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Modeling the computer memory based on the ferromagnet/superconductor multilayers
Authors:
Serhii E. Shafraniuk,
Ivan P. Nevirkovets,
Oleg A. Mukhanov
Abstract:
A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The building blocks of the memory are hybrid PS and SFT structures. The memory model is formulated in terms of the equation-defined PS and SFT devices integrated into the…
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A model of superconducting computer memory exploiting the orthogonal spin transfer (OST) in the pseudospin valve (PS) that is controlled by the three-terminal Josephson superconducting-ferromagnetic transistor (SFT) is developed. The building blocks of the memory are hybrid PS and SFT structures. The memory model is formulated in terms of the equation-defined PS and SFT devices integrated into the PS/SFT memory cell (MC) circuit. Logical units "0" and "1" are associated with the two PS states respectively characterized by two different values of resistance. Elementary logical operations comprising the read/write processes occur when a word pulse applied to the SFT's injector coincides with the respective bit pulse acting on MC. Physically, a word pulse triggers SFT to a resistive state, causing the PS switching between the logical "0" and "1" states. Thus, the whole switching dynamics of MC depends on the non-equilibrium and nonstationary properties of PS and SFT. Modeling the single MC as well as the larger MC-based circuits comprising respectively twelve and thirty elements suggest that such the memory cells can undergo ultrafast switching (sub-ns) and low energy consumption per operation (sub-100 fJ). The suggested model allows studying the influence of noises, punch-through effect, crosstalk, parasitic, etc. The obtained results suggest that the hybrid PS/SFT structures are well-suited to superconducting computing circuits as they are built of magnetic and non-magnetic transition metals and therefore have low impedances (1-30 Ohm).
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Submitted 13 July, 2019;
originally announced July 2019.
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Transduction between electrical energy and the heat in a carbon nanotube using a voltage-controlled do**
Authors:
T. Gupta,
I. P. Nevirkovets,
V. Chandrasekhar,
S. Shafranjuk
Abstract:
High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon transport limits their capability for transforming energy between the heat and electricity. Here we show that increasing the charge carrier concentrations not only l…
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High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon transport limits their capability for transforming energy between the heat and electricity. Here we show that increasing the charge carrier concentrations not only leads to an increase of both electric conductivity and Seebeck coeffcient, but also causes a substantial suppression of the thermal conductivity due to intensifying the phonon-electron collisions. A strong transduction effect corresponding to an effective electron temperature change ~115 K was observed in a CNT device, where the local gate electrodes have controlled the charge do** in the opposite ends. Transduction between the heat and the energy of the electron subsystem corresponds to an impressive figure of merit cold ZT ~ 6 and the transduced power density P ~ 80kW/cm2.
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Submitted 9 November, 2016;
originally announced November 2016.
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Electrical Characteristics of Superconducting-Ferromagnetic Transistors
Authors:
Ivan P. Nevirkovets,
Oleksandr Chernyashevskyy,
Georgy V. Prokopenko,
Oleg A. Mukhanov,
John B. Ketterson
Abstract:
We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS junctions serve as injectors in the SFIFSIS devices which have transistor-like properties; for this reason we call them Superconducting-Ferromagnetic Transistors (SFT…
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We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS junctions serve as injectors in the SFIFSIS devices which have transistor-like properties; for this reason we call them Superconducting-Ferromagnetic Transistors (SFTs). We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic (CVC) becomes linear. Furthermore, we investigated the DC and AC characteristics of SFTs of two types: ordinary devices with a single acceptor (SIS) junction, and devices with a double acceptor. In the first case, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For devices of the second type, we studied voltage amplification properties when the operating point was chosen in the sub-gap region of the acceptor CVC. By applying an AC signal (in the kHz range) while biasing the injector (SFIFS) junction with a constant DC current, we observed a voltage gain above 25 on the double acceptor. In the reverse transmission experiment, we applied DC current and an AC modulation to the acceptor junction and, within the accuracy of the experiment, observed no response on the injector junction, which implies an excellent input-output isolation in our SFIFSIS devices. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.
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Submitted 8 October, 2014;
originally announced October 2014.
