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Thin film TaAs: develo** a platform for Weyl semimetal devices
Authors:
Jocienne N. Nelson,
Anthony D. Rice,
Rafal Kurleto,
Amanda Shackelford,
Zachary Sierzega,
Chun-Sheng Jiang,
Andrew G. Norman,
Megan E. Holtz,
John S. Mangum,
Ian A. Leahy,
Karen N. Heinselman,
Herve Ness,
Mark Van Schilfgaarde,
Daniel S. Dessau,
Kirstin Alberi
Abstract:
MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential to enable device applications. We synthesize TaAs…
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MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential to enable device applications. We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure, using angle-resolved photoemission spectroscopy, Kelvin probe microscopy and transmission electron microscopy. Our results provide a roadmap and platform for develo** 3D WSMs for device applications.
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Submitted 9 March, 2023;
originally announced March 2023.
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Direct link between disorder, mobility and magnetoresistance in topological semimetals
Authors:
Jocienne N. Nelson,
Anthony D. Rice,
Chase Brooks,
Ian A. Leahy,
Glenn Teeter,
Mark Van Schilfgaarde,
Stephan Lany,
Brian Fluegel,
Minhyea Lee,
Kirstin Alberi
Abstract:
The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the r…
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The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the role of disorder on electron transport behavior. We find that arsenic vacancies introduce localized states near the Fermi level and strongly influence the electron mobility. Reducing arsenic vacancies by changing the As/Cd flux ratio used during deposition results in an increase in the magnetoresistance from 200%-1000% and an increase in mobility from 5000-18,000 cm$^2$/Vs. However, the degree of linear magnetoresistance, which has previously been linked to disorder, is found here to correlate inversely with measures of disorder, including disorder potential and disorder correlation lengths. This finding yields important new information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.
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Submitted 20 June, 2022;
originally announced June 2022.
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X-ray Nano-imaging of Defects in Thin Film Catalysts via Cluster Analysis
Authors:
Aileen Luo,
Oleg Yu. Gorobtsov,
Jocienne N. Nelson,
Ding-Yuan Kuo,
Ziming Shao,
Ryan Bouck,
Mathew Cherukara,
Martin V. Holt,
Kyle M. Shen,
Darrell G. Schlom,
** Suntivich,
Andrej Singer
Abstract:
Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects rem…
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Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects remain challenging to detect and localize using nanodiffraction, due to their weak diffuse scattering. Here we apply an unsupervised machine learning clustering algorithm to isolate the low-intensity diffuse scattering in as-grown and alkaline-treated thin epitaxially strained SIO films. We pinpoint the defect locations, find additional strain variation in the morphology of electrochemically cycled SIO, and interpret the defect type by analyzing the diffraction profile through clustering. Our findings demonstrate the use of a machine learning clustering algorithm for identifying and characterizing hard-to-find crystallographic defects in thin films of electrocatalysts and highlight the potential to study electrochemical reactions at defect sites in operando experiments.
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Submitted 9 January, 2023; v1 submitted 18 March, 2022;
originally announced March 2022.
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Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO$_3$
Authors:
Brendan D. Faeth,
Saien Xie,
Shuolong Yang,
Jason K. Kawasaki,
Jocienne N. Nelson,
Shuyuan Zhang,
Pramita Mishra,
Chen Li,
Christopher Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Darrell G. Schlom,
Kyle M. Shen
Abstract:
The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO$_3$, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO$_3$ substrate might…
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The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO$_3$, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO$_3$ substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer FeSe/SrTiO$_3$, where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings between the higher-order replicas, as well as other self-energy effects, allow us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of $λ= 0.19 \pm 0.02$.
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Submitted 5 February, 2021;
originally announced February 2021.
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Incoherent Cooper pairing and pseudogap behavior in single-layer FeSe/SrTiO$_3$
Authors:
Brendan D. Faeth,
Shuolong Yang,
Jason K. Kawasaki,
Jocienne N. Nelson,
Pramita Mishra,
Li Chen,
Darrell G. Schlom,
Kyle M. Shen
Abstract:
In many unconventional superconductors, the presence of a pseudogap - a suppression in the electronic density of states extending above the critical temperature - has been a long-standing mystery. Here, we employ combined \textit{in situ} electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements to reveal an unprecedentedly large pseudogap regime in single-layer FeSe/…
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In many unconventional superconductors, the presence of a pseudogap - a suppression in the electronic density of states extending above the critical temperature - has been a long-standing mystery. Here, we employ combined \textit{in situ} electrical transport and angle-resolved photoemission spectroscopy (ARPES) measurements to reveal an unprecedentedly large pseudogap regime in single-layer FeSe/SrTiO$_3$, an interfacial superconductor where incoherent Cooper pairs are initially formed above $T_Δ$ $\approx$ 60 K, but where a zero resistance state is only achieved below $T_{0}$ $<$ 30 K. We show that this behavior is accompanied by distinct transport signatures of two-dimensional phase fluctuating superconductivity, suggesting a mixed vortex state hosting incoherent Cooper pairs which persist well above the maximum clean limit $T_{c}$ of $\approx$ 40 K. Our work establishes the critical role of reduced dimensionality in driving the complex interplay between Cooper pairing and phase coherence in two-dimensional high-$T_c$ superconductors, providing a paradigm for understanding and engineering higher-$T_{c}$ interfacial superconductors.
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Submitted 22 October, 2020;
originally announced October 2020.
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Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films
Authors:
Arnab Bose,
Jocienne N. Nelson,
Xiyue S. Zhang,
Rakshit Jain,
D. G. Schlom,
D. C. Ralph,
D. A. Muller,
K. M. Shen,
R. A. Buhrman
Abstract:
Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fund…
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Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fundamental studies of the spin currents that can arise from robust, intrinsic spin-orbit interaction (SOI) effects in more exotic systems including topological insulators, transition metal dichalcogenides with broken crystalline symmetry, Weyl and Dirac semimetals where gapless electronic excitations are protected by topology and symmetry. Here we experimentally study strong SOT from the topological semimetal IrO2 in (001) and (110) normal films, which exhibit distinctly different SHE strengths. Angle resolved photoemission spectroscopy studies have shown IrO2 exhibits Dirac nodal lines (DNL) in the band structure, which could enable a very high spin Hall conductivity (SHC). The (001) films exhibit exceptionally high dam** like torque efficiency ranging from 0.45 at 293 K to 0.65 at 30 K which sets the lower bound of SHC that is ten times higher and of opposite sign than the theoretical prediction. We observe a substantial reduction of SHC in anisotropically strained (110) films, which suggests that the DNLs that are present in the (001) films and contribute to SHC, are disrupted and gapped due to the large anisotropic strain in (110) films, which in turn significantly lowers SHC. Very large value of SHC at room temperature of this Dirac semimetal could be very promising for the practical application.
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Submitted 8 June, 2020;
originally announced June 2020.
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Strain-stabilized superconductivity
Authors:
Jacob P. Ruf,
Hanjong Paik,
Nathaniel J. Schreiber,
Hari P. Nair,
Ludi Miao,
Jason K. Kawasaki,
Jocienne N. Nelson,
Brendan D. Faeth,
Yonghun Lee,
Berit H. Goodge,
Betül Pamuk,
Craig J. Fennie,
Lena F. Kourkoutis,
Darrell G. Schlom,
Kyle M. Shen
Abstract:
Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendip…
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Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the first instance of the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO$_{2}$ thin films on (110)-oriented TiO$_{2}$ substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of $d$ orbitals.
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Submitted 13 May, 2020;
originally announced May 2020.
