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Observation of in-plane anomalous Hall effect associated with orbital magnetization
Authors:
Ayano Nakamura,
Shinichi Nishihaya,
Hiroaki Ishizuka,
Markus Kriener,
Yuto Watanabe,
Masaki Uchida
Abstract:
For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even in-plane magnetic field can induce anomalous Hall effect, but its experimental demonstration has remained difficult due to i…
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For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even in-plane magnetic field can induce anomalous Hall effect, but its experimental demonstration has remained difficult due to its potentially small magnitude and strict symmetry requirements. Here we report observation of the in-plane anomalous Hall effect by measuring low-carrier density films of magnetic Weyl semimetal EuCd$_2$Sb$_2$. Anomalous Hall resistance exhibits distinct three-fold rotational symmetry for changes in the in-plane field component, and this can be understood in terms of out-of-plane Weyl points splitting or orbital magnetization induced by in-plane field, as also confirmed by model calculation. Our findings demonstrate the importance of in-plane field to control the Hall effect, accelerating materials development and further exploration of various in-plane field induced phenomena.
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Submitted 26 May, 2024;
originally announced May 2024.
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Magnetic structure of EuCd$_2$Sb$_2$ single-crystal thin-film
Authors:
Eliot Heinrich,
Ayano Nakamura,
Shinichi Nishihaya,
Eugen Weschke,
Henrik Rønnow,
Masaki Uchida,
Benedetta Flebus,
Jian-Rui Soh
Abstract:
We investigate the magnetic order in single crystalline EuCd$_2$Sb$_2$ thin films using a combined theoretical and experimental approach. Resonant elastic x-ray scattering experiments reveal a sharp magnetic peak at $q = (0, 0, \frac{1}{2})$ below $T_N = 7.2$ K, indicative of interlayer antiferromagnetic ordering. Additionally, we observe a weak diffuse magnetic signal centered at $q = (0, 0, 1)$…
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We investigate the magnetic order in single crystalline EuCd$_2$Sb$_2$ thin films using a combined theoretical and experimental approach. Resonant elastic x-ray scattering experiments reveal a sharp magnetic peak at $q = (0, 0, \frac{1}{2})$ below $T_N = 7.2$ K, indicative of interlayer antiferromagnetic ordering. Additionally, we observe a weak diffuse magnetic signal centered at $q = (0, 0, 1)$ that persists above $T_N$, up to $T_C \sim 11$ K. Our Monte-Carlo simulations of a classical spin model approximation of the Eu magnetic sublattice demonstrate that the diffuse signal can arise from ferromagnetic coupling in the top few layers due to surface oxidation. On the other hand, the bulk of the sample exhibits antiferromagnetic coupling between layers. Finally, our fit of the model parameters to the magnetic ordering temperatures, shed light on the exchange couplings that are key in stabilizing the observed composite magnetic order.
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Submitted 22 May, 2024;
originally announced May 2024.
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Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films
Authors:
Ren Oshima,
Tatsuto Hatanaka,
Shinichi Nishihaya,
Takuya Nomoto,
Markus Kriener,
Takahiro C. Fujita,
Masashi Kawasaki,
Ryotaro Arita,
Masaki Uchida
Abstract:
Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique qu…
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Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique quantum phase related to metamagnetism in bulk systems did not progress well. Here we report the fabrication of high-quality Sr$_3$Ru$_2$O$_7$ thin films by oxide MBE and the observation of a strain-induced ferromagnetic ground state. The change in magnetic exchange coupling evaluated by first-principles calculations indicates a systematic relation between the compression of the $c$-axis length and induced ferromagnetism. Giant epitaxial strain in high-quality films will be a key to a comprehensive understanding of the magnetism in Ruddlesden-Popper strontium ruthenates Sr$_{n+1}$Ru$_n$O$_{3n+1}$, which sensitively depends on the ratio of in-plane to out-of-plane Ru-Ru distances.
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Submitted 29 March, 2024;
originally announced April 2024.
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Berry curvature derived negative magnetoconductivity observed in type-II magnetic Weyl semimetal films
Authors:
Ayano Nakamura,
Shinichi Nishihaya,
Hiroaki Ishizuka,
Markus Kriener,
Mizuki Ohno,
Yuto Watanabe,
Masashi Kawasaki,
Masaki Uchida
Abstract:
Here we study nonmonotonic features which appear both in magnetoresistivity and anomalous Hall resistivity during the simple magnetization process, by systematically measuring type-II magnetic Weyl semimetal EuCd$_2$Sb$_2$ films over a wide carrier density range. We find that a positive magnetoresistivity hump can be explained as manifestation of a field-linear term in the generalized magnetocondu…
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Here we study nonmonotonic features which appear both in magnetoresistivity and anomalous Hall resistivity during the simple magnetization process, by systematically measuring type-II magnetic Weyl semimetal EuCd$_2$Sb$_2$ films over a wide carrier density range. We find that a positive magnetoresistivity hump can be explained as manifestation of a field-linear term in the generalized magnetoconductivity formula including the Berry curvature. As also confirmed by model calculation, the term can be negative and pronounced near the Weyl point energy in the case that the Weyl cones are heavily tilted. Our findings demonstrate extensive effects of the Berry curvature on various magnetotransport in magnetic Weyl semimetals beyond the anomalous Hall effect.
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Submitted 14 March, 2024;
originally announced March 2024.
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Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy
Authors:
Aaron N. Engel,
Paul J. Corbae,
Hadass S. Inbar,
Connor P. Dempsey,
Shinichi Nishihaya,
Wilson Yánez-Parreño,
Yuhao Chang,
Jason T. Dong,
Alexei V. Fedorov,
Makoto Hashimoto,
Donghui Lu,
Christopher J. Palmstrøm
Abstract:
The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investig…
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The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investigate the bulk and surface electronic structure of $α$-Sn thin films on InSb(001) grown by molecular beam epitaxy. We find that there is no significant war** in the shapes of the bulk bands. We also observe the presence of only two surface states near the valence band maximum in both thin (13 bilayer) and thick (400 bilayer) films. In 50 bilayer films, these two surface states coexist with quantum well states. Surprisingly, both of these surface states are spin-polarized with orthogonal spin-momentum locking and opposite helicities. One of these states is the spin-polarized topological surface state and the other a spin resonance. Finally, the presence of another orthogonal spin-momentum locked topological surface state from a secondary band inversion is verified. Our work clarifies the electronic structure of $α$-Sn(001) such that better control of the electronic properties can be achieved. In addition, the presence of two spin-polarized surface states near the valence band maximum has important ramifications for the use of $α$-Sn in spintronics.
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Submitted 1 March, 2024;
originally announced March 2024.
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Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 films
Authors:
Shinichi Nishihaya,
Ayano Nakamura,
Mizuki Ohno,
Markus Kriener,
Yuto Watanabe,
Masashi Kawasaki,
Masaki Uchida
Abstract:
Searching for an ideal magnetic Weyl semimetal hosting only a single pair of Weyl points has been a focal point for systematic clarification of its unique magnetotransport derived from the interplay between topology and magnetization. Among the candidates, triangular-lattice antiferromagnet EuCd$_2$As$_2$ has been attracting special attention due to the prediction of the ideal Weyl semimetal phase…
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Searching for an ideal magnetic Weyl semimetal hosting only a single pair of Weyl points has been a focal point for systematic clarification of its unique magnetotransport derived from the interplay between topology and magnetization. Among the candidates, triangular-lattice antiferromagnet EuCd$_2$As$_2$ has been attracting special attention due to the prediction of the ideal Weyl semimetal phase in the ferromagnetic state, however, transport properties of low-carrier density samples have remained elusive. Here we report molecular beam epitaxy growth of EuCd$_2$As$_2$ films, achieving low-hole density in the range of $10^{15}$-$10^{16}$ cm$^{-3}$ at low temperature. Transport measurements of such low-carrier density films reveal an insulating behavior with an activation gap of about 200 meV, which persists even in the field-induced ferromagnetic state. Our work provides an important experimental clue that EuCd$_2$As$_2$ is intrinsically insulating, contrary to the previous prediction.
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Submitted 3 January, 2024;
originally announced January 2024.
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Edge and bulk states in Weyl-orbit quantum Hall effect as studied by Corbino measurements
Authors:
Yusuke Nakazawa,
Ryosuke Kurihara,
Masatoshi Miyazawa,
Shinichi Nishihaya,
Markus Kriener,
Masashi Tokunaga,
Masashi Kawasaki,
Masaki Uchida
Abstract:
We investigate edge and bulk states in Weyl-orbit based quantum Hall effect by measuring a Corbino-type device fabricated from a topological Dirac semimetal (Cd1-xZnx)3As2 film. Clear quantum Hall plateaus are observed when measuring one-sided terminals of the Corbino-type device. This indicates that edge states of the Weyl-orbit quantum Hall effect form closed trajectories consisting of Fermi arc…
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We investigate edge and bulk states in Weyl-orbit based quantum Hall effect by measuring a Corbino-type device fabricated from a topological Dirac semimetal (Cd1-xZnx)3As2 film. Clear quantum Hall plateaus are observed when measuring one-sided terminals of the Corbino-type device. This indicates that edge states of the Weyl-orbit quantum Hall effect form closed trajectories consisting of Fermi arcs and chiral zero modes independently on inner and outer sides. On the other hand, the bulk resistance does not diverge at fields where the quantum Hall plateau appears, suggesting that the Weyl orbits in the bulk region are not completely localized when applying electric current through the bulk region.
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Submitted 30 December, 2023;
originally announced January 2024.
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Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)
Authors:
Aaron N. Engel,
Connor P. Dempsey,
Hadass S. Inbar,
Jason T. Dong,
Shinichi Nishihaya,
Yu Hao Chang,
Alexei V. Fedorov,
Makoto Hashimoto,
Donghui Lu,
Christopher J. Palmstrøm
Abstract:
$α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α…
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$α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $α$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk do** or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response.
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Submitted 29 November, 2023; v1 submitted 27 November, 2023;
originally announced November 2023.
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Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films
Authors:
Hadass S. Inbar,
Muhammad Zubair,
Jason T. Dong,
Aaron N Engel,
Connor P. Dempsey,
Yu Hao Chang,
Shinichi Nishihaya,
Shoaib Khalid,
Alexei V. Fedorov,
Anderson Janotti,
Chris J. Palmstrøm
Abstract:
Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth an…
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Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials.
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Submitted 16 May, 2023; v1 submitted 1 February, 2023;
originally announced February 2023.
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Tuning the Band Topology of GdSb by Epitaxial Strain
Authors:
Hadass S. Inbar,
Dai Q. Ho,
Shouvik Chatterjee,
Aaron N. Engel,
Shoaib Khalid,
Connor P. Dempsey,
Mihir Pendharkar,
Yu Hao Chang,
Shinichi Nishihaya,
Alexei V. Fedorov,
Donghui Lu,
Makoto Hashimoto,
Dan Read,
Anderson Janotti,
Christopher J. Palmstrøm
Abstract:
Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in b…
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Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.
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Submitted 18 April, 2023; v1 submitted 28 November, 2022;
originally announced November 2022.
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Enhancement of spin-orbit coupling in Dirac semimetal Cd$_{3}$As$_{2}$ films by Sb-do**
Authors:
Yusuke Nakazawa,
Masaki Uchida,
Shinichi Nishihaya,
Mizuki Ohno,
Shin Sato,
Masashi Kawasaki
Abstract:
We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb do** leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement…
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We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb do** leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement by comparing Sb-doped Cd$_{3}$As$_{2}$ with other compound semiconductors. Sb-doped Cd$_{3}$As$_{2}$ will be a suitable system for further investigations and functionalization of topological Dirac semimetals.
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Submitted 10 January, 2021;
originally announced January 2021.
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Ferromagnetic state above room temperature in a proximitized topological Dirac semimetal
Authors:
Masaki Uchida,
Takashi Koretsune,
Shin Sato,
Markus Kriener,
Yusuke Nakazawa,
Shinichi Nishihaya,
Yasujiro Taguchi,
Ryotaro Arita,
Masashi Kawasaki
Abstract:
We report an above-room-temperature ferromagnetic state realized in a proximitized Dirac semimetal, which is fabricated by growing typical Dirac semimetal Cd$_3$As$_2$ films on a ferromagnetic garnet with strong perpendicular magnetization. Observed anomalous Hall conductivity with substantially large Hall angles is found to be almost proportional to magnetization and opposite in sign to it. Theor…
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We report an above-room-temperature ferromagnetic state realized in a proximitized Dirac semimetal, which is fabricated by growing typical Dirac semimetal Cd$_3$As$_2$ films on a ferromagnetic garnet with strong perpendicular magnetization. Observed anomalous Hall conductivity with substantially large Hall angles is found to be almost proportional to magnetization and opposite in sign to it. Theoretical calculations based on first-principles electronic structure also demonstrate that the Fermi-level dependent anomalous Hall conductivity reflects the Berry curvature originating in the split Weyl nodes. The present Dirac-semimetal/ferromagnetic-insulator heterostructure will provide a novel platform for exploring Weyl-node transport phenomena and spintronic functions lately proposed for topological semimetals.
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Submitted 26 December, 2019;
originally announced December 2019.
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Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films
Authors:
Y. Nakazawa,
M. Uchida,
S. Nishihaya,
S. Sato,
A. Nakao,
J. Matsuno,
M. Kawasaki
Abstract:
Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high ele…
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Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films adopting molecular beam epitaxy. The highest electron mobility ($μ$ = 3 $\times$ 10$^{4}$ cm$^{2}$/Vs) among the reported film samples has been achieved at a low carrier density ($\textit{n} = 5$ $\times$ 10$^{16}$ cm$^{-3}$). In the magnetotransport measurement, Hall plateau-like structures are commonly observed in spite of the 3D thick films ($\textit{t} = 120$ nm). On the other hand, field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation.
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Submitted 17 July, 2019;
originally announced July 2019.
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Quantized surface transport in topological Dirac semimetal films
Authors:
Shinichi Nishihaya,
Masaki Uchida,
Yusuke Nakazawa,
Ryosuke Kurihara,
Kazuto Akiba,
Markus Kriener,
Atsushi Miyake,
Yasujiro Taguchi,
Masashi Tokunaga,
Masashi Kawasaki
Abstract:
Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bu…
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Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bulks have drawn attention to the novel quantization phenomena possibly evolving from the Weyl orbit. Here we report surface quantum oscillation and its evolution into quantum Hall states in Cd3As2 thin film samples, where bulk dimensionality, Fermi energy, and band topology are systematically controlled. We reveal essential involvement of bulk states in the quantized surface transport and the resultant quantum Hall degeneracy depending on the bulk occupation. Our demonstration of surface transport controlled in film samples also paves a way for engineering Fermi-arc-mediated transport in topological semimetals.
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Submitted 22 April, 2019;
originally announced April 2019.
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Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films
Authors:
S. Nishihaya,
M. Uchida,
Y. Nakazawa,
K. Akiba,
M. Kriener,
Y. Kozuka,
A. Miyake,
Y. Taguchi,
M. Tokunaga,
M. Kawasaki
Abstract:
The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-f…
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The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pum** have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn do**, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit coupling.
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Submitted 6 June, 2018;
originally announced June 2018.
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Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2
Authors:
Shinichi Nishihaya,
Masaki Uchida,
Yusuke Nakazawa,
Markus Kriener,
Yusuke Kozuka,
Yasujiro Taguchi,
Masashi Kawasaki
Abstract:
The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling pa…
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The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling parameter. From this perspective, we report here the carrier-density control of quantum Hall states realized in thin films of DSM Cd3As2. Chemical do** of Zn combined with electrostatic gating has enabled us to tune the carrier density over a wide range and continuously even across the charge neutrality point. Comprehensive analyses of the gate-tuned quantum transport have revealed Landau level formation from linearly dispersed sub-bands and its contribution to the quantum Hall states. Our achievements pave the way also for investigating the low energy physics near the Dirac points of DSM.
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Submitted 19 May, 2018;
originally announced May 2018.
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Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3
Authors:
Yusuke Nakazawa,
Masaki Uchida,
Shinichi Nishihaya,
Markus Kriener,
Yusuke Kozuka,
Yasujiro Taguchi,
Masashi Kawasaki
Abstract:
Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised cap** laye…
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Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised cap** layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate.
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Submitted 17 April, 2018;
originally announced April 2018.
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Quantum Hall states observed in thin films of Dirac semimetal Cd3As2
Authors:
Masaki Uchida,
Yusuke Nakazawa,
Shinichi Nishihaya,
Kazuto Akiba,
Markus Kriener,
Yusuke Kozuka,
Atsushi Miyake,
Yasujiro Taguchi,
Masashi Tokunaga,
Naoto Nagaosa,
Yoshinori Tokura,
Masashi Kawasaki
Abstract:
A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 fi…
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A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.
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Submitted 26 December, 2017;
originally announced December 2017.
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Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating
Authors:
Shinichi Nishihaya,
Masaki Uchida,
Yusuke Kozuka,
Yoshihiro Iwasa,
Masashi Kawasaki
Abstract:
An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin film…
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An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO$_3$ thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions.
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Submitted 10 August, 2016;
originally announced August 2016.
