Showing 1–1 of 1 results for author: Ojha, P K

All solution grown epitaxial magnonic crystal of thulium iron garnet thin film

Authors: Rajnandini Sharma, Pawan Kumar Ojha, Simran Sahoo, Rijul Roychowdhury, Shrawan Kumar Mishra

Abstract: Magnonics has shown the immense potential of compatibility with CMOS devices and the ability to be utilized in futuristic quantum computing. Therefore, the magnonic crystals, both metallic and insulating, are under extensive exploration. The presence of high spin-orbit interaction induced by the presence of rare-earth elements in thulium iron garnet (TmIG) increases its potential in magnonic appli… ▽ More Magnonics has shown the immense potential of compatibility with CMOS devices and the ability to be utilized in futuristic quantum computing. Therefore, the magnonic crystals, both metallic and insulating, are under extensive exploration. The presence of high spin-orbit interaction induced by the presence of rare-earth elements in thulium iron garnet (TmIG) increases its potential in magnonic applications. Previously, TmIG thin films were grown using ultra-high vacuum-based techniques. Here, we present a cost-effective solution-based approach that enables the excellent quality interface and surface roughness of the epitaxial TmIG/GGG. The deposited TmIG (12.2 nm) thin film's physical and spin dynamic properties are investigated in detail. The confirmation of the epitaxy using X-ray diffraction in $φ$-scan geometry along with the X-ray reflectivity and atomic force for the thickness and roughness analysis and topography, respectively. The epitaxial TmIG/GGG have confirmed the perpendicular magnetic anisotropy utilizing the polar-magneto-optic Kerr effect. Analyzing the ferromagnetic resonance study of TmIG/GGG thin films provides the anisotropy constant K$_U$ = 20.6$\times$10$^3$ $\pm$ 0.2$\times$10$^3$ N/m$^2$ and the Gilbert dam** parameter $α$ = 0.0216 $\pm$ 0.0028. The experimental findings suggest that the solution-processed TmIG/GGG thin films have the potential to be utilized in device applications. △ Less

Submitted 26 December, 2023; originally announced December 2023.