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Nanopatterning of multicomponent van der Waals heterostructures using atomic force microscopy
Authors:
A. L. Shilov,
L. Elesin,
A. Grebenko,
V. I. Kleshch,
M. A. Kashchenko,
I. Mazurenko,
E. Titova,
E. Zharkova,
D. S. Yakovlev,
K. S. Novoselov,
D. A. Ghazaryan,
V. Dremov,
D. A. Bandurin
Abstract:
Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous e…
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Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous experiments with vdW quantum dots and point contacts. Here we present an alternative approach for electrode-free nanopatterning of thick multilayer vdW heterostructures based on atomic force microscopy (AFM). By applying an AC voltage of a relatively small frequency (1-10 kHz) between the sharp platinum tip and the substrate, we realize high-resolution ($\lesssim 100$ nm) etching of thick multicomponent heterostructures if the latter are deposited onto graphite slabs. Importantly, unlike more conventional electrode-free local anodic oxidation, our method does not require a special environment with excess humidity, can be applied at ambient conditions, and enables the patterning of multilayer heterostructures composed of graphene, graphite, hexagonal boron nitride (hBN), NbSe$_{2}$, WSe$_{2}$, and more.
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Submitted 24 June, 2024;
originally announced June 2024.
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Strongly coupled magneto-exciton condensates in large-angle twisted double bilayer graphene
Authors:
Qingxin Li,
Yiwei Chen,
LingNan Wei,
Hong Chen,
Yan Huang,
Yujian Zhu,
Wang Zhu,
Dongdong An,
Junwei Song,
Qikang Gan,
Qi Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoyang Shi,
Kostya S. Novoselov,
Rui Wang,
Geliang Yu,
Lei Wang
Abstract:
Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An important platform to study such excitonic physics is built on double-layer quantum wells or recent two-dimensional material heterostructures, where two parallel p…
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Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An important platform to study such excitonic physics is built on double-layer quantum wells or recent two-dimensional material heterostructures, where two parallel planes of electrons and holes are separated by a thin insulating layer. Lowering this separation distance ($d$) enhances the interlayer Coulomb interaction thereby strengthens the exciton binding energy. However, an exceedingly small $d$ will lead to the undesired interlayer tunneling, which results the annihilation of excitons. Here, we report the observation of a sequences of robust exciton condensates(ECs) in double bilayer graphenes twisted to $\sim 10^\circ$ with no insulating mid-layer. The large momentum mismatch between the two graphene layers well suppress the interlayer tunneling, allowing us to reach the separation lower limit $\sim$ 0.334 nm and investigate ECs in the extreme coupling regime. Carrying out transport measurements on the bulk and edge of the devices, we find incompressible states corresponding to ECs when both layers are half-filled in the $N=0$ and $N=1$ Landau levels (LLs). The comparison between these ECs and theoretical calculations suggest that the low-energy charged excitation of ECs can be meron-antimeron or particle-hole pair, which relies on both LL index and carrier type. Our results establish large-angle twisted bilayers as an experimental platform with extreme coupling strength for studying quantum bosonic phase and its low-energy excitations.
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Submitted 19 May, 2024;
originally announced May 2024.
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Blood Works for Graphene Production
Authors:
Xiaofan Cai,
Ming Li,
Chao Chen,
Renjun Du,
Zi**g Guo,
** Wang,
Guodong Ma,
Xinglong Wu,
Zhiyuan Wang,
Yaqing Han,
Fuzhuo Lian,
**gkuan Xiao,
Siqi Jiang,
Lei Wang,
Alexander S. Mayorov,
Libo Gao,
Kostya S. Novoselov,
Geliang Yu
Abstract:
Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effectiv…
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Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications.
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Submitted 27 April, 2024;
originally announced April 2024.
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Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene
Authors:
M. Kravtsov,
A. L. Shilov,
Y. Yang,
T. Pryadilin,
M. A. Kashchenko,
O. Popova,
M. Titova,
D. Voropaev,
Y. Wang,
K. Shein,
I. Gayduchenko,
G. N. Goltsman,
M. Lukianov,
A. Kudriashov,
T. Taniguchi,
K. Watanabe,
D. A. Svintsov,
A. Principi,
S. Adam,
K. S. Novoselov,
D. A. Bandurin
Abstract:
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superco…
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Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.
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Submitted 29 March, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides
Authors:
Jarosław Pawłowski,
Pankaj Kumar,
Kenji Watanabe,
Takashi Taniguchi,
Konstantin S. Novoselov,
Hugh O. H. Churchill,
Dharmraj Kotekar-Patil
Abstract:
Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC quantum dot (QD) with well-resolved energy levels. This requires smaller QDs, especially in material systems with heavy carrier effective mass e.g. TMDCs and si…
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Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC quantum dot (QD) with well-resolved energy levels. This requires smaller QDs, especially in material systems with heavy carrier effective mass e.g. TMDCs and silicon. Device architectures employed for TMDC QDs so far have difficulty achieving smaller QDs. Therefore, an alternative approach in the device architecture is needed. Here, we propose a multilayer device architecture to achieve a gate-defined QD in TMDC with a relatively large energy splitting on the QD. We provide a range of device dimensions and dielectric thicknesses and its correlation with the QD energy splitting. The device architecture is modeled realistically. Moreover, we show that all the device parameters used in modeling are experimentally achievable. These studies lay the foundation for future work toward spin-valley qubits in TMDCs. The successful implementation of these device architectures will drive the technological development of 2D materials-based quantum technologies.
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Submitted 1 March, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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Superconductivity in atomically thin films: 2D critical state model
Authors:
Filippo Gaggioli,
Gianni Blatter,
Kostya S. Novoselov,
Vadim B. Geshkenbein
Abstract:
The comprehensive understanding of superconductivity is a multi-scale task that involves several levels, starting from the electronic scale determining the microscopic mechanism, going to the phenomenological scale describing vortices and the continuum-elastic scale describing vortex matter, to the macroscopic scale relevant in technological applications. The prime example for such a macro-phenome…
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The comprehensive understanding of superconductivity is a multi-scale task that involves several levels, starting from the electronic scale determining the microscopic mechanism, going to the phenomenological scale describing vortices and the continuum-elastic scale describing vortex matter, to the macroscopic scale relevant in technological applications. The prime example for such a macro-phenomenological description is the Bean model that is hugely successful in describing the magnetic and transport properties of bulk superconducting devices. Motivated by the development of novel devices based on superconductivity in atomically thin films, such as twisted-layer graphene, here, we present a simple macro-phenomenological description of the critical state in such two-dimensional (2D) thin films. While transverse screening and demagnetization can be neglected in these systems, thereby simplifying the task in comparison with usual film- and platelet shaped samples, surface and bulk pinning are important elements to be included. We use our 2D critical state model to describe the transport and magnetic properties of 2D thin-film devices, including the phenomenon of non-reciprocal transport in devices with asymmetric boundaries and the superconducting diode effect.
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Submitted 12 February, 2024;
originally announced February 2024.
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Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier
Authors:
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Kirill N. Kapralov,
Davit A. Ghazaryan,
Evgenii E. Vdovin,
Sergey V. Morozov,
Kostya S. Novoselov,
Denis A. Bandurin,
Alexander I. Chernov,
Dmitry A. Svintsov
Abstract:
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional…
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Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to the either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature providing a convenient alternative to Johnson noise thermometry.
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Submitted 9 December, 2023;
originally announced December 2023.
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Fundamental limits of few-layer NbSe$_2$ microbolometers at terahertz frequencies
Authors:
K. Shein,
E. Zharkova,
M. A. Kashchenko,
A. I. Kolbatova,
A. Lyubchak,
L. Elesin,
E. Nguyen,
A. Semenov,
I. Charaev,
A. Schilling,
G. N. Goltsman,
K. S. Novoselov,
I. Gayduchenko,
D. A. Bandurin
Abstract:
The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast photoresponse, superconducting hot-electron bolometers (HEBs) have become a critical component in these applications. While superconducting HEBs are…
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The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast photoresponse, superconducting hot-electron bolometers (HEBs) have become a critical component in these applications. While superconducting HEBs are traditionally made from sputtered superconducting thin films like Nb or NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we report the fabrication of superconducting HEBs out of few-layer NbSe$_2$ microwires. By improving the interface between NbSe$_2$ and metal leads connected to a broadband antenna, we overcome the impedance mismatch between this vdW superconductor and the radio frequency (RF) readout circuitry that allowed us to achieve large responsivity THz detection over the range from 0.13 to 2.5 THz with minimum noise equivalent power of 7~pW$\sqrt{Hz}$. Using the heterodyne sub-THz mixing technique, we reveal that NbSe$_2$ superconducting HEBs are relatively fast and feature a characteristic response time in the nanosecond range limited by the slow heat escape to the bath through a SiO$_2$ layer, on which they are assembled, in agreement with energy relaxation model. Our work expands the family of materials for superconducting HEBs technology, reveals NbSe$_2$ as a promising platform, and offers a reliable protocol for the in-lab production of custom bolometers using the vdW assembly technique.
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Submitted 21 November, 2023;
originally announced November 2023.
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High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices
Authors:
A. L. Shilov,
M. A. Kashchenko,
P. A. Pantaleón,
M. Kravtsov,
A. Kudriashov,
Z. Zhan,
T. Taniguchi,
K. Watanabe,
S. Slizovskiy,
K. S. Novoselov,
V. I. Fal'ko,
F. Guinea,
D. A. Bandurin
Abstract:
Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the u…
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Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.
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Submitted 8 November, 2023;
originally announced November 2023.
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Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers
Authors:
Alessandro Catanzaro,
Armando Genco,
Charalambos Louca,
David A. Ruiz-Tijerina,
Daniel J. Gillard,
Luca Sortino,
Aleksey Kozikov,
Evgeny M. Alexeev,
Riccardo Pisoni,
Lee Hague,
Kenji Watanabe,
Takashi Taniguchi,
Klauss Ensslin,
Kostya S. Novoselov,
Vladimir Fal'ko,
Alexander I. Tartakovskii
Abstract:
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M…
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Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties.
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Submitted 23 September, 2023;
originally announced September 2023.
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Exploring van der Waals materials with high anisotropy: geometrical and optical approaches
Authors:
Aleksandr S. Slavich,
Georgy A. Ermolaev,
Mikhail K. Tatmyshevskiy,
Adilet N. Toksumakov,
Olga G. Matveeva,
Dmitriy V. Grudinin,
Arslan Mazitov,
Konstantin V. Kravtsov,
Alexander V. Syuy,
Dmitry M. Tsymbarenko,
Mikhail S. Mironov,
Sergey M. Novikov,
Ivan Kruglov,
Davit A. Ghazaryan,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Valentyn S. Volkov,
Kostya S. Novoselov
Abstract:
The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family…
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The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.
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Submitted 5 September, 2023;
originally announced September 2023.
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Constructing Custom Thermodynamics Using Deep Learning
Authors:
Xiaoli Chen,
Beatrice W. Soh,
Zi-En Ooi,
Eleonore Vissol-Gaudin,
Haijun Yu,
Kostya S. Novoselov,
Kedar Hippalgaonkar,
Qianxiao Li
Abstract:
One of the most exciting applications of artificial intelligence (AI) is automated scientific discovery based on previously amassed data, coupled with restrictions provided by known physical principles, including symmetries and conservation laws. Such automated hypothesis creation and verification can assist scientists in studying complex phenomena, where traditional physical intuition may fail. H…
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One of the most exciting applications of artificial intelligence (AI) is automated scientific discovery based on previously amassed data, coupled with restrictions provided by known physical principles, including symmetries and conservation laws. Such automated hypothesis creation and verification can assist scientists in studying complex phenomena, where traditional physical intuition may fail. Here we develop a platform based on a generalized Onsager principle to learn macroscopic dynamical descriptions of arbitrary stochastic dissipative systems directly from observations of their microscopic trajectories. Our method simultaneously constructs reduced thermodynamic coordinates and interprets the dynamics on these coordinates. We demonstrate its effectiveness by studying theoretically and validating experimentally the stretching of long polymer chains in an externally applied field. Specifically, we learn three interpretable thermodynamic coordinates and build a dynamical landscape of polymer stretching, including the identification of stable and transition states and the control of the stretching rate. Our general methodology can be used to address a wide range of scientific and technological applications.
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Submitted 22 December, 2023; v1 submitted 8 August, 2023;
originally announced August 2023.
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A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
Authors:
E. E. Vdovin,
M. T. Greenaway,
Yu. N. Khanin,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
A. Mishchenko,
S. Slizovskiy,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its…
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Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.
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Submitted 4 July, 2023;
originally announced July 2023.
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Electrical excitation of carbon centers in hexagonal boron nitride with tuneable quantum efficiency
Authors:
M. Grzeszczyk,
K. Vaklinova,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
M. Koperski
Abstract:
Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known examples such as nitrogen-vacancy centers in diamond, silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately…
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Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known examples such as nitrogen-vacancy centers in diamond, silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately, such defect centers embedded in highly insulating crystals have been notoriously difficult to excite electrically. Herewith, we present a realisation of insulating light-emitting diodes based on carbon centers in hexagonal boron nitride. The rational design of the vertical tunnelling devices via van der Waals technology enabled us to control the charge dynamics related to non-radiative tunelling, defect-to-band electroluminescence, and intradefect electroluminescence. The fundamental understanding of the tunnelling events enabled us to achieve high efficiency of electrical excitation, which exceeded by a few orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. A combination of a Stark effect and screening by band electrons provide a control knob for tuning the energy of emission. With this work, we solve an outstanding problem of creating electrically driven devices realised with defect centers in wide-band-gap crystals, which are relevant in the domain of optoelectronics, telecommunication, computation, or sensing.
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Submitted 23 May, 2023;
originally announced May 2023.
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Atomically-precise Vacancy-assembled Quantum Antidots
Authors:
Hanyan Fang,
Harshitra Mahalingam,
Xinzhe Li,
Xu Han,
Zhizhan Qiu,
Yixuan Han,
Keian Noori,
Dikshant Dulal,
Hongfei Chen,
Pin Lyu,
Tianhao Yang,
**g Li,
Chenliang Su,
Wei Chen,
Yongqing Cai,
Antonio Castro H. Neto,
Kostya S. Novoselov,
Aleksandr Rodin,
Jiong Lu
Abstract:
Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well as enabling the precise bandgap engineering of 2D materials to address technological bottleneck issues. However, realizing such atomic-scale quantum an…
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Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to anomalous transport properties and exotic quantum phenomena as well as enabling the precise bandgap engineering of 2D materials to address technological bottleneck issues. However, realizing such atomic-scale quantum antidots (QADs) is infeasible by current nanolithographic techniques. Here, we report an atomically-precise bottom-up fabrication of a series of atomic-scale QADs with elegantly engineered quantum states through a controllable assembly of a chalcogenide single vacancy (SV) in 2D PtTe2, a type-II Dirac semimetal. Te SVs as atomic-scale "antidots" undergo thermal migration and assembly into highly-ordered SV lattices spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of SVs in QADs strengthens the cumulative repulsive potential and consequently enhances collective interference of multiple-pocket scattered quasiparticles inside QADs, creating multi-level quantum hole states with tunable gap from telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of QADs are symmetry-protected and thus survive upon atom-by-atom oxygen substitutional do**. Therefore, SV-assembled QADs exhibit unprecedented robustness and property tunability, which not only holds the key to their future applications but also embody a wide variety of material technologies.
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Submitted 6 May, 2023;
originally announced May 2023.
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A hidden advantage of van der Waals materials for overcoming limitations in photonic integrated circuitry
Authors:
Andrey A. Vyshnevyy,
Georgy A. Ermolaev,
Dmitriy V. Grudinin,
Kirill V. Voronin,
Ivan Kharichkin,
Arslan Mazitov,
Ivan A. Kruglov,
Dmitry I. Yakubovsky,
Prabhash Mishra,
Roman V. Kirtaev,
Aleksey V. Arsenin,
Kostya S. Novoselov,
Luis Martin-Moreno,
Valentyn S. Volkov
Abstract:
With the advance of on-chip nanophotonics, there is a high demand for high refractive index, low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with high refractive index can offer a very advanced alternative. Still, up to now it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development…
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With the advance of on-chip nanophotonics, there is a high demand for high refractive index, low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with high refractive index can offer a very advanced alternative. Still, up to now it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS2-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing the nanophotonic devices.
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Submitted 31 March, 2023;
originally announced April 2023.
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Excited state spectroscopy and spin splitting in atomically thin quantum dots
Authors:
P. Kumar,
H. Kim,
S. Tripathy,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
D. Kotekar-Patil
Abstract:
Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs has yet to reach the required quality for reliable measurement o…
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Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs has yet to reach the required quality for reliable measurement of g-factor. Quantum dot sizes reported in TMDCs so far are not small enough to observe discrete energy levels on them. Here, we report on electron transport through discrete energy levels of quantum dot in a single layer MoS2. The quantum dot energy levels are separated by few (5-6) meV such that the ground state and the excited state transitions are clearly visible. This well resolved energy separation allows us to accurately measure the ground state g-factor of ~5 in MoS2 quantum dots. We observe a spin filling sequence in our quantum dot under perpendicular magnetic field. Such a system offers an excellent testbed to measure the key parameters for evaluation and implementation of spin-valley qubits in TMDCs, thus accelerating the development of quantum systems in two dimensional semiconducting TMDCs.
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Submitted 27 March, 2023;
originally announced March 2023.
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Hexagonal boron nitride nanophotonics
Authors:
D. V. Grudinin,
G. A. Ermolaev,
D. G. Baranov,
A. N. Toksumakov,
K. V. Voronin,
A. S. Slavich,
A. A. Vyshnevyy,
A. B. Mazitov,
I. A. Kruglov,
D. Ghazaryan,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotro…
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A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotropy and prospects of high-quality monocrystals growth with atomically flat surface. Here, we present highly accurate optical constants of hBN in the broad wavelength range of 250-1700 nm combining the imaging ellipsometry measurements scanning near-field optical microscopy and first-principle quantum mechanical computations. hBN's high refractive index, up to 2.75 in ultraviolet (UV) and visible range, broadband birefringence of 0.7, and negligible optical losses make it an outstanding material for UV and visible range photonics. Based on our measurement results, we propose and design novel optical elements: handedness-preserving mirrors and subwavelength waveguides with dimensions of 40 nm operating in the visible and UV range, respectively. Remarkably, our results offer unique opportunity to bridge the size-gap between photonics and electronics.
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Submitted 5 March, 2023;
originally announced March 2023.
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pH-dependent water permeability switching and its memory in 1T' MoS$_2$ membranes
Authors:
C. Hu,
A. Achari,
P. Rowe,
H. Xiao,
S. Suran,
Z. Li,
K. Huang,
C. Chi,
C. T. Cherian,
V. Sreepal,
P. D. Bentley,
A. Pratt,
N. Zhang,
K. S. Novoselov,
A. Michaelides,
R. R. Nair
Abstract:
Intelligent transport of molecular species across different barriers is critical for various biological functions and is achieved through the unique properties of biological membranes. An essential feature of intelligent transport is the ability to adapt to different external and internal conditions and also the ability to memorise the previous state. In biological systems, the most common form of…
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Intelligent transport of molecular species across different barriers is critical for various biological functions and is achieved through the unique properties of biological membranes. An essential feature of intelligent transport is the ability to adapt to different external and internal conditions and also the ability to memorise the previous state. In biological systems, the most common form of such intelligence is expressed as hysteresis. Despite numerous advances made over previous decades on smart membranes, it is still a challenge for a synthetic membrane to display stable hysteretic behaviour for molecular transport. Here we show the memory effects and stimuli regulated transport of molecules through an intelligent phase changing MoS$_2$ membrane in response to external pH. We show that water and ion permeation through 1T' MoS$_2$ membranes follows a pH dependent hysteresis with a permeation rate that switches by a few orders of magnitude. We demonstrate that this phenomenon is unique to the 1T' phase of MoS$_2$ due to the presence of surface charge and exchangeable ions on the surface. We further demonstrate the potential application of this phenomenon in autonomous wound infection monitoring and pH-dependent nanofiltration. Our work significantly deepens understanding of the mechanism of water transport at the nanoscale and opens an avenue for develo** neuromorphic applications, smart drug delivery systems, point-of-care diagnostics, smart sensors, and intelligent filtration devices.
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Submitted 24 January, 2023;
originally announced January 2023.
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Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Authors:
Dmitry Mylnikov,
Elena I. Titova,
Mikhail A. Kashchenko,
Ilya V. Safonov,
Sergey S. Zhukov,
Valentin A. Semkin,
Kostya S. Novoselov,
Denis A. Bandurin,
Dmitry A. Svintsov
Abstract:
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gappe…
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Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel do** even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
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Submitted 8 December, 2022;
originally announced December 2022.
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Unveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasets
Authors:
Pengru Huang,
Ruslan luckin,
Maxim Faleev,
Nikita Kazeev,
Abdalaziz Rashid Al-Maeeni,
Daria V. Andreeva,
Andrey Ustyuzhanin,
Alexander Tormasov,
A. H. Castro Neto,
Kostya S. Novoselov
Abstract:
Modification of physical properties of materials and design of materials with on-demand characteristics is at the heart of modern technology. Rare application relies on pure materials--most devices and technologies require careful design of materials properties through alloying, creating heterostructures of composites or controllable introduction of defects. At the same time, such designer materia…
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Modification of physical properties of materials and design of materials with on-demand characteristics is at the heart of modern technology. Rare application relies on pure materials--most devices and technologies require careful design of materials properties through alloying, creating heterostructures of composites or controllable introduction of defects. At the same time, such designer materials are notoriously difficult for modelling. Thus, it is very tempting to apply machine learning methods for such systems. Unfortunately, there is only a handful of machine learning-friendly material databases available these days. We develop a platform for easy implementation of machine learning techniques to materials design and populate it with datasets on pristine and defected materials. Here we describe datasets of defects in represented 2D materials such as MoS2, WSe2, hBN, GaSe, InSe, and black phosphorous, calculated using DFT. Our study provides a data-driven physical understanding of complex behaviors of defect properties in 2D materials, holding promise for a guide to the development of efficient machine learning models. In addition, with the increasing enrollment of datasets, our database could provide a platform for designing of materials with predetermined properties.
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Submitted 5 December, 2022;
originally announced December 2022.
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Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface
Authors:
Ciaran Mullan,
Sergey Slizovskiy,
Jun Yin,
Ziwei Wang,
Qian Yang,
Shuigang Xu,
Ya** Yang,
Benjamin A. Piot,
Sheng Hu,
Takashi Taniguchi,
Kenji Watanabe,
Kostya S. Novoselov,
A. K. Geim,
Vladimir I. Fal'ko,
Artem Mishchenko
Abstract:
Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can also be tuned by the superlattice potential arising at the interface with another crystal, namel…
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Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can also be tuned by the superlattice potential arising at the interface with another crystal, namely, crystallographically aligned hexagonal boron nitride. Such alignment is found to result in a multitude of Lifshitz transitions and Brown-Zak oscillations for near-surface 2D states whereas, in high magnetic fields, fractal states of Hofstadter's butterfly extend deep into graphite's bulk. Our work shows a venue to control 3D spectra by using the approach of 2D twistronics.
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Submitted 29 November, 2022;
originally announced November 2022.
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Breaking through the Mermin-Wagner limit in 2D van der Waals magnets
Authors:
Sarah Jenkins,
Levente Rozsa,
Unai Atxitia,
Richard F. L. Evans,
Kostya S. Novoselov,
Elton J. G. Santos
Abstract:
The Mermin-Wagner theorem states that long-range magnetic order does not exist in one- or two-dimensional (2D) isotropic magnets with short-ranged interactions. The theorem has been a milestone in magnetism and has been driving the research of recently discovered 2D van der Waals (vdW) magnetic materials from fundamentals up to potential applications. In such systems, the existence of magnetic ord…
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The Mermin-Wagner theorem states that long-range magnetic order does not exist in one- or two-dimensional (2D) isotropic magnets with short-ranged interactions. The theorem has been a milestone in magnetism and has been driving the research of recently discovered 2D van der Waals (vdW) magnetic materials from fundamentals up to potential applications. In such systems, the existence of magnetic ordering is typically attributed to the presence of a significant magnetic anisotropy, which is known to introduce a spin-wave gap and circumvent the core assumption of the theorem. Here we show that in finite-size 2D vdW magnets typically found in lab setups (e.g., within millimetres), short-range interactions can be large enough to allow the stabilisation of magnetic order at finite temperatures without any magnetic anisotropy for practical implementations. We demonstrate that magnetic ordering can be created in flakes of 2D materials independent of the lattice symmetry due to the intrinsic nature of the spin exchange interactions and finite-size effects in two-dimensions. Surprisingly we find that the crossover temperature, where the intrinsic magnetisation changes from superparamagnetic to a completely disordered paramagnetic regime, is weakly dependent on the system length, requiring giant sizes (e.g., of the order of the observable universe ~10$^{26}$ m) in order to observe the vanishing of the magnetic order at cryogenic temperatures as expected from the Mermin-Wagner theorem. Our findings indicate exchange interactions as the main driving force behind the stabilisation of short-range order in 2D magnetism and broaden the horizons of possibilities for exploration of compounds with low anisotropy at an atomically thin level.
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Submitted 10 October, 2022;
originally announced October 2022.
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Polygonal tessellations as predictive models of molecular monolayers
Authors:
Krisztina Regős,
Rémy Pawlak,
Xing Wang,
Ernst Meyer,
Silvio Decurtins,
Gábor Domokos,
Kostya S. Novoselov,
Shi-Xia Liu,
Ulrich Aschauer
Abstract:
Molecular self-assembly plays a very important role in various aspects of technology as well as in biological systems. Governed by the covalent, hydrogen or van der Waals interactions - self-assembly of alike molecules results in a large variety of complex patterns even in two dimensions (2D). Prediction of pattern formation for 2D molecular networks is extremely important, though very challenging…
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Molecular self-assembly plays a very important role in various aspects of technology as well as in biological systems. Governed by the covalent, hydrogen or van der Waals interactions - self-assembly of alike molecules results in a large variety of complex patterns even in two dimensions (2D). Prediction of pattern formation for 2D molecular networks is extremely important, though very challenging, and so far, relied on computationally involved approaches such as density functional theory, classical molecular dynamics, Monte Carlo, or machine learning. Such methods, however, do not guarantee that all possible patterns will be considered and often rely on intuition. Here we introduce a much simpler, though rigorous, hierarchical geometric model founded on the mean-field theory of 2D polygonal tessellations to predict extended network patterns based on molecular-level information. Based on graph theory, this approach yields pattern classification and pattern prediction within well-defined ranges. When applied to existing experimental data, our model provides an entirely new view of self-assembled molecular patterns, leading to interesting predictions on admissible patterns and potential additional phases. While developed for hydrogen-bonded systems, an extension to covalently bonded graphene-derived materials or 3D structures such as fullerenes is possible, significantly opening the range of potential future applications.
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Submitted 8 August, 2022;
originally announced August 2022.
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Optical signature of cascade transitions between moiré interlayer excitons
Authors:
Qinghai Tan,
Abdullah Rasmita,
Zhaowei Zhang,
K. S. Novoselov,
Wei-bo Gao
Abstract:
Cascade transition between energy levels has important applications, such as in quantum information protocols and quantum cascade lasers. In two-dimensional heterostructure, the moiré superlattice potential can result in multiple interlayer exciton (IX) energy levels. We demonstrate the cascade transitions between such moiré IXs by performing time- and energy-resolved photoluminescence measurement…
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Cascade transition between energy levels has important applications, such as in quantum information protocols and quantum cascade lasers. In two-dimensional heterostructure, the moiré superlattice potential can result in multiple interlayer exciton (IX) energy levels. We demonstrate the cascade transitions between such moiré IXs by performing time- and energy-resolved photoluminescence measurements. We show that the lower-energy moiré IX can be excited to higher-energy ones, facilitating IX population inversion.
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Submitted 21 February, 2022;
originally announced February 2022.
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Carbon and vacancy centers in hexagonal boron nitride
Authors:
P. Huang,
M. Grzeszczyk,
K. Vaklinova,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
M. Koperski
Abstract:
Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of formation of defects in hexagonal boron nitride based on vacancies and substitutional atoms. Through in-depth analysis of the defect-induced band structure and for…
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Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of formation of defects in hexagonal boron nitride based on vacancies and substitutional atoms. Through in-depth analysis of the defect-induced band structure and formation energy in varying growth conditions, we uncovered a dominant role of interdefect electron paring in stabilization of defect complexes. The electron reorganization modifies the exchange component of the electronic interactions which dominates over direct Coulomb repulsion or structural relaxation effects making the combination of acceptor- and donor-type defect centers energetically favorable. Based on an analysis of a large number of defect complexes we develop a simple picture of the inheritance of electronic properties when individual defects are combined together to form more complex centers.
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Submitted 29 December, 2021;
originally announced December 2021.
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Self-repairing high entropy oxides
Authors:
Zongwen Liu,
Pengru Huang,
Lixian Sun,
Yan** Liu,
Jiangtao Qu,
Julie Cairney,
Zhong Zheng,
Zhiming M. Wang,
Naveed A. Khan,
Zhi** Lai,
Li Fu,
Bing Teng,
Cuifeng Zhou,
Hong Zhao,
Fen Xu,
Pan Xiong,
Junwu Zhu,
Peng Yuan,
Kosta Tsoutas,
Behnam Akhavan,
Marcela M. Bilek,
Simon P. Ringer,
Kostya S. Novoselov
Abstract:
All biological organisms, from plants to living creatures, can heal minor wounds and damage. The realization of a similar self-healing capacity in inorganic materials has been a design target for many decades. This would represent a breakthrough in materials engineering, enabling many novel technological applications, since such materials would be able to resist damage caused by electromagnetic ir…
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All biological organisms, from plants to living creatures, can heal minor wounds and damage. The realization of a similar self-healing capacity in inorganic materials has been a design target for many decades. This would represent a breakthrough in materials engineering, enabling many novel technological applications, since such materials would be able to resist damage caused by electromagnetic irradiation and/or mechanical impact. Here we demonstrate that a high-entropy oxide is intrinsically capable of undergoing an autonomous self-repairing process. Transmission electron microscopy revealed that the spinel structure of (AlCoCrCu0.5FeNi)3O4 can regrow and repair itself at the atomic level when damaged. Density functional theory calculations reveal that the extra enthalpy stored in the high entropy material during fabrication can be released to effectively heal macroscopic defects by regrowing into a partially ordered state. This extraordinary self-repairing phenomenon makes this new material highly desirable as a coating, enabling structures used in harsh environments to better withstand damage, such as cosmic irradiation in space, nuclear irradiation in nuclear power facilities, or tribological damage. Most importantly, our results set the general design principles for the synthesis of self-repairing materials.
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Submitted 22 December, 2021;
originally announced December 2021.
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Transition metal dichalcogenide nanospheres for high-refractive-index nanophotonics and biomedical theranostics
Authors:
G. I. Tselikov,
G. A. Ermolaev,
A. A. Popov,
G. V. Tikhonowski,
A. S. Taradin,
A. A. Vyshnevyy,
A. V. Syuy,
S. M. Klimentov,
S. M. Novikov,
A. B. Evlyukhin,
A. V. Kabashin,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
Recent developments in the area of resonant dielectric nanostructures has created attractive opportunities for the concentrating and manipulating light at the nanoscale and the establishment of new exciting field of all-dielectric nanophotonics. Transition metal dichalcogenides (TMDCs) with nanopatterned surfaces are especially promising for these tasks. Still, the fabrication of these structures…
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Recent developments in the area of resonant dielectric nanostructures has created attractive opportunities for the concentrating and manipulating light at the nanoscale and the establishment of new exciting field of all-dielectric nanophotonics. Transition metal dichalcogenides (TMDCs) with nanopatterned surfaces are especially promising for these tasks. Still, the fabrication of these structures requires sophisticated lithographic processes, drastically complicating application prospects. To bridge this gap and broaden the application scope of TMDC nanomaterials, we report here femtosecond laser-ablative fabrication of water-dispersed spherical TMDC (MoS2 and WS2) nanoparticles (NPs) of variable size (5 - 250 nm). Such nanoparticles demonstrate exciting optical and electronic properties inherited from TMDC crystals, due to preserved crystalline structure, which offers a unique combination of pronounced excitonic response and high refractive index value, making possible a strong concentration of electromagnetic field in the nanoparticles. Furthermore, such nanoparticles offer additional tunability due to hybridization between the Mie and excitonic resonances. Such properties bring to life a number of nontrivial effects, including enhanced photoabsorption and photothermal conversion. As an illustration, we demonstrate that the nanoparticles exhibit a very strong photothermal response, much exceeding that of conventional dielectric nanoresonators based on Si. Being in a mobile colloidal state and exhibiting superior optical properties compared to other dielectric resonant structures, the synthesized TMDC nanoparticles offer opportunities for the development of next-generation nanophotonic and nanotheranostic platforms, including photothermal therapy and multimodal bioimaging.
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Submitted 27 November, 2021;
originally announced November 2021.
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ZnPSe$_3$ as ultrabright indirect bandgap system with microsecond excitonic lifetimes
Authors:
M. Grzeszczyk,
K. S. Novoselov,
M. Koperski
Abstract:
We report an optical characterization of ZnPSe$_3$ crystals that demonstrates indirect band gap characteristics in combination with unusually strong photoluminescence. We found evidence of interband recombination from excitonic states with microsecond lifetimes. Through optical characterization, we reconstructed the electronic band scheme relevant for fundamental processes of light absorption, car…
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We report an optical characterization of ZnPSe$_3$ crystals that demonstrates indirect band gap characteristics in combination with unusually strong photoluminescence. We found evidence of interband recombination from excitonic states with microsecond lifetimes. Through optical characterization, we reconstructed the electronic band scheme relevant for fundamental processes of light absorption, carrier relaxation and radiative recombination. The investigation of the radiative processes in the presence of magnetic field revealed spin polarization of fundamental electronic states. This observation opens a pathway towards controlling the spin of excitonic states in technologically relevant microsecond timescales.
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Submitted 14 November, 2021;
originally announced November 2021.
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Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities
Authors:
Z. Qiu,
K. Vaklinova,
P. Huang,
M. Grzeszczyk,
H. Yang,
K. Watanabe,
T. Taniguchi,
K. S. Novoselov,
J. Lu,
M. Koperski
Abstract:
Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative du…
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Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.
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Submitted 17 March, 2024; v1 submitted 14 October, 2021;
originally announced October 2021.
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Non-Hermitian engineering of terahertz light using exceptional points in electrically tuneable collective light-matter interactions
Authors:
M. Said Ergoktas,
Sina Soleymani,
Nurbek Kakenov,
Thomas B. Smith,
Gokhan Bakan,
Kaiyuan Wang,
Sinan Balci,
Alessandro Principi,
Kostya S. Novoselov,
Sahin K. Ozdemir,
Coskun Kocabas
Abstract:
The topological structure associated with the branchpoint singularity around an exceptional point (EP) provides new tools for controlling the propagation of electromagnetic waves and their interaction with matter. To date, observation of EPs in light-matter interactions has remained elusive and has hampered further progress in applications of EP physics. Here, we demonstrate the emergence of EPs i…
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The topological structure associated with the branchpoint singularity around an exceptional point (EP) provides new tools for controlling the propagation of electromagnetic waves and their interaction with matter. To date, observation of EPs in light-matter interactions has remained elusive and has hampered further progress in applications of EP physics. Here, we demonstrate the emergence of EPs in the electrically controlled interaction of light with a collection of organic molecules in the terahertz regime at room temperature. We show, using time-domain terahertz spectroscopy, that the intensity and phase of terahertz pulses can be controlled by a gate voltage which drives the device across the EP. This fully electrically-tuneable system allows reconstructing the Riemann surface associated with the complex energy landscape and provides a topological control of light by tuning the loss-imbalance and frequency detuning of interacting modes. We anticipate that our work could pave the way for new means of dynamic control on the intensity and phase of terahertz field, develo** topological optoelectronics, and studying the manifestations of EP physics in the quantum correlations of the light emitted by a collection of emitters coupled to resonators.
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Submitted 26 August, 2021;
originally announced August 2021.
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Ion exchange in atomically thin clays and micas
Authors:
Yi-Chao Zou,
Lucas Mogg,
Nick Clark,
Cihan Bacaksiz,
Slavisa Milanovic,
Vishnu Sreepal,
Guang-** Hao,
Yi-Chi Wang,
David G. Hopkinson,
Roman Gorbachev,
Samuel Shaw,
Kostya S. Novoselov,
Rahul Raveendran-Nair,
Francois M. Peeters,
Marcelo Lozada-Hidalgo,
Sarah J. Haigh
Abstract:
Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomical…
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Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomically thin materials. Here we use atomic-resolution scanning transmission electron microscopy to study the dynamics of the process and reveal the binding sites of individual ions in atomically thin and artificially restacked clays and micas. Imaging ion exchange after different exposure time and for different crystal thicknesses, we find that the ion diffusion constant, D, for the interlayer space of atomically thin samples is up to 10^4 times larger than in bulk crystals and approaches its value in free water. Surprisingly, samples where no bulk exchange is expected display fast exchange if the mica layers are twisted and restacked; but in this case, the exchanged ions arrange in islands controlled by the moiré superlattice dimensions. We attribute the fast ion diffusion to enhanced interlayer expandability resulting from weaker interlayer binding forces in both atomically thin and restacked materials. Finally, we demonstrate images of individual surface cations for these materials, which had remained elusive in previous studies. This work provides atomic scale insights into ion diffusion in highly confined spaces and suggests strategies to design novel exfoliated clays membranes.
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Submitted 14 July, 2021;
originally announced July 2021.
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Out-of-equilibrium criticalities in graphene superlattices
Authors:
Alexey I. Berdyugin,
Na Xin,
Haoyang Gao,
Sergey Slizovskiy,
Zhiyu Dong,
Shubhadeep Bhattacharjee,
P. Kumaravadivel,
Shuigang Xu,
L. A. Ponomarenko,
Matthew Holwill,
D. A. Bandurin,
Minsoo Kim,
Yang Cao,
M. T. Greenaway,
K. S. Novoselov,
I. V. Grigorieva,
K. Watanabe,
T. Taniguchi,
V. I. Fal'ko,
L. S. Levitov,
R. Krishna Kumar,
A. K. Geim
Abstract:
In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-cu…
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In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.
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Submitted 11 February, 2022; v1 submitted 23 June, 2021;
originally announced June 2021.
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Van der Waals interaction affects wrinkle formation in two-dimensional materials
Authors:
Pablo Ares,
Yi Bo Wang,
Colin R. Woods,
James Dougherty,
Laura Fumagalli,
Francisco Guinea,
Benny Davidovitch,
Kostya S. Novoselov
Abstract:
Nonlinear mechanics of solids is an exciting field that encompasses both beautiful mathematics, such as the emergence of instabilities and the formation of complex patterns, as well as multiple applications. Two-dimensional crystals and van der Waals (vdW) heterostructures allow revisiting this field on the atomic level, allowing much finer control over the parameters and offering atomistic interp…
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Nonlinear mechanics of solids is an exciting field that encompasses both beautiful mathematics, such as the emergence of instabilities and the formation of complex patterns, as well as multiple applications. Two-dimensional crystals and van der Waals (vdW) heterostructures allow revisiting this field on the atomic level, allowing much finer control over the parameters and offering atomistic interpretation of experimental observations. In this work, we consider the formation of instabilities consisting of radially-oriented wrinkles around mono- and few-layer "bubbles" in two-dimensional vdW heterostructures. Interestingly, the shape and wavelength of the wrinkles depend not only on the thickness of the two-dimensional crystal forming the bubble, but also on the atomistic structure of the interface between the bubble and the substrate, which can be controlled by their relative orientation. We argue that the periodic nature of these patterns emanates from an energetic balance between the resistance of the top membrane to bending, which favors large wavelength of wrinkles, and the membrane-substrate vdW attraction, which favors small wrinkle amplitude. Employing the classical "Winkler foundation" model of elasticity theory, we show that the number of radial wrinkles conveys a valuable relationship between the bending rigidity of the top membrane and the strength of the vdW interaction. Armed with this relationship, we use our data to demonstrate a nontrivial dependence of the bending rigidity on the number of layers in the top membrane, which shows two different regimes driven by slippage between the layers, and a high sensitivity of the vdW force to the alignment between the substrate and the membrane.
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Submitted 27 May, 2021;
originally announced May 2021.
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Twisted monolayer and bilayer graphene for vertical tunneling transistors
Authors:
Davit A. Ghazaryan,
Abhishek Misra,
Evgenii E. Vdovin,
Kenji Watanabe,
Takashi Taniguchi,
Sergei V. Morozov,
Artem Mishchenko,
Kostya S. Novoselov
Abstract:
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Un…
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We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.
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Submitted 25 March, 2021;
originally announced March 2021.
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Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$
Authors:
Alexey Falin,
Matthew Holwill,
Haifeng Lv,
Wei Gan,
Jun Cheng,
Rui Zhang,
Dong Qian,
Matthew R. Barnett,
Elton J. G. Santos,
Konstantin S. Novoselov,
Tao Tao,
Xiaojun Wu,
Lu Hua Li
Abstract:
Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS…
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Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen do**, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs).
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Submitted 28 January, 2021;
originally announced January 2021.
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Two-dimensional adaptive membranes with programmable water and ionic channels
Authors:
Daria V. Andreeva,
Maxim Trushin,
Anna Nikitina,
Mariana C. F. Costa,
Pavel V. Cherepanov,
Matthew Holwill,
Siyu Chen,
Kou Yang,
See Wee Chee,
Utkur Mirsaidov,
Antonio H. Castro Neto,
Kostya S. Novoselov
Abstract:
Membranes are ubiquitous in nature with primary functions that include adaptive filtering and selective transport of chemical and molecular species. Being critical to cellular functions, they are also fundamental in many areas of science and technology. Of particular importance are the adaptive and programmable membranes that can change their permeability or selectivity depending on the environmen…
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Membranes are ubiquitous in nature with primary functions that include adaptive filtering and selective transport of chemical and molecular species. Being critical to cellular functions, they are also fundamental in many areas of science and technology. Of particular importance are the adaptive and programmable membranes that can change their permeability or selectivity depending on the environment. Here, we explore implementation of such biological functions in artificial membranes and demonstrate two dimensional self assembled heterostructures of graphene oxide and polyamine macromolecules, forming a network of ionic channels that exhibit regulated permeability of water and monovalent ions. This permeability can be tuned by a change of pH or the presence of certain ions. Unlike traditional membranes, the regulation mechanism reported here relies on specific interactions between the membranes internal components and ions. This allows fabrication of membranes with programmable, predetermined permeability and selectivity, governed by the choice of components, their conformation and their charging state.
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Submitted 10 December, 2020;
originally announced December 2020.
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Properties and dynamics of meron topological spin textures in the two-dimensional magnet CrCl3
Authors:
Mathias Augustin,
Sarah Jenkins,
Richard F. L. Evans,
Kostya S. Novoselov,
Elton J. G. Santos
Abstract:
Merons are nontrivial topological spin textures highly relevant for many phenomena in solid state physics. Despite their importance, direct observation of such vortex quasiparticles is scarce and has been limited to a few complex materials. Here we show the emergence of merons and antimerons in recently discovered two-dimensional (2D) CrCl3 at zero magnetic field. We show their entire evolution fr…
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Merons are nontrivial topological spin textures highly relevant for many phenomena in solid state physics. Despite their importance, direct observation of such vortex quasiparticles is scarce and has been limited to a few complex materials. Here we show the emergence of merons and antimerons in recently discovered two-dimensional (2D) CrCl3 at zero magnetic field. We show their entire evolution from pair creation, their diffusion over metastable domain walls, and collision leading to large magnetic monodomains. Both quasiparticles are stabilized spontaneously during cooling at regions where in-plane magnetic frustration takes place. Their dynamics is determined by the interplay between the strong in-plane dipolar interactions and the weak out-of-plane magnetic anisotropy stabilising a vortex core within a radius of 8-10 nm. Our results push the boundary to what is currently known about non-trivial spin structures in 2D magnets and open exciting opportunities to control magnetic domains via topological quasiparticles.
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Submitted 27 January, 2021; v1 submitted 6 December, 2020;
originally announced December 2020.
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Quantum rescaling, domain metastability and hybrid domain-walls in two-dimensional CrI3 magnets
Authors:
Dina Abdul-Wahab,
Mathias Augustin,
Samuel Manas Valero,
Wenjun Kuang,
Sarah Jenkins,
Eugenio Coronado,
Irina V. Grigorieva,
Ivan J. Vera-Marun,
Efren Navarro-Moratalla,
Richard F. L. Evans,
Kostya S. Novoselov,
Elton J. G. Santos
Abstract:
Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) CrI3 as a quantum non-Heisenberg material with properties far beyond an Ising magnet as initially assumed. We find that biquadratic exchange interaction…
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Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) CrI3 as a quantum non-Heisenberg material with properties far beyond an Ising magnet as initially assumed. We find that biquadratic exchange interactions are essential to quantitatively describe the magnetism of CrI3 but requiring quantum rescaling corrections to reproduce its thermal properties. The quantum nature of the heat bath represented by discrete electron-spin and phonon-spin scattering processes induced the formation of spin fluctuations in the low temperature regime. These fluctuations induce the formation of metastable magnetic domains evolving into a single macroscopic magnetization or even a monodomain over surface areas of a few micrometers. Such domains display hybrid characteristics of Neel and Bloch types with a narrow domain wall width in the range of 3-5 nm. Similar behaviour is expected for the majority of 2D vdW magnets where higher-order exchange interactions are appreciable.
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Submitted 5 November, 2020;
originally announced November 2020.
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Ultrafast current and field driven domain-wall dynamics in van der Waals antiferromagnet MnPS3
Authors:
Ignacio M. Alliati,
Richard F. L. Evans,
Kostya S. Novoselov,
Elton J. G. Santos
Abstract:
The discovery of magnetism in two-dimensional (2D) van der Waals (vdW) materials has flourished a new endeavour of fundamental problems in magnetism as well as potential applications in computing, sensing and storage technologies. Of particular interest are antiferromagnets, which due to their intrinsic antiferromagnetic exchange coupling show several advantages in relation to ferromagnets such as…
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The discovery of magnetism in two-dimensional (2D) van der Waals (vdW) materials has flourished a new endeavour of fundamental problems in magnetism as well as potential applications in computing, sensing and storage technologies. Of particular interest are antiferromagnets, which due to their intrinsic antiferromagnetic exchange coupling show several advantages in relation to ferromagnets such as robustness against external magnetic perturbations. This property is one of the cornerstones of antiferromagnets and implies that information stored in antiferromagnetic domains is invisible to applied magnetic fields preventing it from being erased or manipulated. Here we show that, despite this fundamental understanding, the magnetic domains of recently discovered vdW MnPS3 antiferromagnet can be controlled via external magnetic fields and currents. We realize ultrafast domain-wall dynamics with velocities up to 1500 m/s and 3000 m/s respectively to a broad range of fields and current densities. Both domain wall dynamics are determined by the edge terminations which generated uncompensated spins following the underlying symmetry of the honeycomb structure. We find that edge atoms belonging to different magnetic sublattices function as geometrical constrictions preventing the displacement of the wall, whereas having atoms of the same sublattice at both edges of the material allows for the field-driven domain wall motion which is only limited by the spin-flop transition of the antiferromagnet beyond 25 T. Conversely, electric currents can induce motion of domain walls in most of the edges except those where the two sublattices are present at the borders (e.g. armchair edges). Our results indicate that the implementation of 2D vdW antiferromagnets in real applications requires the engineering of the layer edges which enables an unprecedented functional feature in ultrathin device platforms.
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Submitted 3 November, 2020; v1 submitted 20 October, 2020;
originally announced October 2020.
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Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride
Authors:
C. R. Woods,
P. Ares,
H. Nevison-Andrews,
M. J. Holwill,
R. Fabregas,
F. Guinea,
A. K. Geim,
K. S. Novoselov,
N. R. Walet,
L. Fumagalli
Abstract:
When two-dimensional crystals are brought into close proximity, their interaction results in strong reconstruction of electronic spectrum and local crystal structure. Such reconstruction strongly depends on the twist angle between the two crystals and has received growing attention due to new interesting electronic and optical properties that arise in graphene and transitional metal dichalcogenide…
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When two-dimensional crystals are brought into close proximity, their interaction results in strong reconstruction of electronic spectrum and local crystal structure. Such reconstruction strongly depends on the twist angle between the two crystals and has received growing attention due to new interesting electronic and optical properties that arise in graphene and transitional metal dichalcogenides. Similarly, novel and potentially useful properties are expected to appear in insulating crystals. Here we study two insulating crystals of hexagonal boron nitride (hBN) stacked at a small twist angle. Using electrostatic force microscopy, we observe ferroelectric-like domains arranged in triangular superlattices with a large surface potential that is independent on the size and orientation of the domains as well as the thickness of the twisted hBN crystals. The observation is attributed to interfacial elastic deformations that result in domains with a large density of out-of-plane polarized dipoles formed by pairs of boron and nitrogen atoms belonging to the opposite interfacial surfaces. This effectively creates a bilayer-thick ferroelectric with oppositely polarized (BN and NB) dipoles in neighbouring domains, in agreement with our modelling. The demonstrated electrostatic domains and their superlattices offer many new possibilities in designing novel van der Waals heterostructures.
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Submitted 14 October, 2020;
originally announced October 2020.
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In situ twistronics of van der Waals heterostructures
Authors:
Ya** Yang,
Jidong Li,
Jun Yin,
Shuigang Xu,
Ciaran Mullan,
Takashi Taniguchi,
Kenji Watanabe,
A. K. Geim,
Konstantin S. Novoselov,
Artem Mishchenko
Abstract:
In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by a moire pattern induced by twist angles between different layers. Such process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here we demon…
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In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by a moire pattern induced by twist angles between different layers. Such process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique we fabricated heterostructures where graphene is perfectly aligned with both top and bottom encapsulating layers of hexagonal boron nitride. Our technique enables twisted 2D material systems in one single stack with dynamically tunable optical, mechanical, and electronic properties.
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Submitted 8 October, 2020;
originally announced October 2020.
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Holographic reconstruction of the interlayer distance of bilayer two-dimensional crystal samples from their convergent beam electron diffraction patterns
Authors:
Tatiana Latychevskaia,
Yichao Zou,
Colin Robert Woods,
Yi Bo Wang,
Matthew Holwill,
Eric Prestat,
Sarah J. Haigh,
Kostya S. Novoselov
Abstract:
The convergent beam electron diffraction (CBED) patterns of twisted bilayer samples exhibit interference patterns in their CBED spots. Such interference patterns can be treated as off-axis holograms and the phase of the scattered waves, meaning the interlayer distance can be reconstructed. A detailed protocol of the reconstruction procedure is provided in this study. In addition, we derive an exac…
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The convergent beam electron diffraction (CBED) patterns of twisted bilayer samples exhibit interference patterns in their CBED spots. Such interference patterns can be treated as off-axis holograms and the phase of the scattered waves, meaning the interlayer distance can be reconstructed. A detailed protocol of the reconstruction procedure is provided in this study. In addition, we derive an exact formula for reconstructing the interlayer distance from the recovered phase distribution, which takes into account the different chemical compositions of the individual monolayers. It is shown that one interference fringe in a CBED spot is sufficient to reconstruct the distance between the layers, which can be practical for imaging samples with a relatively small twist angle or when probing small sample regions. The quality of the reconstructed interlayer distance is studied as a function of the twist angle. At smaller twist angles, the reconstructed interlayer distance distribution is more precise and artefact free. At larger twist angles, artefacts due to the moiré structure appear in the reconstruction. A method for the reconstruction of the average interlayer distance is presented. As for resolution, the interlayer distance can be reconstructed by the holographic approach at an accuracy of 0.5 A, which is a few hundred times better than the intrinsic z-resolution of diffraction limited resolution, as expressed through the spread of the measured k-values. Moreover, we show that holographic CBED imaging can detect variations as small as 0.1 A in the interlayer distance, though the quantitative reconstruction of such variations suffers from large errors.
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Submitted 9 August, 2020;
originally announced August 2020.
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Long-range ballistic transport of Brown-Zak fermions in graphene superlattices
Authors:
Julien Barrier,
Piranavan Kumaravadivel,
Roshan Krishna-Kumar,
L. A. Ponomarenko,
Na Xin,
Matthew Holwill,
Ciaran Mullan,
Minsoo Kim,
R. V. Gorbachev,
M. D. Thompson,
J. R. Prance,
T. Taniguchi,
K. Watanabe,
I. V. Grigorieva,
K. S. Novoselov,
A. Mishchenko,
V. I. Fal'ko,
A. K. Geim,
A. I. Berdyugin
Abstract:
In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Br…
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In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10$^6$ cm$^2$V$^{-1}$s$^{-1}$ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are $4q$ times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1K. We also found negative bend resistance at $1/q$ fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field.
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Submitted 6 October, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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Higher-order exchange interactions in two-dimensional magnets
Authors:
Alexey Kartsev,
Mathias Augustin,
Richard F. L. Evans,
Kostya S. Novoselov,
Elton J. G. Santos
Abstract:
Magnetism in recently discovered van der Waals materials has opened new avenues in the study of fundamental spin interactions in truly two-dimensions. A paramount question is what effect higher-order interactions beyond bilinear Heisenberg exchange have on the magnetic properties of few-atom thick compounds. Here we demonstrate that biquadratic exchange interactions, which is the simplest and most…
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Magnetism in recently discovered van der Waals materials has opened new avenues in the study of fundamental spin interactions in truly two-dimensions. A paramount question is what effect higher-order interactions beyond bilinear Heisenberg exchange have on the magnetic properties of few-atom thick compounds. Here we demonstrate that biquadratic exchange interactions, which is the simplest and most natural form of non-Heisenberg coupling, assume a key role in the magnetic properties of layered magnets. Using a combination of nonperturbative analytical techniques, non-collinear first-principles methods and classical Monte Carlo calculations that incorporate higher-order exchange, we show that several quantities including magnetic anisotropies, spin-wave gaps and topological spin-excitations are intrinsically renormalized leading to further thermal stability of the layers. We develop a spin Hamiltonian that also contains antisymmetric exchanges (e.g. Dzyaloshinskii-Moriya interactions) to successfully rationalize numerous observations currently under debate, such as the non-Ising character of several compounds despite a strong magnetic anisotropy, peculiarities of the magnon spectrum of 2D magnets, and the discrepancy between measured and calculated Curie temperatures. Our results lay the foundation of a universal higher-order exchange theory for novel 2D magnetic design strategies.
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Submitted 8 June, 2020;
originally announced June 2020.
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Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics
Authors:
G. A. Ermolaev,
D. V. Grudinin,
Y. V. Stebunov,
K. V. Voronin,
V. G. Kravets,
J. Duan,
A. B. Mazitov,
G. I. Tselikov,
A. Bylinkin,
D. I. Yakubovsky,
S. M. Novikov,
D. G. Baranov,
A. Y. Nikitin,
I. A. Kruglov,
T. Shegai,
P. Alonso-González,
A. N. Grigorenko,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspir…
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Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.
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Submitted 11 January, 2021; v1 submitted 1 June, 2020;
originally announced June 2020.
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Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene
Authors:
Yanmeng Shi,
Shuigang Xu,
Mohammed M. Al Ezzi,
Nilanthy Balakrishnan,
Aitor Garcia-Ruiz,
Bonnie Tsim,
Ciaran Mullan,
Julien Barrier,
Na Xin,
Benjamin A. Piot,
Takashi Taniguchi,
Kenji Watanabe,
Alexandra Carvalho,
Artem Mishchenko,
A. K. Geim,
Vladimir I. Fal'ko,
Shaffique Adam,
Antonio Helio Castro Neto,
Kostya S. Novoselov
Abstract:
Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hy…
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Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.
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Submitted 26 April, 2020;
originally announced April 2020.
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Graphene-enabled adaptive infrared textiles
Authors:
M. Said Ergoktas,
Gokhan Bakan,
Pietro Steiner,
Cian Bartlam,
Yury Malevich,
Elif Ozden Yenigun,
Guanliang He,
Nazmul Karim,
Pietro Cataldi,
Mark Bissett,
Ian A. Kinloch,
Kostya S. Novoselov,
Coskun Kocabas
Abstract:
Interactive clothing requires sensing and display functionalities to be embedded on textiles. Despite the significant progress of electronic textiles, the integration of optoelectronic materials on fabrics still remains as an outstanding challenge. Here, using the electro-optical tunability of graphene, we report adaptive optical textiles with electrically controlled reflectivity and emissivity co…
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Interactive clothing requires sensing and display functionalities to be embedded on textiles. Despite the significant progress of electronic textiles, the integration of optoelectronic materials on fabrics still remains as an outstanding challenge. Here, using the electro-optical tunability of graphene, we report adaptive optical textiles with electrically controlled reflectivity and emissivity covering the infrared and near-infrared wavelengths. We achieve electro-optical modulation by reversible intercalation of ions into graphene layers laminated on fabrics. We demonstrate a new class of infrared textile devices including display, yarn and stretchable devices using natural and synthetic textiles. To show the promise of our approach, we fabricated an active device directly onto a t-shirt which enables long-wavelength infrared communication via modulation of the thermal radiation from the human body. The results presented here, provide complementary technologies which could leverage the ubiquitous use of functional textiles.
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Submitted 18 April, 2020;
originally announced April 2020.
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Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold
Authors:
Matej Velicky,
Alvaro Rodriguez,
Milan Bousa,
Andrey V. Krayev,
Martin Vondracek,
Jan Honolka,
Mahdi Ahmadi,
Gavin E. Donnelly,
Fumin Huang,
Hector D. Abruna,
Kostya S. Novoselov,
Otakar Frank
Abstract:
Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution…
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Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge do** engineering of MoS2.
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Submitted 15 April, 2020;
originally announced April 2020.
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Emergence of highly linearly polarized interlayer exciton emission in MoSe$_2$/WSe$_2$ heterobilayers with transfer-induced layer corrugation
Authors:
Evgeny M. Alexeev,
Nic Mullin,
Pablo Ares,
Harriet Nevison-Andrews,
Oleksandr V. Skrypka,
Tillmann Godde,
Aleksey Kozikov,
Lee Hague,
Yibo Wang,
Kostya S. Novoselov,
Laura Fumagalli,
Jamie K. Hobbs,
Alexander I. Tartakovskii
Abstract:
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional mate…
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The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering.
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Submitted 12 April, 2020;
originally announced April 2020.