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Effect of boundary roughness on the attenuation of specular phonon reflection in graphene
Authors:
Zhun-Yong Ong
Abstract:
The reduced phonon specularity $p$ from boundary roughness scattering plays a major role in the lower thermal conductivity in semiconducting and insulating nanowires and films. Although the well-known Ziman formula $p=\exp(-4σ^{2}q_{x}^{2})$, where $σ$ and $q_{x}$ denote the root-mean-square boundary roughness and the normal component of the incident phonon wave vector, respectively, and its varia…
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The reduced phonon specularity $p$ from boundary roughness scattering plays a major role in the lower thermal conductivity in semiconducting and insulating nanowires and films. Although the well-known Ziman formula $p=\exp(-4σ^{2}q_{x}^{2})$, where $σ$ and $q_{x}$ denote the root-mean-square boundary roughness and the normal component of the incident phonon wave vector, respectively, and its variants are commonly used in the literature to estimate how roughness attenuates $p$, their validity and accuracy remain poorly understood, especially when the effects of mode conversion cannot be ignored. In this paper, we investigate the accuracy and validity of the more general Ogilvy formula, from which the Ziman formula is derived, by comparing its predictions to the $p$ values computed from Atomistic Green's Function (AGF) simulations for an ensemble of rough boundaries in single-layer graphene. The effects of phonon dispersion, incident angle, polarization, mode conversion, and correlation length are analyzed. Our results suggest that the Ogilvy formula is remarkably accurate for $0<q_{x}<\fracπ{4σ}$ when the lateral correlation length $L$ is large or the phonon is at normal incidence. At large $q_{x}$ in the short-wavelength limit, the $q_{x}$-dependence of $p$ becomes significantly weaker. In the large-$L$ limit, the numerical results suggest the existence of a minimum $p$ for short-wavelength phonons, given by $p\sim p_{0}\exp(-π^{2}/4)$, where $p_{0}$ is the baseline specularity for the ideal boundary.
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Submitted 22 May, 2024;
originally announced May 2024.
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Control of wave scattering for robust coherent transmission in a disordered medium
Authors:
Zhun-Yong Ong
Abstract:
The spatial structure of the inhomogeneity in a disordered medium determines how waves scatter and propagate in it. We present a theoretical model of how the Fourier components of the disorder control wave scattering in a two-dimensional disordered medium, by analyzing the disordered Green's function for scalar waves. By selecting a set of Fourier components with the appropriate wave vectors, we c…
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The spatial structure of the inhomogeneity in a disordered medium determines how waves scatter and propagate in it. We present a theoretical model of how the Fourier components of the disorder control wave scattering in a two-dimensional disordered medium, by analyzing the disordered Green's function for scalar waves. By selecting a set of Fourier components with the appropriate wave vectors, we can enhance or suppress wave scattering to filter out unwanted waves and allow the robust coherent transmission of waves at specific angles and wavelengths through the disordered medium. Based on this principle, we propose an approach for creating selective transparency, band gaps and anisotropy in disordered media. This approach is validated by direct numerical simulations of coherent wave transmission over a wide range of incident angles and frequencies and can be experimentally realized in disordered photonic crystals. Our approach, which requires neither nontrivial topological wave properties nor a non-Hermitian medium, creates opportunities for exploring a broad range of wave phenomena in disordered systems.
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Submitted 1 October, 2023; v1 submitted 12 May, 2023;
originally announced May 2023.
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The role of flexural coupling in heat dissipation from a two-dimensional layered material to its hexagonal boron nitride substrate
Authors:
Zhun-Yong Ong,
Gang Zhang,
Yong-Wei Zhang
Abstract:
Understanding the limits of phononic heat dissipation from a two-dimensional layered material (2DLM) to its hexagonal boron nitride (h-BN) substrate and how it varies with the structure of the 2DLM is important for the design and thermal management of h-BN-supported nanoelectronic devices. We formulate an elasticity-based theory to model the phonon-mediated heat dissipation between a 2DLM and its…
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Understanding the limits of phononic heat dissipation from a two-dimensional layered material (2DLM) to its hexagonal boron nitride (h-BN) substrate and how it varies with the structure of the 2DLM is important for the design and thermal management of h-BN-supported nanoelectronic devices. We formulate an elasticity-based theory to model the phonon-mediated heat dissipation between a 2DLM and its h-BN substrate. By treating the h-BN substrate as a semi-infinite stack of harmonically coupled thin plates, we obtain semi-analytical expressions for the thermal boundary conductance (TBC) and interfacial phonon transmission spectrum. We evaluate the temperature-dependent TBC of the $N$-layer 2DLM (graphene or MoS$_{2}$) on different common substrates (h-BN vs. a-SiO$_{2}$) at different values of $N$. The results suggest that h-BN is substantially more effective for heat dissipation from MoS$_{2}$ than a-SiO$_{2}$ especially at large $N$. To understand the limitations of the our stack model, we also compare its predictions in the $N=\infty$ limit to those of the more exact Atomistic Green's Function model for the graphite-BN and molybdenite-BN interfaces. Our stack model provides clear insights into the key role of the flexural modes in the TBC and how the anisotropic elastic properties of h-BN affect heat dissipation.
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Submitted 16 April, 2021;
originally announced April 2021.
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Specular transmission and diffuse reflection in phonon scattering at grain boundary
Authors:
Zhun-Yong Ong
Abstract:
It is widely assumed in the literature that the specularity parameters for phonon transmission (forward scattering) and reflection (backward scattering) at a boundary are identical, i.e., the statistical distributions of the transition probabilities between an incident phonon and the range of outgoing phonon modes are the same for both transmission and reflection. However, it is hypothesized by Li…
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It is widely assumed in the literature that the specularity parameters for phonon transmission (forward scattering) and reflection (backward scattering) at a boundary are identical, i.e., the statistical distributions of the transition probabilities between an incident phonon and the range of outgoing phonon modes are the same for both transmission and reflection. However, it is hypothesized by Li and McGaughey that separate specularity parameters are needed to describe the behavior of transmitted and reflected phonons in superlattices and polycrystalline materials correctly. We test this hypothesis by analyzing the mode-resolved specularity parameters computed separately for transmission and reflection processes at a graphene grain boundary. Our results show that backward scattering is considerably more diffuse than forward scattering at most frequencies and polarizations, providing strong evidence for Li and McGaughey's hypothesis, and shed new light on how surfaces and interfaces modify phonon transport within and between domains in nanostructured materials.
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Submitted 15 May, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Complementary local-global approach for phonon mode connectivities
Authors:
Chee Kwan Gan,
Zhun-Yong Ong
Abstract:
Sorting and assigning phonon branches (e.g., longitudinal acoustic) of phonon modes is important for characterizing the phonon bands of a crystal and the determination of phonon properties such as the Grüneisan parameter and group velocity. To do this, the phonon band indices (including the longitudinal and transverse acoustic) have to be assigned correctly to all phonon modes across a path or pat…
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Sorting and assigning phonon branches (e.g., longitudinal acoustic) of phonon modes is important for characterizing the phonon bands of a crystal and the determination of phonon properties such as the Grüneisan parameter and group velocity. To do this, the phonon band indices (including the longitudinal and transverse acoustic) have to be assigned correctly to all phonon modes across a path or paths in the Brillouin zone. As our solution to this challenging problem, we propose a computationally efficient and robust two-stage hybrid method that combines two approaches with their own merits. The first is the perturbative approach in which we connect the modes using degenerate perturbation theory. In the second approach, we use numerical fitting based on least-squares fits to circumvent local connectivity errors at or near exact degenerate modes. The method can be easily generalized to other condensed matter problems involving Hermitian matrix operators such as electronic bands in tight-binding Hamiltonians or in a standard density-functional calculation, and photonic bands in photonic crystals.
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Submitted 12 January, 2021;
originally announced January 2021.
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Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface
Authors:
Zhun-Yong Ong,
Yongqing Cai,
Gang Zhang,
Yong-Wei Zhang
Abstract:
Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal dichalcogenide (TMD) semiconductors. We model the phononic and electronic contributions to the thermal boundary conductance (TBC) variability for the MoS…
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Understanding the physical processes involved in interfacial heat transfer is critical for the interpretation of thermometric measurements and the optimization of heat dissipation in nanoelectronic devices that are based on transition metal dichalcogenide (TMD) semiconductors. We model the phononic and electronic contributions to the thermal boundary conductance (TBC) variability for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2}$ interface. A phenomenological theory to model diffuse phonon transport at disordered interfaces is introduced and yields $G$=13.5 and 12.4 MW/K/m$^{2}$ at 300 K for the MoS$_{2}$-SiO$_{2}$ and WS$_{2}$-SiO$_{2} $ interface, respectively. We compare its predictions to those of the coherent phonon model and find that the former fits the MoS$_{2}$-SiO$_{2}$ data from experiments and simulations significantly better. Our analysis suggests that heat dissipation at the TMD-SiO$_{2}$ interface is dominated by phonons scattered diffusely by the rough interface although the electronic TBC contribution can be significant even at low electron densities ($n\leq10^{12}$ cm$^{-2}$) and may explain some of the variation in the experimental TBC data from the literature. The physical insights from our study can be useful for the development of thermally aware designs in TMD-based nanoelectronics.
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Submitted 9 January, 2021;
originally announced January 2021.
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Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides
Authors:
Zhun-Yong Ong,
Gang Zhang,
Linyou Cao,
Yong-Wei Zhang
Abstract:
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS$_{2}$ and WS$_{2}$, and model their electronic TBC with different dielectric substrates (SiO$_{2}$, HfO$_{2}$…
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Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS$_{2}$ and WS$_{2}$, and model their electronic TBC with different dielectric substrates (SiO$_{2}$, HfO$_{2}$ and Al$_{2}$O$_{3}$). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al$_{2}$O$_{3}$. Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.
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Submitted 24 September, 2020;
originally announced September 2020.
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Structure-specific, mode-resolved phonon coherence and specularity at graphene grain boundaries
Authors:
Zhun-Yong Ong,
Georg Schusteritsch,
Chris J. Pickard
Abstract:
In spite of their importance for understanding phonon transport phenomena in thin films and polycrystalline solids, the effects of boundary roughness scattering on phonon specularity and coherence are poorly understood because there is no general method for predicting their dependence on phonon momentum, frequency, branch and boundary morphology. Using the recently formulated atomistic S-matrix me…
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In spite of their importance for understanding phonon transport phenomena in thin films and polycrystalline solids, the effects of boundary roughness scattering on phonon specularity and coherence are poorly understood because there is no general method for predicting their dependence on phonon momentum, frequency, branch and boundary morphology. Using the recently formulated atomistic S-matrix method, we develop a theory of boundary roughness scattering to determine the mode-resolved phonon coherence and specularity parameters from the scattering amplitudes. To illustrate the theory, we apply it to phonon scattering in realistic nonsymmetric graphene grain boundary (GB) models derived from atomic structure predictions. The method is validated by comparing its predictions with frequency-resolved results from lattice dynamics-based calculations. We prove that incoherent scattering is almost perfectly diffusive. We show that phonon scattering at the graphene GB is not diffuse although coherence and specularity are significantly reduced for long-wavelength flexural acoustic phonons. Our approach can be generalized to other atomistic boundary models.
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Submitted 15 April, 2020;
originally announced April 2020.
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Energy dissipation in van der Waals two-dimensional devices
Authors:
Zhun-Yong Ong,
Myung-Ho Bae
Abstract:
Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in such materials. We review the microscopic mechanisms that govern Joule heating and energy dissipation processes in 2D materials such as graphene, black phosphoru…
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Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in such materials. We review the microscopic mechanisms that govern Joule heating and energy dissipation processes in 2D materials such as graphene, black phosphorus and semiconducting transition metal dichalcogenides. We discuss the processes through which non-equilibrium charge carriers, created either transiently through photoexcitation or at steady state by a large electric field, undergo energy relaxation with the lattice and the substrate We also discuss how these energy dissipation processes are affected by the device configuration (heterostructure, substrate material including hexagonal boron nitride, etc) as the use of different substrates, encapsulation, disorder, etc can introduce or remove scattering processes that change the energy relaxation pathways. Finally, we discuss how the unique carrier scattering dynamics in graphene-based vdW heterostructures can be exploited for optoelectronic applications in light emission and photodetection.
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Submitted 22 April, 2019;
originally announced April 2019.
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Atomistic S-matrix method for numerical simulation of phonon reflection, transmission and boundary scattering
Authors:
Zhun-Yong Ong
Abstract:
The control of phonon scattering by interfaces is critical to the manipulation of heat conduction in composite materials and semiconducting nanostructures. However, one of the factors limiting our understanding of elastic phonon scattering is the lack of a computationally efficient approach for describing the phenomenon in a manner that accounts for the atomistic configuration of the interface and…
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The control of phonon scattering by interfaces is critical to the manipulation of heat conduction in composite materials and semiconducting nanostructures. However, one of the factors limiting our understanding of elastic phonon scattering is the lack of a computationally efficient approach for describing the phenomenon in a manner that accounts for the atomistic configuration of the interface and the exact bulk phonon dispersion. Building on the atomistic Green's function (AGF) technique for ballistic phonon transport, we formulate an atomistic S-matrix method that treats bulk phonon modes as the scattering channels and can determine the numerically exact scattering amplitudes for individual two-phonon processes, enabling a highly detailed analysis of the phonon transmission and reflection spectrum as well as the directional dependence of the phonon scattering specularity. Explicit formulas for the individual phonon reflection, absorption and transmission coefficients are given in our formulation. This AGF-based S-matrix approach is illustrated through the investigation of: (1) phonon scattering at the junction between two isotopically different but structurally identical carbon nanotubes, and (2) phonon boundary scattering at the zigzag and armchair edges in graphene. In particular, we uncover the role of edge chirality on phonon scattering specularity and explain why specularity is reduced for the ideal armchair edge. The application of the method can shed new light on the relationship between phonon scattering and the atomistic structure of interfaces.
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Submitted 6 November, 2018;
originally announced November 2018.
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Tutorial: Concepts and numerical techniques for modeling individual phonon transmission at interfaces
Authors:
Zhun-Yong Ong
Abstract:
At the nanoscale, thermal transport across the interface between two lattice insulators can be described by the transmission of bulk phonons and depends on the crystallographic structure of the interface and the bulk crystal lattice. In this tutorial, we give an account of how an extension of the Atomistic Green's Function (AGF) method based on the concept of the Bloch matrix can be used to model…
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At the nanoscale, thermal transport across the interface between two lattice insulators can be described by the transmission of bulk phonons and depends on the crystallographic structure of the interface and the bulk crystal lattice. In this tutorial, we give an account of how an extension of the Atomistic Green's Function (AGF) method based on the concept of the Bloch matrix can be used to model the transmission of individual phonon modes and allow us to determine the wavelength and polarization dependence of the phonon transmission. Within this framework, we can explicitly establish the relationship between the phonon transmission coefficient and dispersion. Details of the numerical methods used in the extended AGF method are provided. To illustrate how the extended AGF method can be applied to yield insights into individual phonon transmission, we study the (16,0)/(8,0) carbon nanotube intramolecular junction. The method presented here sheds light on the modal contribution to interfacial thermal transport between solids.
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Submitted 17 October, 2018; v1 submitted 28 September, 2018;
originally announced September 2018.
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Thickness-dependent Kapitza resistance in multilayered graphene and other two-dimensional crystals
Authors:
Zhun-Yong Ong
Abstract:
The Kapitza or thermal boundary resistance (TBR), which limits heat dissipation from a thin film to its substrate, is a major factor in the thermal management of ultrathin nanoelectronic devices and is widely assumed to be a property of only the interface. However, data from experiments and molecular dynamics simulations suggest that the TBR between a multilayer 2-dimensional (2D) crystal and its…
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The Kapitza or thermal boundary resistance (TBR), which limits heat dissipation from a thin film to its substrate, is a major factor in the thermal management of ultrathin nanoelectronic devices and is widely assumed to be a property of only the interface. However, data from experiments and molecular dynamics simulations suggest that the TBR between a multilayer 2-dimensional (2D) crystal and its substrate decreases with increasing film thickness. To explain this thickness dependence, we generalize the recent theory for single-layer 2D crystals by Ong, Cai and Zhang [Phys. Rev. B 94, 165427 (2016)], which is derived from the theory by Persson, Volokitin, and Ueba [J. Phys.: Condens. Matter 23, 045009 (2011)], and use it to evaluate the TBR between bare $N$-layer graphene and SiO$_{2}$. Our calculations reproduce quantitatively the TBR thickness dependence seen in experiments and simulations as well as its asymptotic convergence, and predict that the low-temperature TBR scales as $T^{-4}$ in few-layer graphene. Analysis of the interfacial transmission coefficient spectrum shows that the TBR reduction in few-layer graphene is due to the additional contribution from higher flexural phonon branches. Our theory sheds light on the role of flexural phonons in substrate-directed heat dissipation and provides the framework for optimizing the thermal management of multilayered 2D devices.
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Submitted 12 April, 2017; v1 submitted 3 April, 2017;
originally announced April 2017.
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Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
Authors:
Zhihao Yu,
Zhun-Yong Ong,
Songlin Li,
Jian-Bin Xu,
Gang Zhang,
Yong-Wei Zhang,
Yi Shi,
Xinran Wang
Abstract:
Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical room-temperature mobility of hundreds to thousands cm2/Vs. So far, however, all TMDCs show much lower mobility experimentally because of the collective effects…
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Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical room-temperature mobility of hundreds to thousands cm2/Vs. So far, however, all TMDCs show much lower mobility experimentally because of the collective effects by foreign impurities, which has become one of the most important limitations for their device applications. Here, taking MoS2 as an example, we review the key factors that bring down the mobility in TMDC transistors, including phonons, charged impurities, defects, and charge traps. We introduce a theoretical model that quantitatively captures the scaling of mobility with temperature, carrier density and thickness. By fitting the available mobility data from literature over the past few years, we are able to obtain the density of impurities and traps for a wide range of transistor structures. We show that interface engineering such as oxide surface passivation, high-k dielectrics and BN encapsulation could effectively reduce the impurities, leading to improved device performances. For few-layer TMDCs, we analytically model the lopsided carrier distribution to elucidate the experimental increase of mobility with the number of layers. From our analysis, it is clear that the charge transport in TMDC samples is a very complex problem that must be handled carefully. We hope that this Review can provide new insights and serve as a starting point for further improving the performance of TMDC transistors.
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Submitted 9 January, 2017;
originally announced January 2017.
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Transport and localization in a topological phononic lattice with correlated disorder
Authors:
Zhun-Yong Ong,
Ching Hua Lee
Abstract:
Recently proposed classical analogs of topological insulators in phononic lattices have the advantage of much more accessible experimental realization as compared to conventional materials. Drawn to their potential practical structural applications, we investigate how disorder, which is generically non-negligible in macroscopic realization, can attenuate the topologically protected edge (TPE) mode…
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Recently proposed classical analogs of topological insulators in phononic lattices have the advantage of much more accessible experimental realization as compared to conventional materials. Drawn to their potential practical structural applications, we investigate how disorder, which is generically non-negligible in macroscopic realization, can attenuate the topologically protected edge (TPE) modes that constitute robust transmitting channels at zero disorder. We simulate the transmission of phonon modes in a quasi-one-dimensional classical lattice waveguide with mass disorder, and show that the TPE mode transmission remains highly robust ($Ξ\sim1$) in the presence of uncorrelated disorder, but diminishes when disorder is spatially correlated. This reduction in transmittance is attributed to the Anderson localization of states within the mass disorder domains. By contrast, non-TPE channels exhibit qualitatively different behavior, with spatial correlation in the mass disorder leading to significant transmittance reduction (enhancement) at low (high) frequencies. Our results demonstrate how topologically protected edge modes drastically modify the effect of spatial correlation on mode localization.
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Submitted 27 November, 2016; v1 submitted 23 September, 2016;
originally announced September 2016.
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Theory of substrate-directed heat dissipation for single-layer graphene and other two-dimensional crystals
Authors:
Zhun-Yong Ong,
Yongqing Cai,
Gang Zhang
Abstract:
We present a theory of the phononic thermal (Kapitza) resistance at the interface between graphene or another single-layer two-dimensional (2D) crystal (e.g. MoS$_{2}$) and a flat substrate, based on a modified version of the cross-plane heat transfer model by Persson, Volokitin and Ueba [J. Phys.: Condens. Matter 23, 045009 (2011)]. We show how intrinsic flexural phonon dam** is necessary for o…
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We present a theory of the phononic thermal (Kapitza) resistance at the interface between graphene or another single-layer two-dimensional (2D) crystal (e.g. MoS$_{2}$) and a flat substrate, based on a modified version of the cross-plane heat transfer model by Persson, Volokitin and Ueba [J. Phys.: Condens. Matter 23, 045009 (2011)]. We show how intrinsic flexural phonon dam** is necessary for obtaining a finite Kapitza resistance and also generalize the theory to encased single-layer 2D crystals with a superstrate. We illustrate our model by computing the thermal boundary conductance (TBC) for bare and SiO$_{2}$-encased single-layer graphene and MoS$_{2}$ on a SiO$_{2}$ substrate, using input parameters from first-principles calculation. The estimated room temperature TBC for bare (encased) graphene and MoS$_{2}$ on SiO$_{2}$ are 34.6 (105) and 3.10 (5.07) MWK$^{-1}$m$^{-2}$, respectively. The theory predicts the existence of a phonon frequency crossover point, below which the low-frequency flexural phonons in the bare 2D crystal do not dissipate energy efficiently to the substrate. We explain within the framework of our theory how the encasement of graphene with a top SiO$_{2}$ layer introduces new low-frequency transmission channels which significantly reduce the graphene-substrate Kapitza resistance. We emphasize that the distinction between bare and encased 2D crystals must be made in the analysis of cross-plane heat dissipation to the substrate.
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Submitted 26 September, 2016; v1 submitted 1 August, 2016;
originally announced August 2016.
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Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Authors:
Zhihao Yu,
Zhun-Yong Ong,
Yiming Pan,
Yang Cui,
Run Xin,
Yi Shi,
Baigeng Wang,
Yun Wu,
Tangsheng Che,
Yong-Wei Zhang,
Gang Zhang,
Xinran Wang
Abstract:
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scali…
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We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.
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Submitted 3 October, 2015;
originally announced October 2015.
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High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics
Authors:
Yang Cui,
Run Xin,
Zhihao Yu,
Yiming Pan,
Zhun-Yong Ong,
Xiaoxu Wei,
Junzhuan Wang,
Haiyan Nan,
Zhenhua Ni,
Yun Wu,
Tangsheng Chen,
Yi Shi,
Baigeng Wang,
Gang Zhang,
Yong-Wei Zhang,
Xinran Wang
Abstract:
The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature…
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The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.
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Submitted 3 October, 2015;
originally announced October 2015.
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Enhancement and reduction of one-dimensional heat conduction with correlated mass disorder
Authors:
Zhun-Yong Ong,
Gang Zhang
Abstract:
Short-range order in strongly disordered structures plays an important role in their heat conduction property. Using numerical and analytical methods, we show that short-range spatial correlation (with a correlation length of $Λ_{m}$) in the mass distribution of the one-dimensional (1D) alloy-like random binary lattice leads to a dramatic enhancement of the high-frequency phonon transmittance but…
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Short-range order in strongly disordered structures plays an important role in their heat conduction property. Using numerical and analytical methods, we show that short-range spatial correlation (with a correlation length of $Λ_{m}$) in the mass distribution of the one-dimensional (1D) alloy-like random binary lattice leads to a dramatic enhancement of the high-frequency phonon transmittance but also increases the low-frequency phonon opacity. High-frequency semi-extended states are formed while low-frequency modes become more localized. This results in ballistic heat conduction at finite lengths but also paradoxically higher thermal resistance that scale as $\sqrt{Λ_{m}}$ in the $L\rightarrow\infty$ limit. We identify an emergent crossover length ($L_{c}$) below which the onset of thermal transparency appears. The crossover length is linearly dependent on but is two orders of magnitude larger than $Λ_{m}$. Our results suggest that the phonon transmittance spectrum and heat conduction in a disordered 1D lattice can be controlled via statistical clustering of the constituent component atoms into domains. They also imply that the detection of ballistic heat conduction in disordered 1D structures may be a signature of the intrinsic mass correlation at a much smaller length scale.
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Submitted 10 December, 2014;
originally announced December 2014.
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Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene
Authors:
Zhun-Yong Ong,
Gang Zhang,
Yong Wei Zhang
Abstract:
The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility $μ$ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (…
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The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility $μ$ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities ($μ\propto T^{-γ}$) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-$κ$ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.
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Submitted 10 December, 2014;
originally announced December 2014.
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Mobility enhancement and temperature dependence in top-gated single-layer MoS2
Authors:
Zhun-Yong Ong,
Massimo V. Fischetti
Abstract:
The deposition of a high-$κ$ oxide overlayer is known to significantly enhance the room-temperature electron mobility in single-layer MoS$_{2}$ (SLM) but not in single-layer graphene (SLG). We give a quantitative account of how this mobility enhancement is due to the non-degeneracy of the two-dimensional electron gas system in SLM at accessible temperatures. Using our charged impurity scattering m…
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The deposition of a high-$κ$ oxide overlayer is known to significantly enhance the room-temperature electron mobility in single-layer MoS$_{2}$ (SLM) but not in single-layer graphene (SLG). We give a quantitative account of how this mobility enhancement is due to the non-degeneracy of the two-dimensional electron gas system in SLM at accessible temperatures. Using our charged impurity scattering model [Ong and Fischetti, Phys. Rev. B 86, 121409 (2012)] and temperature-dependent polarizability, we calculate the charged impurity-limited mobility ($μ_{\textrm{imp}}$) in SLM with and without a high-$κ$ (HfO$_{2}$) top gate oxide at different electron densities and temperatures. We find that the mobility enhancement is larger at low electron densities and high temperatures because of finite-temperature screening, thus explaining the enhancement of the mobility observed at room temperature. $μ_{\textrm{imp}}$ is shown to decrease significantly with increasing temperature, suggesting that the strong temperature dependence of measured mobilities should not be interpreted as being solely due to inelastic scattering with phonons. We also reproduce the recently seen experimental trend in which the temperature scaling exponent ($γ$) of $μ_{\textrm{imp}}\propto T^{-γ}$ is smaller in top-gated SLM than in bare SLM. Finally, we show that a $\sim37$ percent mobility enhancement can be achieved by reducing the HfO$_{2}$ thickness from 20 to 2 nm.
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Submitted 3 September, 2014;
originally announced September 2014.
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Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
Authors:
Zhun-Yong Ong,
Yongqing Cai,
Gang Zhang,
Yong-Wei Zhang
Abstract:
Using first-principles calculations and non-equilibrium Green's function method, we investigate the ballistic thermal transport in single-layer phosphorene. A significant crystallographic orientation dependence of thermal conductance is observed, with room temperature thermal conductance along zigzag direction being 40 percent higher than that along armchair direction. Furthermore, we find that th…
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Using first-principles calculations and non-equilibrium Green's function method, we investigate the ballistic thermal transport in single-layer phosphorene. A significant crystallographic orientation dependence of thermal conductance is observed, with room temperature thermal conductance along zigzag direction being 40 percent higher than that along armchair direction. Furthermore, we find that the thermal conductance anisotropy with the orientation can be tuned by applying strain. In particular, the zigzag-oriented thermal conductance is enhanced when a zigzag-oriented strain is applied but decreases when an armchair-oriented strain is applied; whereas the armchair-oriented thermal conductance always decreases when either a zigzag- or an armchair-oriented strain is applied. The present work suggests that the remarkable thermal transport anisotropy and its strain-modulated effect in single-layer phosphorene may be used for thermal management in phosphorene-based electronics and optoelectronic devices.
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Submitted 3 September, 2014;
originally announced September 2014.
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Ballistic Heat Conduction and Mass Disorder in One Dimension
Authors:
Zhun-Yong Ong,
Gang Zhang
Abstract:
It is well-known that in the disordered harmonic chain, heat conduction is subballistic and the thermal conductivity ($κ$) scales asymptotically as $\lim_{L\rightarrow\infty}κ\propto L^{0.5}$ where $L$ is the chain length. However, using the nonequilibrium Green's function (NEGF) method and analytical modeling, we show that there exists a critical crossover length scale ($L_{C}$) below which balli…
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It is well-known that in the disordered harmonic chain, heat conduction is subballistic and the thermal conductivity ($κ$) scales asymptotically as $\lim_{L\rightarrow\infty}κ\propto L^{0.5}$ where $L$ is the chain length. However, using the nonequilibrium Green's function (NEGF) method and analytical modeling, we show that there exists a critical crossover length scale ($L_{C}$) below which ballistic heat conduction ($κ\propto L$) can coexist with mass disorder. This ballistic-to-subballistic heat conduction crossover is connected to the exponential attenuation of the phonon transmittance function $Ξ$ i.e. $Ξ(ω,L)=\exp[-L/λ(ω)]$, where $λ$ is the frequency-dependent attenuation length. The crossover length can be determined from the minimum attenuation length which depends on the maximum transmitted frequency. We numerically determine the dependence of the transmittance on frequency and mass composition as well as derive a closed form estimate which agrees closely with the numerical results. For the length-dependent thermal conductance, we also derive a closed form expression which agrees closely with numerical results and reproduces the ballistic to subballistic thermal conduction crossover. This allows us to characterize the crossover in terms of changes in the length, mass composition and temperature dependence, and also to determine the conditions under which heat conduction enters the ballistic regime. We describe how the mass composition can be modified to increase ballistic heat conduction
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Submitted 3 September, 2014;
originally announced September 2014.
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Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
Authors:
Zhihao Yu,
Yiming Pan,
Yuting Shen,
Zilu Wang,
Zhun-Yong Ong,
Tao Xu,
Run Xin,
Lijia Pan,
Baigeng Wang,
Litao Sun,
**lan Wang,
Gang Zhang,
Yong Wei Zhang,
Yi Shi,
Xinran Wang
Abstract:
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here, we develop a facile low-temperat…
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Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here, we develop a facile low-temperature thiol chemistry to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility greater than 80cm2 V-1 s-1 is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.
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Submitted 27 August, 2014;
originally announced August 2014.
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Theoretical analysis of high-field transport in graphene on a substrate
Authors:
Andrey Y. Serov,
Zhun-Yong Ong,
Massimo V. Fischetti,
Eric Pop
Abstract:
We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene phonons and dynamically screened interfacial plasmon-phonon (IPP) modes. We uncover that while low-field transport is largely determined by impurity scattering, high…
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We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene phonons and dynamically screened interfacial plasmon-phonon (IPP) modes. We uncover that while low-field transport is largely determined by impurity scattering, high-field transport is defined by scattering with dielectric-induced IPP modes, and a smaller contribution of graphene intrinsic phonons. We also find that lattice heating can lead to negative differential drift velocity (with respect to the electric field), which can be controlled by changing the underlying dielectric thermal properties or thickness. Graphene on BN exhibits the largest high-field drift velocity, while graphene on HfO2 has the lowest one due to strong influence of IPP modes.
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Submitted 17 June, 2014;
originally announced June 2014.
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Ballistic to diffusive crossover of heat flow in graphene ribbons
Authors:
Myung-Ho Bae,
Zuanyi Li,
Zlatan Aksamija,
Pierre N. Martin,
Feng Xiong,
Zhun-Yong Ong,
Irena Knezevic,
Eric Pop
Abstract:
Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, en…
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Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, enabled by the relatively large phonon mfp (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons (GNRs) leads to a diffusive heat flow regime that is controlled by ribbon width and edge disorder. In the edge-controlled regime, the GNR thermal conductivity scales with width approximately as ~W^{1.8+/-0.3}, being about 100 W/m/K in 65-nm-wide GNRs, at room temperature. Manipulation of device dimensions on the scale of the phonon mfp can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds.
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Submitted 3 April, 2013;
originally announced April 2013.
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Effect of Grain Boundaries on Thermal Transport in Graphene
Authors:
Andrey Y. Serov,
Zhun-Yong Ong,
Eric Pop
Abstract:
We investigate the influence of grain boundaries (GBs), line defects (LDs), and chirality on thermal transport in graphene using non-equilibrium Green's functions. At room temperature the ballistic thermal conductance is ~4.2 GW/m^2/K, and single GBs or LDs yield transmission from 50-80% of this value. LDs with carbon atom octagon defects have lower thermal transmission than GBs with pentagon and…
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We investigate the influence of grain boundaries (GBs), line defects (LDs), and chirality on thermal transport in graphene using non-equilibrium Green's functions. At room temperature the ballistic thermal conductance is ~4.2 GW/m^2/K, and single GBs or LDs yield transmission from 50-80% of this value. LDs with carbon atom octagon defects have lower thermal transmission than GBs with pentagon and heptagon defects. We apply our findings to study the thermal conductivity of polycrystalline graphene for practical applications, and find that the type and size of GBs play an important role when grain sizes are smaller than a few hundred nanometers.
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Submitted 20 December, 2012; v1 submitted 30 October, 2012;
originally announced October 2012.
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Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
Authors:
Zhun-Yong Ong,
Massimo V. Fischetti
Abstract:
One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic anti-screening and screening of remote phonons emerge. The remote phono…
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One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic anti-screening and screening of remote phonons emerge. The remote phonon-limited mobilities for SiO$_{2}$, HfO$_{2}$, h-BN and Al$_{2}$O$_{3}$ substrates are computed using our theory. We find that h-BN yields the highest peak mobility, but in the practically useful high-density range the mobility in HfO$_{2}$-supported graphene is high, despite the fact that HfO$_{2}$ is a high-$κ$ dielectric with low-frequency modes. Our theory predicts that the strong temperature dependence of the total mobility effectively vanishes at very high carrier concentrations. The effects of polycrystallinity on IPP scattering are also discussed.
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Submitted 26 July, 2012;
originally announced July 2012.
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Charged Impurity Scattering in Graphene Nanostructures
Authors:
Zhun-Yong Ong,
Massimo V. Fischetti
Abstract:
We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterost…
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We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterostructures decreases with increasing top dielectric thickness and higher carrier density. An increase of up to almost 60 percent in carrier mobility in ultrathin top-gated graphene is predicted.
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Submitted 26 July, 2012;
originally announced July 2012.
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Reduction of Phonon Lifetimes and Thermal Conductivity of a Carbon Nanotube on Amorphous Silica
Authors:
Zhun-Yong Ong,
Eric Pop,
Junichiro Shiomi
Abstract:
We use molecular dynamics simulations to examine the phonon lifetimes in (10,10) carbon nano-tubes (CNTs), both when isolated and when supported on amorphous SiO2 substrates. We deter-mine the Umklapp, normal, boundary and CNT-substrate phonon scattering rates from the com-puted inverse lifetimes. Suspended CNTs have in-plane optical phonon lifetimes between 0.7-2 ps, consistent with recent experi…
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We use molecular dynamics simulations to examine the phonon lifetimes in (10,10) carbon nano-tubes (CNTs), both when isolated and when supported on amorphous SiO2 substrates. We deter-mine the Umklapp, normal, boundary and CNT-substrate phonon scattering rates from the com-puted inverse lifetimes. Suspended CNTs have in-plane optical phonon lifetimes between 0.7-2 ps, consistent with recent experiments, but contact with the substrate leads to a lifetime reduction to the 0.6-1.3 ps range. The thermal conductivity of the supported CNT is also computed to be ~30 percent lower than that of the isolated CNT. The thermal boundary conductance estimated from the CNT-substrate phonon scattering rates is in good agreement with that computed from the Green-Kubo relation and with previous experimental results. The results highlight that solid substrates can strongly affect and could be even used to tune the thermal properties of CNTs.
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Submitted 17 June, 2011; v1 submitted 14 June, 2011;
originally announced June 2011.
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Effect of substrate modes on thermal transport in supported graphene
Authors:
Zhun-Yong Ong,
Eric Pop
Abstract:
We examine thermal transport in graphene supported on SiO2 using molecular dynamics simulations. Coupling to the substrate reduces the thermal conductivity (TC) of supported graphene by an order of magnitude, due to dam** of the flexural acoustic (ZA) phonons. However, increasing the strength of the graphene-substrate interaction enhances the TC of supported graphene, contrary to expectations. T…
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We examine thermal transport in graphene supported on SiO2 using molecular dynamics simulations. Coupling to the substrate reduces the thermal conductivity (TC) of supported graphene by an order of magnitude, due to dam** of the flexural acoustic (ZA) phonons. However, increasing the strength of the graphene-substrate interaction enhances the TC of supported graphene, contrary to expectations. The enhancement is due to the coupling of graphene ZA modes to the substrate Rayleigh waves, which linearizes the dispersion and increases the group velocity of the hybridized modes. These findings suggest that the TC of two-dimensional supported graphene is tunable through surface interactions, providing a novel possibility for controlled energy flow in nanomaterials.
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Submitted 28 September, 2011; v1 submitted 12 January, 2011;
originally announced January 2011.
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Thermal Dissipation and Variability in Electrical Breakdown of Carbon Nanotube Devices
Authors:
Albert Liao,
Rouholla Alizadegan,
Zhun-Yong Ong,
Sumit Dutta,
K. Jimmy Hsia,
Eric Pop
Abstract:
We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on SiO2 substrates. The thermal "footprint" of a CNT caused by van der Waals interactions with the substrate is revealed through molecular dynamics (MD) simulations. Experiments and modeling find the CNT-substrate thermal coupling scales proportionally to CNT diameter and inversely with SiO2 surface…
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We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on SiO2 substrates. The thermal "footprint" of a CNT caused by van der Waals interactions with the substrate is revealed through molecular dynamics (MD) simulations. Experiments and modeling find the CNT-substrate thermal coupling scales proportionally to CNT diameter and inversely with SiO2 surface roughness (~d/Δ). Comparison of diffuse mismatch modeling (DMM) and data reveals the upper limit of thermal coupling ~0.4 W/K/m per unit length at room temperature, and ~0.7 W/K/m at 600 C for the largest diameter (3-4 nm) CNTs. We also find semiconducting CNTs can break down prematurely, and display more breakdown variability due to dynamic shifts in threshold voltage, which metallic CNTs are immune to; this poses a fundamental challenge for selective electrical breakdowns in CNT electronics.
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Submitted 5 November, 2010; v1 submitted 24 May, 2010;
originally announced May 2010.
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Frequency and Polarization Dependence of Thermal Coupling between Carbon Nanotubes and SiO2
Authors:
Zhun-Yong Ong,
Eric Pop
Abstract:
We study heat dissipation from a (10,10) CNT to a SiO2 substrate using equilibrium and non-equilibrium classical molecular dynamics. The CNT-substrate thermal boundary conductance (TBC) is computed both from the relaxation time of the CNT-substrate temperature difference, and from the time autocorrelation function of the interfacial heat flux at equilibrium (Green-Kubo relation). The power spectru…
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We study heat dissipation from a (10,10) CNT to a SiO2 substrate using equilibrium and non-equilibrium classical molecular dynamics. The CNT-substrate thermal boundary conductance (TBC) is computed both from the relaxation time of the CNT-substrate temperature difference, and from the time autocorrelation function of the interfacial heat flux at equilibrium (Green-Kubo relation). The power spectrum of interfacial heat flux fluctuation and the time evolution of the internal CNT energy distribution suggest that: 1) thermal coupling is dominated by long wavelength phonons between 0-10 THz, 2) high frequency (40-57 THz) CNT phonon modes are strongly coupled to sub-40 THz CNT phonon modes, and 3) inelastic scattering between the CNT phonons and substrate phonons contributes to interfacial thermal transport. We also find that the low frequency longitudinal acoustic (LA) and twisting acoustic (TA) modes do not transfer energy to the substrate as efficiently as the low frequency transverse optical (TO) mode.
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Submitted 18 November, 2010; v1 submitted 22 May, 2010;
originally announced May 2010.
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Imaging, simulation, and electrostatic control of power dissipation in graphene devices
Authors:
Myung-Ho Bae,
Zhun-Yong Ong,
David Estrada,
Eric Pop
Abstract:
We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias this…
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We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs. bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provides a non-invasive approach for more deeply examining transport and energy dissipation in nanoscale devices.
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Submitted 27 June, 2010; v1 submitted 2 April, 2010;
originally announced April 2010.
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Molecular Dynamics Simulation of Thermal Boundary Conductance Between Carbon Nanotubes and SiO2
Authors:
Zhun-Yong Ong,
Eric Pop
Abstract:
We investigate thermal energy coupling between carbon nanotubes (CNTs) and SiO2 with non-equilibrium molecular dynamics simulations. The thermal boundary conductance (g) per unit CNT length is found to scale proportionally with the strength of the Van der Waals interaction (~X), with CNT diameter (~D), and as a weak power law of temperature (~T^1/3 between 200-600 K). The thermal relaxation time o…
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We investigate thermal energy coupling between carbon nanotubes (CNTs) and SiO2 with non-equilibrium molecular dynamics simulations. The thermal boundary conductance (g) per unit CNT length is found to scale proportionally with the strength of the Van der Waals interaction (~X), with CNT diameter (~D), and as a weak power law of temperature (~T^1/3 between 200-600 K). The thermal relaxation time of a single CNT on SiO2 is independent of diameter, tau ~ 85 ps. With the standard set of parameters g ~ 0.1 W/m/K for a 1.7 nm diameter CNT at room temperature. Our results are comparable to, and explain the range of experimental values for CNT-SiO2 thermal coupling from variations in diameter, temperature, or details of the surface interaction strength.
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Submitted 4 April, 2010; v1 submitted 14 October, 2009;
originally announced October 2009.
