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Flat Bands at the Fermi Level in Unconventional Superconductor YFe2Ge2
Authors:
R. Kurleto,
C. -H. Wu,
S. Acharya,
D. M. Narayan,
B. S. Berggren,
P. Hao,
A. Shackelford,
H. R. Whitelock,
Z. Sierzega,
M. Hashimoto,
D. Lu,
C. Jozwiak,
R. P. Cline,
D. Pashov,
J. Chen,
M. van Schilfgaarde,
F. M. Grosche,
D. S. Dessau
Abstract:
We report heavy electron behavior in unconventional superconductor YFe$_2$Ge$_2$ ($T_C \,{=}\, 1.2$ K). We directly observe very heavy bands ($m_\mathrm{eff}\sim 25 m_e$) within $\sim$10 meV of the Fermi level $E_{F}$ using angle-resolved photoelectron spectroscopy (ARPES). The flat bands reside at the X points of the Brillouin zone and are composed principally of $d_{xz}$ and $d_{yz}$ orbitals. W…
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We report heavy electron behavior in unconventional superconductor YFe$_2$Ge$_2$ ($T_C \,{=}\, 1.2$ K). We directly observe very heavy bands ($m_\mathrm{eff}\sim 25 m_e$) within $\sim$10 meV of the Fermi level $E_{F}$ using angle-resolved photoelectron spectroscopy (ARPES). The flat bands reside at the X points of the Brillouin zone and are composed principally of $d_{xz}$ and $d_{yz}$ orbitals. We utilize many-body perturbative theory, GW, to calculate the electronic structure of this material, obtaining excellent agreement with the ARPES data with relatively minor band renormalizations and band shifting required. We obtain further agreement at the Dynamical Mean Field Theory (DMFT) level, highlighting the emergence of the many-body physics at low energies (near $E_F$) and temperatures.
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Submitted 15 November, 2023;
originally announced November 2023.
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Potential Lifshitz transition at optimal substitution in nematic pnictide Ba$_{1-x}$Sr$_x$Ni$_2$As$_2$
Authors:
Dushyant M. Narayan,
Peipei Hao,
Rafał Kurleto,
Bryan S. Berggren,
A. Garrison Linn,
Christopher Eckberg,
Prathum Saraf,
John Collini,
Peter Zavalij,
Makoto Hashimoto,
Donghui Lu,
Rafael M. Fernandes,
Johnpierre Paglione,
Daniel S. Dessau
Abstract:
BaNi$_2$As$_2$ is a structural analog of the pnictide superconductor BaFe$_2$As$_2$, which, like the iron-based superconductors, hosts a variety of ordered phases including charge density waves (CDWs), electronic nematicity, and superconductivity. Upon isovalent Sr substitution on the Ba site, the charge and nematic orders are suppressed, followed by a sixfold enhancement of the superconducting tr…
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BaNi$_2$As$_2$ is a structural analog of the pnictide superconductor BaFe$_2$As$_2$, which, like the iron-based superconductors, hosts a variety of ordered phases including charge density waves (CDWs), electronic nematicity, and superconductivity. Upon isovalent Sr substitution on the Ba site, the charge and nematic orders are suppressed, followed by a sixfold enhancement of the superconducting transition temperature ($T_c$). To understand the mechanisms responsible for enhancement of $T_c$, we present high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements of the Ba$_{1-x}$Sr$_{x}$Ni$_2$As$_2$ series, which agree well with our density functional theory (DFT) calculations throughout the substitution range. Analysis of our ARPES-validated DFT results indicates a Lifshitz transition and reasonably nested electron and hole Fermi pockets near optimal substitution where $T_c$ is maximum. These nested pockets host Ni $d_{xz}$/$d_{yz}$ orbital compositions, which we associate with the enhancement of nematic fluctuations, revealing unexpected connections to the iron-pnictide superconductors. This gives credence to a scenario in which nematic fluctuations drive an enhanced $T_c$.
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Submitted 19 October, 2023;
originally announced October 2023.
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Universal Non-Polar Switching in Carbon-doped Transition Metal Oxides (TMOs) and Post TMOs
Authors:
C. A. Paz de Araujo,
Jolanta Celinska,
Chris R. McWilliams,
Lucian Shifren,
Greg Yeric,
X. M. Henry Huang,
Saurabh Vinayak Suryavanshi,
Glen Rosendale,
Valeri Afanas'ev,
Eduardo C. Marino,
Dushyant Madhav Narayan,
Daniel S Dessau
Abstract:
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. O…
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Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of carbon-based impurity states inside the existing larger bandgap effectively creating a smaller bandgap which we suggest could enable Mott-like correlation effect. Our findings indicate new insights for yet to be understood unipolar and nonpolar resistive switching in the TMOs and PTMOs. We have shown that device switching is not thermal-energy dependent and have developed an electronic-dominated switching model that allows for the extreme temperature operation (from 1.5 K to 423 K) and state retention up to 673 K for a 1-hour bake. Importantly, we have optimized the technology in an industrial process and demonstrated integrated 1-transistor/1-resistor (1T1R) arrays up to 1 kbit with 47 nm devices on 300 mm wafers for advanced node CMOS-compatible correlated electron RAM (CeRAM). These devices are shown to operate with 2 ns write pulses and retain the memory states up to 200 C for 24 hours. The collection of attributes shown, including scalability to state-of-the-art dimensions, non-volatile operation to extreme low and high temperatures, fast write, and reduced stochasticity as compared to filamentary memories such as ReRAMs show the potential for a highly capable two-terminal back-end-of-line non-volatile memory.
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Submitted 15 April, 2022;
originally announced April 2022.
