Showing 1–20 of 20 results for author: Ogletree, D F

A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Authors: John C. Thomas, Wei Chen, Yihuang Xiong, Bradford A. Barker, Junze Zhou, Weiru Chen, Antonio Rossi, Nolan Kelly, Zhuohang Yu, Da Zhou, Shalini Kumari, Edward S. Barnard, Joshua A. Robinson, Mauricio Terrones, Adam Schwartzberg, D. Frank Ogletree, Eli Rotenberg, Marcus M. Noack, Sinéad Griffin, Archana Raja, David A. Strubbe, Gian-Marco Rignanese, Alexander Weber-Bargioni, Geoffroy Hautier

Abstract: Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in… ▽ More Point defects in two-dimensional materials are of key interest for quantum information science. However, the space of possible defects is immense, making the identification of high-performance quantum defects extremely challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS$_2$, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (Co$_{\rm S}^{0}$) as very promising and fabricate it with scanning tunneling microscopy (STM). The Co$_{\rm S}^{0}$ electronic structure measured by STM agrees with first principles and showcases an attractive new quantum defect. Our work shows how HT computational screening and novel defect synthesis routes can be combined to design new quantum defects. △ Less

Submitted 14 September, 2023; originally announced September 2023.

Comments: 38 pages, 19 figures

WS$_2$ Band Gap Renormalization Induced by Tomonaga Luttinger Liquid Formation in Mirror Twin Boundaries

Authors: Antonio Rossi, John C. Thomas, Johannes T. Küchle, Elyse Barré, Zhuohang Yu, Da Zhou, Shalini Kumari, Hsin-Zon Tsai, Ed Wong, Chris Jozwiak, Aaron Bostwick, Joshua A. Robinson, Mauricio Terrones, Archana Raja, Adam Schwartzberg, D. Frank Ogletree, Jeffrey B. Neaton, Michael F. Crommie, Francesco Allegretti, Willi Auwärter, Eli Rotenberg, Alexander Weber-Bargioni

Abstract: Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of mirror twin boundaries (MTBs) hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate requi… ▽ More Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Reports of mirror twin boundaries (MTBs) hosting a Fermi liquid or a TLL have suggested a dependence on the underlying substrate, however, unveiling the physical details of electronic contributions from the substrate require cross-correlative investigation. Here, we study TLL formation in MTBs within defectively engineered WS$_2$ atop graphene, where band structure and the atomic environment is visualized with nano angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy, and non-contact atomic force microscopy. Correlations between the local density of states and electronic band dispersion elucidated the electron transfer from graphene into a TLL hosted by MTB defects. We find that MTB defects can be substantially charged at a local level, which drives a band gap shift by $\sim$0.5 eV. △ Less

Submitted 18 January, 2023; v1 submitted 6 January, 2023; originally announced January 2023.

Comments: Main text is 13 pages, 4 figures; Supplementary text is 14 pages, 11 figures

Effects of Laser-Annealing on Fixed-Frequency Superconducting Qubits

Authors: Hyunseong Kim, Christian Jünger, Alexis Morvan, Edward S. Barnard, William P. Livingston, M. Virginia P. Altoé, Yosep Kim, Chengyu Song, Larry Chen, John Mark Kreikebaum, D. Frank Ogletree, David I. Santiago, Irfan Siddiqi

Abstract: As superconducting quantum processors increase in complexity, techniques to overcome constraints on frequency crowding are needed. The recently developed method of laser-annealing provides an effective post-fabrication method to adjust the frequency of superconducting qubits. Here, we present an automated laser-annealing apparatus based on conventional microscopy components and demonstrate preserv… ▽ More As superconducting quantum processors increase in complexity, techniques to overcome constraints on frequency crowding are needed. The recently developed method of laser-annealing provides an effective post-fabrication method to adjust the frequency of superconducting qubits. Here, we present an automated laser-annealing apparatus based on conventional microscopy components and demonstrate preservation of highly coherent transmons. In one case, we observe a two-fold increase in coherence after laser-annealing and perform noise spectroscopy on this qubit to investigate the change in defect features, in particular two-level system defects. Finally, we present a local heating model as well as demonstrate aging stability for laser-annealing on the wafer scale. Our work constitutes an important first step towards both understanding the underlying physical mechanism and scaling up laser-annealing of superconducting qubits. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Fabrication of Nanostructured GaAs/AlGaAs Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

Authors: F. Riminucci, V. Ardizzone, L. Francaviglia, M. Lorenzon, C. Stavrakas, S. Dhuey, A. Schwartzberg, S. Zanotti, D. Gerace, K. Baldwin, L. N. Pfeiffer, G. Gigli, D. F. Ogletree, A. Weber-Bargioni, S. Cabrini, D. Sanvitto

Abstract: Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it diffi… ▽ More Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in GaAs/AlGaAs waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls. △ Less

Submitted 11 May, 2022; originally announced May 2022.

Microscopic Theory of Magnetic Disorder-Induced Decoherence in Superconducting Nb Films

Authors: Evan Sheridan, Thomas F. Harrelson, Eric Sivonxay, Kristin A. Persson, M. Virginia P. Altoé, Irfan Siddiqi, D. Frank Ogletree, David I. Santiago, Sinéad M. Griffin

Abstract: The performance of superconducting qubits is orders of magnitude below what is expected from theoretical estimates based on the loss tangents of the constituent bulk materials. This has been attributed to the presence of uncontrolled surface oxides formed during fabrication which can introduce defects and impurities that create decoherence channels. Here, we develop an ab initio Shiba theory to in… ▽ More The performance of superconducting qubits is orders of magnitude below what is expected from theoretical estimates based on the loss tangents of the constituent bulk materials. This has been attributed to the presence of uncontrolled surface oxides formed during fabrication which can introduce defects and impurities that create decoherence channels. Here, we develop an ab initio Shiba theory to investigate the microscopic origin of magnetic-induced decoherence in niobium thin film superconductors and the formation of native oxides. Our ab initio calculations encompass the roles of structural disorder, stoichiometry, and strain on the formation of decoherence-inducing local spin moments. With parameters derived from these first-principles calculations we develop an effective quasi-classical model of magnetic-induced losses in the superconductor. We identify d-channel losses (associated with oxygen vacancies) as especially parasitic, resulting in a residual zero temperature surface impedance. This work provides a route to connecting atomic scale properties of superconducting materials and macroscopic decoherence channels affecting quantum systems. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: 10 pages plus supplemental materials

Elucidating the local atomic and electronic structure of amorphous oxidized superconducting niobium films

Authors: Thomas F. Harrelson, Evan Sheridan, Ellis Kennedy, John Vinson, Alpha T. N'Diaye, M. Virginia P. Altoé, Adam Schwartzberg, Irfan Siddiqi, D. Frank Ogletree, Mary C. Scott, Sinéad M. Griffin

Abstract: Qubits made from superconducting materials are a mature platform for quantum information science application such as quantum computing. However, materials-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate materials… ▽ More Qubits made from superconducting materials are a mature platform for quantum information science application such as quantum computing. However, materials-based losses are now a limiting factor in reaching the coherence times needed for applications. In particular, knowledge of the atomistic structure and properties of the circuit materials is needed to identify, understand, and mitigate materials-based decoherence channels. In this work we characterize the atomic structure of the native oxide film formed on Nb resonators by comparing fluctuation electron microscopy experiments to density functional theory calculations, finding that an amorphous layer consistent with an Nb$_2$O$_5$ stoichiometry. Comparing X-ray absorption measurements at the Oxygen K edge with first-principles calculations, we find evidence of d-type magnetic impurities in our sample, known to cause impedance in proximal superconductors. This work identifies the structural and chemical composition of the oxide layer grown on Nb superconductors, and shows that soft X-ray absorption can fingerprint magnetic impurities in these superconducting systems. △ Less

Submitted 22 November, 2021; originally announced November 2021.

Comments: 7 pages, 4 figures. The following article has been submitted to Applied Physics Letters

Autonomous Investigations over WS$_2$ and Au{111} with Scanning Probe Microscopy

Authors: John C. Thomas, Antonio Rossi, Darian Smalley, Luca Francaviglia, Zhuohang Yu, Tianyi Zhang, Shalini Kumari, Joshua A. Robinson, Mauricio Terrones, Masahiro Ishigami, Eli Rotenberg, Edward S. Barnard, Archana Raja, Ed Wong, D. Frank Ogletree, Marcus M. Noack, Alexander Weber-Bargioni

Abstract: Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) map** provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutio… ▽ More Individual atomic defects in 2D materials impact their macroscopic functionality. Correlating the interplay is challenging, however, intelligent hyperspectral scanning tunneling spectroscopy (STS) map** provides a feasible solution to this technically difficult and time consuming problem. Here, dense spectroscopic volume is collected autonomously via Gaussian process regression, where convolutional neural networks are used in tandem for spectral identification. Acquired data enable defect segmentation, and a workflow is provided for machine-driven decision making during experimentation with capability for user customization. We provide a means towards autonomous experimentation for the benefit of both enhanced reproducibility and user-accessibility. Hyperspectral investigations on WS$_2$ sulfur vacancy sites are explored, which is combined with local density of states confirmation on the Au{111} herringbone reconstruction. Chalcogen vacancies, pristine WS$_2$, Au face-centered cubic, and Au hexagonal close packed regions are examined and detected by machine learning methods to demonstrate the potential of artificial intelligence for hyperspectral STS map**. △ Less

Submitted 2 May, 2022; v1 submitted 7 October, 2021; originally announced October 2021.

Comments: Updates from final journal publication

Journal ref: NPJ Computational Materials, vol. 8, p. 99, May 2022

Localization and reduction of superconducting quantum coherent circuit losses

Authors: M. Virginia P. Altoé, Archan Banerjee, Cassidy Berk, Ahmed Hajr, Adam Schwartzberg, Chengyu Song, Mohammed Al Ghadeer, Shaul Aloni, Michael J. Elowson, John Mark Kreikebaum, Ed K. Wong, Sinead Griffin, Saleem Rao, Alexander Weber-Bargioni, Andrew M. Minor, David I. Santiago, Stefano Cabrini, Irfan Siddiqi, D. Frank Ogletree

Abstract: Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (T… ▽ More Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum regime, photons of $27 μ$eV at 6.5 GHz. Quantum coherence is fundamentally limited by materials defects, in particular atomic-scale parasitic two-level systems (TLS) in amorphous dielectrics at circuit interfaces.[1] The electric fields driving oscillating charges in quantum circuits resonantly couple to TLS, producing phase noise and dissipation. We use coplanar niobium-on-silicon superconducting resonators to probe decoherence in quantum circuits. By selectively modifying interface dielectrics, we show that most TLS losses come from the silicon surface oxide, and most non-TLS losses are distributed throughout the niobium surface oxide. Through post-fabrication interface modification we reduced TLS losses by 85% and non-TLS losses by 72%, obtaining record single-photon resonator quality factors above 5 million and approaching a regime where non-TLS losses are dominant. [1]Müller, C., Cole, J. H. & Lisenfeld, J. Towards understanding two-level-systems in amorphous solids: insights from quantum circuits. Rep. Prog. Phys. 82, 124501 (2019) △ Less

Submitted 14 December, 2020; originally announced December 2020.

Comments: 10 pages, 3 figures, supplemental information 10 pages, 11 figures

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Authors: Bruno Schuler, Jun-Ho Lee, Christoph Kastl, Katherine A. Cochrane, Christopher T. Chen, Sivan Refaely-Abramson, Shengjun Yuan, Edo van Veen, Rafael Roldán, Nicholas J. Borys, Roland J. Koch, Shaul Aloni, Adam M. Schwartzberg, D. Frank Ogletree, Jeffrey B. Neaton, Alexander Weber-Bargioni

Abstract: Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided in… ▽ More Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and do** of TMDs. △ Less

Submitted 15 May, 2020; originally announced May 2020.

Journal ref: ACS Nano 13, 10520 (2019)

Electrically driven photon emission from individual atomic defects in monolayer WS2

Authors: Bruno Schuler, Katherine A. Cochrane, Christoph Kastl, Ed Barnard, Ed Wong, Nicholas Borys, Adam M. Schwartzberg, D. Frank Ogletree, F. Javier García de Abajo, Alexander Weber-Bargioni

Abstract: Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstr… ▽ More Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quantum emitters that overcome current limitations of conventional bulk emitters, such as yielding a high single-photon generation rate and offering surface accessibility for excitation and photon extraction. Here we demonstrate electrically stimulated photon emission from individual point defects in a 2D material. Specifically, by bringing a metallic tip into close proximity to a discrete defect state in the band gap of WS2, we induce inelastic tip-to-defect electron tunneling with an excess of transition energy carried by the emitted photons. We gain atomic spatial control over the emission through the position of the tip, while the spectral characteristics are highly customizable by varying the applied tip-sample voltage. Atomically resolved emission maps of individual sulfur vacancies and chromium substituent defects are in excellent agreement with the electron density of their respective defect orbitals as imaged via conventional elastic scanning tunneling microscopy. Inelastic charge-carrier injection into localized defect states of 2D materials thus provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Journal ref: Science Advances 6 (38), eabb5988 (2020)

Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride

Authors: Brian Shevitski, S. Matt Gilbert, Christopher T. Chen, Christoph Kastl, Edward S. Barnard, Ed Wong, D. Frank Ogletree, Kenji Watanabe, Takashi Taniguchi, Alex Zettl, Shaul Aloni

Abstract: Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent… ▽ More Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a sharp emission line at 435 nm. The emitters are activated and deactivated by electron beam irradiation and have spectral and temporal characteristics consistent with atomic color centers weakly coupled to lattice vibrations. The emitters are conspicuously absent from commercially available h-BN and are only present in ultra-high-quality h-BN grown using a high-pressure, high-temperature Ba-B-N flux/solvent, suggesting that these emitters originate from impurities or related defects specific to this unique synthetic route. Our results imply that the light emission is activated and deactivated by electron beam manipulation of the charge state of an impurity-defect complex. △ Less

Submitted 5 September, 2019; v1 submitted 27 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 100, 155419 (2019)

Cathodoluminescence-based nanoscopic thermometry in a lanthanide-doped phosphor

Authors: Clarice D. Aiello, Andrea D. Pickel, Edward Barnard, Rebecca B. Wai, Christian Monachon, Edward Wong, Shaul Aloni, D. Frank Ogletree, Chris Dames, Naomi Ginsberg

Abstract: Crucial to analyze phenomena as varied as plasmonic hot spots and the spread of cancer in living tissue, nanoscale thermometry is challenging: probes are usually larger than the sample under study, and contact techniques may alter the sample temperature itself. Many photostable nanomaterials whose luminescence is temperature-dependent, such as lanthanide-doped phosphors, have been shown to be good… ▽ More Crucial to analyze phenomena as varied as plasmonic hot spots and the spread of cancer in living tissue, nanoscale thermometry is challenging: probes are usually larger than the sample under study, and contact techniques may alter the sample temperature itself. Many photostable nanomaterials whose luminescence is temperature-dependent, such as lanthanide-doped phosphors, have been shown to be good non-contact thermometric sensors when optically excited. Using such nanomaterials, in this work we accomplished the key milestone of enabling far-field thermometry with a spatial resolution that is not diffraction-limited at readout. We explore thermal effects on the cathodoluminescence of lanthanide-doped NaYF$_4$ nanoparticles. Whereas cathodoluminescence from such lanthanide-doped nanomaterials has been previously observed, here we use quantitative features of such emission for the first time towards an application beyond localization. We demonstrate a thermometry scheme that is based on cathodoluminescence lifetime changes as a function of temperature that achieves $\sim$ 30 mK sensitivity in sub-$μ$m nanoparticle patches. The scheme is robust against spurious effects related to electron beam radiation damage and optical alignment fluctuations. We foresee the potential of single nanoparticles, of sheets of nanoparticles, and also of thin films of lanthanide-doped NaYF$_4$ to yield temperature information via cathodoluminescence changes when in the vicinity of a sample of interest; the phosphor may even protect the sample from direct contact to damaging electron beam radiation. Cathodoluminescence-based thermometry is thus a valuable novel tool towards temperature monitoring at the nanoscale, with broad applications including heat dissipation in miniaturized electronics and biological diagnostics. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Comments: Main text: 30 pages + 4 figures; supplementary information: 22 pages + 8 figures

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory

Authors: Sara Barja, Sivan Refaely-Abramson, Bruno Schuler, Diana Y. Qiu, Artem Pulkin, Sebastian Wickenburg, Hye** Ryu, Miguel M. Ugeda, Christoph Kastl, Christopher Chen, Choongyu Hwang, Adam Schwartzberg, Shaul Aloni, Sung-Kwan Mo, D. Frank Ogletree, Michael F. Crommie, Oleg V. Yazyev, Steven G. Louie, Jeffrey B. Neaton, Alexander Weber-Bargioni

Abstract: Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scan… ▽ More Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in deep in-gap states (IGS). As a result, important features in the optical response of 2D-TMDs have typically been attributed to chalcogen vacancies, with indirect support from Transmission Electron Microscopy (TEM) and Scanning Tunneling Microscopy (STM) images. However, TEM imaging measurements do not provide direct access to the electronic structure of individual defects; and while Scanning Tunneling Spectroscopy (STS) is a direct probe of local electronic structure, the interpretation of the chemical nature of atomically-resolved STM images of point defects in 2D-TMDs can be ambiguous. As a result, the assignment of point defects as vacancies or substitutional atoms of different kinds in 2D-TMDs, and their influence on their electronic properties, has been inconsistent and lacks consensus. Here, we combine low-temperature non-contact atomic force microscopy (nc-AFM), STS, and state-of-the-art ab initio density functional theory (DFT) and GW calculations to determine both the structure and electronic properties of the most abundant individual chalcogen-site defects common to 2D-TMDs. Surprisingly, we observe no IGS for any of the chalcogen defects probed. Our results and analysis strongly suggest that the common chalcogen defects in our 2D-TMDs, prepared and measured in standard environments, are substitutional oxygen rather than vacancies. △ Less

Submitted 6 March, 2020; v1 submitted 8 October, 2018; originally announced October 2018.

Journal ref: Nat Commun 10, 3382 (2019)

Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2

Authors: Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson, Christoph Kastl, Christopher T. Chen, Sara Barja, Roland J. Koch, D. Frank Ogletree, Shaul Aloni, Adam M. Schwartzberg, Jeffrey B. Neaton, Steven G. Louie, Alexander Weber-Bargioni

Abstract: Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional do** in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure… ▽ More Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional do** in semiconductors. Specifically, deep in-gap defect states of chalcogen vacancies have been associated with intriguing phenomena in monolayer transition metal dichalcogenides (TMDs). Here, we report the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS2 by a combination of CO-tip noncontact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states of the vacancy provide a unique fingerprint of this defect. Direct imaging of the defect orbitals by STM and state-of-the-art GW calculations reveal that the large splitting of 252 meV between these defect states is induced by spin-orbit coupling. The controllable incorporation and potential decoration of chalcogen vacancies provide a new route to tailor the optical, catalytic and magnetic properties of TMDs. △ Less

Submitted 19 August, 2019; v1 submitted 5 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Lett. 123, 076801 (2019)

Bright sub-20 nm cathodoluminescent nanoprobes for multicolor electron microscopy

Authors: Maxim B. Prigozhin, Peter C. Maurer, Alexandra M. Courtis, Nian Liu, Michael D. Wisser, Chris Siefe, Bining Tian, Emory Chan, Guosheng Song, Stefan Fischer, Shaul Aloni, D. Frank Ogletree, Edward S. Barnard, Lydia-Marie Joubert, Jianghong Rao, A. Paul Alivisatos, Roger M. Macfarlane, Bruce E. Cohen, Yi Cui, Jennifer A. Dionne, Steven Chu

Abstract: Electron microscopy (EM) has been instrumental in our understanding of biological systems ranging from subcellular structures to complex organisms. Although EM reveals cellular morphology with nanoscale resolution, it does not provide information on the location of proteins within a cellular context. An EM-based bioimaging technology capable of localizing individual proteins and resolving protein-… ▽ More Electron microscopy (EM) has been instrumental in our understanding of biological systems ranging from subcellular structures to complex organisms. Although EM reveals cellular morphology with nanoscale resolution, it does not provide information on the location of proteins within a cellular context. An EM-based bioimaging technology capable of localizing individual proteins and resolving protein-protein interactions with respect to cellular ultrastructure would provide important insights into the molecular biology of a cell. Here, we report on the development of luminescent nanoprobes potentially suitable for labeling biomolecules in a multicolor EM modality. In this approach, the labels are based on lanthanide-doped nanoparticles that emit light under electron excitation in a process known as cathodoluminescence (CL). Our results suggest that the optimization of nanoparticle composition, synthesis protocols and electron imaging conditions could enable high signal-to-noise localization of biomolecules with a sub-20-nm resolution, limited only by the nanoparticle size. In ensemble measurements, these luminescent labels exhibit narrow spectra of nine distinct colors that are characteristic of the corresponding rare-earth dopant type. △ Less

Submitted 30 May, 2018; originally announced June 2018.

Origin of reversible photo-induced phase separation in hybrid perovskites

Authors: Connor G. Bischak, Craig L. Hetherington, Hao Wu, Shaul Aloni, D. Frank Ogletree, David T. Limmer, Naomi S. Ginsberg

Abstract: Nonequilibrium processes occurring in functional materials can significantly impact device efficiencies and are often difficult to characterize due to the broad range of length and time scales involved. In particular, mixed halide hybrid perovskites are promising for optoelectronics, yet the halides reversibly phase separate when photo-excited, significantly altering device performance. By combini… ▽ More Nonequilibrium processes occurring in functional materials can significantly impact device efficiencies and are often difficult to characterize due to the broad range of length and time scales involved. In particular, mixed halide hybrid perovskites are promising for optoelectronics, yet the halides reversibly phase separate when photo-excited, significantly altering device performance. By combining nanoscale imaging and multiscale modeling, we elucidate the mechanism underlying this phenomenon, demonstrating that local strain induced by photo-generated polarons promotes halide phase separation and leads to nucleation of light-stabilized iodide-rich clusters. This effect relies on the unique electromechanical properties of hybrid materials, characteristic of neither their organic nor inorganic constituents alone. Exploiting photo-induced phase separation and other nonequilibrium phenomena in hybrid materials, generally, could enable new opportunities for expanding the functional applications in sensing, photoswitching, optical memory, and energy storage. △ Less

Submitted 23 June, 2016; v1 submitted 23 June, 2016; originally announced June 2016.

Comments: 6 pages, 3 figures, linked supporting information

Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2

Authors: Sara Barja, Sebastian Wickenburg, Zhen-Fei Liu, Yi Zhang, Hye** Ryu, Miguel M. Ugeda, Zahid Hussain, Z. -X. Shen, Sung-Kwan Mo, Ed Wong, Miquel B. Salmeron, Feng Wang, Michael F. Crommie, D. Frank Ogletree, Jeffrey B. Neaton, Alexander Weber-Bargioni

Abstract: Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2… ▽ More Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2. Our low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a substantial bandgap of 60 - 140 meV opening at the Fermi level in the otherwise one dimensional metallic structure. We find an energy-dependent periodic modulation in the density of states along the mirror twin boundary, with a wavelength of approximately three lattice constants. The modulations in the density of states above and below the Fermi level are spatially out of phase, consistent with charge density wave order. In addition to the electronic characterization, we determine the atomic structure and bonding configuration of the one-dimensional mirror twin boundary by means of high-resolution non-contact atomic force microscopy. Density functional theory calculations reproduce both the gap opening and the modulations of the density of states. △ Less

Submitted 17 March, 2016; originally announced March 2016.

Journal ref: Nature Phys 12, 751-756 (2016)

Local formation of nitrogen-vacancy centers in diamond by swift heavy ions

Authors: J. Schwartz, S. Aloni, D. F. Ogletree, M. Tomut, M. Bender, D. Severin, C. Trautmann, I. W. Rangelow, T. Schenkel

Abstract: We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from ir… ▽ More We exposed nitrogen-implanted diamonds to beams of swift uranium and gold ions (~1 GeV) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV- centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV- yields from irradiations with swift heavy ions are 0.1 of yields from low energy electrons and 0.02 of yields from thermal annealing. We discuss possible mechanisms of NV-center formation by swift heavy ions such as electronic excitations and thermal spikes. While forming NV centers with low efficiency, swift heavy ions enable the formation of three dimensional NV- assemblies over relatively large distances of tens of micrometers. Further, our results show that NV-center formation is a local probe of (partial) lattice damage relaxation induced by electronic excitations from swift heavy ions in diamond. △ Less

Submitted 20 November, 2014; v1 submitted 21 October, 2014; originally announced October 2014.

Comments: to be published in Journal of Applied Physics

Effects of low energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond

Authors: Julian Schwartz, Shaul Aloni, D. Frank Ogletree, Thomas Schenkel

Abstract: Exposure to beams of low energy electrons (2 to 30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron beam induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (80… ▽ More Exposure to beams of low energy electrons (2 to 30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron beam induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800C) following exposure to low energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation. △ Less

Submitted 13 April, 2012; v1 submitted 21 November, 2011; originally announced November 2011.

Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal VO2 beams

Authors: J. Cao, E. Ertekin, V. Srinivasan, W. Fan, S. Huang, H. Zheng, J. W. L. Yim, D. R. Khanal, D. F. Ogletree, J. C. Grossman, J. Wu

Abstract: Spatial phase inhomogeneity at the nano- to microscale is widely observed in strongly-correlated electron materials. The underlying mechanism and possibility of artificially controlling the phase inhomogeneity are still open questions of critical importance for both the phase transition physics and device applications. Lattice strain has been shown to cause the coexistence of metallic and insula… ▽ More Spatial phase inhomogeneity at the nano- to microscale is widely observed in strongly-correlated electron materials. The underlying mechanism and possibility of artificially controlling the phase inhomogeneity are still open questions of critical importance for both the phase transition physics and device applications. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO2. By continuously tuning strain over a wide range in single-crystal VO2 micro- and nanobeams, here we demonstrate the nucleation and manipulation of one-dimensionally ordered metal-insulator domain arrays along the beams. Mott transition is achieved in these beams at room temperature by active control of strain. The ability to engineer phase inhomogeneity with strain lends insight into correlated electron materials in general, and opens opportunities for designing and controlling the phase inhomogeneity of correlated electron materials for micro- and nanoscale device applications. △ Less

Submitted 27 July, 2009; originally announced July 2009.

Comments: 14 pages, 4 figures, with supplementary information