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Observation of two-level critical-state in a van-der-Waals superconductor Pt(Bi$_{1-x}$Se$_x$)$_2$
Authors:
Y. Samukawa,
M. Maeda,
N. Jiang,
R. Nakamura,
M. Watanabe,
K. Takaki,
Y. Moriyasu,
K. Kudo,
Y. Niimi
Abstract:
Trigonal PtBi$_2$ is one of the attractive van-der-Waals materials because of the enhancement of its superconducting transition temperature $T_{\rm{c}}$ by do** chalcogen elements such as Se and Te. Recently, it has been reported that $T_{\rm{c}}$ of Pt(Bi$_{1-x}$Se$_x$)$_2$ is enhanced by a factor of 4, compared to the pristine PtBi$_2$, together with the polar-nonpolar structural phase transit…
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Trigonal PtBi$_2$ is one of the attractive van-der-Waals materials because of the enhancement of its superconducting transition temperature $T_{\rm{c}}$ by do** chalcogen elements such as Se and Te. Recently, it has been reported that $T_{\rm{c}}$ of Pt(Bi$_{1-x}$Se$_x$)$_2$ is enhanced by a factor of 4, compared to the pristine PtBi$_2$, together with the polar-nonpolar structural phase transition. Thus, it is desirable to study electrical transport properties for this new superconducting compound. Here, we have performed magnetotransport measurements for Pt(Bi$_{1-x}$Se$_x$)$_2$ ($x$ = 0.06 and 0.08) thin-film devices and have observed a peculiar magnetoresistance where a finite hysteresis appears when the superconducting state is broken. By measuring the magnetoresistance systematically, we have attributed this magnetoresistance to the two-level critical-state where fluxons pinned in Pt(Bi$_{1-x}$Se$_x$)$_2$ play an important role.
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Submitted 30 April, 2024;
originally announced April 2024.
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Magnetotransport properties in van-der-Waals \textit{\textbf{R}}Te$_{3}$ (\textit{\textbf{R}} = La, Ce, Tb)
Authors:
Tomo Higashihara,
Ryotaro Asama,
Ryoya Nakamura,
Mori Watanabe,
Nanami Tomoda,
Thomas Johannes Hasiweder,
Yuita Fujisawa,
Yoshinori Okada,
Takuya Iwasaki,
Kenji Watanabe,
Takashi Taniguchi,
Nan Jiang,
Yasuhiro Niimi
Abstract:
Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility, but also with various states such as superconductivity under high pressure, incommensurate charge-density-wave (CDW) phase, and multiple antiferromagnetic phases. In this work, we performed longitudinal resistivity and Hall resistivity measurements simultaneous…
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Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility, but also with various states such as superconductivity under high pressure, incommensurate charge-density-wave (CDW) phase, and multiple antiferromagnetic phases. In this work, we performed longitudinal resistivity and Hall resistivity measurements simultaneously in exfoliated $R$Te$_{3}$ ($R$ =La, Ce, Tb) thin film devices, in order to investigate the influence of magnetic ordering on transport properties in van-der-Waals magnetic materials. We have obtained carrier mobility and concentration using a two-band model, and have observed an increase in carrier mobility in the antiferromagnets CeTe$_{3}$ and TbTe$_{3}$ due to the magnetic transition. Especially in CeTe$_{3}$, the carrier concentration has changed drastically below the magnetic transition temperature, suggesting the interaction between the CDW and antiferromagnetic phases. In addition, the analysis of the Shubnikov-de Haas oscillations in CeTe$_{3}$ supports the possibility of Fermi surface modulation by magnetic ordering. This research will pave the way not only for spintronic devices that take advantage of high mobility, but also for the study of the correlation between CDW and magnetism states in low-dimensional materials.
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Submitted 3 April, 2024; v1 submitted 14 March, 2024;
originally announced March 2024.
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Magnetic field induced valence change in Eu(Co$_{1-x}$Ni$_{x}$)$_{2}$P$_{2}$ up to 60 T
Authors:
Raito Nakamura,
Azumi Ishita,
** Nakamura,
Hiroto Ohta,
Yuya Haraguchi,
Hiroko Aruga Katori,
Hajime Ishikawa,
Akira Matsuo,
Koichi Kindo,
Minoru Nohara,
Akihiko Ikeda
Abstract:
The solid solution 122 compounds, Eu(Co$_{1-x}$Ni$_{x}$)$_{2}$P$_{2}$, show valence transition between divalent state and intermediate valence states at Eu, which is firmly correlated to multiple degrees of freedom in the solid such as the isostructural transition between the collapsed tetragonal (cT) and uncollapsed tetragonal (ucT) structures, $3d$ magnetism, and the formation of P-P dimers. To…
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The solid solution 122 compounds, Eu(Co$_{1-x}$Ni$_{x}$)$_{2}$P$_{2}$, show valence transition between divalent state and intermediate valence states at Eu, which is firmly correlated to multiple degrees of freedom in the solid such as the isostructural transition between the collapsed tetragonal (cT) and uncollapsed tetragonal (ucT) structures, $3d$ magnetism, and the formation of P-P dimers. To gain insights into the correlated behavior, we investigate the effect of high magnetic fields on the samples of $x = 0.4$ and $0.5$ using magnetostriction and magnetization measurements up to 60 T. The samples are in the Eu valence fluctuating regime, where the possible structural transition from cT to ucT may be induced by the Eu valence change under the magnetic fields. For both samples, magnetostriction smoothly increases with increasing magnetic fields. The behavior is in good agreement with the calculated results using the interconfigurational fluctuation (ICF) model that describes the valence change. This indicates that $ΔL$ represents the change of the Eu valence state in these compounds. Magnetization curves for both compounds show good agreement with the ICF model at high magnetic fields. In contrast, in the low magnetic field region, magnetization curves do not agree with the ICF model. These results indicate that the Eu valence changes manifest themselves in the magnetization curves at high magnetic fields and that the magnetism of the $3d$ electrons manifests itself in the magnetization at low magnetic fields. Hence, we conclude that the valence change occurs within the Eu valence fluctuation regime coupled with the cT structure. Thereby, we believe that the transition to ucT structure which is firmly coupled with the divalent Eu state does not occur within the magnetic field range of the present study. (Continued)
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Submitted 18 May, 2023; v1 submitted 6 March, 2023;
originally announced March 2023.
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Higher harmonic resistance oscillations in micro-bridge superconducting Nb ring
Authors:
Masashi Tokuda,
Ryoya Nakamura,
Masaki Maeda,
Yasuhiro Niimi
Abstract:
We studied resistance oscillations in two types of superconducting mesoscopic Nb rings. In a simple superconducting ring device, a resistance oscillation with a period of the quantized magnetic flux h/2e was clearly observed. On the other hand, in a micro-bridge ring device where two-narrow parts are embedded in parallel and work as superconductor-normal metal-superconductor junctions, higher harm…
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We studied resistance oscillations in two types of superconducting mesoscopic Nb rings. In a simple superconducting ring device, a resistance oscillation with a period of the quantized magnetic flux h/2e was clearly observed. On the other hand, in a micro-bridge ring device where two-narrow parts are embedded in parallel and work as superconductor-normal metal-superconductor junctions, higher harmonic resistance oscillations were obtained when the measurement current was well-tuned. We argue that such higher harmonic resistance oscillations can be detected even in the micro-bridge Nb superconducting ring device where the device size is much larger than the coherence length of Nb.
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Submitted 31 May, 2022;
originally announced May 2022.
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Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin films at 1 T
Authors:
Ryoya Nakamura,
Masashi Tokuda,
Mori Watanabe,
Masamichi Nakajima,
Kensuke Kobayashi,
Yasuhiro Niimi
Abstract:
We studied flux pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin-film devices with a thickness $d$ from 30 to 150 nm by measuring the critical current density $J_{\mathrm{c}}$. In bulk FeTe$_{0.6}$Se$_{0.4}$, the flux pinning has been discussed in the framework of weak collective pinning, while there is little knowledge on the pinning mechanism in the thin-film region. From the thickness $d$ depe…
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We studied flux pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin-film devices with a thickness $d$ from 30 to 150 nm by measuring the critical current density $J_{\mathrm{c}}$. In bulk FeTe$_{0.6}$Se$_{0.4}$, the flux pinning has been discussed in the framework of weak collective pinning, while there is little knowledge on the pinning mechanism in the thin-film region. From the thickness $d$ dependence of $J_{\mathrm{c}}$ at a fixed magnetic field of 1 T, we found that the strong pinning is dominant below $d \approx 70$ nm, while the weak collective pinning becomes more important above $d \approx 100$ nm. This crossover thickness can be explained by the theoretical model proposed by van der Beek $\textit{et al}$ [Phys. Rev. B. ${\bf 66}$, 024523 (2002)].
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Submitted 20 October, 2021;
originally announced October 2021.
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Impact of silicon do** on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures
Authors:
S. Fallahi,
J. R. Nakamura,
G. C. Gardner,
M. M. Yannell,
M. J. Manfra
Abstract:
We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do** density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short…
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We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do** density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased do** density was observed. These measurements indicate that the {\it neutral} do** region plays a significant role in charge noise and conductance drift.
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Submitted 18 September, 2017;
originally announced September 2017.
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Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to $Δ_{5/2}$ and Impact of Density Fluctuations
Authors:
Qi Qian,
James R. Nakamura,
Saeed Fallahi,
Geoffrey C. Gardner,
John D. Watson,
Silvia Luscher,
Joshua A. Folk,
Gabor A. Csathy,
Michael J. Manfra
Abstract:
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscilla…
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We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $τ_q$ unless density inhomogeneity is explicitly considered; 2) $τ_q$ does not correlate well with quality as measured by $Δ_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling.
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Submitted 20 April, 2017;
originally announced April 2017.
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High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level
Authors:
Qi Qian,
James R. Nakamura,
Saeed Fallahi,
Geoffrey C. Gardner,
John D. Watson,
Michael J. Manfra
Abstract:
We report a high temperature (T = 0.3K) indicator of the excitation gap $Δ_{5/2}$ at the filling factor $ ν=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $μ$ and $Δ_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $ρ_{5/2}$, th…
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We report a high temperature (T = 0.3K) indicator of the excitation gap $Δ_{5/2}$ at the filling factor $ ν=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $μ$ and $Δ_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $ρ_{5/2}$, the resistivity at $ν=5/2$, as a high temperature predictor of $Δ_{5/2}$. This high-field resistivity reflects the scattering rate of composite fermions. Good correlation between $ρ_{5/2}$ and $Δ_{5/2}$ is observed in both a density tunable device and in a series of identically structured wafers with similar density but vastly different mobility. This correlation can be explained by the fact that both $ρ_{5/2}$ and $Δ_{5/2}$ are sensitive to long-range disorder from remote impurities, while $μ$ is sensitive primarily to disorder localized near the quantum well.
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Submitted 12 April, 2017;
originally announced April 2017.
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Collisionless magnetic reconnection: Flux quanta, field lines, `composite electrons' -- Is the quantum-Hall effect involved in its micro-scale physics?
Authors:
R. A. Treumann,
R. Nakamura,
W. Baumjohann
Abstract:
Microscopically, collisionless reconnection in thin current sheets is argued to involve `composite electrons' in the ion inertial (Hall current) domain, a tiny fraction of electrons only. These `composite electrons' are confined to lower Landau levels $ε_L\ll T_e$ (energy much less than temperature). They demagnetise by absorbing magnetic flux quanta $Φ_0=h/e$, decouple from the magnetic field, tr…
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Microscopically, collisionless reconnection in thin current sheets is argued to involve `composite electrons' in the ion inertial (Hall current) domain, a tiny fraction of electrons only. These `composite electrons' are confined to lower Landau levels $ε_L\ll T_e$ (energy much less than temperature). They demagnetise by absorbing magnetic flux quanta $Φ_0=h/e$, decouple from the magnetic field, transport the attached magnetic flux into the non-magnetic centre of the current layer, where they release the flux in the form of micro-scale magnetic vortices, becoming ordinary electrons. The newly born micro-scale magnetic vortices reconnect in their strictly anti-parallel sections when contacting other vortices, ultimately producing the meso-scale reconnection structure. We clarify the notions of magnetic field lines and field line radius, estimate the power released when two oppositely directed flux quanta annihilate, and calculate the number density and Landau-level filling-factor of `composite electrons' in the Hall domain. As side product we find that the magnetic diffusion coefficient in plasma also appears in quanta $D_0^m=eΦ_0/m_e=h/m_e$, yielding that the bulk perpendicular plasma resistivity is quantised, with quantum (lowest limit) $η_{\,0\perp}=μ_0 eΦ_0/m_e=μ_0h/m_e\sim 10^{-9}$ Ohm m.
Keywords: Reconnection, thin current sheets, quantum Hall effect, quantised diffusivity, quantised plasma resistivity, composite electrons
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Submitted 5 March, 2011;
originally announced March 2011.
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Two Phase Collective Modes in Josephson Vortex Lattice in Intrinsic Josephson Junction Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
Authors:
I. Kakeya,
T. Wada,
R. Nakamura,
K. Kadowaki
Abstract:
Josephson plasma excitations in the high $T_c$ superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ have been investigated in a wide microwave frequency region (9.8 -- 75 GHz), in particular, in magnetic field applied parallel to the $ab$ plane of the single crystal. In sharp contrast to the case for magnetic fields parallel to the c axis or tilted from the $ab$ plane, it was found that there are two ki…
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Josephson plasma excitations in the high $T_c$ superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ have been investigated in a wide microwave frequency region (9.8 -- 75 GHz), in particular, in magnetic field applied parallel to the $ab$ plane of the single crystal. In sharp contrast to the case for magnetic fields parallel to the c axis or tilted from the $ab$ plane, it was found that there are two kinds of resonance modes, which are split in energy and possess two distinctly different magnetic field dependences. One always lies higher in energy than the other and has a shallow minimum at about 0.8 kOe, then increases linearly with magnetic field. On the other hand, another mode begins to appear only in a magnetic field (from a few kOe and higher) and has a weakly decreasing tendency with increasing magnetic field. By comparing with a recent theoretical model the higher energy mode can naturally be attributed to the Josephson plasma resonance mode propagating along the primitive reciprocal lattice vector of the Josephson vortex lattice, whereas the lower frequency mode is assigned to the novel phase collective mode of the Josephson vortex lattice, which has never been observed before.
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Submitted 6 July, 2005; v1 submitted 20 March, 2005;
originally announced March 2005.
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Josephson Plasma Resonance in Solid and Glass Phases of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
Authors:
I. Kakeya,
R. Nakamura,
T. Wada,
K. Kadowaki
Abstract:
Vortex matter phases and phase transitions are investigated by means of Josephson plasma resonance in under-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals in a microwave frequency range between 19 and 70 GHz. Accompanied by the vortex lattice melting transition, a jump of the interlayer phase coherence extracted from the field dependence of the plasma frequency was observed. In the solid ph…
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Vortex matter phases and phase transitions are investigated by means of Josephson plasma resonance in under-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals in a microwave frequency range between 19 and 70 GHz. Accompanied by the vortex lattice melting transition, a jump of the interlayer phase coherence extracted from the field dependence of the plasma frequency was observed. In the solid phase, the interlayer coherence little depends on field at a temperature region well below $T_c$ while it gradually decreases as field increases toward the melting line up to just below $T_c$. As a result, the magnitude of the jump decreases with increasing temperature and is gradually lost in the vicinity of $T_c$. This indicates that the vortex lines formed in the vortex solid phase are thermally meandering and the phase transition becomes weak especially just below $T_c$.
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Submitted 16 October, 2000; v1 submitted 27 September, 2000;
originally announced September 2000.
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Josephson Plasma Mode in Fields Parallel to Layers of Bi_2Sr_2CaCu_2O_{8+δ}
Authors:
I. Kakeya,
T. Wada,
R. Nakamura,
K. Kaodowaki
Abstract:
Josephson plasma resonance measurements under magnetic fields parallel to the CuO_2 layers as functions of magnetic field, temperature, and microwave frequency have been performed in Bi_2Sr_2CaCu_2O_{8+δ} single crystals with do** range being from optimal to under-doped side. The feature of the resonance is quite unique and cannot be explained by the conventional understandings of the Josephso…
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Josephson plasma resonance measurements under magnetic fields parallel to the CuO_2 layers as functions of magnetic field, temperature, and microwave frequency have been performed in Bi_2Sr_2CaCu_2O_{8+δ} single crystals with do** range being from optimal to under-doped side. The feature of the resonance is quite unique and cannot be explained by the conventional understandings of the Josephson plasma for H \parallel c, that requires a new theory including coupling effect between Josephson vortex lattice and Josephson plasma.
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Submitted 7 June, 2000;
originally announced June 2000.
