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Non-equilibrium spin polarisation via interfacial exchange-field spin filtering
Authors:
Prasanta Muduli,
Naëmi Leo,
Mingran Xu,
Zheng Zhu,
Jorge Puebla,
Christian Ortiz,
Hironari Isshiki,
YoshiChika Otani
Abstract:
A key phenomenon that enables nanoscale spintronic devices is the efficient inter-conversion between spin and charge degrees of freedom. Here, we experimentally demonstrate a pathway to generate current-induced spin polarization at the interface between an insulating ferromagnet and a non-magnetic metal using interfacial exchange-field spin filtering. Measuring current-in-plane giant magnetoresist…
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A key phenomenon that enables nanoscale spintronic devices is the efficient inter-conversion between spin and charge degrees of freedom. Here, we experimentally demonstrate a pathway to generate current-induced spin polarization at the interface between an insulating ferromagnet and a non-magnetic metal using interfacial exchange-field spin filtering. Measuring current-in-plane giant magnetoresistance in Py$|$Cu$|$EuS trilayer Hall cross devices, we induce a non-equilibrium spin polarization of $P_\text{neq}^\text{Cu|EuS}$=0.6% at a low charge current density of 1.88$\times$10$^3$ A/cm$^2$. This efficiency is comparable to that of conventional charge-to-spin conversion of spin-Hall or Rashba-Edelstein effects enabled by relativistic spin-orbit coupling. Interfacial exchange field filtering allows operation with largely reduced power consumption and magnetic reconfigurability, opening new pathways to nanoscale low-power insulator spintronics.
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Submitted 26 August, 2023;
originally announced August 2023.
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Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructures
Authors:
Richa Mudgal,
Alka Jakhar,
Pankhuri Gupta,
Ram Singh Yadav,
B. Biswal,
P. Sahu,
Himanshu Bangar,
Akash Kumar,
Niru Chowdhury,
Biswarup Satpati,
B. R. K. Nanda,
S. Satpathy,
Samaresh Das,
P. K. Muduli
Abstract:
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for spintronics applications is yet to be explored. In this work, we demonstrate that PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructure can generate a large dam**-lik…
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As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for spintronics applications is yet to be explored. In this work, we demonstrate that PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructure can generate a large dam**-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe$_{2}$. The efficiency of charge-to-spin conversion is found to be $(-0.1 \pm 0.02)$~nm$^{-1}$ in PtSe$_{2}$/Ni$_{80}$Fe$_{20}$, which is three times that of the control sample, Ni$_{80}$Fe$_{20}$/Pt. Our band structure calculations show that the SOT due to the PtSe$_2$ arises from an unexpectedly large spin splitting in the interfacial region of PtSe$_2$ introduced by the proximity magnetic field of the Ni$_{80}$Fe$_{20}$ layer. Our results open up the possibilities of using large-area PtSe$_{2}$ for energy-efficient nanoscale devices by utilizing the proximity-induced SOT.
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Submitted 21 July, 2023;
originally announced July 2023.
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Interfacial origin of unconventional spin-orbit torque in Py/$γ-$IrMn$_{3}$
Authors:
Akash Kumar,
Pankhuri Gupta,
Niru Chowdhury,
Kacho Imtiyaz Ali Khan,
Utkarsh Shashank,
Surbhi Gupta,
Yasuhiro Fukuma,
Sujeet Chaudhary,
Pranaba Kishor Muduli
Abstract:
Angle-resolved spin-torque ferromagnetic resonance measurements are carried out in heterostructures consisting of Py (Ni$_{81}$Fe$_{19}$) and a noncollinear antiferromagnetic quantum material $γ-$IrMn$_{3}$. The structural characterization reveals that $γ-$IrMn$_{3}$ is polycrystalline in nature. A large exchange bias of 158~Oe is found in Py/$γ-$IrMn$_{3}$ at room temperature, while $γ-$IrMn…
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Angle-resolved spin-torque ferromagnetic resonance measurements are carried out in heterostructures consisting of Py (Ni$_{81}$Fe$_{19}$) and a noncollinear antiferromagnetic quantum material $γ-$IrMn$_{3}$. The structural characterization reveals that $γ-$IrMn$_{3}$ is polycrystalline in nature. A large exchange bias of 158~Oe is found in Py/$γ-$IrMn$_{3}$ at room temperature, while $γ-$IrMn$_{3}$/Py and Py/Cu/$γ-$IrMn$_{3}$ exhibited no exchange bias. Regardless of the exchange bias and stacking sequence, we observe a substantial unconventional out-of-plane anti-dam** torque when $γ-$IrMn$_{3}$ is in direct contact with Py. The magnitude of the out-of-plane spin-orbit torque efficiency is found to be twice as large as the in-plane spin-orbit torque efficiency. The unconventional spin-orbit torque vanishes when a Cu spacer is introduced between Py and $γ-$IrMn$_{3}$, indicating that the unconventional spin-orbit torque in this system originates at the interface. These findings are important for realizing efficient antiferromagnet-based spintronic devices via interfacial engineering.
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Submitted 8 May, 2023;
originally announced May 2023.
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Large spin Hall conductivity in epitaxial thin films of kagome antiferromagnet Mn$_3$Sn at room temperature
Authors:
Himanshu Bangar,
Kacho Imtiyaz Ali Khan,
Akash Kumar,
Niru Chowdhury,
Prasanta Kumar Muduli,
Pranaba Kishor Muduli
Abstract:
Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pum** induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, w…
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Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pum** induced inverse spin Hall effect measurements on $c$-plane epitaxial Mn$_3$Sn/Ni$_{80}$Fe$_{20}$, we measure spin-diffusion length ($λ_{\rm Mn_3Sn}$), and spin Hall conductivity ($σ_{\rm{SH}}$) of Mn$_3$Sn thin films: $λ_{\rm Mn_3Sn}=0.42\pm 0.04$ nm and $σ_{\rm{SH}}=-702~\hbar/ e~Ω^{-1}$cm$^{-1}$. While $λ_{\rm Mn_3Sn}$ is consistent with earlier studies, $σ_{\rm{SH}}$ is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in our films, leading to the observed behavior. Our findings demonstrate a technique for engineering $σ_{\rm{SH}}$ of Mn$_3$Sn films by employing Mn composition for functional spintronic devices.
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Submitted 6 September, 2022;
originally announced September 2022.
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Charge to Spin Conversion in van der Waals Metal NbSe2
Authors:
Anamul Md. Hoque,
Bing Zhao,
Dmitrii Khokhriakov,
Prasanta Muduli,
Saroj P. Dash1
Abstract:
Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin-orbit coupling and novel spin textures have attracted significant attention for an efficient charge to spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up…
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Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin-orbit coupling and novel spin textures have attracted significant attention for an efficient charge to spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and detected using non-local spin-switch and Hanle spin precession measurements. A significantly higher charge-spin conversion in NbSe2 is observed at a lower temperature, below the superconducting transition temperature Tc ~ 7 K of NbSe2. However, the charge-spin conversion signal could only be observed with a higher bias current above the superconducting critical current, limiting the observation of the signal only to the non-superconducting state of NbSe2. Systematic measurements provide the possible origins of the spin polarization to be predominantly due to the spin Hall effect or Rashba-Edelstein effect in NbSe2, considering different symmetry allowed charge-spin conversion processes.
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Submitted 17 May, 2022;
originally announced May 2022.
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Giant effective Zeeman splitting in a monolayer semiconductor realized by spin-selective strong light-matter coupling
Authors:
T. P. Lyons,
D. J. Gillard,
C. Leblanc,
J. Puebla,
D. D. Solnyshkov,
L. Klompmaker,
I. A. Akimov,
C. Louca,
P. Muduli,
A. Genco,
M. Bayer,
Y. Otani,
G. Malpuech,
A. I. Tartakovskii
Abstract:
Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional…
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Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional optical microcavity. We find robust spin-susceptibility of the 2DEG to simultaneously enhance and suppress trion-polariton formation in opposite photon helicities. This leads to observation of a giant effective valley Zeeman splitting for trion-polaritons (g-factor >20), exceeding the purely trionic splitting by over five times. Going further, we observe robust effective optical non-linearity arising from the highly non-linear behaviour of the valley-specific strong light-matter coupling regime, and allowing all-optical tuning of the polaritonic Zeeman splitting from 4 to >10 meV. Our experiments lay the groundwork for engineering quantum-Hall-like phases with true unidirectionality in monolayer semiconductors, accompanied by giant effective photonic non-linearities rooted in many-body exciton-electron correlations.
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Submitted 13 September, 2021;
originally announced September 2021.
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Local and nonlocal spin Seebeck effect in lateral Pt-$\mathrm{Cr_2O_3}$-Pt devices at low temperatures
Authors:
Prasanta Muduli,
Richard Schlitz,
Tobias Kosub,
René Hübner,
Artur Erbe,
Denys Makarov,
Sebastian T. B. Goennenwein
Abstract:
We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE sign…
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We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our $α$-$\mathrm{Cr_2O_3}$ films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.
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Submitted 11 February, 2021; v1 submitted 17 November, 2020;
originally announced November 2020.
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Skyrmion-antiskyrmion droplets in a chiral ferromagnet
Authors:
Naveen Sisodia,
Pranaba Kishor Muduli,
Nikos Papanicolaou,
Stavros Komineas
Abstract:
We find numerically skyrmionic textures with skyrmion number Q=0 in ferromagnets with the Dzyaloshinskii-Moriya interaction and perpendicular anisotropy. These have the form of a skyrmion-antiskyrmion pair and may be called chiral droplets. They are stable in an infinite film as well as in disc-shaped magnetic elements. Droplets are found for values of the parameters close to the transition from t…
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We find numerically skyrmionic textures with skyrmion number Q=0 in ferromagnets with the Dzyaloshinskii-Moriya interaction and perpendicular anisotropy. These have the form of a skyrmion-antiskyrmion pair and may be called chiral droplets. They are stable in an infinite film as well as in disc-shaped magnetic elements. Droplets are found for values of the parameters close to the transition from the ferromagnetic to the spiral phase. We study their motion under spin-transfer torque. They move in the direction of the spin flow and, thus, their dynamics are drastically different than the Hall dynamics of the standard Q=0 skyrmion.
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Submitted 2 September, 2020;
originally announced September 2020.
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Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the MoS$_{\rm 2}$/Ni$_{80}$Fe$_{20}$ interface
Authors:
Akash Kumar,
Avinash Kumar Chaurasiya,
Niru Chowdhury,
Amrit Kumar Mondal,
Rajni Bansal,
Arun Barvat,
Suraj P Khanna,
Prabir Pal,
Sujeet Chaudhary,
Anjan Barman,
P. K. Muduli
Abstract:
We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/T…
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We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures.
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Submitted 15 June, 2020; v1 submitted 14 April, 2020;
originally announced April 2020.
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Evaluation of spin diffusion length and spin Hall angle of antiferromagnetic Weyl semimetal Mn$_3$Sn
Authors:
P. K. Muduli,
T. Higo,
T. Nishikawa,
D. Qu,
H. Isshiki,
K. Kondou,
D. Nishio-Hamane,
S. Nakatsuji,
YoshiChika Otani
Abstract:
Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the Kagome planes. This prompts us to investigate intrinsic spin Hall effect, a transverse phenomenon with identical origin as the intrinsic AHE. We report inverse s…
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Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the Kagome planes. This prompts us to investigate intrinsic spin Hall effect, a transverse phenomenon with identical origin as the intrinsic AHE. We report inverse spin Hall effect experiments in nanocrystalline Mn$_3$Sn nanowires at room temperature using spin absorption method which enables us to quantitatively derive both the spin diffusion length and the spin Hall angle in the same device. We observed clear absorption of the spin current in the Mn$_3$Sn nanowires when kept in contact with the spin transport channel of a lateral spin-valve device. We estimate spin diffusion length $λ_{s(Mn_3Sn)}$ $\sim$0.75 $\pm$0.67 nm from the comparison of spin signal of an identical reference lateral spin valve without Mn$_3$Sn nanowire. From inverse spin Hall measurements, we evaluate spin Hall angle $θ_{SH}$ $\sim$5.3 $\pm$ 2.4 $\%$ and spin Hall conductivity $σ_{SH}$ $\sim$46.9 $\pm$ 3.4 ($\hbar/e$) ($Ω$ cm)$^{-1}$. The estimated spin Hall conductivity agrees with both in sign and magnitude to the theoretically predicted intrinsic $σ_{SH}^{int}$ $\sim$36-96 ($\hbar/e$) ($Ω$ cm)$^{-1}$. We also observed anomalous Hall effect at room temperature in nano-Hall bars prepared at the same time as the spin Hall devices. Large anomalous Hall conductivity along with adequate spin Hall conductivity makes Mn$_3$Sn a promising material for ultrafast and ultrahigh-density spintronics devices.
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Submitted 18 February, 2019;
originally announced February 2019.
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Direct Observation of Unusual Interfacial Dzyaloshinskii-Moriya Interaction in Graphene/NiFe/Ta Heterostructure
Authors:
Avinash Kumar Chaurasiya,
Akash Kumar,
Rahul Gupta,
Sujeet Chaudhary,
Pranaba Kishor Muduli,
Anjan Barman
Abstract:
Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni80Fe20/Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scatterin…
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Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni80Fe20/Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scattering (BLS) technique. Linear scaling of iDMI with the inverse of Ni80Fe20 thicknesses suggests primarily interfacial origin of iDMI. Both iDMI and spin-mixing conductance increase with the increase in defect density of graphene obtained by varying argon pressure during sputter deposition of Ni80Fe20. This suggests that the observed iDMI originates from defect-induced extrinsic spin-orbit coupling at the interface. The direct observation of iDMI at graphene/ferromagnet interface without perpendicular magnetic anisotropy opens new route in designing thin film heterostructures based on 2-D materials for controlling chiral spin structure such as skyrmions and bubbles, and magnetic domain-wall-based storage and memory devices.
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Submitted 31 January, 2019;
originally announced January 2019.
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Experimentally determined correlation between direct and inverse Edelstein effects at Bi2O3/Cu interface by means of spin absorption method using lateral spin valve structure
Authors:
Hironari Isshiki,
Prasanta Muduli,
Junyeon Kim,
Kouta Kondou,
YoshiChika Otani
Abstract:
We have experimentally elucidated the correlation between inverse and direct Edelstein Effects (EEs) at Bi2O3/Cu interface by means of spin absorption method using lateral spin valve structure. The conversion coefficient λ for the inverse EE is determined by the electron momentum scattering time in the interface, whereas the coefficient q for the direct EE is by the spin ejection time from the int…
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We have experimentally elucidated the correlation between inverse and direct Edelstein Effects (EEs) at Bi2O3/Cu interface by means of spin absorption method using lateral spin valve structure. The conversion coefficient λ for the inverse EE is determined by the electron momentum scattering time in the interface, whereas the coefficient q for the direct EE is by the spin ejection time from the interface. For the Bi2O3/Cu interface, the spin ejection time was estimated to be ~ 53 fs and the momentum scattering time ~ 13 fs at room temperature, both of which contribute to the total momentum relaxation time that defines the resistivity of the interface. The effective spin Hall angle for the Bi2O3/Cu interface amounts to ~ 10% which is comparable to commonly used spin Hall material such as platinum. Interesting to note is that the experimentally obtained Edelstein resistances given by the output voltage divided by the injection current for direct and inverse effects are the same. Analysis based on our phenomenological model reveals that the larger the momentum scattering time, the more efficient direct EE; and the smaller spin ejection time, the more efficient inverse EE.
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Submitted 10 January, 2019;
originally announced January 2019.
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Chiral skyrmion auto-oscillations in a ferromagnet under spin transfer torque
Authors:
Naveen Sisodia,
Stavros Komineas,
Pranaba Kishor Muduli
Abstract:
A skyrmion can be stabilized in a nanodisc geometry in a ferromagnetic material with Dzyaloshinskii-Moriya (DM) interaction. We apply spin torque uniform in space and time and observe numerically that the skyrmion is set in steady rotational motion around a point off the nanodisc center. We give a theoretical description of the emerging auto-oscillation dynamics based on the coupling of the rotati…
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A skyrmion can be stabilized in a nanodisc geometry in a ferromagnetic material with Dzyaloshinskii-Moriya (DM) interaction. We apply spin torque uniform in space and time and observe numerically that the skyrmion is set in steady rotational motion around a point off the nanodisc center. We give a theoretical description of the emerging auto-oscillation dynamics based on the coupling of the rotational motion to the breathing mode of the skyrmion and to the associated oscillations of the in-plane magnetization. The analysis shows that the achievement of auto-oscillations in this simple set-up is due to the chiral symmetry breaking. Thus, we argue that the system is turned into a spin-torque oscillator due to the chiral DM interaction.
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Submitted 4 August, 2018;
originally announced August 2018.
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Large spin current generation by the spin Hall effect in mixed crystalline phase Ta thin films
Authors:
Akash Kumar,
Rajni Bansal,
Sujeet Chaudhary,
P. K. Muduli
Abstract:
Manipulation of the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque requires high spin Hall conductivity of the heavy metal. We measure inverse spin Hall voltage using a co-planar wave-guide based broadband ferromagnetic resonance set-up in Py/Ta system with varying crystalline phase of Ta. We demonstrate a strong correlation between the measured spin mixing conductan…
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Manipulation of the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque requires high spin Hall conductivity of the heavy metal. We measure inverse spin Hall voltage using a co-planar wave-guide based broadband ferromagnetic resonance set-up in Py/Ta system with varying crystalline phase of Ta. We demonstrate a strong correlation between the measured spin mixing conductance and spin Hall conductivity with the crystalline phase of Ta thin films. We found a large spin Hall conductivity of $-2439~(\hbar/e)~Ω^{-1}$cm$^{-1}$ for low-resistivity (68 $μΩ-$cm) Ta film having mixed crystalline phase, which we attribute to an extrinsic mechanism of the spin Hall effect.
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Submitted 3 July, 2018;
originally announced July 2018.
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Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents
Authors:
P. K. Muduli,
M. Kimata,
Y. Omori,
T. Wakamura,
Saroj P. Dash,
YoshiChika Otani
Abstract:
At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation pro…
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At the interface between a nonmagnetic metal (NM) and a ferromagnetic insulator (FI) spin current can interact with the magnetization, leading to a modulation of the spin current. The interfacial exchange field at these FI-NM interfaces can be probed by placing the interface in contact with the spin transport channel of a lateral spin valve (LSV) device and observing additional spin relaxation processes. We study interfacial exchange field in lateral spin valve devices where Cu spin transport channel is in proximity with ferromagnetic insulator EuS (EuS-LSV) and yttrium iron garnet Y$_3$Fe$_5$O$_{12}$ (YIG-LSV). The spin signals were compared with reference lateral spin valve devices fabricated on nonmagnetic Si/SiO$_2$ substrate with MgO or AlO$_x$ cap**. The nonlocal spin valve signal is about 4 and 6 times lower in the EuS-LSV and YIG-LSV, respectively. The suppression in the spin signal has been attributed to enhanced surface spin-flip probability at the Cu-EuS (or Cu-YIG) interface due to interfacial spin-orbit field. Besides spin signal suppression we also found widely observed low temperature peak in the spin signal at $T \sim$30 K is shifted to higher temperature in the case of devices in contact with EuS or YIG. Temperature dependence of spin signal for different injector-detector distances reveal fluctuating exchange field at these interfaces cause additional spin decoherence which limit spin relaxation time in addition to conventional sources of spin relaxation. Our results show that temperature dependent measurement with pure spin current can be used to probe interfacial exchange field at the ferromagnetic insulator-nonmagnetic metal interface.
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Submitted 26 June, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.
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Time-domain stability of parametric synchronization in a spin-torque nano-oscillator based on a magnetic tunnel junction
Authors:
Raghav Sharma,
Naveen Sisodia,
Philipp Dürrenfeld,
Johan Åkerman,
P. K. Muduli
Abstract:
We report on a time-domain study of parametric synchronization in a magnetic tunnel junction based spin torque nano-oscillator (STNO). Time-domain measurements of the instantaneous frequency ($f_{i}$) of a parametrically synchronized STNO show random short-term unlocking of the STNO signal for low injected radio-frequency (RF) power, which cannot be revealed in time-averaged frequency domain measu…
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We report on a time-domain study of parametric synchronization in a magnetic tunnel junction based spin torque nano-oscillator (STNO). Time-domain measurements of the instantaneous frequency ($f_{i}$) of a parametrically synchronized STNO show random short-term unlocking of the STNO signal for low injected radio-frequency (RF) power, which cannot be revealed in time-averaged frequency domain measurements. Macrospin simulations reproduce the experimental results and reveal that the random unlocking during synchronization is driven by thermal fluctuations. We show that by using a high injected RF power, random unlocking of the STNO can be avoided. However, a perfect synchronization characterized by complete suppression of phase noise, so-called phase noise squeezing, can be obtained only at a significantly higher RF power. Our macrospin simulations suggest that a lower temperature and a higher positive ratio of the field-like torque to the spin transfer torque reduce the threshold RF power required for phase noise squeezing under parametric synchronization.
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Submitted 1 August, 2017; v1 submitted 21 June, 2017;
originally announced June 2017.
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Spin-polarized quasiparticle control in a double spin-filter tunnel junction
Authors:
P. K. Muduli
Abstract:
Spin-polarized quasiparticles can be easily created during spin-filtering through a ferromagnetic insulator (FI) in contact with a superconductor due to pair breaking effects at the interface. A combination FI-N-FI sandwiched between two superconductors can be used to create and analyze such spin-polarized quasiparticles through their nonequilibrium accumulation in the middle metallic (N) layer. W…
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Spin-polarized quasiparticles can be easily created during spin-filtering through a ferromagnetic insulator (FI) in contact with a superconductor due to pair breaking effects at the interface. A combination FI-N-FI sandwiched between two superconductors can be used to create and analyze such spin-polarized quasiparticles through their nonequilibrium accumulation in the middle metallic (N) layer. We report spin-polarized quasiparticle regulation in a double spin-filter tunnel junction in the configuration NbN-GdN1-Ti-GdN2-NbN. The middle Ti layer provides magnetic decoupling between two ferromagnetic GdN and a place for nonequilibrium quasiparticle accumulation. The two GdN(1,2) layers were deposited under different conditions to introduce coercive contrast. The quasiparticle tunneling spectra has been measured at different temperatures to understand the tunneling mechanism in these double spin-filter junctions. The conductance spectra were found to be comparable to an asymmetric SINI'S-type tunnel junction. A hysteretic R-H loop with higher resistance for the antiparallel configuration compared to parallel state was observed asserting the spin-polarized nature of quasiparticles. The hysteresis in the R-H loop was found to disappear for sub-gap bias current. This difference can be understood by considering suppression of the interlayer coupling due to nonequilibrium spin-polarized quasiparticle accumulation in the Ti layer.
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Submitted 20 November, 2016;
originally announced November 2016.
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Spin-polarized quasiparticle tunneling in spin-filter pseudospin-valve devices
Authors:
P. K. Muduli
Abstract:
Spin selective nature of spin-filter tunnel junctions can be integrated with conventional metallic ferromagnets to regulate spin polarized quasiparticles in superconducting devices. We report fabrication of pseudo spin-valve device made with a bilayer of nitride spin-filter tunnel barrier (DyN or GdN) and a transition metal ferromagnet (Co and Gd). We show resistance switching in these devices cor…
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Spin selective nature of spin-filter tunnel junctions can be integrated with conventional metallic ferromagnets to regulate spin polarized quasiparticles in superconducting devices. We report fabrication of pseudo spin-valve device made with a bilayer of nitride spin-filter tunnel barrier (DyN or GdN) and a transition metal ferromagnet (Co and Gd). We show resistance switching in these devices corresponding to parallel and antiparallel configuration of their mutual magnetization direction. With optimal deposition process partial nitridation of the Co layer can be achieved. The magnetically dead native CoN$_x$ layer at the Co-DyN interface acts the role of the barrier in these devices. In pseudo spin-valve with Co, lower resistance was found for antiparallel state compared to parallel configuration. Reverse resistance switching behavior was observed for the pseudo spin-valves with Gd. Presence of resistance switching in these devices further confirm the spin-filtering nature of DyN and GdN tunnel barrier. Quasiparticle transport at different temperatures in these devices was found to be compatible with conventional N-I-S tunnelling model. These devices can be further engineered to regulate spin polarized supercurrent in superconducting spintronics devices.
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Submitted 31 August, 2016;
originally announced August 2016.
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Spin-Torque and Spin-Hall Nano-Oscillators
Authors:
Tingsu Chen,
Randy K. Dumas,
Anders Eklund,
Pranaba K. Muduli,
Afhin Houshang,
Ahmad A. Awad,
Philipp Dürrenfeld,
B. Gunnar Malm,
Ana Rusu,
Johan Åkerman
Abstract:
This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the…
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This paper reviews the state of the art in spin-torque and spin Hall effect driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the potential for these oscillators in a wide range of applications, from microwave signal sources and detectors to neuromorphic computation elements, is discussed together with the specific electronic circuitry that has so far been designed to harness this potential.
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Submitted 10 December, 2015;
originally announced December 2015.
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Magnetic field-enhanced spin filtering in rare-earth mononitride tunnel junctions
Authors:
P. K. Muduli,
X. L. Wang,
J. H. Zhao,
Mark G. Blamire
Abstract:
Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by adjusting exchange strength of the tunnel barrier. We have observed that magnetic field and bias voltage (current) can be used to regulate exchange strength and consequ…
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Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by adjusting exchange strength of the tunnel barrier. We have observed that magnetic field and bias voltage (current) can be used to regulate exchange strength and consequently spin-filter efficiency in tunnel junctions with ferromagnetic DyN and GdN tunnel barrier. In tunnel junctions with DyN barrier we obtained $\sim$37$\%$ spin polarization of tunneling electrons at 11 K due to a small exchange splitting ($ E_{ex}$) $\approx$5.6 meV of the barrier height ($Φ_0$) $\approx$60 meV. Huge spin-filter efficiency $\sim$97$\%$ was found for tunnel junctions with GdN barrier due to larger $E_{ex}$ $\approx$47 meV. In the presence of an applied magnetic field, barrier height can further split due to magnetic field dependent exchange splitting $ E_{ex}(H)$. The spin filter efficiency in DyN tunnel junctions can be increased up to $\sim$87$\%$ with magnetic field. Electric and magnetic field tuned spin-filter efficiency of these tunnel junctions gives opportunity for practical application of these devices with additional functionality.
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Submitted 20 July, 2015; v1 submitted 24 October, 2014;
originally announced October 2014.
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Generation linewidth of mode-hop** spin torque oscillators
Authors:
Ezio Iacocca,
Olle Heinonen,
P. K. Muduli,
Johan Åkerman
Abstract:
Experiments on spin torque oscillators commonly observe multi-mode signals. Recent theoretical works have ascribed the multi-mode signal generation to coupling between energy-separated spin wave modes. Here, we analyze in detail the dynamics generated by such mode coupling. We show analytically that the mode-hop** dynamics broaden the generation linewidth and makes it generally well described by…
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Experiments on spin torque oscillators commonly observe multi-mode signals. Recent theoretical works have ascribed the multi-mode signal generation to coupling between energy-separated spin wave modes. Here, we analyze in detail the dynamics generated by such mode coupling. We show analytically that the mode-hop** dynamics broaden the generation linewidth and makes it generally well described by a Voigt lineshape. Furthermore, we show that the mode-hop** contribution to the linewidth can dominate in which case it provides a direct measure of the mode-hop** rate. Due to the thermal drive of mode-hop** events, the mode-hop** rate also provides information on the energy barrier separating modes and temperature-dependent linewidth broadening. Our results are in good agreement with experiments, revealing the physical mechanism behind the linewidth broadening in multi-mode spin torque oscillators.
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Submitted 29 November, 2013;
originally announced November 2013.
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Low-field microwave absorption in epitaxial La-Sr-Mn-O films resulting from the angle-tuned ferromagnetic resonance in the multidomain state
Authors:
M. Golosovsky,
P. Monod,
P. K. Muduli,
R. C. Budhani
Abstract:
We studied magnetic-field induced microwave absorption in 100-200 nm thick La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films on SrTiO$_{3}$ substrate and found a low-field absorption with a very peculiar angular dependence: it appears only in the oblique field and is absent both in the parallel and in the perpendicular orientations. We demonstrate that this low-field absorption results from the ferromagnetic re…
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We studied magnetic-field induced microwave absorption in 100-200 nm thick La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films on SrTiO$_{3}$ substrate and found a low-field absorption with a very peculiar angular dependence: it appears only in the oblique field and is absent both in the parallel and in the perpendicular orientations. We demonstrate that this low-field absorption results from the ferromagnetic resonance in the multidomain state (domain-mode resonance). Its unusual angular dependence arises from the interplay between the parallel component of the magnetic field that drives the film into multidomain state and the perpendicular field component that controls the domain width through its effect on domain wall energy. The low-field microwave absorption in the multidomain state can be a tool to probe domain structure in magnetic films with in-plane magnetization.
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Submitted 14 June, 2012;
originally announced June 2012.
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Decoherence and mode-hop** in a magnetic tunnel junction-based spin-torque oscillator
Authors:
P. K. Muduli,
O. G. Heinonen,
J. Åkerman
Abstract:
We discuss the coherence of magnetic oscillations in a magnetic tunnel junction-based spin-torque oscillator as a function of external field angle. Time-frequency analysis shows mode-hop** between distinct oscillator modes, which arises from linear and nonlinear couplings in the Landau-Lifshitz-Gilbert equation, analogous to mode-hop** observed in semiconductor ring lasers. These couplings and…
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We discuss the coherence of magnetic oscillations in a magnetic tunnel junction-based spin-torque oscillator as a function of external field angle. Time-frequency analysis shows mode-hop** between distinct oscillator modes, which arises from linear and nonlinear couplings in the Landau-Lifshitz-Gilbert equation, analogous to mode-hop** observed in semiconductor ring lasers. These couplings and therefore mode-hop** are minimized near the current threshold for antiparallel (AP) alignment of free layer with reference layer magnetization. Away from the AP alignment, mode-hop** limits oscillator coherence.
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Submitted 28 March, 2012;
originally announced March 2012.
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Temperature dependence of linewidth in nano-contact based spin torque oscillators: effect of multiple oscillatory modes
Authors:
P. K. Muduli,
O. G. Heinonen,
Johan Åkerman
Abstract:
We discuss the effect of mode transitions on the current (I) and temperature (T) dependent linewidth (Δf) in nanocontact based spin torque oscillators (STOs). At constant I, Δf exhibits an anomalous temperature dependence near the mode transitions; Δf may either increase or decrease with T depending on the position w.r.t. the mode transition. We show that the behavior of Δf as a function of I can…
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We discuss the effect of mode transitions on the current (I) and temperature (T) dependent linewidth (Δf) in nanocontact based spin torque oscillators (STOs). At constant I, Δf exhibits an anomalous temperature dependence near the mode transitions; Δf may either increase or decrease with T depending on the position w.r.t. the mode transition. We show that the behavior of Δf as a function of I can be fitted by the single mode analytical theory of STOs, even though there are two modes present near the mode transition, if the nonlinear amplification is determined directly from the experiment. Using a recently developed theory of two coupled modes, we show that the linewidth near mode transition can be described by an "effective" single-oscillator theory with an enhanced nonlinear amplification that carries additional temperature dependence, which thus qualitatively explain the experimental results.
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Submitted 11 November, 2012; v1 submitted 6 December, 2011;
originally announced December 2011.
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Large local Hall effect in pin-hole dominated multigraphene spin-valves
Authors:
P. K. Muduli,
J. Barzola-Quiquia,
S. Dusari,
Ana Ballestar,
F. Bern,
W. Bohlmann,
P. Esquinazi
Abstract:
We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field swee** similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect due to thickness irregularity of the tunnel…
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We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field swee** similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect due to thickness irregularity of the tunnel barrier. Local Hall effect appears due to large local magnetostatic field produced at the roughness in the AlO$_x$ tunnel barrier. The effect of this local Hall effect is found to reduce as temperature is increased above 75 K. The strong local Hall effect hinders spin-injection into multigraphene resulting in no spin signal in non-local measurements.
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Submitted 23 July, 2012; v1 submitted 10 November, 2011;
originally announced November 2011.
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Spin-torque oscillator linewidth narrowing under current modulation
Authors:
Ye. Pogoryelov,
P. K. Muduli,
S. Bonetti,
Fred Mancoff,
Johan Åkerman
Abstract:
We study the behavior of the linewidth of a nano-contact based spin torque oscillator (STO) under application of a radio frequency (100 MHz) modulating current. We achieve a significant (up to 85%) reduction of the STO linewidth when it is modulated across a region of high nonlinearity. The mechanism responsible for the linewidth reduction is the nonlinear frequency shift under the influence of cu…
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We study the behavior of the linewidth of a nano-contact based spin torque oscillator (STO) under application of a radio frequency (100 MHz) modulating current. We achieve a significant (up to 85%) reduction of the STO linewidth when it is modulated across a region of high nonlinearity. The mechanism responsible for the linewidth reduction is the nonlinear frequency shift under the influence of current modulation, which reduces the nonlinear amplification of the linewidth. The reduction of the linewidth during modulation can be quantitatively calculated from the free-running behavior of the STO.
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Submitted 15 April, 2011;
originally announced April 2011.
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Bias dependence of perpendicular spin torque and of free and fixed layer eigenmodes in MgO-based nanopillars
Authors:
P. K. Muduli,
O. G. Heinonen,
Johan Åkerman
Abstract:
We have measured the bias voltage and field dependence of eigenmode frequencies in a magnetic tunnel junction with MgO barrier. We show that both free layer (FL) and reference layer (RL) modes are excited, and that a cross-over between these modes is observed by varying external field and bias voltage. The bias voltage dependence of the FL and RL modes are shown to be dramatically different. The b…
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We have measured the bias voltage and field dependence of eigenmode frequencies in a magnetic tunnel junction with MgO barrier. We show that both free layer (FL) and reference layer (RL) modes are excited, and that a cross-over between these modes is observed by varying external field and bias voltage. The bias voltage dependence of the FL and RL modes are shown to be dramatically different. The bias dependence of the FL modes is linear in bias voltage, whereas that of the RL mode is strongly quadratic. Using modeling and micromagnetic simulations, we show that the linear bias dependence of FL frequencies is primarily due to a linear dependence of the perpendicular spin torque on bias voltage, whereas the quadratic dependence of the RL on bias voltage is dominated by the reduction of exchange bias due to Joule heating, and is not attributable to a quadratic dependence of the perpendicular spin torque on bias voltage.
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Submitted 18 May, 2011; v1 submitted 12 January, 2011;
originally announced January 2011.
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Frequency modulation of spin torque oscillator pairs
Authors:
Ye. Pogoryelov,
P. K. Muduli,
S. Bonetti,
E. Iacocca,
Fred Mancoff,
Johan Åkerman
Abstract:
The current controlled modulation of nano-contact based spin torque oscillator (STO) pairs is studied in both the synchronized and non-synchronized states. The synchronized state shows a well behaved modulation and demonstrates robust mutual locking even under strong modulation. The power distribution of the modulation sidebands can be quantitatively described by assuming a single oscillator model…
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The current controlled modulation of nano-contact based spin torque oscillator (STO) pairs is studied in both the synchronized and non-synchronized states. The synchronized state shows a well behaved modulation and demonstrates robust mutual locking even under strong modulation. The power distribution of the modulation sidebands can be quantitatively described by assuming a single oscillator model. However, in the non-synchronized state, the modulation sidebands are not well described by the model, indicating interactions between the two individual nano-contact STOs. These findings are promising for potential applications requiring the modulation of large synchronized STO arrays.
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Submitted 6 May, 2011; v1 submitted 14 July, 2010;
originally announced July 2010.
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Non-linear frequency and amplitude modulation of a nano-contact spin torque oscillator
Authors:
P. K. Muduli,
Ye. Pogoryelov,
S. Bonetti,
G. Consolo,
Fred Mancoff,
Johan Åkerman
Abstract:
We study the current controlled modulation of a nano-contact spin torque oscillator. Three principally different cases of frequency non-linearity ($d^{2}f/dI^{2}_{dc}$ being zero, positive, and negative) are investigated. Standard non-linear frequency modulation theory is able to accurately describe the frequency shifts during modulation. However, the power of the modulated sidebands only agrees w…
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We study the current controlled modulation of a nano-contact spin torque oscillator. Three principally different cases of frequency non-linearity ($d^{2}f/dI^{2}_{dc}$ being zero, positive, and negative) are investigated. Standard non-linear frequency modulation theory is able to accurately describe the frequency shifts during modulation. However, the power of the modulated sidebands only agrees with calculations based on a recent theory of combined non-linear frequency and amplitude modulation.
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Submitted 11 May, 2010; v1 submitted 15 October, 2009;
originally announced October 2009.
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Experimental evidence of self-localized and propagating spin wave modes in obliquely magnetized current-driven nanocontacts
Authors:
Stefano Bonetti,
Vasyl S. Tiberkevich,
Giancarlo Consolo,
Giovanni Finocchio,
Pranaba Muduli,
Fred Mancoff,
Andrei N. Slavin,
Johan Åkerman
Abstract:
Through detailed experimental studies of the angular dependence of spin wave excitations in nanocontact-based spin-torque oscillators, we demonstrate that two distinct spin wave modes can be excited, with different frequency, threshold currents and frequency tuneability. Using analytical theory and micromagnetic simulations we identify one mode as an exchange-dominated propagating spin wave, and t…
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Through detailed experimental studies of the angular dependence of spin wave excitations in nanocontact-based spin-torque oscillators, we demonstrate that two distinct spin wave modes can be excited, with different frequency, threshold currents and frequency tuneability. Using analytical theory and micromagnetic simulations we identify one mode as an exchange-dominated propagating spin wave, and the other as a self-localized nonlinear spin wave bullet. Wavelet-based analysis of the simulations indicates that the apparent simultaneous excitation of both modes results from rapid mode hop** induced by the Oersted field.
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Submitted 28 May, 2010; v1 submitted 17 September, 2009;
originally announced September 2009.
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Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity
Authors:
P. K. Muduli,
Gyanendra Singh,
R. Sharma,
R. C. Budhani
Abstract:
Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular manganite. Different degrees of granularity is achieved by using the deposition temperature (T$_{D}$) of 700 and 800 $^{0}$C. Although no significant change in…
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Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular manganite. Different degrees of granularity is achieved by using the deposition temperature (T$_{D}$) of 700 and 800 $^{0}$C. Although no significant change in magnetic order temperature (T$_C$) and saturation magnetization is seen for these two types of films, the temperature and magnetic field dependence of their resistivity ($ρ$(T, H)) is strikingly dissimilar. While the $ρ$(T,H) of the 800 $^{0}$C film is comparable to that of epitaxial samples, the lower growth temperature leads to a material which undergoes insulator-to-metal transition at a temperature (T$_{P}$ $\approx$ 170 K) much lower than T$_C$. At T $\ll$ T$_P$, the resistivity is characterized by a minimum followed by ln $\emph{T}$ divergence at still lower temperatures. The high negative magnetoresistance ($\approx$ 20$%$) and ln $\emph{T}$ dependence below the minimum are explained on the basis of Kondo-type scattering from blocked Mn-spins in the intergranular material. Further, a striking feature of the T$_D$ = 700 $^{0}$C film is its two orders of magnitude larger anisotropic magnetoresistance (AMR) as compared to the AMR of epitaxial films. We attribute it to unquenching of the orbital angular momentum of 3d electrons of Mn ions in the intergranular region where crystal field is poorly defined.
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Submitted 8 May, 2009;
originally announced May 2009.
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Tailoring exchange bias in half-metallic La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films for spin-valve applications
Authors:
P. K. Muduli,
R. C. Budhani
Abstract:
We have utilized the antiferromagnetic nature and structural/chemical compatibility of La$_{0.45}$Sr$_{0.55}$MnO$_{3}$ with highly spin polarized La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ to prepare epitaxial exchange bias couples. A robust exchange bias (EB) shift of magnetization hysteresis with associated interfacial exchange energy J $\approx$ 0.13 erg/cm$^2$ at 10 K along with enhanced coercivity are…
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We have utilized the antiferromagnetic nature and structural/chemical compatibility of La$_{0.45}$Sr$_{0.55}$MnO$_{3}$ with highly spin polarized La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ to prepare epitaxial exchange bias couples. A robust exchange bias (EB) shift of magnetization hysteresis with associated interfacial exchange energy J $\approx$ 0.13 erg/cm$^2$ at 10 K along with enhanced coercivity are reported. The EB effect was engineered to bring coercivity contrast between
La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and cobalt films in La$_{0.45}$Sr$_{0.55}$MnO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/SrTiO$_{3}$/Co magnetic tunnel junctions.
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Submitted 27 April, 2009;
originally announced April 2009.
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Spin wave resonances in La_{0.7}Sr_{0.3}MnO_{3} films: measurement of spin wave stiffness and anisotropy field
Authors:
M. Golosovsky,
P. Monod,
P. K. Muduli,
R. C. Budhani
Abstract:
We studied magnetic field dependent microwave absorption in epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films using an X-band Bruker ESR spectrometer. By analyzing angular and temperature dependence of the ferromagnetic and spin-wave resonances we determine spin-wave stiffness and anisotropy field. The spin-wave stiffness as found from the spectrum of the standing spin-wave resonances in thin films…
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We studied magnetic field dependent microwave absorption in epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films using an X-band Bruker ESR spectrometer. By analyzing angular and temperature dependence of the ferromagnetic and spin-wave resonances we determine spin-wave stiffness and anisotropy field. The spin-wave stiffness as found from the spectrum of the standing spin-wave resonances in thin films is in fair agreement with the results of inelastic neutron scattering studies on a single crystal of the same composition [Vasiliu-Doloc et al., J. Appl. Phys. \textbf{83}, 7343 (1998)].
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Submitted 23 September, 2007; v1 submitted 20 September, 2007;
originally announced September 2007.
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Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance
Authors:
M. Golosovsky,
P. Monod,
P. K. Muduli,
R. C. Budhani,
L. Mechin,
P. Perna
Abstract:
We study magnetic-field-dependent nonresonant microwave absorption and dispersion in thin La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films and show that it originates from the colossal magnetoresistance. We develop the model for magnetoresistance of a thin ferromagnetic film in oblique magnetic field. The model accounts fairly well for our experimental findings, as well as for results of other researchers. W…
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We study magnetic-field-dependent nonresonant microwave absorption and dispersion in thin La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films and show that it originates from the colossal magnetoresistance. We develop the model for magnetoresistance of a thin ferromagnetic film in oblique magnetic field. The model accounts fairly well for our experimental findings, as well as for results of other researchers. We demonstrate that nonresonant microwave absorption is a powerful technique that allows contactless measurement of magnetic properties of thin films, including magnetoresistance, anisotropy field and coercive field.
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Submitted 2 September, 2007;
originally announced September 2007.
