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Critical Nature of the Size Exponent of Polymers
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
On the basis of the thermodynamic theory of the excluded volume effects, we show that the size exponent varies abruptly, depending on the change of the segment concentration. For linear polymers, the exponent changes discontinuously from $ν=3/5$ for the isolated system ($\barφ=0$) in good solvents to $ν=1/2$ in the finite concentration ($0<\barφ\le1$), while for branched polymers having…
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On the basis of the thermodynamic theory of the excluded volume effects, we show that the size exponent varies abruptly, depending on the change of the segment concentration. For linear polymers, the exponent changes discontinuously from $ν=3/5$ for the isolated system ($\barφ=0$) in good solvents to $ν=1/2$ in the finite concentration ($0<\barφ\le1$), while for branched polymers having $ν_{0}=1/4$, the corresponding exponent varies from $ν=1/2$ ($\barφ=0$) to $ν\cong 1/3$ ($0<\barφ\le1$).
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Submitted 1 March, 2024;
originally announced March 2024.
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Segment Distribution around the Center of Gravity of Ring Polymers: Extension of the Kramers Method
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
The segment distribution around the center of gravity is derived for unperturbed ring polymers. We show that, although a small difference is observed, the exact distribution can be well approximated by the Gaussian probability distribution function.
The segment distribution around the center of gravity is derived for unperturbed ring polymers. We show that, although a small difference is observed, the exact distribution can be well approximated by the Gaussian probability distribution function.
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Submitted 26 June, 2022;
originally announced June 2022.
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Size Exponents of Branched Polymers/ Extension of the Isaacson-Lubensky Formula and the Application to Lattice Trees
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
Branched polymers can be classified into two categories that obey the different formulae: \begin{equation} ν= \begin{cases} \hspace{1mm}\displaystyle\frac{2(1+ν_{0})}{d+2} & \hspace{3mm}\mbox{for polymers with}\hspace{2mm}\displaystyleν_{0}\ge\frac{1}{d+1}\hspace{10mm}\text{(I)}\\[3mm] \hspace{5mm}2ν_{0}& \hspace{3mm}\mbox{for polymers with}\hspace{2mm}\displaystyleν_{0}\le\frac{1}{d+1}\hspace{10m…
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Branched polymers can be classified into two categories that obey the different formulae: \begin{equation} ν= \begin{cases} \hspace{1mm}\displaystyle\frac{2(1+ν_{0})}{d+2} & \hspace{3mm}\mbox{for polymers with}\hspace{2mm}\displaystyleν_{0}\ge\frac{1}{d+1}\hspace{10mm}\text{(I)}\\[3mm] \hspace{5mm}2ν_{0}& \hspace{3mm}\mbox{for polymers with}\hspace{2mm}\displaystyleν_{0}\le\frac{1}{d+1}\hspace{10mm}\text{(II)} \end{cases}\notag \end{equation} for the dilution limit in good solvents. The category II covers the exceptional polymers having fully expanded configurations. On the basis of these equalities, we discuss the size exponents of the nested architectures and the lattice trees. In particular, we compare our preceding result, $ν_{d=2}=1/2$, for the $z$=2 polymer having $ν_{0}=1/4$ with the numerical result, $ν_{d=2}\doteq 0.64115$, for the lattice trees generated on the 2-dimensional lattice. Our conjecture is that while both the conclusions in polymer physics and condensed matter physics are correct, the discrepancy arises from the fact that the lattice trees are constructed from less branched architectures than the branched polymers having $ν_{0} = 1/4$ in polymer physics. The present analysis suggests that the 2-dimensional lattice trees are the mixture of isomers having the mean ideal size exponent of $\barν_{0}\doteq0.32$.
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Submitted 3 March, 2022;
originally announced March 2022.
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Branched Polymers with Excluded Volume Effects/ Configurations of Comb Polymers in Two- and Three-dimensions
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
We investigate the excluded volume effects in good solvents for the isolated comb polymers having $ν_{0}=1/4$. In particular, we investigate the change of the size exponent, $ν$, defined by $\langle s_{N}^{2}\rangle\propto N^{2ν}$, for the various fully-expanded configurations. The results show that, given the fully stretched backbone and side chains, the exponent takes the value, $ν=1/2$, irrespe…
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We investigate the excluded volume effects in good solvents for the isolated comb polymers having $ν_{0}=1/4$. In particular, we investigate the change of the size exponent, $ν$, defined by $\langle s_{N}^{2}\rangle\propto N^{2ν}$, for the various fully-expanded configurations. The results show that, given the fully stretched backbone and side chains, the exponent takes the value, $ν=1/2$, irrespective of the configurational isomerization of side chains; only the pre-exponential factor changes.
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Submitted 23 January, 2022; v1 submitted 18 December, 2021;
originally announced December 2021.
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Branched Polymers with Excluded Volume Effects/ Relationship between Polymer Dimensions and Generation Number
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
We discuss the extension of the empirical equation: $\left\langle s_{N}^{2}\right\rangle_{0}\propto g\,l^{2}$, where the subscript 0 denotes the ideal value with no excluded volume and $g$ the generation number from the root to the youngest (outermost) generation. By analogy with the linear chain problem, we introduce the assumption that the scaling relation,…
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We discuss the extension of the empirical equation: $\left\langle s_{N}^{2}\right\rangle_{0}\propto g\,l^{2}$, where the subscript 0 denotes the ideal value with no excluded volume and $g$ the generation number from the root to the youngest (outermost) generation. By analogy with the linear chain problem, we introduce the assumption that the scaling relation, $\left\langle s_{N}^{2}\right\rangle_{0}\propto g^{2λ}\,l^{2}$, exists for arbitrary polymeric architectures, where $λ$ is an exponent for the backbone structure. Then, making use of the relationship between $g$ and $N$ (monomer number), we can deduce the exponent, $ν$, for polymers with various architectures. The theory of the excluded volume effects impose the severe restriction on the quantities: $ν_{0}$, $ν$, and $λ$; for instance, the inequality, $ν_{0}\ge\frac{1}{d+1}$, must be satisfied for isolated polymers in good solvents. An intriguing question is whether or not there exists an actual molecule that violates this inequality. We take up two examples having $ν_{0}=1/4$ for $d=2$ and $ν_{0}=1/6$ for $d=3$, and discuss this question.
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Submitted 3 July, 2021; v1 submitted 16 May, 2021;
originally announced May 2021.
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Segment Distribution around the Center of Gravity of a Triangular Polymer
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
The segment distribution around the center of gravity is investigated for a special comb polymer (triangular polymer) having the side chains of the same generation number, $g$, as the main backbone. Common to all the other polymers, the radial mass distribution is expressed as the sum of the distribution functions for the end-to-end vectors, $\{\vec{r}_{Gh}\}$, from the center of gravity to the mo…
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The segment distribution around the center of gravity is investigated for a special comb polymer (triangular polymer) having the side chains of the same generation number, $g$, as the main backbone. Common to all the other polymers, the radial mass distribution is expressed as the sum of the distribution functions for the end-to-end vectors, $\{\vec{r}_{Gh}\}$, from the center of gravity to the monomers on the $h$th generation; the result being, for a large $g$, \begin{equation} \varphi_{\text{triang}}(s)=\frac{1}{N}\left\{\sum_{h=1}^{g}\left(\frac{d}{2π\left\langle r_{Gh}^{2}\right\rangle}\right)^{\frac{d}{2}}\text{Exp}\left(-\frac{d}{2\left\langle r_{Gh}^{2}\right\rangle}s^2\right)+\sum_{h=2}^{g}\sum_{j=1}^{g-h}\left(\frac{d}{2π\left\langle r_{Gh_{j}}^{2}\right\rangle}\right)^{\frac{d}{2}}\text{Exp}\left(-\frac{d}{2\left\langle r_{Gh_{j}}^{2}\right\rangle}s^2\right)\right\}\notag \end{equation} It is found that the mean square of the radius of gyration varies as $\left\langle s_{N}^{2}\right\rangle_{0}\doteq\frac{7}{15}\,g\,l^{2}$, as $g\rightarrow\infty$. Since $g\propto \sqrt{N}$ for the triangular polymer, this leads to $\left\langle s_{N}^{2}\right\rangle_{0}^{1/2}\propto N^{1/4}$, giving the same exponent as observed for the randomly branched polymer. On the basis of the present result, we put forth that all the known polymers obey the equality: $\left\langle s_{N}^{2}\right\rangle_{0}=A\, g\,l^{2}$, where $A$ is a polymer-species-dependent coefficient and also depends on the choice of the root monomer. We discuss the extension of this empirical equation.
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Submitted 27 December, 2020;
originally announced December 2020.
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Two-dimensional hole gas in organic semiconductors
Authors:
Naotaka Kasuya,
Junto Tsurumi,
Toshihiro Okamoto,
Shun Watanabe,
Jun Takeya
Abstract:
A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gas (2DEG) has been realized in conventional semiconductor interfaces, examples of two-dimensional hole gas (2DHG), which is the counter analogue of 2DEG, a…
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A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gas (2DEG) has been realized in conventional semiconductor interfaces, examples of two-dimensional hole gas (2DHG), which is the counter analogue of 2DEG, are still limited. Here, we report the observation of a 2DHG in solution-processed organic semiconductors in conjunction with an electric double-layer using ionic liquids. A molecularly flat single crystal of high mobility organic semiconductors serves as a defect-free interface that facilitates two-dimensional confinement of high-density holes. Remarkably low sheet resistance of 6 k$Ω$ and high hole gas density of 10$^{14}$ cm$^{-2}$ result in a metal-insulator transition at ambient pressure. The measured degenerated holes in the organic semiconductors provide a broad opportunity to tailor low-dimensional electronic states using molecularly engineered heterointerfaces.
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Submitted 29 October, 2020;
originally announced October 2020.
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Segment Distribution around the Center of Gravity of Branched Polymers
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
Mathematical expressions for mass distributions around the center of gravity are derived for branched polymers with the help of the Isihara formula. We introduce the Gaussian approximation for the end-to-end vector, $\vec{r}_{Gν_{i}}$, from the center of gravity to the $i$th mass point on the $ν$th arm. Then, for star polymers, the result is \begin{equation} \varphi_{star}(s)=\frac{1}{N}\sum_{ν=1}…
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Mathematical expressions for mass distributions around the center of gravity are derived for branched polymers with the help of the Isihara formula. We introduce the Gaussian approximation for the end-to-end vector, $\vec{r}_{Gν_{i}}$, from the center of gravity to the $i$th mass point on the $ν$th arm. Then, for star polymers, the result is \begin{equation} \varphi_{star}(s)=\frac{1}{N}\sum_{ν=1}^{f}\sum_{i=1}^{N_ν}\left(\frac{d}{2π\left\langle r_{Gν_{i}}^{2}\right\rangle}\right)^{d/2}\exp\left(-\frac{d}{2\left\langle r_{Gν_{i}}^{2}\right\rangle}s^{2}\right)\notag \end{equation} for a sufficiently large $N$, where $f$ denotes the number of arms. It is found that the resultant $\varphi_{star}(s)$ is, unfortunately, not Gaussian. For dendrimers \begin{equation} \varphi_{dend}(s)=\sum_{h=1}^{g}ω_{h}\left(\frac{d}{2pi\left\langle r_{G_{h}}^{2}\right\rangle}\right)^{d/2}\exp\left(-\frac{d}{2\left\langle r_{G_{h}}^{2}\right\rangle}s^{2}\right)\notag \end{equation} where $ω_{h}$ denotes the weight fraction of masses in the $h$th generation on a dendrimer constructed from $g$ generations, so that $\sum_{h=1}^{g}ω_{h}=1$. To be specific, $ω_{1}=1/N$ and $ω_{h}=(f-1)^{h-2}/N$ for $h\ge 2$. These distributions can be described by the same grand sum of each Gaussian function for the end-to-end distance from the center of gravity to each mass point. Note that for a large $f$ and $g$, the statistical weight of younger generations becomes dominant. As a consequence, the mass distribution of unperturbed dendrimers approaches the Gaussian form in the limit of a large $f$ and $g$. It is shown that the radii of gyration of dendrimers increase logarithmically with $N$, which leading to the exponent, $ν_{0}=0$. An example of randomly branched polymers is also discussed.
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Submitted 12 June, 2020;
originally announced June 2020.
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Topological effects of three-dimensional porous graphene on Dirac quasiparticles
Authors:
Takuya Okamoto,
Yoshikazu Ito,
Naoka Nagamura,
Keishi Akada,
Takeshi Fujita,
Yukio Kawano
Abstract:
This paper reports on the topological effects of three-dimensional (3D) porous graphene with tunable pore sizes and a preserved 2D graphene system of Dirac quasiparticles on its electrical properties. This 3D architecture is characterized by the intrinsic curvature of smoothly interconcnected graphene sheets without edges, the structures and properties of which can be controlled with its pore size…
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This paper reports on the topological effects of three-dimensional (3D) porous graphene with tunable pore sizes and a preserved 2D graphene system of Dirac quasiparticles on its electrical properties. This 3D architecture is characterized by the intrinsic curvature of smoothly interconcnected graphene sheets without edges, the structures and properties of which can be controlled with its pore sizes. The impact of pore size on the electrical transport properties was investigated through magnetoresistance measurements. We observed that 3D graphene with small pores exhibits transitioning to weak localization with decreasing temperature. The comparison with the theory based on the quantum correction clarified that an increase in the intrinsic curvature significantly induces the intervalley scattering event, which breaks the chirality. This increase in the intervalley scattering rate originates from the unique topological effects of 3D graphene, i.e., the topological defects required to form the high curvature and the resulting chirality mixing. We also discuss the scattering processes due to microscopic chemical bonding states as found by high spatial-resolved X-ray photoemission spectral imaging, to support the validity of our finding.
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Submitted 18 February, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Anti-crossing properties of strong coupling system of silver nanoparticle dimers coated with thin dye molecular films analyzed by classical electromagnetism
Authors:
Tamitake Itoh,
Yuko S. Yamamoto,
Takayuki Okamoto
Abstract:
The evidence of strong coupling between plasmons and molecular excitons for plasmonic nanoparticle (NP) dimers exhibiting ultra-sensitive surface enhanced resonant Raman scattering is the observation of anti-crossing in the coupled resonance. However, it is not easy to experimentally tune plasmon resonance of such dimers for the observation. In this work, we theoretically investigate the anti-cros…
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The evidence of strong coupling between plasmons and molecular excitons for plasmonic nanoparticle (NP) dimers exhibiting ultra-sensitive surface enhanced resonant Raman scattering is the observation of anti-crossing in the coupled resonance. However, it is not easy to experimentally tune plasmon resonance of such dimers for the observation. In this work, we theoretically investigate the anti-crossing properties of the dimers coated by the thin dye films with thicknesses greater than 0.1 nm and gap distances larger than 1.2 nm according to the principles of classical electromagnetism. The plasmon resonance spectra of these dimers are strongly affected by their coupling with the exciton resonance of dye molecules. A comparison of the film thickness dependences of dimer spectral changes with those of silver ellipsoidal NPs indicates that the dipole plasmons localized in the dimer gap are coupled with molecular excitons of the film much stronger than the dipole plasmons of ellipsoidal NPs. Furthermore, the anti-crossing of coupled resonances is investigated while tuning plasmon resonance by changing the morphology and refractive index of the surrounding medium. The spectral changes observed for ellipsoidal NPs clearly exhibit anti-crossing properties; however, the anti-crossing behavior of dimers is more complex due to the strong coupling of dipoles and higher order plasmons with multiple molecular excitons. We find that the anti-crossing for dimers is clearly confirmed by the refractive index dependence of coupled resonance.
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Submitted 19 November, 2019;
originally announced November 2019.
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Terahertz Raman spectroscopy probe of intermolecular vibration in high-mobility organic semiconductors under uniaxial strain
Authors:
Junto Tsurumi,
Takayoshi Kubo,
Hiroyuki Ishii,
Masato Mitani,
Toshihiro Okamoto,
Shun Watanabe,
Jun Takeya
Abstract:
Terahertz Raman spectroscopy was performed on high-mobility organic single-crystal semiconductors, by which the phonon energy at the Gamma point was qualified as a function of external uniaxial strain. The observation of peak shifts in Raman modes under uniaxial strain revealed that application of an external strain can effectively tune the intermolecular vibration that particularly correlates ele…
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Terahertz Raman spectroscopy was performed on high-mobility organic single-crystal semiconductors, by which the phonon energy at the Gamma point was qualified as a function of external uniaxial strain. The observation of peak shifts in Raman modes under uniaxial strain revealed that application of an external strain can effectively tune the intermolecular vibration that particularly correlates electron-phonon coupling. Terahertz Raman spectroscopy conducted in conjunction with molecular dynamics simulation provides an in-depth understanding of the recently discovered very large strain effect on charge conduction in high-mobility organic semiconductors.
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Submitted 3 May, 2019;
originally announced May 2019.
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Diffusion and Chemical Potential in Polymer Solutions
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiichi Inayama,
Toshihiko Okamoto
Abstract:
We give a mathematical proof for the preceding derivation of the excluded volume theory on the basis of the thermodynamic theory, the concept of diffusion, and the theory of total differential.
We give a mathematical proof for the preceding derivation of the excluded volume theory on the basis of the thermodynamic theory, the concept of diffusion, and the theory of total differential.
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Submitted 10 March, 2019;
originally announced March 2019.
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Alternative Approach to the Excluded Volume Problem The Critical Behavior of the Exponent $ν$
Authors:
Kazumi Suematsu,
Haruo Ogura,
Seiiti Inayama,
Toshihiko Okamoto
Abstract:
We present the alternative derivation of the excluded volume equation. The resulting equation is mathematically identical to the one proposed in the preceding paper. As a result, the theory reproduces well the observed points by SANS (small angle neutron scattering) experiments. The equation is applied to the coil-globule transition of branched molecules. It is found that in the entire region of p…
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We present the alternative derivation of the excluded volume equation. The resulting equation is mathematically identical to the one proposed in the preceding paper. As a result, the theory reproduces well the observed points by SANS (small angle neutron scattering) experiments. The equation is applied to the coil-globule transition of branched molecules. It is found that in the entire region of poor solvent regimes ($T<Θ$), the exponent $κ=d\logα\,/\,d\log N\, (N\rightarrow\infty)$ takes the value $\frac{1}{12}$, showing that contrary to the case of linear molecules ($κ=-\frac{1}{6}$), the expansion factor increases indefinitely as $N$ increases. The theory is then applied to concentrated systems in good solvents. It is found that for the entire region of $0<\barφ\le 1$, the gradients $κ$ seem to converge on a common value lying somewhere from $κ=\frac{1}{12}$ to $0.1$. Since $ν_{dilute}=\tfrac{1}{2}$, $ν_{melt}=\tfrac{1}{3}$, and $0.33\cdots\leν_{conc}\,(=ν_{0}+κ) <0.35$ for $0<\barφ\le 1$, the simulation results suggest that the exponents $κ$ and $ν$ change abruptly from phases to phases; there are no intermediate values between them, for instance between $ν_{dilute}$ and $ν_{melt}$.
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Submitted 18 November, 2018;
originally announced November 2018.
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Force-detected high-frequency electron spin resonance spectroscopy using magnet-mounted nanomembrane: robust detection of thermal magnetization modulation
Authors:
Hideyuki Takahashi,
Tsubasa Okamoto,
Kento Ishimura,
Shigeo Hara,
Eiji Ohmichi,
Hitoshi Ohta
Abstract:
In this study, we report a conceptually novel broadband high-frequency electron spin resonance (HFESR) spectroscopic technique. In contrast to the ordinary force-detected ESR technique, which detects the magnetization change due to the saturation effect, this method measures the magnetization change due to the change of the sample temperature at resonance. To demonstrate its principle, we develope…
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In this study, we report a conceptually novel broadband high-frequency electron spin resonance (HFESR) spectroscopic technique. In contrast to the ordinary force-detected ESR technique, which detects the magnetization change due to the saturation effect, this method measures the magnetization change due to the change of the sample temperature at resonance. To demonstrate its principle, we developed a silicon nitride nanomembrane-based force-detected ESR spectrometer, which can be stably operated even at high magnetic fields. Test measurements were performed for samples with different spin relaxation times. We succeeded in obtaining a seamless ESR spectrum in magnetic fields of 15~T and frequencies of 636~GHz without significant spectral distortion. A high spin sensitivity of $10^{12}$~spins/G$\cdot$s was obtained, which was independent of the spin relaxation time. These results show that this technique can be used as a practical method in research fields where the HFESR technique is applicable.
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Submitted 1 August, 2018; v1 submitted 10 April, 2018;
originally announced April 2018.
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Effect of Parallel Magnetic Field on Superconductivity of Ultrathin Metal Films Grown on a Cleaved GaAs Surface
Authors:
Takayuki Sekihara,
Takahiro Miyake,
Ryuichi Masutomi,
Tohru Okamoto
Abstract:
The parallel-magnetic-field $H_\parallel$ dependence of the superconducting transition temperature $T_c$ is studied for ultrathin films of In, Bi, and Al grown on GaAs(110). In the case of In films in the monolayer regime, $T_c$ exhibits a quadratic-like $H_\parallel$ dependence, which is one order of magnitude stronger than that previously observed in monolayer Pb films by the present authors [Ph…
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The parallel-magnetic-field $H_\parallel$ dependence of the superconducting transition temperature $T_c$ is studied for ultrathin films of In, Bi, and Al grown on GaAs(110). In the case of In films in the monolayer regime, $T_c$ exhibits a quadratic-like $H_\parallel$ dependence, which is one order of magnitude stronger than that previously observed in monolayer Pb films by the present authors [Phys. Rev. Lett. 111, 057005 (2013)]. The results are well reproduced by a model developed for an inhomogeneous two-dimensional superconducting state in the presence of a moderate Rashba spin-orbit interaction. The Rashba spin splitting is estimated to be 0.04 eV, which is much smaller than that expected for monolayer Pb films. In a few-monolayer Bi film, the suppression of $T_c$ with increasing $H_\parallel$ is comparable to that in monolayer Pb films. On the other hand, much stronger suppression, which is attributed to the Pauli paramagnetic effect, was observed for the Al film.
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Submitted 23 October, 2017;
originally announced October 2017.
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Magnetic-Field-Induced Superconductivity in Ultrathin Pb Films with Magnetic Impurities
Authors:
Masato Niwata,
Ryuichi Masutomi,
Tohru Okamoto
Abstract:
It is well known that external magnetic fields and magnetic moments of impurities both suppress superconductivity. Here, we demonstrate that their combined effect enhances the superconductivity of a few atomic layer thick Pb films grown on a cleaved GaAs(110) surface. A Ce-doped film, where superconductivity is totally suppressed at zero-field, actually turns superconducting when an external magne…
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It is well known that external magnetic fields and magnetic moments of impurities both suppress superconductivity. Here, we demonstrate that their combined effect enhances the superconductivity of a few atomic layer thick Pb films grown on a cleaved GaAs(110) surface. A Ce-doped film, where superconductivity is totally suppressed at zero-field, actually turns superconducting when an external magnetic field is applied parallel to the conducting plane. For films with Mn adatoms, the screening of the magnetic moment by conduction electrons, i.e., the Kondo singlet formation, becomes important. We found that the degree of screening can be reduced by cap** the Pb film with a Au layer, and observed the positive magnetic field dependence of the superconducting transition temperature.
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Submitted 18 December, 2017; v1 submitted 23 October, 2017;
originally announced October 2017.
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Hybrid plasmonic-photonic crystal formed on gel-immobilized colloidal crystal via solvent substitutio
Authors:
Sho Kawakami,
Atsushi Mori,
Ken Nagashima,
Masanobu Haraguchi,
Toshihiro Okamoto
Abstract:
Gel-immobilized colloidal crystals were prepared to obtain hybrid plasmonic-photonic crystals, in which electric field enhancement to a greater extent than that due to localized surface plasmons (LSP) alone was expected due to coupling between LSP and the photonic band. Polystyrene colloidal crystals immobilized by the N-(hydroxymethyl)acrylamide gel were immersed in an aqueous dispersion of gold…
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Gel-immobilized colloidal crystals were prepared to obtain hybrid plasmonic-photonic crystals, in which electric field enhancement to a greater extent than that due to localized surface plasmons (LSP) alone was expected due to coupling between LSP and the photonic band. Polystyrene colloidal crystals immobilized by the N-(hydroxymethyl)acrylamide gel were immersed in an aqueous dispersion of gold nanoparticles (AuNPs). Then, the gel-immobilized colloidal crystals were picked out and immersed in an ionic liquid mixture. The surfaces of the gel-immobilized colloidal crystals immersed in the AuNP dispersion were observed via scanning electron microscopy after this solvent substitution. The lattice spacing of the colloidal crystal varied as the composition of the ionic liquid mixture was changed. The composition was determined so that the photonic band gap wavelength coincided with the LSP wavelength. Further, the reflection spectra were measured. Thus, we successfully prepared a hybrid plasmonic-photonic crystal.
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Submitted 26 November, 2016;
originally announced November 2016.
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In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Authors:
Tasuku Chiba,
Ryuichi Masutomi,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexp…
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Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.
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Submitted 10 July, 2013;
originally announced July 2013.
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Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field
Authors:
Takayuki Sekihara,
Ryuichi Masutomi,
Tohru Okamoto
Abstract:
Two dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14 T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular magnetic field dependence of the sheet resistance is al…
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Two dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14 T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular magnetic field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitting.
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Submitted 2 August, 2013; v1 submitted 10 July, 2013;
originally announced July 2013.
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Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Authors:
Ryuichi Masutomi,
Kohei Sasaki,
Ippei Yasuda,
Akihito Sekine,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K…
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Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition.
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Submitted 24 May, 2011;
originally announced May 2011.
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Optical Hall Effect in the Integer Quantum Hall Regime
Authors:
Yohei Ikebe,
Takahiro Morimoto,
Ryuichi Masutomi,
Tohru Okamoto,
Hideo Aoki,
Ryo Shimano
Abstract:
Optical Hall conductivity $σ_{xy}(ω)$ is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle ($\sim$ fine structure constant $\sim$ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateau-like structure around the Landau-level filling $ν=2$. The result, which fits wit…
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Optical Hall conductivity $σ_{xy}(ω)$ is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle ($\sim$ fine structure constant $\sim$ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateau-like structure around the Landau-level filling $ν=2$. The result, which fits with the behavior expected from the carrier localization effect in the ac regime, indicates that the plateau structure, although not quantized, still exists in the terahertz regime.
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Submitted 24 June, 2010; v1 submitted 2 April, 2010;
originally announced April 2010.
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Nonequilibrium energetics of a single F1-ATPase molecule
Authors:
Shoichi Toyabe,
Tetsuaki Okamoto,
Takahiro Watanabe-Nakayama,
Hiroshi Taketani,
Seishi Kudo,
Eiro Muneyuki
Abstract:
Molecular motors drive mechanical motions utilizing the free energy liberated from chemical reactions such as ATP hydrolysis. Although it is essential to know the efficiency of this free energy transduction, it has been a challenge due to the system's microscopic scale. Here, we evaluate the single-molecule energetics of a rotary molecular motor, F1-ATPase, by applying a recently derived nonequi…
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Molecular motors drive mechanical motions utilizing the free energy liberated from chemical reactions such as ATP hydrolysis. Although it is essential to know the efficiency of this free energy transduction, it has been a challenge due to the system's microscopic scale. Here, we evaluate the single-molecule energetics of a rotary molecular motor, F1-ATPase, by applying a recently derived nonequilibrium equality together with an electrorotation method. We show that the sum of the heat flow through the probe's rotational degree of freedom and the work against external load is almost equal to the free energy change per a single ATP hydrolysis under various conditions. This implies that F1-ATPase works at an efficiency of nearly 100% in a thermally fluctuating environment.
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Submitted 9 February, 2010;
originally announced February 2010.
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Well-width dependence of valley splitting in Si/SiGe quantum wells
Authors:
Kohei Sasaki,
Ryuichi Masutomi,
Kiyohiko Toyama,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the…
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The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.
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Submitted 3 December, 2009; v1 submitted 10 November, 2009;
originally announced November 2009.
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Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
Authors:
Tohru Okamoto,
Kohei Sasaki,
Kiyohiko Toyama,
Ryuichi Masutomi,
Kentarou Sawano,
Yasuhiro Shiraki
Abstract:
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or hol…
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We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.
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Submitted 3 June, 2009; v1 submitted 3 March, 2009;
originally announced March 2009.
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Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
Authors:
Toshimitsu Mochizuki,
Ryuichi Masutomi,
Tohru Okamoto
Abstract:
Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for…
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Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for a coverage of 0.42 monolayer. These features are associated with spin-glass ordering in the Fe film.
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Submitted 4 January, 2009; v1 submitted 24 October, 2008;
originally announced October 2008.
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Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces
Authors:
Masaaki Minowa,
Ryuichi Masutomi,
Toshimitsu Mochizuki,
Tohru Okamoto
Abstract:
Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared t…
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Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared to those of previous photoelectron spectroscopy measurements.
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Submitted 3 June, 2008; v1 submitted 31 March, 2008;
originally announced March 2008.
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Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
Authors:
Kiyohiko Toyama,
Takahisa Nishioka,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak…
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Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.
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Submitted 2 July, 2008; v1 submitted 26 February, 2008;
originally announced February 2008.
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Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect
Authors:
Ryuichi Masutomi,
Masayuki Hio,
Toshimitsu Mochizuki,
Tohru Okamoto
Abstract:
We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperatur…
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We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems.
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Submitted 6 April, 2007; v1 submitted 26 March, 2007;
originally announced March 2007.
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Ettingshausen Effect around Landau Level Filling Factor nu=3 Studied by Dynamic Nuclear Polarization
Authors:
Yosuke Komori,
Satoru Sakuma,
Tohru Okamoto
Abstract:
Spin current perpendicular to the electric current is investigated around Landau level filling factor $ν=3$ in a GaAs/AlGaAs two-dimensional electron system. Measurements of dynamic nuclear polarization in the vicinity of the edge of a specially designed Hall bar sample indicate that the direction of the spin current with respect to the Hall electric field reverses its polarity at $ν=3$, where t…
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Spin current perpendicular to the electric current is investigated around Landau level filling factor $ν=3$ in a GaAs/AlGaAs two-dimensional electron system. Measurements of dynamic nuclear polarization in the vicinity of the edge of a specially designed Hall bar sample indicate that the direction of the spin current with respect to the Hall electric field reverses its polarity at $ν=3$, where the dissipative current carried by holes in the spin up Landau level is replaced with that by electrons in the spin down Landau level.
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Submitted 9 October, 2007; v1 submitted 13 March, 2007;
originally announced March 2007.
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Dynamic nuclear polarization induced by hot electrons
Authors:
Yosuke Komori,
Tohru Okamoto
Abstract:
A new method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor $ν=3$. Using a narrow channel sample, where the width varies stepwise along the electron flow, we find that electron cooling (heating) causes the polarization of nuclear spins against (toward) the external magnetic field at liquid helium temperatures. The longit…
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A new method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor $ν=3$. Using a narrow channel sample, where the width varies stepwise along the electron flow, we find that electron cooling (heating) causes the polarization of nuclear spins against (toward) the external magnetic field at liquid helium temperatures. The longitudinal nuclear spin relaxation rate varies exponentially with inverse temperature.
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Submitted 4 October, 2006;
originally announced October 2006.
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Electrically detected electron spin resonance in a high mobility silicon quantum well
Authors:
Junya Matsunami,
Mitsuaki Ooya,
Tohru Okamoto
Abstract:
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 i…
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The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T_1.
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Submitted 7 July, 2006; v1 submitted 2 December, 2005;
originally announced December 2005.
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Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system
Authors:
Mitsuaki Ooya,
Kiyohiko Toyama,
Tohru Okamoto
Abstract:
We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $ρ_{xx}$ has an activated temperature dependence. The angle of the magnetic field was controlled so as to study the orbital effect proportional to the perpendicular component $B_\perp$ for various total strengths $B_{\rm tot}$. A dip in $ρ_{xx}$, w…
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We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $ρ_{xx}$ has an activated temperature dependence. The angle of the magnetic field was controlled so as to study the orbital effect proportional to the perpendicular component $B_\perp$ for various total strengths $B_{\rm tot}$. A dip in $ρ_{xx}$, which corresponds to the Landau level filling factor of $ν=4$, survives even for high resistivity of $ρ_{xx} \sim 10^8 Ω$ at $T= 150 {\rm mK}$. The linear $B_{\rm tot}$-dependence of the value of $B_\perp$ at the dip for low $B_{\rm tot}$ indicates that a ferromagnetic instability does not occur even in the far insulating regime.
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Submitted 6 July, 2005;
originally announced July 2005.
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Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect
Authors:
Yukihide Tsuji,
Toshimitsu Mochizuki,
Tohru Okamoto
Abstract:
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudina…
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Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two-dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.
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Submitted 6 July, 2005; v1 submitted 6 July, 2005;
originally announced July 2005.
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Observation of the Ettingshausen effect in quantum Hall systems
Authors:
Yosuke Komori,
Tohru Okamoto
Abstract:
Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel shows remarkable asymmetric behaviors which indicate an electron temperature difference between the edges. The sign of the difference depends on the direction o…
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Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel shows remarkable asymmetric behaviors which indicate an electron temperature difference between the edges. The sign of the difference depends on the direction of the electric current and the polarity of the magnetic field. The results are consistent with the recent theory of Akera.
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Submitted 2 December, 2005; v1 submitted 21 July, 2004;
originally announced July 2004.
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Expansion of Vortex Cores by Strong Electronic Correlation in La$_{2-x}$Sr$_x$CuO$_4$ at Low Magnetic Induction
Authors:
R. Kadono,
W. Higemoto,
A. Koda,
M. I. Larkin,
G. M. Luke,
A. T. Savici,
Y. J. Uemura,
K. M. Kojima,
T. Okamoto,
T. Kakeshita,
S. Uchida,
T. Ito,
K. Oka,
M. Takigawa,
M. Ichioka,
K. Machida
Abstract:
The vortex core radius \rv, defined as the peak position of the supercurrent around the vortex, has been determined by muon spin rotation measurements in the mixed state of \lscox for $x=0.13$, 0.15, and 0.19. At lower do** (x=0.13 and 0.15), \rv(T) increases with decreasing temperature T, which is opposite to the behavior predicted by the conventional theory. Moreover, \rv(T\to0) is significa…
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The vortex core radius \rv, defined as the peak position of the supercurrent around the vortex, has been determined by muon spin rotation measurements in the mixed state of \lscox for $x=0.13$, 0.15, and 0.19. At lower do** (x=0.13 and 0.15), \rv(T) increases with decreasing temperature T, which is opposite to the behavior predicted by the conventional theory. Moreover, \rv(T\to0) is significantly larger than the Ginsburg-Landau coherence length determined by the upper critical field, and shows a clear tendency to decrease with increasing the do** x. These features can be qualitatively reproduced in a microscopic model involving antiferromagnetic electronic correlations.
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Submitted 3 February, 2004;
originally announced February 2004.
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Spin polarization and metallic behavior of a silicon two-dimensional electron system
Authors:
Tohru Okamoto,
Mitsuaki Ooya,
Kunio Hosoya,
Shinji Kawaji
Abstract:
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields wher…
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We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of the spin susceptibility is consistent with that in Si-MOS structures. Temperature dependence of resistivity remains metallic even in strong magnetic fields where the spin degree of freedom is frozen out. We also found a magnetoresistance anisotropy with respect to an angle between the current and the in-plane magnetic field.
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Submitted 2 December, 2005; v1 submitted 22 July, 2003;
originally announced July 2003.
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Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems
Authors:
Tohru Okamoto,
K. Hosoya,
S. Kawaji,
A. Yagi,
A. Yutani,
Y. Shiraki
Abstract:
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by ro…
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Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.
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Submitted 29 June, 1999;
originally announced June 1999.
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Spin Degree of Freedom in a Two-Dimensional Electron Liquid
Authors:
Tohru Okamoto,
Kunio Hosoya,
Shinji Kawaji,
Atsuo Yagi
Abstract:
We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By rotating the sample at various t…
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We have investigated correlation between spin polarization and magnetotransport in a high mobility silicon inversion layer which shows the metal-insulator transition. Increase in the resistivity in a parallel magnetic field reaches saturation at the critical field for the full polarization evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By rotating the sample at various total strength of the magnetic field, we found that the normal component of the magnetic field at minima in the diagonal resistivity increases linearly with the concentration of ``spin-up'' electrons.
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Submitted 5 April, 1999;
originally announced April 1999.
