Showing 1–14 of 14 results for author: Osinsky, A

Anomalous diffusion in polydisperse granular gases: Monte Carlo simulations

Authors: Anna S. Bodrova, Alexander I. Osinsky

Abstract: We perform a direct Monte Carlo simulation of the diffusion in a multicomponent granular medium. We investigate the diffusion coefficients and mean-squared displacements of granular particles in a polydisperse granular gas in a homogeneous cooling state containing an arbitrary number of species of different sizes and masses using both models of constant and time-dependent restitution coefficients.… ▽ More We perform a direct Monte Carlo simulation of the diffusion in a multicomponent granular medium. We investigate the diffusion coefficients and mean-squared displacements of granular particles in a polydisperse granular gas in a homogeneous cooling state containing an arbitrary number of species of different sizes and masses using both models of constant and time-dependent restitution coefficients. In our study, we used a powerful low-rank algorithm that allows for efficient simulation of highly polydisperse granular systems. Mean square displacements in Monte Carlo simulations are in good agreement with theoretical predictions. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Smolchowski-Euler equations

Authors: Alexander Osinsky, Nikolay Brilliantov

Abstract: We derive from the first principles Smoluchowski-Euler equations, describing aggregation kinetics in space-inhomogeneous systems with fluxes. Starting from Boltzmann equations, we obtain microscopic expressions for the aggregation rates for clusters of different size, and observe that they significantly differ from the currently used phenomenological rates. Moreover, we show that for a complete de… ▽ More We derive from the first principles Smoluchowski-Euler equations, describing aggregation kinetics in space-inhomogeneous systems with fluxes. Starting from Boltzmann equations, we obtain microscopic expressions for the aggregation rates for clusters of different size, and observe that they significantly differ from the currently used phenomenological rates. Moreover, we show that for a complete description of aggregating systems, novel kinetic coefficients are needed. These may be called ``flux-reaction'' and ``energy-reaction'' rates, as they appear, respectively, in the equations for fluxes and energy. We report microscopic expressions for these coefficients. We solve numerically the Smoluchowski-Euler equations for two representative examples -- aggregation of particles at sedimentation, and aggregation after an explosion. The solution of the novel equations is compared with the solution of currently used phenomenological equations, with phenomenological rate coefficients. We find a noticeable difference between these solutions, which manifests unreliability of the phenomenological approach and the need of application of new, first-principle equations. △ Less

Submitted 5 December, 2023; originally announced December 2023.

Comments: Submitted to Physical Review Letters

Low-rank Monte Carlo for Smoluchowski-class equations

Authors: Alexander Osinsky

Abstract: The work discusses a new low-rank Monte Carlo technique to solve Smoluchowski-like kinetic equations. It drastically decreases the computational complexity of modeling of size-polydisperse systems. For the studied systems it can outperform the existing methods by more than ten times; its superiority further grows with increasing system size. Application to the recently developed temperature-depend… ▽ More The work discusses a new low-rank Monte Carlo technique to solve Smoluchowski-like kinetic equations. It drastically decreases the computational complexity of modeling of size-polydisperse systems. For the studied systems it can outperform the existing methods by more than ten times; its superiority further grows with increasing system size. Application to the recently developed temperature-dependent Smoluchowski equations is also demonstrated. △ Less

Submitted 5 December, 2023; originally announced December 2023.

Comments: Submitted to Journal of Computational Physics

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Authors: Jiarui Gong, Jie Zhou, Ashok Dheenan, Moheb Sheikhi, Fikadu Alema, Tien Khee Ng, Shubhra S. Pasayat, Qiaoqiang Gan, Andrei Osinsky, Vincent Gambin, Chirag Gupta, Siddharth Rajan, Boon S. Ooi, Zhenqiang Ma

Abstract: Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi… ▽ More Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Comments: 18 pages, 5 figures

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Authors: Jiarui Gong, Donghyeok Kim, Hokyung Jang, Fikadu Alema, Qingxiao Wang, Tien Khee Ng, Shuoyang Qiu, Jie Zhou, Xin Su, Qinchen Lin, Ranveer Singh, Haris Abbasi, Kelson Chabak, Gregg Jessen, Clincy Cheung, Vincent Gambin, Shubhra S. Pasayat, Andrei Osinsky, Boon, S. Ooi, Chirag Gupta, Zhenqiang Ma

Abstract: The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se… ▽ More The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: 32 pages, 10 figures. The preliminary data were presented as a poster in the 5th US Gallium Oxide Workshop, Washington, DC. August 07-10, 2022

Exact solutions of temperature-dependent Smoluchowski equations

Authors: Alexander Osinsky, Nikolay Brilliantov

Abstract: We report a number of exact solutions for temperature-dependent Smoluchowski equations. These equations quantify the ballistic agglomeration, where the evolution of densities of agglomerates of different size is entangled with the evolution of the mean kinetic energy (partial temperatures) of such clusters. The obtained exact solutions may be used as a benchmark to assess the accuracy and computat… ▽ More We report a number of exact solutions for temperature-dependent Smoluchowski equations. These equations quantify the ballistic agglomeration, where the evolution of densities of agglomerates of different size is entangled with the evolution of the mean kinetic energy (partial temperatures) of such clusters. The obtained exact solutions may be used as a benchmark to assess the accuracy and computational efficiency of the numerical approaches, developed to solve the temperature-dependent Smoluchowski equations. Moreover, they may also illustrate the possible evolution regimes in these systems. The exact solutions have been obtained for a series of model rate coefficients, and we demonstrate that there may be an infinite number of such model coefficient which allow exact analysis. We compare our exact solutions with the numerical solutions for various evolution regimes; an excellent agreement between numerical and exact results proves the accuracy of the exploited numerical method. △ Less

Submitted 9 October, 2022; originally announced October 2022.

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films

Authors: Fikadu Alema, Carl Peterson, Arkka Bhattacharyya, Saurav Roy, Sriram Krishnamoorthy, Andrei Osinsky

Abstract: We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and t… ▽ More We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Collision fragmentation of aggregates. The role of the interaction potential between comprising particles

Authors: Alexander Osinsky, Nikolai Brilliantov

Abstract: We investigate disruptive collisions of aggregates comprised of particles with different interaction potentials. We study Lennard-Jones (L-J), Tersoff, modified L-J potential and the one associated with Johnson-Kendall-Roberts (JKR) model. These refer to short, middle and long-ranged inter-particle potentials and describe both inter-atomic interactions and interactions of macroscopic adhesive bodi… ▽ More We investigate disruptive collisions of aggregates comprised of particles with different interaction potentials. We study Lennard-Jones (L-J), Tersoff, modified L-J potential and the one associated with Johnson-Kendall-Roberts (JKR) model. These refer to short, middle and long-ranged inter-particle potentials and describe both inter-atomic interactions and interactions of macroscopic adhesive bodies. We perform comprehensive molecular dynamics simulations and observe for all four potentials power-law dependencies for the size distribution of collision fragments and for their size-velocity correlation. We introduce a new fragmentation characteristic -- the shattering degree $S$, quantifying the fraction of monomers in debris and reveal its universal behavior. Namely, we demonstrate that for all potentials, $1-S$ is described by a universal function of the impact velocity. Using the above results, we perform the impact classification and construct the respective collision phase diagram. Finally, we present a qualitative theory that explains the observed scaling behavior. △ Less

Submitted 30 October, 2021; v1 submitted 13 October, 2021; originally announced October 2021.

Comments: Submitted to Physica A

Journal ref: Physica A: Statistical Mechanics and its Applications 603, 4 (2022)127785

Anomalous aggregation regimes of temperature-dependent Smoluchowski equations

Authors: A. I. Osinsky, N. V. Brilliantov

Abstract: Temperature-dependent Smoluchowski equations describe the ballistic agglomeration. In contrast to the standard Smoluchowski equations for the evolution of cluster densities with constant rate coefficients, the temperature-dependent equations describe both -- the evolution of the densities as well as cluster temperatures, which determine the aggregation rates. To solve these equations, we develop a… ▽ More Temperature-dependent Smoluchowski equations describe the ballistic agglomeration. In contrast to the standard Smoluchowski equations for the evolution of cluster densities with constant rate coefficients, the temperature-dependent equations describe both -- the evolution of the densities as well as cluster temperatures, which determine the aggregation rates. To solve these equations, we develop a novel Monte Carlo technique based on the low-rank approximation for the aggregation kernel. Using this highly effective approach, we perform a comprehensive study of the phase diagram of the system and reveal a few surprising regimes, including permanent temperature growth and "density separation", with a large gap in the size distribution for middle-size clusters. We perform classification of the aggregation kernels for the temperature-dependent equations and conjecture the lack of gelation. The results of our scaling analysis agree well with the simulation data. △ Less

Submitted 1 October, 2021; originally announced October 2021.

Comments: Submitted to Physical Review E

Journal ref: Phys.Rev.E. 105 (2022) 034119

Direct simulation Monte Carlo for new regimes in aggregation-fragmentation kinetics

Authors: A. Kalinov, A. I. Osinsky, S. A. Matveev, W. Otieno, N. V. Brilliantov

Abstract: We revisit two basic Direct Simulation Monte Carlo Methods to model aggregation kinetics and extend them for aggregation processes with collisional fragmentation (shattering). We test the performance and accuracy of the extended methods and compare their performance with efficient deterministic finite-difference method applied to the same model. We validate the stochastic methods on the test probl… ▽ More We revisit two basic Direct Simulation Monte Carlo Methods to model aggregation kinetics and extend them for aggregation processes with collisional fragmentation (shattering). We test the performance and accuracy of the extended methods and compare their performance with efficient deterministic finite-difference method applied to the same model. We validate the stochastic methods on the test problems and apply them to verify the existence of oscillating regimes in the aggregation-fragmentation kinetics recently detected in deterministic simulations. We confirm the emergence of steady oscillations of densities in such systems and prove the stability of the oscillations with respect to fluctuations and noise. △ Less

Submitted 25 April, 2021; v1 submitted 17 March, 2021; originally announced March 2021.

Comments: 19 pages, 2 figures, 4 tables

MSC Class: 82M31; 65L07; 65L99 ACM Class: G.1.7; G.1.10; G.1.2; I.6; F.2.1

The role of energy in ballistic agglomeration

Authors: N. V. Brilliantov, A. I. Osinsky, P. L. Krapivsky

Abstract: We study a ballistic agglomeration process in the reaction-controlled limit. Cluster densities obey an infinite set of Smoluchowski rate equations, with rates dependent on the average particle energy. The latter is the same for all cluster species in the reaction-controlled limit and obeys an equation depending on densities. We express the average energy through the total cluster density that allo… ▽ More We study a ballistic agglomeration process in the reaction-controlled limit. Cluster densities obey an infinite set of Smoluchowski rate equations, with rates dependent on the average particle energy. The latter is the same for all cluster species in the reaction-controlled limit and obeys an equation depending on densities. We express the average energy through the total cluster density that allows us to reduce the governing equations to the standard Smoluchowski equations. We derive basic asymptotic behaviors and verify them numerically. We also apply our formalism to the agglomeration of dark matter. △ Less

Submitted 2 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. E 102, 042909 (2020)

Size-polydisperse dust in molecular gas: Energy equipartition versus non-equipartition

Authors: Alexander Osinsky, Anna S. Bodrova, Nikolai V. Brilliantov

Abstract: We investigate numerically and analytically size-polydisperse granular mixtures immersed into a molecular gas. We show that the equipartition of granular temperatures of particles of different sizes is established; however, the granular temperatures significantly differ from the temperature of the molecular gas. This result is surprising since, generally, the energy equipartition is strongly viola… ▽ More We investigate numerically and analytically size-polydisperse granular mixtures immersed into a molecular gas. We show that the equipartition of granular temperatures of particles of different sizes is established; however, the granular temperatures significantly differ from the temperature of the molecular gas. This result is surprising since, generally, the energy equipartition is strongly violated in driven granular mixtures. Qualitatively, the obtained results do not depend on the collision model, being valid for a constant restitution coefficient $\varepsilon$, as well as for the $\varepsilon$ for viscoelastic particles. Our findings may be important for astrophysical applications, such as protoplanetary disks, interstellar dust clouds, and comets. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Temperature distribution in driven granular mixtures does not depend on mechanism of energy dissipation

Authors: Anna S. Bodrova, Alexander Osinsky, Nikolay Brilliantov

Abstract: We study analytically and numerically the distribution of granular temperatures in granular mixtures for different dissipation mechanisms of inelastic inter-particle collisions. Both driven and force-free systems are analyzed. We demonstrate that the simplified model of a constant restitution coefficient fails to predict even qualitatively a granular temperature distribution in a homogeneous cooli… ▽ More We study analytically and numerically the distribution of granular temperatures in granular mixtures for different dissipation mechanisms of inelastic inter-particle collisions. Both driven and force-free systems are analyzed. We demonstrate that the simplified model of a constant restitution coefficient fails to predict even qualitatively a granular temperature distribution in a homogeneous cooling state. At the same time we reveal for driven systems a stunning result -- the distribution of temperatures in granular mixtures is universal. That is, it does not depend on a particular dissipation mechanism of inter-particles collisions, provided the size distributions of particles is steep enough. The results of the analytic theory are compared with simulation results obtained by the direct simulation Monte Carlo (DSMC). The agreement between the theory and simulations is perfect. The reported results may have important consequences for fundamental science as well as for numerous application, e.g. for the experimental modelling in a lab of natural processes. △ Less

Submitted 12 November, 2019; originally announced November 2019.

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

Authors: David A. Deen, Ross Miller, Andrei Osinsky, Brian P. Downey, David F. Storm, David J. Meyer, D. Scott Katzer, Neeraj Nepal

Abstract: A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel… ▽ More A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance. △ Less

Submitted 12 October, 2016; originally announced October 2016.

Comments: 30 pages (pre-print), 13 figures. arXiv admin note: text overlap with arXiv:1508.07794