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Ghost factors in Gauss-sum factorization with transmon qubits
Authors:
Lin Htoo Zaw,
Yuanzheng Paul Tan,
Long Hoang Nguyen,
Rangga P. Budoyo,
Kun Hee Park,
Zhi Yang Koh,
Alessandro Landra,
Christoph Hufnagel,
Yung Szen Yap,
Teck Seng Koh,
Rainer Dumke
Abstract:
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previousl…
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A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previously laid out in the literature. The presence of Type II ghost factors and the coherence time of the qubit set an upper limit for the total experiment time, and hence the largest factorizable number with this scheme. Discernability is a figure of merit introduced to characterize this behavior. We introduce preprocessing as a strategy to increase the discernability of a system, and demonstrate the technique with a transmon qubit. This can bring the total experiment time of the system closer to its decoherence limit, and increase the largest factorizable number.
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Submitted 8 December, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
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Overcharging of zinc ion in the structure of zinc finger protein is needed for DNA binding stability
Authors:
Ly Hai Nguyen,
Tuyen Thanh Tran,
Lien Ngoc Thi Truong,
Hanh Hong Mai,
Toan T. Nguyen
Abstract:
The zinc finger structure where a Zn2+ ion binds to 4 cysteine or histidine amino acids in a tetrahedral structure is very common motif of nucleic acid binding proteins. The corresponding interaction model is present in 3% of the genes of human genome. As a result, zinc finger has been shown to be extremely useful in various therapeutic and research capacities, as well as in biotechnology. In stab…
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The zinc finger structure where a Zn2+ ion binds to 4 cysteine or histidine amino acids in a tetrahedral structure is very common motif of nucleic acid binding proteins. The corresponding interaction model is present in 3% of the genes of human genome. As a result, zinc finger has been shown to be extremely useful in various therapeutic and research capacities, as well as in biotechnology. In stable configuration, the cysteine amino acids are deprotonated and become negatively charged. This means the Zn2+ ion is overscreened by 4 cysteine charges (overcharged). It is question of whether this overcharged configuration is also stable when such negatively charged zinc finger binds to negatively charged DNA molecule. Using all atom molecular dynamics simulation up to microsecond range of an androgen receptor protein dimer, we investigate how the deprotonated state of cysteine influences its structure, dynamics, and function in binding o DNA molecules. Our results show that the deprotonated state of cysteine residues are essential for mechanical stabilization of the functional, folded conformation. Not only this state stabilizes the protein structure, it also stabilizes the protein-DNA binding complex. The differences in structural and energetic properties of the two (sequence-identical) monomers are also investigated showing the strong influence of DNA on the structure of zinc fingers upon complexation. Our result has potential impact on better molecular understanding of one of the most common classes of zinc fingers
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Submitted 21 February, 2020; v1 submitted 23 November, 2019;
originally announced November 2019.
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Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions
Authors:
T. Huong Dang,
D. Quang To,
E. Erina,
T. L. Hoai Nguyen,
V. Safarov,
H. Jaffres,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in…
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We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.
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Submitted 25 July, 2017;
originally announced July 2017.
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Giant Forward Scattering Asymmetry and Anomalous Tunnel Hall effect at Spin-Orbit-and Exchange-Split Interfaces
Authors:
T. Huong Dang,
H. Jaffrès,
T. L. Hoai Nguyen,
H. -J. Drouhin
Abstract:
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of…
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We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we show that, when Dresselhaus interaction is included in the conduction band of antiparallel magnetized electrodes, the electrons can undergo a large difference of transmission depending on the sign of their incident in-plane wavevector. In particular, the transmission is fully quenched at some points of the Brillouin zone for specific in-plane wavevectors and not for the opposite. Moreover, it is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a 14 ? 14 band k ? p model showing, in addition, corresponding effects in the valence band and highlighting the robustness of the effect, which even persists for a single magnetic electrode. Upon tunneling, electrons undergo an asymmetrical deflection which results in the occurrence of a transverse current, giving rise to a so-called Tunnel Hall Effect.
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Submitted 2 September, 2015;
originally announced September 2015.
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Electric potential profile of a spherical soft particle with a charged core
Authors:
Anh D. Phan,
Dustin A. Tracy,
T. L. Hoai Nguyen,
N. A. Viet,
The-Long Phan,
Thanh H. Nguyen
Abstract:
The electrostatic potential profile of a spherical soft particle is derived by solving the Poisson-Boltzmann equations on a spherical system both numerically and analytically. The soft particle is assumed to consist of an ion-permeable charged outer layer and a non-permeable charged core with constant charged density. The contribution of the core to the potential profile is calculated for differen…
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The electrostatic potential profile of a spherical soft particle is derived by solving the Poisson-Boltzmann equations on a spherical system both numerically and analytically. The soft particle is assumed to consist of an ion-permeable charged outer layer and a non-permeable charged core with constant charged density. The contribution of the core to the potential profile is calculated for different charges and dielectric constants. Our results show that the charged core heavily influences the local potential within the soft particle. In contrast, the potential distribution outside the particle in the salt solution is found to be weakly dependent on the core features. These findings are consistent with previous experiments showing the minor impact of the core of the MS2 virus on its overall electrical properties. Our studies also indicate that while a change in temperature from 290 K to 310 K only slightly varies the potential, the ionic strength in the range of 1-600 mM has a significant effect on the potential profile. Our studies would provide good understanding for experimental research in the field of biophysics and nanomedicine.
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Submitted 4 December, 2013;
originally announced December 2013.
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Bounds on the volume fraction of 2-phase, 2-dimensional elastic bodies and on (stress, strain) pairs in composites
Authors:
Graeme Walter Milton,
Loc Hoang Nguyen
Abstract:
Bounds are obtained on the volume fraction in a two-dimensional body containing two elastically isotropic materials with known bulk and shear moduli. These bounds use information about the average stress and strain fields, energy, determinant of the stress, and determinant of the displacement gradient, which can be determined from measurements of the traction and displacement at the boundary. The…
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Bounds are obtained on the volume fraction in a two-dimensional body containing two elastically isotropic materials with known bulk and shear moduli. These bounds use information about the average stress and strain fields, energy, determinant of the stress, and determinant of the displacement gradient, which can be determined from measurements of the traction and displacement at the boundary. The bounds are sharp if in each phase certain displacement field components are constant. The inequalities we obtain also directly give bounds on the possible (average stress, average strain) pairs in a two-phase, two-dimensional, periodic or statistically homogeneous composite
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Submitted 29 August, 2011;
originally announced August 2011.
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Spin rotation, spin filtering, and spin transfer in directional tunneling through non-centrosymmetric semiconductor barriers
Authors:
T. L. Hoai Nguyen,
Henri-Jean Drouhin,
Jean-Eric Wegrowe,
Guy Fishman
Abstract:
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling proc…
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We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved. Along some crystallographic directions, the incident wave experiences spin filtering during the tunneling. These results open stimulating perspectives for spin manipulation in tunnel devices.
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Submitted 13 January, 2009; v1 submitted 8 July, 2008;
originally announced July 2008.
