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Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures
Authors:
N. Fang,
Y. R. Chang,
S. Fujii,
D. Yamashita,
M. Maruyama,
Y. Gao,
C. F. Fong,
D. Kozawa,
K. Otsuka,
K. Nagashio,
S. Okada,
Y. K. Kato
Abstract:
The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of tw…
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The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm single-photon emission. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.
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Submitted 28 July, 2023;
originally announced July 2023.
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Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes
Authors:
N. Fang,
D. Yamashita,
S. Fujii,
M. Maruyama,
Y. Gao,
Y. R. Chang,
C. F. Fong,
K. Otsuka,
K. Nagashio,
S. Okada,
Y. K. Kato
Abstract:
Nanomaterials exhibit unique optical phenomena, in particular excitonic quantum processes occurring at room temperature. The low dimensionality, however, imposes strict requirements for conventional optical excitation, and an approach for bypassing such restrictions is desirable. Here we report on exciton transfer in carbon-nanotube/tungsten-diselenide heterostructures, where band alignment can be…
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Nanomaterials exhibit unique optical phenomena, in particular excitonic quantum processes occurring at room temperature. The low dimensionality, however, imposes strict requirements for conventional optical excitation, and an approach for bypassing such restrictions is desirable. Here we report on exciton transfer in carbon-nanotube/tungsten-diselenide heterostructures, where band alignment can be systematically varied. The mixed-dimensional heterostructures display a pronounced exciton reservoir effect where the longer-lifetime excitons within the two-dimensional semiconductor are funneled into carbon nanotubes through diffusion. This new excitation pathway presents several advantages, including larger absorption areas, broadband spectral response, and polarization-independent efficiency. When band alignment is resonant, we observe substantially more efficient excitation via tungsten diselenide compared to direct excitation of the nanotube. We further demonstrate simultaneous bright emission from an array of carbon nanotubes with varied chiralities and orientations. Our findings show the potential of mixed-dimensional heterostructures and band alignment engineering for energy harvesting and quantum applications through exciton manipulation.
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Submitted 13 July, 2023;
originally announced July 2023.
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Unconventional gapless semiconductor in an extended martini lattice in covalent honeycomb materials
Authors:
Tomonari Mizoguchi,
Yanlin Gao,
Mina Maruyama,
Yasuhiro Hatsugai,
Susumu Okada
Abstract:
We study characteristic electronic structures in an extended martini lattice model and propose its materialization in $π$-electron networks constructed by designated chemisorption on graphene and silicene. By investigating the minimal tight-binding model, we reveal rich electronic structures tuned by the ratio of hop** parameters, ranging from the band insulator to the unconventional gapless sem…
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We study characteristic electronic structures in an extended martini lattice model and propose its materialization in $π$-electron networks constructed by designated chemisorption on graphene and silicene. By investigating the minimal tight-binding model, we reveal rich electronic structures tuned by the ratio of hop** parameters, ranging from the band insulator to the unconventional gapless semiconductor. Remarkably, the unconventional gapless semiconductor is characterized by a flat band at the Fermi level. Further, the density functional theory calculations for candidate materials reveal that the characteristic electronic structures can be realized by designated chemisorption or chemical substitution on graphene and silicene, and that the electronic structure near the Fermi level is tunable by the choice of the atomic species of adsorbed atoms. Our results open the way to search exotic electronic structures and their functionalities induced by an extended martini lattice.
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Submitted 15 March, 2023; v1 submitted 1 September, 2022;
originally announced September 2022.
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Two-dimensional atomic-scale ultrathin lateral heterostructures
Authors:
Nanami Ichinose,
Mina Maruyama,
Takato Hotta,
Zheng Liu,
Ruben Canton-Vitoria,
Susumu Okada,
Fanyu Zeng,
Feng Zhang,
Takashi Taniguchi,
Kenji Watanabe,
Ryo Kitaura
Abstract:
Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of lateral heterostructures range from several nanometers to single-atom thickness, the thinnest heterojunction in theory. The interfaces are atomically flat with minima…
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Ultrathin lateral heterostructures of monolayer MoS2 and WS2 have successfully been realized with the metal-organic chemical vapor deposition method. Atomic-resolution HAADF-STEM observations have revealed that the junction widths of lateral heterostructures range from several nanometers to single-atom thickness, the thinnest heterojunction in theory. The interfaces are atomically flat with minimal mixing between MoS2 and WS2, originating from rapid and abrupt switching of the source supply. Due to one-dimensional interfaces and broken rotational symmetry, the resulting ultrathin lateral heterostructures, 1~2 mixed-dimensional structures, can show emergent optical/electronic properties. The MOCVD growth developed in this work allows us to access various ultrathin lateral heterostructures, leading to future exploration of their emergent properties absent in each component alone.
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Submitted 4 October, 2022; v1 submitted 26 August, 2022;
originally announced August 2022.
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A Versatile Post-Do** Towards Two-Dimensional Semiconductors
Authors:
Y. Murai,
S. Zhang,
T. Hotta,
Z. Liu,
Y. Miyata,
T. Irisawa,
Y. Gao,
M. Maruyama,
S. Okada,
H. Mogi,
T. Sato,
S. Yoshida,
H. Shigekawa,
Takashi Taniguchi,
Kenji Watanabe,
R. Kitaura
Abstract:
We have developed a simple and straightforward way to realize controlled post-do** towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional do** with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected t…
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We have developed a simple and straightforward way to realize controlled post-do** towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional do** with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. Electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change, p-type action with more than two orders of magnitude increase in on current. Position-selective do** has also been demonstrated by the post-do** toward TMDs with a patterned mask on the surface. The post-do** method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.
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Submitted 19 May, 2021; v1 submitted 7 May, 2021;
originally announced May 2021.
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Photoluminescence from Single-Walled MoS$_2$ Nanotubes Coaxially Grown on Boron Nitride Nanotubes
Authors:
Ming Liu,
Kaoru Hisama,
Yongjia Zheng,
Mina Maruyama,
Seungju Seo,
Anton Anisimov,
Taiki Inoue,
Esko I. Kauppinen,
Susumu Okada,
Shohei Chiashi,
Rong Xiang,
Shigeo Maruyama
Abstract:
Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observ…
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Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS$_2$ nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS$_2$ nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS$_2$ nanotubes, the PL signal is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS$_2$ nanotubes were examined through characterizations by PL, XPS, and Raman spectroscopy. Unlike the single-walled MoS$_2$ nanotubes, multi-walled MoS$_2$ nanotubes do not emit light. Single- and multi-walled MoS$_2$ nanotubes exhibit different Raman features in both resonant and non-resonant Raman spectra. The method of assembling heteronanotubes using BNNTs as templates provides an efficient approach for exploring the electronic and optical properties of other transition metal dichalcogenide nanotubes.
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Submitted 18 December, 2020;
originally announced December 2020.
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Indirect-to-direct band gap crossover of single walled MoS$_2$ nanotubes
Authors:
Kaoru Hisama,
Mina Maruyama,
Shohei Chiashi,
Shigeo Maruyama,
Susumu Okada
Abstract:
Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is sensitive to the NT diameter: armchair MoS$_2$ NTs act as indirect gap semiconductors for diameters up to approximately 5.0 nm, while armchair MoS$_2$ NTs with l…
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Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is sensitive to the NT diameter: armchair MoS$_2$ NTs act as indirect gap semiconductors for diameters up to approximately 5.0 nm, while armchair MoS$_2$ NTs with larger diameters act as direct gap semiconductors with band edges located in the vicinity of $k = 2π/3$. This finding implies that MoS$_2$ NTs with large diameters should exhibit similar photoluminescence to 2D monolayer MoS$_2$ sheets. This indirect-to-direct band gap crossover is ascribed to the upward shift of the valence band peak at the $Γ$ point in small diameter NTs, which is caused by the tensile strain resulting from their tubular structures.
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Submitted 18 November, 2020;
originally announced November 2020.
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Microscopic mechanism of van der Waals heteroepitaxy in the formation of MoS2/hBN vertical heterostructures
Authors:
Mitsuhiro Okada,
Mina Maruyama,
Susumu Okada,
Jamie H. Warner,
Yusuke Kureishi,
Yosuke Uchiyama,
Takashi Taniguchi,
Kenji Watanabe,
Tetsuo Shimizu,
Toshitaka Kubo,
Hisanori Shinohara,
Ryo Kitaura
Abstract:
Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes strong limitation on orientation of grains is still not understood yet. In this work, we have focused…
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Recent works have revealed that van der Waals (vdW) epitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes strong limitation on orientation of grains is still not understood yet. In this work, we have focused on investigation of mechanism of self-alignment of MoS2 grains in vdW epitaxial growth on hBN. Through calculation based on density functional theory and the Lennard-Jones potential, we found that interaction energy between MoS2 and hBN strongly depends both on size and orientation of MoS2. We also found that, when size of MoS2 is ca. 40 nm, rotational energy barrier can exceed ~ 1 eV, which should suppress rotation to limit orientation of MoS2 even at growth temperature.
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Submitted 5 May, 2020; v1 submitted 27 April, 2020;
originally announced April 2020.
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Merged-log-concavity of rational functions, almost strictly unimodal sequences, and phase transitions of ideal boson-fermion gases
Authors:
So Okada
Abstract:
We obtain some new results on the unimodal sequences of the real values of rational functions by polynomials with positive integer coefficients. Thus, we introduce the notion of merged-log-concavity of rational functions. Roughly speaking, the notion extends Stanley's $q$-log-concavity of polynomials.
We construct explicit merged-log-concave rational functions by $q$-binomial coefficients, Hadam…
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We obtain some new results on the unimodal sequences of the real values of rational functions by polynomials with positive integer coefficients. Thus, we introduce the notion of merged-log-concavity of rational functions. Roughly speaking, the notion extends Stanley's $q$-log-concavity of polynomials.
We construct explicit merged-log-concave rational functions by $q$-binomial coefficients, Hadamard products, and convolutions, extending the Cauchy-Binet formula. Then, we obtain the unimodal sequences of rational functions by Young diagrams. Moreover, we consider the variation of unimodal sequences by critical points that separate strictly increasing, strictly decreasing, and hill-shape sequences among almost strictly unimodal sequences. Also, the critical points are zeros of polynomials in a suitable setting.
The study above extends the $t$-power series of $(\pm t;q)_{\infty}^{\mp 1}$ to some extent by polynomials with positive integer coefficients and the variation of unimodal sequences. We then obtain the golden ratio of quantum dilogarithms ($q$-exponentials) as a critical point. Additionally, we consider eta products, generalized Narayana numbers, and weighted $q$-multinomial coefficients, which we introduce.
In statistical mechanics, we discuss the grand canonical partition functions of some ideal boson-fermion gases with or without Casimir energies (Ramanujan summation). The merged-log-concavity gives phase transitions on Helmholtz free energies by critical points of the metallic ratios including the golden ratio. In particular, the phase transitions implies non-zero particle vacua from zero particle vacua as the temperature rises.
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Submitted 30 January, 2024; v1 submitted 4 March, 2020;
originally announced March 2020.
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Momentum selective optical absorption in triptycene molecular membrane
Authors:
Masashi Akita,
Yasumaru Fujii,
Mina Maruyama,
Susumu Okada,
Katsunori Wakabayashi
Abstract:
The optical properties of triptycene molecular membranes (TMMs) under the linearly and circularly polarized light irradiation have been theoretically studied. Since TMMs have the double-layered Kagome lattice structures for their $π$-electrons, i.e., tiling of trigonal and hexagonal-symmetric rings, the electronic band structures of TMMs have non-equivalent Dirac cones and perfect flat bands. By c…
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The optical properties of triptycene molecular membranes (TMMs) under the linearly and circularly polarized light irradiation have been theoretically studied. Since TMMs have the double-layered Kagome lattice structures for their $π$-electrons, i.e., tiling of trigonal and hexagonal-symmetric rings, the electronic band structures of TMMs have non-equivalent Dirac cones and perfect flat bands. By constructing the tight-binding model to describe the pi-electronic states of TMMs, we have evaluated the optical absorption intensities and valley selective excitation of TMMs based on the Kubo formula. It is found that absorption intensities crucially depend on both light polarization angle and the excitation position in momentum space, i.e., the momentum and valley selective optical excitation. The polarization dependence and optical selection rules are also clarified by using group theoretical analyses.
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Submitted 8 February, 2020;
originally announced February 2020.
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Flat bands and higher-order topology in polymerized triptycene: Tight-binding analysis on decorated star lattices
Authors:
Tomonari Mizoguchi,
Mina Maruyama,
Susumu Okada,
Yasuhiro Hatsugai
Abstract:
In a class of carbon-based materials called polymerized triptycene, which consist of triptycene molecules and phenyls, exotic electronic structures such as Dirac cones and flat bands arise from the kagome-type network. In this paper, we theoretically investigate the tight-binding models for polymerized triptycene, focusing on the origin of flat bands and the topological properties. The mechanism o…
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In a class of carbon-based materials called polymerized triptycene, which consist of triptycene molecules and phenyls, exotic electronic structures such as Dirac cones and flat bands arise from the kagome-type network. In this paper, we theoretically investigate the tight-binding models for polymerized triptycene, focusing on the origin of flat bands and the topological properties. The mechanism of the existence of the flat bands is elucidated by using the "molecular-orbital" representation, which we have developed in the prior works. Further, we propose that the present material is a promising candidate to realize the two-dimensional second-order topological insulator, which is characterized by the boundary states localized at the corners of the sample. To be concrete, we propose two methods to realize the second-order topological insulator, and elucidate the topological properties of the corresponding models by calculating the corner states as well as the bulk topological invariant, namely the $\mathbb{Z}_3$ Berry phase.
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Submitted 25 November, 2019; v1 submitted 13 July, 2019;
originally announced July 2019.
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One-dimensional van der Waals heterostructures
Authors:
Rong Xiang,
Taiki Inoue,
Yongjia Zheng,
Akihito Kumamoto,
Yang Qian,
Yuta Sato,
Ming Liu,
Devashish Gokhale,
Jia Guo,
Kaoru Hisama,
Satoshi Yotsumoto,
Tatsuro Ogamoto,
Hayato Arai,
Yu Kobayashi,
Hao Zhang,
Bo Hou,
Anton Anisimov,
Yasumitsu Miyata,
Susumu Okada,
Shohei Chiashi,
Yan Li,
**g Kong,
Esko I. Kauppinen,
Yuichi Ikuhara,
Kazu Suenaga
, et al. (1 additional authors not shown)
Abstract:
Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophis…
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Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophisticated structures layer by layer. However, this concept has been so far limited in two dimensional (2D) materials. Here we show a class of new material where different layers are coaxially (instead of planarly) stacked. As the structure is in one dimensional (1D) form, we name it "1D vdW heterostructures". We demonstrate a 5 nm diameter nanotube consisting of three different materials: an inner conductive carbon nanotube (CNT), a middle insulating hexagonal boron nitride nanotube (BNNT) and an outside semiconducting MoS2 nanotube. As the technique is highly applicable to other materials in the current 2D libraries,4-6 we anticipate our strategy to be a starting point for discovering a class of new semiconducting nanotube materials. A plethora of function-designable 1D heterostructures will appear after the combination of CNTs, BNNTs and semiconducting nanotubes.
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Submitted 30 October, 2018; v1 submitted 16 July, 2018;
originally announced July 2018.
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Optimization of neural networks via finite-value quantum fluctuations
Authors:
Masayuki Ohzeki,
Shuntaro Okada,
Masayoshi Terabe,
Shinichiro Taguchi
Abstract:
We numerically test an optimization method for deep neural networks (DNNs) using quantum fluctuations inspired by quantum annealing. For efficient optimization, our method utilizes the quantum tunneling effect beyond the potential barriers. The path integral formulation of the DNN optimization generates an attracting force to simulate the quantum tunneling effect. In the standard quantum annealing…
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We numerically test an optimization method for deep neural networks (DNNs) using quantum fluctuations inspired by quantum annealing. For efficient optimization, our method utilizes the quantum tunneling effect beyond the potential barriers. The path integral formulation of the DNN optimization generates an attracting force to simulate the quantum tunneling effect. In the standard quantum annealing method, the quantum fluctuations will vanish at the last stage of optimization. In this study, we propose a learning protocol that utilizes a finite value for quantum fluctuations strength to obtain higher generalization performance, which is a type of robustness. We demonstrate the performance of our method using two well-known open datasets: the MNIST dataset and the Olivetti face dataset. Although computational costs prevent us from testing our method on large datasets with high-dimensional data, results show that our method can enhance generalization performance by induction of the finite value for quantum fluctuations.
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Submitted 1 July, 2018;
originally announced July 2018.
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Statistical-mechanical analysis of compressed sensing for Hamiltonian estimation of Ising spin glass
Authors:
Chako Takahashi,
Masayuki Ohzeki,
Shuntaro Okada,
Masayoshi Terabe,
Shinichiro Taguchi,
Kazuyuki Tanaka
Abstract:
Several powerful machines, such as the D-Wave 2000Q, dedicated to solving combinatorial optimization problems through the Ising-model formulation have been developed. To input problems into the machines, the unknown parameters on the Ising model must be determined, and this is necessarily a nontrivial task. It could be beneficial to construct a method to estimate the parameters of the Ising model…
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Several powerful machines, such as the D-Wave 2000Q, dedicated to solving combinatorial optimization problems through the Ising-model formulation have been developed. To input problems into the machines, the unknown parameters on the Ising model must be determined, and this is necessarily a nontrivial task. It could be beneficial to construct a method to estimate the parameters of the Ising model from several pairs of values of the energy and spin configurations. In the present paper, we propose a simple method employing the $L_1$-norm minimization, which is based on the concept of the compressed sensing. Moreover, we analyze the typical performance of our proposed method of the Hamiltonian estimation by using the replica method. We also compare our analytical results through several numerical experiments using the alternating direction method of multipliers.
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Submitted 6 March, 2018;
originally announced March 2018.
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Influence of disorder on conductance in bilayer graphene under perpendicular electric field
Authors:
Hisao Miyazaki,
Kazuhito Tsukagoshi,
Akinobu Kanda,
Minoru Otani,
Susumu Okada
Abstract:
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range h…
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Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable range hop** (VRH) conduction. We find that for the measured electric field range (0 - 1.3 V/nm) the mobility gap extracted from the TA behavior agrees well with the theoretical prediction for the band gap opening in bilayer graphene, although the VRH conduction deteriorates the insulating state more seriously in bilayer graphene with smaller mobility. These results show that the improvement of the mobility is crucial for the successful operation of the bilayer graphene field effect transistor.
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Submitted 28 September, 2010;
originally announced September 2010.
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Dielectric responses of the layered cobalt oxysulfide Sr_2Cu_2CoO_2S_2 with CoO_2 square-planes
Authors:
S. Okada,
I. Terasaki,
H. Ooyama,
M. Matoba
Abstract:
We have studied the dielectric responses of the layered cobalt oxysulfide Sr$_2$Cu$_2$CoO$_2$S$_2$ with the CoO$_2$ square-planes. With decreasing temperature below the Néel temperature, the resistivity increases like a semiconductor, and the thermopower decreases like a metal. The dielectric constant is highly dependent on temperature, and the dielectric relaxation is systematically changed wit…
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We have studied the dielectric responses of the layered cobalt oxysulfide Sr$_2$Cu$_2$CoO$_2$S$_2$ with the CoO$_2$ square-planes. With decreasing temperature below the Néel temperature, the resistivity increases like a semiconductor, and the thermopower decreases like a metal. The dielectric constant is highly dependent on temperature, and the dielectric relaxation is systematically changed with temperature, which is strongly correlated to the magnetic states. These behaviors suggest that carriers distributed homogeneously in the paramagnetic state at high temperatures are expelled from the antiferromagnetically ordered spin domain below the Néel temperature.
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Submitted 2 February, 2004;
originally announced February 2004.
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The Hypergraphite: A possible extension of graphitic network
Authors:
Y. Takagi,
M. Fujita,
K. Wakabayashi,
M. Igami,
S. Okada,
K. Nakada,
K. Kusakabe
Abstract:
We propose a class of networks which can be regarded as an extension of the graphitic network. These networks are constructed so that surface states with non-bonding character (edge states) are formed in a tight-binding model with one orbital for each atomic site. Besides, for several networks, the tight-binding electronic structures become a zero-gap semiconductor. These properties have been fo…
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We propose a class of networks which can be regarded as an extension of the graphitic network. These networks are constructed so that surface states with non-bonding character (edge states) are formed in a tight-binding model with one orbital for each atomic site. Besides, for several networks, the tight-binding electronic structures become a zero-gap semiconductor. These properties have been found in the $π$-electron system of the graphene. Thus, we call these networks hypergraphite.
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Submitted 4 January, 2000;
originally announced January 2000.
