Showing 1–19 of 19 results for author: Nair, H P

Local magnetic response of superconducting Sr$\mathrm{_2}$RuO$\mathrm{_4}$ thin films and rings

Authors: G. M. Ferguson, Hari P. Nair, Nathaniel J. Schreiber, Ludi Miao, Kyle M. Shen, Darrell G. Schlom, Katja C. Nowack

Abstract: We conduct local magnetic measurements on superconducting thin-film samples of Sr$\mathrm{_2}$RuO$\mathrm{_4}$ using scanning Superconducting Quantum Interference Device (SQUID) susceptometry. From the diamagnetic response, we extract the magnetic penetration depth, $λ$, which exhibits a quadratic temperature dependence at low temperatures. Although a quadratic dependence in high-purity bulk sampl… ▽ More We conduct local magnetic measurements on superconducting thin-film samples of Sr$\mathrm{_2}$RuO$\mathrm{_4}$ using scanning Superconducting Quantum Interference Device (SQUID) susceptometry. From the diamagnetic response, we extract the magnetic penetration depth, $λ$, which exhibits a quadratic temperature dependence at low temperatures. Although a quadratic dependence in high-purity bulk samples has been attributed to non-local electrodynamics, our analysis suggests that in our thin-film samples the presence of scattering is the origin of the quadratic dependence. While we observe micron-scale variations in the diamagnetic response and superconducting transition temperature, the form of the temperature dependence of $λ$ is independent of position. Finally, we characterize flux trap** in superconducting rings lithographically fabricated from the thin films, paving the way to systematic device-based tests of the superconducting order parameter in Sr$\mathrm{_2}$RuO$\mathrm{_4}$. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Controllable suppression of the unconventional superconductivity in bulk and thin-film Sr$_{2}$RuO$_{4}$ via high-energy electron irradiation

Authors: Jacob P. Ruf, Hilary M. L. Noad, Romain Grasset, Ludi Miao, Elina Zhakina, Philippa H. McGuinness, Hari P. Nair, Nathaniel J. Schreiber, Naoki Kikugawa, Dmitry Sokolov, Marcin Konczykowski, Darrell G. Schlom, Kyle M. Shen, Andrew P. Mackenzie

Abstract: In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film Sr$_{2}$RuO$_{4}$, the relationship between $T_{\text{c}}$ and the residual resistivity $ρ_0$, which in bulk samples… ▽ More In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film Sr$_{2}$RuO$_{4}$, the relationship between $T_{\text{c}}$ and the residual resistivity $ρ_0$, which in bulk samples is taken to be a proxy for the low-temperature elastic scattering rate, is far less clear. Using high-energy electron irradiation to controllably introduce point disorder into bulk single-crystal and thin-film Sr$_{2}$RuO$_{4}$, we show that $T_{\text{c}}$ is suppressed in both systems at nearly identical rates. This suggests that part of $ρ_0$ in films comes from defects that do not contribute to superconducting pairbreaking, and establishes a quantitative link between the superconductivity of bulk and thin-film samples. △ Less

Submitted 29 February, 2024; originally announced February 2024.

Energy Relaxation and dynamics in the correlated metal Sr$_2$RuO$_4$ via THz two-dimensional coherent spectroscopy

Authors: David Barbalas, Ralph Romero III, Dipanjan Chaudhuri, Fahad Mahmood, Hari P. Nair, Nathaniel J. Schreiber, Darrel G. Schlom, K. M. Shen, N. P. Armitage

Abstract: Separating out the contributions of different scattering channels in strongly interacting metals is crucial in identifying the mechanisms that govern their properties. While momentum or current relaxation rates can be readily probed via \textit{dc} resistivity or optical/THz spectroscopy, distinguishing different kinds of inelastic scattering can be more challenging. Using nonlinear THz 2D coheren… ▽ More Separating out the contributions of different scattering channels in strongly interacting metals is crucial in identifying the mechanisms that govern their properties. While momentum or current relaxation rates can be readily probed via \textit{dc} resistivity or optical/THz spectroscopy, distinguishing different kinds of inelastic scattering can be more challenging. Using nonlinear THz 2D coherent spectroscopy, we measure the rates of energy relaxation after THz excitation in the strongly interacting Fermi liquid, Sr$_2$RuO$_4$. Energy relaxation is a bound on the total scattering and specifically a measure of contributions to the electron self-energy that arise from {\it inelastic} coupling to a bath. We observe two distinct energy relaxation channels: a fast process that we interpret as energy loss to the phonon system and a much slower relaxation that we interpret as arising from a non-equilibrium phonon effects and subsequent heat loss through diffusion. Interestingly, even the faster energy relaxation rate is at least an order of magnitude slower than the overall momentum relaxation rate, consistent with strong electron interactions and the dominance of energy-conserving umklapp or interband electron-electron scattering in momentum relaxation. The slowest energy relaxation rate decays on a sub-GHz scale, consistent with the relaxation dynamics of non-equilibrium phonons. Our observations reveal the versatility of nonlinear THz spectroscopy to measure the energy relaxation dynamics in correlated metals. Our work also highlights the need for improved theoretical understanding of such processes in interacting metals. △ Less

Submitted 20 December, 2023; originally announced December 2023.

Comments: 6 pages, 3 figures. SM included

Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure

Authors: J. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, Michael O. Thompson, H. G. Xing, D. Jena, H. P. Nair

Abstract: Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affec… ▽ More Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time

Authors: K. R. Gann, N. Pieczulewski1, C. A. Gorsak, K. Heinselman, T. J. Asel, B. A. Noesges, K. T. Smith, D. M. Dryden, H. G. Xing, H. P. Nair, D. A. Muller, M. O. Thompson

Abstract: Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area do**. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) wi… ▽ More Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area do**. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) with contact resistances below 0.29 $Ω$-mm. Homoepitaxial $β$-Ga$_2$O$_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10$^{18}$, 5x10$^{19}$, and 1x10$^{20}$ cm$^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $β$-Ga$_2$O$_3$ stability, $p_{O2}$ must be greater than 10$^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10$^{18}$ cm$^{-3}$, while 5x10$^{19}$ cm$^{-3}$ must be annealed with $p_{O2}$ <10$^{-4}$ bar and 1x10$^{20}$ cm$^{-3}$ requires $p_{O2}$ <10$^{-6}$ bar. Water vapor prevents activation and must be maintained below 10$^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10$^{19}$ cm$^{-3}$ and occurs rapidly at 1x10$^{20}$ cm$^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $β$-Ga$_2$O$_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $β$-phase with inclusions that resemble the $γ$-phase. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Electronic nematic order in the normal state of strontium ruthenate

Authors: Ryan Russell, Hari P. Nair, Kyle M. Shen, Darrell G. Schlom, John W. Harter

Abstract: Despite significant achievements in characterizing the properties of Sr$_2$RuO$_4$ over the last three decades, the precise nature of its electronic ground state is still unresolved. In this work, we provide a missing piece of the puzzle by uncovering evidence of electronic nematic order in the normal state of Sr$_2$RuO$_4$, revealed by ultrafast time-resolved optical dichroism measurements of uni… ▽ More Despite significant achievements in characterizing the properties of Sr$_2$RuO$_4$ over the last three decades, the precise nature of its electronic ground state is still unresolved. In this work, we provide a missing piece of the puzzle by uncovering evidence of electronic nematic order in the normal state of Sr$_2$RuO$_4$, revealed by ultrafast time-resolved optical dichroism measurements of uniaxially strained thin films. This nematic order, whose domains are aligned by the strain, spontaneously breaks the four-fold rotational symmetry of the crystal. The temperature dependence of the dichroism resembles an Ising-like order parameter, and optical pum** induces a coherent oscillation of its amplitude mode. A microscopic model of intra-unit-cell nematic order is presented, highlighting the importance of Coulomb repulsion between neighboring oxygen $p$-orbitals. The existence of electronic nematic order in the normal state of Sr$_2$RuO$_4$ may have consequences for the form and mechanism of superconductivity in this material. △ Less

Submitted 5 April, 2023; originally announced April 2023.

Journal ref: Physical Review B 108, L081105 (2023)

Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator

Authors: Anita Verma, Denis Golež, Oleg Yu. Gorobtsov, Kelson Kaj, Ryan Russell, Jeffrey Z. Kaaret, Erik Lamb, Guru Khalsa, Hari P Nair, Yifei Sun, Ryan Bouck, Nathaniel Schreiber, Jacob P. Ruf, Varun Ramaprasad, Yuya Kubota, Tadashi Togashi, Vladimir A. Stoica, Hari Padmanabhan, John W. Freeland, Nicole A. Benedek, Oleg Shpyrko, John W. Harter, Richard D. Averitt, Darrell G. Schlom, Kyle M. Shen , et al. (2 additional authors not shown)

Abstract: Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is ac… ▽ More Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical time scales dominated by slow coarsening dynamics. Here, we use time-resolved X-ray diffraction and reflectivity measurements to investigate the photoinduced insulator-to-metal transition in an epitaxially strained thin film Mott insulator Ca2RuO4. The dynamical transition occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, followed by a slower electronic evolution into a metastable non-equilibrium state. Microscopic calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics within a recently published equilibrium energy landscape picture explain the threshold-behavior and elucidate the delayed onset of the electronic phase transition in terms of kinematic constraints on recombination. Analysis of satellite scattering peaks indicates the persistence of a strain-induced nano-texture in the photoexcited film. This work highlights the importance of combined electronic and structural studies to unravel the physics of dynamic transitions and elucidates the role of strain in tuning the timescales of photoinduced processes. △ Less

Submitted 6 April, 2023; v1 submitted 4 April, 2023; originally announced April 2023.

Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

Authors: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Abstract: We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti… ▽ More We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Comments: 19 pages, 7 figures, 2 tables, 2 pages supplementary materials

Atomic-scale map** and quantification of local Ruddlesden-Popper phase variations

Authors: Erin E. Fleck, Berit H. Goodge, Matthew R. Barone, Hari P. Nair, Nathaniel J. Schreiber, Natalie M. Dawley, Darrell G. Schlom, Lena F. Kourkoutis

Abstract: The Ruddlesden-Popper ($A_{n+1}B_{n}\text{O}_{3n+1}$) compounds are a highly tunable class of materials whose functional properties can be dramatically impacted by their structural phase $n$. The negligible energetic differences associated with forming a sample with a single value of $n$ versus a mixture of $n$ makes the growth of these materials difficult to control and can lead to local atomic-s… ▽ More The Ruddlesden-Popper ($A_{n+1}B_{n}\text{O}_{3n+1}$) compounds are a highly tunable class of materials whose functional properties can be dramatically impacted by their structural phase $n$. The negligible energetic differences associated with forming a sample with a single value of $n$ versus a mixture of $n$ makes the growth of these materials difficult to control and can lead to local atomic-scale structural variation arising from small stoichiometric deviations. In this work, we present a Python analysis platform to detect, measure, and quantify the presence of different $n$-phases based on atomic-resolution scanning transmission electron microscopy (STEM) images in a statistically rigorous manner. We employ phase analysis on the 002 Bragg peak to identify horizontal Ruddlesden-Popper faults which appear as regions of high positive compressive strain within the lattice image, allowing us to quantify the local structure. Our semi-automated technique offers statistical advantages by considering effects of finite projection thickness, limited fields of view, and precise sampling rates. This method retains the real-space distribution of layer variations allowing for a spatial map** of local $n$-phases, enabling both quantification of intergrowth occurrence as well as qualitative description of their distribution, opening the door to new insights and levels of control over a range of layered materials. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 8 pages, 5 figures

Tilted spin current generated by the collinear antiferromagnet RuO2

Authors: Arnab Bose, Nathaniel J. Schreiber, Rakshit Jain, Ding-Fu Shao, Hari P. Nair, Jiaxin Sun, Xiyue S. Zhang, David A. Muller, Evgeny Y. Tsymbal, Darrell G. Schlom, Daniel C. Ralph

Abstract: We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transvers… ▽ More We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transverse spin current even in the absence of spin-orbit coupling. This produces characteristic changes in all three components of the E induced torque vector as a function of the angle of E relative to the crystal axes, corresponding to a spin current with a well defined tilted spin orientation s approximately (but not exactly) parallel to the Neel vector, flowing perpendicular to both E and S. This angular dependence is the signature of an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic or ferromagnetic materials. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Journal ref: Nature Electronics 5, 267 (2022)

Quantum Oscillations and the Quasiparticle Properties of Thin Film Sr$_2$RuO$_4$

Authors: Yawen Fang, Hari P. Nair, Ludi Miao, Berit Goodge, Nathaniel J. Schreiber, Jacob P. Ruf, Lena F. Kourkoutis, Kyle M. Shen, Darrell G. Schlom, B. J. Ramshaw

Abstract: We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the… ▽ More We measure the Shubnikov-de Haas effect in thin-film Sr$_2$RuO$_4$ grown on an (LaAlO$_3$)$_{0.29}$-(SrAl$_{1/2}$Ta$_{1/2}$O$_3$)$_{0.71}$ (LSAT) substrate. We detect all three known Fermi surfaces and extract the Fermi surface volumes, cyclotron effective masses, and quantum lifetimes. We show that the electronic structure is nearly identical to that of single-crystal Sr$_2$RuO$_4$, and that the quasiparticle lifetime is consistent with the Tc of comparably clean, single-crystal Sr$_2$RuO$_4$. Unlike single-crystal Sr$_2$RuO$_4$, where the quantum and transport lifetimes are roughly equal, we find that the transport lifetime is $1.3\pm0.1$ times longer than the quantum lifetime. This suggests that extended (rather than point) defects may be the dominant source of quasiparticle scattering in these films. To test this idea, we perform cross-sectional STEM and find that out-of-phase boundaries extending the entire thickness of the film occur with a density that is consistent with the quantum mean free path. The long quasiparticle lifetimes make these films ideal for studying the unconventional superconducting state in Sr$_2$RuO$_4$ through the fabrication of devices -- such as planar tunnel junctions and SQUIDs. △ Less

Submitted 2 August, 2021; v1 submitted 28 February, 2021; originally announced March 2021.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. B 104, 045152 (2021)

Separated transport relaxation scales and interband scattering in SrRuO$_3$, CaRuO$_3$, and Sr$_2$RuO$_4$ thin films

Authors: Youcheng Wang, H. P. Nair, N. J. Schreiber, J. P. Ruf, Bing Cheng, D. G. Schlom, K. M. Shen, N. P. Armitage

Abstract: The anomalous charge transport observed in some strongly correlated metals raises questions as to the universal applicability of Landau Fermi liquid theory. The coherence temperature $T_{FL}$ for normal metals is usually taken to be the temperature below which $T^2$ is observed in the resistivity. Below this temperature, a Fermi liquid with well-defined quasiparticles is expected. However, metalli… ▽ More The anomalous charge transport observed in some strongly correlated metals raises questions as to the universal applicability of Landau Fermi liquid theory. The coherence temperature $T_{FL}$ for normal metals is usually taken to be the temperature below which $T^2$ is observed in the resistivity. Below this temperature, a Fermi liquid with well-defined quasiparticles is expected. However, metallic ruthenates in the Ruddlesden-Popper family, frequently show non-Drude low-energy optical conductivity and unusual $ω/T$ scaling, despite the frequent observation of $T^2$ dc resistivity. Herein we report time-domain THz spectroscopy measurements of several different high-quality metallic ruthenate thin films and show that the optical conductivity can be interpreted in more conventional terms. In all materials, the conductivity has a two-Drude peak lineshape at low temperature and a crossover to a one-Drude peak lineshape at higher temperatures. The two-component low-temperature conductivity is indicative of two well-separated current relaxation rates for different conduction channels. We discuss three particular possibilities for the separation of rates: (a) Strongly energy-dependent inelastic scattering; (b) an almost-conserved pseudomomentum operator that overlaps with the current, giving rise to the narrower Drude peak; (c) the presence of multiple conduction channels that undergoes a crossover to stronger interband scattering at higher temperatures. None of these scenarios require the existence of exotic quasiparticles. The results may give insight into the possible significance of Hund's coupling in determining interband coupling in these materials. Our results also show a route towards understanding the violation of Matthiessen's rule in this class of materials and deviations from the "Gurzhi" scaling relations in Fermi liquids. △ Less

Submitted 23 December, 2020; originally announced December 2020.

Comments: 8 figures. No Supplemental Materials

Journal ref: Phys. Rev. B 103, 205109 (2021)

Inhomogeneous ferromagnetism mimics signatures of the topological Hall effect in SrRuO$_3$ films

Authors: Gideok Kim, K. Son, Y. E. Suyolcu, L. Miao, N. J. Schreiber, H. P. Nair, D. Putzky, M. Minola, G. Christiani, P. A. van Aken, K. M. Shen, D. G. Schlom, G. Logvenov, B. Keimer

Abstract: Topological transport phenomena in magnetic materials are a major topic of current condensed matter research. One of the most widely studied phenomena is the ``topological Hall effect'' (THE), which is generated via spin-orbit interactions between conduction electrons and topological spin textures such as skyrmions. We report a comprehensive set of Hall effect and magnetization measurements on epi… ▽ More Topological transport phenomena in magnetic materials are a major topic of current condensed matter research. One of the most widely studied phenomena is the ``topological Hall effect'' (THE), which is generated via spin-orbit interactions between conduction electrons and topological spin textures such as skyrmions. We report a comprehensive set of Hall effect and magnetization measurements on epitaxial films of the prototypical ferromagnetic metal SrRuO$_3$ the magnetic and transport properties of which were systematically modulated by varying the concentration of Ru vacancies. We observe Hall effect anomalies that closely resemble signatures of the THE, but a quantitative analysis demonstrates that they result from inhomogeneities in the ferromagnetic magnetization caused by a non-random distribution of Ru vacancies. As such inhomogeneities are difficult to avoid and are rarely characterized independently, our results call into question the identification of topological spin textures in numerous prior transport studies of quantum materials, heterostructures, and devices. Firm conclusions regarding the presence of such textures must meet stringent conditions such as probes that couple directly to the non-collinear magnetization on the atomic scale. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Journal ref: Physical Review Materials 4, 104410 (2020)

Strain-stabilized superconductivity

Authors: Jacob P. Ruf, Hanjong Paik, Nathaniel J. Schreiber, Hari P. Nair, Ludi Miao, Jason K. Kawasaki, Jocienne N. Nelson, Brendan D. Faeth, Yonghun Lee, Berit H. Goodge, Betül Pamuk, Craig J. Fennie, Lena F. Kourkoutis, Darrell G. Schlom, Kyle M. Shen

Abstract: Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendip… ▽ More Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the first instance of the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO$_{2}$ thin films on (110)-oriented TiO$_{2}$ substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of $d$ orbitals. △ Less

Submitted 13 May, 2020; originally announced May 2020.

Comments: 30 pages, 20 figures (including supplemental information)

Journal ref: Nature Communications 12, 59 (2021)

Sub-THz momentum drag and violation of Matthiessen's rule in an ultraclean ferromagnetic SrRuO$_3$ metallic thin film

Authors: Youcheng Wang, G. Bosse, H. P. Nair, N. J. Schreiber, J. P. Ruf, B. Cheng, C. Adamo, D. E. Shai, Y. Lubashevsky, D. G. Schlom, K. M. Shen, N. P. Armitage

Abstract: SrRuO$_3$, a ferromagnet with an approximately 160\,K Curie temperature, exhibits a $T^2$ dependent dc resistivity below $\approx$ 30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures which seem to contradict a Fermi-liquid picture with long-lived quasiparticles. In this work, we measure the low-frequency THz range response of… ▽ More SrRuO$_3$, a ferromagnet with an approximately 160\,K Curie temperature, exhibits a $T^2$ dependent dc resistivity below $\approx$ 30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures which seem to contradict a Fermi-liquid picture with long-lived quasiparticles. In this work, we measure the low-frequency THz range response of thin films with residual resistivity ratios, $ρ_{300K}/ ρ_{4K} \approx$ 74. Such low disorder samples allow an unprecedented look at the effects of electron-electron interactions on low-frequency transport. At temperatures below 30 K, we found both a very sharp zero-frequency mode which has a width narrower than $k_BT/\hbar$ as well as a broader zero frequency Lorentzian that has at least an order of magnitude larger scattering rate. Both features have temperature dependencies consistent with a Fermi-liquid with the wider feature explicitly showing a T$^2$ scaling. Such two -Drude transport sheds light on previous reports of the violation of Mathielssen's rule and extreme sensitivity to disorder in metallic ruthenates. We consider a number of possibilities for the origin of the two feature optical conductivity including multiband effects that arise from momentum conserving interband scattering and the approximate conservation of a pseudo-momentum that arises from quasi-1D Fermi surfaces. △ Less

Submitted 26 March, 2020; originally announced March 2020.

Comments: main text 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 125, 217401 (2020)

Electronic and vibrational signatures of ruthenium vacancies in Sr$_2$RuO$_4$ thin films

Authors: Gideok Kim, Y. Eren Suyolcu, J. Herrero-Martin, D. Putzky, H. P. Nair, J. P. Ruf, N. J. Schreiber, C. Dietl, G. Christiani, G. Logvenov, M. Minola, P. A. van Aken, K. M. Shen, D. G. Schlom, B. Keimer

Abstract: The synthesis of stoichiometric Sr$_2$RuO$_4$ thin films has been a challenge because of the high volatility of ruthenium oxide precursors, which gives rise to ruthenium vacancies in the films. Ru vacancies greatly affect the transport properties and electronic phase behavior of Sr$_2$RuO$_4$, but their direct detection is difficult due to their atomic dimensions and low concentration. We applied… ▽ More The synthesis of stoichiometric Sr$_2$RuO$_4$ thin films has been a challenge because of the high volatility of ruthenium oxide precursors, which gives rise to ruthenium vacancies in the films. Ru vacancies greatly affect the transport properties and electronic phase behavior of Sr$_2$RuO$_4$, but their direct detection is difficult due to their atomic dimensions and low concentration. We applied polarized X-ray absorption spectroscopy at the oxygen K-edge and confocal Raman spectroscopy to Sr$_2$RuO$_4$ thin films synthesized under different conditions. The results show that these methods can serve as sensitive probes of the electronic and vibrational properties of Ru vacancies, respectively. The intensities of the vacancy-related spectroscopic features extracted from these measurements are well correlated with the transport properties of the films. The methodology introduced here can thus help to understand and control the stoichiometry and transport properties in films of Sr$_2$RuO$_4$ and other ruthenates. △ Less

Submitted 30 September, 2019; originally announced September 2019.

Journal ref: Physical Review Materials 3, 094802 (2019)

Revealing the Hidden Heavy Fermi Liquid in CaRuO3

Authors: Yang Liu, Hari P. Nair, Jacob P. Ruf, Darrell G. Schlom, Kyle M. Shen

Abstract: The perovskite ruthenate has attracted considerable interest due to reports of possible non-Fermi-liquid behavior and its proximity to a magnetic quantum critical point, yet its ground state and electronic structure remain enigmatic. Here we report the first measurements of the Fermi surface and quasiparticle dispersion in CaRuO3 through a combination of oxide molecular beam epitaxy and in situ an… ▽ More The perovskite ruthenate has attracted considerable interest due to reports of possible non-Fermi-liquid behavior and its proximity to a magnetic quantum critical point, yet its ground state and electronic structure remain enigmatic. Here we report the first measurements of the Fermi surface and quasiparticle dispersion in CaRuO3 through a combination of oxide molecular beam epitaxy and in situ angle-resolved photoemission spectroscopy. Our results reveal a complex and anisotropic Fermi surface consisting of small electron pockets and straight segments, consistent with the bulk orthorhombic crystal structure with large octahedral rotations. We observe a strongly band-dependent mass renormalization, with prominent heavy quasiparticle bands which lie close to the Fermi energy and exhibit strong temperature dependence. These results are consistent with a heavy Fermi liquid with a complex Fermiology and small hybridization gaps near the Fermi energy. Our results provide a unified framework for explaining previous experimental results on CaRuO3, such as its unusual optical conductivity, and demonstrate the importance of octahedral rotations in determining the quasiparticle band structure, and electron correlations in complex transition metal oxides. △ Less

Submitted 8 February, 2019; originally announced February 2019.

Comments: 4 figures

Journal ref: Physical Review B 98, 041110(R) (2018)

Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3

Authors: Yongxi Ou, Zhe Wang, Celesta S. Chang, Hari P. Nair, Hanjong Paik, Neal Reynolds, D. C. Ralph, D. A. Muller, D. G. Schlom, R. A. Buhrman

Abstract: Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite S… ▽ More Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T) dependent spin Hall conductivity which becomes particularly high at low T, e.g. σ_{SH} \geqslant (\hbar/2e)3x10^{5} Ω^{-1}m^{-1} at 60 K. Below the SrRuO3 ferromagnetic transition, non-standard SOT components develop associated with the magnetic characteristics of the oxide, but these do not dominate as with spin currents from a conventional ferromagnet. Our results establish a new approach for the study of SOI in epitaxial conducting oxide heterostructures and confirm SrRuO3 as a promising candidate material for achieving new and enhanced spintronics functionalities. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 3 Figures

Journal ref: Nano Lett. 2019, 19, 6, 3663-3670

Electronic and optical properties of GaSb:N from first principles

Authors: Priyamvada Jadaun, Hari P. Nair, Vincenzo Lordi, Seth R. Bank, Sanjay K. Banerjee

Abstract: GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-n… ▽ More GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a first principles, density functional theory study using the hybrid HSE06 exchange-correlation functional of GaSb doped with 1.6$\%$ nitrogen. To study dilute-nitrides with small band gaps, the local density approximation (LDA) is insufficient and more accurate techniques such as HSE06 are needed. We conduct a comparative study on GaAs:N, also with 1.6$\%$ nitrogen mole fraction, and find that GaSb:N has a smaller band gap and displays more band gap bowing than GaAs:N. In addition we examine the orbital character of the bands, finding the lowest conduction band to be quasi-delocalized, with a large N-$3s$ contribution. At high concentrations, the N atoms interact via the host matrix, forming a dispersive band of their own which governs optoelectronic properties and dominates band gap bowing. While this band drives the optical and electronic properties of GaSb:N, its physics is not captured by traditional models for dilute-nitrides. We thus propose that a complete theory of dilute-nitrides should incorporate orbital character examination, especially at high N concentrations. △ Less

Submitted 5 March, 2014; v1 submitted 1 August, 2013; originally announced August 2013.