has witnessed an unsettled debate regarding whether iron-based superconductors, in particular FeSe and FeSe$_{1-x}$S$_x$, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einstein condensation (BEC) crossover regime. Nonetheless, one particular system, FeTe$_{1-x}$Se$_x$, has been less investigated in this regard owing to the screening of its intrinsic supe… ▽ More Recently, the superconductors' community has witnessed an unsettled debate regarding whether iron-based superconductors, in particular FeSe and FeSe$_{1-x}$S$_x$, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einstein condensation (BEC) crossover regime. Nonetheless, one particular system, FeTe$_{1-x}$Se$_x$, has been less investigated in this regard owing to the screening of its intrinsic superconducting properties by the inevitable iron excess. Herein, the onset temperatures for superconducting fluctuations ($T_{scf}$) are investigated by measuring the magnetoresistance (MR) of Te-annealed, high-quality FeTe$_{1-x}$Se$_x$ ($x$ = 0.1, 0.2, 0.3, and 0.4) single crystals. The results reveal very high $T_{scf}$ values for these crystals. Particularly for $x$ = 0.4, $T_{scf}$ reaches approximately 40 K, which is 2.7 times larger than $T_c$. This indicates that the superconductivity of the FeTe$_{1-x}$Se$_x$ system is well within the BCS-BEC crossover regime. △ Less

Submitted 17 September, 2022; originally announced September 2022.

Comments: 6 pages, 3 figures, and 1 table. to be published in JPS Conference Proceedings

Bayesian optimization with experimental failure for high-throughput materials growth

Authors: Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger, Hiroshi Sawada, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters.… ▽ More A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters. The proposed method provides a flexible optimization algorithm capable of searching a wide multi-dimensional parameter space. We demonstrate the effectiveness of the method with simulated data as well as in its implementation for actual materials growth, namely machine-learning-assisted molecular beam epitaxy (ML-MBE) of SrRuO3, which is widely used as a metallic electrode in oxide electronics. Through the exploitation and exploration in a wide three-dimensional parameter space, while complementing the missing data, we attained tensile-strained SrRuO3 film with a high residual resistivity ratio of 80.1, the highest among tensile-strained SrRuO3 films ever reported, in only 35 MBE growth runs. △ Less

Submitted 11 April, 2022; originally announced April 2022.

Enhanced superconducting pairing strength near a nonmagnetic nematic quantum critical point

Authors: K. Mukasa, K. Ishida, S. Imajo, M. W. Qiu, M. Saito, K. Matsuura, Y. Sugimura, S. Liu, Y. Uezono, T. Otsuka, M. Čulo, S. Kasahara, Y. Matsuda, N. E. Hussey, T. Watanabe, K. Kindo, T. Shibauchi

Abstract: The quest for high-temperature superconductivity at ambient pressure is a central issue in physics. In this regard, the relationship between unconventional superconductivity and the quantum critical point (QCP) associated with the suppression of some form of symmetry-breaking order to zero temperature has received particular attention. The key question is how the strength of the electron pairs cha… ▽ More The quest for high-temperature superconductivity at ambient pressure is a central issue in physics. In this regard, the relationship between unconventional superconductivity and the quantum critical point (QCP) associated with the suppression of some form of symmetry-breaking order to zero temperature has received particular attention. The key question is how the strength of the electron pairs changes near the QCP, and this can be verified by high-field experiments. However, such studies are limited mainly to superconductors with magnetic QCPs, and the possibility of unconventional mechanisms by which nonmagnetic QCP promotes strong pairing remains a nontrivial issue. Here, we report systematic measurements of the upper critical field $H_{\rm c2}$ in nonmagnetic FeSe$_{1-x}$Te$_{x}$ superconductors, which exhibit a QCP of electronic nematicity characterized by spontaneous rotational-symmetry breaking. As the magnetic field increases, the superconducting phase of FeSe$_{1-x}$Te$_{x}$ shrinks to a narrower dome surrounding the nematic QCP. The analysis of $H_{\rm c2}$ reveals that the Pauli-limiting field is enhanced toward the QCP, implying that the pairing interaction is significantly strengthened via nematic fluctuations emanated from the QCP. Remarkably, this nonmagnetic nematic QCP is not accompanied by a divergent effective mass, distinct from the magnetically mediated pairing. Our observation opens up a nonmagnetic route to high-temperature superconductivity. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. X 13, 011032 (2023)

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Authors: Motoya Shinozaki, Yui Muto, Takahito Kitada, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Akito Noiri, Takumi Ito, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha, Tomohiro Otsuka

Abstract: We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the fl… ▽ More We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time. △ Less

Submitted 12 January, 2021; v1 submitted 7 December, 2020; originally announced December 2020.

Journal ref: Applied Physics Express 14, 035002 (2021)

Probabilistic teleportation of a quantum dot spin qubit

Authors: Y. Kojima, T. Nakajima, A. Noiri, J. Yoneda, T. Otsuka, K. Takeda, S. Li, S. D. Bartlett, A. Ludwig, A. D. Wieck, S. Tarucha

Abstract: Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantu… ▽ More Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantum teleportation based on direct Bell measurement for a single electron spin qubit in a triple quantum dot utilizing the Pauli exclusion principle to create and detect maximally entangled state s . T he single spin polarization is teleported from the input qubit to the output qubit with a fidelity of 0.9 1 We find this fidelity is primarily limited by singlet triplet mixing which can be improved by optimizing the device parameters Our results may be extended to quantum algorithms with a larger number of se miconductor spin qubit s △ Less

Submitted 9 November, 2020; originally announced November 2020.

Journal ref: npj Quantum Information 7, 68 (2021)

Electronic phase diagram of Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ revealed by magnetotransport measurements

Authors: Takao Watanabe, Takumi Otsuka, Shotaro Hagisawa, Yuta Koshika, Shintaro Adachi, Tomohiro Usui, Nae Sasaki, Seya Sasaki, Shunpei Yamaguchi, Yu Uezono, Yoshiki Nakanishi, Masahito Yoshizawa, Shojiro Kimura

Abstract: Among the Fe-based superconductors, Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ is unique in that its crystal structure is the simplest and the electron correlation level is the strongest, and thus it is important to investigate the do**($x$)-temperature ($T$) phase diagram of this system. However, inevitably incorporated excess Fe currently prevents the establishment of the true phase diagram. We overcome the… ▽ More Among the Fe-based superconductors, Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ is unique in that its crystal structure is the simplest and the electron correlation level is the strongest, and thus it is important to investigate the do**($x$)-temperature ($T$) phase diagram of this system. However, inevitably incorporated excess Fe currently prevents the establishment of the true phase diagram. We overcome the aforementioned significant problem via develo** a new annealing method termed as "Te-annealing" wherein single crystals are annealed under Te vapor. Specifically, we conducted various magnetotransport measurements on Te-annealed superconducting Fe$_{1+y}$Te$_{1-x}$Se$_{x}$. We observed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occurs at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the emergence of a phase with a multi-band nature at lower temperatures (below $\approx$ 50 K for $x$ = 0.2) before superconductivity sets in. Based on the results, the third type electronic phase diagram in Fe-based high-$T_c$ superconductors is revealed. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Comments: 10 pages, 5 figures, Proceedings of the International conference for ECSN-2019, Odessa, Ukraine

Journal ref: Modern Physics Letters B Vol. 34, Nos. 19 & 20 (2020) 2040051

Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide

Authors: Kosuke Takiguchi, Yuki K. Wakabayashi, Hiroshi Irie, Yoshiharu Krockenberger, Takuma Otsuka, Hiroshi Sawada, Sergey A. Nikolaev, Hena Das, Masaaki Tanaka, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials rema… ▽ More Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials remains elusive. SrRuO3, a 4d ferromagnetic metal often used as an epitaxial conducting layer in oxide heterostructures, provides a promising opportunity to seek for the existence of magnetic Weyl fermions. Advanced oxide thin film preparation techniques, driven by machine learning technologies, may allow access to such topological matter. Here we show direct quantum transport evidence of magnetic Weyl fermions in an epitaxial ferromagnetic oxide SrRuO3: unsaturated linear positive magnetoresistance (MR), chiral-anomaly-induced negative MR, Pi Berry phase accumulated along cyclotron orbits, light cyclotron masses and high quantum mobility of about 10000 cm2/Vs. We employed machine-learning-assisted molecular beam epitaxy (MBE) to synthesize SrRuO3 films whose quality is sufficiently high to probe their intrinsic quantum transport properties. We also clarified the disorder dependence of the transport of the magnetic Weyl fermions, and provided a brand-new diagram for the Weyl transport, which gives a clear guideline for accessing the topologically nontrivial transport phenomena. Our results establish SrRuO3 as a magnetic Weyl semimetal and topological oxide electronics as a new research field. △ Less

Submitted 26 July, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Spin orbit field in a physically defined p type MOS silicon double quantum dot

Authors: Marian Marx, Jun Yoneda, Ángel Gutiérrez Rubio, Peter Stano, Tomohiro Otsuka, Kenta Takeda, Sen Li, Yu Yamaoka, Takashi Nakajima, Akito Noiri, Daniel Loss, Tetsuo Kodera, Seigo Tarucha

Abstract: We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel.… ▽ More We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components. △ Less

Submitted 17 March, 2020; v1 submitted 16 March, 2020; originally announced March 2020.

Comments: 21 pages, 4 figures

Formation of quantum dots in GaN/AlGaN FETs

Authors: Tomohiro Otsuka, Takaya Abe, Takahito Kitada, Norikazu Ito, Taketoshi Tanaka, Ken Nakahara

Abstract: GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potenti… ▽ More GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels. △ Less

Submitted 18 May, 2020; v1 submitted 9 February, 2020; originally announced February 2020.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 10, 15421 (2020)

Coherence of a driven electron spin qubit actively decoupled from quasi-static noise

Authors: Takashi Nakajima, Akito Noiri, Kento Kawasaki, Jun Yoneda, Peter Stano, Shinichi Amaha, Tomohiro Otsuka, Kenta Takeda, Matthieu R. Delbecq, Giles Allison, Arne Ludwig, Andreas D. Wieck, Daniel Loss, Seigo Tarucha

Abstract: The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity,… ▽ More The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $π$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits. △ Less

Submitted 13 March, 2020; v1 submitted 9 January, 2020; originally announced January 2020.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. X 10, 011060 (2020)

Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films

Authors: Yuki K. Wakabayashi, Takuma Otsuka, Yoshiharu Krockenberger, Hiroshi Sawada, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in th… ▽ More Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in the research field of oxide electronics, mainly owing to its unique nature as a ferromagnetic metal. To simplify the intricate search space of entangled growth conditions, we ran the BO for a single condition while kee** the other conditions fixed. As a result, high-crystalline-quality SrRuO3 film exhibiting a high residual resistivity ratio (RRR) of over 50 as well as strong perpendicular magnetic anisotropy was developed in only 24 MBE growth runs in which the Ru flux rate, growth temperature, and O3-nozzle-to-substrate distance were optimized. Our BO-based search method provides an efficient experimental design that is not as dependent on the experience and skills of individual researchers, and it reduces experimental time and cost, which will accelerate materials research. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Incoherent-coherent crossover and the pseudogap in Te-annealed superconducting Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ revealed by magnetotransport measurements

Authors: Takumi Otsuka, Shotaro Hagisawa, Yuta Koshika, Shintaro Adachi, Tomohiro Usui, Nae Sasaki, Seya Sasaki, Shunpei Yamaguchi, Yoshiki Nakanishi, Masahito Yoshizawa, Shojiro Kimura, Takao Watanabe

Abstract: In this study, we conducted various magnetotransport measurements on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ single crystals from which excess iron was sufficiently removed. Our results revealed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occur at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the… ▽ More In this study, we conducted various magnetotransport measurements on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ single crystals from which excess iron was sufficiently removed. Our results revealed that crossover from the incoherent to the coherent electronic state and opening of the pseudogap occur at high temperatures ($\approx$ 150 K for $x$ = 0.2). This is accompanied by a more substantial pseudogap and the emergence of a phase with a multi-band nature at lower temperatures (below $\approx$ 50 K for $x$ = 0.2) before superconductivity sets in. A comparison of these results with those of the as-grown (non-superconducting) samples implies that the coherent state accompanied by the pseudogap is needed for the occurrence of superconductivity in this system. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Comments: 9 pages, 7 figures

Journal ref: Physical Review B, 99, (2019) 184505-1-9

Quantum nondemolition measurement of an electron spin qubit

Authors: Takashi Nakajima, Akito Noiri, Jun Yoneda, Matthieu R. Delbecq, Peter Stano, Tomohiro Otsuka, Kenta Takeda, Shinichi Amaha, Giles Allison, Kento Kawasaki, Arne Ludwig, Andreas D. Wieck, Daniel Loss, Seigo Tarucha

Abstract: Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defin… ▽ More Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot via an exchange-coupled ancilla qubit. The ancilla qubit, encoded in the singlet-triplet two-electron subspace, is entangled with the single spin and subsequently read out in a single shot projective measurement at a rate two orders of magnitude faster than the spin relaxation. The QND nature of the measurement protocol is evidenced by observing a monotonic increase of the readout fidelity over one hundred repetitive measurements against arbitrary input states. We extract information from the measurement record using the method of optimal inference, which is tolerant to the presence of the relaxation and dephasing. The QND measurement allows us to observe spontaneous spin flips (quantum jumps) in an isolated system with small disturbance. Combined with the high-fidelity control of spin qubits, these results pave the way for various measurement-based quantum state manipulations including quantum error correction protocols. △ Less

Submitted 25 April, 2019; originally announced April 2019.

Comments: This is a pre-print of an article published in Nature Nanotechnology. The final authenticated version is available online at: https://doi.org/10.1038/s41565-019-0426-x

Journal ref: Nature Nanotechnology (2019)

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Authors: K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera, S. Tarucha

Abstract: Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of… ▽ More Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity > 99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high fidelity qubit with electron spins in quantum dots. △ Less

Submitted 29 October, 2018; originally announced October 2018.

Journal ref: npj Quantum Information (2018) 4:54

Difference in charge and spin dynamics in a quantum dot-lead coupled system

Authors: Tomohiro Otsuka, Takashi Nakajima, Matthieu R. Delbecq, Peter Stano, Shinichi Amaha, Jun Yoneda, Kenta Takeda, Giles Allison, Sen Li, Akito Noiri, Takumi Ito, Daniel Loss, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha

Abstract: We analyze time evolution of charge and spin states in a quantum dot coupled to an electric reservoir. Utilizing high-speed single-electron detection, we focus on dynamics induced by the first-order tunneling. We find that there is a difference between the spin and the charge relaxation: the former appears slower than the latter. The difference depends on the Fermi occupation factor and the spin r… ▽ More We analyze time evolution of charge and spin states in a quantum dot coupled to an electric reservoir. Utilizing high-speed single-electron detection, we focus on dynamics induced by the first-order tunneling. We find that there is a difference between the spin and the charge relaxation: the former appears slower than the latter. The difference depends on the Fermi occupation factor and the spin relaxation becomes slower when the energy level of the quantum dot is lowered. We explain this behavior by a theory which includes the first-order tunneling processes. We conduct detailed comparison of the experiment and the theory with changing the energy of the quantum dot levels, and the theory can reproduce the experimental results. △ Less

Submitted 15 August, 2018; originally announced August 2018.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 99, 085402 (2019)

Four single-spin Rabi oscillations in a quadruple quantum dot

Authors: Takumi Ito, Tomohiro Otsuka, Takashi Nakajima, Matthieu R. Delbecq, Shinichi Amaha, Jun Yoneda, Kenta Takeda, Akito Noiri, Giles Allison, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha

Abstract: Scaling up qubits is a necessary step to realize useful systems of quantum computation. Here we demonstrate coherent manipulations of four individual electron spins using a micro-magnet method in a quadruple quantum dot - the largest number of dots used for the single spin control in multiple quantum dots. We observe Rabi oscillations and electron spin resonance (ESR) for each dot and evaluate the… ▽ More Scaling up qubits is a necessary step to realize useful systems of quantum computation. Here we demonstrate coherent manipulations of four individual electron spins using a micro-magnet method in a quadruple quantum dot - the largest number of dots used for the single spin control in multiple quantum dots. We observe Rabi oscillations and electron spin resonance (ESR) for each dot and evaluate the spin-electric coupling of the four dots, and finally discuss practical approaches to independently address single spin control in multiple quantum dot systems containing even more quantum dots. △ Less

Submitted 15 May, 2018; originally announced May 2018.

Comments: 5 pages, 4 figures

A fast quantum interface between different spin qubit encodings

Authors: A. Noiri, T. Nakajima, J. Yoneda, M. R. Delbecq, P. Stano, T. Otsuka, K. Takeda, S. Amaha, G. Allison, K. Kawasaki, Y. Kojima, A. Ludwig, A. D. Wieck, D. Loss, S. Tarucha

Abstract: Single-spin qubits in semiconductor quantum dots proposed by Loss and DiVincenzo (LD qubits) hold promise for universal quantum computation with demonstrations of a high single-qubit gate fidelity above 99.9 % and two-qubit gates in conjunction with a long coherence time. However, initialization and readout of a qubit is orders of magnitude slower than control, which is detrimental for implementin… ▽ More Single-spin qubits in semiconductor quantum dots proposed by Loss and DiVincenzo (LD qubits) hold promise for universal quantum computation with demonstrations of a high single-qubit gate fidelity above 99.9 % and two-qubit gates in conjunction with a long coherence time. However, initialization and readout of a qubit is orders of magnitude slower than control, which is detrimental for implementing measurement-based protocols such as error-correcting codes. In contrast, a singlet-triplet (ST) qubit, encoded in a two-spin subspace, has the virtue of fast readout with high fidelity and tunable coupling to the electric field. Here, we present a hybrid system which benefits from the different advantages of these two distinct spin-qubit implementations. A quantum interface between the two codes is realized by electrically tunable inter-qubit exchange coupling. We demonstrate a controlled-phase (CPHASE) gate that acts within 5.5 ns, much faster than the measured dephasing time of 211 ns. The presented hybrid architecture will be useful to settle remaining key problems with building scalable spin-based quantum computers. △ Less

Submitted 29 November, 2018; v1 submitted 12 April, 2018; originally announced April 2018.

Journal ref: Nature Communications 9, 5066 (2018)

Co-tunneling spin blockade observed in a three-terminal triple quantum dot

Authors: A. Noiri, T. Takakura, T. Obata, T. Otsuka, T. Nakajima, J. Yoneda, S. Tarucha

Abstract: We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right dot with the left and right leads as a common source and the center lead as a drain. In the biased stability diagram, we establish Pauli spin blockade in the resp… ▽ More We prepare a triple quantum dot with a separate contact lead to each dot to study Pauli spin blockade in the tunnel-coupled three dots in a row. We measure the tunneling current flowing between the center dot and either the left or right dot with the left and right leads as a common source and the center lead as a drain. In the biased stability diagram, we establish Pauli spin blockade in the respective neighboring dots, with features similarly obtained in double quantum dot systems. We further realize Pauli spin blockade with two different conditions by tuning the inter-dot coupling gates: strong and weak inter-dot tunnel coupling regimes. In the strong-coupling regime we observe significant suppression of co-tunneling through the respective double dots due to Pauli spin blockade. We reveal the influence from the third dot in the triple dot device on this co-tunneling Pauli spin blockade and clarify that the co-tunneling Pauli spin blockade is lifted by the resonant coupling of excited states to the third dot level as well as spin exchange of the left and right dots with the adjacent reservoir. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 96, 155414 (2017)

A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

Authors: J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, S. Tarucha

Abstract: Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation… ▽ More Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability. △ Less

Submitted 4 August, 2017; originally announced August 2017.

Journal ref: Nature Nanotechnology 13, 102-106 (2018)

A triangular triple quantum dot with tunable tunnel couplings

Authors: A. Noiri, K. Kawasaki, T. Otsuka, T. Nakajima, J. Yoneda, S. Amaha, M. R. Delbecq, K. Takeda, G. Allison, A. Ludwig, A. D. Wieck, S. Tarucha

Abstract: A two-dimensional arrangement of quantum dots with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a tunnel-coupled triangular triple quantum dot with a novel gate geometry in which three dots are defined by positively biasing the surface gates. At the same time,… ▽ More A two-dimensional arrangement of quantum dots with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a tunnel-coupled triangular triple quantum dot with a novel gate geometry in which three dots are defined by positively biasing the surface gates. At the same time, the small area in the center of the triangle is depleted by negatively biasing the top gate placed above the surface gates. The size of the small center depleted area is estimated from the Aharonov-Bohm oscillation measured for the triangular channel but incorporating no gate-defined dots, with a value consistent with the design. With this approach, we can bring the neighboring gate-defined dots close enough to one another to maintain a finite inter-dot tunnel coupling. We finally confirm the presence of the inter-dot tunnel couplings in the triple quantum dot from the measurement of tunneling current through the dots in the stability diagram. We also show that the charge occupancy of each dot and that the inter-dot tunnel couplings are tunable with gate voltages. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Comments: accepted on Semiconductor Science and Technology

Journal ref: Semiconductor Science and Technology 32, 084004 (2017)

Cusp singularity in mean field Ising model

Authors: Yayoi Abe, Muneyuki Ishida, Erika Nozawa, Takayoshi Ootsuka, Ryoko Yahagi

Abstract: An entropy of the Ising model in the mean field approximation is derived by the Hamilton-Jacobi formalism. We consider a grand canonical ensemble with respect to the temperature and the external magnetic field. A cusp arises at the critical point, which shows a simple and new geometrical aspect of this model. In educational sense, this curve with a cusp helps students acquire a more intuitive view… ▽ More An entropy of the Ising model in the mean field approximation is derived by the Hamilton-Jacobi formalism. We consider a grand canonical ensemble with respect to the temperature and the external magnetic field. A cusp arises at the critical point, which shows a simple and new geometrical aspect of this model. In educational sense, this curve with a cusp helps students acquire a more intuitive view on statistical phase transitions. △ Less

Submitted 8 February, 2017; originally announced February 2017.

Comments: 14 pages, 8 figures

Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array

Authors: Takashi Nakajima, Matthieu R. Delbecq, Tomohiro Otsuka, Peter Stano, Shinichi Amaha, Jun Yoneda, Akito Noiri, Kento Kawasaki, Kenta Takeda, Giles Allison, Arne Ludwig, Andreas D. Wieck, Daniel Loss, Seigo Tarucha

Abstract: We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the durati… ▽ More We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon. △ Less

Submitted 20 July, 2017; v1 submitted 13 January, 2017; originally announced January 2017.

Comments: 13 pages, 3 figures

Journal ref: Physical Review Letters 119, 017701 (2017)

Fast probe of local electronic states in nanostructures utilizing a single-lead quantum dot

Authors: Tomohiro Otsuka, Shinichi Amaha, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Retsu Sugawara, Giles Allison, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha

Abstract: Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs.… ▽ More Transport measurements are powerful tools to probe electronic properties of solid-state materials. To access properties of local electronic states in nanostructures, such as local density of states, electronic distribution and so on, micro-probes utilizing artificial nanostructures have been invented to perform measurements in addition to those with conventional macroscopic electronic reservoirs. Here we demonstrate a new kind of micro-probe: a fast single-lead quantum dot probe, which utilizes a quantum dot coupled only to the target structure through a tunneling barrier and fast charge readout by RF reflectometry. The probe can directly access the local electronic states with wide bandwidth. The probe can also access more electronic states, not just those around the Fermi level, and the operations are robust against bias voltages and temperatures. △ Less

Submitted 7 October, 2016; originally announced October 2016.

Comments: 6 pages, 6 figures

Journal ref: Scientific Reports 5, 14616 (2015)

Tunneling induced spin dynamics in a quantum dot-lead hybrid system

Authors: Tomohiro Otsuka, Takashi Nakajima, Matthieu R. Delbecq, Shinichi Amaha, Jun Yoneda, Kenta Takeda, Giles Allison, Peter Stano, Akito Noiri, Takumi Ito, Daniel Loss, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha

Abstract: Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and readout have been established down to a single electron level. We use these techniques to explore spin dynamics in a hybrid system, namely a QD coupled to a two… ▽ More Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and readout have been established down to a single electron level. We use these techniques to explore spin dynamics in a hybrid system, namely a QD coupled to a two dimensional electronic reservoir. The proximity of the lead results in relaxation dynamics of both charge and spin, the mechanism of which is revealed by comparing the charge and spin signal. For example, higher order charge tunneling events can be monitored by observing the spin. We expect these results to stimulate further exploration of spin dynamics in QD-lead hybrid systems and expand the possibilities for controlled spin manipulations. △ Less

Submitted 26 August, 2016; originally announced August 2016.

Comments: 5 pages, 4 figures

Journal ref: Scientific Reports 7, 12201 (2017)

Detection and control of charge states in a quintuple quantum dot

Authors: Takumi Ito, Tomohiro Otsuka, Shinichi Amaha, Matthieu R. Delbecq, Takashi Nakajima, Jun Yoneda, Kenta Takeda, Giles Allison, Akito Noiri, Kento Kawasaki, Seigo Tarucha

Abstract: A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the five dots as confirmed by measurements of the charge states of the three nearest dots to the respective charge sensor. The gate performance of the measured stabili… ▽ More A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the five dots as confirmed by measurements of the charge states of the three nearest dots to the respective charge sensor. The gate performance of the measured stability diagram is well reproduced by a capacitance model.These results provide an important step towards realizing controllable large scale multiple quantum dot systems. △ Less

Submitted 15 April, 2016; originally announced April 2016.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 6, 39113 (2016)

Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot

Authors: Akito Noiri, Jun Yoneda, Takashi Nakajima, Tomohiro Otsuka, Matthiew R. Delbecq, Kenta Takeda, Shinichi Amaha, Giles Allison, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha

Abstract: Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micr… ▽ More Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the addressable manipulation of three single electron spins in a triple quantum dot using a technique combining electron-spin-resonance and a micro-magnet. The micro-magnet makes the local Zeeman field difference between neighboring spins much larger than the nuclear field fluctuation, which ensures the addressable driving of electron-spin-resonance by shifting the resonance condition for each spin. We observe distinct coherent Rabi oscillations for three spins in a semiconductor triple quantum dot with up to 25 MHz spin rotation frequencies. This individual manipulation over three spins enables us to arbitrarily change the magnetic spin quantum number of the three spin system, and thus to operate a triple-dot device as a three-qubit system in combination with the existing technique of exchange operations among three spins. △ Less

Submitted 13 April, 2016; originally announced April 2016.

Journal ref: Appl. Phys. Lett. 108, 153101 (2016)

Coherent transfer of electron spin correlations assisted by dephasing noise

Authors: Takashi Nakajima, Matthieu R. Delbecq, Tomohiro Otsuka, Shinichi Amaha, Jun Yoneda, Akito Noiri, Kenta Takeda, Giles Allison, Arne Ludwig, Andreas D. Wieck, Xuedong Hu, Franco Nori, Seigo Tarucha

Abstract: Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of ele… ▽ More Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of electron spins confined in semiconductor quantum dots. One party of an entangled spin pair, prepared at a single site, is transferred to the next site and then adiabatically swapped with a third spin using a transition across a multi-level avoided crossing. This process is accelerated by the noise-induced dephasing through a variant of the quantum Zeno effect, without sacrificing the coherence of the entangled state. Our finding brings insight into the spin dynamics in open quantum systems coupled to noisy environments, opening an avenue to quantum state manipulation utilizing decoherence effects. △ Less

Submitted 31 May, 2018; v1 submitted 8 April, 2016; originally announced April 2016.

Comments: 33 pages, 5 figures

Journal ref: Nature Communications 9, 2133 (2018)

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Authors: K. Takeda, J. Kamioka, T. Otsuka, J. Yoneda, T. Nakajima, M. R. Delbecq, S. Amaha, G. Allison, T. Kodera, S. Oda, S. Tarucha

Abstract: Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double q… ▽ More Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Journal ref: Science Advances 2, e1600694 (2016)

Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise

Authors: M. R. Delbecq, T. Nakajima, P. Stano, T. Otsuka, S. Amaha, J. Yoneda, K. Takeda, G. Allison, A. Ludwig, A. D. Wieck, S. Tarucha

Abstract: We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutua… ▽ More We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics. △ Less

Submitted 26 January, 2016; v1 submitted 29 December, 2015; originally announced December 2015.

Comments: revised version. main text: 5 pages, 4 figures; supplementary material: 8 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 046802 (2016)

Single-electron Spin Resonance in a Quadruple Quantum Dot

Authors: Tomohiro Otsuka, Takashi Nakajima, Matthieu R. Delbecq, Shinichi Amaha, Jun Yoneda, Kenta Takeda, Giles Allison, Takumi Ito, Retsu Sugawara, Akito Noiri, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha

Abstract: Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system.… ▽ More Electron spins in semiconductor quantum dots are good candidates of quantum bits for quantum information processing. Basic operations of the qubit have been realized in recent years: initialization, manipulation of single spins, two qubit entanglement operations, and readout. Now it becomes crucial to demonstrate scalability of this architecture by conducting spin operations on a scaled up system. Here, we demonstrate single-electron spin resonance in a quadruple quantum dot. A few-electron quadruple quantum dot is formed within a magnetic field gradient created by a micro-magnet. We oscillate the wave functions of the electrons in the quantum dots by applying microwave voltages and this induces electron spin resonance. The resonance energies of the four quantum dots are slightly different because of the stray field created by the micro-magnet and therefore frequency-resolved addressable control of the electron spin resonance is possible. △ Less

Submitted 8 October, 2015; originally announced October 2015.

Comments: 11 pages, 3 figures

Journal ref: Scientific Reports 6, 31820 (2016)

Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots

Authors: Jun Yoneda, Tomohiro Otsuka, Tatsuki Takakura, Michel Pioro-Ladrière, Roland Brunner, Hong Lu, Takashi Nakajima, Toshiaki Obata, Akito Noiri, Christopher J. Palmstrøm, Arthur C. Gossard, Seigo Tarucha

Abstract: Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a desig… ▽ More Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Journal ref: Appl. Phys. Express 8, 084401 (2015)

Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins

Authors: J. Yoneda, T. Otsuka, T. Nakajima, T. Takakura, T. Obata, M. Pioro-Ladrière, H. Lu, C. Palmstrøm, A. C. Gossard, S. Tarucha

Abstract: We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition… ▽ More We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition, we establish fast z-rotations up to 54 MHz by directly controlling the spin phase. Our findings will significantly facilitate tomography and error correction with electron spins in quantum dots. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Comments: 23 pages, 6 figures

Single-spin manipulation in a double quantum dot in the field of a micromagnet

Authors: Stefano Chesi, Ying-Dan Wang, Jun Yoneda, Tomohiro Otsuka, Seigo Tarucha, Daniel Loss

Abstract: The manipulation of single spins in double quantum dots by making use of the exchange interaction and a highly inhomogeneous magnetic field was discussed in [W. A. Coish and D. Loss, Phys. Rev. B 75, 161302 (2007)]. However, such large inhomogeneity is difficult to achieve through the slanting field of a micromagnet in current designs of lateral double dots. Therefore, we examine an analogous spin… ▽ More The manipulation of single spins in double quantum dots by making use of the exchange interaction and a highly inhomogeneous magnetic field was discussed in [W. A. Coish and D. Loss, Phys. Rev. B 75, 161302 (2007)]. However, such large inhomogeneity is difficult to achieve through the slanting field of a micromagnet in current designs of lateral double dots. Therefore, we examine an analogous spin manipulation scheme directly applicable to realistic GaAs double dot setups. We estimate that typical gate times, realized at the singlet-triplet anticrossing induced by the inhomogeneous micromagnet field, can be a few nanoseconds. We discuss the optimization of initialization, read-out, and single-spin gates through suitable choices of detuning pulses and an improved geometry. We also examine the effect of nuclear dephasing and charge noise. The latter induces fluctuations of both detuning and tunneling amplitude. Our results suggest that this scheme is a promising approach for the realization of fast single-spin operations. △ Less

Submitted 30 December, 2014; v1 submitted 29 May, 2014; originally announced May 2014.

Comments: 13 pages, 11 figures

Journal ref: Phys. Rev. B 90, 235311 (2014)

Full control of quadruple quantum dot circuit charge states in the single electron regime

Authors: M. R. Delbecq, T. Nakajima, T. Otsuka, S. Amaha, J. D. Watson, M. J. Manfra, S. Tarucha

Abstract: We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We… ▽ More We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model. △ Less

Submitted 24 April, 2014; originally announced April 2014.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 104, 183111 (2014)

Single to quadruple quantum dots with tunable tunnel couplings

Authors: Tatsuki Takakura, Akito Noiri, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Katsuharu Yoshida, Seigo Tarucha

Abstract: We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry. For the triple and quadruple dots we study gate-tunable inter-dot tunnel couplings. Particularly for the triple dot we find that the effe… ▽ More We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is governed by gate geometry. For the triple and quadruple dots we study gate-tunable inter-dot tunnel couplings. Particularly for the triple dot we find that the effective tunnel coupling between side dots significantly depends on the alignment of the center dot potential. These results imply that the present quadruple dot device has gate performance relevant for implementing spin-based four-qubit systems with controllable exchange couplings. △ Less

Submitted 9 January, 2014; originally announced January 2014.

Comments: 6 pages, 4 figures

Journal ref: Appl. Phys. Lett. 104, 113109 (2014)

Measurement of energy relaxation in quantum Hall edge states utilizing quantum point contacts

Authors: Tomohiro Otsuka, Yuuki Sugihara, Jun Yoneda, Takashi Nakajima, Seigo Tarucha

Abstract: We demonstrated a method to probe local electronic states and energy relaxation in quantum Hall edge states utilizing quantum point contacts. We evaluated relaxation lengths in two cases; first, with electron tunneling, and second, only with energy exchange without tunneling between edge states. The results were consistent with previous experiments and validated our method with quantum point conta… ▽ More We demonstrated a method to probe local electronic states and energy relaxation in quantum Hall edge states utilizing quantum point contacts. We evaluated relaxation lengths in two cases; first, with electron tunneling, and second, only with energy exchange without tunneling between edge states. The results were consistent with previous experiments and validated our method with quantum point contacts. We applied this method to measure the energy relaxation length around a hotspot in quantum Hall regimes and revealed the possible short-distance relaxation process to be the relaxation due to energy exchange between edge states without electron tunneling. △ Less

Submitted 26 January, 2014; v1 submitted 29 April, 2013; originally announced April 2013.

Comments: 4 pages, 4 figures

Journal ref: J. Phys. Soc. Jpn. 83, 014710 (2014)

Detection of spin polarization utilizing singlet and triplet states in a single-lead quantum dot

Authors: Tomohiro Otsuka, Yuuki Sugihara, Jun Yoneda, Shingo Katsumoto, Seigo Tarucha

Abstract: We propose and demonstrate a new method to probe local spin polarization in semiconductor micro devices at low and zero magnetic fields. By connecting a single-lead quantum dot to a semiconductor micro device and monitoring electron tunneling into singlet and triplet states in the dot, we can detect the local spin polarization formed in the target device. We confirm the validity of this detection… ▽ More We propose and demonstrate a new method to probe local spin polarization in semiconductor micro devices at low and zero magnetic fields. By connecting a single-lead quantum dot to a semiconductor micro device and monitoring electron tunneling into singlet and triplet states in the dot, we can detect the local spin polarization formed in the target device. We confirm the validity of this detection scheme utilizing spin split quantum Hall edge states. We also observe non-zero local spin polarization at the device edge in low magnetic fields, which is not detectable with conventional macroscopic probes. △ Less

Submitted 17 September, 2012; v1 submitted 25 June, 2012; originally announced June 2012.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 86, 081308(R) (2012)

Probing local electronic states in the quantum Hall regime with a side coupled quantum dot

Authors: Tomohiro Otsuka, Eisuke Abe, Yasuhiro Iye, Shingo Katsumoto

Abstract: We demonstrate a new method for locally probing the edge states in the quantum Hall regime utilizing a side coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the edge states into the dot, we acquire information on the local electrochemical potential and electron temperature of the edge states. Furthermore, this method allows us to observe the s… ▽ More We demonstrate a new method for locally probing the edge states in the quantum Hall regime utilizing a side coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the edge states into the dot, we acquire information on the local electrochemical potential and electron temperature of the edge states. Furthermore, this method allows us to observe the spatial modulation of the electrostatic potential at the edge state due to many-body screening effect. △ Less

Submitted 25 March, 2010; v1 submitted 24 December, 2009; originally announced December 2009.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 81, 245302 (2010)

Detection of spin polarization with a side coupled quantum dot

Authors: Tomohiro Otsuka, Eisuke Abe, Yasuhiro Iye, Shingo Katsumoto

Abstract: We propose realistic methods to detect local spin polarization, which utilize a quantum dot side coupled to the target system. By choosing appropriate states in the dot, we can put spin selectivity to the dot and detect spins in the target with small disturbance. We also present an experiment which realizes one of the proposed spin detection schemes in magnetic fields. We propose realistic methods to detect local spin polarization, which utilize a quantum dot side coupled to the target system. By choosing appropriate states in the dot, we can put spin selectivity to the dot and detect spins in the target with small disturbance. We also present an experiment which realizes one of the proposed spin detection schemes in magnetic fields. △ Less

Submitted 1 June, 2009; v1 submitted 25 February, 2009; originally announced February 2009.

Comments: 5 pages, 6 figures

Journal ref: Phys. Rev. B 79, 195313 (2009)

Excited-state spectroscopy on a quantum dot side-coupled to a quantum wire

Authors: Tomohiro Otsuka, Eisuke Abe, Yasuhiro Iye, Shingo Katsumoto

Abstract: We report excited-state spectroscopy on a quantum dot side-coupled to a quantum wire with accurate energy estimation. Our method utilizes periodic voltage pulses on the dot, and the energy calibration is performed with reference to the bias voltage across the wire. We demonstrate the observation of the orbital excited state and the Zeeman splitting in a single dot. We report excited-state spectroscopy on a quantum dot side-coupled to a quantum wire with accurate energy estimation. Our method utilizes periodic voltage pulses on the dot, and the energy calibration is performed with reference to the bias voltage across the wire. We demonstrate the observation of the orbital excited state and the Zeeman splitting in a single dot. △ Less

Submitted 23 July, 2008; originally announced July 2008.

Comments: 3 pages, 4 figures

Journal ref: Appl. Phys. Lett. 93, 112111 (2008)