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Muon spin relaxation in mixed perovskite (LaAlO$_3$)$_{x}$(SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{1-x}$ with $x\simeq 0.3$
Authors:
Takashi U. Ito,
Wataru Higemoto,
Akihiro Koda,
Jumpei G. Nakamura,
Koichiro Shimomura
Abstract:
We report on muon spin relaxation ($μ^+$SR) measurements in a mixed perovskite compound, (LaAlO$_3$)$_{x}$(SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{1-x}$ with $x\simeq 0.3$ (LSAT), which is widely used as a single-crystalline substrate for thin film deposition. In zero applied field (ZF), muon depolarization due to the distribution of nuclear dipole fields was observed in the temperature range from 4 K to 2…
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We report on muon spin relaxation ($μ^+$SR) measurements in a mixed perovskite compound, (LaAlO$_3$)$_{x}$(SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{1-x}$ with $x\simeq 0.3$ (LSAT), which is widely used as a single-crystalline substrate for thin film deposition. In zero applied field (ZF), muon depolarization due to the distribution of nuclear dipole fields was observed in the temperature range from 4 K to 270 K. Interestingly, $μ^+$SR time spectra in ZF maintained a Gaussian-like feature over the entire range, while the depolarization rate exhibited a monotonic decrease with increasing temperature. This behavior may be attributed to the thermally activated diffusion of muons between a few adjacent sites within a confined space of the angstrom scale, where the motionally averaged local field that each muon experiences can remain non-zero and result in maintaining the Gaussian-like line shape. The spatial distribution of electrostatic potential at lattice interstices evaluated via density functional theory calculations suggests that such a restriction of muon diffusion paths can be caused by the random distribution of cations with different nominal valences in the mixed perovskite lattice.
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Submitted 27 May, 2024;
originally announced May 2024.
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Quantum Criticality in YbCu4Ni
Authors:
Kotaro Osato,
Takanori Taniguchi,
Hirotaka Okabe,
Takafumi Kitazawa,
Masahiro Kawamata,
Zhao Hongfei,
Yoichi Ikeda,
Yusuke Nambu,
Dita Puspita Sari,
Isao Watanabe,
Jumpei G Nakamura,
Akihiro Koda,
Jun Gouchi,
Yoshiya Uwatoko,
Masaki Fujita
Abstract:
We report on the quantum criticality of YbCu$_4$Ni as revealed by our combined micro- and macro-measurements. We determine the crystal structure of YbCu$_4$Ni with site mixing by neutron diffraction measurements, which suggests the possible presence of Kondo disorder. However, decreasing the local spin susceptibility distribution and the development of spin fluctuations below 10 K at ambient press…
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We report on the quantum criticality of YbCu$_4$Ni as revealed by our combined micro- and macro-measurements. We determine the crystal structure of YbCu$_4$Ni with site mixing by neutron diffraction measurements, which suggests the possible presence of Kondo disorder. However, decreasing the local spin susceptibility distribution and the development of spin fluctuations below 10 K at ambient pressure by muon spin rotation and relaxation measurements suggests that YbCu4Ni exhibits quantum criticality. Therefore, our experimental results indicate that YbCu4Ni is a new material that exhibits quantum criticality under a zero magnetic field and ambient pressure.
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Submitted 20 December, 2023;
originally announced December 2023.
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Magnetic Instability of Pr3Ru4Sn13
Authors:
Takanori Taniguchi,
Shinnosuke Kitayama,
Hirotaka Okabe,
Jumpei G. Nakamura,
Akihiro Koda,
Motoyuki Ishikado,
Masaki Fujita
Abstract:
We report on the quantum criticality of Pr$_3$Ru$_4$Sn$_{13}$ revealed by our new material research. Pr$_3$Ru$_4$Sn$_{13}$ has been synthesized by flux growth and characterized by single X-ray, powder X-ray, and powder neutron diffraction measurements. The compound adopts a Yb$_3$Rh$_4$Sn$_{13}$-type structure with a cubic Pm$\bar{3}$n. From the magnetization at 1 T, the effective magnetic moment…
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We report on the quantum criticality of Pr$_3$Ru$_4$Sn$_{13}$ revealed by our new material research. Pr$_3$Ru$_4$Sn$_{13}$ has been synthesized by flux growth and characterized by single X-ray, powder X-ray, and powder neutron diffraction measurements. The compound adopts a Yb$_3$Rh$_4$Sn$_{13}$-type structure with a cubic Pm$\bar{3}$n. From the magnetization at 1 T, the effective magnetic moment was estimated to be 3.58 $μ_B$ per Pr$^{3+}$, suggesting that the magnetism is mainly contributed by Pr$^{3+}$ ions. The specific heat and magnetization show an anomaly at $T_{N} = 7.5$ ~ K owing to the phase transition. The muon spin rotation and relaxation ($μ$SR) time spectra exhibit clear oscillations below $T_N$. This suggests that the phase is magnetically ordered. The volume fraction of the magnetic phase estimated from the initial asymmetry is around ten percent. In addition, spin fluctuations were observed at low temperatures. These results provide microscopic evidence that the material is closest to the antiferromagnetically quantum critical point with a partial order among Pr$_3$$T_4$Sn$_{13}$ ($T= $ Co, Ru, Rh).
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Submitted 6 October, 2023;
originally announced October 2023.
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Fabry-Perot interferometry at the $ν$ = 2/5 fractional quantum Hall state
Authors:
James Nakamura,
Shuang Liang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
Electronic Fabry-P{é}rot interferometry is a powerful method to probe quasiparticle charge and anyonic braiding statistics in the fractional quantum Hall regime. We extend this technique to the hierarchy $ν= 2/5$ fractional quantum Hall state, possessing two edge modes that in our device can be interfered independently. The outer edge mode exhibits interference similar to the behavior observed at…
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Electronic Fabry-P{é}rot interferometry is a powerful method to probe quasiparticle charge and anyonic braiding statistics in the fractional quantum Hall regime. We extend this technique to the hierarchy $ν= 2/5$ fractional quantum Hall state, possessing two edge modes that in our device can be interfered independently. The outer edge mode exhibits interference similar to the behavior observed at the $ν= 1/3$ state, indicating that the outer edge mode at $ν= 2/5$ has properties similar to the single mode at $ν= 1/3$. The inner mode shows an oscillation pattern with a series of discrete phase jumps indicative of distinct anyonic braiding statistics. After taking into account the impact of bulk-edge coupling, we extract an interfering quasiparticle charge ${e^*} = 0.17 \pm 0.02$ and anyonic braiding phase $θ_a = (-0.43 \pm 0.05)\times 2π$, which serve as experimental verification of the theoretically predicted values of $e^* = \frac{1}{5}$ and $θ_a = -\frac{4π}{5}$.
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Submitted 24 April, 2023;
originally announced April 2023.
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Magnetic field induced valence change in Eu(Co$_{1-x}$Ni$_{x}$)$_{2}$P$_{2}$ up to 60 T
Authors:
Raito Nakamura,
Azumi Ishita,
** Nakamura,
Hiroto Ohta,
Yuya Haraguchi,
Hiroko Aruga Katori,
Hajime Ishikawa,
Akira Matsuo,
Koichi Kindo,
Minoru Nohara,
Akihiko Ikeda
Abstract:
The solid solution 122 compounds, Eu(Co$_{1-x}$Ni$_{x}$)$_{2}$P$_{2}$, show valence transition between divalent state and intermediate valence states at Eu, which is firmly correlated to multiple degrees of freedom in the solid such as the isostructural transition between the collapsed tetragonal (cT) and uncollapsed tetragonal (ucT) structures, $3d$ magnetism, and the formation of P-P dimers. To…
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The solid solution 122 compounds, Eu(Co$_{1-x}$Ni$_{x}$)$_{2}$P$_{2}$, show valence transition between divalent state and intermediate valence states at Eu, which is firmly correlated to multiple degrees of freedom in the solid such as the isostructural transition between the collapsed tetragonal (cT) and uncollapsed tetragonal (ucT) structures, $3d$ magnetism, and the formation of P-P dimers. To gain insights into the correlated behavior, we investigate the effect of high magnetic fields on the samples of $x = 0.4$ and $0.5$ using magnetostriction and magnetization measurements up to 60 T. The samples are in the Eu valence fluctuating regime, where the possible structural transition from cT to ucT may be induced by the Eu valence change under the magnetic fields. For both samples, magnetostriction smoothly increases with increasing magnetic fields. The behavior is in good agreement with the calculated results using the interconfigurational fluctuation (ICF) model that describes the valence change. This indicates that $ΔL$ represents the change of the Eu valence state in these compounds. Magnetization curves for both compounds show good agreement with the ICF model at high magnetic fields. In contrast, in the low magnetic field region, magnetization curves do not agree with the ICF model. These results indicate that the Eu valence changes manifest themselves in the magnetization curves at high magnetic fields and that the magnetism of the $3d$ electrons manifests itself in the magnetization at low magnetic fields. Hence, we conclude that the valence change occurs within the Eu valence fluctuation regime coupled with the cT structure. Thereby, we believe that the transition to ucT structure which is firmly coupled with the divalent Eu state does not occur within the magnetic field range of the present study. (Continued)
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Submitted 18 May, 2023; v1 submitted 6 March, 2023;
originally announced March 2023.
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Half-integer conductance plateau at the $ν= 2/3$ fractional quantum Hall state in a quantum point contact
Authors:
James Nakamura,
Shuang Liang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This pl…
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The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This plateau is observed in multiple QPCs, and persists over a significant range of magnetic field, gate voltage, and source-drain bias, making it a robust feature. Using a simple model which considers scattering and equilibration between counterflowing charged edge modes, we find this half-integer quantized plateau to be consistent with full reflection of an inner counterpropagating -1/3 edge mode while the outer integer mode is fully transmitted. In a QPC fabricated on a different heterostructure which has a softer confining potential, we instead observe an intermediate conductance plateau at $G = \frac{1}{3} \frac{e^2}{h}$. These results provide support for a model at $ν= 2/3$ in which the edge transitions from a structure having an inner upstream -1/3 charge mode and outer downstream integer mode to a structure with two downstream 1/3 charge modes when the confining potential is tuned from sharp to soft and disorder prevails.
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Submitted 20 December, 2022; v1 submitted 30 November, 2022;
originally announced November 2022.
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Impact of bulk-edge coupling on observation of anyonic braiding statistics in quantum Hall interferometers
Authors:
James Nakamura,
Shuang Liang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
Quantum Hall interferometers have been used to probe fractional charge, and more recently, fractional statistics of quasiparticles. Theoretical predictions have been made regarding the effect of electrostatic coupling on interferometer behavior and observation of anyonic phases. Here we present measurements of a small Fabry-Perot interferometer in which these electrostatic coupling constants can b…
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Quantum Hall interferometers have been used to probe fractional charge, and more recently, fractional statistics of quasiparticles. Theoretical predictions have been made regarding the effect of electrostatic coupling on interferometer behavior and observation of anyonic phases. Here we present measurements of a small Fabry-Perot interferometer in which these electrostatic coupling constants can be determined experimentally, facilitating quantitative comparison with theory. At the $ν= 1/3$ fractional quantum Hall state, this device exhibits Aharonov-Bohm interference near the center of the conductance plateau interrupted by a few discrete phase jumps, and $Φ_0$ oscillations at higher and lower magnetic fields, consistent with theoretical predictions for detection of anyonic statistics. We estimate the electrostatic parameters $K_I$ and $K_{IL}$ by two methods: by the ratio of oscillation periods in compressible versus incompressible regions, and from finite-bias conductance measurements, and these two methods yield consistent results. We find that the extracted $K_I$ and $K_{IL}$ can account for the deviation of the values of the discrete phase jumps from the theoretically predicted anyonic phase $θ_a = 2π/3$. In the integer quantum Hall regime, we find that the experimental values of $K_I$ and $K_{IL}$ can account for the the observed Aharonov-Bohm and Coulomb dominated behavior of different edge states.
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Submitted 5 July, 2021;
originally announced July 2021.
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Direct observation of anyonic braiding statistics at the $ν$=1/3 fractional quantum Hall state
Authors:
James Nakamura,
Shuang Liang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $ν=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $ν=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $θ_{anyon}=\frac{2π}{3}$. Our results are consistent…
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Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $ν=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $ν=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $θ_{anyon}=\frac{2π}{3}$. Our results are consistent with a recent theory of a Fabry-Perot interferometer operated in a regime in which device charging energy is small compared to the energy of formation of charged quasiparticles. Close correspondence between device operation and theoretical predictions substantiates our claim of observation of anyonic braiding.
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Submitted 24 June, 2020;
originally announced June 2020.
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Aharonov-Bohm interference of fractional quantum Hall edge modes
Authors:
James Nakamura,
Saeed Fallahi,
Harshad Sahasrabudhe,
Rajib Rahman,
Shuang Liang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
We demonstrate operation of a small Fabry-Perot interferometer in which highly coherent Aharonov-Bohm oscillations are observed in the integer and fractional quantum Hall regimes. Using a novel heterostructure design, Coulomb effects are drastically suppressed. Coherency of edge mode interference is characterized by the energy scale for thermal dam**, ${T_0=206}mK$ at $ν=1$. Selective backscatte…
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We demonstrate operation of a small Fabry-Perot interferometer in which highly coherent Aharonov-Bohm oscillations are observed in the integer and fractional quantum Hall regimes. Using a novel heterostructure design, Coulomb effects are drastically suppressed. Coherency of edge mode interference is characterized by the energy scale for thermal dam**, ${T_0=206}mK$ at $ν=1$. Selective backscattering of edge modes originating in the ${N=0,1,2}$ Landau levels allows for independent determination of inner and outer edge mode velocities. Clear Aharonov-Bohm oscillations are observed at fractional filling factors $ν=2/3$ and $ν=1/3$. Our device architecture provides a platform for measurement of anyonic braiding statistics.
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Submitted 24 January, 2019;
originally announced January 2019.
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Possible nematic to smectic phase transition in a two-dimensional electron gas at half-filling
Authors:
Q. Qian,
J. Nakamura,
S. Fallahi,
G. C. Gardner,
M. J. Manfra
Abstract:
Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and transl…
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Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and translational symmetries. However, previous experiments in 2DES are most consistent with an anisotropic nematic phase breaking only rotational symmetry. Here we report three transport phenomena at half-filling in ultra-low disorder 2DES: a non-monotonic temperature dependence of the sample resistance, dramatic onset of large time-dependent resistance fluctuations, and a sharp feature in the differential resistance suggestive of depinning. These data suggest that a sequence of symmetry-breaking phase transitions occurs as temperature is lowered: first a transition from an isotropic liquid to a nematic phase and finally to a liquid crystal smectic phase.
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Submitted 17 November, 2017;
originally announced November 2017.
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Impact of silicon do** on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures
Authors:
S. Fallahi,
J. R. Nakamura,
G. C. Gardner,
M. M. Yannell,
M. J. Manfra
Abstract:
We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do** density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short…
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We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do** density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased do** density was observed. These measurements indicate that the {\it neutral} do** region plays a significant role in charge noise and conductance drift.
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Submitted 18 September, 2017;
originally announced September 2017.
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Optimization of edge state velocity in the integer quantum Hall regime
Authors:
Harshad Sahasrabudhe,
Bozidar Novakovic,
James Nakamura,
Saeed Fallahi,
Michael Povolotskyi,
Gerhard Klimeck,
Rajib Rahman,
Michael J. Manfra
Abstract:
Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here, we present a new simulation method for realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. We ca…
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Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here, we present a new simulation method for realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. We calculate the filling fraction in the center of the QPC and the velocity of the edge states, and predict structures with high edge state velocity. The 3D Schrödinger equation is split into 1D and 2D parts. Quasi-1D Schrödinger and Poisson equations are solved self-consistently in the IQHE regime to obtain the potential profile near the edges, and quantum transport is used to solve for the edge state wavefunctions. The velocity of edge states is found to be $\left< E \right> / B$, where $\left< E \right>$ is the expectation value of the electric field for the edge state. Anisotropically etched trench gated heterostructures with double sided delta do** have the highest edge state velocity among the structures considered.
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Submitted 28 November, 2017; v1 submitted 19 May, 2017;
originally announced May 2017.
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Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to $Δ_{5/2}$ and Impact of Density Fluctuations
Authors:
Qi Qian,
James R. Nakamura,
Saeed Fallahi,
Geoffrey C. Gardner,
John D. Watson,
Silvia Luscher,
Joshua A. Folk,
Gabor A. Csathy,
Michael J. Manfra
Abstract:
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscilla…
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We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $τ_q$ unless density inhomogeneity is explicitly considered; 2) $τ_q$ does not correlate well with quality as measured by $Δ_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling.
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Submitted 20 April, 2017;
originally announced April 2017.
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High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level
Authors:
Qi Qian,
James R. Nakamura,
Saeed Fallahi,
Geoffrey C. Gardner,
John D. Watson,
Michael J. Manfra
Abstract:
We report a high temperature (T = 0.3K) indicator of the excitation gap $Δ_{5/2}$ at the filling factor $ ν=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $μ$ and $Δ_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $ρ_{5/2}$, th…
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We report a high temperature (T = 0.3K) indicator of the excitation gap $Δ_{5/2}$ at the filling factor $ ν=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $μ$ and $Δ_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $ρ_{5/2}$, the resistivity at $ν=5/2$, as a high temperature predictor of $Δ_{5/2}$. This high-field resistivity reflects the scattering rate of composite fermions. Good correlation between $ρ_{5/2}$ and $Δ_{5/2}$ is observed in both a density tunable device and in a series of identically structured wafers with similar density but vastly different mobility. This correlation can be explained by the fact that both $ρ_{5/2}$ and $Δ_{5/2}$ are sensitive to long-range disorder from remote impurities, while $μ$ is sensitive primarily to disorder localized near the quantum well.
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Submitted 12 April, 2017;
originally announced April 2017.
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Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms
Authors:
Takahiro Kondo,
Simone Casolo,
Tetsuya Suzuki,
Taishi Shikano,
Masataka Sakurai,
Yoshihisa Harada,
Makoto Saito,
Masaharu Oshima,
Mario Italo Trioni,
Gian Franco Tantardini,
Junji Nakamura
Abstract:
We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridi…
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We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridinic-N (N bonded to two C nearest neighbours) and graphitic-N (N bonded to three C nearest neighbours). Distinct electronic states of localized π states were found to appear in the occupied and unoccupied regions near the Fermi level at the carbon atoms around pyridinic-N and graphitic-N species, respectively. The origin of these states is discussed based on the experimental results and theoretical simulations.
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Submitted 25 July, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
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Holes in the valence band of superconducting boron-doped diamond film studied by soft X-ray absorption and emission spectroscopy
Authors:
** Nakamura,
Tamio Oguchi,
Nobuyoshi Yamada,
Kazuhiko Kuroki,
Kozo Okada,
Yoshihiko Takano,
Masanori Nagao,
Isao Sakaguchi,
Hiroshi Kawarada,
Rupert C. C. Perera,
David L. Ederer
Abstract:
Carbon- and boron-2$p$ states of superconducting and non-superconducting boron-doped diamond samples are measured using soft X-ray emission and absorption spectroscopy. For the superconducting sample, a large density of hole states is observed in the valence band in addition to the states in the impurity band. The hole states in the valence band is located at about 1.3 eV below the valence band…
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Carbon- and boron-2$p$ states of superconducting and non-superconducting boron-doped diamond samples are measured using soft X-ray emission and absorption spectroscopy. For the superconducting sample, a large density of hole states is observed in the valence band in addition to the states in the impurity band. The hole states in the valence band is located at about 1.3 eV below the valence band maximum regardless of the do** level, which cannot be interpreted within a simple rigid band model. Present experimental results, combined with the first principles calculations, suggest that superconductivity is to be attributed to the holes in the valence band.
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Submitted 13 October, 2004; v1 submitted 6 October, 2004;
originally announced October 2004.
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Electronic structures of B-2p and C-2p of boron-doped diamond film by soft X-ray absorption and emission spectroscopy
Authors:
** Nakamura,
Eiki Kabasawa,
Nobuyoshi Yamada,
Yasuaki Einaga,
Daisuke Saito,
Hideo Isshiki,
Shigemi Yugo,
Rupert C. C. Perera
Abstract:
X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films. Both B-K XAS and XES spectra shows metallic partial density of state (PDOS) with the Fermi energy of 185.3 eV, and there is no apparent boron-concentration dependence in contrast to the different ele…
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X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films. Both B-K XAS and XES spectra shows metallic partial density of state (PDOS) with the Fermi energy of 185.3 eV, and there is no apparent boron-concentration dependence in contrast to the different electric property. In C-K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of non-doped diamond, E_V, 283.9 eV. C-K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep-and-broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (E_a=0.37 eV) estimated from the temperature dependence of the conductivity, namely the change in C-2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is mainly ascribed to the electronic structure of C-2p near the Fermi level. The observed XES spectra are compared with the DVX-alpha cluster calculation. The DVX-alpha result supports the strong hybridization between B-2p and C-2p observed in XAS and XES spectra, and suggests that the small amount of borons (<1at%) in diamond occupy the substitutional site rather than interstitial site.
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Submitted 16 July, 2004; v1 submitted 16 July, 2004;
originally announced July 2004.
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Multiple Bosonic Mode Coupling in Electron Self-Energy of (La_2-xSr_x)CuO_4
Authors:
X. J. Zhou,
Junren Shi,
T. Yoshida,
T. Cuk,
W. L. Yang,
V. Brouet,
J. Nakamura,
N. Mannella,
Seiki Komiya,
Yoichi Ando,
F. Zhou,
W. X. Ti,
J. W. Xiong,
Z. X. Zhao,
T. Sasagawa,
T. Kakeshita,
H. Eisaki,
S. Uchida,
A. Fujimori,
Zhenyu Zhang,
E. W. Plummer,
R. B. Laughlin,
Z. Hussain,
Z. -X. Shen
Abstract:
High resolution angle-resolved photoemission spectroscopy data along the (0,0)-($π$,$π$) nodal direction with significantly improved statistics reveal fine structure in the electron self-energy of the underdoped (La$_{2-x}$Sr$_x$)CuO$_4$ samples in the normal state. Fine structure at energies of (40$\sim$46) meV and (58$\sim$63)meV, and possible fine structure at energies of (23$\sim$29)meV and…
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High resolution angle-resolved photoemission spectroscopy data along the (0,0)-($π$,$π$) nodal direction with significantly improved statistics reveal fine structure in the electron self-energy of the underdoped (La$_{2-x}$Sr$_x$)CuO$_4$ samples in the normal state. Fine structure at energies of (40$\sim$46) meV and (58$\sim$63)meV, and possible fine structure at energies of (23$\sim$29)meV and (75$\sim$85)meV, have been identified. These observations indicate that, in LSCO, more than one bosonic modes are involved in the coupling with electrons.
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Submitted 29 July, 2005; v1 submitted 6 May, 2004;
originally announced May 2004.
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Kinetics and thermodynamics of the degree of order of the B cations in double-perovskite Sr2FeMoO6
Authors:
T. Shimada,
J. Nakamura,
T. Motohashi,
H. Yamauchi,
M. Karppinen
Abstract:
Here we show that the B-site cation (Fe/Mo) ordering in the double-perovskite magnetoresistor, Sr2FeMoO6, is controlled by either kinetics or thermal equilibrium depending on the temperature range. In order to enhance the ordering, long synthesis periods at moderate temperatures are thus required. Employment of a special oxygen-getter-controlled low-O2-pressure encapsulation technique for the sa…
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Here we show that the B-site cation (Fe/Mo) ordering in the double-perovskite magnetoresistor, Sr2FeMoO6, is controlled by either kinetics or thermal equilibrium depending on the temperature range. In order to enhance the ordering, long synthesis periods at moderate temperatures are thus required. Employment of a special oxygen-getter-controlled low-O2-pressure encapsulation technique for the sample synthesis enabled us to use long heating periods without evident evaporation of Mo, and thereby reach the thermal equilibrium state and a high degree of B-site cation order. For samples fired at 1150C for long periods (> 36 hours), record-high Ms values of 3.7 ~ 3.9 muB were obtained.
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Submitted 16 September, 2003;
originally announced September 2003.
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Electronic Structure of B-2$pσ$ and $pπ$ States in MgB$_2$, AlB$_2$ and ZrB$_2$ Single Crystals
Authors:
J. Nakamura,
S. Nasubida,
E. Kabasawa,
H. Yamazaki,
N. Yamada,
K. Kuroki,
M. Watanabe,
T. Oguchi,
S. Lee,
A. Yamamoto,
S. Tajima,
Y. Umeda,
S. Minakawa,
N. Kimura,
H. Aoki,
S. Otani,
S. Shin,
T. A. Callcott,
D. L. Ederer,
J. D. Denlinger,
R. C. C. Perera
Abstract:
The effect of electron correlation (EC) on the electronic structure in MgB$_2$, AlB$_2$ and ZrB$_2$, is studied by examining the partial density of states (PDOS) of B-2$pσ$ and $pπ$ orbitals using the polarization dependence of x-ray emission and absorption spectra. The discrepancies between observed and calculated PDOSs cannot be attributed to EC effects. The present results suggest that the EC…
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The effect of electron correlation (EC) on the electronic structure in MgB$_2$, AlB$_2$ and ZrB$_2$, is studied by examining the partial density of states (PDOS) of B-2$pσ$ and $pπ$ orbitals using the polarization dependence of x-ray emission and absorption spectra. The discrepancies between observed and calculated PDOSs cannot be attributed to EC effects. The present results suggest that the EC effect is less than the experimental error ($\sim$ 0.2 eV), which indirectly supports a scenario that electron-phonon interaction plays an essential role in the occurrence of superconductivity.
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Submitted 15 July, 2003;
originally announced July 2003.
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Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99
Authors:
V. P. S. Awana,
J. Nakamura,
M. Karppinen,
H. Yamauchi,
S. K. Malik
Abstract:
Pr0.9Sr0.1CoO2.99 sample exhibits magnetoresistivity (MR) of up to 40 % at 5 K with a strong hysteresis/memory effect. Magnetisation measurements on Pr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperature decreases, the zero-field-cooled (ZFC) and field-cooled (FC) magnetisation curves branch clearly at 50 K, and a cusp appears in the ZFC branch at Tcusp 20 K. Magnetisation mea…
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Pr0.9Sr0.1CoO2.99 sample exhibits magnetoresistivity (MR) of up to 40 % at 5 K with a strong hysteresis/memory effect. Magnetisation measurements on Pr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperature decreases, the zero-field-cooled (ZFC) and field-cooled (FC) magnetisation curves branch clearly at 50 K, and a cusp appears in the ZFC branch at Tcusp 20 K. Magnetisation measurements in various fields between 100 and 10,000 Oe show that both the ZFC-FC branching temperature and, Tcusp, decrease with increasing field. The magnetization-field isotherms at 5 and 10 K show hysteresis loops typical of ferromagnets. No appreciable MR is seen in this compound at 50 K, i.e. at a temperature close to ZFC-FC branching temperature. At 20 K, negative MR of above 16% is observed without any hysteresis effect. We believe that the appearance of a ferromagnetic component at 5 K and 10 K (i.e. at temperatures below Tcusp) within the spin glass state of Co spins is responsible for both large MR and the prominent hysteresis/memory effect in MR.
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Submitted 17 October, 2002;
originally announced October 2002.
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Electronic Structure of B-2p State in AlB2 Single Crystal: Direct Observation ofpσand pπDensity of States
Authors:
** Nakamura,
Masamitsu Watanabe,
Tamio Oguchi,
Sin-ya Nasubida,
Eiki Kabasawa,
Nobuyoshi Yamada,
Kazuhiko Kuroki,
Hisashi Yamazaki,
Shik Shin,
Yuji Umeda,
Shin Minakawa,
Noriaki Kimura,
Haruyoshi Aoki
Abstract:
X-ray emission (XES) and absorption (XAS) spectra near the B-$K$ edge were measured on single-crystalline AlB$_2$ compound which is an isostructural diboride of superconducting MgB$_2$. The partial density of states (PDOS) of B-2$pσ$ and $pπ$ orbitals were derived from the polarization dependence of XES and XAS spectra. There are considerable amounts of PDOS near the Fermi energy in AlB$_2$ simi…
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X-ray emission (XES) and absorption (XAS) spectra near the B-$K$ edge were measured on single-crystalline AlB$_2$ compound which is an isostructural diboride of superconducting MgB$_2$. The partial density of states (PDOS) of B-2$pσ$ and $pπ$ orbitals were derived from the polarization dependence of XES and XAS spectra. There are considerable amounts of PDOS near the Fermi energy in AlB$_2$ similarly to that in MgB$_2$, but there are almost no PDOS in $pσ$ orbitals of AlB$_2$ near the Fermi energy, i.e., a pseudo-gap in $pσ$ state and a broad metallic state in $pπ$ state are observed. The present result indirectly supports scenarios that the $pσ$ holes play an important role in the occurrence of superconductivity in MgB$_2$. The overall features of PDOS were found to be in good agreement with the result of band calculation of AlB$_2$, but a small discrepancy in the Fermi energy is observed, which is attributed to the Al vacancy in the compounds, i.e., the estimated concentration is Al$_{0.93}$B$_2$.
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Submitted 21 December, 2001;
originally announced December 2001.
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Soft x-ray spectroscopy experiments on the near K-edge of B in MB2 (M=Mg, Al, Ta, and Nb)
Authors:
J. Nakamura,
N. Yamada,
K. Kuroki,
T. A. Callcott,
D. L. Ederer,
J. D. Denlinger,
R. C. C. Perera
Abstract:
Soft X-ray absorption and emission measurements are performed for the K- edge of B in MB$_2$ (M=Mg, Al, Ta and Nb). Unique feature of MgB$_2$ with a high density of B 2$p_{xy}(σ)$-state below and above the Fermi edge, which extends to 1 eV above the edge, is confirmed. In contrast, the B 2$p$ density of states in AlB$_2$ and TaB$_2$, both of occupied and unoccupied states, decreased linearly tow…
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Soft X-ray absorption and emission measurements are performed for the K- edge of B in MB$_2$ (M=Mg, Al, Ta and Nb). Unique feature of MgB$_2$ with a high density of B 2$p_{xy}(σ)$-state below and above the Fermi edge, which extends to 1 eV above the edge, is confirmed. In contrast, the B 2$p$ density of states in AlB$_2$ and TaB$_2$, both of occupied and unoccupied states, decreased linearly towards the Fermi energy and showed a dip at the Fermi energy. Furthermore, there is a broadening of the peaks with $pσ$-character in XES and XAS of AlB$_2$, which is due to the increase of three dimensionality in the $pσ$-band in AlB$_2$. The DOS of NbB$_2$ has a dip just below the Fermi energy. The present results indicate that the large DOS of B-2$pσ$ states near the Fermi energy are crucial for the superconductivity of MgB$_2$.
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Submitted 15 August, 2001; v1 submitted 13 August, 2001;
originally announced August 2001.
