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On the superconducting gap structure of the miassite Rh17S15: Nodal or nodeless?
Authors:
J. Y. Nie,
C. C. Zhao,
C. Q. Xu,
B. Li,
C. P. Tu,
X. Zhang,
D. Z. Dai,
H. R. Wang,
S. Xu,
Wenhe Jiao,
B. M. Wang,
Zhu'an Xu,
Xiaofeng Xu,
S. Y. Li
Abstract:
Recent penetration depth measurement claimed the observation of unconventional superconductivity in the miassite Rh$_{17}$S$_{15}$ single crystals, evidenced by the linear-in-temperature penetration depth at low temperatures, thereby arguing for the presence of the lines of node in its superconducting gap structure. Here we measure the thermal conductivity of Rh$_{17}$S$_{15}$ single crystals down…
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Recent penetration depth measurement claimed the observation of unconventional superconductivity in the miassite Rh$_{17}$S$_{15}$ single crystals, evidenced by the linear-in-temperature penetration depth at low temperatures, thereby arguing for the presence of the lines of node in its superconducting gap structure. Here we measure the thermal conductivity of Rh$_{17}$S$_{15}$ single crystals down to 110 mK and up to a field of 8 T ($\simeq 0.4H{\rm_{c2}}$). In marked contrast to the penetration depth measurement, we observe a negligible residual linear term $κ_0/T$ in zero field, in line with the nodeless gap structure. The field dependence of $κ_0(H)/T$ shows a profile that is more consistent with either a highly anisotropic gap structure or multiple nodeless gaps with significantly different magnitudes. Moreover, first-principles calculations give two electronic bands with complex shape of Fermi surfaces. These results suggest multigap nodeless superconductivity in this multiband Rh$_{17}$S$_{15}$ superconductor.
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Submitted 14 May, 2024;
originally announced May 2024.
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Tunable exciton valley-pseudospin orders in moiré Bose-Hubbard model
Authors:
Richen Xiong,
Samuel L. Brantly,
Kaixiang Su,
Jacob H. Nie,
Zihan Zhang,
Rounak Banerjee,
Hayley Ruddick,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Cenke Xu,
Chenhao **
Abstract:
Spin and charge are the two most important degrees of freedom of electrons. Their interplay lies at the heart of numerous strongly correlated phenomena including Hubbard model physics and high temperature superconductivity. Such interplay for bosons, on the other hand, is largely unexplored in condensed matter systems. Here we demonstrate a unique realization of the spin-1/2 Bose-Hubbard model thr…
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Spin and charge are the two most important degrees of freedom of electrons. Their interplay lies at the heart of numerous strongly correlated phenomena including Hubbard model physics and high temperature superconductivity. Such interplay for bosons, on the other hand, is largely unexplored in condensed matter systems. Here we demonstrate a unique realization of the spin-1/2 Bose-Hubbard model through excitons in a semiconducting moiré superlattice. We find evidence of a transient in-plane ferromagnetic (FM-$xy$) order of exciton spin - here valley pseudospin - around exciton filling $ν_{ex}$ = 1, which transitions into a FM-$z$ order both with increasing exciton filling and a small magnetic field of 10 mT. The phase diagram is different from the fermion case and is qualitatively captured by a simple phenomenological model, highlighting the unique consequence of Bose-Einstein statistics. Our study paves the way for engineering exotic phases of matter from spinor bosons, as well as for unconventional devices in optics and quantum information science.
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Submitted 3 May, 2024; v1 submitted 29 April, 2024;
originally announced April 2024.
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Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures
Authors:
Hongyuan Li,
Ziyu Xiang,
Tianle Wang,
Mit H. Naik,
Woochang Kim,
Jiahui Nie,
Shiyu Li,
Zhehao Ge,
Zehao He,
Yunbo Ou,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Steven G. Louie,
Michael P. Zaletel,
Michael F. Crommie,
Feng Wang
Abstract:
One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demon…
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One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics.
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Submitted 25 April, 2024;
originally announced April 2024.
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Quantum Melting of a Disordered Wigner Solid
Authors:
Ziyu Xiang,
Hongyuan Li,
Jianghan Xiao,
Mit H. Naik,
Zhehao Ge,
Zehao He,
Sudi Chen,
Jiahui Nie,
Shiyu Li,
Yifan Jiang,
Renee Sailus,
Rounak Banerjee,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Steven G. Louie,
Michael F. Crommie,
Feng Wang
Abstract:
The behavior of two-dimensional electron gas (2DEG) in extreme coupling limits are reasonably well-understood, but our understanding of intermediate region remains limited. Strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at very low densities, and these evolve to a Fermi liquid at high densities. At intermediate densities, however, where the Wigner crystal…
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The behavior of two-dimensional electron gas (2DEG) in extreme coupling limits are reasonably well-understood, but our understanding of intermediate region remains limited. Strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at very low densities, and these evolve to a Fermi liquid at high densities. At intermediate densities, however, where the Wigner crystal melts into a strongly correlated electron fluid that is poorly understood partly due to a lack of microscopic probes for delicate quantum phases. Here we report the first imaging of a disordered Wigner solid and its quantum densification and quantum melting behavior in a bilayer MoSe2 using a non-invasive scanning tunneling microscopy (STM) technique. We observe a Wigner solid with nanocrystalline domains pinned by local disorder at low hole densities. With slightly increasing electrostatic gate voltages, the holes are added quantum mechanically during the densification of the disordered Wigner solid. As the hole density is increased above a threshold (p ~ 5.7 * 10e12 (cm-2)), the Wigner solid is observed to melt locally and create a mixed phase where solid and liquid regions coexist. With increasing density, the liquid regions gradually expand and form an apparent percolation network. Local solid domains appear to be pinned and stabilized by local disorder over a range of densities. Our observations are consistent with a microemulsion picture of Wigner solid quantum melting where solid and liquid domains emerge spontaneously and solid domains are pinned by local disorder.
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Submitted 8 February, 2024;
originally announced February 2024.
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Layer-dependent superconductivity in iron-based superconductors
Authors:
Ke Meng,
Xu Zhang,
Boqin Song,
Baizhuo Li,
Xiangming Kong,
Sicheng Huang,
Xiaofan Yang,
Xiaobo **,
Yiyuan Wu,
Jiaying Nie,
Guanghan Cao,
Shiyan Li
Abstract:
The Hohenberg-Mermin-Wagner theorem states that a two-dimensional system cannot spontaneously break a continuous symmetry at finite temperature. This is supported by the observation of layer-dependent superconductivity in the quasi-two-dimensional superconductor NbSe2, in which the superconducting transition temperature (Tc) is reduced by about 60% in the monolayer limit. However, for the extremel…
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The Hohenberg-Mermin-Wagner theorem states that a two-dimensional system cannot spontaneously break a continuous symmetry at finite temperature. This is supported by the observation of layer-dependent superconductivity in the quasi-two-dimensional superconductor NbSe2, in which the superconducting transition temperature (Tc) is reduced by about 60% in the monolayer limit. However, for the extremely anisotropic copper-based high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi-2212), the Tc of the monolayer is almost identical to that of its bulk counterpart. To clarify the effect of dimensionality on superconductivity, here we successfully fabricate ultrathin flakes of CsCa2Fe4As4F2, a highly anisotropic iron-based high-Tc superconductor, down to monolayer. The monolayer flake exhibits the highest Tc of 24 K (after tuning to the optimal do** by ionic liquid gating), which is about 20% lower than that of the bulk crystal. We also fabricate ultrathin flakes of CaKFe4As4, another iron-based superconductor with much smaller anisotropy. The Tc of the 3-layer flake decreases by 46%, showing a more pronounced dimensional effect than that of CsCa2Fe4As4F2. By carefully examining their anisotropy and the c-axis coherence length, we reveal the general trend and empirical law of the layer-dependent superconductivity in these quasi-two-dimensional superconductors. From this, the Tc of a new monolayer superconductor can be extrapolated.
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Submitted 24 November, 2023;
originally announced November 2023.
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Multigap nodeless superconductivity in the topological semimetal PdTe
Authors:
Chengcheng Zhao,
Xiangqi Liu,
**** Wang,
Chunqiang Xu,
Baomin Wang,
Wei Xia,
Zhenhai Yu,
Xiaobo **,
Xu Zhang,
**g Wang,
Dongzhe Dai,
Chengpeng Tu,
Jiaying Nie,
Hanru Wang,
Yihan Jiao,
Daniel Duong,
Silu Huang,
Rongying **,
Zhu'an Xu,
Yanfeng Guo,
Xiaofeng Xu,
Shiyan Li
Abstract:
Recently PdTe was identified as a spin-orbit coupled topological Dirac semimetal and was claimed to exhibit both bulk-nodal and surface-nodeless superconducting gaps. Here we report the ultralow-temperature thermal conductivity measurements on PdTe single crystals with $T_c$ = 4.5 K to investigate its superconducting gap structure. It is found that the residual linear term $κ_0/T$ is negligible in…
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Recently PdTe was identified as a spin-orbit coupled topological Dirac semimetal and was claimed to exhibit both bulk-nodal and surface-nodeless superconducting gaps. Here we report the ultralow-temperature thermal conductivity measurements on PdTe single crystals with $T_c$ = 4.5 K to investigate its superconducting gap structure. It is found that the residual linear term $κ_0/T$ is negligible in zero magnetic field. Furthermore, the field dependence of $κ_0(H)/T$ exhibits an $\sf S$-shaped curve. These results suggest that PdTe has multiple nodeless superconducting gaps, which is at odds with the claimed bulk-nodal gap. The reason for the discrepancy is likely that previous angle-resolved photoemission spectroscopy measurements were only performed down to 2 K and cannot observe the smaller nodeless gap. The fully gapped superconducting state in PdTe is compatible with it being a topological superconductor candidate.
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Submitted 12 October, 2023;
originally announced October 2023.
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Microstructure and structural modulation of lutetium dihydride LuH2 as seen via transmission electron microscopy
Authors:
Xiao-** Ma,
Ning-Ning Wang,
Wen-Tao Wang,
**g-Zhe Nie,
Wen-Li Gao,
Shuai-Shuai Sun,
Jun Li,
Huan-Fang Tian,
Tian-Long Xia,
**-Guang Cheng,
Jian-Qi Li,
Huai-Xin Yang
Abstract:
Structural investigations conducted using transmission electron microscopy (TEM) on LuH2 synthesized under atmospheric pressure (AP-LuH2) and nitrogen-doped LuH2 synthesized under high pressure (HP-LuH2) have revealed numerous microstructural phenomena. Both materials show a clear superstructure modulation with wave vector, q^* = 1/4 (2-20), and this modulation can be well interpreted by the displ…
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Structural investigations conducted using transmission electron microscopy (TEM) on LuH2 synthesized under atmospheric pressure (AP-LuH2) and nitrogen-doped LuH2 synthesized under high pressure (HP-LuH2) have revealed numerous microstructural phenomena. Both materials show a clear superstructure modulation with wave vector, q^* = 1/4 (2-20), and this modulation can be well interpreted by the displacements of Lu atoms. Further investigations on the nitrogen-doped HP-LuH2 materials reveal the appearance of high-density antiphase boundaries, in particular, domain walls of a few atomic layer thickness without structural modulation can be observed, suggesting possible interface properties could be detected in this system. In-situ TEM observations of AP-LuH2 suggest that no evident structural phase transition occurs between 94 K and 673 K.
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Submitted 26 September, 2023;
originally announced September 2023.
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Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates
Authors:
Zuojian Pan,
Zhizhong Chen,
Yiyong Chen,
Haodong Zhang,
Han Yang,
**gxin Nie,
Chuhan Deng,
Boyan Dong,
Daqi Wang,
Yuchen Li,
Weihua Chen,
Fei Jiao,
Xiangning Kang,
Chuanyu Jia,
Zhiwen Liang,
Qi Wang,
Guoyi Zhang,
Bo Shen
Abstract:
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adj…
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Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films.
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Submitted 21 August, 2023;
originally announced August 2023.
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Pressure-induced double-dome superconductivity in kagome metal CsTi3Bi5
Authors:
J. Y. Nie,
X. F. Yang,
X. Zhang,
X. Q. Liu,
W. Xia,
D. Z. Dai,
C. C. Zhao,
C. P. Tu,
X. M. Kong,
X. B. **,
Y. F. Guo,
S. Y. Li
Abstract:
We present high-pressure resistance measurements up to 40 GPa on recently discovered titanium-based kagome metal CsTi$_3$Bi$_5$. At ambient pressure, CsTi$_3$Bi$_5$ shows no evidence of superconductivity in resistivity and specific heat. By applying pressure, superconductivity emerges and the superconducting transition temperature ${\it T}_{\rm c}$ reaches its first maximum of 1.2 K at $\sim$5 GPa…
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We present high-pressure resistance measurements up to 40 GPa on recently discovered titanium-based kagome metal CsTi$_3$Bi$_5$. At ambient pressure, CsTi$_3$Bi$_5$ shows no evidence of superconductivity in resistivity and specific heat. By applying pressure, superconductivity emerges and the superconducting transition temperature ${\it T}_{\rm c}$ reaches its first maximum of 1.2 K at $\sim$5 GPa. Then the ${\it T}_{\rm c}$ is suppressed by pressure and cannot be detected around 10 GPa, manifesting as a superconducting dome. Remarkably, upon further increasing pressure above $\sim$13 GPa, another superconducting dome shows up, with the maximum ${\it T}_{\rm c}$ of 0.6 K and ending pressure at $\sim$36 GPa. The variation of ${\it T}_{\rm c}$ displays a clear double-dome shape in the superconducting phase diagram. Our work demonstrates the similarity between CsTi$_3$Bi$_5$ and CsV$_3$Sb$_5$, providing valuable insights into the rich physics of these novel kagome metals.
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Submitted 19 August, 2023;
originally announced August 2023.
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Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
Authors:
Z. Pan,
Z. Chen,
H. Zhang,
H. Yang,
Y. Chen,
J. Nie,
C. Deng,
B. Dong,
D. Wang,
Y. Li,
H. Lin,
W. Chen,
F. Jiao,
X. Kang,
C. Jia,
Z. Liang,
Q. Wang,
G. Zhang,
B. Shen
Abstract:
Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red M…
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Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red MQWs at the top. When high-density trench defects are introduced into the green MQWs, the upper red MQWs exhibit a significant wavelength redshift of 68 nm and approximately 6-fold luminescence enhancement compared to those without trench defects. The wavelength redshift is attributed to the increased indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects. The mechanisms behind the superior luminescent properties of red MQWs within trench defects are explored in detail. Red InGaN LEDs with an internal quantum efficiency of 16.4% are achieved by modulating the trench defects. The method of achieving InGaN-based red emission by introducing trench defects is simple and reproducible, requiring no additional substrate designs. This research provides a novel pathway toward achieving high-efficiency red InGaN LEDs.
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Submitted 28 December, 2023; v1 submitted 30 July, 2023;
originally announced July 2023.
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Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure
Authors:
Antonio Rossi,
Jonas Zipfel,
Indrajit Maity,
Monica Lorenzon,
Luca Francaviglia,
Emma C. Regan,
Zuocheng Zhang,
Jacob H. Nie,
Edward Barnard,
Kenji Watanabe,
Takashi Taniguchi,
Eli Rotenberg,
Feng Wang,
Johannes Lischner,
Archana Raja,
Alexander Weber-Bargioni
Abstract:
Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate ho…
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Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate how phasons are integral to properly describing and understanding low-temperature interlayer exciton diffusion in WS2/WSe2 heterostructure. We perform photoluminescence (PL) spectroscopy to understand how the coupling between the layers, affected by their relative orientation, impacts the excitonic properties of the system. Samples fabricated with stacking angles of 0° and 60° are investigated taking into account the stacking angle dependence of the two common moiré potential profiles. Additionally, we present spatially and time-resolved exciton diffusion measurements, looking at the photoluminescence emission in a temperature range from 30 K to 250 K. An accurate potential for the two configurations are computed via density functional theory (DFT) calculations. Finally, we perform molecular dynamics simulation in order to visualize the phasons motion, estimating the phason speed at different temperatures, providing novel insights into the mechanics of exciton propagation at low temperatures that cannot be explained within the frame of classical exciton diffusion alone.
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Submitted 18 January, 2023;
originally announced January 2023.
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Kondo scattering in underdoped Nd1-xSrxNiO2 infinite-layer superconducting thin films
Authors:
T. N. Shao,
Z. T. Zhang,
Y. J. Qiao,
Q. Zhao,
H. W. Liu,
X. X. Chen,
W. M. Jiang,
C. L. Yao,
X. Y. Chen,
M. H. Chen,
R. F. Dou,
C. M. Xiong,
G. M. Zhang,
Y. -F. Yang,
J. C. Nie
Abstract:
The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidences for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal…
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The recent discovery of superconductivity in infinite-layer nickelates generates tremendous research endeavors, but the ground state of their parent compounds is still under debate. Here, we report experimental evidences for the dominant role of Kondo scattering in the underdoped Nd1-xSrxNiO2 thin films. A resistivity minimum associated with logarithmic temperature dependence in both longitudinal and Hall resistivities are observed in the underdoped Nd1-xSrxNiO2 samples before the superconducting transition. A linear scaling behavior $σ_{xy}^{AHE}\simσ_{xx}$ between anomalous Hall conductivity $σ_{xy}^{AHE}$ and conductivity $σ_{xx}$ is revealed, verifying the dominant Kondo scattering at low temperature. The effect of weak (anti-)localization is found to be secondary. Our experiments can help clarifying the basic physics in the underdoped Nd1-xSrxNiO2 infinite-layer thin films.
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Submitted 13 September, 2022;
originally announced September 2022.
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Correlated insulator of excitons in WSe2/WS2 moiré superlattices
Authors:
Richen Xiong,
Jacob H. Nie,
Samuel L. Brantly,
Patrick Hays,
Renee Sailus,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Chenhao **
Abstract:
A panoply of unconventional electronic states has been observed in moiré superlattices. Engineering similar bosonic phases remains, however, largely unexplored. We report the observation of a bosonic correlated insulator in WSe2/WS2 moiré superlattices composed of excitons, i.e., tightly bound electron-hole pairs. We develop a pump probe spectroscopy method that we use to observe an exciton incomp…
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A panoply of unconventional electronic states has been observed in moiré superlattices. Engineering similar bosonic phases remains, however, largely unexplored. We report the observation of a bosonic correlated insulator in WSe2/WS2 moiré superlattices composed of excitons, i.e., tightly bound electron-hole pairs. We develop a pump probe spectroscopy method that we use to observe an exciton incompressible state at exciton filling ν_ex = 1 and charge neutrality, indicating a correlated insulator of excitons. With varying charge density, the bosonic correlated insulator continuously transitions into an electron correlated insulator at charge filling ν_e = 1, suggesting a mixed correlated insulating state between the two limits. Our studies establish semiconducting moiré superlattices as an intriguing platform for engineering bosonic phases.
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Submitted 14 May, 2023; v1 submitted 21 July, 2022;
originally announced July 2022.
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Efficient broadband THz generation in BNA organic crystal at Ytterbium laser wavelength
Authors:
Hovan Lee,
Claudia Gollner,
Jiaqi Nie,
Yan Zhang,
Cedric Weber,
Mostafa Shalaby
Abstract:
In this work, we demonstrate BNAs high potential for efficient generation of high power THz using ytterbium laser wavelengths. We study the generation theoretically and experimentally using laser wavelength of 960-1150 nm. Broadband pulses of 0-7 THz and high efficiency of 0.6% are demonstrated.
In this work, we demonstrate BNAs high potential for efficient generation of high power THz using ytterbium laser wavelengths. We study the generation theoretically and experimentally using laser wavelength of 960-1150 nm. Broadband pulses of 0-7 THz and high efficiency of 0.6% are demonstrated.
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Submitted 9 September, 2021;
originally announced September 2021.
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Discovery of Electrochemically Induced Grain Boundary Transitions
Authors:
Jiuyuan Nie,
Chongze Hu,
Qizhang Yan,
Jian Luo
Abstract:
Electric fields and currents, which are used in innovative materials processing and electrochemical energy conversion, can often alter microstructures in unexpected ways. However, little is known about the underlying mechanisms. Using ZnO-Bi2O3 as a model system, this study uncovers how an applied electric current can change the microstructural evolution through an electrochemically induced grain…
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Electric fields and currents, which are used in innovative materials processing and electrochemical energy conversion, can often alter microstructures in unexpected ways. However, little is known about the underlying mechanisms. Using ZnO-Bi2O3 as a model system, this study uncovers how an applied electric current can change the microstructural evolution through an electrochemically induced grain boundary (GB) transition. By combining aberration-corrected electron microscopy, photoluminescence spectroscopy, first-principles calculations, a generalizable thermodynamic model, and ab initio molecular dynamics, this study reveals that electrochemical reduction can cause a GB disorder-to-order transition to markedly increase GB diffusivities and mobilities. Consequently, abruptly enhanced or abnormal grain growth takes place. These findings advance our fundamental knowledge of GB complexion (phase-like) transitions and electric field effects on microstructural stability and evolution, with broad scientific and technological impacts. A new method to tailor the GB structures and properties, as well as the microstructures, electrochemically can also be envisioned.
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Submitted 25 February, 2021; v1 submitted 12 December, 2020;
originally announced December 2020.
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Spin map** of intralayer antiferromagnetism and spin-flop transition in monolayer CrTe$_2$
Authors:
**g-**g Xian,
Cong Wang,
Rui Li,
Mengjiao Han,
Junhao Lin,
Wen-Hao Zhang,
Zhen-Yu Liu,
Zhi-Mo Zhang,
**-Hua Nie,
Wei Ji,
Ying-Shuang Fu
Abstract:
Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches the understanding regarding two-dimensional (2D) magnetic orders and holds special virtues over ferromagnetism in spintronic applications. However, the studies on intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. In this study, by combining spin-polarised scanning tunnelling microsco…
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Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches the understanding regarding two-dimensional (2D) magnetic orders and holds special virtues over ferromagnetism in spintronic applications. However, the studies on intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. In this study, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe2, which has been successfully grown through molecular beam epitaxy. Surprisingly, we observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is a strong ferromagnet, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin-flop transition under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth studies.
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Submitted 7 December, 2021; v1 submitted 11 November, 2020;
originally announced November 2020.
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Map** electronic states of dual-parallel and symmetric zigzag grain boundaries of graphene on highly oriented pyrolytic graphite
Authors:
Jun Ma,
Xiaying Li,
Long**g Yin,
Wenxiao Wang,
Qi Sun,
Yu Yang,
** Zhang,
Jiacai Nie,
Changmin Xiong,
Ruifen Dou
Abstract:
The grain boundaries (GBs) of a graphene surface were extensively studied because GBs with specific defect configurations result in the formation of new curved structures, which can be treated as new carbon allotropes. We studied the structures and electronic spectra of two periodic GBs in graphene on highly oriented pyrolytic graphite (HOPG) surfaces using scanning tunneling microscopy and spectr…
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The grain boundaries (GBs) of a graphene surface were extensively studied because GBs with specific defect configurations result in the formation of new curved structures, which can be treated as new carbon allotropes. We studied the structures and electronic spectra of two periodic GBs in graphene on highly oriented pyrolytic graphite (HOPG) surfaces using scanning tunneling microscopy and spectroscopy (STM/S). Our results demonstrated that a GB consisting of dual parallel periodic dislocation cores of pentagonal-heptagonal (5-7) carbon rings gives rise to an enhanced localized state at 0.45 eV above the Dirac point in graphene surfaces, which is attributed to van Hove singularities (VHSs). Moreover, the energy positions of the localized states are varied between 0.40 and 0.47 eV depending on the site and eventually decayed to 0.36 eV. The variation of the energy positions is induced by two parallel GBs because of the higher electron density at the GB as a defect center and the lower electron away from the GB. Another periodic GB with a symmetric zigzag structural feature induced VHSs at -0.038 and 0.12 eV near the Fermi level. Moreover, intervalley scattering was observed on both these GBs. This means that carrier concentration and thus, the conductance around the periodic GBs can be significantly enhanced by localized density of states. This finding suggests that graphene with a properly embedded ordered GB is promising for improving the performance of graphene-based electronic devices.
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Submitted 28 September, 2017;
originally announced September 2017.
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Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface
Authors:
Shengchun Shen,
Ying Xing,
Pengjie Wang,
Haiwen Liu,
Hai-Long Fu,
Yangwei Zhang,
Lin He,
X. C. Xie,
Xi Lin,
Jiacai Nie,
Jian Wang
Abstract:
Diverse phenomena emerge at the interface between band insulators LaAlO3 and SrTiO3, such as superconductivity and ferromagnetism, showing an opportunity for potential applications as well as bringing fundamental research interests. Particularly, the two-dimensional electron gas formed at LaAlO3/SrTiO3 interface offers an appealing platform for quantum phase transition from a superconductor to a w…
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Diverse phenomena emerge at the interface between band insulators LaAlO3 and SrTiO3, such as superconductivity and ferromagnetism, showing an opportunity for potential applications as well as bringing fundamental research interests. Particularly, the two-dimensional electron gas formed at LaAlO3/SrTiO3 interface offers an appealing platform for quantum phase transition from a superconductor to a weakly localized metal. Here we report the superconductor-metal transition in superconducting two-dimensional electron gas formed at LaAlO3/SrTiO3(110) interface driven by a perpendicular magnetic field. Interestingly, when approaching the quantum critical point, the dynamic critical exponent is not a constant but a diverging value, which is a direct evidence of quantum Griffiths singularity raised from quenched disorder at ultralow temperatures. Furthermore, the hysteretic property of magnetoresistance was firstly observed at LaAlO3/SrTiO3(110) interfaces, which suggests potential coexistence of superconductivity and ferromagnetism.
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Submitted 6 June, 2016; v1 submitted 3 March, 2016;
originally announced March 2016.
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Detecting giant electron-hole asymmetry in graphene monolayer generated by strain and charged-defect scattering via Landau level spectroscopy
Authors:
Ke-Ke Bai,
Yi-Cong Wei,
Jia-Bin Qiao,
Si-Yu Li,
Long-**g Yin,
Wei Yan,
Jia-Cai Nie,
Lin He
Abstract:
The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi…
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The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi velocities of electrons and holes are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the and are measured as 1.2 x 106 m/s and 1.02 x106 m/s, respectively. This giant asymmetry originates from enhanced next-nearest-neighbor hop** in the strained region. Around positively charged-defect, we observe opposite electron-hole asymmetry, and the and are measured to be 0.86x 106 m/s and 1.14 x106 m/s, respectively. Such a large asymmetry is attributed to the fact that the massless Dirac fermions in graphene monolayer are scattered more strongly when they are attracted to the charged-defect than when they are repelled from it.
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Submitted 30 June, 2015;
originally announced July 2015.
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Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer
Authors:
Wen-Xiao Wang,
Long-**g Yin,
Jia-Bin Qiao,
Tuocheng Cai,
Si-Yu Li,
Rui-Fen Dou,
Jia-Cai Nie,
Xiaosong Wu,
Lin He
Abstract:
The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially…
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The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by inversion symmetry breaking by the substrate potential, is observed in the graphene on both SiC and graphite substrates. Such a gap splits the n = 0 Landau level (LL) into two levels, 0+ and 0-. We demonstrate that the amplitude of the wavefunction of the 0- LL is mainly at the A sites and that of the 0+ LL is mainly at the B sites of graphene, characterizing the internal structure of the spinor of the n = 0 LL. This provides direct evidence of the two-component nature of massless Dirac fermions.
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Submitted 23 May, 2015;
originally announced May 2015.
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Landau Quantization and Fermi Velocity Renormalization in Twisted Graphene Bilayers
Authors:
Long-**g Yin,
Jia-Bin Qiao,
Wei-Jie Zuo,
Wei Yan,
Rui Xu,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
Currently there is a lively discussion concerning Fermi velocity renormalization in twisted bilayers and several contradicted experimental results are reported. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). The interlayer coupling strengths between the adjacent bilayers are measured according to energy separations of two…
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Currently there is a lively discussion concerning Fermi velocity renormalization in twisted bilayers and several contradicted experimental results are reported. Here we study electronic structures of the twisted bilayers by scanning tunneling microscopy (STM) and spectroscopy (STS). The interlayer coupling strengths between the adjacent bilayers are measured according to energy separations of two pronounced low-energy van Hove singularities (VHSs) in the STS spectra. We demonstrate that there is a large range of values for the interlayer interaction in different twisted bilayers. Below the VHSs, the observed Landau quantization in the twisted bilayers is identical to that of massless Dirac fermions in graphene monolayer, which allows us to measure the Fermi velocity directly. Our result indicates that the Fermi velocity of the twisted bilayers depends remarkably on both the twisted angles and the interlayer coupling strengths. This removes the discrepancy about the Fermi velocity renormalization in the twisted bilayers and provides a consistent interpretation of all current data.
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Submitted 18 April, 2015;
originally announced April 2015.
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Magnetic-field-assisted electron confinement and valley splitting in strained graphene
Authors:
Jun-Fang Liu,
Ke-Ke Bai,
Jia-Bin Qiao,
Yu Zhou,
Jia-Cai Nie,
Hailin Peng,
Zhongfan Liu,
Lin He
Abstract:
Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling m…
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Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to the step edges of Cu(111), obtained by using thermal strain engineering3,4. We study these strained structures with sub-nanometre-resolved scanning tunnelling microscopy and spectroscopy and identify their spatially modulated Dirac points, demonstrating the effect of overlap of Cu and graphene wave functions on the charge transfer between them5. By applying a magnetic field of 8 Tesla, electron confinement, as revealed by regularly spaced sharp resonances6,7, is observed in the strained graphene. In some regions of the strained graphene, repetitive pairs of resonance peaks appear in the tunnelling spectra. This provides direct and compelling evidence for lifting of valley degeneracy due to the coexistence of both the magnetic field and the pseudomagnetic field.
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Submitted 29 March, 2015;
originally announced March 2015.
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Spatially resolving unconventional interface Landau quantization in a graphene monolayer-bilayer planar junction
Authors:
Wei Yan,
Si-Yu Li,
Long-**g Yin,
Jia-Bin Qiao,
Jia-Cai Nie,
Lin He
Abstract:
Graphene hybrid planar structures consisting of two regions with different quantum Hall (QH) states exhibit unusual transport properties1-5, originating from chiral edge states equilibration at the interface of the two different regions6. Here we present a sub-nanometre-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of a monolayer-bilayer graphene planar junction in the…
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Graphene hybrid planar structures consisting of two regions with different quantum Hall (QH) states exhibit unusual transport properties1-5, originating from chiral edge states equilibration at the interface of the two different regions6. Here we present a sub-nanometre-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of a monolayer-bilayer graphene planar junction in the QH regime. The atomically well-defined interface of such a junction allows us to spatially resolve the interface electronic properties. Around the interface, we detect Landau quantization of massless Dirac fermions, as expected in graphene monolayer, below the charge neutrality point Nc of the junction, whereas unexpectedly, only Landau quantization of massive Dirac fermions, as expected in graphene bilayer, is observed above the Nc. The observed unconventional interface Landau quantization arises from the fact that the quantum conductance across the interface is solely determined by the minimum filling factors (number of edge modes) in the graphene monolayer and bilayer regions of the junction6,7.
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Submitted 3 February, 2015;
originally announced February 2015.
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Landau Quantization in Graphene Monolayer, Bernal Bilayer, and Bernal Trilayer on Graphite Surface
Authors:
Long-**g Yin,
Si-Yu Li,
Jia-Bin Qiao,
Jia-Cai Nie,
Lin He
Abstract:
Electronic properties of surface areas decoupled from graphite are studied using scanning tunnelling microscopy and spectroscopy. We show that it is possible to identify decoupled graphene monolayer, Bernal bilayer, and Bernal trilayer on graphite surface according to their tunnelling spectra in high magnetic field. The decoupled monolayer and bilayer exhibit Landau quantization of massless and ma…
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Electronic properties of surface areas decoupled from graphite are studied using scanning tunnelling microscopy and spectroscopy. We show that it is possible to identify decoupled graphene monolayer, Bernal bilayer, and Bernal trilayer on graphite surface according to their tunnelling spectra in high magnetic field. The decoupled monolayer and bilayer exhibit Landau quantization of massless and massive Dirac fermions, respectively. The substrate generates a sizable band gap, ~35 meV, in the Bernal bilayer, therefore, the eightfold degenerate Landau level at the charge neutrality point is split into two valley-polarized quartets polarized on each layer. In the decoupled Bernal trilayer, we find that both massless and massive Dirac fermions coexist and its low-energy band structure can be described quite well by taking into account only the nearest-neighbor intra- and interlayer hop** parameters. A strong correlation between the Fermi velocity of the massless Dirac fermions and the effective mass of the massive Dirac fermions is observed in the trilayer. Our result demonstrates that the surface of graphite provides a natural ideal platform to probe the electronic spectra of graphene layers.
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Submitted 7 January, 2015;
originally announced January 2015.
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Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride
Authors:
Rui Xu,
Daowei He,
Yuhan Zhang,
Bing Wu,
Fengyuan Liu,
Lan Meng,
Jun-Fang Liu,
Qisheng Wu,
Yi Shi,
**lan Wang,
Jia-Cai Nie,
Xinran Wang,
Lin He
Abstract:
Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover…
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Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and graphene. The flatness of these substrates substantially decreases the C8-BTBT nucleation density and enables repeatable growth of large-area single crystal of the C8-BTBT monolayer. Our experimental result indicates that only out-of-plane roughness greater than 0.6 nm of the substrates could induce disturbance in the crystal growth and consequently affect the charge transport. This information would be important in guiding the growth of high-quality epitaxy molecular film.
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Submitted 2 December, 2014;
originally announced December 2014.
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Electronic Structures and Their Landau Quantizations in Twisted Graphene Bilayer and Trilayer
Authors:
Long-**g Yin,
Jia-Bin Qiao,
Wei Yan,
Rui Xu,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunnelling microscopy and spectroscopy. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced lo…
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Electronic structures and their Landau quantizations in twisted graphene bilayer and trilayer are investigated using scanning tunnelling microscopy and spectroscopy. In the twisted trilayer, the top graphene layer and second layer are AB (Bernal) stacking and there is a stacking misorientation between the second layer and third layer. Both the twisted bilayer and trilayer exhibit two pronounced low-energy van Hove singularities (VHSs) in their spectra. Below the VHSs, the observed Landau level quantization in the twisted bilayer is identical to that of massless Dirac fermion in graphene monolayer. Our result demonstrates that both the VHSs and Fermi velocity of the twisted bilayer depends remarkably on the twist angle and the interlayer coupling strength. In the twisted trilayer, we directly observe Landau quantization of massive Dirac fermion with a sizable band gap 105 meV, which results in valley (layer) polarization of the lowest Landau levels. Such a result is similar to the expected Landau quantization in Bernal graphene bilayer with a moderate electric field.
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Submitted 8 January, 2015; v1 submitted 7 October, 2014;
originally announced October 2014.
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Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy
Authors:
Rui Xu,
Long-**g Yin,
Jia-Bin Qiao,
Ke-Ke Bai,
Jia-Cai Nie,
Lin He
Abstract:
Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. Th…
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Recently, the rhombohedral trilayer graphene (r-TLG) has attracted much attention because of its low-energy flat bands, which are predicted to result in many strongly correlated phenomena. Here, we demonstrate that it is possible to probe the stacking order and electronic spectrum of the r-TLG directly with a scanning tunneling microscopy around a monoatomic step edge of the top graphene layer. The tunneling spectra of the r-TLG exhibit four adjacent peaks, which are generated by the low-energy flat bands, flanking the charge neutrality point. Based on these spectra, the true energy gap and the energy gap at the K-point of the r-TLG are determined as about 9 meV and 23 meV, respectively. The observed features are well reproduced by a low-energy effective Hamiltonian.
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Submitted 21 November, 2014; v1 submitted 20 September, 2014;
originally announced September 2014.
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Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces
Authors:
Yin-Long Han,
Sheng-Chun Shen,
Jie You,
Hai-Ou Li,
Zhong-Zhong Luo,
Cheng-Jian Li,
Guo-Liang Qu,
Chang-Min Xiong,
Rui-Fen Dou,
Lin He,
Donald G Naugle,
Guo-** Guo,
Jia-Cai Nie
Abstract:
Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperatu…
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Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838 (2013)]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.
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Submitted 23 September, 2014; v1 submitted 20 September, 2014;
originally announced September 2014.
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Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer
Authors:
J. Wang,
L. S. Xie,
C. S. Wang,
H. Z. Zhang,
L. Shu,
J. Bai,
Y. S. Chai,
X. Zhao,
J. C. Nie,
C. B. Cao,
C. Z. Gu,
C. M. Xiong,
Y. Sun,
J. Shi,
S. Salahuddin,
K. Xia,
C. W. Nan,
J. X. Zhang
Abstract:
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108…
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A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated manganite film during the spin injection into the capacitor from the nanoscale magnetized tip with an ultralow voltage of 0.1 V, where the threshold spin-polarized current density is ~104 A/cm2 at the tip/manganite interface. The probe-voltage-controlled domain wall motion in the capacitor demonstrates a critical framework for the fundamental understanding of the manipulation of the nano-magnet systems with low energy consumption.
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Submitted 10 July, 2014;
originally announced July 2014.
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The Tip-Induced Twisted Bilayer Graphene Superlattice on HOPG: Capillary Attraction Effect
Authors:
Long **g Yin,
Wen Xiao Wang,
Ke Ke Feng,
Rui-Fen Dou,
Jia-Cai Nie
Abstract:
We use the tip of the scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on the the highly oriented pyrolytic graphite (HOPG) surface through artifically increasing the tip and sample interaction in humid environment. By this means it is possible to tear apart a graphite sheet againt a step and fold this part onto the HOPG surface and thus generate the gap…
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We use the tip of the scanning tunneling microscope (STM) to manipulate single weakly bound nanometer-sized sheets on the the highly oriented pyrolytic graphite (HOPG) surface through artifically increasing the tip and sample interaction in humid environment. By this means it is possible to tear apart a graphite sheet againt a step and fold this part onto the HOPG surface and thus generate the gaphene superlattices with hexagonal symmetry. The tip and sample surface interactions, including the van der Waals force, eletrostatic force and capillary attraction force originating from the Laplace pressure due to the formation of a highly curved fluid meniscus connecting the tip and sample, are discussed in details to understand the fromation mechnism of graphen superlattice induced by the STM tip. Especially, the capillary force is the key role in manipulating the graphite surface sheet in the hunmidity condition. Our approach may provides a simple and feasible route to prepare the controllable superlattices and graphene nanoribbons but also replenish and find down the theory of generation of graphene superlattice on HOPG surface by the tip.
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Submitted 5 May, 2014;
originally announced May 2014.
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Creating One-dimensional Nanoscale Periodic Ripples in a Continuous Mosaic Graphene Monolayer
Authors:
Ke-Ke Bai,
Yu Zhou,
Hong Zheng,
Lan Meng,
Hailin Peng,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotr…
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In previous studies, it proved difficult to realize periodic graphene ripples with wavelengths of few nanometers. Here we show that one-dimensional periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic, locally N-doped, graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We also demonstrate that the observed rippling modes are beyond the descriptions of continuum mechanics due to the decoupling of graphene bending and tensional deformations. Scanning tunneling spectroscopy measurements indicate that the nanorippling generates a periodic electronic superlattice and opens a zero-energy gap of about 130 meV in graphene. This result may pave a facile way for tailoring the structures and electronic properties of graphene.
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Submitted 29 July, 2014; v1 submitted 16 April, 2014;
originally announced April 2014.
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Angle-Dependent van Hove Singularities and Their Breakdown in Twisted Graphene Bilayers
Authors:
Wei Yan,
Lan Meng,
Mengxi Liu,
Jia-Bin Qiao,
Zhao-Dong Chu,
Rui-Fen Dou,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sub…
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The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sublayer graphene not only plays the role of a substrate, but also acts as an equivalent role as the top graphene layer in the structure. Here we report the electronic spectra of slightly twisted graphene bilayers studied by scanning tunneling microscopy and spectroscopy. Our experiment demonstrates that twist-induced van Hove singularities are ubiquitously present for rotation angles theta less than about 3.5o, corresponding to moiré-pattern periods D longer than 4 nm. However, they totally vanish for theta > 5.5o (D < 2.5 nm). Such a behavior indicates that the continuum models, which capture moiré-pattern periodicity more accurately at small rotation angles, are no longer applicable at large rotation angles.
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Submitted 16 April, 2014;
originally announced April 2014.
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Tuning Structures and Electronic Spectra of Graphene Layers by Tilt Grain Boundaries
Authors:
Long-**g Yin,
Jia-Bin Qiao,
Wen-Xiao Wang,
Zhao-Dong Chu,
Kai Fen Zhang,
Rui-Fen Dou,
Chun Lei Gao,
**-Feng Jia,
Jia-Cai Nie,
Lin He
Abstract:
Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectrosc…
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Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our results demonstrate that the twisting changes the electronic spectra of Bernal graphene bilayer and graphene trilayers dramatically. We also study quantum-confined twisted graphene bilayer generated between two adjacent tilt grain boundaries and find that the band structure of such a system is still valid even when the number of superstructures is reduced to two in one direction. It implies that the electronic structure of this system is driven by the physics of a single Moiré spot.
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Submitted 9 April, 2014; v1 submitted 6 December, 2013;
originally announced December 2013.
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Hierarchy of Graphene Wrinkles Induced by Thermal Strain Engineering
Authors:
Lan Meng,
Ying Su,
Dechao Geng,
Gui Yu,
Yunqi Liu,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y obse…
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Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y observed in our experiment by considering both bending energy and stretching energy of the graphene flakes. The prefactor k in the equation is determined to be about 55 nm, which is independent of the size of the graphene flakes. Our experimental result indicates that the classical membrane behavior of graphene persists down to about 100 nm of the wrinkling wavelength.
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Submitted 20 December, 2013; v1 submitted 2 June, 2013;
originally announced June 2013.
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Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects
Authors:
Hui Yan,
Cheng-Cheng Liu,
Ke-Ke Bai,
Xuejiao Wang,
Mengxi Liu,
Wei Yan,
Lan Meng,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Yugui Yao,
Lin He
Abstract:
Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velo…
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Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of graphene by introducing a significant bandgap, which opens an avenue towards all-graphene electronics.
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Submitted 12 April, 2013; v1 submitted 20 February, 2013;
originally announced February 2013.
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Strain Induced One-Dimensional Landau-Level Quantization in Corrugated Graphene
Authors:
Lan Meng,
Wen-Yu He,
Hong Zheng,
Mengxi Liu,
Hui Yan,
Wei Yan,
Zhao-Dong Chu,
Keke Bai,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi v…
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Theoretical research has predicted that ripples of graphene generates effective gauge field on its low energy electronic structure and could lead to zero-energy flat bands, which are the analog of Landau levels in real magnetic fields. Here we demonstrate, using a combination of scanning tunneling microscopy and tight-binding approximation, that the zero-energy Landau levels with vanishing Fermi velocities will form when the effective pseudomagnetic flux per ripple is larger than the flux quantum. Our analysis indicates that the effective gauge field of the ripples results in zero-energy flat bands in one direction but not in another. The Fermi velocities in the perpendicular direction of the ripples are not renormalized at all. The condition to generate the ripples is also discussed according to classical thin-film elasticity theory.
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Submitted 12 April, 2013; v1 submitted 5 December, 2012;
originally announced December 2012.
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Evidence for Superlattice Dirac Points and Space-dependent Fermi Velocity in Corrugated Graphene Monolayer
Authors:
Hui Yan,
Zhao-Dong Chu,
Wei Yan,
Mengxi Liu,
Lan Meng,
Mudan Yang,
Yide Fan,
Jiang Wang,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene g…
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Recent studies show that periodic potentials can generate superlattice Dirac points at energies in graphene (is the Fermi velocity of graphene and G is the reciprocal superlattice vector). Here, we perform scanning tunneling microscopy and spectroscopy studies of a corrugated graphene monolayer on Rh foil. We show that the quasi-periodic ripples of nanometer wavelength in the corrugated graphene give rise to weak one-dimensional (1D) electronic potentials and thereby lead to the emergence of the superlattice Dirac points. The position of the superlattice Dirac point is space-dependent and shows a wide distribution of values. We demonstrated that the space-dependent superlattice Dirac points is closely related to the space-dependent Fermi velocity, which may arise from the effect of the local strain and the strong electron-electron interaction in the corrugated graphene.
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Submitted 6 November, 2012; v1 submitted 8 September, 2012;
originally announced September 2012.
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Controlling the Interlayer Coupling of Twisted Bilayer Graphene
Authors:
Lan Meng,
Wei Yan,
Zhao-Dong Chu,
Yanfeng Zhang,
Lei Feng,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twi…
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The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic properties of the bilayer graphene. Here, we describe a facile method to modulate the local interlayer coupling by adsorption of single molecule magnets onto the twisted bilayer graphene and report the characterization of its electronic band structure using scanning tunneling microscopy and spectroscopy. The low-energy Van Hove singularities (VHSs) and superlattice Dirac cones, induced by the interlayer coupling and graphene-on-graphene moiré respectively, are observed in the tunneling spectra. Our experiment demonstrates that the energy difference of the two VHSs, which reflects the magnitude of interlayer coupling, can be tuned by the local coverage density of adsorption.
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Submitted 4 August, 2012;
originally announced August 2012.
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Flat Bands near Fermi Level of Topological Line Defects on Graphite
Authors:
Lei Feng,
Xianqing Lin,
Lan Meng,
Jia-Cai Nie,
Jun Ni,
Lin He
Abstract:
Flat bands play an important role in the study of strongly correlated phenomena, such as ferromagnetism, superconductivity, and fractional quantum Hall effect. Here we report direct experimental evidence for the presence of flat bands, close to the Fermi level, in one-dimensional topological defects on graphite seen as a pronounced peak in the tunnelling density of states. Our ab initio calculatio…
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Flat bands play an important role in the study of strongly correlated phenomena, such as ferromagnetism, superconductivity, and fractional quantum Hall effect. Here we report direct experimental evidence for the presence of flat bands, close to the Fermi level, in one-dimensional topological defects on graphite seen as a pronounced peak in the tunnelling density of states. Our ab initio calculations indicate that the flat bands with vanishing Fermi velocity originate from sp2 dangling bonds (with antibonding nature) of undercoordinated carbon atoms at the edges of the defects. We further demonstrate that the presence of flat bands could be a universal behavior of 1D defects of graphene/graphite with undercoordinated carbon atoms at the edges of the defects.
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Submitted 5 July, 2012;
originally announced July 2012.
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Angle Dependent Van Hove Singularities in Slightly Twisted Graphene Bilayer
Authors:
Wei Yan,
Mengxi Liu,
Rui-Fen Dou,
Lan Meng,
Lei Feng,
Zhao-Dong Chu,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between…
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Recent studies show that two low-energy Van Hove singularities (VHSs) seen as two pronounced peaks in the density of states (DOS) could be induced in twisted graphene bilayer. Here, we report angle dependent VHSs of slightly twisted graphene bilayer studied by scanning tunneling microscopy and spectroscopy. We show that energy difference of the two VHSs follows \DeltaEvhs ~ \hbarνF\DeltaK between 1.0^{\circ} and 3.0^{\circ} (here νF ~ 1.1\times106 m/s is the Fermi velocity of monolayer graphene, \DeltaK = 2Ksin(θ/2) is the shift between the corresponding Dirac points of the twisted graphene bilayer). This result indicates that the rotation angle between graphene sheets not results in significant reduction of the Fermi velocity, which quite differs from that predicted by band structure calculations. However, around a twisted angle θ~ 1.3^{\circ}, the observed \DeltaEvhs ~ 0.11 eV is much less than the expected value \hbarνF\DeltaK ~ 0.28 eV at 1.3^{\circ}. The origin of the reduction of \DeltaEvhs at 1.3^{\circ} is discussed.
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Submitted 5 September, 2012; v1 submitted 26 June, 2012;
originally announced June 2012.
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Strain-induced Evolution of Electronic Band Structures in a Twisted Graphene Bilayer
Authors:
Wei Yan,
Wen-Yu He,
Zhao-Dong Chu,
Mengxi Liu,
Lan Meng,
Rui-Fen Dou,
Yanfeng Zhang,
Zhongfan Liu,
Jia-Cai Nie,
Lin He
Abstract:
Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-L…
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Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature. The strain and curvature strongly affect the local band structures of the twisted graphene bilayer; the energy difference of the two low-energy van Hove singularities decreases with increasing the lattice deformations and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive Dirac fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap, i.e., the eight-fold degenerate Landau level at the charge neutrality point is splitted into two four-fold degenerate quartets polarized on each layer. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.
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Submitted 14 March, 2013; v1 submitted 26 June, 2012;
originally announced June 2012.
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Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms
Authors:
Lan Meng,
Zhao-Dong Chu,
Yanfeng Zhang,
Ji-Yong Yang,
Rui-Fen Dou,
Jia-Cai Nie,
Lin He
Abstract:
The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analy…
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The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analysis demonstrate that the enhanced intervalley scattering is closely related to the periodic AB stacked atoms (the A atom of layer 1 and the B atom of layer 2 that have the same horizontal positions) that break the sublattice degeneracy of graphene locally. We further show that these periodic AB stacked atoms affect intervalley but not intravalley scattering. The result reported here provides an effective way to atomically manipulate the intervalley scattering of graphene.
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Submitted 26 June, 2012; v1 submitted 15 June, 2012;
originally announced June 2012.
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Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction
Authors:
Rui Xu,
Ke-Ke Bai,
Jia-Cai Nie,
Lin He
Abstract:
Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the tw…
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Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new type of graphene transistors in its vertical direction.
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Submitted 24 April, 2012;
originally announced April 2012.
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Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer
Authors:
Lan Meng,
Yanfeng Zhang,
Wei Yan,
Lei Feng,
Lin He,
Rui-Fen Dou,
Jia-Cai Nie
Abstract:
We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron do** at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS m…
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We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron do** at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 seconds). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.
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Submitted 26 June, 2012; v1 submitted 2 November, 2011;
originally announced November 2011.
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Magnetic Core-Shell Structure and Proximity Effect in 7 nm Single-Crystal Co3O4 Nanowires
Authors:
** Lv,
Yan Zhang,
Rui Xu,
Jia-Cai Nie,
Lin He
Abstract:
We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two Néel temperatures at 56 K (TN of wire cores) and 73 K (TN of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel bahavior is attributed to symmetry breaking of surface Co3+ cations and magnetic p…
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We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two Néel temperatures at 56 K (TN of wire cores) and 73 K (TN of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel bahavior is attributed to symmetry breaking of surface Co3+ cations and magnetic proximity effect. The nanowire shells show macroscopic residual magnetic moments. Cooling in a magnetic field, a fraction of the residual moments are tightly pinned to the antiferromagnetic lattice, which results in an obvious horizontal and vertical shift of hysteresis loop. Our experiment demonstrates that the exchange bias field HE and the pinned magnetic moments Mpin follow a simple expression HE = aMpin with a a constant.
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Submitted 22 September, 2011;
originally announced September 2011.
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Observation of Landau level-like quantizations at 77 K along a strained-induced graphene ridge
Authors:
Lin He,
Hui Yan,
Yi Sun,
Jia-Cai Nie,
Moses H. W. Chan
Abstract:
Recent studies show that the electronic structures of graphene can be modified by strain and it was predicted that strain in graphene can induce peaks in the local density of states (LDOS) mimicking Landau levels (LLs) generated in the presence of a large magnetic field. Here we report scanning tunnelling spectroscopy (STS) observation of nine strain-induced peaks in LDOS at 77 K along a graphene…
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Recent studies show that the electronic structures of graphene can be modified by strain and it was predicted that strain in graphene can induce peaks in the local density of states (LDOS) mimicking Landau levels (LLs) generated in the presence of a large magnetic field. Here we report scanning tunnelling spectroscopy (STS) observation of nine strain-induced peaks in LDOS at 77 K along a graphene ridge created when the graphene layer was cleaved from a sample of highly oriented pyrolytic graphite (HOPG). The energies of these peaks follow the progression of LLs of massless 'Dirac fermions' (DFs) in a magnetic field of 230 T. The results presented here suggest a possible route to realize zero-field quantum Hall-like effects at 77 K.
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Submitted 23 August, 2011; v1 submitted 4 August, 2011;
originally announced August 2011.
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Effect of Exchange-type Zero-bias Anomaly on Single Electron Tunnelling of Au Nanoparticles
Authors:
Rui Xu,
Yi Sun,
Hui Yan,
Ji-Yong Yang,
Lin He,
Jia-Cai Nie,
Yadong Li
Abstract:
Using cryogenic scanning tunnelling microscopy and scanning tunnelling spectroscopy we measured single electron tunnelling of isolated Au nanoparticles with 1.4 nm in radius. We observe that a gap ΔV ~ 2e/C (C is the capacitance of the Au particle) around zero bias in the tunnelling conductance spectrum, followed by a series of discrete single electron tunnelling peaks with voltage widths of EC ~…
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Using cryogenic scanning tunnelling microscopy and scanning tunnelling spectroscopy we measured single electron tunnelling of isolated Au nanoparticles with 1.4 nm in radius. We observe that a gap ΔV ~ 2e/C (C is the capacitance of the Au particle) around zero bias in the tunnelling conductance spectrum, followed by a series of discrete single electron tunnelling peaks with voltage widths of EC ~ e/C at both negative and positive bias. Experimental data are well explained by taking into account the effect of exchange interaction of electrons on the single electron tunnelling of Au nanoparticles. A tunnelling peak near zero-bias was suppressed by the exchange-type zero-bias anomaly, which results in the gap ΔV ~ 2EC.
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Submitted 14 June, 2011;
originally announced June 2011.
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Effects of Mn and Ti do** on superconductivity and charge ordering in NaxCoO2 system
Authors:
Y. G. Shi,
H. X. Yang,
X. Liu,
W. J. Ma,
C. J. Nie,
W. W. Huang,
J. Q. Li
Abstract:
The superconductivity in Na0.3Co1-xMxO2.1.3H2O and the charge ordering in Na0.5Co1-xMxO2 have been investigated for M = Mn and Ti substituting for Co. We have first successfully synthesized the single-phase Na0.7Co1-xMxO2(M= Mn and Ti) materials with 0 < = x < = 0.1, then we obtained Na0.5Co1-xMxO2 (0 < = x < = 0.1, M = Mn and Ti) by Na deintercalation and Na0.3Co1-xMxO2.1.3H2O (0 < = x < = 0.1,…
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The superconductivity in Na0.3Co1-xMxO2.1.3H2O and the charge ordering in Na0.5Co1-xMxO2 have been investigated for M = Mn and Ti substituting for Co. We have first successfully synthesized the single-phase Na0.7Co1-xMxO2(M= Mn and Ti) materials with 0 < = x < = 0.1, then we obtained Na0.5Co1-xMxO2 (0 < = x < = 0.1, M = Mn and Ti) by Na deintercalation and Na0.3Co1-xMxO2.1.3H2O (0 < = x < = 0.1, M = Mn and Ti) by an additional water intercalations. X-ray diffraction measurements revealed that all samples are single-phase materials, their lattice parameters depend systematically on the Ti and Mn contents. Measurements of physical properties indicate that the superconductivity in Na0.3Co1-xMxO2.1.3H2O is suppressed evidently by Co-site do** and killed at x = 0.02 for Mn do** and x = 0.01 for Ti do**. Charge ordering and magnetic properties in Na0.5Co1-xMxO2 were also influenced by M-atom do**.
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Submitted 3 January, 2005;
originally announced January 2005.
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Structural Phase Transitions and Sodium Ordering in Na0.5CoO2: a Combined Electron Diffraction and Raman Spectroscopy Study
Authors:
H. X. Yang,
C. J. Nie,
Y. G. Shi,
H. C. Yu,
S. Ding,
Y. L. Liu,
D. Wu,
N. L. Wang,
J. Q. Li
Abstract:
The nonstoichiometric NaxCoO2 system exhibits extraordinary physical properties that correlate with temperature and Na concentration in its layered lattice without evident long-range structure modification when conventional crystallographic techniques are applied. For instance, Na0.7CoO2, a thermodynamically stable phase, shows large thermoelectric power; water-intercalated Na0.33CoO2.1.3H2O is…
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The nonstoichiometric NaxCoO2 system exhibits extraordinary physical properties that correlate with temperature and Na concentration in its layered lattice without evident long-range structure modification when conventional crystallographic techniques are applied. For instance, Na0.7CoO2, a thermodynamically stable phase, shows large thermoelectric power; water-intercalated Na0.33CoO2.1.3H2O is a newly discovered superconductor with Tc ~ 4K, and Na0.5CoO2 exhibits an unexpected charge ordering transition at around Tco ~ 55 K. Recent studies suggest that the transport and magnetic properties in the NaxCoO2 system strongly depend on the charge carrier density and local structural properties. Here we report a combined variable temperature transmission electron microscopy and Raman scattering investigation on structural transformations in Na0.5CoO2 single crystals. A series of structural phase transitions in the temperature range from 80 K to 1000 K are directly identified and the observed superstructures and modulated phases can be interpreted by Na-ordering. The Raman scattering measurements reveal phase separation and a systematic evolution of active modes along with phase transitions. Our work demonstrates that the high mobility and ordering of sodium cations among the CoO2 layers are a key factor for the presence of complex structural properties in NaxCoO2 materials, and also demonstrate that the combination of electron diffraction and Raman spectroscopy measurements is an efficient way for studying the cation ordering and phase transitions in related systems.
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Submitted 21 December, 2004;
originally announced December 2004.
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Phase separation, effects of magnetic field and high pressure on charge ordering in y-Na0.5CoO2
Authors:
H. X. Yang,
Y. G. Shi,
C. J. Nie,
D. Wu,
L. X. Yang,
C. Dong,
H. C. Yu,
H. R. Zhang,
C. Q. **,
J. Q. Li
Abstract:
Transmission electron microscopy observations reveal the presence of complex superstructures and remarkable phase separation in association with Na-ordering phenomenon in y-Na0.5CoO2. Resistivity and magnetization measurements indicate that three phase transitions at the temperatures of 25 K, 53 K and 90 K respectively appear commonly in y-Na0.5CoO2 samples. Under a high pressure up to 10 Kbar,…
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Transmission electron microscopy observations reveal the presence of complex superstructures and remarkable phase separation in association with Na-ordering phenomenon in y-Na0.5CoO2. Resistivity and magnetization measurements indicate that three phase transitions at the temperatures of 25 K, 53 K and 90 K respectively appear commonly in y-Na0.5CoO2 samples. Under a high pressure up to 10 Kbar, the low-temperature transport properties show certain changes below the charge order transition; under an applied magnetic field of 7 Tesla, phase transitions at around 25 K and 53 K, proposed fundamentally in connection with alternations of magnetic structure and charge ordering maintain almost unchanged.
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Submitted 21 December, 2004; v1 submitted 12 September, 2004;
originally announced September 2004.