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Topological bound on structure factor
Authors:
Yugo Onishi,
Liang Fu
Abstract:
We show that the static structure factor of general many-body systems with $U(1)$ symmetry has a lower bound determined only by the ground state Chern number. Our bound relies only on causality and non-negative energy dissipation, and holds for a wide range of systems. We apply our theory to (fractional) Chern insulators, (fractional) quantum spin Hall insulators, topological superconductors, and…
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We show that the static structure factor of general many-body systems with $U(1)$ symmetry has a lower bound determined only by the ground state Chern number. Our bound relies only on causality and non-negative energy dissipation, and holds for a wide range of systems. We apply our theory to (fractional) Chern insulators, (fractional) quantum spin Hall insulators, topological superconductors, and chiral spin liquids. Our results uncover a universal feature of topological phases beyond the quantized response.
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Submitted 26 June, 2024;
originally announced June 2024.
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An antiferromagnetic diode effect in even-layered MnBi2Te4
Authors:
Anyuan Gao,
Shao-Wen Chen,
Barun Ghosh,
Jian-Xiang Qiu,
Yu-Fei Liu,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Damien Bérubé,
Thao Dinh,
Houchen Li,
Christian Tzschaschel,
Seunghyun Park,
Tianye Huang,
Shang-Wei Lien,
Zhe Sun,
Sheng-Chin Ho,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Arun Bansil,
Hsin Lin,
Tay-Rong Chang,
Amir Yacoby
, et al. (4 additional authors not shown)
Abstract:
In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu…
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In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.
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Submitted 24 June, 2024;
originally announced June 2024.
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Quantum weight
Authors:
Yugo Onishi,
Liang Fu
Abstract:
We introduce the concept of quantum weight as a fundamental property of quantum many-body systems that is encoded in the ground-state static structure factor and characterizes density fluctuation at long wavelength. We show that quantum weight of three-dimensional electron systems is related by a sum rule to the inverse dielectric function, which describes electron energy loss spectrum. Using this…
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We introduce the concept of quantum weight as a fundamental property of quantum many-body systems that is encoded in the ground-state static structure factor and characterizes density fluctuation at long wavelength. We show that quantum weight of three-dimensional electron systems is related by a sum rule to the inverse dielectric function, which describes electron energy loss spectrum. Using this relation, we derive an upper and a lower bound on the quantum weight of real materials in terms of their electron density, static dielectric constant, and plasmon energy. For systems with short-range interactions or Coulomb systems in reduced dimensions, we derive a sum rule relating the quantum weight to the optical conductivity and establish a remarkable connection with the quantum geometry of many-body ground states. Our work highlights quantum weight as a key material parameter that can be experimentally determined.
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Submitted 5 June, 2024;
originally announced June 2024.
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Quantum weight
Authors:
Yugo Onishi,
Liang Fu
Abstract:
We introduce the concept of quantum weight as a fundamental property of insulating states of matter that is encoded in the ground-state static structure and measures quantum fluctuation in electrons' center of mass. We find a sum rule that directly relates quantum weight -- a ground state property -- with the negative-first moment of the optical conductivity above the gap frequency. Building on th…
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We introduce the concept of quantum weight as a fundamental property of insulating states of matter that is encoded in the ground-state static structure and measures quantum fluctuation in electrons' center of mass. We find a sum rule that directly relates quantum weight -- a ground state property -- with the negative-first moment of the optical conductivity above the gap frequency. Building on this connection to optical absorption, we derive both an upper bound and a lower bound on quantum weight in terms of electron density, dielectric constant, and energy gap. Therefore, quantum weight constitutes a key material parameter that can be experimentally determined from X-ray scattering.
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Submitted 24 January, 2024;
originally announced January 2024.
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Probing quantum geometry through optical conductivity and magnetic circular dichroism
Authors:
Barun Ghosh,
Yugo Onishi,
Su-Yang Xu,
Hsin Lin,
Liang Fu,
Arun Bansil
Abstract:
Probing ground-state quantum geometry and topology through optical response is not only of fundamental interest, but it can also offer several practical advantages. Here, using first-principles calculations on antiferromagnetic topological insulator MnBi$_2$Te$_4$ thin films, we demonstrate how the generalized optical weight arising from the absorptive part of the optical conductivity can be used…
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Probing ground-state quantum geometry and topology through optical response is not only of fundamental interest, but it can also offer several practical advantages. Here, using first-principles calculations on antiferromagnetic topological insulator MnBi$_2$Te$_4$ thin films, we demonstrate how the generalized optical weight arising from the absorptive part of the optical conductivity can be used to probe the ground state quantum geometry and topology. We show that three septuple layers MnBi$_2$Te$_4$ exhibit an enhanced almost perfect magnetic circular dichroism for a narrow photon energy window in the infrared region. We calculate the quantum weight in a few septuple layers MnBi$_2$Te$_4$ and show that it far exceeds the lower bound provided by the Chern number. Our results suggest that the well-known optical methods are powerful tools for probing the ground state quantum geometry and topology.
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Submitted 17 January, 2024;
originally announced January 2024.
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Universal relation between energy gap and dielectric constant
Authors:
Yugo Onishi,
Liang Fu
Abstract:
We establish a universal relation between the energy gap and the static dielectric constant for all insulating states. This relation yields an upper bound on the energy gap, which only depends on the electron density and electronic dielectric constant. We identify two types of energy gaps associated with transverse and longitudinal excitations at long wavelength, which correspond to the optical ga…
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We establish a universal relation between the energy gap and the static dielectric constant for all insulating states. This relation yields an upper bound on the energy gap, which only depends on the electron density and electronic dielectric constant. We identify two types of energy gaps associated with transverse and longitudinal excitations at long wavelength, which correspond to the optical gap and the plasmon energy respectively. Their upper bounds are set by the dielectric constant and its inverse respectively. The transverse gap bound is calculated for a wide range of materials and compared with the measured optical gap. A remarkable case is cubic boron nitride, in which the direct gap reaches \SI{72}{\percent} of the bound.
Our results are derived from the Kramers-Kronig relation and the $f$-sum rule, and therefore rest on general physical principles.
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Submitted 14 May, 2024; v1 submitted 8 January, 2024;
originally announced January 2024.
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Spin current relaxation time in thermally evaporated naphthyl diamine derivative films
Authors:
Eiji Shikoh,
Yuichiro Onishi,
Yoshio Teki
Abstract:
The spin relaxation time (tau) on the spin transport in thermally evaporated thin films of a naphthyl diamine derivative: N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)-2,2'-dimethylbenzidine (a-NPD) was evaluated with the spin-pump-induced spin transport properties and the electrical current-voltage properties in a-NPD films. The zero-bias mobility and the diffusion constant of charges in a-NPD fil…
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The spin relaxation time (tau) on the spin transport in thermally evaporated thin films of a naphthyl diamine derivative: N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)-2,2'-dimethylbenzidine (a-NPD) was evaluated with the spin-pump-induced spin transport properties and the electrical current-voltage properties in a-NPD films. The zero-bias mobility and the diffusion constant of charges in a-NPD films were obtained to be about 1.2*10-3 cm2/Vs and about 3.0*10-5 cm2/s, respectively. Using these values and the previously evaluated spin diffusion length in a-NPD films of about 62 nm, the tau in a-NPD films was estimated to be about 1.9 micro-second at room temperature, under an assumption of diffusive transport of the spin current in a-NPD films. This estimated tau in a-NPD films is long enough for practical use as a spintronic molecular material.
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Submitted 21 November, 2023;
originally announced November 2023.
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Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
Authors:
Anyuan Gao,
Yu-Fei Liu,
Jian-Xiang Qiu,
Barun Ghosh,
Thaís V. Trevisan,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Hung-Ju Tien,
Shao-Wen Chen,
Mengqi Huang,
Damien Bérubé,
Houchen Li,
Christian Tzschaschel,
Thao Dinh,
Zhe Sun,
Sheng-Chin Ho,
Shang-Wei Lien,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Hsin Lin,
Tay-Rong Chang,
Chunhui Rita Du
, et al. (6 additional authors not shown)
Abstract:
Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferroma…
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Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics.
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Submitted 23 July, 2023; v1 submitted 15 June, 2023;
originally announced June 2023.
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Fundamental bound on topological gap
Authors:
Yugo Onishi,
Liang Fu
Abstract:
We provide a universal tight bound on the energy gap of topological insulators by exploring relationships between topology, quantum geometry, and optical absorption. Applications of our theory to infrared absorption near topological band inversion, magnetic circular dichorism in Chern insulators, and topological gap in moiré materials are demonstrated.
We provide a universal tight bound on the energy gap of topological insulators by exploring relationships between topology, quantum geometry, and optical absorption. Applications of our theory to infrared absorption near topological band inversion, magnetic circular dichorism in Chern insulators, and topological gap in moiré materials are demonstrated.
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Submitted 24 October, 2023; v1 submitted 31 May, 2023;
originally announced June 2023.
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Colossal nonreciprocal Hall effect and broadband frequency mixing due to a room temperature nonlinear Hall effect
Authors:
Lu** Min,
Yang Zhang,
Zhijian Xie,
Sai Venkata Gayathri Ayyagari,
Leixin Miao,
Yugo Onishi,
Seng Huat Lee,
Yu Wang,
Nasim Alem,
Liang Fu,
Zhiqiang Mao
Abstract:
Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many prospective applications such as rectification and photodetection over a wide range of frequencies. The NR transport reported to date occurs along the longitudinal direction with the NR resistance limited to a few percent…
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Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many prospective applications such as rectification and photodetection over a wide range of frequencies. The NR transport reported to date occurs along the longitudinal direction with the NR resistance limited to a few percent of the ohmic resistance. Here we report a transverse nonreciprocal transport phenomenon with divergent nonreciprocity - colossal NR Hall effect. This is revealed in direct current (DC) measurements on the microscale Hall devices made of the Pt wires deposited by focused ion beam (FIB) on Si substrates and the Weyl semimetal NbP with FIB-deposited Pt electrodes at 0 magnetic field. When a DC is applied along the x-axis of the devices Ix, it generates a voltage along the y-axis Vy near room temperature, with Vy quadratically scaling with Ix. The transverse resistance, which shows a sign reversal upon switching the current direction, results from a colossal extrinsic nonlinear Hall effect (NLHE) rooted in the disorder scatterings in the Pt wires. While NbP was not found to show NLHE, the NLHE generated in the Pt electrodes can be transmitted to the NbP Hall devices, which yields a surprisingly large nonlinear anomalous Hall effect in NbP with the Hall angle (${Θ_H}$) far exceeding the record value of the anomalous Hall angle of magnetic conductors at room temperature. Furthermore, we find such a strong NLHE can lead to broadband frequency mixing, with the frequency spectrum of the Hall voltage including 2nd-harmonic generation, sum & difference frequency generations, and other multiple wave mixing components. These results not only demonstrate the concept of the NRHE for the first time but also pave the way for exploring NLHE's applications in Thz communication, imaging, and energy harvesting.
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Submitted 29 August, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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High-efficiency energy harvesting based on nonlinear Hall rectifier
Authors:
Yugo Onishi,
Liang Fu
Abstract:
Noncentrosymmetric quantum materials can convert AC input current into DC transverse current through the nonlinear Hall effect at zero magnetic field. We analyze the AC-DC power conversion efficiency of such ``Hall rectifier'' and suggest its application in wireless charging and energy harvesting. Our key observation is that the development of Hall voltage results in a change of longitudinal resis…
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Noncentrosymmetric quantum materials can convert AC input current into DC transverse current through the nonlinear Hall effect at zero magnetic field. We analyze the AC-DC power conversion efficiency of such ``Hall rectifier'' and suggest its application in wireless charging and energy harvesting. Our key observation is that the development of Hall voltage results in a change of longitudinal resistance, resulting in a violation of Ohm's law due to the nonlinear Hall effect. This feedback mechanism balances the input power and the output power and hence is crucial to understanding the power transfer from source to load. We derive a general expression for the power conversion efficiency in terms of material parameters, external load resistance, and input power. As the Hall current is perpendicular to the electric field and does not generate Joule heating by itself, we obtain high power conversion efficiency when the Hall angle (which increases with the input power) is large and the load resistance is optimized. Promising materials for high-efficiency Hall rectifiers are also discussed.
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Submitted 31 July, 2023; v1 submitted 30 November, 2022;
originally announced November 2022.
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Spin transport properties in a naphthyl diamine derivative film investigated by the spin pum**
Authors:
Yuichiro Onishi,
Yoshio Teki,
Eiji Shikoh
Abstract:
We report the spin transport properties in a thin film of a naphthyl diamine derivative: N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine (alpha-NPD). In a palladium(Pd)/alpha-NPD/Ni80Fe20 tri-layer structure sample, a pure spin current is generated in the alpha-NPD layer with the spin pum** driven by ferromagnetic resonance (FMR). The generated spin current is absorbed into the…
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We report the spin transport properties in a thin film of a naphthyl diamine derivative: N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine (alpha-NPD). In a palladium(Pd)/alpha-NPD/Ni80Fe20 tri-layer structure sample, a pure spin current is generated in the alpha-NPD layer with the spin pum** driven by ferromagnetic resonance (FMR). The generated spin current is absorbed into the Pd layer, and converted into a charge current with the inverse spin-Hall effect (ISHE) in Pd. An electromotive force due to the ISHE in the Pd layer is observed under the FMR of the Ni80Fe20 layer, which is clear evidence for the spin transport in an alpha-NPD film. The spin diffusion length in an alpha-NPD film is estimated to be about 62 nm at room temperature, which is long enough as a spin transport material for spintronic devices.
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Submitted 8 December, 2022; v1 submitted 30 July, 2022;
originally announced August 2022.
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Effects of relaxation on photovoltaic effect and possibility of photocurrent within transparent region
Authors:
Yugo Onishi,
Hikaru Watanabe,
Takahiro Morimoto,
Naoto Nagaosa
Abstract:
We theoretically study photocurrents in metals that break both inversion $\mathcal{P}$ and $\mathcal{T}$ symmetries within the transparent region. We find that the system under the ac electric fields is well described with an effective Hamiltonian and the photocurrent is of the order of $\mathcal{O}(ω_J/γ)$ if the frequency of the induced current $ω_J$ and the scattering rate $γ$ satisfy…
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We theoretically study photocurrents in metals that break both inversion $\mathcal{P}$ and $\mathcal{T}$ symmetries within the transparent region. We find that the system under the ac electric fields is well described with an effective Hamiltonian and the photocurrent is of the order of $\mathcal{O}(ω_J/γ)$ if the frequency of the induced current $ω_J$ and the scattering rate $γ$ satisfy $ω_J/γ\ll 1$, and vanishes in the limit of $ω_J/γ\to 0$. On the other hand, the effective Hamiltonian description indicates that nonvanishing photocurrent can appear even in the transparent region if the system is thin enough compared to the mean free path in the direction of the induced current (where $γ$ can be effectively regarded as 0). Candidate materials for the such photovoltaic effect within the transparent region include multiferroics breaking both $\mathcal{P}$ and $\mathcal{T}$ symmetries.
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Submitted 18 September, 2022; v1 submitted 27 April, 2022;
originally announced April 2022.
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Pure nematic quantum critical point accompanied by a superconducting dome
Authors:
K. Ishida,
Y. Onishi,
M. Tsujii,
K. Mukasa,
M. Qiu,
M. Saito,
Y. Sugimura,
K. Matsuura,
Y. Mizukami,
K. Hashimoto,
T. Shibauchi
Abstract:
When a symmetry-breaking phase of matter is suppressed to a quantum critical point (QCP) at absolute zero, quantum-mechanical fluctuations proliferate. Such fluctuations can lead to unconventional superconductivity, as evidenced by the superconducting domes often found near magnetic QCPs in correlated materials. However, it remains unclear whether this superconductivity mechanism holds for QCPs of…
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When a symmetry-breaking phase of matter is suppressed to a quantum critical point (QCP) at absolute zero, quantum-mechanical fluctuations proliferate. Such fluctuations can lead to unconventional superconductivity, as evidenced by the superconducting domes often found near magnetic QCPs in correlated materials. However, it remains unclear whether this superconductivity mechanism holds for QCPs of the electronic nematic phase, characterized by rotational symmetry breaking. Here, we demonstrate from systematic elastoresistivity measurements that nonmagnetic FeSe$_{1-x}$Te$_{x}$ exhibits an electronic nematic QCP showing diverging nematic susceptibility. This finding establishes two nematic QCPs in FeSe-based superconductors with contrasting accompanying phase diagrams. In FeSe$_{1-x}$Te$_{x}$, a superconducting dome is centered at the QCP, whereas FeSe$_{1-x}$S$_{x}$ shows no QCP-associated enhancement of superconductivity. We find that this difference is related to the relative strength of nematic and spin fluctuations. Our results in FeSe$_{1-x}$Te$_{x}$ present the first case in support of the superconducting dome being associated with the pure nematic QCP.
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Submitted 23 February, 2022;
originally announced February 2022.
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Theory of shift heat current and its application to electron-phonon coupled systems
Authors:
Yugo Onishi,
Takahiro Morimoto,
Naoto Nagaosa
Abstract:
We propose a heat current analog of the shift current, "shift heat current". We study nonlinear heat current responses to an applied ac electric field by a diagrammatic method and derive a microscopic expression for the second order dc heat current response. As a result, we find that the shift heat current is related to the shift vector, a geometric quantity that also appears in the expression for…
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We propose a heat current analog of the shift current, "shift heat current". We study nonlinear heat current responses to an applied ac electric field by a diagrammatic method and derive a microscopic expression for the second order dc heat current response. As a result, we find that the shift heat current is related to the shift vector, a geometric quantity that also appears in the expression for the shift current. The shift heat current directly depends on and can be controlled through the chemical potential. In addition, we apply the diagrammatic method to electron-phonon coupled systems, and we find that even if only the phonons are excited by an external field, the amplitude of the shift heat current is determined by the energy scale of electrons, not of phonons.
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Submitted 13 July, 2022; v1 submitted 7 January, 2022;
originally announced January 2022.
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Theory of Seebeck ratchet in noncentrosymmetric electron-phonon coupled system
Authors:
Yugo Onishi,
Hiroki Isobe,
Naoto Nagaosa
Abstract:
A thermoelectric effect of the noncentrosymmetric electron-phonon coupled system is proposed, in which a temperature difference between electrons and phonons, instead of a spatial temperature gradient, induces an electric current. This is a realization of Seebeck ratchet in solids with the asymmetric energy dispersion of electrons, and the dynamical phonons act as the fluctuation of the scalar pot…
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A thermoelectric effect of the noncentrosymmetric electron-phonon coupled system is proposed, in which a temperature difference between electrons and phonons, instead of a spatial temperature gradient, induces an electric current. This is a realization of Seebeck ratchet in solids with the asymmetric energy dispersion of electrons, and the dynamical phonons act as the fluctuation of the scalar potential and induce the dc current. Possible realizations of this mechanism are also discussed.
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Submitted 15 September, 2021; v1 submitted 17 June, 2021;
originally announced June 2021.
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Theory of thermoelectric effect in insulators
Authors:
Yugo Onishi,
Hiroki Isobe,
Naoto Nagaosa
Abstract:
We propose a thermopolarization effect with a purely electronic origin, where the electric polarization $P$ is induced by the temperature gradient $\nabla T$. This is observable as a Seebeck effect in a finite-size system where the linear size $L$ is shorter than the Debye length $λ$, which characterizes the screening due to the thermal excitation of free carriers. The dual effect is the ac heat c…
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We propose a thermopolarization effect with a purely electronic origin, where the electric polarization $P$ is induced by the temperature gradient $\nabla T$. This is observable as a Seebeck effect in a finite-size system where the linear size $L$ is shorter than the Debye length $λ$, which characterizes the screening due to the thermal excitation of free carriers. The dual effect is the ac heat current induced by the time derivative of the electric field $E$. The Seebeck coefficient $S$ diverges as $\sim t_{\mathrm{asym}}/eT$ when the temperature $T$ goes to $0$, where $t_{\mathrm{asym}}$ represents the asymmetry of the conduction band and the valence band and $e$ is the elementary charge.
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Submitted 24 September, 2021; v1 submitted 17 May, 2021;
originally announced May 2021.
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Feedback-type thermoelectric effect in correlated solids
Authors:
Yugo Onishi,
Naoto Nagaosa
Abstract:
A new thermoelectric effect mechanism inspired by an autonomous Maxwell's demon [P. Strasberg, G. Schaller, T. Brandes, and M. Esposito, Phys. Rev. Lett. 110, 040601 (2013)] is proposed. In contrast to the former work where a model for microscopic systems is proposed, a specific model for the thermoelectric effect in solid is formulated and its response to the electric field and temperature gradie…
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A new thermoelectric effect mechanism inspired by an autonomous Maxwell's demon [P. Strasberg, G. Schaller, T. Brandes, and M. Esposito, Phys. Rev. Lett. 110, 040601 (2013)] is proposed. In contrast to the former work where a model for microscopic systems is proposed, a specific model for the thermoelectric effect in solid is formulated and its response to the electric field and temperature gradient is calculated in the framework of stochastic thermodynamics. The results show that relatively high $ZT$, which represents efficiency of the thermoelectric material, can be achieved within a range of realistic parameters.
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Submitted 4 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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Instantaneous Photon Drag Currents in Topological Insulators
Authors:
Yoshito Onishi,
Zhi Ren,
Mario Novak,
Kouji Segawa,
Yoichi Ando,
Koichiro Tanaka
Abstract:
Topological insulator materials have been extensively studied in the field of condensed matter physics because nontrivial topology in the electronic state gives rise to a novel spin-polarized Dirac dispersion on the surface. To describe the electrodynamics of topological insulators, it is crucial to understand coherent and incoherent dynamics of carriers both in bulk and surface states. We applied…
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Topological insulator materials have been extensively studied in the field of condensed matter physics because nontrivial topology in the electronic state gives rise to a novel spin-polarized Dirac dispersion on the surface. To describe the electrodynamics of topological insulators, it is crucial to understand coherent and incoherent dynamics of carriers both in bulk and surface states. We applied terahertz emission spectroscopy to an intrinsic three-dimensional topological insulator material, $Bi_{1.5} Sb_{0.5} Te_{1.7} Se_{1.3}$, to elucidate ultrafast photo-induced carrier dynamics. The emitted terahertz electric field strongly depended on the polarization and incident angle of the excitation pulse. A three-fold rotational symmetry was clearly confirmed in the dependence of terahertz emissions on the azimuthal angle. The origin of terahertz emissions should be instantaneous photon drag currents induced by the excitation of femtosecond pulses.
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Submitted 30 March, 2015; v1 submitted 11 March, 2014;
originally announced March 2014.
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Enhanced Valence Fluctuations Caused by f-c Coulomb Interaction in Ce-Based Heavy Electrons: Possible Origin of Pressure-Induced Enhancement of Superconducting Transition Temperature in \Ge and Related Compounds
Authors:
Y. Onishi,
K. Miyake
Abstract:
Properties of an extended periodic Anderson model with the f-c Coulomb interaction $\Ufc$ is studied as a model for \Ge and related compounds which is cosidered to exhibit a sharp valence change under pressure. The problem is treated by extending the {\it slave-boson} and large-N expansion method to treat the present system. It is shown that, as the f-level $ε_{\rm f}$ is increased relative to t…
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Properties of an extended periodic Anderson model with the f-c Coulomb interaction $\Ufc$ is studied as a model for \Ge and related compounds which is cosidered to exhibit a sharp valence change under pressure. The problem is treated by extending the {\it slave-boson} and large-N expansion method to treat the present system. It is shown that, as the f-level $ε_{\rm f}$ is increased relative to the Fermi level, the sharp valence change is caused by the effect of $\Ufc$ with moderate strength of the order of the bandwith of conduction electrons. The superconducting transition temperature $T_\rc$ due to the valence-fluctuation exchange is estimated on the slave-boson fluctuation approximation. In the model with spherical Fermi surface, $T_\rc$ exhibits sharp peak as a function of $ε_{\rm f}$, simulating the effect of pressure, for the d-wave pairing channel.
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Submitted 17 August, 2000;
originally announced August 2000.
