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Flexomagnetoelectric effect in Sr2IrO4 thin films
Authors:
Xin Liu,
Ting Hu,
Yujun Zhang,
Xueli Xu,
Biao Wu,
Zongwei Ma,
Peng Lv,
Yuelin Zhang,
Shih-Wen Huang,
Jialu Wu,
**g Ma,
Jiawang Hong,
Zhigao Sheng,
Chenglong Jia,
Erjun Kan,
Ce-Wen Nan,
**xing Zhang
Abstract:
Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybr…
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Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybridization along z axis. Thus, emergent polar phase and out-of-plane magnetic moment have been simultaneously observed in these asymmetric Sr2IrO4 thin films, which both are absent in its ground state. Furthermore, upon the application of magnetic field, such polarization can be controlled by modifying the occupied d orbitals through spin-orbit interaction, giving rise to a flexomagnetoelectric effect. This work provides a general strategy to artificially design multiple symmetries and ferroic orderings in strongly correlated systems.
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Submitted 9 January, 2024;
originally announced January 2024.
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Multifunctional magnetic oxide-MoS$_2$ heterostructures on silicon
Authors:
Allen Jian Yang,
Liang Wu,
Yanran Liu,
Xinyu Zhang,
Kun Han,
Ying Huang,
Shengyao Li,
Xian Jun Loh,
Qiang Zhu,
Rui Su,
Ce-Wen Nan,
X. Renshaw Wang
Abstract:
Correlated oxides and related heterostructures are intriguing for develo** future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates wi…
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Correlated oxides and related heterostructures are intriguing for develo** future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS$_2$ heterostructures. The LSMO-MoS$_2$ heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS$_2$ heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS$_2$ heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS$_2$ heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.
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Submitted 11 October, 2023;
originally announced October 2023.
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Deep Learning Illuminates Spin and Lattice Interaction in Magnetic Materials
Authors:
Teng Yang,
Zefeng Cai,
Zhengtao Huang,
Wenlong Tang,
Ruosong Shi,
Andy Godfrey,
Hanxing Liu,
Yuanhua Lin,
Ce-Wen Nan,
Meng Ye,
LinFeng Zhang,
Han Wang,
Ben Xu
Abstract:
Atomistic simulations hold significant value in clarifying crucial phenomena such as phase transitions and energy transport in materials science. Their success stems from the presence of potential energy functions capable of accurately depicting the relationship between system energy and lattice changes. In magnetic materials, two atomic scale degrees of freedom come into play: the lattice and the…
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Atomistic simulations hold significant value in clarifying crucial phenomena such as phase transitions and energy transport in materials science. Their success stems from the presence of potential energy functions capable of accurately depicting the relationship between system energy and lattice changes. In magnetic materials, two atomic scale degrees of freedom come into play: the lattice and the spin. However, accurately tracing the simultaneous evolution of both lattice and spin in magnetic materials at an atomic scale is a substantial challenge. This is largely due to the complexity involved in depicting the interaction energy precisely, and its influence on lattice and spin-driving forces, such as atomic force and magnetic torque, which continues to be a daunting task in computational science. Addressing this deficit, we present DeepSPIN, a versatile approach that generates high-precision predictive models of energy, atomic forces, and magnetic torque in magnetic systems. This is achieved by integrating first-principles calculations of magnetic excited states with deep learning techniques via active learning. We thoroughly explore the methodology, accuracy, and scalability of our proposed model in this paper. Our technique adeptly connects first-principles computations and atomic-scale simulations of magnetic materials. This synergy presents opportunities to utilize these calculations in devising and tackling theoretical and practical obstacles concerning magnetic materials.
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Submitted 18 August, 2023; v1 submitted 19 April, 2023;
originally announced April 2023.
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Anomalous Thermal Transport of SrTiO$_3$ Driven by Anharmonic Phonon Renormalization
Authors:
Jian Han,
Changpeng Lin,
Ce-wen Nan,
Yuan-hua Lin,
Ben Xu
Abstract:
SrTiO$_3$ has been extensively investigated owing to its abundant degrees of freedom for modulation. However, the microscopic mechanism of thermal transport especially the relationship between phonon scattering and lattice distortion during the phase transition are missing and unclear. Based on deep-potential molecular dynamics and self-consistent \textit{ab initio} lattice dynamics, we explore th…
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SrTiO$_3$ has been extensively investigated owing to its abundant degrees of freedom for modulation. However, the microscopic mechanism of thermal transport especially the relationship between phonon scattering and lattice distortion during the phase transition are missing and unclear. Based on deep-potential molecular dynamics and self-consistent \textit{ab initio} lattice dynamics, we explore the lattice anharmonicity-induced tetragonal-to-cubic phase transition and explain this anomalous behavior during the phase transition. Our results indicate the significant role of the renormalization of third-order interatomic force constants to second-order terms. Our work provides a robust framework for evaluating the thermal transport properties during structural transformation, benefitting the future design of promising thermal and phononic materials and devices.
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Submitted 14 March, 2023;
originally announced March 2023.
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Photocarrier Transport of Ferroelectric Photovoltaic Thin Films Detected by the Magnetic Dynamics of Adjacent Ferromagnetic Layers
Authors:
Yujun Zhang,
Ji Ma,
Keisuke Ikeda,
Yasuyuki Hirata,
Kohei Yamagami,
Christian Schüßler-Langeheine,
Niko Pontius,
Yuanhua Lin,
Cewen Nan,
Hiroki Wadati
Abstract:
We have observed photocarrier transport behaviors in BiFeO$_3$/La$_{1-x}$Sr$_x$MnO$_3$~(BFO/LSMO) heterostructures by using time-resolved synchrotron x-ray magnetic circular dichroism in reflectivity. The magnetization of LSMO layers was used as a probe of photo-induced carrier dynamics in the photovoltaic BFO layers. During the photo-induced demagnetization process, the decay time of LSMO~($x$=0.…
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We have observed photocarrier transport behaviors in BiFeO$_3$/La$_{1-x}$Sr$_x$MnO$_3$~(BFO/LSMO) heterostructures by using time-resolved synchrotron x-ray magnetic circular dichroism in reflectivity. The magnetization of LSMO layers was used as a probe of photo-induced carrier dynamics in the photovoltaic BFO layers. During the photo-induced demagnetization process, the decay time of LSMO~($x$=0.2) magnetization strongly depends on the ferroelectric polarization direction of the BFO layer. The variation of decay time should be attributed to the different sign of accumulated photocarriers at the BFO/LSMO interface induced by the photovoltaic effect of the BFO layer. The photocarriers can reach the BFO/LSMO interface and influence the magnetization distribution in the LSMO layers within the timescale of $\sim$100~ps. Our results provide a novel strategy to investigate carrier dynamics and mechanisms of optical control of magnetization in thin film heterostructures.
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Submitted 9 February, 2023;
originally announced February 2023.
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Significant Unconventional Anomalous Hall Effect in Heavy Metal/Antiferromagnetic Insulator Heterostructures
Authors:
Yuhan Liang,
Liang Wu,
Minyi Dai,
Yujun Zhang,
Qinghua Zhang,
Jie Wang,
Nian Zhang,
Wei Xu,
Le Zhao,
Hetian Chen,
Ji Ma,
Jialu Wu,
Yanwei Cao,
Di Yi,
**g Ma,
Wanjun Jiang,
Jia-Mian Hu,
Ce-Wen Nan,
Yuan-Hua Lin
Abstract:
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal (HM)/antiferromagnetic (AFM) insulator (AFMI) heterostructures at high temperatures yet disappears at low temperatures. In this paper, we report that an unconventional high-te…
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The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal (HM)/antiferromagnetic (AFM) insulator (AFMI) heterostructures at high temperatures yet disappears at low temperatures. In this paper, we report that an unconventional high-temperature AHE in HM/AFMI is observed only around the Néel temperature of AFM, with large anomalous Hall resistivity up to 40 n$Ω$ cm. This mechanism is attributed to the emergence of a noncollinear AFM spin texture with a non-zero net topological charge. Atomistic spin dynamics simulation shows that such a unique spin texture can be stabilized by the subtle interplay among the collinear AFM exchange coupling, interfacial Dyzaloshinski-Moriya interaction, thermal fluctuation, and bias magnetic field.
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Submitted 13 January, 2023;
originally announced January 2023.
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Path-integral Bosonization of $d=2$ PT symmetric models
Authors:
C. M. Naón,
F. A. Schaposnik
Abstract:
We discuss bosonization of non-Hermitian PT invariant fermion models in $d=2$ space-time dimensions within the path-integral approach in which the generating functionals associated to the fermion and boson models can be related. We first discuss the PT symmetric Thirring-sine-Gordon connection and then extend the treatment to bosonize the Gross-Neveu model.
We discuss bosonization of non-Hermitian PT invariant fermion models in $d=2$ space-time dimensions within the path-integral approach in which the generating functionals associated to the fermion and boson models can be related. We first discuss the PT symmetric Thirring-sine-Gordon connection and then extend the treatment to bosonize the Gross-Neveu model.
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Submitted 5 November, 2022;
originally announced November 2022.
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Highly sensitive strain sensor from topological-structure modulated dielectric elastic nanocomposites
Authors:
Youjun Fan,
Zhonghui Shen,
Xinchen Zhou,
Zhenkang Dan,
Le Zhou,
Weibin Ren,
Tongxiang Tang,
Shanyong Bao,
Cewen Nan,
Yang Shen
Abstract:
Flexible strain sensors are critical to several potential intelligent applications, such as human-machine interfaces, soft robotics, human motion detection, and safety monitoring of components. Stretchable functional materials are important components of strain sensors, and they are still major challenges for high performance strain sensors. Herein, we demonstrate a novel strategy of designing and…
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Flexible strain sensors are critical to several potential intelligent applications, such as human-machine interfaces, soft robotics, human motion detection, and safety monitoring of components. Stretchable functional materials are important components of strain sensors, and they are still major challenges for high performance strain sensors. Herein, we demonstrate a novel strategy of designing and optimizing flexible strain sensor by develo** topological structure modulated high permittivity elastic nanocomposite. The topological structure with three-phase percolative nano-nanonetworks produces synergistic effects of space charge enhancement and local electric field modulation, and it gives rise to an ultrahigh dielectric permittivity (113.4, at 1 kHz, over 1500% enhancement than that of commercial elastic polyurethane matrix) and excellent comprehensive electromechanical performance, and the optimal comprehensive electromechanical performance reaches to 542.91 MPa-1, which is over 9-fold than that of commercial polyurethane elastic film. An interdigital capacitive strain sensor is designed using the topological structured elastic dielectric nanocomposite. It possesses high initial capacitance density and positive capacitance response with stain, achieving high signal-to-noise ratio, high capacitance response sensitivity, and wide linear range, and it breaks through disadvantages of negative sensitivity and narrow linear range for conventional interdigital strain sensors. The prepared integrated strain sensor arrays are able to measure local strain of convoluted surfaces and monitor the motion of soft actuators in real time, and they would make conditions for intelligent control systems and the study of morphological intelligence.
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Submitted 10 October, 2021;
originally announced October 2021.
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Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
Authors:
M. H. Shao,
H. F. Liu,
R. He,
X. M. Li,
L. Wu,
J. Ma,
X. C. Hu,
R. T. Zhao,
Z. C. Zhong,
Y. Yu,
C. H. Wan,
Y. Yang,
C. -W. Nan,
X. D. Bai,
T. -L. Ren,
X. Renshaw Wang
Abstract:
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polariz…
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Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polarization remains to be elucidated. Here we report reversibly electrochemical control of ferroelectricity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) heterostructures with a mixed ionic-electronic LaSrMnO$_3$ electrode, achieving a hard breakdown field more than 18 MV/cm, over fourfold as high as that of typical HZO. The electrical extraction and insertion of oxygen into HZO is macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multiple polarization states and even repeatedly repaired the damaged ferroelectricity by reversed negative electric fields. Our study demonstrates the robust and switchable ferroelectricity in hafnia oxide distinctly associated with oxygen vacancy and opens up opportunities to recover, manipulate, and utilize rich ferroelectric functionalities for advanced ferroelectric functionality to empower the existing Si-based electronics such as multi-bit storage.
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Submitted 20 June, 2021;
originally announced June 2021.
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Interfacial-hybridization-modified Ir Ferromagnetism and Electronic Structure in LaMnO$_3$/SrIrO$_3$ Superlattices
Authors:
Yujun Zhang,
Yong Zheng Luo,
Liang Wu,
Motohiro Suzuki,
Yasuyuki Hirata,
Kohei Yamagami,
Kou Takubo,
Keisuke Ikeda,
Kohei Yamamoto,
Akira Yasui,
Naomi Kawamura,
Chun Lin,
Keisuke Koshiishi,
Xin Liu,
**xing Zhang,
Yasushi Hotta,
X. Renshaw Wang,
Atsushi Fujimori,
Yuanhua Lin,
Cewen Nan,
Lei Shen,
Hiroki Wadati
Abstract:
Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichro…
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Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichroism and photoemission spectra evidence the systematic change of the Ir ferromagnetism and the electronic structure with the change of the SL repetition period. First-principles calculations further reveal the mechanism of the SL-period dependence of the interfacial electronic structure and the local properties of the Ir moments, confirming that the formation of Ir-Mn molecular orbital is responsible for the interfacial coupling effects. The SL-period dependence of the ratio between spin and orbital components of the Ir magnetic moments can be attributed to the realignment of electron spin during the formation of the interfacial molecular orbital. Our results clarify the nature of interfacial coupling in this prototypical 3$d$/5$d$ SL system and the conclusion will shed light on the study of other strongly correlated and spin-orbit coupled oxide hetero-interfaces.
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Submitted 14 April, 2020;
originally announced April 2020.
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Robust ferromagnetism in highly strained SrCoO3 thin films
Authors:
Yujia Wang,
Qing He,
Wenmei Ming,
Mao-Hua Du,
Nianpeng Lu,
Clodomiro Cafolla,
Jun Fujioka,
Qinghua Zhang,
Ding Zhang,
Shengchun Shen,
Yingjie Lyu,
Alpha T. N'Diaye,
Elke Arenholz,
Lin Gu,
Cewen Nan,
Yoshinori Tokura,
Satoshi Okamoto,
Pu Yu
Abstract:
Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric Sr…
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Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here using a post-deposition ozone annealing method, we obtained a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observed a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal to insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.
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Submitted 4 April, 2020; v1 submitted 29 March, 2020;
originally announced March 2020.
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Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction
Authors:
**gdi Lu,
Liang Si,
Xiefei Yao,
Chengfeng Tian,
**g Wang,
Qinghua Zhang,
Zhengxun Lai,
Iftikhar Ahmed Malik,
Xin Liu,
Peiheng Jiang,
Kejia Zhu,
Youguo Shi,
Zhenlin Luo,
Lin Gu,
Karsten Held,
Wenbo Mi,
Zhicheng Zhong,
Ce-Wen Nan,
**xing Zhang
Abstract:
Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction.…
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Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.
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Submitted 24 March, 2020;
originally announced March 2020.
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Tailoring magnetic order via atomically stacking 3d/5d electrons
Authors:
Ke Huang,
Liang Wu,
Maoyu Wang,
Nyayabanta Swain,
M. Motapothula,
Yongzheng Luo,
Kun Han,
Mingfeng Chen,
Chen Ye,
Allen Jian Yang,
Huan Xu,
Dong-chen Qi,
Alpha T. N'Diaye,
Christos Panagopoulos,
Daniel Primetzhofer,
Lei Shen,
Pinaki Sengupta,
**g Ma,
Zhenxing Feng,
Ce-Wen Nan,
X. Renshaw Wang
Abstract:
The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar…
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The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications.
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Submitted 14 September, 2021; v1 submitted 16 January, 2020;
originally announced January 2020.
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Mechanisms of skyrmion and skyrmion crystal formation from the conical phase
Authors:
Taehoon Kim,
Haijun Zhao,
Ben Xu,
Brandt A Jensen,
Alexander H King,
Matthew J Kramer,
Cewen Nan,
Liqin Ke,
Lin Zhou
Abstract:
Real-space topological magnetic structures such as skyrmions and merons are promising candidates for information storage and transport. However, the microscopic mechanisms that control their formation and evolution are still not clear. Here, using in-situ Lorentz transmission electron microscopy, we demonstrate that skyrmion crystals (SkXs) can nucleate, grow, and evolve from the conical phase in…
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Real-space topological magnetic structures such as skyrmions and merons are promising candidates for information storage and transport. However, the microscopic mechanisms that control their formation and evolution are still not clear. Here, using in-situ Lorentz transmission electron microscopy, we demonstrate that skyrmion crystals (SkXs) can nucleate, grow, and evolve from the conical phase in the same ways that real nanocrystals form from vapors or solutions. More intriguingly, individual skyrmions can also "reproduce" by division in a mitosis-like process that allows them to annihilate SkX lattice imperfections, which is not available to crystals made of mass-conserving particles. Combined string method and micromagnetic calculations show that competition between repulsive and attractive interactions between skyrmions governs particle-like SkX growth, but non-conservative SkX growth appears to be defect-mediated. Our results provide insights towards manipulating magnetic topological states by applying established crystal growth theory, adapted to account for the new process of skyrmion mitosis.
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Submitted 6 December, 2019;
originally announced December 2019.
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Large Magnetoelectric Response in Sr2IrO4/SrTiO3 superlattices with non-equivalent interfaces
Authors:
Xin Liu,
Peipei Lu,
Mei Wu,
Yuanwei Sun,
**gdi Lu,
**g Wang,
Dayu Yan,
Youguo Shi,
Zhi** Yin,
Nian Xiang Sun,
Peng Gao,
Young Sun,
Fa Wang,
Ce-Wen Nan,
**xing Zhang
Abstract:
Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a con…
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Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a concurrence of ferroelectric-like and antiferromagnetic phase transitions in Sr2IrO4/SrTiO3 superlattices by artificial design periodically non-equivalent interfaces, where a maximum magnetoelectric coefficient of ~980 mV cm-1 Oe-1 can be measured. Evidenced by synchrotron X-ray absorption and electron energy loss spectroscopies, a lopsided electron occupation occurs at the interfacial Ti ions. From perturbative calculations and numerical results, a strong coupling of antiferromagnetism and asymmetric electron occupation mediated by spin-orbit interaction leads to a large bulk magnetoelectric response. This atomic tailoring of the quantum order parameters in 3d and 5d oxides provides an alternative pathway towards strong magnetoelectric effects with thin-film integrations.
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Submitted 3 October, 2019;
originally announced October 2019.
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Electrical Control of Large Rashba Effect in Oxide Heterostructures
Authors:
Yan Song,
Dong Zhang,
Ben Xu,
Kai Chang,
Ce-Wen Nan
Abstract:
Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin…
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Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin texture and drastic change of Rashba splitting strength with ferroelectric polarization switching are realized in the symmetric and asymmetric heterostructures, respectively. By artificially tuning the local ferroelectric displacement and the orbital hybridization, the synergetic effect of local potential gradient and orbital overlap on the dramatic change of splitting strength is confirmed. These results improve the feasibility of utilizing Rashba spin-orbit coupling in spintronic devices.
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Submitted 9 September, 2019;
originally announced September 2019.
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A protonated brownmillerite electrolyte for superior low-temperature proton conductivity
Authors:
Nianpeng Lu,
Yujia Wang,
Shuang Qiao,
Hao-Bo Li,
Qing He,
Zhuolu Li,
Meng Wang,
**gzhao Zhang,
Sze Chun Tsang,
**gwen Guo,
Shuzhen Yang,
Jianbing Zhang,
Ke Deng,
Ding Zhang,
**g Ma,
Yang Wu,
Junyi Zhu,
Yoshinori Tokura,
Ce-Wen Nan,
Jian Wu,
Pu Yu
Abstract:
Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature du…
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Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature due to the associated scientific and technological importance. Here, we report a conceptually new solid oxide electrolyte, HSrCoO2.5, which shows an exceptional enhanced proton conductivity at low temperature region (from room temperature to 140 oC). Combining both the experimental results and corresponding first-principles calculations, we attribute these intriguing properties to the extremely-high proton concentration as well as the well-ordered oxygen vacancy channels inherited from the novel crystalline structure of HSrCoO2.5. This result provides a new strategy to design novel solid oxide electrolyte with excellent proton conductivity for wide ranges of energy-related applications.
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Submitted 26 November, 2018;
originally announced November 2018.
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Ionic Modulation of Interfacial Magnetism through Electrostatic Do** in Pt/YIG bilayer heterostructure
Authors:
Mengmeng Guan,
Lei Wang,
Ziyao Zhou,
Guohua Dong,
Shishun Zhao,
Wei Su,
Tai Min,
**g Ma,
Zhongqiang Hu,
Wei Ren,
Zuo-Guang Ye,
Ce-Wen Nan,
Ming Liu
Abstract:
Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pum**, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt cap** would influen…
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Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pum**, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt cap** would influence the ferromagnetic (FMR) field position significantly, and realize a significant magnetism enhancement in bilayer system. A large voltage induced FMR field shifts of 690 Oe has been achieved in YIG (13 nm)/Pt (3 nm) multilayer heterostructures under a small voltage bias of 4.5 V. The remarkable ME tunability comes from voltage induced extra FM ordering in Pt metal layer near the Pt/YIG interface. The first-principle theoretical simulation reveal that the electrostatic do** induced Pt5+ ions have strong magnetic ordering due to uncompensated d orbit electrons. The large voltage control of FMR change pave a foundation towards novel voltage tunable YIG based spintronics.
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Submitted 5 March, 2018; v1 submitted 20 November, 2017;
originally announced November 2017.
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First-principles study of the layered thermoelectric material TiNBr
Authors:
Shuofeng Zhang,
Ben Xu,
Yuanhua Lin,
Cewen Nan,
Wei Liu
Abstract:
Layer-structured materials are often considered to be good candidates for thermoelectric materials, because they tend to exhibit intrinsically low thermal conductivity as a result of atomic interlayer interactions. The electrical properties of layer-structured materials can be easily tuned using various methods, such as band modification and intercalation. We report TiNBr, as a member of the layer…
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Layer-structured materials are often considered to be good candidates for thermoelectric materials, because they tend to exhibit intrinsically low thermal conductivity as a result of atomic interlayer interactions. The electrical properties of layer-structured materials can be easily tuned using various methods, such as band modification and intercalation. We report TiNBr, as a member of the layer-structured metal nitride halide system MNX (M = Ti, Zr, Hf; X = Cl, Br, I), and it exhibits an ultrahigh Seebeck coefficient of 2215 $μV/K$ at 300K. The value of the dimensionless figure of merit, ZT, along A axis can be as high as 0.661 at 800K, corresponding to a lattice thermal conductivity as low as 1.34 W/(m K). The low ${κ_l}$ of TiNBr is associated with a collectively low phonon group velocity ($2.05\times 10^3 $ m/s on average) and large phonon anharmonicity that can be quantified using the Grüneisen parameter and three-phonon processes. Animation of the atomic motion in highly anharmonic modes mainly involves the motion of N atoms, and the charge density difference reveals that the N atoms become polarized with the merging of anharmonicity. Moreover, the fitting procedure of the energy-displacement curve verifies that in addition to the three-phonon processes, the fourth-order anharmonic effect is also important in the integral anharmonicity of TiNBr. Our work is the first study of the thermoelectric properties of TiNBr and may help establish a connection between the low lattice thermal conductivity and the behavior of phonon vibrational modes.
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Submitted 23 December, 2018; v1 submitted 6 October, 2017;
originally announced October 2017.
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Mechanical Switching of Nanoscale Multiferroic Phase Boundaries
Authors:
Yong-Jun Li,
Jian-Jun Wang,
Jian-Chao Ye,
Xiao-Xing Ke,
Gao-Yang Gou,
Yan Wei,
Fei Xue,
**g Wang,
Chuan-Shou Wang,
Ren-Ci Peng,
Xu-Liang Deng,
Yong Yang,
Xiao-Bing Ren,
Long-Qing Chen,
Ce-Wen Nan,
**-Xing Zhang
Abstract:
Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase bou…
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Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO 3 with a phase mixture, where the material can be reversibly transformed between the "soft" tetragonal-like and the "hard" rhombohedrallike structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180° rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.
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Submitted 26 September, 2017;
originally announced September 2017.
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Nanoscale Bandgap Tuning across an Inhomogeneous Ferroelectric Interface
Authors:
**g Wang,
Houbing Huang,
Wangqiang He,
Qinghua Zhang,
Danni Yang,
Yuelin Zhang,
Renrong Liang,
Chuanshou Wang,
Xingqiao Ma,
Lin Gu,
Longqing Chen,
Ce-Wen Nan,
**xing Zhang
Abstract:
We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the photocurrent were explore to illustrate the reversible bandgap variation (~0.3eV). This local-strain-engineered bandgap has been further revealed by in situ probe…
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We report nanoscale bandgap engineering via a local strain across the inhomogeneous ferroelectric interface, which is controlled by the visible-light-excited probe voltage. Switchable photovolatic effects and the spectral response of the photocurrent were explore to illustrate the reversible bandgap variation (~0.3eV). This local-strain-engineered bandgap has been further revealed by in situ probe-voltage-assisted valence electron energy-loss spectroscopy (EELS). Phase-field simulations and first-principle calculations were also employed for illustration of the large local strain and the bandgap variation in ferroelectric perovskite oxides. This reversible bandgap tuning in complex oxides demonstrates a framework for the understanding of the opticallyrelated behaviors (photovoltaic, photoemission, and photocatalyst effects) affected by order parameters such as charge, orbital, and lattice parameters.
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Submitted 25 September, 2017;
originally announced September 2017.
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Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO
Authors:
Zhong Sun,
Yonggang Zhao,
Min He,
Lin Gu,
Chao Ma,
Kuijuan **,
Diyang Zhao,
Nannan Luo,
Qinghua Zhang,
Na Wang,
Wenhui Duan,
Ce-Wen Nan
Abstract:
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normall…
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Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron microscopy & electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors.
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Submitted 29 January, 2017;
originally announced January 2017.
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Critical behavior of the Ashkin-Teller model with a line defect: a Montecarlo study
Authors:
G. Duchowney,
C. Naón,
A. Iucci
Abstract:
We study magnetic critical behavior in the Ashkin-Teller model with an asymmetric defect line. This system is represented by two Ising lattices of spins $σ$ and $τ$ interacting through a four-spin coupling $ε$. In addition, the couplings between $σ$-spins are modified along a particular line, whereas couplings between $τ$-spins are kept unaltered. This problem has been previously considered by mea…
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We study magnetic critical behavior in the Ashkin-Teller model with an asymmetric defect line. This system is represented by two Ising lattices of spins $σ$ and $τ$ interacting through a four-spin coupling $ε$. In addition, the couplings between $σ$-spins are modified along a particular line, whereas couplings between $τ$-spins are kept unaltered. This problem has been previously considered by means of analytical field-theoretical methods and by numerical techniques, with contradictory results. For $ε> 0$ field-theoretical calculations give a magnetic critical exponent corresponding to $σ$-spins which depends on the defect strength only (it is independent of $ε$), while $τ$-spins magnetization decay with the universal Ising value $1/8$. On the contrary, numerical computations based on density matrix renormalization (DMRG) give, for $ε> 0$ similar scaling behaviors for $σ$ and $τ$ spins, which depend on both $ε$ and defect intensity. In this paper we revisit the problem by performing a direct Montecarlo simulation. Our results are in well agreement with DMRG computations. We also discuss some possible sources for the disagreement between numerical and analytical results.
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Submitted 28 December, 2016;
originally announced December 2016.
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Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy
Authors:
Wenmin Yang,
Shuo Yang,
Qinghua Zhang,
Yang Xu,
Shipeng Shen,
Jian Liao,
**g Teng,
Cewen Nan,
Lin Gu,
Young Sun,
Kehui Wu,
Yongqing Li
Abstract:
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistanc…
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We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in perpendicular fields and negative in parallel fields. The magnetic field and temperature dependence of the MR is explained as a consequence of the suppression of WAL due to strong magnetic interactions at the Bi$_{2}$Se$_{3}$/BaM interface.
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Submitted 8 April, 2015;
originally announced April 2015.
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Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer
Authors:
J. Wang,
L. S. Xie,
C. S. Wang,
H. Z. Zhang,
L. Shu,
J. Bai,
Y. S. Chai,
X. Zhao,
J. C. Nie,
C. B. Cao,
C. Z. Gu,
C. M. Xiong,
Y. Sun,
J. Shi,
S. Salahuddin,
K. Xia,
C. W. Nan,
J. X. Zhang
Abstract:
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108…
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A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall motion manipulated by a successive injection of spin-polarized current into a magnetic nanostructure. However, an integrant high-threshold current density of 107~108 A/cm2 inhibits the integration of those nanostructures with low-energy-cost technology. In addition, a precise determination of the location of domain walls at nanoscale seems difficult in artificially manufactured nanostructures. Here we report an approach to manipulate a single magnetic domain wall with a perpendicular anisotropy in a manganite/dielectric/metal capacitor using a probe-induced spin displacement. A spin angular momentum transfer torque occurs in the strongly correlated manganite film during the spin injection into the capacitor from the nanoscale magnetized tip with an ultralow voltage of 0.1 V, where the threshold spin-polarized current density is ~104 A/cm2 at the tip/manganite interface. The probe-voltage-controlled domain wall motion in the capacitor demonstrates a critical framework for the fundamental understanding of the manipulation of the nano-magnet systems with low energy consumption.
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Submitted 10 July, 2014;
originally announced July 2014.
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Duality and bosonization in Schwinger-Keldysh formulation
Authors:
R. E. Gamboa Saraví,
C. M. Naón,
F. A. Schaposnik
Abstract:
We present a path-integral bosonization approach for systems out of equilibrium based on a duality transformation of the original Dirac fermion theory combined with the Schwinger-Keldysh time closed contour technique, to handle the non-equilibrium situation. The duality approach to bosonization that we present is valid for $D \geq 2$ space-time dimensions leading for $D=2$ to exact results. In thi…
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We present a path-integral bosonization approach for systems out of equilibrium based on a duality transformation of the original Dirac fermion theory combined with the Schwinger-Keldysh time closed contour technique, to handle the non-equilibrium situation. The duality approach to bosonization that we present is valid for $D \geq 2$ space-time dimensions leading for $D=2$ to exact results. In this last case we present the bosonization rules for fermion currents, calculate current-current correlation functions and establish the connection between the fermionic and bosonic distribution functions in a generic, nonequilibrium situation.
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Submitted 17 June, 2014;
originally announced June 2014.
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Heat transport through quantum Hall edge states: Tunneling versus capacitive coupling to reservoirs
Authors:
H. Aita,
L. Arrachea,
C. Naón,
E. Fradkin
Abstract:
We study the heat transport along an edge state of a two-dimensional electron gas in the quantum Hall regime, in contact to two reservoirs at different temperatures. We consider two exactly solvable models for the edge state coupled to the reservoirs. The first one corresponds to filling $ν=1$ and tunneling coupling to the reservoirs. The second one corresponds to integer or fractional filling of…
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We study the heat transport along an edge state of a two-dimensional electron gas in the quantum Hall regime, in contact to two reservoirs at different temperatures. We consider two exactly solvable models for the edge state coupled to the reservoirs. The first one corresponds to filling $ν=1$ and tunneling coupling to the reservoirs. The second one corresponds to integer or fractional filling of the sequence $ν=1/m$ (with $m$ odd), and capacitive coupling to the reservoirs. In both cases we solve the problem by means of non-equilibrium Green function formalism. We show that heat propagates chirally along the edge in the two setups. We identify two temperature regimes, defined by $Δ$, the mean level spacing of the edge. At low temperatures, $T< Δ$, finite size effects play an important role in heat transport, for both types of contacts. The nature of the contacts manifest themselves in different power laws for the thermal conductance as a function of the temperature. For capacitive couplings a highly non-universal behavior takes place, through a prefactor that depends on the length of the edge as well as on the coupling strengths and the filling fraction. For larger temperatures, $T>Δ$, finite-size effects become irrelevant, but the heat transport strongly depends on the strength of the edge-reservoir interactions, in both cases. The thermal conductance for tunneling coupling grows linearly with $T$, whereas for the capacitive case it saturates to a value that depends on the coupling strengths and the filling factors of the edge and the contacts.
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Submitted 21 October, 2013; v1 submitted 24 May, 2013;
originally announced May 2013.
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Transient and finite size effects in transport properties of a quantum wire
Authors:
Mariano Salvay,
Aníbal Iucci,
Carlos Naón
Abstract:
We study the time-dependent backscattered current produced in a quantum wire when a local barrier is suddenly switched on. Previous investigations are improved by taking into account the finite length of the device. We establish two different regimes in terms of the relationship between the energy scales associated to the voltage and the length of the system. We show how previous results, valid fo…
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We study the time-dependent backscattered current produced in a quantum wire when a local barrier is suddenly switched on. Previous investigations are improved by taking into account the finite length of the device. We establish two different regimes in terms of the relationship between the energy scales associated to the voltage and the length of the system. We show how previous results, valid for wires of infinite length, are modified by the finite size of the system. In particular our study reveals a rich pattern of temporal steps within which the current suffers an initial relaxation followed by temporary revivals. By employing both analytical and numerical methods we describe peculiar features of this structure. From this analysis one concludes that our results render a recently proposed approach to the determination of the Luttinger parameter K, more realistic.
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Submitted 1 August, 2011;
originally announced August 2011.
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Four-terminal resistance of an interacting quantum wire with weakly invasive contacts
Authors:
Hugo Aita,
Liliana Arrachea,
Carlos Naón
Abstract:
We analyze the behavior of the four-terminal resistance, relative to the two-terminal resistance of an interacting quantum wire with an impurity, taking into account the invasiveness of the voltage probes. We consider a one-dimensional Luttinger model of spinless fermions for the wire. We treat the coupling to the voltage probes perturbatively, within the framework of non-equilibrium Green functio…
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We analyze the behavior of the four-terminal resistance, relative to the two-terminal resistance of an interacting quantum wire with an impurity, taking into account the invasiveness of the voltage probes. We consider a one-dimensional Luttinger model of spinless fermions for the wire. We treat the coupling to the voltage probes perturbatively, within the framework of non-equilibrium Green function techniques. Our investigation unveils the combined effect of impurities, electron-electron interactions and invasiveness of the probes on the possible occurrence of negative resistance.
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Submitted 21 November, 2011; v1 submitted 7 February, 2011;
originally announced February 2011.
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Spin correlation function in 2D statistical mechanics models with inhomogeneous line defects
Authors:
Carlos Naón,
Marta Trobo
Abstract:
We consider the critical spin-spin correlation function of the 2D Ising model with a line defect which strength is an arbitrary function of position. By using path-integral techniques in the continuum description of this model in terms of fermion fields, we obtain an analytical expression for the correlator as functional of the position dependent coupling. Thus, our result provides one of the few…
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We consider the critical spin-spin correlation function of the 2D Ising model with a line defect which strength is an arbitrary function of position. By using path-integral techniques in the continuum description of this model in terms of fermion fields, we obtain an analytical expression for the correlator as functional of the position dependent coupling. Thus, our result provides one of the few analytical examples that allows to illustrate the transit of a magnetic system from scaling to non-scaling behavior in a critical regime. We also show that the non-scaling behavior obtained for the spin correlator along a non-uniformly altered line of an Ising model remains unchanged in the Ashkin-Teller model.
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Submitted 22 December, 2010;
originally announced December 2010.
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Size dependent electric voltage-controlled magnetic anisotropy in multiferroic heterostructures: Interface-charge and strain co-mediated magnetoelectric coupling
Authors:
Jia-Mian Hu,
Ce-Wen Nan,
Long-Qing Chen
Abstract:
We present a phenomenological scheme to study the size-dependent electric voltage-controlled magnetic anisotropy in ferromagnetic (FM)/ferroelectric (FE) heterostructures. The FM layers are either metallic Fe(001), Ni(001), Co(0001), or half-metallic (La, Sr)MnO3 films. Two magnetoelectric mechanisms, i.e., interface-charge and strain-mediated couplings, are considered. We show that the interface-…
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We present a phenomenological scheme to study the size-dependent electric voltage-controlled magnetic anisotropy in ferromagnetic (FM)/ferroelectric (FE) heterostructures. The FM layers are either metallic Fe(001), Ni(001), Co(0001), or half-metallic (La, Sr)MnO3 films. Two magnetoelectric mechanisms, i.e., interface-charge and strain-mediated couplings, are considered. We show that the interface-charge mediated coupling is the main mechanism for the magnetoelectic coupling when the FM film thickness is below a certain transition thickness dtr while the strain-mediated coupling dominates above dtr.
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Submitted 30 November, 2010;
originally announced December 2010.
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Transient effects in the backscattered current of a Luttinger liquid
Authors:
Mariano J. Salvay,
Hugo A. Aita,
Carlos M. Naón
Abstract:
We study the backscattered current in a Luttinger liquid in the presence of a point like weak impurity switched on at finite time, taking into account finite-temperature effects. We show how the well-known results for a static impurity are distorted. We derive a dimensionless parameter $τ_{R}$ as function of the electron-electron interaction and the temperature, such that for $τ_{R} < 1$ ($> 1$)…
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We study the backscattered current in a Luttinger liquid in the presence of a point like weak impurity switched on at finite time, taking into account finite-temperature effects. We show how the well-known results for a static impurity are distorted. We derive a dimensionless parameter $τ_{R}$ as function of the electron-electron interaction and the temperature, such that for $τ_{R} < 1$ ($> 1$) the switching process is relevant (irrelevant). Our results suggest the possibility of determining the value of the Luttinger parameter $K$ through time measurements in transport experiments at fixed voltage.
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Submitted 16 February, 2010;
originally announced February 2010.
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Magnetic-Field-Dependent Raman Scattering in Multiferroic Bilayer Films: Evidence for Stress-Mediated Magnetoelectric Coupling
Authors:
Zheng Li,
Yao Wang,
Yuanhua Lin,
Cewen Nan
Abstract:
We report the first magnetic-field-dependent Raman scattering studies on Pb(Zr,Ti)O3-CoFe2O4 bilayer multiferroic system. The phonon frequencies of the nano-bilayers obviously change with magnetic field, which is absent in the single Pb(Zr,Ti)O3 films. The magnetostriction of the CoFe2O4 layer generates stress mechanically transferred to the Pb(Zr,Ti)O3 layer, resulting in the mode changes. The…
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We report the first magnetic-field-dependent Raman scattering studies on Pb(Zr,Ti)O3-CoFe2O4 bilayer multiferroic system. The phonon frequencies of the nano-bilayers obviously change with magnetic field, which is absent in the single Pb(Zr,Ti)O3 films. The magnetostriction of the CoFe2O4 layer generates stress mechanically transferred to the Pb(Zr,Ti)O3 layer, resulting in the mode changes. The observed magnetic-field-induced softening of the soft mode in the Pb(Zr,Ti)O3 layer bears a striking resemblance to direct magnetoelectric output in the bilayers, providing evidence for stress-mediated magnetoelectric coupling mechanism in the multiferroic bi-layers.
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Submitted 15 February, 2009;
originally announced February 2009.
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Critical behavior of the spin correlation function in Ashkin-Teller and Baxter models with a line defect
Authors:
Carlos Naón
Abstract:
We consider the critical spin-spin correlation function of the Ashkin-Teller and Baxter models. By using path-integral techniques in the continuum description of these models in terms of fermion fields, we show that the correlation decays with distance with the same critical exponent as the Ising model. The procedure is straightforwardly extended to take into account the presence of a line defec…
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We consider the critical spin-spin correlation function of the Ashkin-Teller and Baxter models. By using path-integral techniques in the continuum description of these models in terms of fermion fields, we show that the correlation decays with distance with the same critical exponent as the Ising model. The procedure is straightforwardly extended to take into account the presence of a line defect. Thus we find that in these altered models the critical index of the magnetic correlation on the defect coincides with the one of the defective 2D Ising or Bariev's model.
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Submitted 20 April, 2009; v1 submitted 22 December, 2008;
originally announced December 2008.
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Systematic changes of the electronic structure of the diluted ferromagnetic oxide Li-doped Ni$_{1-x}$Fe$_x$O with hole do**
Authors:
M. Kobayashi,
J. I. Hwang,
G. S. Song,
Y. Ooki,
M. Takizawa,
A. Fujimori,
Y. Takeda,
S. -I. Fujimori,
K. Terai,
T. Okane,
Y. Saitoh,
H. Yamagami,
Y. -H. Lin,
C. -W. Nan
Abstract:
The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li do**. In contrast, the Fe$^{3+}$ intensity increased with Li do** relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li…
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The electronic structure of Li-doped Ni$_{1-x}$Fe$_x$O has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ni $2p$ core-level PES and XAS spectra were not changed by Li do**. In contrast, the Fe$^{3+}$ intensity increased with Li do** relative to the Fe$^{2+}$ intensity. However, the increase of Fe$^{3+}$ is only $\sim 5%$ of the doped Li content, suggesting that most of the doped holes enter the O $2p$ and/or the charge-transferred configuration Ni $3d^8\underline{L}$. The Fe 3d partial density of states and the host valence-band emission near valence-band maximum increased with Li content, consistent with the increase of electrical conductivity. Based on these findings, percolation of bound magnetic polarons is proposed as an origin of the ferromagnetic behavior.
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Submitted 29 November, 2007;
originally announced November 2007.
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Voltage profile and four terminal resistance of an interacting quantum wire
Authors:
Liliana Arrachea,
Carlos Naón,
Mariano Salvay
Abstract:
We investigate the behavior of the four-terminal resistance $R_{4pt}$ in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by dirty voltage probes. In the first case, interactions leave a signature in a power law behavior of $R_{4pt}$ as a function of the voltage…
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We investigate the behavior of the four-terminal resistance $R_{4pt}$ in a quantum wire described by a Luttinger liquid in two relevant situations: (i) in the presence of a single impurity within the wire and (ii) under the effect of asymmetries introduced by dirty voltage probes. In the first case, interactions leave a signature in a power law behavior of $R_{4pt}$ as a function of the voltage $V$ and the temperature $T$. In the second case interactions tend to mask the effect of the asymmetries. In both scenarios the occurrence of negative values of $R_{4pt}$ is explained in simple terms.
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Submitted 7 March, 2008; v1 submitted 22 November, 2007;
originally announced November 2007.
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Phase Change Observed in Ultrathin Ba0.5Sr0.5TiO3 Films by in-situ Resonant Photoemission Spectroscopy
Authors:
Y. -H. Lin,
K. Terai,
H. Wadati,
M. Kobayashi,
M. Takizawa,
J. I. Hwang,
A. Fujimori,
C. -W. Nan,
J. -F. Li,
S. -I. Fujimori,
T. Okane,
Y. Saitoh,
K. Kobayashi
Abstract:
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~…
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Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a function of film thickness, both at room temperature and low temperature. Our results demonstrated an abrupt variation in the spectral structures between 2.8 nm (~7 monolayers) and 2.0 nm (~5 monolayers) Ba0.5Sr0.5TiO3 films, suggesting that there exists a critical thickness for phase change in the range of 2.0 nm to 2.8 nm. This may be ascribed mainly to the intrinsic size effects.
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Submitted 24 May, 2007;
originally announced May 2007.
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Quantum pump effect in one-dimensional systems of Dirac fermions
Authors:
L. Arrachea,
Carlos Naón,
Mariano Salvay
Abstract:
We investigate the behavior of the directed current in one-dimensional systems of Dirac fermions driven by local periodic potentials in the forward as well in backscattering channels. We treat the problem with Keldysh non-equilibrium Green's function formalism. We present the exact solution for the case of an infinite wire and show that in this case the dc current vanishes identically. We also i…
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We investigate the behavior of the directed current in one-dimensional systems of Dirac fermions driven by local periodic potentials in the forward as well in backscattering channels. We treat the problem with Keldysh non-equilibrium Green's function formalism. We present the exact solution for the case of an infinite wire and show that in this case the dc current vanishes identically. We also investigate a confined system consistent in an annular arrangement coupled to a particle reservoir. We present a perturbative treatment that allows for the analytical expressions of the dc current in the lowest order of the amplitudes of the potential. We also present results obtained from the exact numerical solution of the problem.
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Submitted 18 April, 2007;
originally announced April 2007.
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Backscattering off a dynamical impurity in one-dimensional Fermi systems: A perturbative computation
Authors:
Carlos M. Naón,
Mariano J. Salvay
Abstract:
We investigate the problem of backscattering off a time-dependent and spatially extended barrier in a one-dimensional electron gas. By performing a perturbative expansion in the backscattering amplitude, we compute the total energy density of the system. We show how the free fermion spectrum and the conductance of the system are affected by the interplay between dynamical and geometrical propert…
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We investigate the problem of backscattering off a time-dependent and spatially extended barrier in a one-dimensional electron gas. By performing a perturbative expansion in the backscattering amplitude, we compute the total energy density of the system. We show how the free fermion spectrum and the conductance of the system are affected by the interplay between dynamical and geometrical properties of the impurity.
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Submitted 13 October, 2006;
originally announced October 2006.
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Conformal properties of 1D quantum systems with long-range interactions
Authors:
Carlos M. Naón,
Mariano J. Salvay,
Marta L. Trobo
Abstract:
We investigate conformal properties of a one-dimensional quantum system with a long-range, Coulomb-like potential of the form $\frac{1}{|x|^σ}$, with $σ>0$. We compute the conformal anomaly $c$ as function of $σ$. We obtain $c=0$ for $σ<1$ (Wigner crystal) and $c=1$ for $σ>1$ (Luttinger liquid). By studying the scaling regime of the system when it is deformed by the inclusion of a term $t ρ(x)$,…
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We investigate conformal properties of a one-dimensional quantum system with a long-range, Coulomb-like potential of the form $\frac{1}{|x|^σ}$, with $σ>0$. We compute the conformal anomaly $c$ as function of $σ$. We obtain $c=0$ for $σ<1$ (Wigner crystal) and $c=1$ for $σ>1$ (Luttinger liquid). By studying the scaling regime of the system when it is deformed by the inclusion of a term $t ρ(x)$, (with $ρ(x)$ a scaling operator), we show that, for $σ>1$, the correlation length $ξ$ gets an additional interaction dependent factor. This leads to a necessary redefinition of $ξ$ in order to avoid an unphysical dependence of the central charge on the coupling constant.
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Submitted 16 November, 2005; v1 submitted 26 August, 2005;
originally announced August 2005.
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Non-perturbative approach to backscattering off a dynamical impurity in 1D Fermi systems
Authors:
Daniel G. Barci,
L. Moriconi,
M. Moriconi,
Carlos M. Naón,
Mariano J. Salvay
Abstract:
We investigate the problem of backscattering off a time-dependent impurity in a one-dimensional electron gas. By combining the Schwinger-Keldysh method with an adiabatic approximation in order to deal with the corresponding out of equilibrium Dirac equation, we compute the total energy density (TED) of the system. We show how the free fermion TED is distorted by the backscattering amplitude and…
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We investigate the problem of backscattering off a time-dependent impurity in a one-dimensional electron gas. By combining the Schwinger-Keldysh method with an adiabatic approximation in order to deal with the corresponding out of equilibrium Dirac equation, we compute the total energy density (TED) of the system. We show how the free fermion TED is distorted by the backscattering amplitude and the geometry of the impurity.
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Submitted 3 November, 2005; v1 submitted 16 March, 2005;
originally announced March 2005.
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Infrared study of giant dielectric constant in Li and Ti doped NiO
Authors:
Jung-Ho Kim,
Youngwoo Lee,
A Souchkov,
J. S. Lee,
H. D. Drew,
S. -J. Oh,
C. W. Nan,
E. J. Choi
Abstract:
We have measured optical reflectivity of Li and Ti doped NiO (LTNO) in the infrared range at various temperatures. A Drude-like absorption is found at low energy, $ω<$ 100 cm$^{-1}$ and its spectral weight increases substantially as temperature decreases. This observation and DC-resistivity result show that LTNO has a conductive grain and resistive boundary. Such composite structure provides evi…
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We have measured optical reflectivity of Li and Ti doped NiO (LTNO) in the infrared range at various temperatures. A Drude-like absorption is found at low energy, $ω<$ 100 cm$^{-1}$ and its spectral weight increases substantially as temperature decreases. This observation and DC-resistivity result show that LTNO has a conductive grain and resistive boundary. Such composite structure provides evidence of the Maxwell-Wagner (MW) mechanism as the origin of the high dielectric constant $ε_{o}$. We propose a three-phase granular structure and show that this extended MW model explains the observed frequency and temperature dependence of the dielectric constant as well as the giant value of $ε_{o}$.
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Submitted 5 September, 2004;
originally announced September 2004.
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Effect of nonadiabatic switching of dynamic perturbations in 1d Fermi systems
Authors:
Carlos M. Naón,
Mariano J. Salvay,
Marta L. Trobo
Abstract:
We study a two-dimensional fermionic QFT used to model 1D strongly correlated electrons in the presence of a time-dependent impurity that drives the system out of equilibrium. In contrast to previous investigations, we consider a dynamic barrier switched on at a finite time. We compute the total energy density (TED) of the system and establish two well defined regimes in terms of the relationshi…
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We study a two-dimensional fermionic QFT used to model 1D strongly correlated electrons in the presence of a time-dependent impurity that drives the system out of equilibrium. In contrast to previous investigations, we consider a dynamic barrier switched on at a finite time. We compute the total energy density (TED) of the system and establish two well defined regimes in terms of the relationship between the frequency of the time-dependent perturbation $Ω$ and the electron energy $ω$. Finally, we derive a relaxation time $t_{R}$ such that for times shorter than $t_{R}$ the finite-time switching process is relevant.
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Submitted 23 September, 2004; v1 submitted 11 June, 2004;
originally announced June 2004.
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Functional bosonization with time dependent perturbations
Authors:
Carlos M. Naón,
Mariano J. Salvay,
Marta L. Trobo
Abstract:
We extend a path-integral approach to bosonization previously developed in the framework of equilibrium Quantum Field Theories, to the case in which time-dependent interactions are taken into account. In particular we consider a non covariant version of the Thirring model in the presence of a dynamic barrier at zero temperature. By using the Closed Time Path (Schwinger-Keldysh) formalism, we com…
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We extend a path-integral approach to bosonization previously developed in the framework of equilibrium Quantum Field Theories, to the case in which time-dependent interactions are taken into account. In particular we consider a non covariant version of the Thirring model in the presence of a dynamic barrier at zero temperature. By using the Closed Time Path (Schwinger-Keldysh) formalism, we compute the Green's function and the Total Energy Density of the system. Since our model contains the Tomonaga Luttinger model as a particular case, we make contact with recent results on non-equilibrium electronic systems.
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Submitted 12 December, 2003;
originally announced December 2003.
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A non covariant fermionic determinant and its connection to Luttinger systems
Authors:
Aníbal Iucci,
Carlos Naón
Abstract:
We consider a fermionic determinant associated to a non covariant Quantum Field Theory used to describe a non relativistic system in (1+1) dimensions. By exploiting the freedom that arises when Lorentz invariance is not mandatory, we determine the heat-kernel regulating operator so as to reproduce the correct dispersion relations of the bosonic excitations. We also derive the Hamiltonian of the…
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We consider a fermionic determinant associated to a non covariant Quantum Field Theory used to describe a non relativistic system in (1+1) dimensions. By exploiting the freedom that arises when Lorentz invariance is not mandatory, we determine the heat-kernel regulating operator so as to reproduce the correct dispersion relations of the bosonic excitations. We also derive the Hamiltonian of the functionally bosonized model and the corresponding currents. In this way we were able to establish the precise heat-kernel regularization that yields complete agreement between the path-integral and operational approaches to the bosonization of the Tomonaga-Luttinger model.
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Submitted 14 November, 2003;
originally announced November 2003.
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RG study of a non local sine-Gordon model
Authors:
Carlos M. Naón,
Mariano J. Salvay
Abstract:
We study a non local version of the sine-Gordon model connected to a many-body system with backward and umklapp scattering processes. Using renormalization group methods we derive the flow equations for the couplings and show how non locality affects the gap in the spectrum of charge-density excitations. We compare our results with previous predictions obtained through the self-consistent harmon…
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We study a non local version of the sine-Gordon model connected to a many-body system with backward and umklapp scattering processes. Using renormalization group methods we derive the flow equations for the couplings and show how non locality affects the gap in the spectrum of charge-density excitations. We compare our results with previous predictions obtained through the self-consistent harmonic approximation.
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Submitted 5 May, 2003; v1 submitted 2 December, 2002;
originally announced December 2002.
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Improved harmonic approximation and the 2D Ising model at $T\neq T_{c}$ and $h\neq0$
Authors:
Aníbal Iucci,
Carlos M. Naón
Abstract:
We propose a new method to determine the unknown parameter associated to a self-consistent harmonic approximation. We check the validity of our technique in the context of the sine-Gordon model. As a non trivial application we consider the scaling regime of the 2D Ising model away from the critical point and in the presence of a magnetic field $h$. We derive an expression that relates the approx…
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We propose a new method to determine the unknown parameter associated to a self-consistent harmonic approximation. We check the validity of our technique in the context of the sine-Gordon model. As a non trivial application we consider the scaling regime of the 2D Ising model away from the critical point and in the presence of a magnetic field $h$. We derive an expression that relates the approximate correlation length $ξ$, $T-T_c$ and $h$.
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Submitted 2 September, 2002;
originally announced September 2002.
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Luttinger liquid with asymmetric dispersion
Authors:
Victoria I. Fernández,
Aníbal Iucci,
Carlos M. Naón
Abstract:
We present an extension of the Tomonaga-Luttinger model in which left and right-moving particles have different Fermi velocities. We derive expressions for one-particle Green's functions, momentum-distributions, density of states, charge compressibility and conductivity as functions of both the velocity difference $ε$ and the strength of the interaction $β$. This allows us to identify a novel re…
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We present an extension of the Tomonaga-Luttinger model in which left and right-moving particles have different Fermi velocities. We derive expressions for one-particle Green's functions, momentum-distributions, density of states, charge compressibility and conductivity as functions of both the velocity difference $ε$ and the strength of the interaction $β$. This allows us to identify a novel restricted region in the parameter space in which the system keeps the main features of a Luttinger liquid but with an unusual behavior of the density of states and the static charge compressibility $κ$. In particular $κ$ diverges on the boundary of the restricted region, indicating the occurrence of a phase transition.
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Submitted 30 September, 2002; v1 submitted 2 January, 2002;
originally announced January 2002.
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Non local Thirring model with backward and umklapp interactions
Authors:
V. I. Fernández,
C. A. Iucci,
C. M. Naón
Abstract:
We extend a non local and non covariant version of the Thirring model in order to describe a many-body system with backward and umklapp scattering processes. We express the vacuum to vacuum functional in terms of a non trivial fermionic determinant. Using path-integral methods we find a bosonic representation for this determinant which allows us to obtain an effective action for the collective e…
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We extend a non local and non covariant version of the Thirring model in order to describe a many-body system with backward and umklapp scattering processes. We express the vacuum to vacuum functional in terms of a non trivial fermionic determinant. Using path-integral methods we find a bosonic representation for this determinant which allows us to obtain an effective action for the collective excitations of the system. By introducing a non local version of the self-consistent harmonic approximation, we get an expression for the gap of the charge-density excitations as functional of arbitrary electron-electron potentials. As an example we also consider the case of a non contact umklapp interaction.
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Submitted 7 December, 2001;
originally announced December 2001.
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Conformal Gaussian Approximation
Authors:
Aníbal Iucci,
Carlos Naón
Abstract:
We present an alternative way to determine the unknown parameter associated to a gaussian approximation in a generic two-dimensional model. Instead of the standard variational approach, we propose a procedure based on a quantitative prediction of conformal invariance, valid for systems in the scaling regime, away from criticality. We illustrate our idea by considering, as an example, the sine-Go…
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We present an alternative way to determine the unknown parameter associated to a gaussian approximation in a generic two-dimensional model. Instead of the standard variational approach, we propose a procedure based on a quantitative prediction of conformal invariance, valid for systems in the scaling regime, away from criticality. We illustrate our idea by considering, as an example, the sine-Gordon model. Our method gives a good approximation for the soliton mass as function of $β$.
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Submitted 21 September, 2001; v1 submitted 14 September, 2001;
originally announced September 2001.