Showing 1–17 of 17 results for author: Nelson, C T

Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films

Authors: Alessandro R. Mazza, Jason Lapano, Harry M. Meyer III, Christopher T. Nelson, Tyler Smith, Yun-Yi Pai, Kyle Noordhoek, Benjamin J. Lawrie, Timothy R. Charlton, Robert G. Moore, T. Zac Ward, Mao-Hua Du, Gyula Eres, Matthew Brahlek

Abstract: Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for develo** novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface ox… ▽ More Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for develo** novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material. △ Less

Submitted 22 May, 2022; originally announced May 2022.

Comments: Accepted in Advanced Functional Materials

Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy

Authors: Jason Lapano, Yun-Yi Pai, Alessandro Mazza, Jie Zhang, Tamara Isaacs-Smith, Patrick Gemperline, Lizhi Zhang, Haoxiang Li, Ho Nyung Lee, Hu Miao, Gyula Eres, Mina Yoon, Ryan Comes, T. Zac Ward, Benjamin J. Lawrie, Michael McGuire, Robert G. Moore, Christopher T. Nelson, Andrew May, Matthew Brahlek

Abstract: Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled supercon… ▽ More Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled superconductor Pd3Bi2Se2 on SrTiO3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi controls the formation of Pd3Bi2Se2 due to the combined volatility of Bi, Se, and Bi-Se bonded phases. The resulting films are shown to be of high structural quality, the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibit a superconducting transition temperature of 800 mK and critical field of 17.7 +/- 0.5 mT, as probed by transport as well as magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides opens a vast space for discovering new phenomena as well as enabling new applications. △ Less

Submitted 25 October, 2021; v1 submitted 14 July, 2021; originally announced July 2021.

Journal ref: APL Materials 9, 101110 (2021)

Electric Field Control of Chirality

Authors: Piush Behera, Molly A. May, Fernando Gómez-Ortiz, Sandhya Susarla, Sujit Das, Christopher T. Nelson, Lucas Caretta, Shang-Lin Hsu, Margaret R. McCarter, Benjamin H. Savitzky, Edward S. Barnard, Archana Raja, Zijian Hong, Pablo García-Fernandez, Stephen W. Lovesey, Gerrit van der Laan, Colin Ophus, Lane W. Martin, Javier Junquera, Markus B. Raschke, Ramamoorthy Ramesh

Abstract: Polar textures have attracted significant attention in recent years as a promising analog to spin-based textures in ferromagnets. Here, using optical second harmonic generation based circular dichroism, we demonstrate deterministic and reversible control of chirality over mesoscale regions in ferroelectric vortices using an applied electric field. The microscopic origins of the chirality, the path… ▽ More Polar textures have attracted significant attention in recent years as a promising analog to spin-based textures in ferromagnets. Here, using optical second harmonic generation based circular dichroism, we demonstrate deterministic and reversible control of chirality over mesoscale regions in ferroelectric vortices using an applied electric field. The microscopic origins of the chirality, the pathway during the switching, and the mechanism for electric-field control are described theoretically via phase-field modeling and second-principles simulations, and experimentally by examination of the microscopic response of the vortices under an applied field. The emergence of chirality from the combination of non-chiral materials and subsequent control of the handedness with an electric field has far-reaching implications for new electronics based on chirality as a field controllable order parameter. △ Less

Submitted 28 May, 2021; originally announced May 2021.

Comments: 19 pages, 4 figures Supplement: 27 pages, 13 figures

Unsupervised learning of ferroic variants from atomically resolved STEM images

Authors: Mani Valleti, Sergei V. Kalinin, Christopher T. Nelson, Jonathan J. P. Peters, Wen Dong, Richard Beanland, Xiaohang Zhang, Ichiro Takeuchi, Maxim Ziatdinov

Abstract: An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since material… ▽ More An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since materials and microscope distortions preclude the use of an ideal lattice as a reference point. The applicability of unsupervised clustering and dimensionality reduction methods is explored and are shown to produce clusters dominated by chemical and microscope effects, with a large number of classes required to establish the presence of rotational variants. Comparatively, the rVAE allows extraction of the angle corresponding to the orientation of ferroic variants explicitly, enabling straightforward identification of the ferroic variants as regions with constant or smoothly changing latent variables and sharp orientational changes. This approach allows further exploration of the chemical variability by separating the rotational degrees of freedom via rVAE and searching for remaining variability in the system. The code used in the manuscript is available at https://github.com/saimani5/ferroelectric_domains_rVAE. △ Less

Submitted 20 June, 2022; v1 submitted 18 January, 2021; originally announced January 2021.

Comments: 19 pages, 7 Figures

Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data

Authors: Christopher T. Nelson, Rama K. Vasudevan, Xiaohang Zhang, Maxim Ziatdinov, Eugene A. Eliseev, Ichiro Takeuchi, Anna N. Morozovska, Sergei V. Kalinin

Abstract: The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting material… ▽ More The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models. Here, we explore the physics of the ferroelectric domain walls in BiFeO3 using this method, and derive the posterior estimates of relevant parameters. More generally, this inference approach both allows learning materials physics from experimental data with associated uncertainty quantification, and establishing guidelines for instrumental development answering questions on what resolution and information limits are necessary for reliable observation of specific physical mechanisms of interest. △ Less

Submitted 26 January, 2021; v1 submitted 21 April, 2020; originally announced April 2020.

Comments: Upload the accepted version

Journal ref: Nature Communications 11, Article number: 6361 (2020)

Exploiting Colorimetry for Fidelity in Data Visualization

Authors: M. J. Waters, J. M. Walker, C. T. Nelson, D. Joester, J. M. Rondinelli

Abstract: Advances in multimodal characterization methods fuel a generation of increasing immense hyper-dimensional datasets. Color map** is employed for conveying higher dimensional data in two-dimensional (2D) representations for human consumption without relying on multiple projections. How one constructs these color maps, however, critically affects how accurately one perceives data. For simple scalar… ▽ More Advances in multimodal characterization methods fuel a generation of increasing immense hyper-dimensional datasets. Color map** is employed for conveying higher dimensional data in two-dimensional (2D) representations for human consumption without relying on multiple projections. How one constructs these color maps, however, critically affects how accurately one perceives data. For simple scalar fields, perceptually uniform color maps and color selection have been shown to improve data readability and interpretation across research fields. Here we review core concepts underlying the design of perceptually uniform color map and extend the concepts from scalar fields to two-dimensional vector fields and three-component composition fields frequently found in materials-chemistry research to enable high-fidelity visualization. We develop the software tools PAPUC and CMPUC to enable researchers to utilize these colorimetry principles and employ perceptually uniform color spaces for rigorously meaningful color map** of higher dimensional data representations. Last, we demonstrate how these approaches deliver immediate improvements in data readability and interpretation in microscopies and spectroscopies routinely used in discerning materials structure, chemistry, and properties. △ Less

Submitted 27 February, 2020; originally announced February 2020.

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

Authors: Anna N. Morozovska, Eugene A. Eliseev, Deyang Chen, Vladislav Shvetz, Christopher T. Nelson, Sergei V. Kalinin

Abstract: The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled map** of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this mate… ▽ More The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled map** of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this material and their behavior at surfaces and interfaces. Here, we use the thermodynamic Landau-Ginzburg-Devonshire (LGD) approach to explain the emergence of spatially modulated phases (SMP) in La0.22Bi0.78FeO3 films, and establish that the change of polarization gradient coefficients caused by La-do** is the primary driving mechanisms. The suppression, or "melting", of the SMP in the vicinity of the domain wall surface junction is observed experimentally and simulated in the framework of LGD theory. The melting originated from the system tendency to minimize electrostatic energy caused by long-range stray electric fields outside the film and related depolarization effects inside it. The observed behavior provides insight to the origin of surface and interface behaviors in multiferroics. △ Less

Submitted 13 October, 2019; originally announced October 2019.

Comments: 27 pages, 6 figures, 3 tables an suppl. mat with 3 figures

Journal ref: Phys. Rev. B 102, 075426 (2020)

Building Free Energy Functional from Atomically-Resolved Imaging: Atomic Scale Phenomena in La-doped BiFeO3

Authors: Anna N. Morozovska, Eugene A. Eliseev, Deyang Chen, Christopher T. Nelson, Sergei V. Kalinin

Abstract: Scanning Transmission Electron Microscopy (STEM) has enabled map** of atomic structures of solids with sub-pm precision, providing insight to the physics of ferroic phenomena and chemical expansion. However, only a subset of information is available, due to projective nature of imaging in the beam direction. Correspondingly, the analysis often relies on the postulated known form of macroscopic L… ▽ More Scanning Transmission Electron Microscopy (STEM) has enabled map** of atomic structures of solids with sub-pm precision, providing insight to the physics of ferroic phenomena and chemical expansion. However, only a subset of information is available, due to projective nature of imaging in the beam direction. Correspondingly, the analysis often relies on the postulated known form of macroscopic Landau-Ginzburg energy, and some predefined relationship between experimentally determined atomic coordinates and the order parameter field. Here, we propose an approach for exploring the structure of ferroics using reduced order parameter models constructed based on experimental data only. We develop a four sublattices model (FSM) for the analytical description of A-cation displacement in (anti)ferroelectric-antiferrodistortive perovskites of ABO3-type. The model describes the displacements of cation A in four neighboring unit cells and determines the conditions of different structural phases appearance and stability in ABO3. We show that FSM explains the coexistence of rhombohedral (R), orthorhombic (O) and spatially modulated (SM) phases, observed by atomic-resolution STEM in La-doped BiFeO3. Using this approach, we atomically resolve and theoretically model the sublattice asymmetry inherent to the case of the A-site La/Bi cation sublattice in LaxBi1-xFeO3 polymorphs. This approach allows exploring the ferroics behaviors from experimental data only, without additional assumptions on the nature of the order parameter. △ Less

Submitted 24 May, 2019; v1 submitted 8 March, 2019; originally announced March 2019.

Comments: 20 pages, 4 figures, supplementary materials

Journal ref: Phys. Rev. B 99, 195440 (2019)

A high-energy density antiferroelectric made by interfacial electrostatic engineering

Authors: Julia A. Mundy, Colin A. Heikes, Bastien F. Grosso, Dan Ferenc Segedin, Zhe Wang, Berit H. Goodge, Quintin N. Meier, Christopher T. Nelson, Bhagwati Prasad, Lena F. Kourkoutis, William D. Ratcliff, Nicola A. Spaldin, Ramamoorthy Ramesh, Darrell G. Schlom

Abstract: Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the low storage capacity of conventional dielectric materials. To mitigate this issue, antiferroelectric materials have been proposed, but relatively few families of… ▽ More Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the low storage capacity of conventional dielectric materials. To mitigate this issue, antiferroelectric materials have been proposed, but relatively few families of antiferroelectric materials have been identified to date. Here, we propose a new design strategy for the construction of lead-free antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. We show that by confining atomically-precise thin layers of BiFeO3 in a dielectric matrix that we can induce a metastable antiferroelectric structure. Application of an electric field reversibly switches between this new phase and a ferroelectric state, in addition, tuning of the dielectric layer causes coexistence of the ferroelectric and antiferroelectric states. Precise engineering of the structure generates an antiferroelectric phase with energy storage comparable to that of the best lead-based materials. The use of electrostatic confinement provides a new pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses. △ Less

Submitted 22 December, 2018; originally announced December 2018.

Comments: 17 pages, 4 figures

Intrinsic structural instabilities of domain walls driven by gradient couplings: meandering anferrodistortive-ferroelectric domain walls in BiFeO3

Authors: Eugene A. Eliseev, Anna N. Morozovska, Christopher T. Nelson, Sergei V. Kalinin

Abstract: Using Landau-Ginzburg-Devonshire approach, we predict the intrinsic instability of the ferroelectric-ferroelastic domain walls in the multiferroic BiFeO3 emerging from the interplay between the gradient terms of the antiferrodistortive and ferroelectric order parameters at the walls. These instabilities are the interface analogue of the structural instabilities in the vicinity of phase coexistence… ▽ More Using Landau-Ginzburg-Devonshire approach, we predict the intrinsic instability of the ferroelectric-ferroelastic domain walls in the multiferroic BiFeO3 emerging from the interplay between the gradient terms of the antiferrodistortive and ferroelectric order parameters at the walls. These instabilities are the interface analogue of the structural instabilities in the vicinity of phase coexistence in the bulk; and so they do not steam from incomplete polarization screening in thin films or its spatial confinement, electrostrictive or flexoelectric coupling. The effect of BiFeO3 material parameters on the 71 degree, 109 degree, and 180 degree walls is explored, and it is shown that the meandering instability appears at 109 degree, and 180 degree walls for small gradient energies, and the walls become straight and broaden for higher gradients. In contrast to the 180 degree and 109 degree domain walls, uncharged 71 degree walls are always straight, and their width increases with increasing the tilt gradient coefficient. The wall instability and associated intrinsic meandering provide a new insight into the behavior of morphotropic and relaxor materials, wall pinning, and mechanisms of interactions between order parameter fields and local microstructure. △ Less

Submitted 31 December, 2018; v1 submitted 15 October, 2018; originally announced October 2018.

Comments: 37 pages, 12 figures, 2 tables

The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter

Authors: Dongyang Wan, Yongliang Zhao, Yao Cai, Teguh Citra Asmara, Zhen Huang, Jianqiang Chen, **dui Hong, Christopher T. Nelson, Mallikarjuna Rao Motapothula, Bixing Yan, Rong Xu, Haimei Zheng, Ariando, Andrivo Rusydi, Andrew Minor, Mark B. H. Breese, Mark Asta, Qinghua Xu, T. Venkatesan

Abstract: Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of th… ▽ More Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr$_{1-x}$NbO$_3$, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of the visible light absorption in these powders was reported to be due to an interband transition and the charge carrier separation was proposed to be due to the high carrier mobility of this material. In the current work we have prepared epitaxial thin films of Sr$_{0.94}$NbO$_{3+δ}$ and found that the bandgap of this material is ~4.1 eV, which is very large. Surprisingly the carrier density of the conducting phase reaches 10$^{22}$ cm$^{-3}$, which is only one order smaller than that of elemental metals and the carrier mobility is only 2.47 cm$^2$/(V$\cdot$s). Contrary to earlier reports, the visible light absorption at 1.8 eV (~688 nm) is due to the bulk plasmon resonance, arising from the large carrier density, instead of an interband transition. Excitation of the plasmonic resonance results in a multifold enhancement of the lifetime of charge carriers. Thus we propose that the hot charge carriers generated from decay of plasmons produced by optical absorption is responsible for the water splitting efficiency of this material under visible light irradiation. △ Less

Submitted 31 July, 2016; originally announced August 2016.

Correcting nonlinear drift distortion of scanning probe microscopy from image pairs with orthogonal scan directions

Authors: Colin Ophus, Chris T Nelson, Jim Ciston

Abstract: Unwanted motion of the probe with respect to the sample is a ubiquitous problem in scanning probe microscopy, causing both linear and nonlinear artifacts in experimental images. We have designed a procedure to correct these artifacts by using orthogonal scan pairs to align each measurement line-by-line along the slow scan direction. We demonstrate the accuracy of our algorithm on both synthetic an… ▽ More Unwanted motion of the probe with respect to the sample is a ubiquitous problem in scanning probe microscopy, causing both linear and nonlinear artifacts in experimental images. We have designed a procedure to correct these artifacts by using orthogonal scan pairs to align each measurement line-by-line along the slow scan direction. We demonstrate the accuracy of our algorithm on both synthetic and experimental data and provide an implementation of our method. △ Less

Submitted 1 July, 2015; originally announced July 2015.

Comments: 10 pages, 6 figures, LINK to supplementary material

Room-temperature antiferromagnetic memory resistor

Authors: X. Marti, I. Fina, C. Frontera, Jian Liu, P. Wadley, Q. He, R. J. Paull, J. D. Clarkson, J. Kudrnovský, I. Turek, J. Kuneš, D. Yi, J. -H. Chu, C. T. Nelson, L. You, E. Arenholz, S. Salahuddin, J. Fontcuberta, T. Jungwirth, R. Ramesh

Abstract: The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach… ▽ More The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Symmetry-Tunable Environment in Functional Ferroic Heterostructures

Authors: C. Becher, M. Trassin, M. Lilienblum, C. T. Nelson, S. J. Suresha, D. Yi, P. Yu, R. Ramesh, M. Fiebig, D. Meier

Abstract: We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on or off by layer-selective electric-field poling. The functionality of this process is monitored by optical second harmonic generation. The generalization of ou… ▽ More We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on or off by layer-selective electric-field poling. The functionality of this process is monitored by optical second harmonic generation. The generalization of our approach to other materials and symmetries is considered. We thus establish ferroic trilayer structures as device components in which symmetry-driven charge-, spin-, and strain-related functionalities can be activated and deactivated at will. △ Less

Submitted 22 August, 2013; originally announced August 2013.

Journal ref: Nature Communications 5, 4295 (2014)

Strong vortex pinning in Co-doped BaFe2As2 single crystal thin films

Authors: C. Tarantini, S. Lee, Y. Zhang, J. Jiang, C. W. Bark, J. D. Weiss, A. Polyanskii, C. T. Nelson, H. W. Jang, C. M. Folkman, S. H. Baek, X. Q. Pan, A. Gurevich, E. E. Hellstrom, C. B. Eom, D. C. Larbalestier

Abstract: We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correl… ▽ More We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correlated c-axis pinning, Jc for field along the c-axis exceeds Jc for H//ab plane, inverting the expectation of the Hc2 anisotropy. HRTEM reveals that the strong vortex pinning is due to a high density of nanosize columnar defects. △ Less

Submitted 27 February, 2010; originally announced March 2010.

Comments: 10 pages, 6 figures

Journal ref: Appl. Phys. Lett. 96, 142510 (2010)

Template engineering of Co-doped BaFe2As2 single-crystal thin films

Authors: S. Lee, J. Jiang, C. T. Nelson, C. W. Bark, J. D. Weiss, C. Tarantini, H. W. Jang, C. M. Folkman, S. H. Baek, A. Polyanskii, D. Abraimov, A. Yamamoto, Y. Zhang, X. Q. Pan, E. E. Hellstrom, D. C. Larbalestier, C. B. Eom

Abstract: Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template… ▽ More Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template engineering using single-crystal intermediate layers of (001) SrTiO3 and BaTiO3 grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe2As2 with high transition temperature (zero resistivity Tc of 21.5K), small transition widths (delta Tc = 1.3K), superior Jc of 4.5 MA/cm2 (4.2K, self field) and strong c-axis flux pinning. Implementing SrTiO3 or BaTiO3 templates to match the alkaline earth layer in the Ba-122 with the alkaline earth-oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multi-functional single crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin film overlayers. △ Less

Submitted 1 October, 2009; originally announced October 2009.

Journal ref: Nature Materials, 9, 397-402 (2010)

Weak-link behavior of grain boundaries in superconducting Ba(Fe1-xCox)2As2 bicrystals

Authors: S. Lee, J. Jiang, J. D. Weiss, C. M. Folkman, C. W. Bark, C. Tarantini, A. Xu, D. Abraimov, A. Polyanskii, C. T. Nelson, Y. Zhang, S. H. Baek, H. W. Jang, A. Yamamoto, F. Kametani, X. Q. Pan, E. E. Hellstrom, A. Gurevich, C. B. Eom, D. C. Larbalestier

Abstract: We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cupra… ▽ More We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cuprates and pnictides because of competing orders, low carrier density, and unconventional pairing symmetry. △ Less

Submitted 16 November, 2009; v1 submitted 21 July, 2009; originally announced July 2009.

Comments: To appear in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 212505 (2009)