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Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe$_2$
Authors:
K. Oreszczuk,
A. Rodek,
M. Goryca,
T. Kazimierczuk,
M. Raczynski,
J. Howarth,
T. Taniguchi,
K. Watanabe,
M. Potemski,
P. Kossacki
Abstract:
Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of electron-electron interactions on the 2DEG magnetic susceptibility is found to be particularly strong in the limit of, studied in detail, low carrier densities. Following the…
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Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of electron-electron interactions on the 2DEG magnetic susceptibility is found to be particularly strong in the limit of, studied in detail, low carrier densities. Following the existing models, we derive the value of $g_0 = 2.5 \pm 0.4$ for the bare (in the absence of the interaction effects) $g$-factor of the ground state electronic band in the MoSe$_2$ monolayer. The derived value of this parameter is discussed in the context of estimations from other experimental approaches. Surprisingly, the conclusions drawn differ from theoretical ab-initio studies.
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Submitted 22 July, 2023; v1 submitted 2 May, 2023;
originally announced May 2023.
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Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides
Authors:
K. Oreszczuk,
J. Slawinska,
A. Rodek,
M. Potemski,
C. Skierbiszewski,
P. Kossacki
Abstract:
We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to ac…
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We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.
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Submitted 26 June, 2022; v1 submitted 8 June, 2022;
originally announced June 2022.
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Excitonic complexes in $n$-doped WS$_2$ monolayer
Authors:
M. Zinkiewicz,
T. Woźniak,
T. Kazimierczuk,
P. Kapuściński,
K. Oreszczuk,
M. Grzeszczyk,
M. Bartos,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bri…
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We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically-inactive complexes. The semi-dark trions and negative biexcitons are distinguished. Based on their experimentally extracted and theoretically calculated $g$-factors, we identify three distinct families of emissions due to exciton complexes in WS$_2$: bright, intravalley and intervalley dark. The $g$-factors of the spin-split subbands in both the conduction and valence bands are also determined.
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Submitted 21 December, 2020;
originally announced December 2020.
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Neutral and charged dark excitons in monolayer WS$_2$
Authors:
M. Zinkiewicz,
A. O. Slobodeniuk,
T. Kazimierczuk,
P. Kapuściński,
K. Oreszczuk,
M. Grzeszczyk,
M. Bartos,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange…
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Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange interaction coupled neutral dark and grey excitons through their polarization properties, while an analogous effect is not observed for dark trions. Applying the magnetic field in both perpendicular and parallel configurations with respect to the monolayer plane, we determine the g-factor of dark trions to be $g\sim$-8.6. Their decay rate is close to 0.5 ns, more than 2 orders of magnitude longer than that of bright excitons.
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Submitted 28 May, 2020;
originally announced May 2020.
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Temperature dependence of photoluminescence lifetime of atomically thin WSe2 layer
Authors:
Aleksandra Łopion,
Mateusz Goryca,
Tomasz Smoleński,
Kacper Oreszczuk,
Karol Nogajewski,
Maciej R. Molas,
Marek Potemski,
Piotr Kossacki
Abstract:
At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing temperature. In order to understand the mechanism behind this phenomenon, we carried out a time-resolved experiment, which revealed a similar trend in the photoluminescenc…
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At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing temperature. In order to understand the mechanism behind this phenomenon, we carried out a time-resolved experiment, which revealed a similar trend in the photoluminescence decay time. Our results identify the opening of additional nonradiative relaxation channels as a primary cause of the observed temperature quenching of the localized excitons' photoluminescence.
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Submitted 5 December, 2019;
originally announced December 2019.
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Probing and manipulating valley coherence of dark excitons in monolayer WSe$_2$
Authors:
M. R. Molas,
A. O. Slobodeniuk,
T. Kazimierczuk,
K. Nogajewski,
M. Bartos,
P. Kapuściński,
K. Oreszczuk,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
D. M. Basko,
M. Potemski
Abstract:
Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-split subbands in the valence and conduction bands makes the lowest-lying excitons in WX$_2$ (X~being S…
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Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-split subbands in the valence and conduction bands makes the lowest-lying excitons in WX$_2$ (X~being S or Se) spin-forbidden and optically dark. With polarization-resolved photoluminescence experiments performed on a WSe$_2$ monolayer encapsulated in a hexagonal boron nitride, we show how the intrinsic exchange interaction in combination with the applied in-plane and/or out-of-plane magnetic fields enables one to probe and manipulate the valley degree of freedom of the dark excitons.
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Submitted 10 June, 2019; v1 submitted 14 January, 2019;
originally announced January 2019.
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Origin of luminescence quenching in structures containing CdSe/ZnSe quantum dots with a few Mn$^{2+}$ ions
Authors:
Kacper Oreszczuk,
Mateusz Goryca,
Wojciech Pacuski,
Tomasz Smoleński,
Michał Nawrocki,
Piotr Kossacki
Abstract:
We present a detailed spectroscopic study of the photoluminescence quenching in an epitaxial structures containing CdSe/ZnSe quantum dots doped with low concentration of Mn$^{2+}$ ions. Our time-resolved and time-integrated experiments reveal the origin of the quenching observed in macro-photoluminescence studies of ensembles of such dots. We show that incorporation of even a few ions to an indivi…
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We present a detailed spectroscopic study of the photoluminescence quenching in an epitaxial structures containing CdSe/ZnSe quantum dots doped with low concentration of Mn$^{2+}$ ions. Our time-resolved and time-integrated experiments reveal the origin of the quenching observed in macro-photoluminescence studies of ensembles of such dots. We show that incorporation of even a few ions to an individual dot does not quench its luminescence effectively, although some fingerprints of expected spin-dependent quenching are visible. At the same time, the presence of Mn$^{2+}$ ions in the sample significantly affects the luminescence intensity of the wetting layer, resulting in a quenching of the global luminescence from studied structure. On the other hand, the luminescence decay dynamics is found to be independent of the presence of Mn$^{2+}$ ions, which suggests that the observed quenching occurs for the excited excitonic states.
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Submitted 9 November, 2017; v1 submitted 22 February, 2017;
originally announced February 2017.
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Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots
Authors:
J. Kobak,
T. Smoleński,
M. Goryca,
J. -G. Rousset,
W. Pacuski,
A. Bogucki,
K. Oreszczuk,
P. Kossacki,
M. Nawrocki,
A. Golnik,
J. Płachta,
P. Wojnar,
C. Kruse,
D. Hommel,
M. Potemski,
T. Kazimierczuk
Abstract:
We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to det…
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We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71); diamagnetic shift $γ=$2.5 $μ$eV$/$T$^{2}$ ($γ=$1.3 $μ$eV$/$T$^{2}$). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.
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Submitted 19 February, 2016;
originally announced February 2016.
