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Direct observation of phase change accommodating hydrogen uptake in bimetallic nanoparticles
Authors:
Livia P. Matte,
Maximilian Jaugstetter,
Tara P. Mishra,
Carlos Escudero,
Giuseppina Conti,
Slavomir Nemsak,
Fabiano Bernardi
Abstract:
Hydrogen is a promising alternative to fossil fuel, however storing it efficiently poses challenges. One promising solution is to adsorb hydrogen on solid materials demonstrating quasi-molecular bonding with hydrogen. The hydrogen adsorption energy can be tuned by changing the morphology or stoichiometry of bimetallic nanoparticles. Here we used complementary techniques to unveil the chemical comp…
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Hydrogen is a promising alternative to fossil fuel, however storing it efficiently poses challenges. One promising solution is to adsorb hydrogen on solid materials demonstrating quasi-molecular bonding with hydrogen. The hydrogen adsorption energy can be tuned by changing the morphology or stoichiometry of bimetallic nanoparticles. Here we used complementary techniques to unveil the chemical compositional and morphological transformation undergone by PdxNi100-x nanoparticles during H2 adsorption. Our findings reveal NiO-rich shell and Pd-rich core as confirmed by X-ray photoelectron spectroscopy, X-ray scattering, and electron energy loss spectroscopy. During hydrogen adsorption, which mainly occurs on Pd atoms, the Pd-rich core fragments into small pockets, increasing its surface area. This process is more pronounced for nanoparticles with lower Pd loading, emphasizing the role of NiO. These results shed light on the atomic changes occurring in the PdxNi100-x nanoparticles during hydrogen adsorption and can be applicable on multi-metallic systems to improve hydrogen storage properties.
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Submitted 10 June, 2024;
originally announced June 2024.
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Absence of strong magnetic fluctuations or interactions in the normal state of LaNiGa$_2$
Authors:
P. Sherpa,
I. Vinograd,
Y. Shi,
S. A. Sreedhar,
C. Chaffey,
T. Kissikov,
M. -C. Jung,
A. S. Bontana,
A. P. Dioguardi,
R. Yamamoto,
M. Hirata,
G. Conti,
S. Nemsak,
J. R. Badger,
P. Klavins,
I. Vishik,
V. Taufour,
N. J. Curro
Abstract:
We present nuclear magnetic (NMR) and qudrupole (NQR) resonance and magnetization data in the normal state of the topological crystalline superconductor LaNiGa$_2$. We find no evidence of magnetic fluctuations or enhanced paramagnetism. These results suggest that the time-reversal symmetry breaking previously reported in the superconducting state of this material is not driven by strong electron c…
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We present nuclear magnetic (NMR) and qudrupole (NQR) resonance and magnetization data in the normal state of the topological crystalline superconductor LaNiGa$_2$. We find no evidence of magnetic fluctuations or enhanced paramagnetism. These results suggest that the time-reversal symmetry breaking previously reported in the superconducting state of this material is not driven by strong electron correlations.
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Submitted 12 November, 2023;
originally announced November 2023.
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Elucidating the active phases of CoOx films on Au(111) in the CO Oxidation Reaction
Authors:
Hao Chen,
Lorenz J. Falling,
Heath Kersell,
George Yan,
Xiao Zhao,
Judit Oliver-Meseguer,
Slavomir Nemsak,
Adrian Hunt,
Iradwikanari Waluyo,
Hirohito Ogasawara,
Alexis Bell,
Philippe Sautet,
Miquel Salmeron
Abstract:
Using CoOx thin films supported on Au(111) single crystal surfaces as model catalysts for the CO oxidation reaction we show that three reaction regimes exist in response to chemical and topographic restructuring of the CoOx catalyst as a function of reactant gas phase CO/O2 stoichiometry a finding that highlights the versatility of catalysts and their evolution in response to reaction conditions.…
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Using CoOx thin films supported on Au(111) single crystal surfaces as model catalysts for the CO oxidation reaction we show that three reaction regimes exist in response to chemical and topographic restructuring of the CoOx catalyst as a function of reactant gas phase CO/O2 stoichiometry a finding that highlights the versatility of catalysts and their evolution in response to reaction conditions. Under oxygen-lean conditions and moderate temperatures (below 150C degrees) partially oxidized films containing CoO were found to be efficient catalysts. In contrast, stoichiometric CoO films containing only Co2+ form carbonates in the presence of CO that poison the reaction below 300 C degrees. Under oxygen-rich conditions a more oxidized catalyst phase forms containing Co3+ species that is effective in a wide temperature range. Resonant photoemission spectroscopy (ResPES) revealed the unique role of Co3+ sites in catalyzing the CO oxidation. DFT calculations provided deeper insights into the pathway and free energy barriers for the reactions on these oxide phases.
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Submitted 26 April, 2023;
originally announced April 2023.
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Copper migration and surface oxidation of $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$ in ambient pressure environments
Authors:
Adam L. Gross,
Lorenz Falling,
Matthew C. Staab,
Metzli I. Montero,
Rahim R. Ullah,
David M. Nisson,
Peter Klavins,
Kristie J. Koski,
Nicholas J. Curro,
Valentin Taufour,
Slavomir Nemsak,
Inna M. Vishik
Abstract:
Chemical modifications such as intercalation can be used to modify surface properties or to further functionalize the surface states of topological insulators. Using ambient pressure X-ray photoelectron spectroscopy, we report copper migration in $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$, which occurs on a timescale of hours to days after initial surface cleaving. The increase in near-surface copper p…
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Chemical modifications such as intercalation can be used to modify surface properties or to further functionalize the surface states of topological insulators. Using ambient pressure X-ray photoelectron spectroscopy, we report copper migration in $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$, which occurs on a timescale of hours to days after initial surface cleaving. The increase in near-surface copper proceeds along with the oxidation of the sample surface and large changes in the selenium content. These complex changes are further modelled with core-level spectroscopy simulations, which suggest a composition gradient near the surface which develops with oxygen exposure. Our results shed light on a new phenomenon that must be considered for intercalated topological insulators$\unicode{x2014}$and intercalated materials in general$\unicode{x2014}$that surface chemical composition can change when specimens are exposed to ambient conditions.
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Submitted 8 July, 2022;
originally announced July 2022.
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Emergent phenomena at oxide interfaces studied with standing-wave photoelectron spectroscopy
Authors:
C. -T. Kuo,
G. Conti,
J. E. Rault,
C. M. Schneider,
S. Nemšák,
A. X. Gray
Abstract:
Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. Electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet non-destructive techniques for probi…
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Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. Electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet non-destructive techniques for probing buried layers and interfaces with the required Angstrom-level resolution, as well as element and orbital specificity. In this review article, we survey several recent studies wherein soft x-ray standing-wave photoelectron spectroscopy, a relatively newly developed technique, is used to investigate buried oxide interfaces exhibiting emergent phenomena such as metal-insulator transition, interfacial ferromagnetism, and two-dimensional electron gas. Advantages, challenges, and future applications of this methodology are also discussed.
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Submitted 27 October, 2021;
originally announced October 2021.
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Understanding the roles of electronic effect in CO on Pt-Sn alloy surface via band structure measurements
Authors:
Jongkeun Jung,
Sungwoo Kang Laurent Nicolai,
Jisook Hong,
Jan Minár,
Inkyung Song,
Wonshik Kyung,
Soohyun Cho,
Beomseo Kim,
Jonathan D. Denlinger,
Francisco J. C. S. Aires,
Eric Ehret,
Philip N. Ross,
Jihoon Shim,
Slavomir Nemšák,
Doyoung Noh,
Seungwu Han,
Changyoung Kim,
Bong** S. Mun
Abstract:
Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption proce…
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Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption process. As the coverage of CO increases, the degree of charge transfer between CO and Pt shows clear difference to that of Pt-Sn. With comparison to DFT calculation results, the observed distinct features in the band structure are interpreted as backdonation bonding states of Pt molecular orbital to the 2π orbital of CO. Furthermore, the change in the surface charge concentration, measured from the Fermi surface area, shows Pt surface has a larger charge concentration change than Pt-Sn surface upon CO adsorption. The difference in the charge concentration change between Pt and Pt-Sn surfaces reflects the degree of electronic effects during CO adsorption on Pt-Sn.
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Submitted 9 August, 2021;
originally announced August 2021.
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High resolution depth profiling using near-total-reflection hard X-ray photoelectron spectroscopy
Authors:
Julien E. Rault,
Cheng-Tai Kuo,
Henrique P. Martins,
Giuseppina Conti,
Slavomir Nemšák
Abstract:
By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the ex…
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By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the experimental setup and specific data analysis process. We then review three different examples which show the broad application of this method. The emphasis is on its applications to correlated oxide heterostructures, especially quantitative depth analyses of compositions and electronic states. In a last part, we discussed the limitations of this technique, mostly in terms of range of samples which can be studied.
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Submitted 17 September, 2021; v1 submitted 14 July, 2021;
originally announced July 2021.
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Layer-Resolved Many-Electron Interactions in Delafossite PdCoO2 from Standing-Wave Photoemission Spectroscopy
Authors:
Qiyang Lu,
Henrique Martins,
J. Matthias Kahk,
Gaurab Rimal,
Seongshik Oh,
Inna Vishik,
Matthew Brahlek,
William C. Chueh,
Johannes Lischner,
Slavomir Nemsak
Abstract:
When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properti…
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When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO2, we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured valence band spectrum into contributions from Pd and CoO2 layers. Computationally, we find that many-body interactions in Pd and CoO2 layers are highly different. Holes in the CoO2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.
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Submitted 6 May, 2021;
originally announced May 2021.
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Hard x-ray standing-wave photoemission study of the interfaces in a BiFeO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ superlattice
Authors:
H. P. Martins,
S. A. Khan,
G. Conti,
A. A. Greer,
A. Y. Saw,
G. K. Palsson,
M. Huijben,
K. Kobayashi,
S. Ueda,
C. M. Schneider,
I. M. Vishik,
J. Minár,
A. X. Gray,
C. S. Fadley,
S. Nemšák
Abstract:
Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states.…
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Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states. Here we report high-resolution depth resolved chemical and electronic investigation of BFO/LSMO superlattice using standing-wave hard X-ray photoemission spectroscopy in the first-order Bragg as well as near-total-reflection geometry. Our results show that the interfaces of BFO on top of LSMO are atomically abrupt, while the LSMO on top of BFO interfaces show an interdiffusion length of around 1.2 unit cells. The two interfaces also exhibit different chemical gradients, with the BFO/LSMO interface being Sr-terminated by a spectroscopically distinctive high binding energy component in Sr 2p core-level spectra, which is spatially contained within 1 unit cell from the interface. From the electronic point of view, unique valence band features were observed for bulk-BFO, bulk-LSMO and their interfaces. Our X-ray optical analysis revealed a unique electronic signature at the BFO/LSMO interface, which we attribute to the coupling between those respective layers. Valence band decomposition based on the Bragg-reflection standing-wave measurement also revealed the band alignment between BFO and LSMO layers. Our work demonstrates that standing-wave hard x-ray photoemission is a reliable non-destructive technique for probing depth-resolved electronic structure of buried layers and interfaces with sub-unit-cell resolution. Equivalent investigations can be successfully applied to a broad class of material such as perovskite complex oxides with emergent interfacial phenomena.
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Submitted 14 December, 2020;
originally announced December 2020.
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Bulk Electronic Structure of Lanthanum Hexaboride (LaB6) by Hard X-ray Angle-Resolved Photoelectron Spectroscopy
Authors:
A. Rattanachata,
L. Nicolaï,
H. P. Martins,
G. Conti,
M. J. Verstraete,
M. Gehlmann,
S. Ueda,
K. Kobayashi,
I. Vishik,
C. M. Schneider,
C. S. Fadley,
A. X. Gray,
J. Minár,
S. Nemšák
Abstract:
In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemissi…
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In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. By comparing La 3d core level spectra to cluster model calculations, we identify well-screened peak residing at a lower binding energy compared to the main poorly-screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. We show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulk-like band structure of LaB$_6$ determined by hard x-ray angle-resolved photoemission spectroscopy (HARPES). We interpret HARPES experimental results by the free-electron final-state calculations and by the more precise one-step photoemission theory including matrix element and phonon excitation effects. In addition, we consider the nature and the magnitude of phonon excitations in HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that one step theory of photoemission and HARPES experiments provide, at present, the only approach capable of probing true bulk-like electronic band structure of rare-earth hexaborides and strongly correlated materials.
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Submitted 6 January, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Electrostatic potential map** at ferroelectric domain walls by low-temperature photoemission electron microscopy
Authors:
J. Schaab,
K. Shapovalov,
P. Schoenherr,
J. Hackl,
M. I. Khan,
M. Hentschel,
Z. Yan,
E. Bourret,
C. M. Schneider,
S. Nemsák,
M. Stengel,
A. Cano,
D. Meier
Abstract:
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic…
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Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential map**, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec.
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Submitted 14 January, 2020;
originally announced January 2020.
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Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Yu-Cheng Shao,
Yi-De Chuang,
Jaap Geessinck,
Mark Huijben,
Jean-Pascal Rueff,
Ismael L. Graff,
Giuseppina Conti,
Yingying Peng,
Aaron Bostwick,
Eli Rotenberg,
Eric Gullikson,
Slavomír Nemšák,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Giacomo Ghiringhelli,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a c…
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The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation of the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques, standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within 3 unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first 3 unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
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Submitted 29 October, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
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Hard x-ray standing-wave photoemission insights into the structure of an epitaxial Fe/MgO multilayer magnetic tunnel junction
Authors:
C. S. Conlon,
G. Conti,
S. Nemšák,
G. Palsson,
R. Moubah,
C. -T. Kuo,
M. Gehlmann,
J. Ciston,
J. Rault,
J. -P. Rueff,
F. Salmassi,
W. Stolte,
A. Rattanachata,
S. -C. Lin,
A. Keqi,
A. Saw,
B. Hjörvarsson,
C. S. Fadley
Abstract:
The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for…
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The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for this system. We have thus applied hard x-ray photoemission spectroscopy (HXPS) and standing-wave (SW) HXPS in the few keV energy range to probe the structure of an epitaxially-grown MgO/Fe superlattice. The superlattice consists of 9 repeats of MgO grown on Fe by magnetron sputtering on an MgO (001) substrate, with a protective Al2O3 cap** layer. We determine through SW-HXPS that 8 of the 9 repeats are similar and ordered, with a period of 33 $\pm$ 4 angstrom, with minor presence of FeO at the interfaces and a significantly distorted top bilayer with ca. 3 times the oxidation of the lower layers at the top MgO/Fe interface. There is evidence of asymmetrical oxidation on the top and bottom of the Fe layers. We find agreement with dark-field scanning transmission electron microscope (STEM) and x-ray reflectivity measurements. Through the STEM measurements we confirm an overall epitaxial stack with dislocations and war** at the interfaces of ca. 5 angstrom. We also note a distinct difference in the top bilayer, especially MgO, with possible Fe inclusions. We thus demonstrate that SW-HXPS can be used to probe deep buried interfaces of novel magnetic devices with few angstrom precision.
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Submitted 25 June, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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An Efficient Algorithm for Automatic Structure Optimization in X-ray Standing-Wave Experiments
Authors:
Osman Karslıoğlu,
Mathias Gehlmann,
Juliane Müller,
Slavomir Nemšák,
James A. Sethian,
Ajith Kaduwela,
Hendrik Bluhm,
Charles Fadley
Abstract:
X-ray standing-wave photoemission experiments involving multilayered samples are emerging as unique probes of the buried interfaces that are ubiquitous in current device and materials research. Such data require for their analysis a structure optimization process comparing experiment to theory that is not straightforward. In this work, we present a new computer program for optimizing the analysis…
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X-ray standing-wave photoemission experiments involving multilayered samples are emerging as unique probes of the buried interfaces that are ubiquitous in current device and materials research. Such data require for their analysis a structure optimization process comparing experiment to theory that is not straightforward. In this work, we present a new computer program for optimizing the analysis of standing-wave data, called SWOPT, that automates this trial-and-error optimization process. The program includes an algorithm that has been developed for computationally expensive problems: so-called black-box simulation optimizations. It also includes a more efficient version of the Yang X-ray Optics Program (YXRO) [Yang, S.-H., Gray, A.X., Kaiser, A.M., Mun, B.S., Sell, B.C., Kortright, J.B., Fadley, C.S., J. Appl. Phys. 113, 1 (2013)] which is about an order of magnitude faster than the original version. Human interaction is not required during optimization. We tested our optimization algorithm on real and hypothetical problems and show that it finds better solutions significantly faster than a random search approach. The total optimization time ranges, depending on the sample structure, from minutes to a few hours on a modern laptop computer, and can be up to 100x faster than a corresponding manual optimization. These speeds make the SWOPT program a valuable tool for realtime analyses of data during synchrotron experiments.
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Submitted 4 July, 2018;
originally announced July 2018.
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Interface properties and built-in potential profile of a LaCrO$_3$/SrTiO$_3$ superlattice determined by standing-wave excited photoemission spectroscopy
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Ryan B. Comes,
Julien E. Rault,
Jean-Pascal Rueff,
Slavomir Nemšák,
Amina Taleb,
Jeffrey B. Kortright,
Julia Meyer-Ilse,
Eric Gullikson,
Peter V. Sushko,
Steven R. Spurgeon,
Mathias Gehlmann,
Mark E. Bowden,
Lukasz Plucinski,
Scott A. Chambers,
Charles S. Fadley
Abstract:
LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of…
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LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) map** of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges.
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Submitted 31 August, 2018; v1 submitted 27 February, 2018;
originally announced February 2018.
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In aqua electrochemistry probed by XPEEM: experimental setup, examples, and challenges
Authors:
Slavomír Nemšák,
Evgheni Strelcov,
Hongxuan Guo,
Brian D. Hoskins,
Tomáš Duchoň,
David N. Mueller,
Alexander Yulaev,
Ivan Vlassiouk,
Alexander Tselev,
Claus M. Schneider,
Andrei Kolmakov
Abstract:
Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science spectromicroscopy tools, such as X-ray photoelectron spectroscopy (XPS), photoemission electron microscopy (PEEM), and scanning electron microscopy (SEM) to be applied to study solid-liquid and liquid-gas interfaces. Here, we focus on the experimental i…
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Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science spectromicroscopy tools, such as X-ray photoelectron spectroscopy (XPS), photoemission electron microscopy (PEEM), and scanning electron microscopy (SEM) to be applied to study solid-liquid and liquid-gas interfaces. Here, we focus on the experimental implementation of PEEM to probe electrified graphene-liquid interfaces using electrolyte-filled microchannel arrays as a new sample platform. We demonstrate the important methodological advantage of these multi-sample arrays: they enable the combination of the wide field of view hyperspectral imaging capabilities from PEEM with the use of powerful data mining algorithms to reveal spectroscopic and temporal behaviors at the level of the individual microsample or the entire array ensemble
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Submitted 7 February, 2018;
originally announced February 2018.
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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Authors:
Slavomír Nemšák,
Mathias Gehlmann,
Cheng-Tai Kuo,
Shih-Chieh Lin,
Christoph Schlueter,
Ewa Mlynczak,
Tien-Lin Lee,
Lukasz Plucinski,
Hubert Ebert,
Igor Di Marco,
Ján Minár,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal do** produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5%…
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The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal do** produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
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Submitted 12 September, 2018; v1 submitted 19 January, 2018;
originally announced January 2018.
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Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy
Authors:
G. Conti,
S. Nemšák,
C. -T. Kuo,
M. Gehlmann,
C. Conlon,
A. Keqi,
A. Rattanachata,
O. Karslıoğlu,
J. Mueller,
J. Sethian,
H. Bluhm,
J. E. Rault,
J. P. Rueff,
H. Fang,
A. Javey,
C. S. Fadley
Abstract:
Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By co…
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Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.
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Submitted 16 January, 2018;
originally announced January 2018.
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Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition
Authors:
Paul C. Rogge,
Ravini U. Chandrasena,
Antonio Cammarata,
Robert J. Green,
Padraic Shafer,
Benjamin M. Lefler,
Amanda Huon,
Arian Arab,
Elke Arenholz,
Ho Nyung Lee,
Tien-Lin Lee,
Slavomír Nemšák,
James M. Rondinelli,
Alexander X. Gray,
Steven J. May
Abstract:
We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functi…
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We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ~5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates.
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Submitted 1 February, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Atomic-layer-resolved composition and electronic structure of the cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from soft x-ray standing-wave photoemission
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giuseppina Conti,
Shu-Ting Pi,
Luca Moreschini,
Aaron Bostwick,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Slavomir Nemšák,
Julien E. Rault,
Patrick Le Fèvre,
François Bertran,
Andrés F. Santander-Syro,
Ivan A. Vartanyants,
Warren E. Pickett,
Romuald Saint-Martin,
Amina Taleb,
Charles S. Fadley
Abstract:
A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties…
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A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties. Applying SW photoemission to Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the supermodulation structure--as determined by comparison to DFT calculations, by Ca-Sr intermixing, and by the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large-c represent a promising future direction.
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Submitted 24 September, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission
Authors:
Armela Keqi,
Mathias Gehlmann,
Giuseppina Conti,
Slavomir Nemšák,
Arunothai Rattanachata,
Jan Minár,
Lukasz Plucinski,
Julien E Rault,
Jean-Pascal Rueff,
Mike Scarpulla,
Mihael Hategan,
Gunnar K Pálsson,
Catherine Conlon,
Daria Eiteneer,
Alexander Y Saw,
Alexander X Gray,
Keisuke Kobayashi,
Shigenori Ueda,
Oscar D Dubon,
Claus M Schneider,
Charles S Fadley
Abstract:
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to und…
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We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between $Ga_{0.98}Mn_{0.02}P$ and $GaP$ in both angle-resolved and angle-integrated valence spectra. The $Ga_{0.98}Mn_{0.02}P$ bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host $GaP$ crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of $Ga_{0.97}Mn_{0.03}As$ and $GaAs$ (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in do** both $GaAs$ and $GaP$.
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Submitted 14 January, 2018;
originally announced January 2018.
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Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator
Authors:
M. Marinova,
J. E. Rault,
A. Gloter,
S. Nemsak,
G. K. Palsson,
J. -P. Rueff,
C. S. Fadley,
C. Carretero,
H. Yamada,
K. March,
V. Garcia,
S. Fusil,
A. Barthelemy,
O. Stephan,
C. Colliex,
M. Bibes
Abstract:
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly kn…
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The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total-reflection hard X-ray photoemission spectroscopy, and ab-initio theory to address this issue. We achieve a direct, quantitative, atomic-scale characterization of the polarization-induced charge density changes at the interface between the ferroelectric BiFeO3 and the doped Mott insulator Ca1-xCexMnO3, thus providing insight on how interface-engineering can enhance these switching effects.
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Submitted 30 August, 2017;
originally announced August 2017.
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Direct observation of the band gap transition in atomically thin ReS$_2$
Authors:
Mathias Gehlmann,
Irene Aguilera,
Gustav Bihlmayer,
Slavomír Nemšák,
Philipp Nagler,
Pika Gospodarič,
Giovanni Zamborlini,
Markus Eschbach,
Vitaliy Feyer,
Florian Kronast,
Ewa Młyńczak,
Tobias Korn,
Lukasz Plucinski,
Christian Schüller,
Stefan Blügel,
Claus M. Schneider
Abstract:
ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic…
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ReS$_2$ is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of the van der Waals compound ReS$_2$ leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS$_2$ using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS$_2$ are - contrary to assumptions in recent literature - significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing a significantly increased effective electron mass in single-layer crystals. We also find that only bilayer ReS$_2$ has a direct band gap. Our results establish bilayer ReS$_2$ as a advantageous building block for two-dimensional devices and van der Waals heterostructures.
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Submitted 14 February, 2017;
originally announced February 2017.
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The Effects of Spin-Excitons on the Surface States of SmB6: A Photoemission Study
Authors:
Arian Arab,
A. X. Gray,
S. Nemsak,
D. V. Evtushinsky,
C. M. Schneider,
Dae-Jeong Kim,
Zachary Fisk,
P. F. S. Rosa,
T. Durakiewicz,
P. S. Riseborough
Abstract:
We present the results of high-resolution valence-band photoemission spectroscopic study of SmB6 which shows evidence for a V-shaped density of states of surface origin within the bulk gap. The spectroscopy data is interpreted in terms of the existence of heavy 4f surface states, which may be useful in resolving the controversy concerning the disparate surface Fermi-surface velocities observed in…
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We present the results of high-resolution valence-band photoemission spectroscopic study of SmB6 which shows evidence for a V-shaped density of states of surface origin within the bulk gap. The spectroscopy data is interpreted in terms of the existence of heavy 4f surface states, which may be useful in resolving the controversy concerning the disparate surface Fermi-surface velocities observed in experiments. Most importantly, we find that the temperature dependence of the valence-band spectrum indicates that a small feature appears at a binding energy of about -9 meV at low temperatures. We attribute this feature to a resonance caused by the spin-exciton scattering in SmB6 which destroys the protection of surface states due to time-reversal invariance and spin-momentum locking. The existence of a low-energy spin-exciton may be responsible for the scattering which suppresses the formation of coherent surface quasi-particles and the appearance of the saturation of the resistivity to temperatures much lower than the coherence temperature associated with the opening of the bulk gap.
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Submitted 21 November, 2016;
originally announced November 2016.
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Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory
Authors:
Johannes Lischner,
Slavomir Nemsak,
Giuseppina Conti,
Andrei Gloskovskii,
Gunnar Karl Palsson,
Claus M. Schneider,
Wolfgang Drube,
Steven G. Louie,
Charles Fadley
Abstract:
We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray ph…
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We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.
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Submitted 18 April, 2016;
originally announced April 2016.
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Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission
Authors:
D. Eiteneer,
G. K. Pálsson,
S. Nemšák,
A. X. Gray,
A. M. Kaiser,
J. Son,
J. LeBeau,
G. Conti,
A. A. Greer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
E. Rotenberg,
E. M. Gullikson,
S. Ueda,
K. Kobayashi,
A. Janotti,
C. G. Van de Walle,
A. Blanca-Romero,
R. Pentcheva,
C. M. Schneider,
S. Stemmer,
C. S. Fadley
Abstract:
LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understan…
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LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.
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Submitted 27 May, 2016; v1 submitted 22 October, 2015;
originally announced October 2015.
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Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$
Authors:
S. Nemšák,
G. Conti,
G. K. Pálsson,
C. Conlon,
S. Cho,
J. Rault,
J. Avila,
M. -C. Asensio,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
L. Balents,
C. M. Schneider,
S. Stemmer,
C. S. Fadley`
Abstract:
For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)…
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For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening.
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Submitted 20 November, 2015; v1 submitted 13 August, 2015;
originally announced August 2015.
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Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
Authors:
S. Nemšák,
G. Conti,
A. X. Gray,
G. K. Pálsson,
C. Conlon,
D. Eiteneer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
L. Moreschini,
V. Strocov,
M. Kobayashi,
W. Stolte,
S. Ueda,
K. Kobayashi,
A. Gloskovskii,
W. Drube,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
S. Borek
, et al. (10 additional authors not shown)
Abstract:
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consist…
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The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry.
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Submitted 9 March, 2016; v1 submitted 7 August, 2015;
originally announced August 2015.
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Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling
Authors:
Johannes Lischner,
G. K. Palsson,
Derek Vigil-Fowler,
S. Nemsak,
J. Avila,
M. C. Asensio,
C. S. Fadley,
S. G. Louie
Abstract:
We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes…
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We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Green's function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations.
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Submitted 29 April, 2015;
originally announced April 2015.
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Functional Materials for Information and Energy Technology: Insights by Photoelectron Spectroscopy
Authors:
Martina Müller,
Slavomir Nemsak,
Lukasz Plucinski,
Claus M. Schneider
Abstract:
The evolution of both information and energy technology is intimately connected to complex condensed matter systems, the properties of which are determined by electronic and chemical interactions and processes on a broad range of length and time scales. Dedicated photoelectron spectroscopy and spectromicroscopy experiments can provide important insights. We discuss some recent methodological devel…
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The evolution of both information and energy technology is intimately connected to complex condensed matter systems, the properties of which are determined by electronic and chemical interactions and processes on a broad range of length and time scales. Dedicated photoelectron spectroscopy and spectromicroscopy experiments can provide important insights. We discuss some recent methodological developments with application to relevant questions in spintronics, and towards in-operando studies of resistive switching and electrochemical processes.
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Submitted 18 March, 2015; v1 submitted 2 March, 2015;
originally announced March 2015.
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Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Authors:
Hui Fang,
Corsin Battaglia,
Carlo Carraro,
Slavomir Nemsak,
Burak Ozdol,
Jeong Seuk Kang,
Hans A. Bechtel,
Sujay B. Desai,
Florian Kronast,
Ahmet A. Unal,
Giuseppina Conti,
Catherine Conlon,
Gunnar K. Palsson,
Michael C. Martin,
Andrew M. Minor,
Charles S. Fadley,
Eli Yablonovitch,
Roya Maboudian,
Ali Javey
Abstract:
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,…
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Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.
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Submitted 14 April, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.