Showing 1–50 of 59 results for author: Niu, C

Topology-engineered orbital Hall effect in two-dimensional ferromagnets

Authors: Zhiqi Chen, Runhan Li, Yingxi Bai, Ning Mao, Mahmoud Zeer, Dongwook Go, Ying Dai, Baibiao Huang, Yuriy Mokrousov, Chengwang Niu

Abstract: Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrat… ▽ More Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics. △ Less

Submitted 11 April, 2024; originally announced April 2024.

Comments: 4 figures

Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality

Authors: Chang Niu, Shouyuan Huang, Neil Ghosh, Pukun Tan, Mingyi Wang, Wenzhuo Wu, Xianfan Xu, Peide D. Ye

Abstract: Chirality arises from the asymmetry of matters, where two counterparts are the mirror image of each other. The interaction between circular-polarization light and quantum materials is enhanced in chiral space groups due to the structural chirality. Tellurium (Te) possesses the simplest chiral crystal structure, with Te atoms covalently bonded into a spiral atomic chain (left- or right-handed) with… ▽ More Chirality arises from the asymmetry of matters, where two counterparts are the mirror image of each other. The interaction between circular-polarization light and quantum materials is enhanced in chiral space groups due to the structural chirality. Tellurium (Te) possesses the simplest chiral crystal structure, with Te atoms covalently bonded into a spiral atomic chain (left- or right-handed) with a periodicity of three. Here, we investigate the tunable circular photo-electric responses in 2D Te field-effect transistor with different chirality, including the longitudinal circular photogalvanic effect induced by the radial spin texture (electron-spin polarization parallel to the electron momentum direction) and the circular photovoltaic induced by the chiral crystal structure (helical Te atomic chains). Our work demonstrates the controllable manipulation of the chirality degree of freedom in materials. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Comments: 30 pages

Journal ref: Nano Letters 23, no. 8 (2023): 3599-3606

Route to stabilize cubic gauche polynitrogen to ambient conditions via surface-saturation by hydrogen

Authors: Guo Chen, Cao** Niu, Wenming Xia, Jie Zhang, Zhi Zeng, Xianlong Wang

Abstract: Cubic gauche polynitrogen (cg-N) is an attractive high-energy density material. However, high-pressure synthesized cg-N will decompose at low-pressure and cannot exist at ambient conditions. Here, the stabilities of cg-N surfaces with and without saturations at different pressures and temperatures are investigated systematically. Pristine surfaces at 0 GPa are very brittle and will decompose at 30… ▽ More Cubic gauche polynitrogen (cg-N) is an attractive high-energy density material. However, high-pressure synthesized cg-N will decompose at low-pressure and cannot exist at ambient conditions. Here, the stabilities of cg-N surfaces with and without saturations at different pressures and temperatures are investigated systematically. Pristine surfaces at 0 GPa are very brittle and will decompose at 300 K, especially (1 1 0) surface will collapse completely just after structural relaxation, whereas the decompositions of surfaces can be suppressed by applying pressure, indicating that surface instability causes the cg-N decomposition at low-pressure. Due to the saturation of dangling bonds and transferring electrons to the surfaces, saturation with H can stabilize surfaces at ambient conditions, while OH saturation cannot because of getting electrons from the surfaces. An acidic environment or surface saturation with less electronegative adsorbates is more favorable for the stability of polymerized nitrogen. △ Less

Submitted 4 April, 2023; originally announced April 2023.

Comments: 21 pages, 5 figures

Ferroelectric higher-order topological insulator in two dimensions

Authors: Ning Mao, Runhan Li, Xiaorong Zou, Ying Dai, Baibiao Huang, Chengwang Niu

Abstract: The interplay between ferroelectricity and band topology can give rise to a wide range of both fundamental and applied research. Here, we map out the emergence of nontrivial corner states in two-dimensional ferroelectrics, and remarkably demonstrate that ferroelectricity and corner states are coupled together by crystallographic symmetry to realize the electric control of higher-order topology. Im… ▽ More The interplay between ferroelectricity and band topology can give rise to a wide range of both fundamental and applied research. Here, we map out the emergence of nontrivial corner states in two-dimensional ferroelectrics, and remarkably demonstrate that ferroelectricity and corner states are coupled together by crystallographic symmetry to realize the electric control of higher-order topology. Implemented by density functional theory, we identify a series of experimentally synthesized two-dimensional ferroelectrics, such as In$_2$Se$_3$, BN bilayers, and SnS, as realistic material candidates for the proposed ferroelectric higher-order topological insulators. Our work not only sheds new light on traditional ferroelectric materials but also opens an avenue to bridge the higher-order topology and ferroelectricity that provides a nonvolatile handle to manipulate the topology in next-generation electronic devices. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe$_2$

Authors: Lukáš Nádvorník, Oliver Gueckstock, Lukas Braun, Chengwang Niu, Joachim Gräfe, Gunther Richter, Gisela Schütz, Hidenori Takagi, Tom S. Seifert, Peter Kubaščík, Avanindra K. Pandeya, Abdelmadjid Anane, Heejun Yang, Amilcar Bedoya-Pinto, Stuart S. P. Parkin, Martin Wolf, Yuriy Mokrousov, Hiroyuki Nakamura, Tobias Kampfrath

Abstract: Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafa… ▽ More Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafast laser excitation triggers an ultrafast spin current that is converted into an in-plane charge current and, thus, a measurable THz electromagnetic pulse. The THz signal amplitude as a function of the NbSe$_2$ thickness shows that the measured signals are fully consistent with an ultrafast optically driven injection of an in-plane-polarized spin current into NbSe$_2$. Modeling of the spin-current dynamics reveals that a sizable fraction of the total S2C originates from the bulk of NbSe$_2$ with the same, negative, sign as the spin Hall angle of pure Nb. By quantitative comparison of the emitted THz radiation from F|NbSe$_2$ to F|Pt reference samples and the results of ab-initio calculations, we estimate that the spin Hall angle of NbSe$_2$ for an in-plane polarized spin current lies between -0.2% and -1.1%, while the THz spin-current relaxation length is of the order of a few nanometers. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Orbital shift-induced boundary obstructed topological materials with a large energy gap

Authors: Ning Mao, Runhan Li, Ying Dai, Baibiao Huang, Binghai Yan, Chengwang Niu

Abstract: We propose boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states.… ▽ More We propose boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states. To demonstrate such orbital-shift-induced boundary obstructed topological insulators, we predict eight material candidates, all of which were overlooked in present topological databases. Metallic surface states, hinge states, or corner states cover the large bulk energy gap (for example, more than 1 eV in TlGaTe$_2$) at related boundary, which are ready for experimental detection. Additionally, we find these materials are also fragile topological insulators with hourglass like surface states. △ Less

Submitted 6 July, 2022; originally announced July 2022.

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Authors: Zehao Lin, Mengwei Si, Vahid Askarpour, Chang Niu, Adam Charnas, Zhongxia Shang, Yizhi Zhang, Yaoqiao Hu, Zhuocheng Zhang, Pai-Ying Liao, Kyeongjae Cho, Haiyan Wang, Mark Lundstrom, Jesse Maassen, Peide D. Ye

Abstract: High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm,… ▽ More High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A record high transconductance of 4 S/mm is also achieved among all transistors with a planar structure. It is found that a high carrier density and high electron velocity both contribute to this remarkably high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V and split C-V measurements at room temperature confirm a high carrier density up to 6-7*10^13 /cm2 and a high velocity of about 10^7 cm/s. Ultra-thin oxide semiconductors, with a CNL located deep inside the conduction band, represent a promising new direction for the search of alternative channel materials for high-performance semiconductor devices. △ Less

Submitted 30 April, 2022; originally announced May 2022.

Doubled Quantum Spin Hall Effect with High-Spin Chern Number in $α$-Antimonene and $α$-Bismuthene

Authors: Yingxi Bai, Linke Cai, Ning Mao, Runhan Li, Ying Dai, Baibiao Huang, Chengwang Niu

Abstract: The discovery of quantum spin Hall effect has ignited the field of topological physics with vast variety of exotic properties. Here, we present the emergence of doubled quantum spin Hall effect in two dimensions characterized with a high spin Chern number of ${\mathcal C_S}=2$ and two pairs of helical edge states. Although is overlooked and invisible in topological quantum chemistry and symmetry i… ▽ More The discovery of quantum spin Hall effect has ignited the field of topological physics with vast variety of exotic properties. Here, we present the emergence of doubled quantum spin Hall effect in two dimensions characterized with a high spin Chern number of ${\mathcal C_S}=2$ and two pairs of helical edge states. Although is overlooked and invisible in topological quantum chemistry and symmetry indicator theory, the already experimentally synthesized $α$-antimonene and $α$-bismuthene are revealed as realistic material candidates of predicted topological states with band inversions emerging at generic $k$-points, rather than the high-symmetry momenta. Remarkably, the nontrivial energy gap can be as large as 464 meV for $α$-bismuthene, indicating the high possibility of room-temperature observation of the doubled quantum spin Hall effect. Moreover, a four-band effective model is constructed to demonstrate further the feasibility of attaining this type of nontrivial topology. Our results not only uncover a novel topological character of antimony and bismuth, but will also facilitate the experimental characterization of the previously overlooked hidden topology. △ Less

Submitted 7 February, 2022; originally announced February 2022.

Comments: 4 figures

Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium

Authors: Chang Niu, Gang Qiu, Yixiu Wang, Pukun Tan, Mingyi Wang, Jie Jian, Haiyan Wang, Wenzhuo Wu, Peide D. Ye

Abstract: Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron… ▽ More Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the chirality degree of freedom into electron transport. △ Less

Submitted 12 September, 2023; v1 submitted 21 January, 2022; originally announced January 2022.

Comments: 44 pages, Nano Letters (2023)

Surface Van Hove Singularity Enabled Efficient Catalysis: The Cases of CO Oxidation and Hydrogen Evolution Reactions

Authors: Liangliang Liu, Chunyan Wang, Liying Zhang, Chengyan Liu, Chunyao Niu, Zai** Zeng, Dongwei Ma, Yu Jia

Abstract: Surface Van Hove singularity (SVHS), defined as the surface states near the Fermi level (EF) in low-dimensional systems, triggers exciting physical phenomena distinct from bulk. We herein explore theoretically the potential role of SVHS in catalysis taking CO oxidation reaction as prototype over graphene/Ca2N (Gra/Ca2N) heterojunction and Pt2HgSe3 (001) surface. It is demonstrated that both system… ▽ More Surface Van Hove singularity (SVHS), defined as the surface states near the Fermi level (EF) in low-dimensional systems, triggers exciting physical phenomena distinct from bulk. We herein explore theoretically the potential role of SVHS in catalysis taking CO oxidation reaction as prototype over graphene/Ca2N (Gra/Ca2N) heterojunction and Pt2HgSe3 (001) surface. It is demonstrated that both systems with SVHS could serve as an electron bath to promote O2 adsorption and subsequent CO oxidation with low energy barriers of 0.2 ~ 0.6 eV for Gra/Ca2N and Pt2HgSe3 (001) surface. Importantly, the catalytically active sites associated with SVHS are well-defined and uniformly distributed over the whole surface plane, which is superior to the commonly adopted defect or do** strategy, and further the chemical reactivity of SVHS also can be tuned easily via adjusting its position with respect to EF. Our study demonstrates the enabling power of SVHS, and provides novel physical insights into the promising potential role of VHS in designing high-efficiency catalysts. △ Less

Submitted 11 September, 2021; originally announced September 2021.

Hidden wallpaper fermion and third-order topological insulator

Authors: Ning Mao, Hao Wang, Ying Dai, Baibiao Huang, Chengwang Niu

Abstract: Nonsymmorphic symmetry can induce exotic wallpaper fermions, e.g., hourglass fermion, fourfold-degenerate Dirac fermion, and Möbius fermion, as commonly believed only in nonsymmorphic wallpaper groups. Here, we extend the notion of wallpaper fermions to symmorphic wallpaper groups, and remarkably uncover the emergence of long-awaited third-order topological insulators. The symmetry analysis and k… ▽ More Nonsymmorphic symmetry can induce exotic wallpaper fermions, e.g., hourglass fermion, fourfold-degenerate Dirac fermion, and Möbius fermion, as commonly believed only in nonsymmorphic wallpaper groups. Here, we extend the notion of wallpaper fermions to symmorphic wallpaper groups, and remarkably uncover the emergence of long-awaited third-order topological insulators. The symmetry analysis and k $\cdot$ p models reveal that nonessential symmetries play an essential role for obtaining the previously overlooked hidden surface spectrum. Based on this, we present the hourglass fermion, fourfold-degenerate Dirac fermion, and Möbius fermion in the (001) surface of Tl$_4$XTe$_3$ (X = Pb/Sn) with a symmorphic wallpaper group $p4m$. Remarkably, 16 helical corner states reside on eight corners in Kramers pair, rendering the first real electronic material of third-order topological insulator. A time-reversal polarized octupole polarization is defined to uncover the nontrivial third-order topology, as is implemented by the 2$^{nd}$ and 3$^{rd}$ order Wilson loop calculations. Our results could considerably broaden the range of wallpaper fermions and lay the foundation for future experimental investigations of third-order topological insulators. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well

Authors: Chang Niu, Gang Qiu, Yixiu Wang, Mengwei Si, Wenzhuo Wu, Peide D. Ye

Abstract: Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type do** using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupl… ▽ More Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type do** using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor 4, 6, and 8 are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials. △ Less

Submitted 18 July, 2021; originally announced July 2021.

Comments: Submitted to Nano Letters

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Authors: Mengwei Si, Joseph Andler, Xiao Lyu, Chang Niu, Suman Datta, Rakesh Agrawal, Peide D. Ye

Abstract: In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain stru… ▽ More In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ωmm and a low contact resistivity of 1.1{\times}10-7 Ωcm2. The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line (BEOL) CMOS application. △ Less

Submitted 22 August, 2020; originally announced August 2020.

Comments: 32 pages, 16 figures. To be published in ACS Nano

Journal ref: ACS Nano 2020, 14, 9, 11542-11547

Direct comparison of many-body methods for realistic electronic Hamiltonians

Authors: Kiel T. Williams, Yuan Yao, Jia Li, Li Chen, Hao Shi, Mario Motta, Chunyao Niu, Ushnish Ray, Sheng Guo, Robert J. Anderson, Junhao Li, Lan Nguyen Tran, Chia-Nan Yeh, Bastien Mussard, Sandeep Sharma, Fabien Bruneval, Mark van Schilfgaarde, George H. Booth, Garnet Kin-Lic Chan, Shiwei Zhang, Emanuel Gull, Dominika Zgid, Andrew Millis, Cyrus J. Umrigar, Lucas K. Wagner

Abstract: A large collaboration carefully benchmarks 20 first principles many-body electronic structure methods on a test set of 7 transition metal atoms, and their ions and monoxides. Good agreement is attained between the 3 systematically converged methods, resulting in experiment-free reference values. These reference values are used to assess the accuracy of modern emerging and scalable approaches to th… ▽ More A large collaboration carefully benchmarks 20 first principles many-body electronic structure methods on a test set of 7 transition metal atoms, and their ions and monoxides. Good agreement is attained between the 3 systematically converged methods, resulting in experiment-free reference values. These reference values are used to assess the accuracy of modern emerging and scalable approaches to the many-electron problem. The most accurate methods obtain energies indistinguishable from experimental results, with the agreement mainly limited by the experimental uncertainties. Comparison between methods enables a unique perspective on calculations of many-body systems of electrons. △ Less

Submitted 5 October, 2019; v1 submitted 30 September, 2019; originally announced October 2019.

Comments: Simons collaboration on the many-electron problem

Journal ref: Phys. Rev. X 10, 011041 (2020)

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization

Authors: Chang Niu, Gang Qiu, Yixiu Wang, Zhuocheng Zhang, Mengwei Si, Wenzhuo Wu, Peide D. Ye

Abstract: Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric do** technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on… ▽ More Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric do** technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications. △ Less

Submitted 14 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 205414 (2020)

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Authors: Gang Qiu, Chang Niu, Yixiu Wang, Mengwei Si, Zhuocheng Zhang, Wenzhuo Wu, Peide D. Ye

Abstract: Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation… ▽ More Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the 2D form of tellurium, possesses chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric do** and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors. △ Less

Submitted 26 April, 2020; v1 submitted 29 August, 2019; originally announced August 2019.

Comments: 5 figures for main text; 8 figures for supporting information

The Ratio Law of the Structure Evolution and Stability for Ti$_n$O$_m$ ($n=3$-$18$, $m=1$-$2n$) Clusters

Authors: Hongbo Du, Yu Jia, Chunyao Niu, Kaige Hu, Haifeng Li, Lingmin Yu

Abstract: Most theoretical investigations about titanium oxide clusters focus on (TiO$_2$)$_n$. However, many Ti$_n$O$_m$ clusters with $m\neq 2n$ are produced experimentally. In this work, first-principles calculations are performed to probe the evolution of Ti$_n$O$_m$ clusters. Our investigations show that for $n=3$-$11$, there exist one relatively stable specie; while for $n=12$-$18$, there are two rela… ▽ More Most theoretical investigations about titanium oxide clusters focus on (TiO$_2$)$_n$. However, many Ti$_n$O$_m$ clusters with $m\neq 2n$ are produced experimentally. In this work, first-principles calculations are performed to probe the evolution of Ti$_n$O$_m$ clusters. Our investigations show that for $n=3$-$11$, there exist one relatively stable specie; while for $n=12$-$18$, there are two relatively stable species: Ti-rich and O-rich species. HOMO-LOMO calculations show that the gap can be tuned by changing the size and configurations of Ti$_n$O$_m$ clusters. Our investigation provides insights into the evolution of cluster-to-bulk process in titanium oxide. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Journal ref: Chemical Physics Letters 731 (2019) 136574

Graphene Induced Large Shift of Surface Plasmon Resonances of Gold Films: Effective Medium Theory for Atomically Thin Materials

Authors: Md Kamrul Alam, Chao Niu, Yanan Wang, Wei Wang, Yang Li, Chong Dai, Tian Tong, Xiaonan Shan, Earl Charlson, Steven Pei, Xiang-Tian Kong, Yandi Hu, Alexey Belyanin, Gila Stein, Zhao** Liu, Jonathan Hu, Zhiming Wang, Jiming Bao

Abstract: Despite successful modeling of graphene as a 0.34-nm thick optical film synthesized by exfoliation or chemical vapor deposition (CVD), graphene induced shift of surface plasmon resonance (SPR) of gold films has remained controversial. Here we report the resolution of this controversy by develo** a clean CVD graphene transfer method and extending Maxwell-Garnet effective medium theory (EMT) to 2D… ▽ More Despite successful modeling of graphene as a 0.34-nm thick optical film synthesized by exfoliation or chemical vapor deposition (CVD), graphene induced shift of surface plasmon resonance (SPR) of gold films has remained controversial. Here we report the resolution of this controversy by develo** a clean CVD graphene transfer method and extending Maxwell-Garnet effective medium theory (EMT) to 2D materials. A SPR shift of 0.24 is obtained and it agrees well with 2D EMT in which wrinkled graphene is treated as a 3-nm graphene/air layered composite, in agreement with the average roughness measured by atomic force microscope. Because the anisotropic built-in boundary condition of 2D EMT is compatible with graphene's optical anisotropy, graphene can be modelled as a film thicker than 0.34-nm without changing its optical property; however, its actual roughness, i.e., effective thickness will significantly alter its response to strong out-of-plane fields, leading to a larger SPR shift. △ Less

Submitted 17 April, 2019; originally announced April 2019.

Comments: 18 pages, 5 figures

Journal ref: Phys. Rev. Research 2, 013008 (2020)

A Ferroelectric Semiconductor Field-Effect Transistor

Authors: Mengwei Si, Atanu K. Saha, Shengjie Gao, Gang Qiu, **gkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K. Gupta, Peide D. Ye

Abstract: Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-eff… ▽ More Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage. △ Less

Submitted 9 January, 2020; v1 submitted 7 December, 2018; originally announced December 2018.

Comments: 44 pages, 16 figures

Journal ref: Nat. Electron. 2, 580-586 (2019)

Multi-Cell Monte Carlo Method for Phase Prediction

Authors: Changning Niu, You Rao, Wolfgang Windl, Maryam Ghazisaeidi

Abstract: We propose a Multi-Cell Monte Carlo algorithm, or (MC)^2, for predicting stable phases in chemically complex crystalline systems. Free atomic transfer among cells is achieved via the application of the lever rule, where an assigned molar ratio virtually controls the percentage of each cell in the overall simulation, making (MC)^2 the first successful algorithm for simulating phase coexistence in c… ▽ More We propose a Multi-Cell Monte Carlo algorithm, or (MC)^2, for predicting stable phases in chemically complex crystalline systems. Free atomic transfer among cells is achieved via the application of the lever rule, where an assigned molar ratio virtually controls the percentage of each cell in the overall simulation, making (MC)^2 the first successful algorithm for simulating phase coexistence in crystalline solids. During the application of this method, all energies are computed via direct Density Functional Theory calculations. We test the method by successful prediction of the stable phases of known binary systems. We then apply the method to a quaternary high entropy alloy. The method is particularly robust in predicting stable phases of multi-component systems for which phase diagrams do not exist. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Band gap and band alignment prediction of nitride based semiconductors using machine learning

Authors: Yang Huang, Changyou Yu, Weiguang Chen, Yuhuai Liu, Chong Li, Chunyao Niu, Fei Wang, Yu Jia

Abstract: Nitride has been drawing much attention due to its wide range of applications in optoelectronics and remains plenty of room for materials design and discovery. Here, a large set of nitrides have been designed, with their band gap and alignment being studied by first-principles calculations combined with machine learning. Band gap and band offset against wurtzite GaN accurately calculated by the co… ▽ More Nitride has been drawing much attention due to its wide range of applications in optoelectronics and remains plenty of room for materials design and discovery. Here, a large set of nitrides have been designed, with their band gap and alignment being studied by first-principles calculations combined with machine learning. Band gap and band offset against wurtzite GaN accurately calculated by the combination of screened hybrid functional of HSE and DFT-PBE were used to train and test machine learning models. After comparison among different techniques of machine learning, when elemental properties are taken as features, support vector regression (SVR) with radial kernel performs best for predicting both band gap and band offset with prediction root mean square error (RMSE) of 0.298 eV and 0.183 eV, respectively. The former is within HSE calculation uncertainty and the latter is small enough to provide reliable predictions. Additionally, when band gap calculated by DFT-PBE was added into the feature space, band gap prediction RMSE decreases to 0.099 eV. Through a feature engineering algorithm, elemental feature space based band gap prediction RMSE further drops by around 0.005 eV and the relative importance of elemental properties for band gap prediction was revealed. Finally, band gap and band offset of all designed nitrides were predicted and two trends were noticed that as the number of cation types increases, band gap tends to narrow down while band offset tends to go up. The predicted results will be a useful guidance for precise investigation on nitride engineering. △ Less

Submitted 7 April, 2019; v1 submitted 23 October, 2018; originally announced October 2018.

Comments: Contact: Yang Huang, [email protected]

Journal ref: the Journal of Materials Chemistry C, 2019

Hydrogen adsorption-induced nanomagnetism at the Si(111)-(7$\times$7) surface

Authors: Xiao-Yan Ren, Chun-Yao Niu, Seho Yi, Shunfang Li, Jun-Hyung Cho

Abstract: The creation of magnetism on non-magnetic semiconductor surfaces is of importance for the realization of spintronics devices. Especially, the coupling of electron spins within quantum nanostructures can be utilized for nanomagnetism applications. Here, we demonstrate, based on first-principles density-functional theory calculations, that the adsorption of H atoms on the Si(111)-(7$\times$7) surfac… ▽ More The creation of magnetism on non-magnetic semiconductor surfaces is of importance for the realization of spintronics devices. Especially, the coupling of electron spins within quantum nanostructures can be utilized for nanomagnetism applications. Here, we demonstrate, based on first-principles density-functional theory calculations, that the adsorption of H atoms on the Si(111)-(7$\times$7) surface induces the spin polarization of surrounding Si dangling bonds (DBs) and their spin orderings. It is revealed that the H adsorption on a rest-atom site exhibits a Jahn-Teller-like distortion that accompanies a charge transfer from the rest atom to the nearest neighboring adatoms. This charge transfer increases the local density of states of such three adatoms at the Fermi level, thereby inducing a Stoner-type instability to produce a ferrimagnetic order of adatom DBs around the adsorbed H atom. Meanwhile, the H adsorption on an adatom site cannot induce spin polarization, but, as adsorbed H atoms increase, the ferrimagnetic order of rest-atom DBs emerges through the charge transfer from rest atoms to adatoms. Our findings provide a microscopic mechanism of the H-induced spin orderings of Si DBs at the atomic scale, which paves a novel way to the design of nanoscale magnetism in the representative semiconductor surface. △ Less

Submitted 28 September, 2018; originally announced September 2018.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 98, 195424 (2018)

Linear-$T$ resistivity at high temperature

Authors: Hyun-Sik Jeong, Keun-Young Kim, Chao Niu

Abstract: The linear-$T$ resistivity is one of the characteristic and universal properties of strange metals. There have been many progress in understanding it from holographic perspective (gauge/gravity duality). In most holographic models, the linear-$T$ resistivity is explained by the property of the infrared geometry and valid at low temperature limit. On the other hand, experimentally, the linear-$T$ r… ▽ More The linear-$T$ resistivity is one of the characteristic and universal properties of strange metals. There have been many progress in understanding it from holographic perspective (gauge/gravity duality). In most holographic models, the linear-$T$ resistivity is explained by the property of the infrared geometry and valid at low temperature limit. On the other hand, experimentally, the linear-$T$ resistivity is observed in a large range of temperatures, up to room temperature. By using holographic models related to the Gubser-Rocha model, we investigate how much the linear-$T$ resistivity is robust at higher temperature above the superconducting phase transition temperature. We find that strong momentum relaxation plays an important role to have a robust linear-$T$ resistivity up to high temperature. △ Less

Submitted 25 June, 2018; v1 submitted 20 June, 2018; originally announced June 2018.

Comments: 21 pages, 6 figures, v2: references added

Journal ref: J. High Energ. Phys. 2018, 191 (2018)

Mixed topological semimetals driven by orbital complexity in two-dimensional ferromagnets

Authors: Chengwang Niu, Jan-Philipp Hanke, Patrick M. Buhl, Hongbin Zhang, Lukasz Plucinski, Daniel Wortmann, Stefan Blügel, Gustav Bihlmayer, Yuriy Mokrousov

Abstract: The concepts of Weyl fermions and topological semimetals emerging in three-dimensional momentum space are extensively explored owing to the vast variety of exotic properties that they give rise to. On the other hand, very little is known about semimetallic states emerging in two-dimensional magnetic materials, which present the foundation for both present and future information technology. Here, w… ▽ More The concepts of Weyl fermions and topological semimetals emerging in three-dimensional momentum space are extensively explored owing to the vast variety of exotic properties that they give rise to. On the other hand, very little is known about semimetallic states emerging in two-dimensional magnetic materials, which present the foundation for both present and future information technology. Here, we demonstrate that including the magnetization direction into the topological analysis allows for a natural classification of topological semimetallic states that manifest in two-dimensional ferromagnets as a result of the interplay between spin-orbit and exchange interactions. We explore the emergence and stability of such mixed topological semimetals in realistic materials, and point out the perspectives of mixed topological states for current-induced orbital magnetism and current-induced domain wall motion. Our findings pave the way to understanding, engineering and utilizing topological semimetallic states in two-dimensional spin-orbit ferromagnets. △ Less

Submitted 18 July, 2019; v1 submitted 7 May, 2018; originally announced May 2018.

Journal ref: Nature Communications 10, 3179 (2019)

Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots

Authors: ** Liu, Kumarasiri Konthasinghe, Marcelo Davanco, John Lawall, Vikas Anant, Varun Verma, Richard Mirin, Sae Woo Nam, ** Dong Song, Ben Ma, Ze Sheng Chen, Hai Qiao Ni, Zhi Chuan Niu, Kartik Srinivasan

Abstract: Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optic… ▽ More Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth. △ Less

Submitted 26 October, 2017; originally announced October 2017.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Applied 9, 064019 (2018)

Thermal diffusivity and butterfly velocity in anisotropic Q-Lattice models

Authors: Du** Ahn, Yongjun Ahn, Hyun-Sik Jeong, Keun-Young Kim, Wei-Jia Li, Chao Niu

Abstract: By using a holographic method we study a relation between the thermal diffusivity ($D_T$) and two quantum chaotic properties, Lyapunov time ($τ_L$) and butterfly velocity ($v_B$) in strongly correlated systems. It has been shown that $D_T/(v_B^2 τ_L)$ is universal in some holographic models as well as condensed matter systems including the Sachdev-Ye-Kitaev (SYK) models. We investigate to what ext… ▽ More By using a holographic method we study a relation between the thermal diffusivity ($D_T$) and two quantum chaotic properties, Lyapunov time ($τ_L$) and butterfly velocity ($v_B$) in strongly correlated systems. It has been shown that $D_T/(v_B^2 τ_L)$ is universal in some holographic models as well as condensed matter systems including the Sachdev-Ye-Kitaev (SYK) models. We investigate to what extent this relation is universal in the Q-lattice models with infrared (IR) scaling geometry, focusing on the effect of spatial anisotropy. Indeed it was shown that $\mathcal{E}_i := D_{T,i}/(v_{B,i}^2 τ_L)$ ($i=x,y$) is determined only by some scaling exponents of the IR metric in the low temperature limit regardless of the matter fields and ultraviolet data. Inspired by this observation, in this work, we find the concrete expressions for $\mathcal{E}_i$ in terms of the critical dynamical exponents $z_i$ in each direction. By analyzing the IR scaling geometry we identify the allowed scaling parameter regimes, which enable us to compute the allowed range of $\mathcal{E}_i$. We find the lower bound of $\mathcal{E}_i$ is always $1/2$, which is not affected by anisotropy, contrary to the $η/s$ case. However, there may be an upper bound determined by anisotropy. △ Less

Submitted 10 September, 2017; v1 submitted 29 August, 2017; originally announced August 2017.

Comments: 32 pages, 1 figure, v2: 33 pages, references added

Journal ref: J. High Energ. Phys. 2018, 140 (2018)

Quantum spin Hall effect and topological phase transitions in honeycomb antiferromagnets

Authors: C. Niu, J. -P. Hanke, P. M. Buhl, G. Bihlmayer, D. Wortmann, S. Blügel, Y. Mokrousov

Abstract: While the quantum spin Hall (QSH) effect and antiferromagnetic order constitute two of the most promising phenomena for embedding basic spintronic concepts into future technologies, almost all of the QSH insulators known to date are non-magnetic. Here, based on tight-binding arguments and first-principles theory, we predict two-dimensional antiferromagnets with honeycomb lattice structure to exhib… ▽ More While the quantum spin Hall (QSH) effect and antiferromagnetic order constitute two of the most promising phenomena for embedding basic spintronic concepts into future technologies, almost all of the QSH insulators known to date are non-magnetic. Here, based on tight-binding arguments and first-principles theory, we predict two-dimensional antiferromagnets with honeycomb lattice structure to exhibit the QSH effect due to the combined symmetry of time reversal and spatial inversion. We identify functionalized Sn films as experimentally feasible examples which reveal large band gaps rendering these systems ideal for energy efficient spintronics applications. Remarkably, we discover that tensile strain can tune the magnetic order in these materials, accompanied by a topological phase transition from the QSH to the quantum anomalous Hall phase. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Comments: 5 pages, 3 figures

Diffusion and Butterfly Velocity at Finite Density

Authors: Keun-Young Kim, Chao Niu

Abstract: We study diffusion and butterfly velocity ($v_B$) in two holographic models, linear axion and axion-dilaton model, with a momentum relaxation parameter ($β$) at finite density or chemical potential ($μ$). Axion-dilaton model is particularly interesting since it shows linear-$T$-resistivity, which may have something to do with the universal bound of diffusion. At finite density, there are two diffu… ▽ More We study diffusion and butterfly velocity ($v_B$) in two holographic models, linear axion and axion-dilaton model, with a momentum relaxation parameter ($β$) at finite density or chemical potential ($μ$). Axion-dilaton model is particularly interesting since it shows linear-$T$-resistivity, which may have something to do with the universal bound of diffusion. At finite density, there are two diffusion constants $D_\pm$ describing the coupled diffusion of charge and energy. By computing $D_\pm$ exactly, we find that in the incoherent regime ($β/T \gg 1,\ β/μ\gg 1$) $D_+$ is identified with the charge diffusion constant ($D_c$) and $D_-$ is identified with the energy diffusion constant ($D_e$). In the coherent regime, at very small density, $D_\pm$ are `maximally' mixed in the sense that $D_+(D_-)$ is identified with $D_e(D_c)$, which is opposite to the case in the incoherent regime. In the incoherent regime $D_e \sim C_- \hbar v_B^2 / k_B T$ where $C_- = 1/2$ or 1 so it is universal independently of $β$ and $μ$. However, $D_c \sim C_+ \hbar v_B^2 / k_B T$ where $C_+ = 1$ or $ β^2/16π^2 T^2$ so, in general, $C_+$ may not saturate to the lower bound in the incoherent regime, which suggests that the characteristic velocity for charge diffusion may not be the butterfly velocity. We find that the finite density does not affect the diffusion property at zero density in the incoherent regime. △ Less

Submitted 23 April, 2017; v1 submitted 4 April, 2017; originally announced April 2017.

Comments: 24 pages, 6 figures, v2 minor edits and references added

Topological Nodal-line Semimetals in Two Dimensions with time-reversal symmetry breaking

Authors: Chengwang Niu, Patrick M. Buh, Hongbin Zhang, Gustav Bihlmayer, Daniel Wortmann, Stefan Blügel, Yuriy Mokrousov

Abstract: Topological nodal-line semimetals (TNLSs) exhibit exotic physical phenomena due to a one-dimensional (1D) band touching line, rather than discrete (Dirac or Weyl) points. While so far proposed two-dimensional (2D) TNLSs possess closed nodal lines (NLs) only when spin-orbit coupling (SOC) is neglected, here using Na$_3$Bi trilayers as an example, we show that 2D TNLSs can been obtained from topolog… ▽ More Topological nodal-line semimetals (TNLSs) exhibit exotic physical phenomena due to a one-dimensional (1D) band touching line, rather than discrete (Dirac or Weyl) points. While so far proposed two-dimensional (2D) TNLSs possess closed nodal lines (NLs) only when spin-orbit coupling (SOC) is neglected, here using Na$_3$Bi trilayers as an example, we show that 2D TNLSs can been obtained from topological (crystalline) insulators (TI/TCI) by time-reversal symmetry breaking even in the presence of SOC. We further reveal that these obtained NLs are protected by crystalline mirror symmetry, while a mirror symmetry breaking perturbation opens a full gap thus giving rise to a phase transition from 2D TNLS to a quantum anomalous Hall insulator (QAHI). We thereby uncover a close correlation between various topological phases. Remarkably, a strong spin Hall effect, important for transport applications, is predicted in 2D TNLS. Finally, a Na$_2$CrBi trilayer is proposed to realize the 2D TNLS without extrinsic magnetic field. Our work not only proposes a new strategy for realizing 2D TNLSs with truely closed NLs, but also reveals potential applications of TNLS in spintronics. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Two-dimensional topological nodal line semimetal in layered $X_2Y$ ($X$ = Ca, Sr, and Ba; $Y$ = As, Sb, and Bi)

Authors: Chengwang Niu, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Ying Dai, Stefan Blügel, Yuriy Mokrousov

Abstract: In topological semimetals the Dirac points can form zero-dimensional and one-dimensional manifolds, as predicted for Dirac/Weyl semimetals and topological nodal line semimetals, respectively. Here, based on first-principles calculations, we predict a topological nodal line semimetal phase in the two-dimensional compounds $X_2Y$ ($X$=Ca, Sr, and Ba; $Y$=As, Sb, and Bi) in the absence of spin-orbit… ▽ More In topological semimetals the Dirac points can form zero-dimensional and one-dimensional manifolds, as predicted for Dirac/Weyl semimetals and topological nodal line semimetals, respectively. Here, based on first-principles calculations, we predict a topological nodal line semimetal phase in the two-dimensional compounds $X_2Y$ ($X$=Ca, Sr, and Ba; $Y$=As, Sb, and Bi) in the absence of spin-orbit coupling (SOC) with a band inversion at the M point. The mirror symmetry as well as the electrostatic interaction, that can be engineered via strain, are responsible for the nontrivial phase. In addition, we demonstrate that the exotic edge states can be also obtained without and with SOC although a tiny gap appears at the nodal line for the bulk states when SOC is included. △ Less

Submitted 15 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 95, 235138 (2017)

Density-functional calculations of multivalency-driven formation of Te-based monolayer materials with superior electronic and optical properties

Authors: Zhili Zhu, Xiaolin Cai, Chunyao Niu, Seho Yi, Zhengxiao Guo, Feng Liu, Jun-Hyung Cho, Yu Jia, Zhenyu Zhang

Abstract: Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here wepredict a new category of 2D monolayers named tellurene, composed of the meta… ▽ More Contemporary science is witnessing a rapid expansion of the two-dimensional (2D) materials family, each member possessing intriguing emergent properties of fundamental and practical importance. Using the particle-swarm optimization method in combination with first-principles density functional theory calculations, here wepredict a new category of 2D monolayers named tellurene, composed of the metalloid element Te, with stable 1T-MoS2-like ( α-Te), and metastable tetragonal (\b{eta}-Te) and 2H-MoS2-like (γ-Te) structures. The underlying formation mechanism of such tri-layer arrangements is uniquely rooted in the multivalent nature of Te, with the central-layer Te behaving more metal-like (e.g., Mo), and the two outer layers more semiconductor-like (e.g.,S). In particular, the α-Te phase can be spontaneously obtained from the magic thicknesses truncated along the [001] direction of the trigonal structure of bulk Te. Furthermore, both the α- and \b{eta}-Te phases possess electron and hole mobilities much higher than MoS2, as well as salient optical absorption properties. These findings effectively extend the realm of 2D materials to group-VI monolayers, and provide a new and generic formation mechanism for designing 2D materials. △ Less

Submitted 30 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. Lett. 119, 106101 (2017)

Mixed Weyl semimetals and dissipationless magnetization control in insulators by spin-orbit torques

Authors: Jan-Philipp Hanke, Frank Freimuth, Chengwang Niu, Stefan Blügel, Yuriy Mokrousov

Abstract: Reliable and energy efficient magnetization switching by electrically-induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of spin-orbit torques and the related Dzyaloshinskii-Moriya interaction in topologically non-trivial magnetic insulators can exceed by far that of conventional met… ▽ More Reliable and energy efficient magnetization switching by electrically-induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of spin-orbit torques and the related Dzyaloshinskii-Moriya interaction in topologically non-trivial magnetic insulators can exceed by far that of conventional metallic magnets. In analogy to the quantum anomalous Hall effect, we explain this extraordinary response in absence of longitudinal currents as a hallmark of magnetic monopoles in the electronic structure of systems that are interpreted most naturally within the framework of mixed Weyl semimetals. We thereby launch the effect of spin-orbit torque into the field of topology and reveal its crucial role in mediating the topological phase transitions arising due to the complex interplay between magnetization direction and momentum-space topology. The concepts presented here may be exploited to understand and utilize magneto-electric coupling phenomena in insulating ferromagnets and antiferromagnets. △ Less

Submitted 27 April, 2017; v1 submitted 27 January, 2017; originally announced January 2017.

Comments: 9 pages (7 pages + 2 pages supplementary material)

Journal ref: Nature Communications 8, 1479 (2017)

Robust Dual Topological Character with Spin-Valley Polarization in a Monolayer of the Dirac Semimetal Na$_3$Bi

Authors: Chengwang Niu, Patrick M. Buhl, Gustav Bihlmayer, Daniel Wortmann, Ying Dai, Stefan Blügel, Yuriy Mokrousov

Abstract: Topological materials with both insulating and semimetal phases can be protected by crystalline (e.g. mirror) symmetry. The insulating phase, called topological crystalline insulator (TCI), has been intensively investigated and observed in three-dimensional materials. However, the predicted two-dimensional (2D) materials with TCI phase are explored much less than 3D TCIs and 2D topological insulat… ▽ More Topological materials with both insulating and semimetal phases can be protected by crystalline (e.g. mirror) symmetry. The insulating phase, called topological crystalline insulator (TCI), has been intensively investigated and observed in three-dimensional materials. However, the predicted two-dimensional (2D) materials with TCI phase are explored much less than 3D TCIs and 2D topological insulator, while so far considered 2D TCIs almost exclusively possess a square lattice structure with the mirror Chern number $\mathcal C_{M} =-2$. Here, we predict theoretically that hexagonal monolayer of Dirac semimetal Na$_3$Bi is a 2D TCI with a mirror Chern number $\mathcal C_{M} =-1$. The large nontrivial gap of 0.31 eV is tunable and can be made much larger via strain engineering while the topological phases are robust against strain, indicating a high possibility for room-temperature observation of quantized conductance. In addition, a nonzero spin Chern number $\mathcal C_{S} =-1$ is obtained, indicating the coexistence of 2D topological insulator and 2D TCI, i.e. the dual topological character. Remarkably, a spin-valley polarization is revealed in Na$_3$Bi monolayer due to the breaking of crystal inversion symmetry. The dual topological character is further explicitly confirmed via unusual edge states' behavior under corresponding symmetry breaking. △ Less

Submitted 25 January, 2017; originally announced January 2017.

Homes' law in Holographic Superconductor with Q-lattices

Authors: Keun-Young Kim, Chao Niu

Abstract: Homes' law, $ρ_s = C σ_{\mathrm{DC}} T_c$, is an empirical law satisfied by various superconductors with a material independent universal constant $C$, where $ρ_{s}$ is the superfluid density at zero temperature, $T_c$ is the critical temperature, and $σ_{\mathrm{DC}}$ is the electric DC conductivity in the normal state close to $T_c$. We study Homes' law in holographic superconductor with Q-latti… ▽ More Homes' law, $ρ_s = C σ_{\mathrm{DC}} T_c$, is an empirical law satisfied by various superconductors with a material independent universal constant $C$, where $ρ_{s}$ is the superfluid density at zero temperature, $T_c$ is the critical temperature, and $σ_{\mathrm{DC}}$ is the electric DC conductivity in the normal state close to $T_c$. We study Homes' law in holographic superconductor with Q-lattices and find that Homes' law is realized for some parameter regime in insulating phase near the metal-insulator transition boundary, where momentum relaxation is strong. In computing the superfluid density, we employ two methods: one is related to the infinite DC conductivity and the other is related to the magnetic penetration depth. With finite momentum relaxation both yield the same results, while without momentum relaxation only the latter gives the superfluid density correctly because the former has a spurious contribution from the infinite DC conductivity due to translation invariance. △ Less

Submitted 16 August, 2016; originally announced August 2016.

Comments: 10 pages, 8 figurs

Tellurene-a monolayer of tellurium from first-principles prediction

Authors: Z. Zhu, C. Cai, C. Niu, C. Wang, Q. Sun, X. Han, Z. Guo, Y. Jia

Abstract: A two dimensional (2D) Group-VI Te monolayer, tellurene, is predicted by using the first-principles calculations, which consists of planner four-membered and chair-like six-membered rings arranged alternately in a 2D lattice. The phonon spectra calculations, combined with ab initio molecular dynamics (MD) simulations, demonstrate that tellurene is kinetically very stable. The tellurene shows a des… ▽ More A two dimensional (2D) Group-VI Te monolayer, tellurene, is predicted by using the first-principles calculations, which consists of planner four-membered and chair-like six-membered rings arranged alternately in a 2D lattice. The phonon spectra calculations, combined with ab initio molecular dynamics (MD) simulations, demonstrate that tellurene is kinetically very stable. The tellurene shows a desirable direct band gap of 1.04 eV and its band structure can be effectively tuned by strain. The effective mass calculations imply that tellurene should also exhibit a relatively high carrier mobility, e.g. compared with MoS2. The significant direct band gap and the high carrier mobility imply that tellurene is a very promising candidate for a new generation of nanoelectronic devices. △ Less

Submitted 10 May, 2016; originally announced May 2016.

Comments: -

$\mbox{Bi}_{1}\mbox{Te}_{1}$: a dual topological insulator

Authors: Markus Eschbach, Martin Lanius, Chengwang Niu, Ewa Młyńczak, Pika Gospodarič, Jens Kellner, Peter Schüffelgen, Mathias Gehlmann, Sven Döring, Elmar Neumann, Martina Luysberg, Gregor Mussler, Lukasz Plucinski, Markus Morgenstern, Detlev Grützmacher, Gustav Bihlmayer, Stefan Blügel, Claus M. Schneider

Abstract: A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non t… ▽ More A combined theoretical and experimental study reveals evidence for the dual topological insulating character of the stoichiometric natural superlattice phase $\mathrm{Bi_{1}Te_{1}}=\mathrm{[Bi_{2}]_{1}[Bi_{2}Te_{3}]_{2}}$, being a stack of alternating Bi bilayers and two quintuple layers of $\mathrm{Bi_{2}Te_{3}}$. We identify $\mathrm{Bi_{1}Te_{1}}$ by density functional theory to exhibit a non trivial time-reversal symmetry-driven character of $\mathbb{Z}_{2}=(0;001)$ and additionally a mirror-symmetry induced mirror Chern number of $n_{\cal M}=-2$, which indicates that $\mathrm{Bi_{1}Te_{1}}$ is both a weak topological insulator and a topological crystalline insulator. The coexistence of the two phenomena preordains distinct crystal planes to host topological surface states that are protected by the respective symmetries. The surface perpendicular to the stacking direction is the 'dark' surface of the weak topological insulator, while hosting mirror-symmetry protected surface states along the $\bar{Γ\mathrm{M}}$ direction at non-time-reversal invariant momenta points. We confirm the stacking sequence of our MBE-grown $\mathrm{Bi_{1}Te_{1}}$ thin films by X-ray diffraction and transmission electron microscopy, and find indications of the topological crystalline and weak topological character in the surface electronic spin structure by spin- and angle-resolved photoemission spectroscopy, which nicely match the results from density functional theory. △ Less

Submitted 29 April, 2016; originally announced April 2016.

Origin of Symmetric Dimer Images of Si(001) Observed in Low-Temperature STM

Authors: Xiao-Yan Ren, Hyun-Jung Kim, Chun-Yao Niu, Yu Jia, Jun-Hyung Cho

Abstract: It has been a long-standing puzzle why buckled dimers of the Si(001) surface appeared symmetric below 20 K in scanning tunneling microscopy (STM) experiments. Although such symmetric dimer images were concluded to be due to an artifact induced by STM measurements, its underlying mechanism is still veiled. Here,we demonstrate, based on a first-principles density-functional theory calculation, that… ▽ More It has been a long-standing puzzle why buckled dimers of the Si(001) surface appeared symmetric below 20 K in scanning tunneling microscopy (STM) experiments. Although such symmetric dimer images were concluded to be due to an artifact induced by STM measurements, its underlying mechanism is still veiled. Here,we demonstrate, based on a first-principles density-functional theory calculation, that the symmetric dimer images are originated from the flip-flop motion of buckled dimers, driven by quantum tunneling (QT). It is revealed that at low temperature the tunneling-induced surface charging with holes reduces the energy barrier for the flip** of buckled dimers, thereby giving rise to a sizable QT-driven frequency of the flip-flop motion. However, such a QT phenomenon becomes marginal in the tunneling-induced surface charging with electrons. Our findings provide an explanation for low-temperature STM data that exhibits apparent symmetric (buckled) dimer structure in the filled-state (empty-state) images. △ Less

Submitted 19 October, 2015; originally announced October 2015.

Comments: 5 pages,4 figures

Journal ref: Sci. Rep. 6, 27868 (2016)

Atomically thin binary V-V compound semiconductor: a first-principles study

Authors: Weiyang Yu, Zhili Zhu, Chun-Yao Niu, Xiaolin Cai, Wei-Bing Zhang

Abstract: Searching the novel 2D semiconductor is crucial to develop the next-generation low-dimensional electronic device. Using first-principles calculations, we propose a class of unexplored binary V-V compound semiconductor (PN, AsN, SbN, AsP, SbP and SbAs) with monolayer black phosphorene ($α$) and blue phosphorene ($β$) structure. Our phonon spectra and room-temperature molecular dynamics (MD) calcula… ▽ More Searching the novel 2D semiconductor is crucial to develop the next-generation low-dimensional electronic device. Using first-principles calculations, we propose a class of unexplored binary V-V compound semiconductor (PN, AsN, SbN, AsP, SbP and SbAs) with monolayer black phosphorene ($α$) and blue phosphorene ($β$) structure. Our phonon spectra and room-temperature molecular dynamics (MD) calculations indicate that all compounds are very stable. Moreover, most of compounds are found to present a moderate energy gap in the visible frequency range, which can be tuned gradually by in-plane strain. Especially, $α$-phase V-V compounds have a direct gap while $β$-SbN, AsN, SbP, and SbAs may be promising candidates of 2D solar cell materials due to a wide gap separating acoustic and optical phonon modes. Furthermore, vertical heterostructures can be also built using lattice matched $α$($β$)-SbN and phosphorene, and both vdW heterostructures are found to have intriguing direct band gap. The present investigation not only broads the scope of layered group V semiconductors but also provides an unprecedented route for the potential applications of 2D V-V families in optoelectronic and nanoelectronic semiconductor devices. △ Less

Submitted 5 April, 2016; v1 submitted 13 October, 2015; originally announced October 2015.

Comments: 7 pages, 7 figures

Journal ref: J. Mater. Chem. C, 2016

Second-order correlation function from asymmetric to symmetric transitions due to spectrally indistinguishable biexciton cascade emission

Authors: X. F. Wu, X. M. Dou, K. Ding, P. Y. Zhou, H. Q. Ni, Z. C. Niu, H. J. Zhu, D. S. Jiang, C. L. Zhao, B. Q. Sun

Abstract: We report the observed photon bunching statistics of biexciton cascade emission at zero time delay in single quantum dots by second-order correlation function measurements under continuous wave excitation. It is found that the bunching phenomenon is independent of the biexciton binding energy when it varies from 0.59 meV to nearly zero. The photon bunching takes place when the exciton photon is no… ▽ More We report the observed photon bunching statistics of biexciton cascade emission at zero time delay in single quantum dots by second-order correlation function measurements under continuous wave excitation. It is found that the bunching phenomenon is independent of the biexciton binding energy when it varies from 0.59 meV to nearly zero. The photon bunching takes place when the exciton photon is not spectrally distinguishable from biexciton photon, and either of them can trigger the start in a Hanbury-Brown and Twiss setup. However, if the exciton energy is spectrally distinguishable from the biexciton the photon statistics becomes asymmetric and a cross-bunching lineshape is obtained. The theoretical calculations based on a model of three-level rate-equation analysis are consistent with the result of second-order correlation function measurements. △ Less

Submitted 22 September, 2015; originally announced September 2015.

Generation and Detection of Surface Plasmon Polaritons by Transition Metal Dichalcogenides for Chip-level Electronic-Photonic Integrated Circuits

Authors: Zhuan Zhu, Jiangtan Yuan, Haiqing Zhou, Jonathan Hu, **g Zhang, Chengli Wei, Fang Yu, Shuo Chen, Yucheng Lan, Yao Yang, Yanan Wang, Chao Niu, Zhifeng Ren, Jun Lou, Zhiming Wang, Jiming Bao

Abstract: The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication at nanometer scales. A major challenge to this integration is the identification of a suitable material. After discussing the material aspect of the challenge,… ▽ More The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication at nanometer scales. A major challenge to this integration is the identification of a suitable material. After discussing the material aspect of the challenge, we identified atomically thin transition metal dichalcogenides (TMDs) as a perfect material platform to implement the circuit. The selection of TMDs is based on their very distinct property: monolayer TMDs are able to emit and absorb light at the same wavelength determined by direct exciton transitions. To prove the concept, we fabricated simple devices consisting of silver nanowires as plasmonic waveguides and monolayer TMDs as active optoelectronic media. Using photoexcitation, direct optical imaging and spectral analysis, we demonstrated generation and detection of surface plasmon polaritons by monolayer TMDs. Regarded as novel materials for electronics and photonics, transition metal dichalcogenides are expected to find new applications in next generation integrated circuits. △ Less

Submitted 22 May, 2016; v1 submitted 7 July, 2015; originally announced July 2015.

Journal ref: ACS Photonics 3 (2016) 869-874

Dilute magnetic semiconductor and half metal behaviors in 3d transition-metal doped black and blue phosphorenes: a first-principles study

Authors: Weiyang Yu, Zhili Zhu, Chun-Yao Niu, Chong Li, Jun-Hyung Cho, Yu Jia

Abstract: We present first-principles density-functional calculations for the structural, electronic, and magnetic properties of substitutional 3d transition metal (TM) impurities in two-dimensional black and blue phosphorenes. We find that the magnetic properties of such substitutional impurities can be understood in terms of a simple model based on the Hund's rule. The TM-doped black phosphorenes with Ti,… ▽ More We present first-principles density-functional calculations for the structural, electronic, and magnetic properties of substitutional 3d transition metal (TM) impurities in two-dimensional black and blue phosphorenes. We find that the magnetic properties of such substitutional impurities can be understood in terms of a simple model based on the Hund's rule. The TM-doped black phosphorenes with Ti, V, Cr, Mn, Fe and Ni impurities show dilute magnetic semiconductor (DMS) properties while those with Sc and Co impurities show nonmagnetic properties. On the other hand, the TM-doped blue phosphorenes with V, Cr, Mn and Fe impurities show DMS properties, those with Ti and Ni impurities show half-metal properties, whereas Sc and Co doped systems show nonmagnetic properties. We identify two different regimes depending on the occupation of the hybridized electronic states of TM and phosphorous atoms: (i) bonding states are completely empty or filled for Sc- and Co-doped black and blue phosphorenes, leading to non-magnetic; (ii) non-bonding d states are partially occupied for Ti-, V-, Cr-, Mn-, Fe- and Ni-doped black and blue phosphorenes, giving rise to large and localized spin moments. These results provide a new route for the potential applications of dilute magnetic semiconductor and half-metal in spintronic devices by employing black and blue phosphorenes. △ Less

Submitted 26 September, 2015; v1 submitted 7 April, 2015; originally announced April 2015.

Comments: 9 pages, 7 figures

Journal ref: Nanoscale Research Letters (2016) 11:77

Topological Crystalline Insulator and Quantum Anomalous Hall States in IV-VI based Monolayers and their Quantum Wells

Authors: C. Niu, P. M. Buhl, G. Bihlmayer, D. Wortmann, S. Blugel, Y. Mokrousov

Abstract: Different from the two-dimensional (2D) topological insulator, the 2D topological crystalline insulator (TCI) phase disappears when the mirror symmetry is broken, e.g., upon placing on a substrate. Here, based on a new family of 2D TCIs - SnTe and PbTe monolayers - we theoretically predict the realization of the quantum anomalous Hall effect with Chern number C = 2 even when the mirror symmetry is… ▽ More Different from the two-dimensional (2D) topological insulator, the 2D topological crystalline insulator (TCI) phase disappears when the mirror symmetry is broken, e.g., upon placing on a substrate. Here, based on a new family of 2D TCIs - SnTe and PbTe monolayers - we theoretically predict the realization of the quantum anomalous Hall effect with Chern number C = 2 even when the mirror symmetry is broken. Remarkably, we also demonstrate that the considered materials retain their large-gap topological properties in quantum well structures obtained by sandwiching the monolayers between NaCl layers. Our results demonstrate that the TCIs can serve as a seed for observing robust topologically non-trivial phases. △ Less

Submitted 6 March, 2015; originally announced March 2015.

Comments: 5 pages, submitted on 27th Feb 2015

Holographic Entanglement Entropy Close to Quantum Phase Transitions

Authors: Yi Ling, Peng Liu, Chao Niu, Jian-Pin Wu, Zhuo-Yu Xian

Abstract: We investigate the holographic entanglement entropy (HEE) of a strip geometry in four dimensional Q-lattice backgrounds, which exhibit metal-insulator transitions in the dual field theory. Remarkably, we find that the HEE always displays a peak in the vicinity of the quantum critical points. Our model provides the first direct evidence that the HEE can be used to characterize the quantum phase tra… ▽ More We investigate the holographic entanglement entropy (HEE) of a strip geometry in four dimensional Q-lattice backgrounds, which exhibit metal-insulator transitions in the dual field theory. Remarkably, we find that the HEE always displays a peak in the vicinity of the quantum critical points. Our model provides the first direct evidence that the HEE can be used to characterize the quantum phase transition (QPT). We also conjecture that the maximization behavior of HEE at quantum critical points would be universal in general holographic models. △ Less

Submitted 25 April, 2016; v1 submitted 12 February, 2015; originally announced February 2015.

Comments: 10 pages, 4 figures

Journal ref: JHEP04(2016)114

Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers

Authors: Yandong Ma, Liangzhi Kou, Binghai Yan, Chengwang Niu, Ying Dai, Thomas Heine

Abstract: The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extra… ▽ More The search for inversion asymmetric topological insulators (IATIs) persists as an effect for realizing new topological phenomena. However, so for only a few IATIs have been discovered and there is no IATI exhibiting a large band gap exceeding 0.6 eV. Using first-principles calculations, we predict a series of new IATIs in saturated Group III-Bi bilayers. We show that all these IATIs preserve extraordinary large bulk band gaps which are well above room-temperature, allowing for viable applications in room-temperature spintronic devices. More importantly, most of these systems display large bulk band gaps that far exceed 0.6 eV and, part of them even are up to ~1 eV, which are larger than any IATIs ever reported. The nontrivial topological situation in these systems is confirmed by the identified band inversion of the band structures and an explicit demonstration of the topological edge states. Interestingly, the nontrivial band order characteristics are intrinsic to most of these materials and are not subject to spin-orbit coupling. Owning to their asymmetric structures, remarkable Rashba spin splitting is produced in both the valence and conduction bands of these systems. These predictions strongly revive these new systems as excellent candidates for IATI-based novel applications. △ Less

Submitted 28 January, 2015; originally announced January 2015.

Comments: 17 pages,5figures

Journal ref: Phys. Rev. B 91, 235306 (2015)

Holographic Thermal Relaxation in Superfluid Turbulence

Authors: Yiqiang Du, Chao Niu, Yu Tian, Hongbao Zhang

Abstract: Holographic duality provides a first-principles approach to investigate real time processes in quantum many-body systems, in particular at finite temperature and far-from-equilibrium. We use this approach to study the dynamical evolution of vortex number in a two-dimensional (2D) turbulent superfluid through numerically solving its gravity dual. We find that the temporal evolution of the vortex nu… ▽ More Holographic duality provides a first-principles approach to investigate real time processes in quantum many-body systems, in particular at finite temperature and far-from-equilibrium. We use this approach to study the dynamical evolution of vortex number in a two-dimensional (2D) turbulent superfluid through numerically solving its gravity dual. We find that the temporal evolution of the vortex number can be well fit statistically by two-body decay due to the vortex pair annihilation featured relaxation process, thus confirm the previous suspicion based on the experimental data for turbulent superfluid in highly oblate Bose-Einstein condensates. Furthermore, the decay rate near the critical temperature is in good agreement with the recently developed effective theory of 2D superfluid turbulence. △ Less

Submitted 8 December, 2015; v1 submitted 29 December, 2014; originally announced December 2014.

Comments: 14 pages, version to appear in JHEP. Movies available at http://people.ucas.ac.cn/~ytian?language=en#171556

Journal ref: JHEP 12(2015)018

Functionalized Bismuth Films: Giant Gap Quantum Spin Hall and Valley-Polarized Quantum Anomalous Hall States

Authors: Chengwang Niu, Gustav Bihlmayer, Hongbin Zhang, Daniel Wortmann, Stefan Blugel, Yuriy Mokrousov

Abstract: The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies both in the large spin-or… ▽ More The search for new large band gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is critical for their realistic applications at room temperature. Here we predict, based on first principles calculations, that the band gap of QSH and QAH states can be as large as 1.01 eV and 0.35 eV in an H-decorated Bi(111) film. The origin of this giant band gap lies both in the large spin-orbit interaction of Bi and the H-mediated exceptional electronic and structural properties. Moreover, we find that the QAH state also possesses the properties of quantum valley Hall state, thus intrinsically realising the so-called valley-polarized QAH effect. We further investigate the realization of large gap QSH and QAH states in an H-decorated Bi(\={1}10) film and X-decorated (X=F, Cl, Br, and I) Bi(111) films. △ Less

Submitted 4 December, 2014; originally announced December 2014.

Comments: submitted to Physical Reveiw Letters on 25th of September 2014

Anomalous do** effect in black phosphorene from first-principles calculations

Authors: Weiyang Yu, Zhili Zhu, Chun-Yao Niu, Chong Li, Jun-Hyung Cho, Yu Jia

Abstract: Using first-principles density functional theory calculations, we investigate the geometries, electronic structures, and thermodynamic stabilities of substitutionally doped phosphorene sheets with group III, IV, V, and VI elements. We find that the electronic properties of phosphorene are drastically modified by the number of valence electrons in dopant atoms. The dopants with even number of valen… ▽ More Using first-principles density functional theory calculations, we investigate the geometries, electronic structures, and thermodynamic stabilities of substitutionally doped phosphorene sheets with group III, IV, V, and VI elements. We find that the electronic properties of phosphorene are drastically modified by the number of valence electrons in dopant atoms. The dopants with even number of valence electrons enable the doped phosphorenes to have a metallic feature, while the dopants with odd number of valence electrons keep the semiconducting feature with a larger band gap than the undoped phosphorene. This even-odd behavior is attributed to the peculiar bonding characteristics of phosphorene and the strong hybridization of sp orbitals between dopants and phosphorene. The calculated formation energies of various substitutional dopants in phosphorene show that such doped systems can be thermodynamically stable. △ Less

Submitted 21 May, 2015; v1 submitted 23 November, 2014; originally announced November 2014.

Comments: 8 pages, 9 figures, 34 conferences. Physical Chemistry Chemical Physics, 2015, DOI: 10.1039/C5CP01732G

Journal ref: Phys.Chem.Chem.Phys., 2015, 17, 16351

Holographic Superconductor on Q-lattice

Authors: Yi Ling, Peng Liu, Chao Niu, Jian-Pin Wu, Zhuo-Yu Xian

Abstract: We construct the simplest gravitational dual model of a superconductor on Q-lattices. We analyze the condition for the existence of a critical temperature at which the charged scalar field will condense. In contrast to the holographic superconductor on ionic lattices, the presence of Q-lattices will suppress the condensate of the scalar field and lower the critical temperature. In particular, when… ▽ More We construct the simplest gravitational dual model of a superconductor on Q-lattices. We analyze the condition for the existence of a critical temperature at which the charged scalar field will condense. In contrast to the holographic superconductor on ionic lattices, the presence of Q-lattices will suppress the condensate of the scalar field and lower the critical temperature. In particular, when the Q-lattice background is dual to a deep insulating phase, the condensation would never occur for some small charges. Furthermore, we numerically compute the optical conductivity in the superconducting regime. It turns out that the presence of Q-lattice does not remove the pole in the imaginary part of the conductivity, ensuring the appearance of a delta function in the real part. We also evaluate the gap which in general depends on the charge of the scalar field as well as the Q-lattice parameters. Nevertheless, when the charge of the scalar field is relatively large and approaches the probe limit, the gap becomes universal with $ω_g \simeq 9T_c$ which is consistent with the result for conventional holographic superconductors. △ Less

Submitted 15 February, 2015; v1 submitted 24 October, 2014; originally announced October 2014.

Comments: 20 pages, version to appear in JHEP

Journal ref: JHEP02(2015)059

Controllable spin-orbit coupling and its influence on the upper critical field in the chemically doped quasi-one-dimensional Nb$_2$PdS$_5$ superconductor

Authors: N. Zhou, Xiaofeng Xu, J. R. Wang, J. H. Yang, Y. K. Li, Y. Guo, W. Z. Yang, C. Q. Niu, Bin Chen, Chao Cao, Jianhui Dai

Abstract: By systematic chemical substitution of Pt and Ni in the newly-discovered superconductor Nb$_2$PdS$_5$ ($T_c\sim$6 K), we study the evolution of its superconducting properties with do**, focussing on the behavior of the upper critical field $H_{c2}$. In contrast to the previous results of Se do** on S sites, superconductivity is found to be rather robust against the Pt and Ni dopants on the one… ▽ More By systematic chemical substitution of Pt and Ni in the newly-discovered superconductor Nb$_2$PdS$_5$ ($T_c\sim$6 K), we study the evolution of its superconducting properties with do**, focussing on the behavior of the upper critical field $H_{c2}$. In contrast to the previous results of Se do** on S sites, superconductivity is found to be rather robust against the Pt and Ni dopants on the one-dimensional Pd chains. Most strikingly, the reduced $H_{c2}$, i.e., the ratio of $H_{c2}/T_c$, is seen to be significantly enhanced by the heavier Pt do** but suppressed in the Ni-doped counterparts, distinct from the nearly constant value in the Se doped samples. Our findings therefore suggest that the upper critical field of this system can be modified in a tunable fashion by chemical do** on the Pd chains with elements of varying mass numbers. The spin-orbit coupling on the Pd sites, by inference, should play an important role in the observed superconductivity and on the large upper critical field beyond the Pauli pair-breaking field. △ Less

Submitted 30 September, 2014; originally announced October 2014.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 90, 094520 (2014)

Direct observation of charge mediated lattice distortions in complex oxide solid solutions

Authors: Xiahan Sang, Everett D. Grimley, Changning Niu, Douglas L. Irving, James M. LeBeau

Abstract: Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced… ▽ More Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced imaging methods, we observed atom column specific, picometer-scale displacements induced by local chemistry in a complex oxide solid solution. Displacements predicted from density functional theory were found to correlate with the observed experimental trends. Further analysis of bonding and charge distribution were used to clarify the mechanisms responsible for the detected structural behavior. By extending the experimental electron microscopy measurements to previously inaccessible length scales, we identified correlated atomic displacements linked to bond differences within the complex oxide structure. △ Less

Submitted 15 September, 2014; originally announced September 2014.

Comments: 11 pages, 3 figures