Ultrahigh Magnetic Fields Produced by Shearing Carbon Nanotubes
Authors:
Jian Zhang,
Ya Deng,
Tingting Hao,
Xiao Hu,
Yayun Liu,
Zhisheng Peng,
Jean Pierre Nshimiyimana,
Xiannian Chi,
Pei Wu,
Siyu Liu,
Zhong Zhang,
Junjie Li,
Gongtang Wang,
Weiguo Chu,
Changzhi Gu,
Lianfeng Sun
Abstract:
In laboratories, ultrahigh magnetic fields are usually produced with very large currents through superconducting, resistive or hybrid magnets, which require extreme conditions, such as low temperature, huge cooling water or tens of megawatts of power. In this work we report that when single walled carbon nanotubes (SWNTs) are cut, there are magnetic moments at the shearing end of SWNTs. The averag…
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In laboratories, ultrahigh magnetic fields are usually produced with very large currents through superconducting, resistive or hybrid magnets, which require extreme conditions, such as low temperature, huge cooling water or tens of megawatts of power. In this work we report that when single walled carbon nanotubes (SWNTs) are cut, there are magnetic moments at the shearing end of SWNTs. The average magnetic moment is found to be 41.5+-9.8uB per carbon atom in the end states with a width of 1 nm at temperature of 300.0K, suggesting ultrahigh magnetic fields can be produced. The dangling sigma and pi bonds of the carbon atoms at the shearing ends play important roles for this unexpectedly high magnetic moments because the oxidation temperature of cut SWNTs is found to be as low as 312 in dry air. Producing ultrahigh magnetic field with SWNTs has the advantage of working at higher working temperature and with low energy consumption, suggesting great potentials of applications.
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Submitted 26 June, 2018;
originally announced June 2018.
Ultra-low Power Nanoelectromechanical Memory Based on Location-controllable Nanogap System
Authors:
Jian Zhang,
Ya Deng,
Xiao Hu,
Jean Pierre Nshimiyimana,
Siyu Liu,
Xiannian Chi,
Pei Wu,
Fengliang Dong,
Peipei Chen,
Weiguo Chu,
Haiqing Zhou,
Lianfeng Sun
Abstract:
Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. In this work, we report a rational design of non-volatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SW…
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Nanogap engineering of low-dimensional nanomaterials, has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. In this work, we report a rational design of non-volatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion. The nanogaps are readily realized by electroburning in a partially suspended SWNTs device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultra-low writing energy (4.1*10-19 J per bit), ON/OFF ratio of 105, stable switching ON operations and over 30 hours retention time in ambient conditions, which are of great potential for applications.
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Submitted 11 September, 2017;
originally announced September 2017.
