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Magnetic imaging and domain nucleation in CrSBr down to the 2D limit
Authors:
Yishay Zur,
Avia Noah,
Carla Boix-Constant,
Samuel Mañas-Valero,
Nofar Fridman,
Ricardo Rama-Eiroa,
Martin E. Huber,
Elton J. G. Santos,
Eugenio Coronado,
Yonathan Anahory
Abstract:
Recent advancements in 2D materials have revealed the potential of van der Waals magnets, and specifically of their magnetic anisotropy that allows applications down to the 2D limit. Among these materials, CrSBr has emerged as a promising candidate, because its intriguing magnetic and electronic properties have appeal for both fundamental and applied research in spintronics or magnonics. Here, nan…
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Recent advancements in 2D materials have revealed the potential of van der Waals magnets, and specifically of their magnetic anisotropy that allows applications down to the 2D limit. Among these materials, CrSBr has emerged as a promising candidate, because its intriguing magnetic and electronic properties have appeal for both fundamental and applied research in spintronics or magnonics. Here, nano SQUID-on-tip (SOT) microscopy is used to obtain direct magnetic imaging of CrSBr flakes with thicknesses ranging from monolayer (N=1) to few-layer (N=5). The ferromagnetic order is preserved down to the monolayer, while the antiferromagnetic coupling of the layers starts from the bilayer case. For odd layers, at zero applied magnetic field, the stray field resulting from the uncompensated layer is directly imaged. The progressive spin reorientation along the out-of-plane direction (hard axis) is also measured with a finite applied magnetic field, allowing to evaluate the anisotropy constant, which remains stable down to the monolayer and is close to the bulk value. Finally, by selecting the applied magnetic field protocol, the formation of Néel magnetic domain walls is observed down to the single layer limit.
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Submitted 20 September, 2023;
originally announced September 2023.
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Nano-Patterned Magnetic Edges in CrGeTe3 for Quasi 1-D Spintronic Devices
Authors:
Avia Noah,
Yishay Zur,
Nofar Fridman,
Sourabh Singh,
Alon Gutfreund,
Edwin Herrera,
Atzmon Vakahi,
Sergei Remennik,
Martin Emile Huber,
Snir Gazit,
Hermann Suderow,
Hadar Steinberg,
Oded Millo,
Yonathan Anahory
Abstract:
The synthesis of two-dimensional van der Waals magnets has paved the way for both technological applications and fundamental research on magnetism confined to ultra-small length scales. Edge magnetic moments in ferromagnets are expected to be less magnetized than in the sample interior because of the reduced amount of neighboring ferromagnetic spins at the sample edge. We recently demonstrated tha…
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The synthesis of two-dimensional van der Waals magnets has paved the way for both technological applications and fundamental research on magnetism confined to ultra-small length scales. Edge magnetic moments in ferromagnets are expected to be less magnetized than in the sample interior because of the reduced amount of neighboring ferromagnetic spins at the sample edge. We recently demonstrated that CrGeTe3 (CGT) flakes thinner than 10 nm are hard ferromagnets; i.e., they exhibit an open hysteresis loop. In contrast, thicker flakes exhibit zero net remnant field in the interior, with hard ferromagnetism present only at the cleaved edges. This experimental observation suggests that a nontrivial interaction exists between the sample edge and the interior. Here, we demonstrate that artificial edges fabricated by focus ion beam etching also display hard ferromagnetism. This enables us to write magnetic nanowires in CGT directly and use this method to characterize the magnetic interaction between the interior and edge. The results indicate that the interior saturation and depolarization fields depend on the lateral dimensions of the sample. Most notably, the interior region between the edges of a sample narrower than 300 nm becomes a hard ferromagnet, suggesting an enhancement of the magnetic exchange induced by the proximity of the edges. Last, we find that the CGT regions amorphized by the gallium beam are nonmagnetic, which introduces a novel method to tune the local magnetic properties of CGT films, potentially enabling integration into spintronic devices.
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Submitted 23 May, 2023;
originally announced May 2023.
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Direct Observation of a Superconducting Vortex Diode
Authors:
Alon Gutfreund,
Hisakazu Matsuki,
Vadim Plastovets,
Avia Noah,
Laura Gorzawski,
Nofar Fridman,
Guang Yang,
Alexander Buzdin,
Oded Millo,
Jason W. A. Robinson,
Yonathan Anahory
Abstract:
The interplay between magnetism and superconductivity can lead to unconventional proximity and Josephson effects. A related phenomenon that has recently attracted considerable attention is the superconducting diode effect, in which a non-reciprocal critical current emerges. Although superconducting diodes based on superconducting/ferromagnetic (S/F) bilayers were demonstrated more than a decade ag…
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The interplay between magnetism and superconductivity can lead to unconventional proximity and Josephson effects. A related phenomenon that has recently attracted considerable attention is the superconducting diode effect, in which a non-reciprocal critical current emerges. Although superconducting diodes based on superconducting/ferromagnetic (S/F) bilayers were demonstrated more than a decade ago, the precise underlying mechanism remains unclear. While not formally linked to this effect, the Fulde-Ferrell-Larkin-Ovchinikov (FFLO) state is a plausible mechanism, due to the 2-fold rotational symmetry breaking caused by the finite center-of-mass-momentum of the Cooper pairs. Here, we directly observe, for the first time, a tunable superconducting vortex diode in Nb/EuS (S/F) bilayers. Based on our nanoscale SQUID-on-tip (SOT) microscope and supported by in-situ transport measurements, we propose a theoretical model that captures our key results. Thus, we determine the origin for the vortex diode effect, which builds a foundation for new device concepts.
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Submitted 17 January, 2023;
originally announced January 2023.
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Chip-Integrated Vortex Manipulation
Authors:
Itai Keren,
Alon Gutfreund,
Avia Noah,
Nofar Friedman,
Angelo Di Bernardo,
Hadar Steinberg,
Yonathan Anahory
Abstract:
Abrikosov Vortices have long been considered as means to encode classical information in low-temperature logic circuits (1) and memory devices (2-4). Although it is possible to control individual vortices using local probes (5-11), scalability towards the control of of multiple vortices remains challenging. Vortex logic devices require means to shuttle selected vortices reliably over long distance…
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Abrikosov Vortices have long been considered as means to encode classical information in low-temperature logic circuits (1) and memory devices (2-4). Although it is possible to control individual vortices using local probes (5-11), scalability towards the control of of multiple vortices remains challenging. Vortex logic devices require means to shuttle selected vortices reliably over long distances between engineered pinning potentials. Concomitantly, all other vortices should remains fixed to their precise locations. Here we demonstrate such capabilities using Nb loops patterned below a NbSe$_2$ layer. SQUID-on-Tip (SOT) microscopy reveals that the loops can position vortices in sites designated to a precision better than 100 nm; they can realize "push" and "pull" operations of vortices as far as 3$μ$m. Successive application of such operations shuttles a vortex between adjacent loops. Our results may be used as means to integrate vortices in future quantum circuitry. Strikingly, we are able to demonstrate a winding operation. Such winding, if realized in topological superconductors, is considered an essential part of future topological quantum information processing (12-17).
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Submitted 12 December, 2022;
originally announced December 2022.
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Interior and edge magnetization in thin exfoliated CrGeTe3 films
Authors:
Avia Noah,
Hen Alpern,
Sourabh Singh,
Alon Gutfreund,
Gilad Zisman,
Tomer D. Feld,
Atzmon Vakahi,
Sergei Remennik,
Yossi Paltiel,
Martin E. Huber,
Victor Barrena,
Hermann Suderow,
Hadar Steinberg,
Oded Millo,
Yonathan Anahory
Abstract:
CrGeTe3 (CGT) is a semiconducting vdW ferromagnet shown to possess magnetism down to a two-layer thick sample. Although CGT is one of the leading candidates for spintronics devices, a comprehensive analysis of CGT thickness dependent magnetization is currently lacking. In this work, we employ scanning SQUID-on-tip (SOT) microscopy to resolve the magnetic properties of exfoliated CGT flakes at 4.2…
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CrGeTe3 (CGT) is a semiconducting vdW ferromagnet shown to possess magnetism down to a two-layer thick sample. Although CGT is one of the leading candidates for spintronics devices, a comprehensive analysis of CGT thickness dependent magnetization is currently lacking. In this work, we employ scanning SQUID-on-tip (SOT) microscopy to resolve the magnetic properties of exfoliated CGT flakes at 4.2 K. Combining transport measurements of CGT/NbSe2 samples with SOT images, we present the magnetic texture and hysteretic magnetism of CGT, thereby matching the global behavior of CGT to the domain structure extracted from local SOT magnetic imaging. Using this method, we provide a thickness dependent magnetization state diagram of bare CGT films. No zero-field magnetic memory was found for films thicker than 10 nm and hard ferromagnetism was found below that critical thickness. Using scanning SOT microscopy, we identify a unique edge magnetism, contrasting the results attained in the CGT interior.
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Submitted 18 July, 2022;
originally announced July 2022.
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Hidden spin-texture at topological domain walls drive exchange bias in a Weyl semimetal
Authors:
Avia Noah,
Filip Toric,
Tomer D. Feld,
Gilad Zissman,
Alon Gutfreund,
Dor Tsruya,
T. R. Devidas,
Hen Alpern,
Hadar Steinberg,
Martin E. Huber,
James G. Analytis,
Snir Gazit,
Ella Lachman,
Yonathan Anahory
Abstract:
Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets, where the exchange field of the former acts as a means to pin the polarization of the latter. In the present study, we report an unusual instance of this phenom…
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Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets, where the exchange field of the former acts as a means to pin the polarization of the latter. In the present study, we report an unusual instance of this phenomenon in the topological Weyl semimetal Co3Sn2S2, where the magnetic interfaces associated with domain walls suffice to bias the entire ferromagnetic bulk. Remarkably, our data suggests the presence of a hidden order parameter whose behavior can be independently tuned by applied magnetic fields. For micron-size samples, the domain walls are absent, and the exchange bias vanishes, suggesting the boundaries are a source of pinned uncompensated moment arising from the hidden order. The novelty of this mechanism suggests exciting opportunities lie ahead for the application of topological materials in spintronic technologies.
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Submitted 27 January, 2021;
originally announced January 2021.
