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Rapid and Robust construction of an ML-ready peak feature table from X-ray diffraction data using Bayesian peak-top fitting
Authors:
Ryo Murakami,
Taisuke T. Sasaki,
Hideki Yoshikawa,
Yoshitaka Matsushita,
Keitaro Sodeyama,
Tadakatsu Ohkubo,
Hiroshi Shinotsuka,
Kenji Nagata
Abstract:
To advance the development of materials through data-driven scientific methods, appropriate methods for building machine learning (ML)-ready feature tables from measured and computed data must be established. In materials development, X-ray diffraction (XRD) is an effective technique for analysing crystal structures and other microstructural features that have information that can explain material…
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To advance the development of materials through data-driven scientific methods, appropriate methods for building machine learning (ML)-ready feature tables from measured and computed data must be established. In materials development, X-ray diffraction (XRD) is an effective technique for analysing crystal structures and other microstructural features that have information that can explain material properties. Therefore, the fully automated extraction of peak features from XRD data without the bias of an analyst is a significant challenge. This study aimed to establish an efficient and robust approach for constructing peak feature tables that follow ML standards (ML-ready) from XRD data. We challenge peak feature extraction in the situation where only the peak function profile is known a priori, without knowledge of the measurement material or crystal structure factor. We utilized Bayesian estimation to extract peak features from XRD data and subsequently performed Bayesian regression analysis with feature selection to predict the material property. The proposed method focused only on the tops of peaks within localized regions of interest (ROIs) and extracted peak features quickly and accurately. This process facilitated the rapid extracting of major peak features from the XRD data and the construction of an ML-ready feature table. We then applied Bayesian linear regression to the maximum energy product $(BH)_{max}$, using the extracted peak features as the explanatory variable. The outcomes yielded reasonable and robust regression results. Thus, the findings of this study indicated that \textit{004} peak height and area were important features for predicting $(BH)_{max}$.
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Submitted 6 February, 2024;
originally announced March 2024.
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Nonequilibrium magnonic thermal transport engineering
Authors:
Takamasa Hirai,
Toshiaki Morita,
Subrata Biswas,
Jun Uzuhashi,
Takashi Yagi,
Yuichiro Yamashita,
Varun Kushwaha Kumar,
Fuya Makino,
Rajkumar Modak,
Yuya Sakuraba,
Tadakatsu Ohkubo,
Rulei Guo,
Bin Xu,
Junichiro Shiomi,
Daichi Chiba,
Ken-ichi Uchida
Abstract:
Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here,…
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Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport properties including electrical conductivity and thermoelectric conversion coefficients have material-specific values, it is known that thermal conductivity can be modulated artificially via phonon engineering techniques. Here, we demonstrate another way of artificially modulating the heat conduction in solids: magnonic thermal transport engineering. The time-domain thermoreflectance measurements using ferromagnetic metal/insulator junction systems reveal that the thermal conductivity of the ferromagnetic metals and interfacial thermal conductance vary significantly depending on the spatial distribution of nonequilibrium spin currents. Systematic measurements of the thermal transport properties with changing the boundary conditions for spin currents show that the observed thermal transport modulation stems from magnon origin. This observation unveils that magnons significantly contribute to the heat conduction even in ferromagnetic metals at room temperature, upsetting the conventional wisdom that the thermal conductivity mediated by magnons is very small in metals except at low temperatures. The magnonic thermal transport engineering offers a new principle and method for active thermal management.
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Submitted 6 March, 2024;
originally announced March 2024.
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Creation of flexible spin-caloritronic material with giant transverse thermoelectric conversion by nanostructure engineering
Authors:
Ravi Gautam,
Takamasa Hirai,
Abdulkareem Alasli,
Hosei Nagano,
Tadakatsu Ohkubo,
Ken-ichi Uchida,
Hossein Sepehri-Amin
Abstract:
Functional materials such as magnetic, thermoelectric, and battery materials have been revolutionized through nanostructure engineering. However, spin caloritronics, an advancing field based on spintronics and thermoelectrics with fundamental physics studies, has focused only on uniform materials without complex microstructures. Here, we show how nanostructure engineering enables transforming simp…
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Functional materials such as magnetic, thermoelectric, and battery materials have been revolutionized through nanostructure engineering. However, spin caloritronics, an advancing field based on spintronics and thermoelectrics with fundamental physics studies, has focused only on uniform materials without complex microstructures. Here, we show how nanostructure engineering enables transforming simple magnetic alloys into spin-caloritronic materials displaying significantly large transverse thermoelectric conversion properties. The anomalous Nernst effect (ANE), a promising transverse thermoelectric phenomenon for energy harvesting and heat sensing, has been challenging to utilize due to the scarcity of materials with large anomalous Nernst coefficients. We demonstrate a remarkable improvement in the anomalous Nernst coefficients in flexible Fe-based amorphous materials through nanostructural engineering, without altering their composition. This surpasses all reported amorphous alloys and is comparable to single crystals showing large ANE. The enhancement is attributed to Cu nano-clustering, facilitating efficient transverse thermoelectric conversion. This discovery advances the materials science of spin caloritronics, opening new avenues for designing high-performance transverse thermoelectric devices for practical applications.
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Submitted 16 October, 2023;
originally announced October 2023.
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Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure
Authors:
Jieyuan Song,
Thomas Scheike,
Cong He,
Zhenchao Wen,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Hiroaki Sukegawa,
Seiji Mitani
Abstract:
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxi…
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Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxial CoFe/rock-salt MgAlO (MAO)/CoFe is explored to introduce close-packed lattice systems into MTJs. Using an atomically flat Ru(0001) epitaxial buffer layer, fcc(111) epitaxial growth of the CoFe/MAO/CoFe trilayer is achieved. Sharp CoFe(111)/MAO(111) interfaces are confirmed due to the introduction of periodic dislocations by forming a 5:6 in-plane lattice matching structure. The fabricated (111) MTJ exhibits a tunnel magnetoresistance ratio of 37% at room temperature (47% at 10 K). Symmetric differential conductance curves with respect to bias polarity are observed, indicating the achievement of nearly identical upper and lower MAO interface qualities. Despite the charge-uncompensated (111) orientation for a rock-salt-like MAO barrier, the achievement of flat, stable, and spin-polarized barrier interfaces opens a promising avenue for expanding the design of MTJ structures.
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Submitted 8 August, 2023;
originally announced August 2023.
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Oxide layer dependent orbital torque efficiency in ferromagnet/Cu/Oxide heterostructures
Authors:
Junyeon Kim,
Jun Uzuhashi,
Masafumi Horio,
Tomoaki Senoo,
Dongwook Go,
Daegeun Jo,
Toshihide Sumi,
Tetsuya Wada,
Iwao Matsuda,
Tadakatsu Ohkubo,
Seiji Mitani,
Hyun-Woo Lee,
YoshiChika Otani
Abstract:
The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to identify the underlying physics that determines the efficiency of orbital torque (OT). In this study, we systematically investigate the variation of OT governed by orbital Rashba-Edelstein effect at the Cu/Oxide interfa…
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The utilization of orbital transport provides a versatile and efficient spin manipulation mechanism. As interest in orbital-mediated spin manipulation grows, we face a new issue to identify the underlying physics that determines the efficiency of orbital torque (OT). In this study, we systematically investigate the variation of OT governed by orbital Rashba-Edelstein effect at the Cu/Oxide interface, as we change the Oxide material. We find that OT varies by a factor of ~2, depending on the Oxide. Our results suggest that the active electronic interatomic interaction (hop**) between Cu and oxygen atom is critical in determining OT. This also gives us an idea of what type of material factors is critical in forming a chiral orbital Rashba texture at the Cu/Oxide interface.
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Submitted 19 July, 2023;
originally announced July 2023.
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Sm-Co-based amorphous alloy films for zero-field operation of transverse thermoelectric generation
Authors:
Rajkumar Modak,
Yuya Sakuraba,
Takamasa Hirai,
Takashi Yagi,
Hossein Sepehri-Amin,
Weinan Zhou,
Hiroto Masuda,
Takeshi Seki,
Koki Takanashi,
Tadakatsu Ohkubo,
Ken-ichi Uchida
Abstract:
Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric p…
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Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric performance of Sm-Co-based alloy films. The high-throughput material investigation revealed the best Sm-Co-based alloys with the large anomalous Nernst effect (ANE) as well as the anomalous Ettingshausen effect (AEE). In addition to ANE/AEE, we discovered unique and superior material properties in these alloys: the amorphous structure, low thermal conductivity, and large in-plane coercivity and remanent magnetization. These properties make it advantageous over conventional materials to realize heat flux sensing applications based on ANE, as our Sm-Co-based films can generate thermoelectric output without an external magnetic field. Importantly, the amorphous nature enables the fabrication of these films on various substrates including flexible sheets, making the large-scale and low-cost manufacturing easier. Our demonstration will provide a pathway to develop flexible transverse thermoelectric devices for smart thermal management.
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Submitted 18 November, 2022; v1 submitted 21 March, 2022;
originally announced March 2022.
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Observation of Nonlinear Spin-Charge Conversion in the Thin Film of Nominally Centrosymmetric Dirac Semimetal SrIrO3 at Room Temperature
Authors:
Y. Kozuka,
S. Isogami,
K. Masuda,
Y. Miura,
Saikat Das,
J. Fujioka,
T. Ohkubo,
S. Kasai
Abstract:
Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch wavefunction in the linear-response regime. Beyond the linear regime, nonlinear spin-charge conversion in the higher-order electric field terms has recently been demons…
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Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch wavefunction in the linear-response regime. Beyond the linear regime, nonlinear spin-charge conversion in the higher-order electric field terms has recently been demonstrated in noncentrosymmetric materials with nontrivial spin texture in the momentum space. Here we report the observation of the nonlinear charge-spin conversion in a nominally centrosymmetric oxide material, SrIrO3, by breaking inversion symmetry at the interface. A large second-order magnetoelectric coefficient is observed at room temperature because of the antisymmetric spin-orbit interaction at the interface of Dirac semimetallic bands, which is subject to the symmetry constraint of the substrates. Our study suggests that nonlinear spin-charge conversion can be induced in many materials with strong spin-orbit interaction at the interface by breaking the local inversion symmetry to give rise to spin splitting in otherwise spin degenerate systems.
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Submitted 7 May, 2021;
originally announced May 2021.
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Deterministic influence of substrate-induced oxygen vacancy diffusion on $Bi_{2}WO_{6}$ thin film growth
Authors:
Saikat Das,
Tadakatsu Ohkubo,
Shinya Kasai,
Yusuke Kozuka
Abstract:
In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen vacancies from the substrate overpowers the growth temperature and oxygen partial pressure to deterministically influence the phase stability of $Bi_{2}WO_{6}$…
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In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen vacancies from the substrate overpowers the growth temperature and oxygen partial pressure to deterministically influence the phase stability of $Bi_{2}WO_{6}$ thin film grown by the pulsed laser deposition technique. We show that when grown on an oxygen-deficient $SrTiO_{3}$ substrate, the $Bi_{2}WO_{6}$ film exhibits a mixture of (001) and (100)/(010)-oriented domains alongside (001)-oriented impurity $WO_{3}$ phases. The (100)/(010)-oriented $Bi_{2}WO_{6}$ phases form a self-organized 3D nanopillar-structure, yielding a very rough film surface morphology. Oxygen annealing of the substrate or using a few monolayer-thick $SrRuO_{3}$ as the blocking layer for oxygen vacancy diffusion enables growing high-quality single-crystalline $Bi_{2}WO_{6}$ (001) thin film exhibiting an atomically smooth film surface with step-terrace structure. We propose that the large oxide-ion conductivity of $Bi_{2}WO_{6}$ facilitates diffusion of oxygen vacancies from the substrate during the film growth, accelerating the evaporation of volatile Bismuth (Bi), which hinders the epitaxial growth. Our work provides a general guideline for high-quality thin film growth of Aurivillius compounds and other oxide-ion conductors containing volatile elements.
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Submitted 26 January, 2021;
originally announced January 2021.
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Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
Authors:
Thomas Scheike,
Qingyi Xiang,
Zhenchao Wen,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Seiji Mitani
Abstract:
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a funct…
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Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.
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Submitted 17 November, 2020;
originally announced November 2020.
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Transient response of spin Peltier effect revealed by lock-in thermoreflectance measurement
Authors:
Takumi Yamazaki,
Ryo Iguchi,
Tadakatsu Ohkubo,
Hosei Nagano,
Ken-ichi Uchida
Abstract:
Transient response of the spin Peltier effect (SPE) in a Pt/yttrium iron garnet junction system has been investigated by means of a lock-in thermoreflectance method. We applied an alternating charge current to the Pt layer to drive SPE through the spin Hall effect, and measured the AC response of the resultant SPE-induced temperature modulation at frequencies ranging from 10 Hz to 1 MHz. We found…
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Transient response of the spin Peltier effect (SPE) in a Pt/yttrium iron garnet junction system has been investigated by means of a lock-in thermoreflectance method. We applied an alternating charge current to the Pt layer to drive SPE through the spin Hall effect, and measured the AC response of the resultant SPE-induced temperature modulation at frequencies ranging from 10 Hz to 1 MHz. We found that the SPE-induced temperature modulation decreases with increasing the frequency when the frequency is >1 kHz. This is a characteristic feature of SPE revealed by the high frequency measurements based on the lock-in thermoreflectance, while previous low frequency measurements showed that the SPE signal is independent of the frequency. We attribute the decrease of the temperature modulation to the length scale of the SPE-induced heat current; by comparing the experimental results with one-dimensional heat conduction calculations, the length scale of SPE is estimated to be 0.94 μm.
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Submitted 8 January, 2020; v1 submitted 29 October, 2019;
originally announced October 2019.
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The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons
Authors:
Zhendong Chi,
Yong-Chang Lau,
Xiandong Xu,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Masamitsu Hayashi
Abstract:
We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ allo…
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We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ alloy. The SHC increases with increasing thickness of the Bi$_{1-x}$Sb$_x$ alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the $L$ valley of the narrow gap Bi$_{1-x}$Sb$_x$ alloy.
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Submitted 28 October, 2019;
originally announced October 2019.
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Searching the weakest link: Demagnetizing fields and magnetization reversal in permanent magnets
Authors:
J. Fischbacher,
A. Kovacs,
L. Exl J. Kühnel,
E. Mehofer,
H. Sepehri-Amin,
T. Ohkubo,
K. Hono,
T. Schrefl
Abstract:
Magnetization reversal in permanent magnets occurs by the nucleation and expansion of reversed domains. Micromagnetic theory offers the possibility to localize the spots within the complex structure of the magnet where magnetization reversal starts. We compute maps of the local nucleation field in a Nd2Fe14B permanent magnet using a model order reduction approach. Considering thermal fluctuations…
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Magnetization reversal in permanent magnets occurs by the nucleation and expansion of reversed domains. Micromagnetic theory offers the possibility to localize the spots within the complex structure of the magnet where magnetization reversal starts. We compute maps of the local nucleation field in a Nd2Fe14B permanent magnet using a model order reduction approach. Considering thermal fluctuations in numerical micromagnetics we can also quantify the reduction of the coercive field due to thermal activation. However, the major reduction of the coercive field is caused by the soft magnetic grain boundary phases and misorientation if there is no surface damage.
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Submitted 24 May, 2018;
originally announced May 2018.
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MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Authors:
Hiroaki Sukegawa,
Yushi Kato,
Mohamed Belmoubarik,
P. -H. Cheng,
Tadaomi Daibou,
Naoharu Shimomura,
Yuuzo Kamiguchi,
Junichi Ito,
Hiroaki Yoda,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with…
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Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the barrier height of the MgGa2O4 barrier is much lower than that in an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.
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Submitted 11 November, 2016;
originally announced November 2016.
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Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions
Authors:
Mohamed Belmoubarik,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono
Abstract:
We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion…
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We investigated the effect of a Mg-Al layer insertion at the bottom interface of epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) on their spin-dependent transport properties. The tunnel magnetoresistance (TMR) ratio and differential conductance spectra for the parallel magnetic configuration exhibited clear dependence on the inserted Mg-Al thickness. A slight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a large TMR ratio above 200% at room temperature and observing a distinct local minimum structure in conductance spectra. In contrast, thicker Mg-Al (> 0.2 nm) induced a reduction of TMR ratios and featureless conductance spectra, indicating a degradation of the bottom-Fe/$MgAl_{2}O_{4}$ interface. Therefore, a minimal Mg-Al insertion was found to be effective to maximize the TMR ratio for a sputtered $MgAl_{2}O_{4}$-based MTJ.
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Submitted 8 November, 2016;
originally announced November 2016.
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Interdiffusion in epitaxial ultrathin Co2FeAl/MgO heterostructures with interface-induced perpendicular magnetic anisotropy
Authors:
Zhenchao Wen,
Jason Paul Hadorn,
Jun Okabayashi,
Hiroaki Sukegawa,
Tadakatsu Ohkubo,
Koichiro Inomata,
Seiji Mitani,
Kazuhiro Hono
Abstract:
The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-…
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The structures of epitaxial ultrathin Co2FeAl/MgO(001) heterostructures relating to the interface-induced perpendicular magnetic anisotropy (PMA) were investigated using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and x-ray magnetic circular dichroism. We found that Al atoms from the Co2FeAl layer significantly interdiffuse into MgO, forming an Al-deficient Co-Fe-Al/Mg-Al-O structure near the Co2FeAl/MgO interface. This atomic replacement may play an additional role for enhancing PMA, which is consistent with the observed large perpendicular orbital magnetic moments of Fe atoms at the interface. This work suggests that control of interdiffusion at ferromanget/barrier interfaces is critical for designing an interface-induced PMA system.
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Submitted 10 October, 2016;
originally announced October 2016.
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Correlation between the spin Hall angle and the structural phases of early 5d transition metals
Authors:
Jun Liu,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono,
Masamitsu Hayashi
Abstract:
We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalli…
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We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall angle of the heavy metals. Transmission electron microscopy images show that all underlayers are amorphous-like when their thicknesses are small, however, crystalline phases emerge as the thickness is increased for certain elements. We find that the heavy metal layer thickness dependence of the SMR reflects these changes in structure. The spin Hall angle largest |θ$_{SH}$| of Hf, Ta, W and Re (~0.11, 0.10, 0.23 and 0.07, respectively) is found when the dominant phase is amorphous-like. We find that the amorphous-like phase not only possesses large resistivity but also exhibits sizeable spin Hall conductivity, which both contribute to the emergence of the large spin Hall angle.
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Submitted 11 December, 2015;
originally announced December 2015.
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A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance
Authors:
Zhenchao Wen,
Hiroaki Sukegawa,
Takao Furubayashi,
Jungwoo Koo,
Koichiro Inomata,
Seiji Mitani,
Jason Paul Hadorn,
Tadakatsu Ohkubo,
Kazuhiro Hono
Abstract:
An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs i…
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An unusual crystallographic orientation of hexagonal Ru with a 4-fold symmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported, in which an approximately Ru(02-23) growth attributes to the lattice matching among MgO, Ru, and Co2FeAl. Perpendicular magnetic anisotropy of the Co2FeAl/MgO interface is substantially enhanced as compared with those with a Cr(001) layer. The MTJs incorporating this structure gave rise to the largest tunnel magnetoresistance for perpendicular MTJs using low dam** Heusler alloys. The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth with an unprecedentedly high crystal index, opening a unique pathway for the development of perpendicular anisotropy films of cubic and tetragonal ferromagnetic alloys.
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Submitted 16 August, 2014; v1 submitted 11 July, 2014;
originally announced July 2014.
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Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As
Authors:
Pham Nam Hai,
Le Duc Anh,
Shyam Mohan,
Tsuyoshi Tamegai,
Masaya Kodzuka,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Masaaki Tanaka
Abstract:
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier do** by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-indu…
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We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier do** by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
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Submitted 3 September, 2012;
originally announced September 2012.
