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Enhanced Electron Extraction in Co-Doped TiO2 Quantified by Drift-Diffusion Simulation for Stable CsPbI3 Solar Cells
Authors:
Thomas W. Gries,
Davide Regaldo,
Hans Koebler,
Titan Noor Hartono Putri,
Gennaro V. Sannino,
Emilio Gutierrez Partida,
Roberto Felix,
Elif Huesam,
Ahmed Saleh,
Regan G. Wilks,
Zafar Iqbal,
Zahra Loghman Nia,
Florian Ruske,
Martin Stolterfoht,
Dieter Neher,
Marcus Baer,
Stefan A. Weber,
Paola Delli Veneri,
Philip Schulz,
Jean-Baptiste Puel,
Jean-Paul Kleider,
Qiong Wang,
Eva Unger,
Artem Musiienko,
Antonio Abate
Abstract:
Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic prop…
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Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic properties of (doped) TiO2 as an electron-selective contact. We show via KPFM that co-do** of TiO2 with Nb(V) and Sn(IV) reduces the materials work function by 270 meV, giving it stronger n-type characteristics compared to Nb(V) mono-doped TiO2. The altered electronic alignment with CsPbI3 translates to enhanced electron extraction, as demonstrated with ssPL, trPL and trSPV in triad. Importantly, we extract crucial parameters, such as the concentration of extracted electrons and the interface hole recombination velocity, from the SPV transients via 2D drift-diffusion simulations. When implementing the co-doped TiO2 into full n-i-p solar cells, the operational stability is enhanced to 32000 h of projected TS80 lifetime. This study provides fundamental understanding of interfacial charge extraction and its correlation with operational stability of perovskite solar cells, which can be transferred to other charge-selective contacts.
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Submitted 24 April, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Photovoltaic potential of tin perovskites revealed through layer-by-layer investigation of optoelectronic and charge transport properties
Authors:
Mahmoud H. Aldamasy,
Artem Musiienko,
Marin Rusu,
Davide Regaldo,
Shengnan Zho,
Hannes Hampel,
Chiara Frasca,
Zafar Iqbal,
Thomas W. Gries,
Guixiang Li,
Ece Aktas,
Giuseppe Nasti,
Meng Li,
Jorge Pascual,
Noor Titan Putri Hartono,
Qiong Wang,
Thomas Unold,
Antonio Abate
Abstract:
Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells is incomparable to lead perovskites for several reasons, including energy band mismatch between the perovskite absorber film and the charge transporting layers…
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Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells is incomparable to lead perovskites for several reasons, including energy band mismatch between the perovskite absorber film and the charge transporting layers (CTLs) for both types of carriers, i.e., for electrons (ETLs) and holes (HTLs). However, the band diagrams in the literature are inconsistent, and the charge extraction dynamics are poorly understood. In this paper, we study the energy band positions of FASnI3 based perovskites using Kelvin probe (KP) and photoelectron yield spectroscopy (PYS) to provide a precise band diagram of the most used device stack. In addition, we analyze the defects within the current energetic landscape of tin perovskites. We uncover the role of bathocuproine (BCP) in enhancing the electron extraction at the fullerene C60/BCP interface. Furthermore, we used transient surface photovoltage (tr-SPV) for the first time for tin perovskites to understand the charge extraction dynamics of the most reported HTLs such as NiOx and PEDOT, and ETLs such as C60, ICBA, and PCBM. Finally, we used Hall effect, KP, and time-resolved photoluminescence (TRPL) to estimate an accurate value of the p-do** concentration in FASnI3 and showed a consistent result of 1.5 * 1017 cm-3. Our findings prove that the energetic system of tin halide perovskites is deformed and should be redesigned independently from lead perovskites to unlock the full potential of tin perovskites.
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Submitted 7 October, 2023; v1 submitted 11 September, 2023;
originally announced September 2023.
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Interface Modification for Energy Levels Alignment and Charge Extraction in CsPbI$_3$ Perovskite Solar Cells
Authors:
Zafar Iqbal,
Fengshuo Zu,
Artem Musiienko,
Emilio Gutierrez Partida,
Hans Kobler,
Thomas W. Gries,
Gennaro V. Sannino,
Laura Canil,
Norbert Koch,
Martin Stolterfoht,
Dieter Neher,
Michele Pavone,
Ana Belen Munoz-Garcia,
Antonio Abate,
Qiong Wang
Abstract:
In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a pas…
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In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a passivated perovskite film, by n-Octyl ammonium Iodide (OAI), we created an upward surface band-bending at the interface by TOPO treatment. This improved interface by the dipole molecule induces a better energy level alignment and enhances the charge extraction of holes from the perovskite layer to the hole transport material. Consequently, a Voc of 1.2 V and high-power conversion efficiency (PCE) of over 19% were achieved for inorganic CsPbI$_3$ perovskite solar cells. Further, to demonstrate the effect of the TOPO dipole molecule, we present a layer-by-layer charge extraction study by transient surface photovoltage technique (trSPV) accomplished by charge transport simulation.
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Submitted 24 July, 2023;
originally announced July 2023.
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Whats special about Y6; the working mechanism of neat Y6 organic solar cell
Authors:
Elifnaz Saglamkaya,
Artem Musiienko,
Mohammad Saeed Shadabroo,
Bowen Sun,
Sreelakshmi Chandrabose,
Giulia Lo Gerfo M,
Niek F van Hulst,
Dieter Neher,
Safa Shoaee
Abstract:
Non-fullerene acceptors (NFA) have delivered advance in bulk heterojunction organic solar cell efficiencies, with the significant milestone of 20% now in sight. However, these materials challenge the accepted wisdom of how organic solar cells work. In this work we present neat Y6 device with efficiency above 4.5%. We thoroughly investigate mechanisms of charge generation and recombination as well…
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Non-fullerene acceptors (NFA) have delivered advance in bulk heterojunction organic solar cell efficiencies, with the significant milestone of 20% now in sight. However, these materials challenge the accepted wisdom of how organic solar cells work. In this work we present neat Y6 device with efficiency above 4.5%. We thoroughly investigate mechanisms of charge generation and recombination as well as transport in order to understand what is special about Y6. Our data suggest Y6 generates bulk free charges, with ambipolar mobility, which can be extracted in the presence of transport layers
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Submitted 21 April, 2023;
originally announced April 2023.
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Anticorrelated Photoluminescence and Free Charge Generation Proves Field-Assisted Exciton Dissociation in Low-Offset PM6:Y5 Organic Solar Cells
Authors:
Manasi Pranav,
Thomas Hultzsch,
Artem Musiienko,
Bowen Sun,
Atul Shukla,
Frank Jaiser,
Safa Shoaee,
Dieter Neher
Abstract:
Understanding the origin of inefficient photocurrent generation in organic solar cells with low energy offset remains key to realizing high performance donor-acceptor systems. Here, we probe the origin of field-dependent free charge generation and photoluminescence in non-fullerene acceptor (NFA) based organic solar cells using the polymer PM6 and NFA Y5 - a non-halogenated sibling to Y6, with a s…
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Understanding the origin of inefficient photocurrent generation in organic solar cells with low energy offset remains key to realizing high performance donor-acceptor systems. Here, we probe the origin of field-dependent free charge generation and photoluminescence in non-fullerene acceptor (NFA) based organic solar cells using the polymer PM6 and NFA Y5 - a non-halogenated sibling to Y6, with a smaller energetic offset to PM6. By performing time-delayed collection field (TDCF) measurements on a variety of samples with different electron transport layers and active layer thickness, we show that the fill factor and photocurrent are limited by field-dependent free charge generation in the bulk of the blend. We also introduce a new method of TDCF called m-TDCF to prove the absence of artefacts from non-geminate recombination of photogenerated- and dark charge carriers near the electrodes. We then correlate free charge generation with steady state photoluminescence intensity, and find perfect anticorrelation between these two properties. Through this, we conclude that photocurrent generation in this low offset system is entirely controlled by the field dependent exciton dissociation into charge transfer states.
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Submitted 11 April, 2023;
originally announced April 2023.
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Revealing the do** density in perovskite solar cells and its impact on device performance
Authors:
Francisco Peña-Camargo,
Jarla Thiesbrummel,
Hannes Hempel,
Artem Musiienko,
Vincent M. Le Corre,
Jonas Diekmann,
Jonathan Warby,
Thomas Unold,
Felix Lang,
Dieter Neher,
Martin Stolterfoht
Abstract:
Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic do** density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic do** density for a range of different lead-halide perovskite systems. Optical…
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Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic do** density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic do** density for a range of different lead-halide perovskite systems. Optical and electrical characterisation techniques comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the do** density. The obtained values are subsequently compared to the charge on the electrodes per unit volume at short-circuit conditions, which amounts to roughly $10^{16}$ cm$^{-3}$. This figure equals the product of the capacitance $C$ and the built-in potential $V_\mathrm{bi}$ and represents the critical limit below which do**-induced charges do not influence the device performance. The experimental results demonstrate consistently that the do** density is below this critical threshold ($<10^{12}$ cm$^{-3}$ which means $<CV_\mathrm{bi}$ per unit volume) for all common lead-based metal-halide perovskites. Nevertheless, although the density of do**-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations which confirm that the device performance is not affected by such low do** densities.
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Submitted 14 January, 2022;
originally announced January 2022.
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Space charge formation in chromium compensated GaAs radiation detectors
Authors:
E. Belas,
R. Grill,
J. Pipek,
P. Praus,
J. Bok,
A. Musiienko,
P. Moravec,
O. Tolbanov,
A. Tyazhev,
A. Zarubin
Abstract:
Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determ…
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Space charge formation in chromium-compensated GaAs sensors is investigated by the laser-induced transient current technique applying pulsed and DC bias. Formation of non-standard space charge manifested by an appearance of both negatively and positively charged regions in DC biased sensors was revealed during 5 ms after switching bias. Using Monte Carlo simulations of current transients we determined enhanced electron lifetime τ = 150 ns and electron drift mobility μd = 3650 cm2/Vs. We developed and successfully applied theoretical model based on fast hole trap** in the system with spatially variable hole conductivity.
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Submitted 3 April, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
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Deciphering the Effect of Traps on Electronic Charge Transport Properties of Methylammonium Lead Tribromide
Authors:
Artem Musiienko,
**drich Pipek,
Petr Praus,
Mykola Brynza,
Eduard Belas,
Bogdan Dryzhakov,
Mao-Hua Du,
Mahshid Ahmadi,
Roman Grill
Abstract:
Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP devices. Yet, the parameters of defects and their interplay with free charge carriers remain unclear. In this study we explore the dynamics of free holes in meth…
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Organometallic halide perovskites (OMHPs) have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of OMHP devices. Yet, the parameters of defects and their interplay with free charge carriers remain unclear. In this study we explore the dynamics of free holes in methylammonium lead tribromide (MAPbBr3) single crystals using the time of flight (ToF) current spectroscopy. By combining the current waveform (CWF) ToF spectroscopy and the Monte Carlo (MC) simulation, three energy states were detected in the band gap of MAPbBr3. Additionally, we found the trap** and detrap** rates of free holes ranging from a few us to hundreds of us and, contrary to previous studies, a strong detrap** activity was revealed. It was shown that these traps have a significant impact on the transport properties of MAPbBr3 single crystal devices, including drift mobility and mobility-lifetime product. To demonstrate the impact of traps on the delay of free carriers, we developed a new model of the effective mobility valid for the case of multiple traps in a semiconductor. Our results provide a new insight on charge transport properties of OMHP semiconductors, which is required for further development of this class of optoelectronic devices.
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Submitted 10 December, 2019; v1 submitted 23 September, 2019;
originally announced September 2019.
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Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites
Authors:
Artem Musiienko,
Pavel Moravec,
Roman Grill,
Petr Praus,
Igor Vasylchenko,
Jakub Pekarek,
Jeremy Tisdale,
Katarina Ridzonova,
Eduard Belas,
Lucie Abelova,
Bin Hu,
Eric Lukosi,
Mahshid Ahmadi
Abstract:
Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices. Currently, such understanding is limited, restricting the power conversion efficiencies of OMHPs solar cells from reaching their Shockley Queisser limit. Here, we report on deep level (DL) defects and their effect on free charge tra…
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Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices. Currently, such understanding is limited, restricting the power conversion efficiencies of OMHPs solar cells from reaching their Shockley Queisser limit. Here, we report on deep level (DL) defects and their effect on free charge transport properties of single crystalline methylammonium lead bromide perovskite (MAPB). In order to determine DL activation energy and capture cross section we used photo-Hall effect spectroscopy (PHES) with enhanced illumination in both steady-state and dynamic regimes. This method has shown to be convenient due to the direct DL visualization by sub-bandgap photo-excitation of trapped carriers. DLs with activation energies of 1.05 eV, 1.5 eV, and 1.9 eV above valence band were detected. The hole capture cross section was found using photoconductivity relaxation after sub-bandgap photo-excitation. We found the DL defects responsible for non-radiative recombination and its impact on band alignment for the first time. Additionally, the transport properties of MAPB single crystal is measured by Time of Flight (ToF) at several biases. The analysis of ToF measurement further confirms increase of Hall mobility and the enhancement of hole transport produced by sub-bandgap illumination in MAPB devices. Our studies provide a strong evidence on deep levels in OMHPs and opens a richer picture of the role and properties of deep levels in MAPB single crystals as a system model for the first time. The deeper knowledge of the electrical structure of OMHP could open further opportunities in the development of more feasible technology.
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Submitted 1 December, 2018;
originally announced December 2018.
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Photo-Hall effect spectroscopy with enhanced illumination in p-Cd1-xMnxTe showing negative differential photoconductivity
Authors:
A. Musiienko,
R. Grill,
P. Moravec,
P. Fochuk,
I. Vasylchenko,
H. Elhadidy,
L. Šedivý
Abstract:
We studied deep levels (DLs) in p-type CdMnTe by photo-Hall effect spectroscopy with enhanced illumination. We showed that the mobility of minority and majority carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies 0.63 eV, 0.9 eV, 1.0 eV and 1.3 eV were detected and their positions in the bandgap were verif…
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We studied deep levels (DLs) in p-type CdMnTe by photo-Hall effect spectroscopy with enhanced illumination. We showed that the mobility of minority and majority carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies 0.63 eV, 0.9 eV, 1.0 eV and 1.3 eV were detected and their positions in the bandgap were verified by comparison of photogenerated electron and hole concentrations. Deduced DL model was analyzed by numerical simulations with Shockley-Reed-Hall charge generation-recombination theory and compared with alternative DL models differing in the position of selected DLs relative to Ec and Ev. We showed that the consistent explanation of collected experimental data principally limits the applicability of alternative DLs models. We also demonstrated the importance of the extended operation photon fluxes used in the spectra acquisition for correct determination of DLs character. Negative differential photoconductivity was observed and studied by charge dynamic theoretical simulations.
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Submitted 22 December, 2017;
originally announced December 2017.
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Dual-wavelength Photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity
Authors:
A. Musiienko,
R. Grill,
P. Moravec,
G. Korcsmaros,
M. Rejhon,
J. Pekarek,
H. Elhadidy,
L. Sedivy,
I. Vasylchenko
Abstract:
Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobilit…
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Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev+1.0 eV enhancing thus potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.
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Submitted 5 October, 2017;
originally announced October 2017.
