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Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
Authors:
M. Zinkiewicz,
M. Grzeszczyk,
T. Kazimierczuk,
M. Bartos,
K. Nogajewski,
W. Pacuski,
K. Watanabe,
T. Taniguchi,
A. Wysmołek,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by swee** the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN.…
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Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by swee** the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), $i.e.$ MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, $i.e.$ in-plane E$'$ and out-of-plane A$'_1$, but the appearance of 1$^{st}$, 2$^{nd}$, and higher-order phonon modes is recognised. The intensity profiles of the A$'_1$ modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe$_2$ ML, the A$'_1$ mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, $i.e.$ bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.
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Submitted 16 August, 2023;
originally announced August 2023.
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Excitons and trions in WSSe monolayers
Authors:
Katarzyna Olkowska-Pucko,
Elena Blundo,
Natalia Zawadzka,
Salvatore Cianci,
Diana Vaclavkova,
Piotr Kapuściński,
Dipankar Jana,
Giorgio Pettinari,
Marco Felici,
Karol Nogajewski,
Miroslav Bartos,
Kenji Watanabe,
Takashi Taniguchi,
Clement Faugeras,
Marek Potemski,
Adam Babiński,
Antonio Polimeni,
Maciej R. Molas
Abstract:
The possibility of almost linear tuning of the band gap and of the electrical and optical properties in monolayers (MLs) of semiconducting transition metal dichalcogenide (S-TMD) alloys opens up the way to fabricate materials with on-demand characteristics. By making use of photoluminescence spectroscopy, we investigate optical properties of WSSe MLs with a S/Se ratio of 57/43 deposited on SiO…
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The possibility of almost linear tuning of the band gap and of the electrical and optical properties in monolayers (MLs) of semiconducting transition metal dichalcogenide (S-TMD) alloys opens up the way to fabricate materials with on-demand characteristics. By making use of photoluminescence spectroscopy, we investigate optical properties of WSSe MLs with a S/Se ratio of 57/43 deposited on SiO$_2$/Si substrate and encapsulated in hexagonal BN flakes. Similarly to the $"parent"$ WS$_2$ and WSe$_2$ MLs, we assign the WSSe MLs to the ML family with the dark ground exciton state. We find that, in addition to the neutral bright A exciton line, three observed emission lines are associated with negatively charged excitons. The application of in-plane and out-of-plane magnetic fields allows us to assign undeniably the bright and dark (spin- and momentum-forbidden) negative trions as well as the phonon replica of the dark spin-forbidden complex. Furthermore, the existence of the single photon emitters in the WSSe ML is also demonstrated, thus prompting the opportunity to enlarge the wavelength range for potential future quantum applications of S-TMDs.
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Submitted 29 November, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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Destructive photon echo formation in six-wave mixing signals of a MoSe$_2$ monolayer
Authors:
Thilo Hahn,
Diana Vaclavkova,
Miroslav Bartos,
Karol Nogajewski,
Marek Potemski,
Kenji Watanabe,
Takashi Taniguchi,
Paweł Machnikowski,
Tilmann Kuhn,
Jacek Kasprzak,
Daniel Wigger
Abstract:
Monolayers of transition metal dichalcogenides display a strong excitonic optical response. Additionally encapsulating the monolayer with hexagonal boron nitride allows to reach the limit of a purely homogeneously broadened exciton system. On such a MoSe$_{2}$-based system we perform ultrafast six-wave mixing spectroscopy and find a novel destructive photon echo effect. This process manifests as a…
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Monolayers of transition metal dichalcogenides display a strong excitonic optical response. Additionally encapsulating the monolayer with hexagonal boron nitride allows to reach the limit of a purely homogeneously broadened exciton system. On such a MoSe$_{2}$-based system we perform ultrafast six-wave mixing spectroscopy and find a novel destructive photon echo effect. This process manifests as a characteristic depression of the nonlinear signal dynamics when scanning the delay between the applied laser pulses. By theoretically describing the process within a local field model we reach an excellent agreement with the experiment. We develop an effective Bloch vector representation and thereby demonstrate that the destructive photon echo stems from a destructive interference of successive repetitions of the heterodyning experiment.
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Submitted 6 October, 2021;
originally announced October 2021.
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Local field effects in ultrafast light-matter interaction measured by pump-probe spectroscopy of monolayer MoSe$_{\boldsymbol 2}$
Authors:
Aleksander Rodek,
Thilo Hahn,
Jacek Kasprzak,
Tomasz Kazimierczuk,
Karol Nogajewski,
Karolina Połczyńska,
Kenji Watanabe,
Takashi Taniguchi,
Tilmann Kuhn,
Paweł Machnikowski,
Marek Potemski,
Daniel Wigger,
Piotr Kossacki
Abstract:
Using a novel approach to ultrafast resonant pump-probe spectroscopy we investigate the spectral shape and dynamics of absorption features related to the A exciton in an hBN/MoSe$_2$/hBN van der Waals heterostructure. While in a pure two-level system a pump-probe experiment measures the occupation or the polarization dynamics, depending on the time ordering of the pulse pair, in the transition met…
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Using a novel approach to ultrafast resonant pump-probe spectroscopy we investigate the spectral shape and dynamics of absorption features related to the A exciton in an hBN/MoSe$_2$/hBN van der Waals heterostructure. While in a pure two-level system a pump-probe experiment measures the occupation or the polarization dynamics, depending on the time ordering of the pulse pair, in the transition metal dichalcogenide (TMD) system both quantities get thoroughly mixed by strong exciton-exciton interaction. We find that for short positive delays the spectral lines experience pronounced changes in their shape and energy and they relax to the original situation on a picosecond time scale. For negative delays distinctive spectral oscillations appear indicating the first-time observation of perturbed free induction decay for a TMD system. The comparison between co-circular and cross-circular excitation schemes further allows us to investigate the rapid inter-valley scattering. By considering a three-level system as a minimal model including the local field effect, excitation induced dephasing and scattering between the excited states we explain all phenomena observed in the experiment with excellent consistency. Our handy model can be even further reduced to two levels in the case of a co-circular excitation, for which we derive analytic expressions to describe the detected signals. This allows us to trace back the spectral shapes and shifts to the impact of local field effect and excitation induced dephasing thus fully reproducing the complex behavior of the observed effects.
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Submitted 22 August, 2021; v1 submitted 9 March, 2021;
originally announced March 2021.
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Excitonic complexes in $n$-doped WS$_2$ monolayer
Authors:
M. Zinkiewicz,
T. Woźniak,
T. Kazimierczuk,
P. Kapuściński,
K. Oreszczuk,
M. Grzeszczyk,
M. Bartos,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bri…
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We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically-inactive complexes. The semi-dark trions and negative biexcitons are distinguished. Based on their experimentally extracted and theoretically calculated $g$-factors, we identify three distinct families of emissions due to exciton complexes in WS$_2$: bright, intravalley and intervalley dark. The $g$-factors of the spin-split subbands in both the conduction and valence bands are also determined.
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Submitted 21 December, 2020;
originally announced December 2020.
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Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
Authors:
M. Osiekowicz,
D. Staszczuk,
K. Olkowska-Pucko,
Ł. Kipczak,
M. Grzeszczyk,
M. Zinkiewicz,
K. Nogajewski,
Z. R. Kudrynskyi,
Z. D. Kovalyuk,
A. Patané,
A. Babiński,
M. R. Molas
Abstract:
The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under th…
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The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $γ$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 K and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the \mbox{so-called} B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone
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Submitted 24 October, 2020;
originally announced October 2020.
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Valley pseudospin relaxation of charged excitons in monolayer MoTe$_2$
Authors:
Tomasz Smoleński,
Tomasz Kazimierczuk,
Mateusz Goryca,
Karol Nogajewski,
Marek Potemski,
Piotr Kossacki
Abstract:
Zeeman effect induced by the magnetic field introduces a splitting between the two valleys at K$^+$ and K$^-$ points of the Brillouin zone in monolayer semiconducting transition metal dichalcogenides. In consequence, the photoluminescence signal exhibits a field dependent degree of circular polarization. We present a comprehensive study of this effect in the case of a trion in monolayer MoTe$_2$,…
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Zeeman effect induced by the magnetic field introduces a splitting between the two valleys at K$^+$ and K$^-$ points of the Brillouin zone in monolayer semiconducting transition metal dichalcogenides. In consequence, the photoluminescence signal exhibits a field dependent degree of circular polarization. We present a comprehensive study of this effect in the case of a trion in monolayer MoTe$_2$, showing that although time integrated data allows us to deduce a g-factor of the trion state, such an analysis cannot be substantiated by the timescales revealed in the time-resolved experiments.
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Submitted 28 May, 2020;
originally announced May 2020.
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Neutral and charged dark excitons in monolayer WS$_2$
Authors:
M. Zinkiewicz,
A. O. Slobodeniuk,
T. Kazimierczuk,
P. Kapuściński,
K. Oreszczuk,
M. Grzeszczyk,
M. Bartos,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
M. Potemski,
A. Babiński,
M. R. Molas
Abstract:
Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange…
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Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange interaction coupled neutral dark and grey excitons through their polarization properties, while an analogous effect is not observed for dark trions. Applying the magnetic field in both perpendicular and parallel configurations with respect to the monolayer plane, we determine the g-factor of dark trions to be $g\sim$-8.6. Their decay rate is close to 0.5 ns, more than 2 orders of magnitude longer than that of bright excitons.
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Submitted 28 May, 2020;
originally announced May 2020.
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Valley polarization of singlet and triplet trions in WS$_2$ monolayer in magnetic fields
Authors:
P. Kapuściński,
D. Vaclavkova,
M. Grzeszczyk,
A. O. Slobodeniuk,
K. Nogajewski,
M. Bartos,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
A. Babiński,
M. Potemski,
M. R. Molas
Abstract:
The spectral signatures associated with different negatively charged exciton complexes (trions) in a WS$_2$ monolayer encapsulated in hBN, are analyzed from low temperature and polarization resolved reflectance contrast (RC) and photoluminescence (PL) experiments, with an applied magnetic field. Based on results obtained from the RC experiment, we show that the valley Zeeman effect affects the opt…
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The spectral signatures associated with different negatively charged exciton complexes (trions) in a WS$_2$ monolayer encapsulated in hBN, are analyzed from low temperature and polarization resolved reflectance contrast (RC) and photoluminescence (PL) experiments, with an applied magnetic field. Based on results obtained from the RC experiment, we show that the valley Zeeman effect affects the optical response of both the singlet and the triplet trion species through the evolution of their energy and of their relative intensity, when applying an external magnetic field. Our analysis allows us to estimate a free electron concentration of $\sim 1.3 \cdot 10^{11}$ cm$^{-2}$. The observed evolutions based on PL experiments on the same sample are different and can hardly be understood within the same simple frame highlighting the complexity of relaxation processes involved in the PL response.
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Submitted 10 May, 2020; v1 submitted 7 May, 2020;
originally announced May 2020.
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Dynamics of resonantly excited excitons in MoSe$_2$ and WS$_2$ single-layers monitored with four-wave mixing
Authors:
Tomasz Jakubczyk,
Miroslav Bartos,
Karol Nogajewski,
Lorenzo Scarpelli,
Wolfgang Langbein,
Marek Potemski,
Jacek Kasprzak
Abstract:
We investigate dynamics of resonantly excited excitons in single-layers of MoSe$_2$ and WS$_2$ down to 4.5 K. To this end, we measure the delay dependence of the heterodyne four-wave mixing (FWM) amplitude induced by three, short laser pulses. This signal depends not only on the population of optically active excitons, which affects the absorption of the probe, but also on the population of optica…
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We investigate dynamics of resonantly excited excitons in single-layers of MoSe$_2$ and WS$_2$ down to 4.5 K. To this end, we measure the delay dependence of the heterodyne four-wave mixing (FWM) amplitude induced by three, short laser pulses. This signal depends not only on the population of optically active excitons, which affects the absorption of the probe, but also on the population of optically inactive states, by interaction-induced energy shift, influencing the refractive index experienced by the probe. As such, it offers insight into density dynamics of excitons which do not directly couple to photons. Reproducing the coherent signal detected in amplitude and phase, the FWM delay dependence is modeled by a coherent superposition of several exponential decay components, with characteristic time constants from 0.1 picosecond up to 1 nanosecond. With increasing excitation intensity and/or temperature, we observe strong interference effects in the FWM field amplitude, resulting in progressively more complex and nonintuitive signal dynamics. We attribute this behaviour to increasingly populated exciton dark states, which change the FWM field phase by the relative effect on absorption and refractive index. We observe that exciton recombination occurs on a significantly longer timescale in WS$_2$ with respect to MoSe$_2$, which is attributed to the dark character of exciton ground state in the former and the bright in the latter.
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Submitted 5 February, 2020;
originally announced February 2020.
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Coherent dynamics and map** of excitons in single-layer MoSe$_2$ and WSe$_2$ at the homogeneous limit
Authors:
Caroline Boule,
Diana Vaclavkova,
Miroslav Bartos,
Karol Nogajewski,
Lukas Zdrazil,
Takashi Taniguchi,
Kenji Watanabe,
Marek Potemski,
Jacek Kasprzak
Abstract:
We perform coherent nonlinear spectroscopy of excitons in single-layers of MoSe$_2$ and WSe$_2$ encapsulated between thin films of hexagonal boron nitride. Employing four-wave mixing microscopy we identify virtually disorder free areas, generating exciton optical response at the homogeneous limit. Focussing on such areas, we measure exciton homogeneous broadening as a function of environmental fac…
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We perform coherent nonlinear spectroscopy of excitons in single-layers of MoSe$_2$ and WSe$_2$ encapsulated between thin films of hexagonal boron nitride. Employing four-wave mixing microscopy we identify virtually disorder free areas, generating exciton optical response at the homogeneous limit. Focussing on such areas, we measure exciton homogeneous broadening as a function of environmental factors, namely temperature and exciton density. Exploiting FWM imaging, we find that at such locations, nonlinear absorption of the exciton excited states and their coherent couplings can be observed. Using the WSe$_2$ heterostructure, we infer coherence and density dynamics of the exciton 2S state. Owing to its increased radiative lifetime, at low temperatures, the dephasing of the 2S state is longer than of the 1S transition. While scanning various heterostructures across tens of micrometers, we conclude that the disorder, principally induced by strain variations, remain to be present creating spatially varying inhomogeneous broadening.
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Submitted 19 February, 2020; v1 submitted 4 February, 2020;
originally announced February 2020.
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Temperature dependence of photoluminescence lifetime of atomically thin WSe2 layer
Authors:
Aleksandra Łopion,
Mateusz Goryca,
Tomasz Smoleński,
Kacper Oreszczuk,
Karol Nogajewski,
Maciej R. Molas,
Marek Potemski,
Piotr Kossacki
Abstract:
At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing temperature. In order to understand the mechanism behind this phenomenon, we carried out a time-resolved experiment, which revealed a similar trend in the photoluminescenc…
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At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing temperature. In order to understand the mechanism behind this phenomenon, we carried out a time-resolved experiment, which revealed a similar trend in the photoluminescence decay time. Our results identify the opening of additional nonradiative relaxation channels as a primary cause of the observed temperature quenching of the localized excitons' photoluminescence.
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Submitted 5 December, 2019;
originally announced December 2019.
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The effect of metallic substrates on the optical properties of monolayer MoSe$_{2}$
Authors:
M. Grzeszczyk,
M. R. Molas,
K. Nogajewski,
M. Bartoš,
A. Bogucki,
C. Faugeras,
P. Kossacki,
A. Babiński,
M. Potemski
Abstract:
Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflect…
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Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the effect of several metallic substrates on the optical properties of MoSe$_2$ monolayer (ML) deposited on top of them with photoluminescence and reflectance contrast techniques. The optical spectra of MoSe$_{2}$ MLs deposited on Pt, Au, Mo and Zr have distinctive metal-related lineshapes. In particular, a substantial variation in the intensity ratio and the energy separation between a negative trion and a neutral exciton is observed. It is shown that using metals as substrates affects the do** of S-TMD MLs. The explanation of the effect involves the Schottky barrier formation at the interface between the MoSe$_{2}$ ML and the metallic substrates. The alignment of energy levels at the metal/semiconductor junction allows for the transfer of charge carriers between them. We argue that a proper selection of metallic substrates can be a way to inject appropriate types of carriers into the respective bands of S-TMDs.
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Submitted 22 October, 2019;
originally announced October 2019.
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Breathing modes in few-layer MoTe$_2$ activated by h-BN encapsulation
Authors:
M. Grzeszczyk,
M. R. Molas,
M. Bartoš,
K. Nogajewski,
M. Potemski,
A. Babiński
Abstract:
The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect also vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer…
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The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect also vibration properties of TMDs due to an atomically flat surface of h-BN layers. In order to study its effect on interlayer interactions in few-layer TMDs, we investigate low-energy Raman scattering spectra of bi- and trilayer MoTe$_2$. Surprisingly, three breathing modes are observed in the Raman spectra of the structures deposited on or encapsulated in h-BN as compared to a single breathing mode for the flakes deposited on a SiO$_2$/Si substrate. The shear mode is not affected by changing the MoTe$_2$ environment. The emerged structure of breathing modes is ascribed to the apparent interaction between the MoTe$_2$ layer and the bottom h-BN flake. The structure becomes visible due to a high-quality surface of the former flake. Consequently, the observed triple structure of breathing modes originates from the combination modes due to interlayer and layer-substrate interactions. Our results confirm that the h-BN encapsulation affects substantially vibration properties of layered materials.
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Submitted 5 May, 2020; v1 submitted 27 August, 2019;
originally announced August 2019.
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Exciton-polaritons in multilayer WSe$_2$ in a planar microcavity
Authors:
M. Król,
K. Rechcińska,
K. Nogajewski,
M. Grzeszczyk,
K. Łempicka,
R. Mirek,
S. Piotrowska,
K. Watanabe,
T. Taniguchi,
M. R. Molas,
M. Potemski,
J. Szczytko,
B. Piętka
Abstract:
Due to high binding energy and oscillator strength, excitons in thin flakes of transition metal dichalcogenides constitute a perfect foundation for realizing a strongly coupled light-matter system. In this paper we investigate mono- and few-layer WSe$_2$ flakes encapsulated in hexagonal boron nitride and incorporated into a planar dielectric cavity. We use an open cavity design which provides tuna…
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Due to high binding energy and oscillator strength, excitons in thin flakes of transition metal dichalcogenides constitute a perfect foundation for realizing a strongly coupled light-matter system. In this paper we investigate mono- and few-layer WSe$_2$ flakes encapsulated in hexagonal boron nitride and incorporated into a planar dielectric cavity. We use an open cavity design which provides tunability of the cavity mode energy by as much as 150 meV. We observe a strong coupling regime between the cavity photons and the neutral excitons in direct-bandgap monolayer WSe$_2$, as well as in few-layer WSe$_2$ flakes exhibiting indirect bandgap. We discuss the dependence of the exciton's oscillator strength and resonance linewidth on the number of layers and predict the exciton-photon coupling strength.
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Submitted 29 September, 2019; v1 submitted 14 August, 2019;
originally announced August 2019.
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Energy spectrum of two-dimensional excitons in a non-uniform dielectric medium
Authors:
M. R. Molas,
A. O. Slobodeniuk,
K. Nogajewski,
M. Bartos,
Ł. Bala,
A. Babiński,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
M. Potemski
Abstract:
We demonstrate that, in monolayers (MLs) of semiconducting transition metal dichalcogenides, the $s$-type Rydberg series of excitonic states follows a simple energy ladder: $ε_n=-Ry^*/(n+δ)^2$, $n$=1,2,\ldots, in which $Ry^*$ is very close to the Rydberg energy scaled by the dielectric constant of the medium surrounding the ML and by the reduced effective electron-hole mass, whereas the ML polariz…
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We demonstrate that, in monolayers (MLs) of semiconducting transition metal dichalcogenides, the $s$-type Rydberg series of excitonic states follows a simple energy ladder: $ε_n=-Ry^*/(n+δ)^2$, $n$=1,2,\ldots, in which $Ry^*$ is very close to the Rydberg energy scaled by the dielectric constant of the medium surrounding the ML and by the reduced effective electron-hole mass, whereas the ML polarizability is only accounted for by $δ$. This is justified by the analysis of experimental data on excitonic resonances, as extracted from magneto-optical measurements of a high-quality WSe$_2$ ML encapsulated in hexagonal boron nitride (hBN), and well reproduced with an analytically solvable Schrödinger equation when approximating the electron-hole potential in the form of a modified Kratzer potential. Applying our convention to other, MoSe$_2$, WS$_2$, MoS$_2$ MLs encapsulated in hBN, we estimate an apparent magnitude of $δ$ for each of the studied structures. Intriguingly, $δ$ is found to be close to zero for WSe$_2$ as well as for MoS$_2$ monolayers, what implies that the energy ladder of excitonic states in these two-dimensional structures resembles that of Rydberg states of a three-dimensional hydrogen atom.
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Submitted 7 July, 2019; v1 submitted 11 February, 2019;
originally announced February 2019.
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Probing and manipulating valley coherence of dark excitons in monolayer WSe$_2$
Authors:
M. R. Molas,
A. O. Slobodeniuk,
T. Kazimierczuk,
K. Nogajewski,
M. Bartos,
P. Kapuściński,
K. Oreszczuk,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
P. Kossacki,
D. M. Basko,
M. Potemski
Abstract:
Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-split subbands in the valence and conduction bands makes the lowest-lying excitons in WX$_2$ (X~being S…
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Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-split subbands in the valence and conduction bands makes the lowest-lying excitons in WX$_2$ (X~being S or Se) spin-forbidden and optically dark. With polarization-resolved photoluminescence experiments performed on a WSe$_2$ monolayer encapsulated in a hexagonal boron nitride, we show how the intrinsic exchange interaction in combination with the applied in-plane and/or out-of-plane magnetic fields enables one to probe and manipulate the valley degree of freedom of the dark excitons.
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Submitted 10 June, 2019; v1 submitted 14 January, 2019;
originally announced January 2019.
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Zeeman spectroscopy of excitons and hybridization of electronic states in few-layer WSe$_2$, MoSe$_2$ and MoTe$_2$
Authors:
Ashish Arora,
Maciej Koperski,
Artur Slobodeniuk,
Karol Nogajewski,
Robert Schmidt,
Robert Schneider,
Maciej R. Molas,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
Marek Potemski
Abstract:
Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate the energetic degeneracy of the $\mathrm{K}^+$ and $\mathrm{K}^-$ valleys in few-layer TMDCs. We perform high-field magneto-reflectance spectroscopy on WSe$_2$, M…
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Monolayers and multilayers of semiconducting transition metal dichalcogenides (TMDCs) offer an ideal platform to explore valley-selective physics with promising applications in valleytronics and information processing. Here we manipulate the energetic degeneracy of the $\mathrm{K}^+$ and $\mathrm{K}^-$ valleys in few-layer TMDCs. We perform high-field magneto-reflectance spectroscopy on WSe$_2$, MoSe$_2$, and MoTe$_2$ crystals of thickness from monolayer to the bulk limit under magnetic fields up to 30 T applied perpendicular to the sample plane. Because of a strong spin-layer locking, the ground state A excitons exhibit a monolayer-like valley Zeeman splitting with a negative $g$-factor, whose magnitude increases monotonically when thinning the crystal down from bulk to a monolayer. Using the $\mathbf{k\cdot p}$ calculation, we demonstrate that the observed evolution of $g$-factors for different materials is well accounted for by hybridization of electronic states in the $\mathrm{K}^+$ and $\mathrm{K}^-$ valleys. The mixing of the valence and conduction band states induced by the interlayer interaction decreases the $g$-factor magnitude with an increasing layer number. The effect is the largest for MoTe$_2$, followed by MoSe$_2$, and smallest for WSe$_2$.
Keywords: MoSe$_2$, WSe$_2$, MoTe$_2$, valley Zeeman splitting, transition metal dichalcogenides, excitons, magneto optics.
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Submitted 19 November, 2018; v1 submitted 9 November, 2018;
originally announced November 2018.
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Dimensional crossover of acoustic phonon lifetime in $2H$-MoSe$_2$
Authors:
P. Soubelet,
A. A. Reynoso,
A. Fainstein,
K. Nogajewski,
M. Potemski,
C. Faugeras,
A. E. Bruchhausen
Abstract:
A time-resolved observation of coherent interlayer longitudinal acoustic phonons in 2$H$-MoSe$_2$ is reported. A femtosecond pump-probe technique is used to investigate the evolution of the energy loss of these vibrational modes in a wide selection of MoSe$_2$ flakes with different thicknesses ranging from bilayer up to the bulk limit. By directly analysing the temporal decay of the modes, we can…
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A time-resolved observation of coherent interlayer longitudinal acoustic phonons in 2$H$-MoSe$_2$ is reported. A femtosecond pump-probe technique is used to investigate the evolution of the energy loss of these vibrational modes in a wide selection of MoSe$_2$ flakes with different thicknesses ranging from bilayer up to the bulk limit. By directly analysing the temporal decay of the modes, we can clearly distinguish an abrupt crossover related to the acoustic mean free path of the phonons in a layered system, and the constraints imposed to the acoustic decay channels when reducing the dimensionality. Loses intrinsic to the low dimensionality of single or few layer materials impose critical limitations for their use in optomechanical and optoelectronic devices.
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Submitted 11 October, 2018; v1 submitted 10 October, 2018;
originally announced October 2018.
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Fine structure of $\mathrm{K}$-excitons in multilayers of transition metal dichalcogenides
Authors:
A. O. Slobodeniuk,
Ł. Bala,
M. Koperski,
M. R. Molas,
P. Kossacki,
K. Nogajewski,
M. Bartos,
K. Watanabe,
T. Taniguchi,
C. Faugeras,
M. Potemski
Abstract:
Reflectance and magneto-reflectance experiments together with theoretical modelling based on the $\mathbf{k\cdot p}$ approach have been employed to study the evolution of direct bandgap excitons in MoS$_2$ layers with a thickness ranging from mono- to trilayer. The extra excitonic resonances observed in MoS$_2$ multilayers emerge as a result of the hybridization of Bloch states of each sub-layer d…
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Reflectance and magneto-reflectance experiments together with theoretical modelling based on the $\mathbf{k\cdot p}$ approach have been employed to study the evolution of direct bandgap excitons in MoS$_2$ layers with a thickness ranging from mono- to trilayer. The extra excitonic resonances observed in MoS$_2$ multilayers emerge as a result of the hybridization of Bloch states of each sub-layer due to the interlayer coupling. The properties of such excitons in bi- and trilayers are classified by the symmetry of corresponding crystals. The inter- and intralayer character of the reported excitonic resonances is fingerprinted with the magneto-optical measurements: the excitonic $g$-factors of opposite sign and of different amplitude are revealed for these two types of resonances. The parameters describing the strength of the spin-orbit interaction are estimated for bi- and trilayer MoS$_2$.
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Submitted 1 October, 2018;
originally announced October 2018.
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Valley polarization of exciton-polaritons in monolayer WSe2 in a tunable microcavity
Authors:
M. Król,
K. Lekenta,
R. Mirek,
K. Łempicka,
D. Stephan,
K. Nogajewski,
M. R. Molas,
A. Babiński,
M. Potemski,
J. Szczytko,
B. Piętka
Abstract:
Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling regime between excitons in monolayer WSe2 and photons confined in an open, voltage-tunable dielectric microcavity. The tunability of our system allows us to exte…
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Monolayer transition metal dichalcogenides, known for exhibiting strong excitonic resonances, constitute a very interesting and versatile platform for investigation of light-matter interactions. In this work we report on a strong coupling regime between excitons in monolayer WSe2 and photons confined in an open, voltage-tunable dielectric microcavity. The tunability of our system allows us to extend the exciton-polariton state over a wide energy range and, in particular, to bring the excitonic component of the lower polariton mode into resonance with other excitonic transitions in monolayer WSe2. With selective excitation of spin-polarized exciton-polaritons we demonstrate the valley polarization when the polaritons from the lower branch come into resonance with a bright trion state in monolayer WSe2 and valley depolarization when they are in resonance with a dark trion state.
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Submitted 25 September, 2018;
originally announced September 2018.
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Tuning carrier concentration in a superacid treated MoS$_2$ monolayer
Authors:
Maciej R. Molas,
Katarzyna Gołasa,
Łukasz Bala,
Karol Nogajewski,
Miroslav Bartos,
Marek Potemski,
Adam Babiński
Abstract:
The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in th…
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The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in the redshift of the neutral exciton emission/absorption associated with both the A and B excitonic resonances. Based on this evolution, a trion complex related to the B exciton in monolayer MoS$_2$ is unambiguously identified. A defect-related emission observed at low temperatures also disappears from the spectrum as a result of the treatment. Our observations are attributed to effective passivation of defects on the MoS$_{2}$ monolayer surface. The passivation reduces the carrier density, which in turn affects the out-of-plane electric field in the sample. The observed tuning of the carrier concentration strongly influences also the Raman scattering in the MoS$_2$ monolayer. An enhancement of Raman scattering at resonant excitation in the vicinity of the A neutral exciton is clearly seen for both the out-of-plane A$_1^{'}$ and in-plane E$^{'}$ modes. On the contrary, when the excitation is in resonance with a corresponding trion, the Raman scattering features become hardly visible. These results confirm the role of the excitonic charge state plays in the resonance effect of the excitation energy on the Raman scattering in transition metal dichalcogenides.
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Submitted 30 November, 2018; v1 submitted 22 September, 2018;
originally announced September 2018.
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Raman scattering from the bulk inactive out-of-plane B$^{1}_{2\text{g}}$ mode in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. R. Molas,
K. Nogajewski,
M. Zinkiewicz,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energ…
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Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energy components is recorded at low temperature for 1.91 eV and 1.96 eV laser excitation. We discuss the attribution of the peaks to the inner modes of the respective Raman-active vibrations. The temperature evolution of their intensity strongly suggests a resonant character of the employed excitation, which leads to the mode enhancement at low temperature. The resonance of the laser light with the singularity of the electronic density of states at the $M$ point of the Brillouin zone in MoTe$_{2}$ is proposed to be responsible for the observed effects.
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Submitted 7 August, 2018;
originally announced August 2018.
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Orbital, spin and valley contributions to Zeeman splitting of excitonic resonances in MoSe$_2$, WSe$_2$ and WS$_2$ monolayers
Authors:
M. Koperski,
M. R. Molas,
A. Arora,
K. Nogajewski,
M. Bartos,
J. Wyzula,
D. Vaclavkova,
P. Kossacki,
M. Potemski
Abstract:
We present a comprehensive optical study of the excitonic Zeeman effects in transition metal dichalcogenide monolayers, which are discussed comparatively for selected materials: MoSe$_2$, WSe$_2$ and WS$_2$. We introduce a simple semi-phenomenological description of the magnetic field evolution of individual electronic states in fundamental sub-bands by considering three additive components: valle…
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We present a comprehensive optical study of the excitonic Zeeman effects in transition metal dichalcogenide monolayers, which are discussed comparatively for selected materials: MoSe$_2$, WSe$_2$ and WS$_2$. We introduce a simple semi-phenomenological description of the magnetic field evolution of individual electronic states in fundamental sub-bands by considering three additive components: valley, spin and orbital terms. We corroborate the validity of the proposed description by inspecting the Zeeman-like splitting of neutral and charged excitonic resonances in absorption-type spectra. The values of all three terms are estimated based on the experimental data, demonstrating the significance of the valley term for a consistent description of magnetic field evolution of optical resonances, particularly those corresponding to charged states. The established model is further exploited for discussion of magneto-luminescence data. We propose an interpretation of the observed large g-factor values of low energy emission lines, due to so-called bound/localized excitons in tungsten based compounds, based on the brightening mechanisms of dark excitonic states.
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Submitted 1 March, 2018;
originally announced March 2018.
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Singlet and triplet trions in WS$_2$ monolayer encapsulated in hexagonal boron nitride
Authors:
D. Vaclavkova,
J. Wyzula,
K. Nogajewski,
M. Bartos,
A. O. Slobodeniuk,
C. Faugeras,
M. Potemski,
M. R. Molas
Abstract:
Embedding a WS$_2$ monolayer in flakes of hexagonal boron nitride allowed us to resolve and study the photoluminescence response due to both singlet and triplet states of negatively charged excitons (trions) in this atomically thin semiconductor. The energy separation between the singlet and triplet states has been found to be relatively small reflecting rather weak effects of the electron-electro…
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Embedding a WS$_2$ monolayer in flakes of hexagonal boron nitride allowed us to resolve and study the photoluminescence response due to both singlet and triplet states of negatively charged excitons (trions) in this atomically thin semiconductor. The energy separation between the singlet and triplet states has been found to be relatively small reflecting rather weak effects of the electron-electron exchange interaction for the trion triplet in a WS$_2$ monolayer, which involves two electrons with the same spin but from different valleys. Polarization-resolved experiments demonstrate that the helicity of the excitation light is better preserved in the emission spectrum of the triplet trion than in that of the singlet trion. Finally, the singlet (intravalley) trions are found to be observable even at ambient conditions whereas the emission due to the triplet (intervalley) trions is only efficient at low temperatures.
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Submitted 15 May, 2018; v1 submitted 15 February, 2018;
originally announced February 2018.
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Impact of environment on dynamics of exciton complexes in a WS$_2$ monolayer
Authors:
T. Jakubczyk,
K. Nogajewski,
M. R. Molas,
M. Bartos,
W. Langbein,
M. Potemski,
J. Kasprzak
Abstract:
Scientific curiosity to uncover original optical properties and functionalities of atomically thin semiconductors, stemming from unusual Coulomb interactions in the two-dimensional geometry and multi-valley band structure, drives the research on monolayers of transition metal dichalcogenides (TMDs). While recent works ascertained the exotic energetic schemes of exciton complexes in TMDs, we here e…
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Scientific curiosity to uncover original optical properties and functionalities of atomically thin semiconductors, stemming from unusual Coulomb interactions in the two-dimensional geometry and multi-valley band structure, drives the research on monolayers of transition metal dichalcogenides (TMDs). While recent works ascertained the exotic energetic schemes of exciton complexes in TMDs, we here employ four-wave mixing microscopy to indicate that their subpicosecond dynamics is determined by the surrounding disorder. Focusing on a monolayer WS$_2$, we observe that exciton coherence is lost primarily due to interaction with phonons and relaxation processes towards optically dark excitonic states. Notably, when temperature is low and disorder weak excitons large coherence volume results in huge oscillator strength, allowing to reach the regime of radiatively limited dephasing and we observe long valley coherence. We thus elucidate the crucial role of exciton environment in the TMDs on its dynamics and show that revealed mechanisms are ubiquitous within that family.
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Submitted 11 October, 2017; v1 submitted 8 September, 2017;
originally announced September 2017.
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Single Photon Emitters in Boron Nitride: More Than a Supplementary Material
Authors:
Maciej Koperski,
Karol Nogajewski,
Marek Potemski
Abstract:
We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow em…
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We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.
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Submitted 11 August, 2017;
originally announced August 2017.
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Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene
Authors:
Hugo Henck,
Jose Avila,
Zeineb Ben Aziza,
Debora Pierucci,
Jacopo Baima,
Betül Pamuk,
Julien Chaste,
Daniel Utt,
Miroslav Bartos,
Karol Nogajewski,
Benjamin A. Piot,
Milan Orlita,
Marek Potemski,
Matteo Calandra,
Maria C. Asensio,
Francesco Mauri,
Clément Faugeras,
Abdelkarim Ouerghi
Abstract:
The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or ma…
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The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or magnetic orders. Clean experimental band structure measurements of ABC stacked specimens are missing because the samples are usually too small in size. Here, we directly image the band structure of large multilayer graphene flake containing approximately 14 consecutive ABC layers. Angle-resolved photoemission spectroscopy experiments reveal the flat electronic bands near the K point extends by 0.13 Å-1 at the Fermi level at liquid nitrogen temperature. First-principle calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV.
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Submitted 25 June, 2018; v1 submitted 10 August, 2017;
originally announced August 2017.
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Optical response of monolayer, few-layer and bulk tungsten disulfide
Authors:
Maciej R. Molas,
Karol Nogajewski,
Artur O. Slobodeniuk,
Johannes Binder,
Miroslav Bartos,
Marek Potemski
Abstract:
We present a comprehensive optical study of thin films of tungsten disulfide (WS$_2$) with layer thicknesses ranging from mono- to octalayer and in the bulk limit. It is shown that the optical band-gap absorption of monolayer WS$_2$ is governed by competing resonances arising from one neutral and two distinct negatively charged excitons whose contributions to the overall absorption of light vary a…
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We present a comprehensive optical study of thin films of tungsten disulfide (WS$_2$) with layer thicknesses ranging from mono- to octalayer and in the bulk limit. It is shown that the optical band-gap absorption of monolayer WS$_2$ is governed by competing resonances arising from one neutral and two distinct negatively charged excitons whose contributions to the overall absorption of light vary as a function of temperature and carrier concentration. The photoluminescence response of monolayer WS$_2$ is found to be largely dominated by disorder/impurity- and/or phonon-assisted recombination processes. The indirect band-gap luminescence in multilayer WS$_2$ turns out to be a phonon-mediated process whose energy evolution with the number of layers surprisingly follows a simple model of a two-dimensional confinement. The energy position of the direct band-gap response (A and B resonances) is only weakly dependent on the layer thickness, which underlines an approximate compensation of the effect of the reduction of the exciton binding energy by the shrinkage of the apparent band gap. The A-exciton absorption-type spectra in multilayer WS$_2$ display a non-trivial fine structure which results from the specific hybridization of the electronic states in the vicinity of the K-point of the Brillouin zone. The effects of temperature on the absorption-like and photoluminescence spectra of various WS$_2$ layers are also quantified.
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Submitted 28 June, 2017;
originally announced June 2017.
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Raman scattering excitation spectroscopy in monolayer WS$_2$
Authors:
Maciej R. Molas,
Karol Nogajewski,
Marek Potemski,
Adam Babinski
Abstract:
Resonant Raman scattering is investigated in monolayer WS$_2$ at low temperature with the aid of an unconventional spectroscopy technique, $i.e.$, Raman scattering excitation (RSE). The RSE spectrum is made up by swee** the excitation energy, when the detection energy is fixed in resonance with excitonic transitions related to neutral and/or charged excitons. We demonstrate that the shape of the…
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Resonant Raman scattering is investigated in monolayer WS$_2$ at low temperature with the aid of an unconventional spectroscopy technique, $i.e.$, Raman scattering excitation (RSE). The RSE spectrum is made up by swee** the excitation energy, when the detection energy is fixed in resonance with excitonic transitions related to neutral and/or charged excitons. We demonstrate that the shape of the RSE spectrum strongly depends on a selected detection energy. The out-going resonance with the neutral exciton leads to an extremely rich RSE spectrum displaying several Raman scattering features not reported so far, while no clear effect on the associated background photoluminescence is observed. Instead, a strong enhancement of the emission due to the negatively charged exciton is apparent when the out-going photons resonate with this exciton. Presented results show that the RSE spectroscopy can be a useful technique to study electron-phonon interactions in thin layers of transition metal dichalcogenides.
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Submitted 9 May, 2017; v1 submitted 27 March, 2017;
originally announced March 2017.
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Magnetic field induced polarization enhancement in monolayers of tungsten dichalcogenides: Effects of temperature
Authors:
Tomasz Smoleński,
Tomasz Kazimierczuk,
Mateusz Goryca,
Maciej R. Molas,
Karol Nogajewski,
Clement Faugeras,
Marek Potemski,
Piotr Kossacki
Abstract:
Optical orientation of localized/bound excitons is shown to be effectively enhanced by the application of magnetic fields as low as 20 mT in monolayer WS$_2$. At low temperatures, the evolution of the polarization degree of different emission lines of monolayer WS$_2$ with increasing magnetic fields is analyzed and compared to similar results obtained on a WSe$_2$ monolayer. We study the temperatu…
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Optical orientation of localized/bound excitons is shown to be effectively enhanced by the application of magnetic fields as low as 20 mT in monolayer WS$_2$. At low temperatures, the evolution of the polarization degree of different emission lines of monolayer WS$_2$ with increasing magnetic fields is analyzed and compared to similar results obtained on a WSe$_2$ monolayer. We study the temperature dependence of this effect up to $T=60$ K for both materials, focusing on the dynamics of the valley pseudospin relaxation. A rate equation model is used to analyze our data and from the analysis of the width of the polarization deep in magnetic field we conclude that the competition between the dark exciton pseudospin relaxation and the decay of the dark exciton population into the localized states are rather different in these two materials which are representative of the two extreme cases for the ratio of relaxation rate and depolarization rate.
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Submitted 3 March, 2017;
originally announced March 2017.
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Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
Authors:
J. Binder,
F. Withers,
M. R. Molas,
C. Faugeras,
K. Nogajewski,
K. Watanabe,
T. Taniguchi,
A. Kozikov,
A. K. Geim,
K. S. Novoselov,
M. Potemski
Abstract:
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the…
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We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B-periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.
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Submitted 27 February, 2017;
originally announced February 2017.
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Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
Authors:
M. Koperski,
M. R. Molas,
A. Arora,
K. Nogajewski,
A. O. Slobodeniuk,
C. Faugeras,
M. Potemski
Abstract:
Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical tran…
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Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pum** experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation.
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Submitted 18 December, 2016;
originally announced December 2016.
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Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides
Authors:
M. R. Molas,
C. Faugeras,
A. O. Slobodeniuk,
K. Nogajewski,
M. Bartos,
D. M. Basko,
M. Potemski
Abstract:
We present low temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field $B$ applied to monolayers of different semiconducting transition metal dichalcogenides. For both WSe$_2$ and WS$_2$ monolayers, the dark exciton emission is observed at $\sim$50 meV below the bright exciton peak and displays a characteristic doublet stru…
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We present low temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field $B$ applied to monolayers of different semiconducting transition metal dichalcogenides. For both WSe$_2$ and WS$_2$ monolayers, the dark exciton emission is observed at $\sim$50 meV below the bright exciton peak and displays a characteristic doublet structure which intensity is growing with $B^2$, while no magnetic field induced emission peaks appear for MoSe$_2$ monolayer. Our experiments also show that the MoS$_2$ monolayer has a dark exciton ground state with a dark-bright exciton splitting energy of $\sim$100 meV.
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Submitted 8 December, 2016;
originally announced December 2016.
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Resonant quenching of Raman scattering due to out-of-plane A$_{1g}$/A'$_1$ modes in few-layer MoTe$_2$
Authors:
K. Gołasa,
M. Grzeszczyk,
M. R. Molas,
M. Zinkiewicz,
Ł. Bala,
K. Nogajewski,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is obse…
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Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is observed in 2L MoTe$_2$. The intensity decreases with decreasing temperature down to 220 K and the A$_{1g}$ mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures and at T=5 K it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe$_2$ in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode, (with vibrations of tellurium atoms in the central layer shifted by 180$^o$ with respect to the vibrations in outer layers), only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe$_2$ is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe$_2$.
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Submitted 24 November, 2016; v1 submitted 14 August, 2016;
originally announced August 2016.
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Radiatively limited dephasing and exciton dynamics in MoSe$_2$ monolayers
Authors:
Tomasz Jakubczyk,
Valentin Delmonte,
Maciej Koperski,
Karol Nogajewski,
Clément Faugeras,
Wolfgang Langbein,
Marek Potemski,
Jacek Kasprzak
Abstract:
By implementing four-wave mixing (FWM) micro-spectroscopy we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe$_2$. We reveal their dephasing times T$_2$ and radiative lifetime T$_1$ in a sub-picosecond (ps) range, approaching T$_2$=2T$_1$, and thus indicating radiatively limited dephasing at a temperature of 6$\,$K. We elucidate the dephasing mechanisms by…
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By implementing four-wave mixing (FWM) micro-spectroscopy we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe$_2$. We reveal their dephasing times T$_2$ and radiative lifetime T$_1$ in a sub-picosecond (ps) range, approaching T$_2$=2T$_1$, and thus indicating radiatively limited dephasing at a temperature of 6$\,$K. We elucidate the dephasing mechanisms by varying the temperature and by probing various locations on the flake exhibiting a different local disorder. At a nanosecond range, we observe the residual FWM produced by the incoherent excitons, which initially disperse towards the dark states, but then relax back to the optically active states within the light cone. By introducing polarization-resolved excitation, we infer inter-valley exciton dynamics, showing an initial polarization degree of around 30$\,\%$, constant during the initial sub-picosecond decay, followed by the depolarization on a picosecond timescale. The FWM hyperspectral imaging reveals the doped and undoped areas of the sample, allowing to investigate the neutral exciton, the charged one or both transitions at the same time. In the latter case, we observe the exciton-trion beating in the coherence evolution indicating their coherent coupling.
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Submitted 24 June, 2016;
originally announced June 2016.
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Resonance effects in the Raman scattering of mono- and few layers MoSe$_2$
Authors:
P. Soubelet,
A. E. Bruchhausen,
A. Fainstein,
K. Nogajewski,
C. Faugeras
Abstract:
Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono- and multi-layers 2H-molybdenum diselenide (MoSe$_2$) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A- and E- symmetry type phonons present resonances with A and B excitons of MoSe$_2$ together with a marked increas…
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Using resonant Raman scattering spectroscopy with 25 different laser lines, we describe the Raman scattering spectra of mono- and multi-layers 2H-molybdenum diselenide (MoSe$_2$) as well as the different resonances affecting the most pronounced features. For high-energy phonons, both A- and E- symmetry type phonons present resonances with A and B excitons of MoSe$_2$ together with a marked increase of intensity when exciting at higher energy, close to the C exciton energy. We observe symmetry dependent exciton-phonon coupling affecting mainly the low-energy rigid layer phonon modes. The shear mode for multilayer displays a pronounced resonance with the C exciton while the breathing mode has an intensity that grows with the excitation laser energy, indicating a resonance with electronic excitations at energies higher than that of the C exciton.
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Submitted 16 March, 2016;
originally announced March 2016.
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Experimental approval of the extended flat bands and gapped subbands in rhombohedral multilayer graphene
Authors:
Y. Henni,
H. P. Ojeda Collado,
K. Nogajewski,
M. R. Molas,
G. Usaj,
C. A. Balseiro,
M. Orlita,
M. Potemski,
C. Faugeras
Abstract:
Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic properties of ABC graphene multilayers. Here, we report the first magneto optical study of a large ABC domain in a graphene multilayers flake, with ABC sequences excee…
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Graphene layers are known to stack in two stable configurations, namely ABA or ABC stacking, with drastically distinct electronic properties. Unlike the ABA stacking, little has been done to experimentally investigate the electronic properties of ABC graphene multilayers. Here, we report the first magneto optical study of a large ABC domain in a graphene multilayers flake, with ABC sequences exceeding 17 graphene sheets. The ABC-stacked multilayers can be fingerprinted with a characteristic electronic Raman scattering response, which persists even at room temperatures. Tracing the magnetic field evolution of the inter Landau level excitations from this domain gives strong evidence to the existence of a dispersionless electronic band near the Fermi level, characteristic of such stacking. Our findings present a simple yet powerful approach to probe ABC stacking in graphene multilayer flakes, where this highly degenerated band appears as an appealing candidate to host strongly correlated states.
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Submitted 14 March, 2016; v1 submitted 11 March, 2016;
originally announced March 2016.
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Tuning valley polarization in a WSe2 monolayer with a tiny magnetic field
Authors:
T. Smoleński,
M. Goryca,
M. Koperski,
C. Faugeras,
T. Kazimierczuk,
K. Nogajewski,
P. Kossacki,
M. Potemski
Abstract:
In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some…
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In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some limitations on the development of opto-valleytronics. Here we show that inter-valley scattering of excitons can be significantly suppressed in a $\mathrm{WSe}_2$ monolayer, a direct-gap two-dimensional semiconductor with the exciton ground state being optically dark. We demonstrate that the already inefficient relaxation of the exciton pseudospin in such system can be suppressed even further by the application of a tiny magnetic field of $\sim$100 mT. Time-resolved spectroscopy reveals the pseudospin dynamics to be a two-step relaxation process. An initial decay of the pseudospin occurs at the level of dark excitons on a time scale of 100 ps, which is tunable with a magnetic field. This decay is followed by even longer decay ($>1$ ns), once the dark excitons form more complex objects allowing for their radiative recombination. Our finding of slow valley pseudospin relaxation easily manipulated by the magnetic field open new prospects for engineering the dynamics of the valley pseudospin in transition metal dichalcogenides.
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Submitted 2 December, 2015;
originally announced December 2015.
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Raman scattering in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. Zinkiewicz,
K. Nogajewski,
M. R. Molas,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can b…
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We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can be explained in terms of interlayer interactions between single atomic planes of MoTe$_{2}$. In the case of low-energy shear and breathing modes of rigid interlayer vibrations it is shown that their energy evolution with the number of layers can be well reproduced within a linear chain model with only the nearest neighbor interaction taken into account. Based on this model the corresponding in-plane and out-of-plane force constants are determined. We also show that the Raman scattering in MoTe$_{2}$ measured using 514.5 nm (2.41 eV) laser light excitation results in much simpler spectra. We argue that the rich structure of the out-of-plane vibrational modes observed in Raman scattering spectra excited with the use of 632.8 nm laser light results from its resonance with the electronic transition at the M or K points of the MoTe$_{2}$ first Brillouin zone.
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Submitted 15 April, 2016; v1 submitted 23 November, 2015;
originally announced November 2015.
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Exciton band structure in layered MoSe2: from a monolayer to the bulk limit
Authors:
Ashish Arora,
Karol Nogajewski,
Maciej R. Molas,
Maciej Koperski,
Marek Potemski
Abstract:
We present the micro-photoluminescence ($μ$PL) and micro-reflectance contrast spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenin…
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We present the micro-photoluminescence ($μ$PL) and micro-reflectance contrast spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard formalisms previously developed for semiconductors. A peculiar shape of the optical response of the ground state (A) exciton in monolayer MoSe2 is tentatively attributed to the appearance of Fano-type resonance. Rather trivial and clearly decaying PL spectra of monolayer MoSe2 with temperature confirm that the ground state exciton in this material is optically bright in contrast to a dark exciton ground state in monolayer WSe2.
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Submitted 1 December, 2015; v1 submitted 21 September, 2015;
originally announced September 2015.
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Excitonic resonances in thin films of WSe2: From monolayer to bulk material
Authors:
Ashish Arora,
Maciej Koperski,
Karol Nogajewski,
Jacques Marcus,
Clement Faugeras,
Marek Potemski
Abstract:
We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strengt…
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We present optical spectroscopy (photoluminescence and reflectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modifications of the strength of Coulomb interaction as well. The observed temperature-activated energy shift and broadening of the fundamental direct exciton are well accounted for by standard formalisms used for conventional semiconductors. A large increase of the photoluminescence yield with temperature is observed in WSe2 monolayer, indicating the existence of competing radiative channels. The observation of absorption-type resonances due to both neutral and charged excitons in WSe2 monolayer is reported and the effect of the transfer of oscillator strength from charged to neutral exciton upon increase of temperature is demonstrated.
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Submitted 5 March, 2015;
originally announced March 2015.
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Landau level spectroscopy of electron-electron interactions in graphene
Authors:
C. Faugeras,
S. Berciaud,
P. Leszczynski,
Y. Henni,
K. Nogajewski,
M. Orlita,
T. Taniguchi,
K. Watanabe,
C. Forsythe,
P. Kim,
R. Jalil,
A. K. Geim,
D. M. Basko,
M. Potemski
Abstract:
We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle p…
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We present magneto-Raman scattering studies of electronic inter Landau level excitations in quasi-neutral graphene samples with different strengths of Coulomb interaction. The band velocity associated with these excitations is found to depend on the dielectric environment, on the index of Landau level involved, and to vary as a function of the magnetic field. This contradicts the single-particle picture of non-interacting massless Dirac electrons, but is accounted for by theory when the effect of electron-electron interaction is taken into account. Raman active, zero-momentum inter Landau level excitations in graphene are sensitive to electron-electron interactions due to the non-applicability of the Kohn theorem in this system, with a clearly non-parabolic dispersion relation.
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Submitted 29 November, 2014;
originally announced December 2014.
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Single photon emitters in exfoliated WSe2 structures
Authors:
M. Koperski,
K. Nogajewski,
A. Arora,
J. Marcus,
P. Kossacki,
M. Potemski
Abstract:
Crystal structure imperfections in solids often act as efficient carrier trap** centers which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are wellwidth or composition fluctuations in semiconductor heterostructures (resulting in a formation of quantum dots) and coloured centers in wide bandgap (e. g., diamond) materia…
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Crystal structure imperfections in solids often act as efficient carrier trap** centers which, when suitably isolated, act as sources of single photon emission. The best known examples of such attractive imperfections are wellwidth or composition fluctuations in semiconductor heterostructures (resulting in a formation of quantum dots) and coloured centers in wide bandgap (e. g., diamond) materials. In the case of recently investigated thin films of layered compounds, the crystal imperfections may logically be expected to appear at the edges of commonly investigated few-layer flakes of these materials, exfoliated on alien substrates. Here, we report on comprehensive optical microspectroscopy studies of thin layers of tungsten diselenide, WSe2, a representative semiconducting dichalcogenide with a bandgap in the visible spectral range. At the edges of WSe2 flakes, transferred onto Si/SiO2 substrates, we discover centers which, at low temperatures, give rise to sharp emission lines (0.1 meV linewidth). These narrow emission lines reveal the effect of photon antibunching, the unambiguous attribute of single photon emitters. The optical response of these emitters is inherently linked to two-dimensional properties of the WSe2 monolayer, as they both give rise to luminescence in the same energy range, have nearly identical excitation spectra and very similar, characteristically large Zeeman effects. With advances in the structural control of edge imperfections, thin films of WSe2 may provide added functionalities, relevant for the domain of quantum optoelectronics.
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Submitted 13 November, 2014; v1 submitted 11 November, 2014;
originally announced November 2014.